JP3097383B2 - Power semiconductor device - Google Patents

Power semiconductor device

Info

Publication number
JP3097383B2
JP3097383B2 JP05087080A JP8708093A JP3097383B2 JP 3097383 B2 JP3097383 B2 JP 3097383B2 JP 05087080 A JP05087080 A JP 05087080A JP 8708093 A JP8708093 A JP 8708093A JP 3097383 B2 JP3097383 B2 JP 3097383B2
Authority
JP
Japan
Prior art keywords
wire
power semiconductor
bonding
electrode
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05087080A
Other languages
Japanese (ja)
Other versions
JPH06302639A (en
Inventor
仁 大貫
正博 小泉
隆一 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP05087080A priority Critical patent/JP3097383B2/en
Publication of JPH06302639A publication Critical patent/JPH06302639A/en
Application granted granted Critical
Publication of JP3097383B2 publication Critical patent/JP3097383B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【産業上の利用分野】本発明はパワー半導体装置に関
し、とくに大電流を通電しても高信頼性の得られるワイ
ヤボンデイング材料，構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power semiconductor device and, more particularly, to a wire bonding material and a structure capable of obtaining high reliability even when a large current is applied.

【０００２】[0002]

【従来の技術】従来からＩＧＢＴ，ＧＴＯ，パワートラ
ンジスタなどのパワー半導体スイッチング素子が絶縁容
器内に封入されたパワー半導体モジュールが知られてい
る。これらの素子は、その耐圧や電流容量に応じて各種
インバータ装置などに応用されている。中でもＩＧＢＴ
は電圧制御素子のため制御が容易であり、大電流の高周
波動作が可能なことから近年注目されている素子であ
る。パワー半導体モジュールはインバータ装置に応用さ
れることが多いため、素子としては前記ＩＧＢＴとフリ
ーホイール用のダイオードが同一モジュール内に並列に
設置されることが多い。また、パワー半導体モジュール
を大容量化するためにはパワー半導体素子を数個ないし
それ以上同一モジュール内に並列して配置する必要があ
る。ダイオード或いはＩＧＢＴのアルミ電極表面と共通
電極，制御電極とは太さ５００μｍから３００μｍのワ
イヤで超音波接続されている。2. Description of the Related Art A power semiconductor module in which a power semiconductor switching element such as an IGBT, a GTO, or a power transistor is sealed in an insulating container has been known. These elements are applied to various inverter devices and the like according to their withstand voltage and current capacity. IGBT among them
Is an element that has attracted attention in recent years because it is easy to control because it is a voltage control element and is capable of high-frequency operation with a large current. Since the power semiconductor module is often applied to an inverter device, the IGBT and the diode for freewheel are often installed in the same module in parallel as elements. Further, in order to increase the capacity of the power semiconductor module, it is necessary to arrange several or more power semiconductor elements in parallel in the same module. The surface of the diode or IGBT aluminum electrode is ultrasonically connected to the common electrode and the control electrode by a wire having a thickness of 500 μm to 300 μm.

【０００３】ＩＧＢＴモジュールを大電流化するため、
またインバータ装置に適用するためＩＧＢＴチップ，ダ
イオードチップを同一モジュール内に数個並列に配置さ
れる。しかし、大電流の繰り返し通電により、Ｓｉチッ
プ，ワイヤに温度上昇，下降が生じる。これに伴って、
ＳｉとＡｌの熱膨張係数の差に基づく、繰り返し熱応力
がワイヤ／Ｓｉ界面に発生する。熱応力は通電電流が大
きい程、すなわち温度上昇の程度が大きい程大きい。こ
の応力により、特に冷却時に、Ａｌワイヤ／Ａｌ電極膜
界面の初期クラックが進展していき、ワイヤが破断する
という問題がある。To increase the current of an IGBT module,
Further, several IGBT chips and diode chips are arranged in parallel in the same module for application to the inverter device. However, due to the repetitive energization of a large current, the temperature of the Si chip and the wire rises and falls. Along with this,
Repeated thermal stress is generated at the wire / Si interface based on the difference between the thermal expansion coefficients of Si and Al. The thermal stress increases as the energizing current increases, that is, as the degree of temperature rise increases. Due to this stress, there is a problem that an initial crack at the interface of the Al wire / Al electrode film develops, particularly during cooling, and the wire breaks.

