JP2795063B2 - Hybrid integrated circuit device - Google Patents
Hybrid integrated circuit deviceInfo
- Publication number
- JP2795063B2 JP2795063B2 JP15017692A JP15017692A JP2795063B2 JP 2795063 B2 JP2795063 B2 JP 2795063B2 JP 15017692 A JP15017692 A JP 15017692A JP 15017692 A JP15017692 A JP 15017692A JP 2795063 B2 JP2795063 B2 JP 2795063B2
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- hybrid integrated
- circuit device
- metal case
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Description
【０００１】[0001]
【産業上の利用分野】本発明は混成集積回路装置に関
し、特に内部消費電力が大きく高発熱を伴う半導体素子
を搭載する場合の混成集積回路装置の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device, and more particularly to a structure of a hybrid integrated circuit device in which a semiconductor element having a large internal power consumption and high heat generation is mounted.
【０００２】[0002]
【従来の技術】従来、混成集積回路装置においては、内
部消費電力の大きい、従って自己発熱量の高い半導体素
子を搭載する場合には、大きく分類して以下の２通りの
方法が用いられる。第１の方法は、基板材料として金属
材料を使用する方法で、図３（ａ），（ｂ），（ｃ）に
一例を示した。図３において、配線基板のベース材料と
してアルミニウム、銅、鉄等の熱伝導率の高い金属基板
２３が用いられ、金属基板表面に絶縁層２１を兼用する
例えばエポキシ系接着剤を塗布した後でその絶縁層２１
上に、銅の薄板及びアルミニウムの薄板を圧着した構造
となっている。ここで、アルミニウムの薄板はワイヤボ
ンディング接続の安定性のために必要である。次に不要
な銅及びアルミニウムの領域をエッチング処理により除
去して、導体配線パターン３を形成することにより配線
基板を作成している。従って、この配線基板上に半導体
素子等の部品を搭載することにより、熱放散性の高い混
成集積回路装置が実現されることになる。2. Description of the Related Art Conventionally, in a hybrid integrated circuit device, when a semiconductor element having a large internal power consumption and, therefore, a high self-heating value is mounted, the following two methods are roughly classified and used. The first method is to use a metal material as a substrate material, and an example is shown in FIGS. 3 (a), 3 (b) and 3 (c). In FIG. 3, a metal substrate 23 having high thermal conductivity, such as aluminum, copper, or iron, is used as a base material of a wiring substrate, and an epoxy-based adhesive that also serves as the insulating layer 21 is applied to the surface of the metal substrate, and then applied. Insulating layer 21
It has a structure in which a copper thin plate and an aluminum thin plate are crimped thereon. Here, a thin aluminum plate is necessary for the stability of the wire bonding connection. Next, unnecessary copper and aluminum regions are removed by etching, and a conductive wiring pattern 3 is formed to form a wiring board. Therefore, by mounting components such as semiconductor elements on the wiring board, a hybrid integrated circuit device having high heat dissipation can be realized.
【０００３】しかしながら、この方法では放熱効果は高
いが、２層の金属薄板のエッチングにより導体配線パタ
ーン３を形成することからパターン精度が悪くなり、微
細な配線を得ることが困難なこと、また接着剤を絶縁層
とすることから多層化のための平坦性が得られにくいた
め、従って高密度化は不可能であった。However, although this method has a high heat radiation effect, the pattern accuracy is deteriorated because the conductor wiring pattern 3 is formed by etching a two-layer metal thin plate, and it is difficult to obtain fine wiring. Since the agent is used as an insulating layer, it is difficult to obtain flatness for multi-layering, so that it has been impossible to increase the density.
【０００４】第２の方法は、図４（ａ），（ｂ）に示す
ように外部への熱放散を考慮した放熱フィン２５等の金
属加工物上に、自己発熱量の高い半導体素子８と、セラ
ミック基板２８上に導体配線パターン３を形成した配線
基板２６を別々に搭載した後で、ボンディングワイヤ９
等で相互に電気的接続を行い、混成集積回路装置を実現
する方法である。In a second method, as shown in FIGS. 4 (a) and 4 (b), a semiconductor element 8 having a high self-heating value is placed on a metal workpiece such as a radiation fin 25 in consideration of heat dissipation to the outside. After separately mounting the wiring substrates 26 each having the conductor wiring pattern 3 formed on the ceramic substrate 28, the bonding wires 9 are formed.
This is a method for realizing a hybrid integrated circuit device by mutually making electrical connections with each other.
