JP3194185B2 - Electromagnetic wave shield molded product - Google Patents

Electromagnetic wave shield molded product

Info

Publication number
JP3194185B2
JP3194185B2 JP27917097A JP27917097A JP3194185B2 JP 3194185 B2 JP3194185 B2 JP 3194185B2 JP 27917097 A JP27917097 A JP 27917097A JP 27917097 A JP27917097 A JP 27917097A JP 3194185 B2 JP3194185 B2 JP 3194185B2
Authority
JP
Japan
Prior art keywords
molded product
metal
electromagnetic wave
wave shield
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP27917097A
Other languages
Japanese (ja)
Other versions
JPH11121961A (en
Inventor
雅夫 柳原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ETSUMIOPTICAL CO.,LTD.
Original Assignee
ETSUMIOPTICAL CO.,LTD.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ETSUMIOPTICAL CO.,LTD. filed Critical ETSUMIOPTICAL CO.,LTD.
Priority to JP27917097A priority Critical patent/JP3194185B2/en
Publication of JPH11121961A publication Critical patent/JPH11121961A/en
Application granted granted Critical
Publication of JP3194185B2 publication Critical patent/JP3194185B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電磁波シールド成
形品に関する。ここで、電磁波シールドとは、電子機器
が、妨害電波を発生して周囲の機器に悪影響を及ぼすこ
とのないように、また、外部からの妨害電波に対して機
器が誤動作しないように電磁波を遮断することをいう
(斉藤省吾外3名編「電気・電子工学大百科事典第6
巻」(1983−10月)株式会社電気書院、p225-226参
照)。
[0001] The present invention relates to an electromagnetic wave shield molded product. Here, the electromagnetic wave shield is used to block electromagnetic waves so that electronic devices do not generate jamming radio waves and adversely affect surrounding devices, and do not malfunction the devices against external jamming radio waves. (Shogo Saito, 3 members, "Electrical and Electrical Engineering Encyclopedia No. 6
Vol. (1983-Oct.) Denki Shoin Co., Ltd., p. 225-226).

【0002】[0002]

【背景技術】昨今、携帯電話、ゲームウォッチ等の携帯
電子機器を一般人が持ち歩くようになってきている。こ
のため、病院の診断機器や交通機関の制御機器、さらに
は、心臓ペースメーカ等に内蔵されている電子機器が電
磁波障害(electro-magneticinterference;EMI)が社会
的問題になってきている。
2. Description of the Related Art In recent years, ordinary people have been carrying portable electronic devices such as mobile phones and game watches. For this reason, electromagnetic interference (EMI) has become a social problem for diagnostic equipment in hospitals, control equipment for transportation, and electronic equipment built in cardiac pacemakers and the like.

【0003】しかし、従来、上記のような携帯電子機器
は、軽量化の見地からプラスチック製ハウジング(プラ
スチック成形品)に納められて製品化されている。この
ため、本来的には、電磁波のシールド効果(shielding
effect: SE) はほとんどない。
However, conventionally, such portable electronic devices have been commercialized in a plastic housing (plastic molded product) from the viewpoint of weight reduction. For this reason, originally, the shielding effect of electromagnetic waves (shielding
effect: SE).

【0004】このため、電磁波シールドをプラスチック
ハウジングに行なう方式としては、導電性プラスチック
成形材料でハウジングを成形する方法、ハウジングの表
面または裏面にアルミニウム蒸着等により導電性処理を
する方法等が考えられる(同p226参照)。
[0004] For this reason, as a method of applying the electromagnetic wave shielding to the plastic housing, a method of molding the housing with a conductive plastic molding material, a method of conducting a conductive treatment on the front or back surface of the housing by aluminum vapor deposition or the like are considered ( P.226).

