JP3026310B2 - Method for producing precursor solution for forming ferroelectric thin film and method for producing ferroelectric thin film - Google Patents
Method for producing precursor solution for forming ferroelectric thin film and method for producing ferroelectric thin filmInfo
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- JP3026310B2 JP3026310B2 JP2121755A JP12175590A JP3026310B2 JP 3026310 B2 JP3026310 B2 JP 3026310B2 JP 2121755 A JP2121755 A JP 2121755A JP 12175590 A JP12175590 A JP 12175590A JP 3026310 B2 JP3026310 B2 JP 3026310B2
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- thin film
- ferroelectric thin
- forming
- producing
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Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、例えば赤外線センサ、圧電フィルタ、振動
子、レーザの変調素子、光シャッタ、キャパシタ膜、不
揮発性のDRAM等に適用される例えばPT、PZT、PLZT等の
強誘電体薄膜の製造方法およびその強誘電体薄膜形成前
駆体溶液の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to, for example, a PT applied to an infrared sensor, a piezoelectric filter, a vibrator, a laser modulation element, an optical shutter, a capacitor film, a nonvolatile DRAM, and the like. The present invention relates to a method for producing a ferroelectric thin film such as PZT, PLZT and PLZT and a method for producing a precursor solution for forming a ferroelectric thin film.
〈従来の技術〉 従来のPb系強誘電体薄膜の製造方法としては例えば以
下に示す方法（特開昭60−236404号公報）がある。<Prior Art> As a conventional method for producing a Pb-based ferroelectric thin film, there is, for example, the following method (JP-A-60-236404).
まず、チタン酸鉛（PT）等の誘電体の形成前駆体を、
低級アルコール類等の有機溶媒に溶解して誘電体形成前
駆体溶液を形成する。First, a precursor for forming a dielectric such as lead titanate (PT) is
It is dissolved in an organic solvent such as lower alcohols to form a dielectric-forming precursor solution.
次いで、この誘電体形成前駆体溶液を金属基板に塗
布、乾燥して、基板上に塗膜を形成する。Next, this dielectric-forming precursor solution is applied to a metal substrate and dried to form a coating film on the substrate.
更に、この塗膜をその有機物の分解温度以上、誘電体
の結晶化温度以下の温度で仮焼する。Further, this coating film is calcined at a temperature not lower than the decomposition temperature of the organic substance and not higher than the crystallization temperature of the dielectric.
そして、これらの塗布、乾燥、仮焼を繰り返す。 Then, the application, drying, and calcination are repeated.
次いで、誘電体の結晶化温度以上の温度で焼成する。 Next, firing is performed at a temperature equal to or higher than the crystallization temperature of the dielectric.
または、この塗布、乾燥、焼成を繰り返す。 Alternatively, the application, drying and baking are repeated.
この結果、金属基板上に誘電体の薄膜が２層以上形成
されるものである。As a result, two or more dielectric thin films are formed on the metal substrate.
〈発明が解決しようとする課題〉 しかしながら、このような従来の溶液塗布によるPb含
有の複合金属酸化物（誘電体）薄膜の形成方法にあって
は、単に前駆体化合物を混ぜ合わせたものでは大気中の
水分により容易に加水分解され、均質な膜を得るのが困
難であった。そして、その膜の状態も微細な粉状となっ
ていた。<Problems to be Solved by the Invention> However, in such a conventional method of forming a Pb-containing composite metal oxide (dielectric) thin film by solution coating, it is difficult to simply mix a precursor compound with air. It was easily hydrolyzed by the moisture therein, and it was difficult to obtain a homogeneous film. The state of the film was also in a fine powder state.
すなわち、有機溶媒により安定化した化合物であって
も、熱分解時（焼成時）には、それぞれが単独の金属酸
化物を生成し、それらの固相反応で複合化するものであ
るが、その焼成時にはそれぞれの金属または化合物の揮
発性の違い（高温ではPbOは揮発し易い）から、その薄
膜の組成の制御が困難であったものである。また、１分
子レベルだけでその化合物の結合があったとしても成膜
時には微細な粉状の膜となり易く、導通を生じ易い等の
問題があった。In other words, even when a compound is stabilized by an organic solvent, during thermal decomposition (during firing), each forms a single metal oxide and is complexed by their solid-phase reaction. Because of the difference in volatility of each metal or compound during firing (PbO tends to volatilize at high temperatures), it was difficult to control the composition of the thin film. Further, even if the compound is bonded only at the single-molecule level, there is a problem that a fine powder film is easily formed at the time of film formation, and conduction is easily generated.
