JP2891234B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2891234B2 JP2891234B2 JP9109293A JP10929397A JP2891234B2 JP 2891234 B2 JP2891234 B2 JP 2891234B2 JP 9109293 A JP9109293 A JP 9109293A JP 10929397 A JP10929397 A JP 10929397A JP 2891234 B2 JP2891234 B2 JP 2891234B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resin film
- insulating resin
- terminating resistor
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
Landscapes
- Wire Bonding (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置に関し、
特に高周波用信号を扱う半導体装置に関する。The present invention relates to a semiconductor device,
In particular, the present invention relates to a semiconductor device that handles high frequency signals.
【０００２】[0002]
【従来の技術】近年、半導体装置の高速化に伴い、半導
体装置を搭載するパッケージ（ＰＫＧ）自体の構造、あ
るいはパッケージを実装する際の問題が重要視されてい
る。特に、高周波信号を扱う場合には、実装した装置の
各接続部における信号の反射、伝送波形の劣化、あるい
は振幅の減衰などが無視できなくなるからである。2. Description of the Related Art In recent years, as the speed of semiconductor devices has increased, the structure of the package (PKG) itself on which the semiconductor device is mounted, or the problem of mounting the package, has been emphasized. In particular, when handling high-frequency signals, signal reflection, transmission waveform deterioration, amplitude attenuation, and the like at each connection of the mounted device cannot be ignored.
【０００３】このため、例えば入力信号の接続部におけ
る反射を防止するために、信号ラインの特性インピーダ
ンスとマッチングを取った終端抵抗（通常、５０オー
ム）を設けることが行われている。For this reason, for example, in order to prevent reflection at a connection portion of an input signal, a terminating resistor (usually 50 ohm) matched with the characteristic impedance of a signal line is provided.
【０００４】図２は従来の一例を説明するための半導体
ＰＫＧの等価回路図である。図２に示すように、従来の
半導体ＰＫＧ８は、外部入力端子９を備え、上述した終
端抵抗４ａを実装基板側、すなわち半導体ＰＫＧ８の外
部に取り付け、インピーダンスのマッチングを取るよう
にしている。FIG. 2 is an equivalent circuit diagram of a semiconductor PKG for explaining an example of the related art. As shown in FIG. 2, the conventional semiconductor PKG 8 has an external input terminal 9, and the above-described terminating resistor 4a is mounted on the mounting substrate side, that is, outside the semiconductor PKG 8, so that impedance matching is performed.
【０００５】図３は従来の他の例を説明するための半導
体ＰＫの等価回路図である。図３に示すように、別の終
端抵抗の取り方としては、フィードスルーと呼ばれる方
式もある。この方式は、半導体ペレット３を備えたＰＫ
Ｇ８の外部入力端子９Ａからの信号配線を半導体ペレッ
ト３の外部で分岐させ、ＰＫＧ８の他の端子部９Ｂに引
き出し、ＰＫＧ８の外部に終端抵抗４ａを設けるという
ものである。FIG. 3 is an equivalent circuit diagram of a semiconductor PK for explaining another conventional example. As shown in FIG. 3, another method of obtaining a terminating resistor is a method called feedthrough. This method uses a PK with a semiconductor pellet 3
The signal wiring from the external input terminal 9A of G8 is branched outside the semiconductor pellet 3 and led out to another terminal 9B of the PKG 8, and a terminating resistor 4a is provided outside the PKG 8.
【０００６】これらの他に、終端抵抗を設ける半導体装
置は、例えば特開平５−２０６２０２号公報などでも知
られている。In addition to these, a semiconductor device provided with a terminating resistor is also known, for example, from Japanese Patent Application Laid-Open No. 5-206202.
