JP2625107B2 - Manufacturing method of exposure mask - Google Patents
Manufacturing method of exposure maskInfo
- Publication number
- JP2625107B2 JP2625107B2 JP17965686A JP17965686A JP2625107B2 JP 2625107 B2 JP2625107 B2 JP 2625107B2 JP 17965686 A JP17965686 A JP 17965686A JP 17965686 A JP17965686 A JP 17965686A JP 2625107 B2 JP2625107 B2 JP 2625107B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- shielding film
- substrate
- exposure mask
- mixed layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、例えばホトエッチング等に用いられる露
光用マスクの製造方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an exposure mask used for, for example, photoetching.
第３図は、従来の露光用マスクの一例を部分的に示す
断面図である。この露光用マスク２は、例えばガラス基
板、石英基板等の透光性（光透過性）の基板４上に、例
えばクロム、酸化クロム、シリコン、酸化シリコン、酸
化鉄等から成る遮光膜６を、例えば真空蒸着、スパッタ
リング、CVD法等により形成したものである。遮光膜６
は、後で例えばエッチング法等によりパターン化され
る。FIG. 3 is a sectional view partially showing an example of a conventional exposure mask. The exposure mask 2 includes a light-shielding film 6 made of, for example, chromium, chromium oxide, silicon, silicon oxide, iron oxide, or the like on a light-transmitting (light-transmitting) substrate 4 such as a glass substrate or a quartz substrate. For example, it is formed by vacuum evaporation, sputtering, CVD, or the like. Light shielding film 6
Is patterned later by, for example, an etching method.
所が上記のような露光用マスク２においては、基板４
と遮光膜６との密着性が悪いため、遮光膜６の一部の脱
落によってパターン欠陥が発生したりパターン精度が悪
化したりするような問題があった。However, in the exposure mask 2 as described above, the substrate 4
Since the adhesion between the light-shielding film 6 and the light-shielding film 6 is poor, there is a problem that a part of the light-shielding film 6 is dropped, thereby causing a pattern defect or deteriorating the pattern accuracy.
そこでこの発明は、遮光膜の密着性の高い露光用マス
クの製造方法を提供することを主たる目的とする。Accordingly, an object of the present invention is to provide a method for manufacturing an exposure mask having high light-shielding film adhesion.
この発明の製造方法は、真空中で透光性の基板に対し
て、遮光膜構成物質を蒸着しながらそれと同時に、加速
されたイオンの照射を行うことによって、基板上に遮光
膜を、かつ両者の界面付近に両者の構成物質を含んで成
り厚さが5nm〜50nmの混合層を形成することを特徴とす
る。The manufacturing method of the present invention is to provide a light-shielding film on a substrate by simultaneously irradiating accelerated ions while simultaneously depositing a light-shielding film constituent material on a light-transmitting substrate in a vacuum. Is characterized in that a mixed layer having a thickness of 5 nm to 50 nm is formed in the vicinity of the interface.
この発明の製造方法によれば、基板上に蒸着された遮
光膜構成物質が照射イオンによって基板内部に叩き込ま
れたり、あるいはそれと共に基板構成物質が蒸着された
遮光膜内に叩き出されたりして、基板と蒸着膜との界面
付近に両者の混合層が形成されると共に、この混合層上
に遮光膜が形成される。According to the manufacturing method of the present invention, the light-shielding film constituent material deposited on the substrate is hammered into the substrate by the irradiation ions, or the light-shielding film is hammered out together with the substrate constituent material. A mixed layer of the two is formed near the interface between the substrate and the deposited film, and a light-shielding film is formed on the mixed layer.
第１図は、この発明に係る製造方法によって作られる
露光用マスクの一例を部分的に示す断面図である。この
露光用マスク10においては、前述したような透光性の基
板４上に前述したような遮光膜６が形成されており、か
つこの基板４と遮光膜６との界面付近に両者の構成物質
を含んで成る混合層８が形成されている。遮光膜６は、
必要に応じて別途、化学エッチング法、電解エッチング
法、ドライエッチング法等によりパターン化される。FIG. 1 is a sectional view partially showing an example of an exposure mask produced by the manufacturing method according to the present invention. In the exposure mask 10, the above-described light-shielding film 6 is formed on the above-described light-transmitting substrate 4, and both constituent materials are located near the interface between the substrate 4 and the light-shielding film 6. Is formed. The light shielding film 6
If necessary, it is separately patterned by a chemical etching method, an electrolytic etching method, a dry etching method, or the like.