【0005】[0005]

【発明が解決しようとする課題】しかし、上記アルミニ
ウム蒸着単独では、MFからUHFの広い電磁波領域で
の電磁波シールド効果が十分ではないことが分かった。
However, it has been found that the above-described aluminum deposition alone does not provide an adequate electromagnetic wave shielding effect in a wide electromagnetic wave region from MF to UHF.

【0006】本発明は、上記にかんがみて、広い周波数
領域での効率的な電磁波シールドが可能な電磁波シール
ド成形品を提供することを目的とする。
[0006] In view of the above, an object of the present invention is to provide an electromagnetic shielding product capable of efficiently shielding electromagnetic waves in a wide frequency range.

【0007】[0007]

【課題を解決するための手段】 本発明に係る電磁波シ
ールド成形品は、上記課題を、プラスチック成形品の表
面側又は内側に、電磁波シールド能を有する複層構成の
金属蒸着膜が形成されている構成により解決するもので
ある
Means for Solving the Problems The electromagnetic wave shield molded product according to the present invention solves the above-mentioned problem by forming a multi-layered metal vapor-deposited film having electromagnetic wave shielding ability on the surface side or inside the plastic molded product. This is solved by the configuration .

【0008】[0008]

【0009】[0009]

【0010】 更には、該金属蒸着膜の表面側に金属酸
化物蒸着膜が形成されており、前記金属酸化物蒸着膜が
酸化けい素であることが望ましい。
Further, a metal oxide deposited film is formed on a surface side of the metal deposited film, and the metal oxide deposited film is
Desirably, it is silicon oxide .

【0011】[0011]

【発明の実施の形態】次に、本発明の一実施形態を、図
例に基づいて詳細に説明をする。
Next, an embodiment of the present invention will be described in detail with reference to the drawings.

【0012】(1) 上位概念的にはプラスチック製の成形
品本体12の表面側または内側に、電磁波シールド能を
有する金属蒸着膜14a,14b,14cが形成されて
いる。図例では、該金属蒸着膜14の表面側に金属酸化
物蒸着膜16が形成されている。
(1) As a general concept, metal-deposited films 14a, 14b and 14c having electromagnetic wave shielding performance are formed on the surface side or inside of a molded article body 12 made of plastic. In the illustrated example, a metal oxide deposited film 16 is formed on the surface side of the metal deposited film 14.

【0013】ここで、金属蒸着膜14a,14b,14
cは、シールド作用を奏し、金属酸化物蒸着膜16は、
最外層の金属蒸着膜14cの絶縁及び表面保護(酸化防
止と耐擦傷性・摩耗性の付与)のために形成する。金属
蒸着膜の構成によっては、また、成形品の使用環境によ
っては、必然的ではない。
Here, the metal deposition films 14a, 14b, 14
c has a shielding effect, and the metal oxide deposited film 16 has
It is formed to insulate and protect the surface of the outermost metal vapor-deposited film 14c (to prevent oxidation and impart abrasion resistance and abrasion resistance). This is not indispensable depending on the configuration of the metal deposition film and depending on the use environment of the molded product.

【0014】例えば、Al最上層の場合、Alの酸化保
護膜(Al23 )が形成され、実質的に金属酸化物層
が形成されるため、必然的ではない。
For example, in the case of the uppermost layer of Al, it is not inevitable because an Al oxidation protection film (Al 2 O 3 ) is formed and a metal oxide layer is substantially formed.

【0015】また、金属蒸着膜が表面に酸化保護膜が形
成されなくても、手等が接触せず耐摩耗性が要求されな
いような部位は、そのまま使用できる。
Even if the metallized film does not have an oxidation protective film formed on its surface, a part that does not come into contact with a hand or the like and does not require abrasion resistance can be used as it is.

【0016】更には、金属蒸着膜及び金属酸化物蒸着膜
のいずれが最上層であっても、表面を樹脂系塗料等で彩
色して、意匠性を高めることも勿論できる。
Further, regardless of which of the metal deposited film and the metal oxide deposited film is the uppermost layer, it is of course possible to enhance the design by coloring the surface with a resin paint or the like.