【０００７】図４（ａ），（ｂ）はそれぞれかかる従来
のまた別の一例を説明するための半導体装置の平面図お
よびそのＡ−Ａ’線断面図である。図４（ａ），（ｂ）
に示すように、従来の半導体装置としては、中央に開孔
部６を形成した絶縁樹脂フィルム１と、この絶縁樹脂フ
ィルム１の一方の面（ここでは、下の面）に配列して設
けるとともに、先端を開孔部６の内部に突出させた金属
リード１０と、開孔部６内に位置させ、バンプ１２を介
して金属リード１０の先端と接続させる半導体ペレット
３と、フィルム１の他方の面（ここでは、上の面）に設
けるとともに、フィルム１に形成したスルーホール１１
を介して金属リード１０の途中に接続する終端抵抗４ａ
とから構成されている。この例は、要するにパッケージ
内部に終端抵抗を取り込んだものである。FIGS. 4A and 4B are a plan view and a cross-sectional view taken along the line AA 'of the semiconductor device, respectively, for explaining another conventional example. FIG. 4 (a), (b)
As shown in FIG. 1, as a conventional semiconductor device, an insulating resin film 1 having an opening 6 formed in the center and an insulating resin film 1 provided on one surface (here, a lower surface) of the insulating resin film 1 are provided. A metal lead 10 having a tip protruding into the opening 6, a semiconductor pellet 3 positioned in the opening 6 and connected to the tip of the metal lead 10 via the bump 12, and the other of the film 1. Surface (here, the upper surface) and the through holes 11 formed in the film 1.
Terminating resistor 4a connected in the middle of metal lead 10 through
It is composed of In this example, a terminating resistor is incorporated in the package.
【０００８】[0008]
【発明が解決しようとする課題】上述した従来の図２に
示す半導体装置は、終端抵抗を実装基板側すなわちパッ
ケージの外部に取り付けることにより、インピーダンス
のマッチングを取るようにしているが、この手法ではパ
ッケージの内部に信号ラインやボンディングワイヤが存
在するため、終端抵抗は入力信号ラインの完全な終端部
に位置していない。このため、高速の入力信号に対して
は、波形の劣化などを生ずるという欠点がある。In the above-described conventional semiconductor device shown in FIG. 2, impedance matching is achieved by attaching a terminating resistor to the mounting substrate side, that is, outside the package. Due to the presence of signal lines and bonding wires inside the package, the terminating resistor is not located at the complete end of the input signal line. For this reason, there is a disadvantage that the waveform is deteriorated for a high-speed input signal.
【０００９】また、従来の図３に示す半導体装置は、図
２に比べて終端抵抗がほぼ入力信号の終端部に位置する
ことになるが、パッケージ内の信号入力配線数が２倍に
なる。したがって、入力端子数が増加し、ボンディング
パッドの高密度化を必要とするため、パッケージ内部の
配線が非常に困難になるという欠点がある。Further, in the conventional semiconductor device shown in FIG. 3, the terminating resistor is located almost at the end of the input signal as compared with FIG. 2, but the number of signal input wirings in the package is doubled. Therefore, the number of input terminals increases, and the density of the bonding pads needs to be increased, so that there is a disadvantage that wiring inside the package becomes extremely difficult.
【００１０】さらに、従来の図４に示す半導体装置は、
ＴＡＢテープを用いて終端抵抗をパッケージ内部に取り
込んでいる。しかし、このＴＡＢテープは、片面側に終
端抵抗を形成し、反対側の面に外部端子との接続のため
の金属リードを形成するとともに、その両側をスルーホ
ールで接続することにより実現しているが、ＴＡＢテー
プの製造工程が複雑になり、加工が困難になるという欠
点がある。特に、その分コストが上昇してしまうという
問題がある。Further, the conventional semiconductor device shown in FIG.
Terminating resistors are incorporated into the package using a TAB tape. However, this TAB tape is realized by forming a terminating resistor on one side, forming metal leads for connection to external terminals on the opposite side, and connecting both sides of the TAB tape with through holes. However, there is a drawback that the manufacturing process of the TAB tape becomes complicated and processing becomes difficult. In particular, there is a problem that the cost increases accordingly.
【００１１】本発明の目的は、高周波信号を扱う半導体
装置において、信号線の接続部における反射を防止し、
伝送波形の劣化や振幅の減衰を防ぐとともに、パッケー
ジ内配線を簡略化し、ＴＡＢテープの製造を容易にする
ことのできる半導体装置を提供することにある。An object of the present invention is to prevent reflection at a connection portion of a signal line in a semiconductor device handling a high-frequency signal,
It is an object of the present invention to provide a semiconductor device capable of preventing transmission waveform deterioration and amplitude attenuation, simplifying wiring in a package, and facilitating the manufacture of a TAB tape.