そこで、本発明は、鉛等の成分が均一に含まれた組成
の強誘電体薄膜を得ることを目的としている。また、本
発明は、その強誘電体薄膜形成工程において、強誘電相
であるペロブスカイト型結晶への転移を非常に容易にす
る強誘電体薄膜形成前駆体溶液の製造方法、および、こ
の形成前駆体溶液を用いた強誘電体薄膜の製造方法を提
供することを目的としている。Accordingly, an object of the present invention is to obtain a ferroelectric thin film having a composition in which components such as lead are uniformly contained. Further, the present invention provides a method for producing a ferroelectric thin film forming precursor solution which makes it very easy to transfer to a perovskite crystal which is a ferroelectric phase in the ferroelectric thin film forming step, It is an object of the present invention to provide a method for producing a ferroelectric thin film using a solution.
〈課題を解決するための手段〉 本発明は、鉛、ランタン、チタン、ジルコニウムの金
属有機化合物を有機溶媒に溶解することにより、これら
の金属のそれぞれについて酸素を介して有機基と結合し
た金属化合物の混合溶液を形成し、この混合溶液に安定
化剤を添加した後、この混合溶液に所定量の水を加え、
部分加水分解させ、混合溶液中に金属−酸素−金属結合
を形成することにより、チタン酸鉛（PT）、チタン酸ジ
ルコン酸鉛（PZT）、第３成分添加チタン酸ジルコン酸
鉛（３成分系PZT）、および、ランタン添加チタン酸ジ
ルコン酸鉛（PLZT）からなる群から選択される１種の強
誘電体薄膜を形成するための強誘電体薄膜形成前駆体溶
液を作製する強誘電体薄膜形成前駆体溶液の製造方法で
あって、上記安定化剤の添加量は、総金属原子数1molに
対して0.2〜3mol、上記水の添加量は、総金属原子数1mo
lに対して0.2〜3molである強誘電体薄膜形成前駆体溶液
の製造方法である。<Means for Solving the Problems> The present invention provides a metal compound bonded to an organic group via oxygen for each of these metals by dissolving a metal organic compound of lead, lanthanum, titanium, and zirconium in an organic solvent. After forming a mixed solution of, and adding a stabilizer to the mixed solution, a predetermined amount of water is added to the mixed solution,
By partially hydrolyzing and forming a metal-oxygen-metal bond in the mixed solution, lead titanate (PT), lead zirconate titanate (PZT), and third component-added lead zirconate titanate (three-component system) PZT) and lanthanum-added lead zirconate titanate (PLZT) to form a ferroelectric thin film forming precursor solution for forming one type of ferroelectric thin film selected from the group consisting of ferroelectric thin film formation In the method for producing a precursor solution, the amount of the stabilizer is 0.2 to 3 mol based on 1 mol of total metal atoms, and the amount of water is 1 mol of total metal atoms.
This is a method for producing a precursor solution for forming a ferroelectric thin film in an amount of 0.2 to 3 mol per 1.
また、本発明は、上記安定化剤は、β−ジケトン類、
ケトン酸類、ケトエステル類、オキシ酸類、高級カルボ
ン酸類、アミン類からなる群の内から選択される１種で
ある請求項（１）に記載の強誘電体薄膜形成前駆体溶液
の製造方法である。Further, the present invention provides the stabilizer, β-diketones,
The method for producing a precursor solution for forming a ferroelectric thin film according to claim 1, wherein the precursor solution is one selected from the group consisting of ketone acids, keto esters, oxy acids, higher carboxylic acids, and amines.