【0017】(2) ここで、成形品本体12を構成するプ
ラスチック材料としては、ABS樹脂、AS樹脂、ポリ
カーボネート、ポリメチルメタクリレート、ポリメチル
アクリレート、ポリ塩化ビニル、ポリアミド、ポリアセ
タール、ポリフェニレンオキサイド等の極性樹脂を好ま
しく使用できる。極性を有する金属蒸着膜との密着性の
見地からである。金属蒸着膜の形成に先立ち、プライマ
ー塗布をすれば、ポリプロピレン、ポリエチレン等の非
極性樹脂であってもよい。
(2) Here, the plastic material constituting the molded article main body 12 includes ABS resin, AS resin, polycarbonate, polymethyl methacrylate, polymethyl acrylate, polyvinyl chloride, polyamide, polyacetal, and polyphenylene oxide. Resins can be preferably used. This is from the viewpoint of adhesion to a metal deposition film having polarity. If a primer is applied before the formation of the metal deposition film, a non-polar resin such as polypropylene or polyethylene may be used.

【0018】上記成形品本体としては、携帯電話、ポケ
ットベル、携帯パソコン、ゲームウォッチ等のハウジン
グや、機密保持用窓ガラス等を挙げることができる。
Examples of the molded product body include housings for mobile phones, pagers, mobile personal computers, game watches, etc., and confidential window glasses.

【0019】(3) ここで、金属蒸着膜14a,14b,
14cは、比抵抗(20℃)が20μΩ・cm以下でか
つ比抵抗が相互に1.5倍以上異なる金属の蒸着膜組み
合わせである複層構造が望ましい。20μΩ・cmを越
えると、シールド効率(SE)が低いためである。ま
た、金属蒸着膜として、2種以上の比抵抗が相互に1.
5倍以上(望ましくは2倍以上)異なる金属の組み合わ
せである複層構造とするのは、理由は断定できないが、
電波の吸収特性が異なるためである。
(3) Here, the metal deposition films 14a, 14b,
14c is desirably a multilayer structure in which a combination of metal deposited films having a specific resistance (20 ° C.) of 20 μΩ · cm or less and a specific resistance different from each other by 1.5 times or more. This is because if it exceeds 20 μΩ · cm, the shielding efficiency (SE) is low. Further, as a metal deposited film, two or more types of specific resistances are 1.
The reason why the multi-layer structure, which is a combination of metals that are five times or more (preferably two times or more) different from each other, cannot be determined for certain reasons.
This is because the radio wave absorption characteristics are different.

【0020】なお、図例では、金属蒸着膜14a,14
b,14cは、3層構成であるが、要求シールド能に応
じて、2層構成、更には4〜6層構成等であってもよ
い。構成層の数を多くすれば、より広い領域での電磁波
吸収特性が得易くなる。
In the illustrated example, the metal deposition films 14a, 14a
Although b and 14c have a three-layer configuration, they may have a two-layer configuration, or even a four to six-layer configuration, depending on the required shielding performance. Increasing the number of constituent layers makes it easier to obtain electromagnetic wave absorption characteristics in a wider area.

【0021】 具体的には、金属蒸着膜の形成金属とし
て、第周期5〜11族の元素およびアルミニウムの内
から選択することが、蒸着のし易さ(密着性も含めて)
等の見地から望ましいが、下記例示の金属等でも勿論使
用可能であり、更には、20μΩ・cmを越えても、組
み合わせる他の金属として20μΩ・cm以下のものを
使用すれば、Ti(55μΩ・cm)でも使用可能であ
る。
[0021] Specifically, it is easy to perform deposition (including adhesion) by selecting from among elements belonging to the fourth period of Groups 5 to 11 and aluminum as the metal for forming the metal deposition film.
Although it is desirable from the point of view such as the following, the metals exemplified below can of course be used, and even if it exceeds 20 μΩ · cm, if another metal combined with 20 μΩ · cm or less is used, Ti (55 μΩ · cm) can be used. cm).