【０００４】[0004]

【発明が解決しようとする課題】従来の太さのＡｌワイ
ヤではＡｌとＡｌ膜の接合面積を充分に大きく出来ず接
合強度を充分に高くできなかった。５００μｍ以下のワ
イヤでは接合強度を高くしようとしてつぶれ幅を大きく
しても、つぶれ幅Ｗに対する接合長さＬの比が０.９ 以
上になると、真実接合面積は増加せず、つぶれ幅のみが
増加し、接合形状不良になるという問題がある。またダ
メージもおこりやすい。接合面積が小さい、すなわち接
合強度が低いと、使用時の繰り返し熱応力により、Ａｌ
ワイヤ／Ａｌ膜界面の初期クラックが進行することによ
るワイヤ破断時間が短い、すなわち高い信頼性を保証で
き無くなる。さらに、５００μｍ以下のワイヤ、特に30
0μｍワイヤの場合は、繰り返し通電によるワイヤ発熱
により、ワイヤの温度は数十度上昇し、これが伝熱によ
りＡｌワイヤ接合部にも伝達される。接合部の温度が高
いほど、熱応力は高い、すなわちクラック進展速度は大
きくなる為、ワイヤは太い方が好ましい。With the conventional thick Al wire, the bonding area between the Al and the Al film cannot be made sufficiently large and the bonding strength cannot be made sufficiently high. For wires of 500 μm or less, even if the crushing width is increased to increase the bonding strength, if the ratio of the bonding length L to the crushing width W becomes 0.9 or more, the true bonding area does not increase, only the crushing width increases. However, there is a problem that the joint shape becomes poor. Damage is also easy to occur. When the bonding area is small, that is, when the bonding strength is low, due to repeated thermal stress during use, Al
The wire breakage time due to the progress of the initial crack at the wire / Al film interface is short, that is, high reliability cannot be guaranteed. Furthermore, wires of 500 μm or less, especially 30
In the case of a 0 μm wire, the temperature of the wire rises by several tens of degrees due to the heat generated by the repeated energization, and this is also transmitted to the Al wire joint by heat transfer. The higher the temperature of the joint, the higher the thermal stress, that is, the higher the rate of crack propagation.

【０００５】本発明の目的は実使用時の大電流繰り返し
通電によってもＡｌワイヤ剥がれのない、高信頼性を有
するパワーモジュールを提供することにある。It is an object of the present invention to provide a highly reliable power module that does not peel off the Al wire even when a large current is repeatedly applied during actual use.

【０００６】[0006]

【課題を解決するための手段】実使用時の繰り返し応力
による初期クラックの進展速度を小さくするとともに接
合面積をできるだけ大きくしてワイヤ破断までの時間を
できるだけ長くするために５５０μｍのＡｌワイヤを使
用した点に本発明の特徴がある。すなわち、複数個のＩ
ＧＢＴチップ及びダイオードチップと、これらのチップ
が搭載された第１の共通電極と、前記第１の共通電極に
接続ないし一体化された第１の内部端子及び容器表面の
第１の外部主端子と、前記ＩＧＢＴチップ及びダイオー
ドチップのＡｌ電極表面に複数本のＡｌワイヤによって
接続された第２の共通電極と、前記第２の共通電極に接
続ないし一体化された第２の内部端子及び容器表面の第
２の外部端子と、前記パワー半導体チップのＡｌ電極表
面に複数本のＡｌワイヤによって接続された制御電極
と、前記制御電極に接続ないし一体化された内部制御端
子及び容器表面の外部制御端子と、前記第２の共通電極
に接続ないし一体化された内部補助端子および容器表面
の外部補助端子と、これらの電極などを絶縁する絶縁
板，絶縁樹脂及び絶縁容器を有するパワー半導体におい
て、Ａｌワイヤは直径５５０μｍであり、接合長さは５
００から８００μｍの範囲でありかつつぶれ幅の接合部
長さに対する比が０.９ 以上で、Ａｌ電極はＡｌ−１ｗ
ｔ％合金膜であるようにした。In order to reduce the growth rate of the initial crack due to the repetitive stress in actual use, to increase the bonding area as much as possible, and to make the time until the wire break as long as possible, a 550 μm Al wire was used. There is a feature of the present invention in this point. That is, a plurality of I
A GBT chip and a diode chip, a first common electrode on which these chips are mounted, a first internal terminal connected to or integrated with the first common electrode, and a first external main terminal on the surface of the container. A second common electrode connected to the surface of the Al electrode of the IGBT chip and the diode chip by a plurality of Al wires; a second internal terminal connected to or integrated with the second common electrode; A second external terminal, a control electrode connected to the Al electrode surface of the power semiconductor chip by a plurality of Al wires, an internal control terminal connected to or integrated with the control electrode, and an external control terminal on the container surface. An internal auxiliary terminal connected to or integrated with the second common electrode and an external auxiliary terminal on the surface of the container; In the power semiconductor having a vessel, Al wire has a diameter of 550 .mu.m, the junction length is 5
In the range of 00 to 800 μm, the ratio of the wobble width to the joint length is 0.9 or more, and the Al electrode is Al-1w.
It was a t% alloy film.