さらに、本発明は、上記請求項（１）または（２）に
記載の強誘電体薄膜形成前駆体溶液に基板上に塗布し、
乾燥、熱分解を行い酸化膜を形成した後、この酸化膜を
適当な温度で焼成することにより、チタン酸鉛（PT）、
チタン酸ジルコン酸鉛（PZT）、第３成分添加チタン酸
ジルコン酸鉛（３成分系PZT）、および、ランタン添加
チタン酸ジルコン酸鉛（PLZT）からなる群から選択され
る１種の強誘電体薄膜を形成した強誘電体薄膜の製造方
法である。Further, the present invention provides a method for applying a precursor solution for forming a ferroelectric thin film according to claim 1 or 2 on a substrate,
After drying and thermal decomposition to form an oxide film, this oxide film is fired at an appropriate temperature to obtain lead titanate (PT),
One type of ferroelectric selected from the group consisting of lead zirconate titanate (PZT), lead zirconate titanate with a third component (ternary PZT), and lead zirconate titanate with a lanthanum (PLZT) This is a method for manufacturing a ferroelectric thin film having a thin film formed thereon.
〈作用〉 本発明に係る強誘電体薄膜の製造方法にあっては、製
造する強誘電体薄膜を構成するチタン酸鉛（PT）、チタ
ン酸ジルコン酸鉛（PZT）、第３成分を添加したチタン
酸ジルコン酸鉛（３成分系PZT）、または、ランタン添
加チタン酸ジルコン酸鉛（PLZT）を、形成するための
鉛、ランタン、チタン、ジルコニウムおよびその他の成
分の有機化合物を有機溶媒に溶解する。この結果、チタ
ン、鉛、ランタン、ジルコニウム、および、これらの化
合物に酸素を介して有機基と結合した金属化合物の混合
溶液が形成される。なお、有機溶媒としては低級アルコ
ール類、β−ジケトン類、ケトン酸類、ケトエステル
類、オキシ酸類、オキシ酸エステル類等を使用する。<Function> In the method for producing a ferroelectric thin film according to the present invention, lead titanate (PT), lead zirconate titanate (PZT), and a third component, which constitute the ferroelectric thin film to be produced, are added. Dissolve organic compounds of lead, lanthanum, titanium, zirconium and other components in an organic solvent to form lead zirconate titanate (ternary PZT) or lanthanum-added lead zirconate titanate (PLZT). . As a result, a mixed solution of titanium, lead, lanthanum, zirconium, and a metal compound in which these compounds are bonded to an organic group via oxygen is formed. As the organic solvent, lower alcohols, β-diketones, ketone acids, keto esters, oxy acids, oxy acid esters, and the like are used.
次に、例えば総金属原子数1molに対して0.2〜3molの
β−ジケトン類、ケトン酸類、ケトエステル類、オキシ
酸類、高級カルボン酸類、アミン類の内の一つを、その
溶液中に添加して安定化する。金属−酸素−金属結合
を、全体としてゆるやかに重合させておくものである。
安定化剤を加え、溶液を部分的に安定化させるものであ
る。なお、安定化剤を多量に供給すると加水分解が充分
に生じず金属−酸素−金属結合が生じない虞があり、ま
た溶解度の問題から沈澱が生ずることもある。Next, for example, 0.2 to 3 mol of β-diketones, ketone acids, keto esters, oxy acids, higher carboxylic acids, and one of amines are added to the solution with respect to 1 mol of the total number of metal atoms in the solution. Stabilize. The metal-oxygen-metal bond is gradually polymerized as a whole.
A stabilizer is added to partially stabilize the solution. When a large amount of the stabilizer is supplied, hydrolysis may not be sufficiently generated, and a metal-oxygen-metal bond may not be generated. In addition, precipitation may occur due to a solubility problem.
その後、総金属原子数1molに対して0.2〜3molの水
を、この溶液中に加え、部分加水分解することによって
重合を進める。Thereafter, 0.2 to 3 mol of water per 1 mol of total metal atoms is added to this solution, and polymerization is promoted by partial hydrolysis.
このようにしてPT、PZT、PLZT等の薄膜を形成するた
めの前駆体溶液が形成されるものである。この加える水
量をコントロールすることは容易であり、その結果、前
駆体溶液の金属−酸素−金属結合を充分にコントロール
することができる。Thus, a precursor solution for forming a thin film such as PT, PZT, or PLZT is formed. It is easy to control the amount of water added, and as a result, the metal-oxygen-metal bond of the precursor solution can be sufficiently controlled.