【0022】以下に、代表的な金属の20℃における比
抵抗値を示す。単位は、μΩ・cmである(同書、p10
参照)。
The specific resistance of a typical metal at 20 ° C. is shown below. The unit is μΩ · cm (Id., P10
reference).

【0023】Ag:1.6、Al:2.69、Au:
2.3、Cd:7.4、Co:6.24、Cr:12.
9、Cu:1.67、Fe:9.71 In:9.0、Ni:6.84、Zn:5.92、好ま
しい組み合わせとしては、例えば、Cr/Ni/Al、
Cr/Ni/Cu/Al、Cr/Cu/Ni/Al等を
挙げることができる。
Ag: 1.6, Al: 2.69, Au:
2.3, Cd: 7.4, Co: 6.24, Cr: 12.
9, Cu: 1.67, Fe: 9.71 In: 9.0, Ni: 6.84, Zn: 5.92, and preferable combinations include, for example, Cr / Ni / Al,
Cr / Ni / Cu / Al, Cr / Cu / Ni / Al and the like can be mentioned.

【0024】また、複層構成の金属蒸着膜14の各層厚
みは、0.01〜0.5μm、望ましくは、0.02〜
0.2μmとし、合計厚みで、0.02〜1.0μm、
望ましくは、0.04〜0.4μmとする。厚みが薄す
ぎると、シールド効果を得難く、厚すぎても、それ以上
のシールド効果を得難く、生産効率も低下する。
The thickness of each layer of the metal vapor deposited film 14 having a multilayer structure is 0.01 to 0.5 μm, preferably 0.02 to 0.5 μm.
0.2 μm, 0.02-1.0 μm in total thickness,
Desirably, the thickness is 0.04 to 0.4 μm. If the thickness is too thin, it is difficult to obtain a shielding effect, and if it is too thick, it is difficult to obtain a further shielding effect, and the production efficiency is reduced.

【0025】上記蒸着膜の形成方法は、通常、コスト的
見地から真空蒸着によるが、スパッタリング、イオンプ
レーティング等であっても勿論よい。なお、真空蒸着の
条件は、通常、3×10-5Torr(4×10-3Pa) 以下
で、温度80℃以下とする。
The method of forming the above-mentioned deposited film is usually vacuum deposition from the viewpoint of cost. However, it is needless to say that sputtering, ion plating or the like may be used. The vacuum deposition conditions are usually 3 × 10 −5 Torr (4 × 10 −3 Pa) or less and the temperature is 80 ° C. or less.

【0026】(3) 金属酸化物蒸着膜16を形成する金属
酸化物としては、SiO2 、Al23等を挙げることが
できるが、SiO2 等のケイ素酸化物が望ましい。
(3) Examples of the metal oxide forming the metal oxide deposited film 16 include SiO 2 and Al 2 O 3, and a silicon oxide such as SiO 2 is preferable.

【0027】金属酸化物蒸着膜の厚みは、0.05〜
0.5μm、望ましくは0.08〜0.3μmとする。
0.05μm以下では、絶縁効果及び表面保護効果が得
難く、0.5μmを越えると、それ以上の絶縁効果及び
表面保護効果を期待できないとともに生産効率も低下す
る。
The thickness of the deposited metal oxide film is 0.05 to
0.5 μm, preferably 0.08 to 0.3 μm.
When the thickness is less than 0.05 μm, it is difficult to obtain an insulating effect and a surface protection effect.

【0028】 上記蒸着膜の形成方法は、上記、金属膜
の場合と同様、通常、コスト的見地から真空蒸着による
が、スパッタリング、イオンプレーティング等であって
も勿論よい。なお、真空蒸着の条件は、通常、3×10
-5 Torr(4×10-3Pa)以下で、温度80℃以下とす
る。
As in the case of the metal film, the method of forming the above-mentioned vapor-deposited film is usually vacuum deposition from the viewpoint of cost. However, it goes without saying that sputtering, ion plating or the like may be used. The conditions of vacuum deposition are usually 3 × 10
- at 5 Torr (4 × 10 -3 Pa ) or less, a temperature 80 ° C. or less.