【０００７】[0007]

【作用】直径５５０μｍワイヤを用い、つぶれ幅の接合
長さに対する比を０.９ 以上にすることにより、５００
μｍワイヤに比べ接合強度を１.２ 倍以上高く出来る。
これは、ワイヤを太くすることにより、Ｓｉチップへの
応力集中を緩和できるため、チップダメージを発生させ
ることなくワイヤつぶれを大きく出来、その結果接合強
度を高く出来る。さらに、ワイヤ径を太くすることによ
り、ワイヤ発熱による温度上昇をすくなく出来るため、
接合部に発生する熱応力を小さく出来る。このことによ
り、接合部の熱疲労寿命を従来に比べ一段と向上させる
ことが出来る。By using a 550 μm diameter wire and setting the ratio of the collapse width to the joint length to 0.9 or more, 500
The bonding strength can be 1.2 times or more higher than that of a μm wire.
This is because, by making the wire thicker, stress concentration on the Si chip can be reduced, so that the wire crush can be increased without causing chip damage, and as a result, the bonding strength can be increased. Furthermore, by increasing the wire diameter, the temperature rise due to the heat generated by the wire can be minimized,
Thermal stress generated at the joint can be reduced. As a result, the thermal fatigue life of the joint can be further improved as compared with the related art.

【０００８】[0008]

【実施例】以下本発明の実施例を図面を用いて説明す
る。図１は各ボンデイングワイヤで超音波ボンデイング
したときのせん断強度に及ぼすＷ／Ｌ（Ｗ：つぶれ幅、
Ｌ：接合長さ）の影響を示している。ここでＬは７００
μｍである。図２はダメージ発生率に及ぼすＷ／Ｌの影
響を示している。５００μｍワイヤの場合、Ｗ／Ｌが
０.８以上になると接合強度は飽和する傾向を示す。ま
た、Ｗ／Ｌが０.９以上になると、ダメージも発生す
る。このことから、５００μｍワイヤでの接合強度の最
大値は３.３kg 程度であることが解る。一方、５５０μ
ｍワイヤのばあい、ダメージはＷ／Ｌが１.３以上にな
らないと発生せず、１.２のときの接合強度は４.７kgに
も達する。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows the effect of W / L (W: collapse width, on the shear strength when ultrasonic bonding is performed with each bonding wire).
L: bond length). Where L is 700
μm. FIG. 2 shows the effect of W / L on the damage occurrence rate. In the case of a 500 μm wire, when W / L is 0.8 or more, the bonding strength tends to be saturated. When W / L is 0.9 or more, damage occurs. From this, it is understood that the maximum value of the bonding strength with a 500 μm wire is about 3.3 kg. On the other hand, 550μ
In the case of the m-wire, damage does not occur unless the W / L is 1.3 or more, and the bonding strength at 1.2 is as high as 4.7 kg.