次に、この前駆体溶液を基板上に塗布し、乾燥、熱分
解することにより酸化膜を形成する。またはこれを繰り
返すことにより所定の厚さ（例えば3,000Å程度）の薄
膜を得る。Next, this precursor solution is applied on a substrate, dried and thermally decomposed to form an oxide film. Alternatively, by repeating this, a thin film having a predetermined thickness (for example, about 3,000 mm) is obtained.
更に、この酸化膜を適当な温度（例えば600℃）で加
熱焼成し、所望の結晶相、または、２相混在（例えば強
誘電相と常誘電相）のPb含有の複合金属酸化物薄膜を形
成するものである。Further, this oxide film is heated and fired at an appropriate temperature (eg, 600 ° C.) to form a Pb-containing composite metal oxide thin film having a desired crystal phase or a mixture of two phases (eg, a ferroelectric phase and a paraelectric phase). Is what you do.
なお、薄膜の結晶の配向性に関しても特定の配向を持
った特定基板上で特定の配向膜が得られる。With respect to the crystal orientation of the thin film, a specific alignment film can be obtained on a specific substrate having a specific orientation.
本発明に係るPT、PZT等のペロブスカイト型結晶がキ
ューリー点以上で立方晶、それ以下で正方晶あるいは三
方晶をとり、温度低下とともに、その格子定数のａ軸は
縮小し、ｃ軸は伸張することに、着目することができ
る。The perovskite-type crystals such as PT and PZT according to the present invention take a cubic system at or above the Curie point, and take a tetragonal or trigonal system below the Curie point, and as the temperature decreases, the a-axis of the lattice constant decreases and the c-axis extends. In particular, attention can be paid.
すなわち、薄膜より大きな熱膨張率の基板を使った場
合、熱膨張率の差によって基板から薄膜に伝わる応力
は、温度変化の際にａ軸の挙動と一致するような方向に
働き、ａ軸は基板と平行になる傾向があり、ｃ軸配向と
なる。That is, when a substrate having a larger coefficient of thermal expansion than a thin film is used, the stress transmitted from the substrate to the thin film due to the difference in the coefficient of thermal expansion acts in a direction that matches the behavior of the a-axis when the temperature changes, and the a-axis It tends to be parallel to the substrate and has a c-axis orientation.
逆に、薄膜より小さな熱膨張の基板を使った場合はａ
軸配向となる傾向がある。Conversely, when a substrate having a smaller thermal expansion than the thin film is used, a
It tends to be axially oriented.
よって薄膜形成物質のキューリー点付近での温度の上
げ下げの繰り返しによってその配向の傾向を高めること
ができる。Therefore, the orientation tendency can be increased by repeatedly raising and lowering the temperature near the Curie point of the thin film forming substance.
本発明では、加熱焼成工程の後、その膜物質（例えば
PZT）のキューリー点を中心として冷却と加熱を繰り返
す。PZT膜と基板（例えば白金基板）の熱膨張率の差を
利用して配向性を改善することとなる。In the present invention, after the heating and firing step, the film material (for example,
Cooling and heating are repeated around the Curie point of (PZT). The orientation is improved by utilizing the difference in the coefficient of thermal expansion between the PZT film and the substrate (for example, a platinum substrate).
〈実施例〉 以下、本発明に係る強誘電体薄膜の製造方法の実施例
を説明していくが、本発明はこれらによって限定される
ものではない。<Examples> Hereinafter, examples of the method for manufacturing a ferroelectric thin film according to the present invention will be described, but the present invention is not limited thereto.
第１実施例 酢酸鉛12.64gを、２−メトキシエタノールに溶解し、
溶媒との共沸混合物として水を除去した後、テトライソ
プロポキシチタン4.55gと、テトラブトキシジルコニウ
ム6.65gを加え、さらにアセチルアセトン（安定化剤）1
0gを加えた。First Example 12.64 g of lead acetate was dissolved in 2-methoxyethanol,
After removing water as an azeotrope with the solvent, 4.55 g of tetraisopropoxytitanium and 6.65 g of tetrabutoxyzirconium were added, and acetylacetone (stabilizer) 1
0 g was added.