【０００５】[0005]
【発明が解決しようとする課題】ところが、これらの従
来の混成集積回路装置においては、どちらの方法につい
ても金属材料上に配線基板部を搭載していることには変
わらず、従って、金属材料を端面部に高精度に絶縁層及
び導体配線層を形成し、配線基板部と接続して外部リー
ド端子部とする加工が困難なため、高発熱を伴なうＬＣ
Ｃパッケージ等の表面実装形状の製品化が不可能という
問題があった。However, in these conventional hybrid integrated circuit devices, the wiring board portion is mounted on a metal material in any of the methods. Therefore, the metal material is not used. Since it is difficult to form an insulating layer and a conductor wiring layer on the end face with high precision and connect them to the wiring board to form external lead terminals, LC with high heat generation is required.
There is a problem that it is impossible to commercialize a surface mount shape such as a C package.
【０００６】[0006]
【課題を解決するための手段】本発明の混成集積回路装
置は、アルミニウム、銅、鉄等の熱伝導率の高い金属材
料を用いて形成した凹形状を有する金属ケースを配線基
板上の貫通孔に挿入して、この金属ケース内に自己発熱
量の高い半導体素子を搭載し、配線基板上の導体配線部
との間で電気的に接続を行った構造となっている。According to the hybrid integrated circuit device of the present invention, a metal case having a concave shape formed by using a metal material having high thermal conductivity such as aluminum, copper, iron or the like is provided with a through hole on a wiring board. And a semiconductor element having a high self-heating value is mounted in the metal case, and is electrically connected to the conductor wiring portion on the wiring board.
【０００７】[0007]
【実施例】次に、本発明について図面を参照して説明す
る。図１（ａ）は、本発明の第１の実施例の混成集積回
路の外観図であり、（ｂ）は、本実施例に用いた金属ケ
ースの外観図、（ｃ）は、本実施例の縦断面図である。
本実施例においては、配線基板として、混成集積回路装
置の形状をＬＣＣパッケージ構造とするため、安価で加
工性の良いガラスエポキシ等の絶縁基板１を用いて、表
面上に導体配線パターン３及び基板の端面部にスルーホ
ール加工を行い、導体メッキ処理等を施して導体配線部
と接続を行い端面リード４とした構造となっている。Next, the present invention will be described with reference to the drawings. 1A is an external view of a hybrid integrated circuit according to a first embodiment of the present invention, FIG. 1B is an external view of a metal case used in the present embodiment, and FIG. FIG.
In this embodiment, since the hybrid integrated circuit device has an LCC package structure as the wiring substrate, an insulating substrate 1 made of glass epoxy or the like, which is inexpensive and has good workability, is used. Through hole processing is performed on the end surface of the substrate, and a conductor plating process or the like is performed to connect to the conductor wiring portion to form an end surface lead 4.
【０００８】本実施例の製造方法としては、この配線基
板上、高発熱する半導体素子８の搭載位置に貫通孔１１
を設けておき、まず貫通孔１１に高さが配線基板厚み以
内の金属ケース２を嵌合し固定する。この場合金属ケー
ス２を凹形状とすることにより金属ケースのハンドリン
グが容易となり、かつ基板壁面との接触面積が大きくな
るため嵌合力が強くなり位置が安定する効果がある。次
に、他の半導体素子の配線基板への搭載と同様、同時工
程で半導体素子８を搭載する。次に、半導体素子８と配
線基板間とはボンディングワイヤ９により電気的接続が
行なわれ、ボンディングワイヤ９等の保護のために封止
樹脂６により封止する。In the manufacturing method of the present embodiment, a through hole 11
First, the metal case 2 whose height is within the thickness of the wiring board is fitted and fixed in the through hole 11. In this case, by making the metal case 2 concave, the handling of the metal case becomes easy, and the contact area with the substrate wall surface is increased, so that the fitting force is increased and the position is stabilized. Next, the semiconductor element 8 is mounted in the same step as the other semiconductor elements are mounted on the wiring board. Next, an electrical connection is made between the semiconductor element 8 and the wiring board by a bonding wire 9, and the semiconductor element 8 is sealed with a sealing resin 6 to protect the bonding wire 9 and the like.