【００１２】[0012]
【課題を解決するための手段】本発明の半導体装置は、
開孔部を形成した絶縁樹脂フィルム１と、前記開孔部内
に位置させるとともに、周辺に接続端子を形成した半導
体ペレットと、前記絶縁樹脂フィルムの上面に直接被着
して配列させ且つ一端を前記開孔部の内部まで突出させ
た終端抵抗用の抵抗層とを有し、前記開孔部内に位置す
る前記終端抵抗用の抵抗層の先端を前記接続端子に接続
すると共に、外部信号線用のボンディングワイヤを前記
接続端子に接続して構成される。According to the present invention, there is provided a semiconductor device comprising:
An insulating resin film 1 having an opening formed therein, a semiconductor pellet having a connection terminal formed in the periphery while being positioned in the opening, and a semiconductor pellet directly attached to and arranged on the upper surface of the insulating resin film, and one end thereof being A resistance layer for a terminating resistor protruding to the inside of the opening, and connecting the tip of the resistance layer for the terminating resistor located in the opening to the connection terminal, and for an external signal line. It is configured by connecting a bonding wire to the connection terminal.
【００１３】また、本発明の半導体装置における終端抵
抗用の抵抗層は、ＴＡＢテープ上に単層構造で形成され
る。The resistance layer for the terminating resistor in the semiconductor device of the present invention is formed in a single layer structure on a TAB tape.
【００１４】さらに、本発明の半導体装置における半導
体ペレットおよび絶縁樹脂フィルムは、前記半導体ペレ
ットの４隅の一部および前記絶縁樹脂フィルムにまたが
る補強部材で補強して形成される。Further, the semiconductor pellet and the insulating resin film in the semiconductor device of the present invention are formed by reinforcing with a reinforcing member extending over a part of four corners of the semiconductor pellet and the insulating resin film.
【００１５】[0015]
【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。Next, embodiments of the present invention will be described with reference to the drawings.
【００１６】図１（ａ），（ｂ）はそれぞれ本発明の一
実施の形態を説明するための半導体装置の平面図および
そのＡ−Ａ’線断面図である。図１（ａ），（ｂ）に示
すように、本実施の形態の半導体装置は、中央部に開孔
部６を形成したポリイミドあるいはガラスエポキシなど
からなる絶縁樹脂フィルム１と、開孔部６内に位置させ
るとともに、周辺に接続端子２を形成した半導体ペレッ
ト３と、絶縁樹脂フィルム１の上面に直接被着して配列
させ且つ一端を開孔部６の内部まで突出させた終端抵抗
用の抵抗層４と、半導体ペレット３の４隅の一部および
絶縁樹脂フィルム１にまたがる補強部材７とを有してい
る。また、この開孔部６内に位置する終端抵抗用の抵抗
層４の先端は半導体ペレット３の接続端子２に接続する
と共に、外部信号線用のボンディングワイヤ５を接続端
子２に接続している。FIGS. 1A and 1B are a plan view and a cross-sectional view taken along the line AA 'of a semiconductor device, respectively, for explaining an embodiment of the present invention. As shown in FIGS. 1A and 1B, a semiconductor device according to the present embodiment includes an insulating resin film 1 made of polyimide or glass epoxy having an opening 6 formed in the center, and an opening 6. And a semiconductor pellet 3 having connection terminals 2 formed therearound, and a terminal resistor for a terminal resistor which is directly attached to and arranged on the upper surface of the insulating resin film 1 and has one end protruding into the opening 6. It has a resistance layer 4 and a reinforcing member 7 extending over a part of four corners of the semiconductor pellet 3 and the insulating resin film 1. The tip of the resistor layer 4 for the terminating resistor located in the opening 6 is connected to the connection terminal 2 of the semiconductor pellet 3 and the bonding wire 5 for the external signal line is connected to the connection terminal 2. .