この混合溶液を充分に撹拌した後に、水1.8gを加え、
つづいてイソプロピルアルコールで全体を109.3gとし、
酸化物換算で10％溶液とした。強誘電体薄膜の形成前駆
体溶液を作成するものである。After sufficiently stirring this mixed solution, 1.8 g of water was added,
Then make the whole 109.3g with isopropyl alcohol,
It was a 10% solution in terms of oxide. This is for preparing a precursor solution for forming a ferroelectric thin film.
この形成前駆体溶液を、スピンコーターを用いて3,00
0rpmの条件で白金基板上に塗布した後、この塗膜を乾燥
する。Using a spin coater, the formed precursor solution
After coating on a platinum substrate under the condition of 0 rpm, this coating film is dried.
この塗布、乾燥の操作を、６回繰り返してから600℃
で１時間焼成してPZT（52/48）の薄膜を得た。This coating and drying operation is repeated 6 times and then 600 ° C
For 1 hour to obtain a thin film of PZT (52/48).
そして、このPZT薄膜の結晶性についてＸ線回折装置
を用いて調べたところ、強誘電性を示すペロブスカイト
型結晶の単相膜であることがわかった。When the crystallinity of this PZT thin film was examined using an X-ray diffractometer, it was found that the thin film was a perovskite-type single-phase film exhibiting ferroelectricity.
第２実施例 ジイソプロポキシ鉛8.13gとテトライソプロポキシチ
タン7.11gとを、イソプロピルアルコールに溶解し、さ
らにアセト酢酸エチル（安定化剤）9.75gをこれに加え
た。Second Example 8.13 g of diisopropoxy lead and 7.11 g of tetraisopropoxy titanium were dissolved in isopropyl alcohol, and 9.75 g of ethyl acetoacetate (stabilizer) was added thereto.
この混合溶液を充分に撹拌した後に、イソプロピルア
ルコールと水0.93gをこれに加え、全体で75.77gとし、
酸化物換算で10％濃度の強誘電体薄膜形成前駆体溶液を
作成した。After sufficiently stirring this mixed solution, 0.93 g of isopropyl alcohol and water was added thereto to make a total of 75.77 g,
A precursor solution for forming a ferroelectric thin film having a concentration of 10% in terms of oxide was prepared.
この前駆体溶液を、スピンコーターを用いて3,000rpm
の条件で白金基板上に塗布した後、この塗膜を乾燥す
る。Using a spin coater, this precursor solution is 3,000 rpm
After coating on a platinum substrate under the conditions described above, this coating film is dried.
この塗布、乾燥の操作を６回繰り返してから600℃で
１時間焼成してPTの薄膜を得た。This operation of coating and drying was repeated six times, and then baked at 600 ° C. for 1 hour to obtain a PT thin film.
そして、このPT薄膜の結晶性についてＸ線回折装置を
用いて調べたところ、強誘電性を示すペロブスカイト型
結晶の単相膜であることがわかった。When the crystallinity of the PT thin film was examined using an X-ray diffractometer, it was found that the PT thin film was a single-phase film of a perovskite crystal showing ferroelectricity.
第３実施例 酢酸鉛8.63gと酢酸ランタン0.71gとを２−メトキシエ
タノールに溶解し、溶媒との共沸混合物として水を除去
した後、テトライソプロポキシチタン2.43gとテトラブ
トキシジルコニウム6.09gを加え、さらにアセチルアセ
トン（安定化剤）6.83gを加えた。Third Example After dissolving 8.63 g of lead acetate and 0.71 g of lanthanum acetate in 2-methoxyethanol and removing water as an azeotropic mixture with a solvent, 2.43 g of tetraisopropoxytitanium and 6.09 g of tetrabutoxyzirconium were added. Then, 6.83 g of acetylacetone (stabilizer) was added.
この混合溶液を充分に撹拌した後に、イソプロピルア
ルコールと水1.23gを加え、全体で80.85gとし、酸化物
換算で10％濃度の強誘電体薄膜形成前駆体溶液を作成し
た。After sufficiently stirring this mixed solution, isopropyl alcohol and 1.23 g of water were added to make a total of 80.85 g, thereby preparing a precursor solution for forming a ferroelectric thin film having a concentration of 10% in terms of oxide.