【０００９】本実施例では、混成集積回路装置の上面部
には金属ケースの露出はないが、下面部には露出してい
る構造としている。つまり、例えば、配線基板として、
ガラスエポキシ材料を使用した場合には、熱伝導率が
０．３ｋｃａｌ／ｍ・ｈ・°Ｃ程度であるが、金属ケー
スとしてアルミニウム材料を用いると、部分的に１７０
ｋｃａｌ／ｍ・ｈ・°Ｃ程度の熱伝導率とすることが可
能となり、配線基板や他の搭載部品にも損傷を与えるこ
となく、金属ケース露出部から半導体素子の自己発熱エ
ネルギーを外部に逃がすことができる。In this embodiment, the metal case is not exposed on the upper surface of the hybrid integrated circuit device, but is exposed on the lower surface. That is, for example, as a wiring board,
When a glass epoxy material is used, the thermal conductivity is about 0.3 kcal / m · h · ° C.
It is possible to have a thermal conductivity of about kcal / m · h · ° C., and the self-heating energy of the semiconductor element is released from the exposed portion of the metal case to the outside without damaging the wiring board and other mounted components. be able to.
【００１０】従って、本実施例を用いた混成集積回路装
置をマザーボード上に搭載使用する場合には、本装置下
面の金属ケース露出部位置に対応するマザーボード上
に、熱放散を行うための大面積導体パターン部あるいは
放熱板を設置しておくことにより、本装置で発生する熱
エネルギーを速やかに放散することが可能となる。Therefore, when the hybrid integrated circuit device using this embodiment is mounted on a motherboard and used, a large area for dissipating heat is provided on the motherboard corresponding to the position of the exposed metal case on the lower surface of the device. By providing the conductor pattern portion or the heat radiating plate, it becomes possible to quickly dissipate the heat energy generated by the present device.
【００１１】図２（ａ）は、本発明の第２の実施例に用
いた金属ケースの外観図、（ｂ）は、本実施例の縦断面
図である。本実施例は、金属ケース２として凹形状の突
出部を配線基板厚みより長くし、半導体素子８と導体配
線パターン３を接続するボンディングワイヤ９の障害と
ならないように形状を考慮したもので、凹形状の４隅の
突出部が封止樹脂６を突き抜ける構造をしている。これ
以外の部分の構造は第１の実施例と同じため説明は省略
する。FIG. 2A is an external view of a metal case used in a second embodiment of the present invention, and FIG. 2B is a longitudinal sectional view of the second embodiment. In the present embodiment, the metal case 2 is formed such that the protrusion of the concave shape is longer than the thickness of the wiring board, and the shape is taken into consideration so as not to obstruct the bonding wires 9 connecting the semiconductor element 8 and the conductive wiring pattern 3. The protrusions at the four corners of the shape penetrate the sealing resin 6. The structure of other parts is the same as that of the first embodiment, and the description is omitted.
【００１２】本実施例では、混成集積回路装置の上面部
に、金属ケース２の露出部を設けた構造としているとこ
ろに特徴がある。つまり、マザーボード上への搭載にお
いて、マザーボード上での熱放散を行なうことが不可能
な場合に、図示したように金属ケースの突出部に放熱板
１０等を取り付けることにより本混成集積回路装置で発
生する自己発熱エネルギーを速やかに放散することが可
能となる。The present embodiment is characterized in that an exposed portion of the metal case 2 is provided on the upper surface of the hybrid integrated circuit device. In other words, when it is impossible to dissipate heat on the motherboard during mounting on the motherboard, the heat dissipation plate 10 or the like is attached to the protruding portion of the metal case as shown in FIG. Self-heating energy can be quickly dissipated.
【００１３】なお、上記実施例では、金属ケース１つに
つき半導体素子１つを搭載という構成を説明したが、金
属ケース１つに複数個の半導体素子を搭載することも当
然可能であり、また、配線基板上に複数の金属ケースを
設置することも可能で同様の効果がある。In the above embodiment, one semiconductor element is mounted on one metal case. However, a plurality of semiconductor elements can be mounted on one metal case. It is also possible to install a plurality of metal cases on the wiring board, and the same effect is obtained.
【００１４】[0014]
【発明の効果】以上説明したように本発明は、局部的に
自己発熱量の高い半導体素子の搭載について、熱伝導率
の高い金属ケース内に搭載し装置外部に効率よく誘導す
る構造としたことにより、従来の配線基板の材質に変更
を加えることなく、熱放散性の高いかつ表面実装構造の
混成集積回路装置を製品化できるという効果がある。As described above, according to the present invention, a semiconductor element having a high self-heating value is mounted in a metal case having a high thermal conductivity and efficiently guided to the outside of the apparatus. Accordingly, there is an effect that a hybrid integrated circuit device having a high heat dissipation property and a surface mount structure can be commercialized without changing the material of the conventional wiring board.