【００１７】ここで、終端抵抗用の抵抗層４は金属材か
らなる薄膜又は厚膜でＴＡＢテープ上に単層構造で形成
され、伝送路の特性インピーダンスとマッチングさせて
おり、その抵抗層４の他端は終端電圧が供給されてい
る。Here, the resistor layer 4 for the terminating resistor is a thin film or a thick film made of a metal material, is formed in a single layer structure on a TAB tape, and is matched with the characteristic impedance of the transmission line. The other end is supplied with a termination voltage.
【００１８】また、補強部材７は、ボンディングワイヤ
５の接続に先立って、半導体ペレット３の４隅の一部と
絶縁樹脂フィルム１との間に接着され、その材質は絶縁
樹脂フィルム１と同一の材質で形成される。この補強部
材７は、半導体ペレット３の保持と、抵抗層４のずれ防
止との役目を果しているが、半導体ペレット３の保持が
抵抗層４のみで十分な場合には、半導体ペレット３の４
隅にかからないように、すなわち四角形状の補強部材と
することなく、絶縁樹脂フィルム１上のみにＬ型形状の
補強材として形成することができる。The reinforcing member 7 is bonded between a part of the four corners of the semiconductor pellet 3 and the insulating resin film 1 prior to the connection of the bonding wire 5, and is made of the same material as the insulating resin film 1. It is formed of a material. The reinforcing member 7 serves to hold the semiconductor pellet 3 and to prevent the displacement of the resistance layer 4. However, when the holding of the semiconductor pellet 3 is sufficient only with the resistance layer 4, the semiconductor pellet 3 4
It can be formed as an L-shaped reinforcing material only on the insulating resin film 1 so as not to cover a corner, that is, without forming a rectangular reinforcing member.
【００１９】さらに、外部信号線用のボンディングワイ
ヤ５は、前述したように、半導体ペレット３の接続端子
２と終端抵抗用の抵抗層４の先端とが接続されている部
分の上部にボンディング接続される。Further, as described above, the bonding wire 5 for the external signal line is bonded to the upper part of the portion where the connection terminal 2 of the semiconductor pellet 3 and the tip of the resistor layer 4 for the terminating resistor are connected. You.
【００２０】上述したように、本実施の形態によれば、
ＴＡＢテープ上に終端抵抗を形成することにより、素子
に近接した位置で終端を取ることができるので、高速入
力信号の波形歪みを十分に小さくすることができる。ま
た、外部信号線側には、ボンディングワイヤを用いるこ
とにより、ＴＡＢテープ自体は単面構成にできるので、
ボンディングの工程が追加になっても、２層構造のＴＡ
Ｂテープを用いた場合と比較して、コスト的に低く抑え
ることができる。As described above, according to the present embodiment,
By forming the terminating resistor on the TAB tape, it is possible to terminate at a position close to the element, so that the waveform distortion of the high-speed input signal can be sufficiently reduced. Also, by using a bonding wire on the external signal line side, the TAB tape itself can have a single-sided configuration,
Even if the bonding process is added, a two-layered TA
As compared with the case where the B tape is used, the cost can be reduced.
【００２１】[0021]
【発明の効果】以上説明したように、本発明の半導体装
置は、絶縁樹脂フィルムの開孔部内に接続端子を形成し
た半導体ペレットを位置させ、フィルムの上面に終端抵
抗用の抵抗層を直接被着して配列させるとともに、先端
を開孔部の内部まで突出させ且つ抵抗層の先端と接続端
子を接続すると共に、外部信号線用のボンディングワイ
ヤを接続端子に接続することにより、信号線の接続部に
おける反射を防止し、伝送波形の劣化や振幅の減衰を防
ぐとともに、パッケージ内配線を簡略化し、ＴＡＢテー
プの製造を容易にすることができるという効果がある。As described above, in the semiconductor device of the present invention, the semiconductor pellet having the connection terminals formed therein is located in the opening of the insulating resin film, and the resistance layer for the terminating resistor is directly covered on the upper surface of the film. The connection of the signal lines is performed by connecting and connecting the connection terminals with the ends of the resistive layer and connecting the connection terminals to the ends of the resistive layer, and connecting the connection wires to the connection terminals. In addition to preventing reflection at the section, deterioration of transmission waveforms and attenuation of amplitude are prevented, wiring within the package is simplified, and the TAB tape can be easily manufactured.