【０００９】また、５５０μｍワイヤでは、Ｗ／Ｌが
０.９ 以上でないと高い接合強度は得られない。従っ
て、最適Ｗ／Ｌとしては０.９−１.２がよい。５５０μ
ｍワイヤにおいてＷ／Ｌ大きくても、ダメージが発生し
ないのは、接合時におけるＳｉチップの応力集中の度合
が５００μｍの場合に比べ、小さいことによると考えら
れる。[0009] In the case of a 550 µm wire, high bonding strength cannot be obtained unless W / L is 0.9 or more. Therefore, 0.9-1.2 is preferable as the optimum W / L. 550μ
It is considered that the reason why no damage occurs even if the W / L is large in the m wire is that the degree of stress concentration of the Si chip at the time of bonding is smaller than that in the case of 500 μm.

【００１０】図３はワイヤボンディング部を拡大した模
式図を示したものである。本発明で述べるつぶれ幅とは
Ｗをさし、接合長さとはＬをさしている。５５０μｍワ
イヤではこのＷが大きく、接合面積が大きくなると共
に、ワイヤの長さ方向におけるクラック進展の抵抗にな
ると考えられる。FIG. 3 is an enlarged schematic view of the wire bonding portion. The collapse width described in the present invention refers to W, and the joint length refers to L. In the case of a 550 μm wire, this W is large, so that the bonding area is increased, and it is considered that this becomes a resistance to crack propagation in the length direction of the wire.

【００１１】図４はＷ／Ｌが１.０ のときのせん断強度
に及ぼす接合長さの影響を示している。５００μｍから
８００μｍの範囲で最も高いせん断強度が得られること
がわかる。これは、８００μｍ以上になるとツールから
Ａｌワイヤにこれを十分に変形し、Ａｌ膜と十分に接合
するだけのエネルギーをワイヤに与えられないこと及び
５００μｍ以下になると接合面積がかなり小さくなるこ
とによる。FIG. 4 shows the effect of the joint length on the shear strength when W / L is 1.0. It can be seen that the highest shear strength is obtained in the range of 500 μm to 800 μm. This is due to the fact that the tool is sufficiently deformed from a tool to an Al wire when the thickness is 800 μm or more, and energy cannot be given to the wire enough to bond to the Al film.

【００１２】図５は本発明の一実施例であり、１個のモ
ジュール単位の平面図を示したものである。また、図６
は１個のモジュール単位の断面図を示したものである。
本実施例ではＩＧＢＴチップ１０１が６個、ダイオード
チップ１０２が２個、例えばＣｕからなるコレクタ共通
電極板１０３上に分散配置されている。各チップは例え
ばＭｏからなる緩衝板を挟んでコレクタ共通電極板１０
３に接合されている。コレクタ共通電極板１０３は半田
接合部１０４を介してコレクタ内部端子１０５に接続さ
れる。コレクタ内部端子１０５は折れ曲がっており立ち
上がり部１０６から図１では紙面に垂直方向に内部端子
がある。エミッタ電極１０７は絶縁板１０８を介してコ
レクタ共通電極板１０３の周縁部に存在し、コレクタ内
部端子と対抗した位置で立上り部１０９からエミッタ内
部端子１１０に接続している。ダイオードチップ１０２
はＩＧＢＴチップ１０１よりエミッタ内部端子１１０に
近接して配置されている。また、ゲート電極１１１はコ
レクタ内部端子１０５とエミッタ内部端子１１０を結ぶ
軸上にあり、絶縁板１１２を介して接合されている。ゲ
ート内部端子は立上り部１１３で電極と接続している。
ゲート，エミッタ内部端子１１４，１１５は２本で、エ
ミッタ端子とコレクタ端子を結ぶ軸についてほぼ対称に
配置されている。６個のＩＧＢＴチップと２個のダイオ
ードチップはそれぞれ半分ずつゲート電極１１１の両側
に配置されている。また、チップ及び電極，端子などは
コレクタ内部端子１０５とエミッタ内部端子１１０を結
ぶ軸についてほぼ対称に配置されている。チップ表面と
各Ｎｉめっき層を有する電極は直径５５０μｍＡｌワイ
ヤによって超音波接続されている。ここでつぶれ幅Ｗに
対する接合長さＬの比は０.９−１.２の範囲にある。FIG. 5 shows an embodiment of the present invention, and shows a plan view of one module unit. FIG.
Is a sectional view of one module unit.
In this embodiment, six IGBT chips 101 and two diode chips 102 are dispersedly arranged on a collector common electrode plate 103 made of, for example, Cu. Each chip has a collector common electrode plate 10 with a buffer plate made of Mo interposed therebetween.
3. Collector common electrode plate 103 is connected to collector internal terminal 105 via solder joint 104. The collector internal terminal 105 is bent, and there is an internal terminal in a direction perpendicular to the plane of FIG. The emitter electrode 107 is present at the periphery of the collector common electrode plate 103 via the insulating plate 108, and is connected from the rising portion 109 to the emitter internal terminal 110 at a position opposed to the collector internal terminal. Diode chip 102
Are arranged closer to the emitter internal terminal 110 than the IGBT chip 101. Further, the gate electrode 111 is on an axis connecting the collector internal terminal 105 and the emitter internal terminal 110, and is joined via an insulating plate 112. The gate internal terminal is connected to the electrode at the rising portion 113.
There are two gate and emitter internal terminals 114 and 115, which are arranged substantially symmetrically about an axis connecting the emitter terminal and the collector terminal. Six IGBT chips and two diode chips are respectively arranged on both sides of the gate electrode 111 by half. The chip, electrodes, terminals and the like are arranged substantially symmetrically with respect to an axis connecting the collector internal terminal 105 and the emitter internal terminal 110. The chip surface and the electrode having each Ni plating layer are ultrasonically connected by a 550 μm diameter Al wire. Here, the ratio of the joint length L to the crush width W is in the range of 0.9-1.2.