【0029】なお、金属酸化物蒸着膜16の上にはシリ
コーン系等の樹脂ハード塗膜を形成してもよい。
It should be noted that a resin-based hard coating such as a silicone resin may be formed on the metal oxide deposited film 16.

【0030】[0030]

【実施例】以下、本発明の効果を確認するために行った
実施例について説明する。
EXAMPLES Examples performed to confirm the effects of the present invention will be described below.

【0031】(1) ポリカーボネート基材(成形品本体:
厚み1.2mm)12の上に、下記金属ないし金属酸化物
を用いて下記設定膜厚で、金属蒸着膜14a,14b,
14cを真空蒸着(条件:3×10-5Torr、50℃)に
より順次形成した。
(1) Polycarbonate substrate (molded article body:
The following metal or metal oxide is used to form a metal deposition film 14a, 14b,
14c was sequentially formed by vacuum deposition (condition: 3 × 10 −5 Torr, 50 ° C.).

【0032】 第1層:Cr 0.04μm 第2層:Ni 0.13μm 第3層:Al 0.15μm (2) 上記で得た電磁波シールド成形品について、電界及
び磁界におけるシール度をKEC法により測定した。な
お、測定機器は、スペクトラムアナライザーとして「T
R4172」(アドバンテスト社製商品名)及びシール
ド材評価器として「MA8602B」(アンリツ社製商
品名)を使用した。
First layer: Cr 0.04 μm Second layer: Ni 0.13 μm Third layer: Al 0.15 μm (2) For the obtained electromagnetic wave shield molded product, the degree of sealing in an electric field and a magnetic field was determined by the KEC method. It was measured. In addition, the measuring instrument is a "T
R4172 "(trade name, manufactured by Advantest) and" MA8602B "(trade name, manufactured by Anritsu Corporation) were used as a shield material evaluation device.

【0033】 測定結果を示す(電場)及び図
(磁場)から、いずれも、広い周波数領域において良好
なシールド効果(減衰量)を示すことが分かる。即ち、
特に高周波数(1GHz)側で、電場、磁場ともに、3
0dB以上の減衰量を示した。なお、成形品基材のみに
ついても、シールド効果を測定したが、全周波数領域
で、0dBであり、全く遮蔽効果を示さなかった。
The measurement resultsShowFigure2(Electric field) and figure3
(Magnetic field), all good in a wide frequency range
It can be seen that a large shielding effect (attenuation amount) is exhibited. That is,
Especially on the high frequency (1 GHz) side, both electric and magnetic fields are 3
The attenuation was 0 dB or more. It should be noted that only the molded product base material
We also measured the shielding effect,
And 0 dB, showing no shielding effect at all.

【0034】[0034]

【発明の作用・効果】本発明の電磁波シールド成形品
は、前述の実施例で支持される如く、広い周波数領域で
の効率的な電磁波シールドが可能となる。
The electromagnetic wave shield molded product of the present invention enables efficient electromagnetic wave shielding in a wide frequency range as supported by the above-described embodiment.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の電磁波シールド成形品の層構造を示す
断面図
FIG. 1 is a cross-sectional view showing a layer structure of an electromagnetic wave shield molded product of the present invention.

【図2】電界におけるシールド効果を示す減衰グラフ図FIG. 2 is an attenuation graph showing a shielding effect in an electric field.

【図3】磁界におけるシールド効果を示す減衰グラフ図FIG. 3 is an attenuation graph showing a shielding effect in a magnetic field.