この前駆体溶液を、スピンコーターを用いて3,000rpm
の条件で白金基板上に塗布した後、この塗膜を乾燥す
る。Using a spin coater, this precursor solution is 3,000 rpm
After coating on a platinum substrate under the conditions described above, this coating film is dried.
この塗布、乾燥の操作を６回繰り返してから、600℃
で１時間焼成してPLZT（9/65/35）の薄膜を得た。After repeating this coating and drying operation six times,
For 1 hour to obtain a PLZT (9/65/35) thin film.
そして、このPLZT薄膜の結晶性についてＸ線回折装置
を用いて調べたところ、強誘電性を示すペロブスカイト
型結晶の単相膜であることがわかった。When the crystallinity of the PLZT thin film was examined using an X-ray diffractometer, it was found that the PLZT thin film was a perovskite crystal single-phase film exhibiting ferroelectricity.
比較例 上記第１実施例におけるアセチルアセトンを加える工
程と、水を加える工程とを除き、上記実施例と同様に各
成分を混合した後、その混合溶液を10時間沸点直下の温
度で加熱還流して反応させて、酸化物換算で10％溶液を
得た。Comparative Example After the components were mixed in the same manner as in the above Example, except that the step of adding acetylacetone and the step of adding water in the first example were performed, the mixed solution was heated and refluxed at a temperature just below the boiling point for 10 hours. The reaction was performed to obtain a 10% solution in terms of oxide.
この溶液を使用して上記第１実施例と同様にしてPZT
薄膜を得た。基板への塗布、乾燥を繰り返すものであ
る。Using this solution, PZT
A thin film was obtained. Coating on a substrate and drying are repeated.
このPZT薄膜の結晶性についてＸ線回折装置を用いて
調べたところ、強誘電性を示すペロブスカイト型構造の
結晶と、常誘電性を示すパイロクロア型構造の結晶との
混晶膜であることがわかった。Examination of the crystallinity of this PZT thin film using an X-ray diffractometer revealed that it was a mixed crystal film of a perovskite-type crystal exhibiting ferroelectricity and a pyrochlore-type crystal exhibiting paraelectricity. Was.
〈効果〉 本発明に係る強誘電体薄膜の製造方法および強誘電体
薄膜形成前駆体溶液の製造方法にあっては、焼成時にお
いても鉛等の成分元素または化合物が揮発することなく
均質な強誘電体薄膜を得ることができる。また、容易に
強誘電相であるペロブスカイト型結晶へ転移させること
ができる。<Effects> In the method for producing a ferroelectric thin film and the method for producing a precursor solution for forming a ferroelectric thin film according to the present invention, a homogeneous ferroelectric thin film is obtained without volatilization of component elements or compounds such as lead even during firing. A dielectric thin film can be obtained. Further, it can be easily transformed into a perovskite crystal which is a ferroelectric phase.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 内田 寛人 東京都千代田区大手町１丁目６番１号 三菱金属株式会社内 (56)参考文献 特開 平２−6335（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Hiroto Uchida 1-6-1, Otemachi, Chiyoda-ku, Tokyo Mitsubishi Metals Corporation (56) References JP-A-2-6335 (JP, A)
Claims (3)
属有機化合物を有機溶媒に溶解することにより、これら
の金属のそれぞれについて酸素を介して有機基と結合し
た金属化合物の混合溶液を形成し、 この混合溶液に安定化剤を添加した後、 この混合溶液に所定量の水を加え、部分加水分解させ、
混合溶液中に金属−酸素−金属結合を形成することによ
り、 チタン酸鉛（PT）、チタン酸ジルコン酸鉛（PZT）、第
３成分添加チタン酸ジルコン酸鉛（３成分系PZT）、お
よび、ランタン添加チタン酸ジルコン酸鉛（PLZT）から
なる群から選択される１種の強誘電体薄膜を形成するた
めの強誘電体薄膜形成前駆体溶液を作製する強誘電体薄
膜形成前駆体溶液の製造方法であって、 上記安定化剤の添加量は、総金属原子数1molに対して0.