上記露光用マスク10においては、混合層８が言わば楔
のような作用をするので、遮光膜６の基板４に対する密
着性が非常に高く、遮光膜６は剥離しにくい。従って、
従来のマスクの欠点であった遮光膜の脱落によるパター
ン欠陥の発生、パターン精度の悪化というような問題は
無くなる。In the exposure mask 10, since the mixed layer 8 acts like a wedge, the adhesion of the light-shielding film 6 to the substrate 4 is extremely high, and the light-shielding film 6 is hard to peel off. Therefore,
Problems such as generation of pattern defects due to falling off of the light-shielding film and deterioration of pattern accuracy, which are disadvantages of the conventional mask, are eliminated.
尚、上記混合層８の厚みは、5nm未満では上述した密
着性の向上が少なく、逆に500nmを越えると一般のエッ
チング法で遮光膜６をパターン化した時に遮光膜６の有
る部分と無い部分とのコントラストが低下する恐れがあ
るので、5nm〜500nm、より好ましくは5nm〜50nm程度の
範囲内にするのが好ましい。If the thickness of the mixed layer 8 is less than 5 nm, the above-mentioned improvement in the adhesion is small. On the contrary, if it exceeds 500 nm, the portion where the light shielding film 6 is present when the light shielding film 6 is patterned by a general etching method is not included. Therefore, it is preferable that the thickness be in the range of about 5 nm to 500 nm, more preferably, about 5 nm to 50 nm.
次に上記のような露光用マスク10の製造方法の例を第
２図を参照して説明する。Next, an example of a method for manufacturing the above-described exposure mask 10 will be described with reference to FIG.
第２図は、この発明に係る製造方法を実施する装置の
一例を示す概略図である。前述したような基板４がホル
ダ12に取り付けられて真空容器（図示省略）内に収納さ
れており、当該基板４に向けて蒸発源18およびイオン源
14が配置されている。蒸発源18は例えば電子ビーム蒸発
源であり、蒸気化された遮光膜構成物質20を基板４上に
蒸着させることができる。イオン源14はバケット型イオ
ン源が好ましく、それによれば均一で大面積のイオン16
を加速して基板４に照射することができる。FIG. 2 is a schematic view showing an example of an apparatus for performing the manufacturing method according to the present invention. The substrate 4 as described above is attached to the holder 12 and housed in a vacuum container (not shown). The evaporation source 18 and the ion source
14 are located. The evaporation source 18 is, for example, an electron beam evaporation source, and is capable of depositing the vaporized light shielding film constituent material 20 on the substrate 4. The ion source 14 is preferably a bucket type ion source.
Can be accelerated to irradiate the substrate 4.
上記遮光膜構成物質20およびイオン16の種類は、基板
４上に形成しようとする遮光膜６の種類に応じて、例え
ば次のよう組み合わせが採り得る。The types of the light-shielding film constituent material 20 and the ions 16 may be, for example, the following combinations according to the type of the light-shielding film 6 to be formed on the substrate 4.
基板４上に例えばクロム、シリコン等の元素から成
る遮光膜６を形成する場合は、遮光膜構成物質20として
上記のようなクロム、シリコン等の元素、イオン16とし
てアルゴン、ネオン等の不活性ガスイオン。When the light-shielding film 6 made of an element such as chromium or silicon is formed on the substrate 4, the light-shielding film constituting material 20 is an element such as chromium or silicon, and the ions 16 are an inert gas such as argon or neon. ion.
基板４上に例えば酸化クロム、酸化シリコン、酸化
鉄等の化合物から成る遮光膜６を形成する場合は、遮光
膜構成物質20としてクロム、シリコン、鉄等の元素、イ
オン16として酸素等の化合物構成イオン。When the light-shielding film 6 made of a compound such as chromium oxide, silicon oxide, or iron oxide is formed on the substrate 4, the light-shielding film constituent material 20 is composed of an element such as chromium, silicon, or iron, and the ions 16 are formed of a compound such as oxygen. ion.