【符号の説明】[Explanation of symbols]

12 成形品本体 14a,14b,14c 金属蒸着膜 16 金属酸化物蒸着膜 12 Molded product main body 14a, 14b, 14c Metal deposited film 16 Metal oxide deposited film

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平6−177571(JP,A) 特開 昭62−5699(JP,A) 特開 平3−232974(JP,A) 特開 平2−97097(JP,A) 特開 平7−133361(JP,A) 特開 平8−236976(JP,A) 実開 昭59−87181(JP,U) (58)調査した分野(Int.Cl.7,DB名) H05K 9/00 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-6-177571 (JP, A) JP-A-62-5699 (JP, A) JP-A-3-232974 (JP, A) JP-A-2- 97097 (JP, A) JP-A-7-133361 (JP, A) JP-A-8-236976 (JP, A) JP-A-59-87181 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H05K 9/00

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 プラスチック成形品基材の表面側または
内側に、電磁波シールド能を有する複層構成の金属蒸着
膜が形成されてなる電磁波シールド成形品において、 前記金属蒸着膜が、前記プラスチック成形品基材側から
クロム、ニッケル、アルミニウムの順の3層の複層構成
であることを特徴とする電磁波シールド成形品。
On the surface side or inner 1. A plastic article substrate, in the electromagnetic shielding molded article metallized film with a multilayer structure is formed having an electromagnetic shielding ability, the metal deposited film, the plastic article An electromagnetic wave shield molded product having a multilayer structure of three layers of chromium, nickel, and aluminum in order from the base material side.
【請求項2】 プラスチック成形品基材の表面側または
内側に、電磁波シールド能を有する複層構成の金属蒸着
膜が形成されてなる電磁波シールド成形品において、 前記金属蒸着膜が、前記プラスチック成形品基材側から
クロム、ニッケル、アルミニウムの順であって、さらに
クロム−ニッケル間又はニッケル−アルミニウム間に銅
層を有する4層の複層構成であることを特徴とする電磁
波シールド成形品。
2. The surface side of a plastic molded article substrate or
Inside, multi-layer metal deposition with electromagnetic shielding ability
In the electromagnetic wave shield molded product in which a film is formed, the metal deposition film is formed from the plastic molded product base material side.
Chromium, nickel, aluminum in that order, and
Copper between chromium and nickel or between nickel and aluminum
Characterized in that it has a multilayer structure of four layers having layers.
Wave shield molded product.
【請求項3】 さらに前記金属蒸着膜の表面側に金属酸
化物蒸着膜が形成されていることを特徴とする請求項1
又は2に記載の電磁波シールド成形品。
3. The method according to claim 1, further comprising forming a metal oxide deposited film on the surface of the metal deposited film.
Or the molded product of the electromagnetic wave shield according to 2.
【請求項4】 前記金属酸化物蒸着膜が酸化ケイ素であ
ることを特徴とする請求項3記載の電磁波シールド成形
品。
4. The molded article according to claim 3, wherein the metal oxide deposited film is silicon oxide.
JP27917097A 1997-10-13 1997-10-13 Electromagnetic wave shield molded product Expired - Fee Related JP3194185B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27917097A JP3194185B2 (en) 1997-10-13 1997-10-13 Electromagnetic wave shield molded product

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27917097A JP3194185B2 (en) 1997-10-13 1997-10-13 Electromagnetic wave shield molded product

Publications (2)

Publication Number Publication Date
JPH11121961A JPH11121961A (en) 1999-04-30
JP3194185B2 true JP3194185B2 (en) 2001-07-30

Family

ID=17607431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27917097A Expired - Fee Related JP3194185B2 (en) 1997-10-13 1997-10-13 Electromagnetic wave shield molded product

Country Status (1)