【００１３】図７は各ワイヤで超音波接続したモジュー
ルに正弦半波の大電流を与え、各サイクル毎に接続強度
を測定し、これらの結果をまとめたものである。ここで
電流の幅は１０ｍｓであり、ピーク電流の値は３００Ａ
である。接合強度は、ワイヤをせん断試験機で横から静
かに押して、ワイヤが破断する強度とした。各ワイヤの
接合強度はサイクル数と共に低下して行くことが解る。
しかし２０ｋサイクル後の強度は５５０μｍのそれがも
っとも高く、例えば接合強度１.５kg で比較したときの
寿命は５００μｍの約２倍程度高いと推定される。FIG. 7 shows a result obtained by applying a large half-sine current to a module ultrasonically connected with each wire, measuring the connection strength at each cycle, and summing up the results. Here, the width of the current is 10 ms, and the value of the peak current is 300 A
It is. The bonding strength was determined as the strength at which the wire was broken by gently pushing the wire from the side with a shear tester. It can be seen that the bonding strength of each wire decreases with the number of cycles.
However, the strength after 20 k cycles is the highest at 550 μm, and for example, it is estimated that the life when compared with a bonding strength of 1.5 kg is about twice as long as 500 μm.

【００１４】[0014]

【発明の効果】以上述べたように、本発明によれば、５
５０μｍの太さのワイヤを用い、接合長さを５００〜８
００μｍの範囲とし、かつ、つぶれ幅の接合長さに対す
る比を０.９−１.２にすることにより、従来に比べ接合
強度が高く、しかも実使用時におけるワイヤ発熱がすく
ないことによる接合部温度上昇のすくない、すなわち、
ワイヤボンデイング部が断線しにくい高信頼性のパワー
モジュールが得られる。さらに、接合面積が大きいた
め、接合部の電流密度もすくないので、Ａｌ電極膜のエ
レクトロマイグレーションによる断線がおこりにくい。
また、Ｓｉチップの応力集中も起こりにくく、ボンデイ
ングダメージが発生しにくいという効果がある。As described above, according to the present invention, 5
Using a wire having a thickness of 50 μm, the joining length is 500 to 8
By setting the ratio of the crushing width to the bonding length to 0.9-1.2 in the range of 00 μm, the bonding strength is higher than in the past, and the temperature of the bonding portion due to less wire heat generation in actual use. Not ascending, that is,
A highly reliable power module in which the wire bonding portion is hardly broken can be obtained. Furthermore, since the junction area is large, the current density at the junction is also low, so that the Al electrode film hardly breaks due to electromigration.
In addition, there is an effect that stress concentration of the Si chip hardly occurs and bonding damage hardly occurs.