処理に際しては、真空容器内を例えば10-5〜10-7Torr
程度にまで排気した後、蒸発源18からの上記のような遮
光膜構成物質20を基板４上に蒸着しながらそれと同時
に、イオン源14からの上記のようなイオン16を基板４に
向けて照射する。なお、このような処理後に必要に応じ
て更に、遮光膜構成物質20の蒸着のみを行っても良い。At the time of processing, the inside of the vacuum vessel is, for example, 10 -5 to 10 -7 Torr.
After evacuation to the extent, the above-mentioned light shielding film constituent material 20 from the evaporation source 18 is deposited on the substrate 4 while simultaneously irradiating the above-mentioned ions 16 from the ion source 14 toward the substrate 4. I do. After such a process, if necessary, only the deposition of the light shielding film constituent material 20 may be performed.
上記処理によって、基板４上に前述したような混合層
８が形成され、その上に前述したような遮光膜６が形成
される。混合層８が形成されるのは、基板４上に蒸着さ
れた遮光膜構成物質20がイオン16によって基板４の内部
に叩き込まれたり、あるいはそれと共に基板４を構成す
る物質が蒸着された遮光膜６内に叩き出されたりする作
用による。以上によって、前述したような露光用マスク
10が得られる。By the above processing, the mixed layer 8 as described above is formed on the substrate 4, and the light-shielding film 6 as described above is formed thereon. The mixed layer 8 is formed because the light-shielding film constituting material 20 deposited on the substrate 4 is driven into the inside of the substrate 4 by the ions 16 or the light-shielding film on which the material constituting the substrate 4 is deposited. 6 due to the action of being knocked out. As described above, the exposure mask as described above
10 is obtained.
上記の場合、混合層８の厚みは、イオン16のエネルギ
ー等によって前述したような範囲内に調整することがで
きる。In the above case, the thickness of the mixed layer 8 can be adjusted within the above-described range by the energy of the ions 16 and the like.
また、イオン16のエネルギーは、それがあまり大きい
とそのスパッタリング作用等が無視できなくなるため、
数KeV〜数十KeV程度にするのが好ましい。イオン16の注
入量は、それがあまり少ないと混合層８ができにくく、
逆にあまり多いと混合層８等の内部にガスボイド等がで
き易いため、1015〜1018イオン/cm2程度にするのが好ま
しい。Also, if the energy of the ions 16 is too large, its sputtering action and the like cannot be ignored,
It is preferable to make it about several KeV to several tens KeV. If the amount of the ion 16 implanted is too small, it is difficult to form the mixed layer 8,
Liable can conversely too large, the mixed layer 8 or the like inside Gasuboido etc., preferably in 1015 about 18 ion / cm 2.
実験例 研磨、洗浄した石英ガラス基板上に、クロムを10Å/m
inで蒸着させながら、アルゴンイオンを30KeVで注入
し、2500Åの遮光膜を得た。このときの混合層の厚さは
約30nmであった。これによって、遮光膜の密着性の高い
露光用マスクが得られた。Experimental example 10 mm / m of chromium on a polished and washed quartz glass substrate
While depositing in, argon ions were implanted at 30 KeV to obtain a light-shielding film of 2500 °. At this time, the thickness of the mixed layer was about 30 nm. As a result, an exposure mask having high adhesion of the light-shielding film was obtained.
この発明に係る製造方法によれば、次のような効果を
奏する。According to the manufacturing method of the present invention, the following effects can be obtained.
混合層を有していた、これがあたかも楔のような作
用をして遮光膜の基板に対する密着性が高く、従って従
来のマスクの欠点であった遮光膜の脱落によるパターン
欠陥の発生、パターン精度の悪化というような問題の起
こらない露光用マスクを、簡単に製造することができ
る。Having a mixed layer, it acts like a wedge, and the light-shielding film has high adhesion to the substrate. Therefore, a defect of the light-shielding film, which is a drawback of the conventional mask, causes a pattern defect and reduces the pattern accuracy. An exposure mask which does not cause a problem such as deterioration can be easily manufactured.