Country Link
JP (1) JP3194185B2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19937284B4 (en) * 1999-08-06 2008-10-30 GfO Gesellschaft für Oberflächentechnik mbH Electrically conductive multilayer structure
ES2358196T3 (en) * 2005-01-26 2011-05-06 Robert Bosch Gmbh MICROPHONE.
KR100723410B1 (en) 2005-08-17 2007-05-30 삼성전자주식회사 Mehtod of fabricating resistive probe having self-aligned metal shield
JP2008050047A (en) * 2006-08-28 2008-03-06 Orient Sokki Computer Kk Apparatus for making mobile terminal communication impossible
JP5202377B2 (en) * 2008-04-21 2013-06-05 信越ポリマー株式会社 Coverlay film and flexible printed wiring board
JP5193903B2 (en) * 2009-02-26 2013-05-08 信越ポリマー株式会社 Coverlay film, flexible printed wiring board and optical transceiver
JP6397806B2 (en) * 2015-09-11 2018-09-26 東芝メモリ株式会社 Semiconductor device manufacturing method and semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987181U (en) * 1982-12-01 1984-06-13 東京電子工業株式会社 electromagnetic shield box
JPS625699A (en) * 1985-07-02 1987-01-12 株式会社 麗光 Electromagnetic wave shielding cu thin film
JPH0297097A (en) * 1988-10-03 1990-04-09 Matsushita Electric Ind Co Ltd Electromagnetic shielding material
JPH03232974A (en) * 1990-02-07 1991-10-16 Fujitsu Ltd Formation of shielding film for plastic
JPH06177571A (en) * 1992-12-01 1994-06-24 Fujitsu Kasei Kk Electronic equipment case and manufacture thereof
JP2817891B2 (en) * 1993-11-08 1998-10-30 中外イングス株式会社 Manufacturing method of electromagnetic wave shielding plastic molded products
JPH08236976A (en) * 1995-02-23 1996-09-13 Chiyuugai Ingusu Kk Electromagnetic shield plastic molded item

Also Published As

Publication number Publication date
JPH11121961A (en) 1999-04-30

Similar Documents

Publication Publication Date Title
CN104885587B (en) Electromagnetic wave absorption board and its manufacture method and the electronic equipment for including it
JP3194185B2 (en) Electromagnetic wave shield molded product
US4522890A (en) Multilayer high attenuation shielding structure
JP3103597U (en) Metal-coated fiber cloth for electromagnetic wave shielding
JP2007243122A (en) Film forming method of shield film by sputtering and formed shield film
JP4122541B2 (en) Shield material
RU2217887C2 (en) Method for manufacturing support provided with coating shielding it from negative effect of radiation; shielding material
JP3811272B2 (en) Electromagnetic wave shielding casing and manufacturing method thereof
JP3290389B2 (en) Surface coatings for insulating materials, methods of obtaining them, and applications in the protection of insulating containers
JPH06177571A (en) Electronic equipment case and manufacture thereof
US20010004557A1 (en) Flat conductor ribbon cable
KR100848288B1 (en) Laminated structure having high resistance metal thin film of enhanced durability and reliability and forming method thereof
JPH1120076A (en) Transparent conductive film and electromagnetic wave shield filter using the same
JPS61127197A (en) Plastic housing having electromagnetic wave shielding property
JPH10323932A (en) Transparent conductive film
CN113617611A (en) Preparation method of electromagnetic shielding cover, electromagnetic shielding cover and electronic equipment
JP2020155584A (en) Electromagnetic wave shield film, and manufacturing method thereof
TWM483635U (en) Chip package structure having electromagnetic interference prevention film coating
CN113710080A (en) Electromagnetic noise suppressor
JPS625699A (en) Electromagnetic wave shielding cu thin film
WO2021206039A1 (en) Metallized film and method for producing same
JPH06169191A (en) Electromagnetic wave shielding molded material which is used also as a printed board, and manufacture thereof
US20070048525A1 (en) Method for forming plated coating, electromagnetic shielding member, and housing
JPS62181488A (en) Film material for flexible printed circuit
JPH0227800A (en) Metal vapor-deposited film for shielding electromagnetic wave

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20010410

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130601

Year of fee payment: 12

LAPS Cancellation because of no payment of annual fees