【００１５】また、凹形状の金属ケースを用いることに
より、配線基板壁面への嵌合性が高まると同時に放熱板
の取付が容易になること及び表面実装上問題となる底面
の平坦性に影響を与えない埋め込み深さ位置への調整が
容易となるという利点がある。Further, by using the concave metal case, the fitting property to the wall surface of the wiring board is enhanced, and at the same time, the attachment of the heat radiating plate is facilitated and the flatness of the bottom surface which is a problem in surface mounting is affected. There is an advantage that the adjustment to the embedding depth position that is not given becomes easy.
【図１】（ａ）は、本発明の第１の実施例の外観図であ
り、（ｂ）は、本実施例の金属ケースの外観図、（ｃ）
は、本実施例の縦断面図である。FIG. 1A is an external view of a first embodiment of the present invention, FIG. 1B is an external view of a metal case of the present embodiment, and FIG.
1 is a longitudinal sectional view of the present embodiment.
【図２】（ａ）は、本発明の第２の実施例の金属ケース
の外観図であり、（ｂ）は、本実施例の断面図である。FIG. 2A is an external view of a metal case according to a second embodiment of the present invention, and FIG. 2B is a cross-sectional view of the present embodiment.
【図３】（ａ）は、従来の混成集積回路装置の平面図、
（ｂ）は、（ａ）の断面図、（ｃ）は、Ａ部の拡大図で
ある。FIG. 3A is a plan view of a conventional hybrid integrated circuit device,
(B) is a sectional view of (a), and (c) is an enlarged view of a portion A.
【図４】（ａ）は、従来の混成集積回路装置の他の例の
平面図、（ｂ）は、（ａ）の断面図である。FIG. 4A is a plan view of another example of the conventional hybrid integrated circuit device, and FIG. 4B is a cross-sectional view of FIG.
１ 絶縁基板 ２ 金属ケース ３ 導体配線パターン ４ 端面リード ５ 枠 ６ 封止樹脂 ７ 接着剤 ８ 半導体素子 ９ ボンディングワイヤ １０ 放熱板 １１ 貫通孔 ２１ 絶縁層 ２２ 外部リード ２３ 金属基板 ２４ 接着剤 ２５ 放熱フィン ２６ 配線基板 ２７ 接着剤 ２８ セラミック基板 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Metal case 3 Conductor wiring pattern 4 End surface lead 5 Frame 6 Sealing resin 7 Adhesive 8 Semiconductor element 9 Bonding wire 10 Heat sink 11 Through hole 21 Insulating layer 22 External lead 23 Metal substrate 24 Adhesive 25 Heat radiating fin 26 Wiring board 27 Adhesive 28 Ceramic substrate
Claims (1)
も端面リード部及びこれに接続される導体配線部が形成
された絶縁基板の貫通孔に挿入され、かつこの金属ケー
ス内には半導体素子が搭載されて、前記絶縁基板上の導
体配線部と電気的に接続され樹脂封止されていることを
特徴とする混成集積回路装置。A metal case having a concave shape is inserted into a through hole of an insulating substrate having at least an end face lead portion and a conductor wiring portion connected thereto, and a semiconductor element is mounted in the metal case. A hybrid integrated circuit device electrically connected to the conductor wiring portion on the insulating substrate and sealed with a resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15017692A JP2795063B2 (en) | 1992-06-10 | 1992-06-10 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15017692A JP2795063B2 (en) | 1992-06-10 | 1992-06-10 | Hybrid integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05343607A JPH05343607A (en) | 1993-12-24 |
| JP2795063B2 true JP2795063B2 (en) | 1998-09-10 |
Family
ID=15491167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15017692A Expired - Lifetime JP2795063B2 (en) | 1992-06-10 | 1992-06-10 | Hybrid integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2795063B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3471111B2 (en) * | 1995-03-20 | 2003-11-25 | 三菱電機株式会社 | Semiconductor device |
| JP2007157801A (en) * | 2005-12-01 | 2007-06-21 | Matsushita Electric Ind Co Ltd | Semiconductor module and its manufacturing method |
| US9466545B1 (en) | 2007-02-21 | 2016-10-11 | Amkor Technology, Inc. | Semiconductor package in package |
| JP5277597B2 (en) * | 2007-09-21 | 2013-08-28 | ダイキン工業株式会社 | module |
| JP2013093620A (en) * | 2013-02-06 | 2013-05-16 | Daikin Ind Ltd | Module |
-
1992
- 1992-06-10 JP JP15017692A patent/JP2795063B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05343607A (en) | 1993-12-24 |
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