【図面の簡単な説明】[Brief description of the drawings]

【図１】せん断強度とつぶれ幅との関係を示す図であ
る。FIG. 1 is a diagram showing the relationship between shear strength and crush width.

【図２】ダメージ発生率を示す図である。FIG. 2 is a diagram showing a damage occurrence rate.

【図３】ワイヤボンデイング部の拡大摸式図である。FIG. 3 is an enlarged schematic diagram of a wire bonding unit.

【図４】接合長さとせん断強度の関係を示す図である。FIG. 4 is a diagram showing a relationship between a joining length and a shear strength.

【図５】本発明の一実施例であるパワー半導体装置を示
す図である。FIG. 5 is a diagram showing a power semiconductor device according to one embodiment of the present invention.

【図６】本発明の一実施例であるパワー半導体装置の断
面図である。FIG. 6 is a cross-sectional view of a power semiconductor device according to one embodiment of the present invention.

【図７】信頼性試験結果を示す図である。FIG. 7 is a diagram showing the results of a reliability test.

【符号の説明】[Explanation of symbols]

１０１…ＩＧＢＴ、１０２…ダイオード、１０３…コレ
クタ共通電極、１０４…半田接合部、１０５…コレクタ
内部端子、１０６，１０９，１１３…立ち上がり部、１
０７…エミッタ電極、１０８…エミッタ，絶縁板、１１
０…エミッタ内部端子、１１１…ゲート電極、１１２…
ゲート絶縁板、１１４，１１５…ゲートエミッタ内部端
子、１１６…５５０μｍＡｌワイヤ、１１８…絶縁板。101: IGBT, 102: diode, 103: collector common electrode, 104: solder joint, 105: collector internal terminal, 106, 109, 113: rising part, 1
07 ... emitter electrode, 108 ... emitter, insulating plate, 11
0 ... emitter internal terminal, 111 ... gate electrode, 112 ...
Gate insulating plate, 114, 115: Gate emitter internal terminal, 116: 550 μm Al wire, 118: Insulating plate.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平５−29371（ＪＰ，Ａ) 特開 平１−319950（ＪＰ，Ａ) 特開 昭52−87361（ＪＰ，Ａ) 特開 昭60−95953（ＪＰ，Ａ) 特開 平４−85843（ＪＰ，Ａ) 特開 平４−94141（ＪＰ，Ａ) 特開 昭60−148132（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 301 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-5-29371 (JP, A) JP-A-1-319950 (JP, A) JP-A-52-87361 (JP, A) JP-A-60-1985 95953 (JP, A) JP-A-4-85843 (JP, A) JP-A-4-94141 (JP, A) JP-A-60-148132 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/60 301

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】パワー半導体チップ上のＡｌ電極表面と、
素子外部の電極とを複数本の金属ワイヤによって接続し
たパワー半導体において、前記金属ワイヤはアルミニウ
ムで、直径５５０μｍであり、接合長さは５００から８
００μｍの範囲にあり、かつつぶれ幅の接合部長さに対
する比が０.９−１.２の範囲にあることを特徴とするパ
ワー半導体装置。An Al electrode surface on a power semiconductor chip;
In a power semiconductor in which electrodes outside the element are connected by a plurality of metal wires, the metal wires are made of aluminum, have a diameter of 550 μm, and have a bonding length of 500 to 8 mm.
A power semiconductor device, wherein the ratio is in the range of 00 μm, and the ratio of the width of the bumps to the length of the junction is in the range of 0.9 to 1.2. 【請求項２】請求項１において、Ａｌワイヤの硬さはビ
ッカース硬度で２５以下Ａｌ電極はＡｌ−１ｗｔ％Ｓｉ
合金膜であり、Ａｌ合金膜の平均結晶粒径は５μｍ以上
であることを特徴とするパワー半導体装置。2. The aluminum wire according to claim 1, wherein the hardness of the Al wire is 25 or less in Vickers hardness.
A power semiconductor device, which is an alloy film, wherein an average crystal grain size of the Al alloy film is 5 μm or more.
JP05087080A 1993-04-14 1993-04-14 Power semiconductor device Expired - Fee Related JP3097383B2 (en)

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