2〜3mol、上記水の添加量は、総金属原子数1molに対し
て0.2〜3molであることを特徴とする強誘電体薄膜形成
前駆体溶液の製造方法。(1) dissolving a metal organic compound of lead, lanthanum, titanium, and zirconium in an organic solvent to form a mixed solution of a metal compound bonded to an organic group via oxygen for each of these metals; After adding a stabilizer to the mixed solution, a predetermined amount of water is added to the mixed solution to cause partial hydrolysis,
By forming metal-oxygen-metal bonds in the mixed solution, lead titanate (PT), lead zirconate titanate (PZT), third component-added lead zirconate titanate (ternary PZT), and Manufacture of a ferroelectric thin film forming precursor solution for forming one type of ferroelectric thin film selected from the group consisting of lanthanum-added lead zirconate titanate (PLZT) In the method, the amount of the stabilizer added is 0.
A method for producing a precursor solution for forming a ferroelectric thin film, wherein the addition amount of water is 2 to 3 mol and the addition amount of water is 0.2 to 3 mol based on 1 mol of total metal atoms.
酸類、ケトエステル類、オキシ酸類、高級カルボン酸
類、アミン類からなる群の内から選択される１種である
請求項（１）に記載の強誘電体薄膜形成前駆体溶液の製
造方法。2. The method according to claim 1, wherein the stabilizer is one selected from the group consisting of β-diketones, ketone acids, keto esters, oxy acids, higher carboxylic acids, and amines. The method for producing a precursor solution for forming a ferroelectric thin film according to the above.
誘電体薄膜形成前駆体溶液を基板上に塗布し、乾燥、熱
分解を行い酸化膜を形成した後、 この酸化膜を適当な温度で焼成することにより、 チタン酸鉛（PT）、チタン酸ジルコン酸鉛（PZT）、第
３成分添加チタン酸ジルコン酸鉛（３成分系PZT）、お
よび、ランタン添加チタン酸ジルコン酸鉛（PLZT）から
なる群から選択される１種の強誘電体薄膜を形成したこ
とを特徴とする強誘電体薄膜の製造方法。3. A ferroelectric thin film forming precursor solution according to claim 1 or 2 is coated on a substrate, dried and thermally decomposed to form an oxide film. By firing at an appropriate temperature, lead titanate (PT), lead zirconate titanate (PZT), lead zirconate titanate with a third component (ternary PZT), and lead zirconate titanate with lanthanum A method for producing a ferroelectric thin film, wherein one type of ferroelectric thin film selected from the group consisting of (PLZT) is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2121755A JP3026310B2 (en) | 1990-05-11 | 1990-05-11 | Method for producing precursor solution for forming ferroelectric thin film and method for producing ferroelectric thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2121755A JP3026310B2 (en) | 1990-05-11 | 1990-05-11 | Method for producing precursor solution for forming ferroelectric thin film and method for producing ferroelectric thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0419911A JPH0419911A (en) | 1992-01-23 |
| JP3026310B2 true JP3026310B2 (en) | 2000-03-27 |
Family
ID=14819087
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2121755A Expired - Lifetime JP3026310B2 (en) | 1990-05-11 | 1990-05-11 | Method for producing precursor solution for forming ferroelectric thin film and method for producing ferroelectric thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3026310B2 (en) |
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|---|---|---|---|---|
| US5679937A (en) * | 1994-08-22 | 1997-10-21 | Toyodenso Kabushiki Kaisha | Switching device |
| US6001416A (en) * | 1994-11-24 | 1999-12-14 | Fuji Xerox Co., Ltd. | Oxide thin film and process for forming the same |
| US6203608B1 (en) | 1998-04-15 | 2001-03-20 | Ramtron International Corporation | Ferroelectric thin films and solutions: compositions |
| JP4578744B2 (en) * | 2001-10-26 | 2010-11-10 | パナソニック株式会社 | Ferroelectric element, actuator using the same, ink jet head, and ink jet recording apparatus |
| CN114892341A (en) * | 2022-05-10 | 2022-08-12 | 陕西科技大学 | Aromatic heterocyclic nanofiber film based on acid cracking and preparation method thereof |
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1990
- 1990-05-11 JP JP2121755A patent/JP3026310B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JPH0419911A (en) | 1992-01-23 |
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