【００２２】特に、反射の影響を受けがたい終端抵抗を
単層のＴＡＢテープを用いて形成し、また外部との接続
は通常のワイヤボンディング方式を用いることにより、
抵コストで半導体装置をパッケージ内に納めることが可
能になる。In particular, by using a single-layer TAB tape to form a terminating resistor that is not easily affected by reflection, and to connect to the outside by using a normal wire bonding method,
The semiconductor device can be housed in the package at low cost.
【図１】本発明の一実施の形態を説明するための半導体
装置の平面およびＡ−Ａ’線断面を表わす図である。FIG. 1 is a diagram illustrating a plane and a cross section taken along line AA ′ of a semiconductor device for describing an embodiment of the present invention;
【図２】従来の一例を説明するための半導体ＰＫＧの等
価回路図である。FIG. 2 is an equivalent circuit diagram of a semiconductor PKG for explaining an example of the related art.
【図３】従来の他の例を説明するための半導体ＰＫＧの
等価回路図である。FIG. 3 is an equivalent circuit diagram of a semiconductor PKG for explaining another conventional example.
【図４】従来のまた別の一例を説明するための半導体装
置の平面およびＡ−Ａ’線断面を表わす図である。FIG. 4 is a diagram showing a plane and a cross section taken along line AA ′ of a semiconductor device for explaining another conventional example.
１ 絶縁樹脂フィルム ２ 接続端子 ３ 半導体ペレット ４ 終端抵抗層 ５ ボンディングワイヤ ６ 開孔部 ７ 補強部材 DESCRIPTION OF SYMBOLS 1 Insulating resin film 2 Connection terminal 3 Semiconductor pellet 4 Termination resistance layer 5 Bonding wire 6 Opening part 7 Reinforcement member
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/60 311 H01L 21/60 301 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/60 311 H01L 21/60 301
Claims (3)
前記開孔部内に位置させるとともに、周辺に接続端子を
形成した半導体ペレットと、前記絶縁樹脂フィルムの上
面に直接被着して配列させ且つ一端を前記開孔部の内部
まで突出させた終端抵抗用の抵抗層とを有し、前記開孔
部内に位置する前記終端抵抗用の抵抗層の先端を前記接
続端子に接続すると共に、外部信号線用のボンディング
ワイヤを前記接続端子に接続したことを特徴とする半導
体装置。An insulating resin film having an opening formed therein,
A semiconductor pellet having a connection terminal formed in the periphery while being located in the opening, and a terminating resistor having one end protruding into the opening and being directly attached and arranged on the upper surface of the insulating resin film. And a tip of the resistor layer for the terminating resistor located in the opening is connected to the connection terminal, and a bonding wire for an external signal line is connected to the connection terminal. Semiconductor device.
プ上に単層構造で形成される請求項１記載の半導体装
置。2. The semiconductor device according to claim 1, wherein the resistance layer for the terminating resistor is formed in a single-layer structure on a TAB tape.
フィルムは、前記半導体ペレットの４隅の一部および前
記絶縁樹脂フィルムにまたがる補強部材で補強した請求
項１記載の半導体装置。3. The semiconductor device according to claim 1, wherein the semiconductor pellet and the insulating resin film are reinforced by a reinforcing member extending over a part of four corners of the semiconductor pellet and the insulating resin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9109293A JP2891234B2 (en) | 1997-04-25 | 1997-04-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9109293A JP2891234B2 (en) | 1997-04-25 | 1997-04-25 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10303247A JPH10303247A (en) | 1998-11-13 |
| JP2891234B2 true JP2891234B2 (en) | 1999-05-17 |
Family
ID=14506511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9109293A Expired - Lifetime JP2891234B2 (en) | 1997-04-25 | 1997-04-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2891234B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4760509B2 (en) * | 2006-04-21 | 2011-08-31 | サンケン電気株式会社 | Lead frame assembly |
-
1997
- 1997-04-25 JP JP9109293A patent/JP2891234B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10303247A (en) | 1998-11-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990126 |