混合層の厚さが5nm未満では遮光膜の密着性向上が
少なく、逆に混合層をあまり厚くすると、一般のエッチ
ング法で遮光膜をパターン化した時に遮光膜の有る部分
と無い部分とのコントラストが低下するけれども、この
発明では混合層の厚さを5nm〜50nmにするので、露光用
マスクに必要とされる遮光膜の密着性が十分得られ、し
かもコントラストを低下させずに済み、遮光膜の密着性
向上と、マスクとしてのコントラスト維持とをうまく両
立させることができる。When the thickness of the mixed layer is less than 5 nm, the adhesion of the light-shielding film is little improved. Conversely, when the mixed layer is too thick, the contrast between the portion with and without the light-shielding film when the light-shielding film is patterned by a general etching method. However, in the present invention, since the thickness of the mixed layer is 5 nm to 50 nm, sufficient adhesion of the light-shielding film required for the exposure mask can be obtained, and furthermore, the contrast is not reduced, and the light-shielding film is not required. And the maintenance of the contrast as a mask can be well compatible.
第１図は、この発明に係る製造方法によって作られる露
光用マスクの一例を部分的に示す断面図である。第２図
は、この発明に係る製造方法を実施する装置の一例を示
す概略図である。第３図は、従来の露光用マスクの一例
を部分的に示す断面図である。 ４……基板、６……遮光膜、８……混合層、10……露光
用マスク、14……イオン源、16……イオン、18……蒸発
源、20……遮光膜構成物質。FIG. 1 is a sectional view partially showing an example of an exposure mask produced by the manufacturing method according to the present invention. FIG. 2 is a schematic view showing an example of an apparatus for performing the manufacturing method according to the present invention. FIG. 3 is a sectional view partially showing an example of a conventional exposure mask. 4 substrate, 6 light-shielding film, 8 mixed layer, 10 exposure mask, 14 ion source, 16 ion, 18 evaporation source, 20 light-shielding film constituent material.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭54−21272（ＪＰ，Ａ) 特開 昭60−185952（ＪＰ，Ａ) 特開 昭51−40874（ＪＰ，Ａ) 特開 昭56−158335（ＪＰ，Ａ) 特開 昭55−151643（ＪＰ，Ａ) 特開 昭60−255975（ＪＰ，Ａ) 特開 昭59−74279（ＪＰ，Ａ) 特開 昭61−106767（ＪＰ，Ａ) 特開 昭60−190560（ＪＰ，Ａ) 特開 昭59−83759（ＪＰ，Ａ) 特開 昭59−50175（ＪＰ，Ａ) 特開 昭59−20465（ＪＰ，Ａ) 特開 昭58−153774（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-54-21272 (JP, A) JP-A-60-185952 (JP, A) JP-A-51-40874 (JP, A) JP-A-56-1982 158335 (JP, A) JP-A-55-151643 (JP, A) JP-A-60-255975 (JP, A) JP-A-59-74279 (JP, A) JP-A-61-106767 (JP, A) JP-A-60-190560 (JP, A) JP-A-59-83759 (JP, A) JP-A-59-50175 (JP, A) JP-A-59-20465 (JP, A) JP-A-58-153774 (JP, A)
Claims (1)
成物質を蒸着しながらそれと同時に、加速されたイオン
の照射を行うことによって、基板上に遮光膜を、かつ両
者の界面付近に両者の構成物質を含んで成り厚さが5nm
〜50nmの混合層を形成することを特徴とする露光用マス
クの製造方法。1. A light-shielding film is formed on a light-transmitting substrate in a vacuum while simultaneously irradiating accelerated ions while depositing a light-shielding film constituent material on the substrate. It contains both constituent materials in the vicinity and has a thickness of 5 nm
A method for producing an exposure mask, comprising forming a mixed layer having a thickness of about 50 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17965686A JP2625107B2 (en) | 1986-07-30 | 1986-07-30 | Manufacturing method of exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17965686A JP2625107B2 (en) | 1986-07-30 | 1986-07-30 | Manufacturing method of exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6334549A JPS6334549A (en) | 1988-02-15 |
| JP2625107B2 true JP2625107B2 (en) | 1997-07-02 |
Family
ID=16069583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17965686A Expired - Lifetime JP2625107B2 (en) | 1986-07-30 | 1986-07-30 | Manufacturing method of exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2625107B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5421272A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Metal photo mask |
| JPS60185952A (en) * | 1984-03-05 | 1985-09-21 | Fujitsu Ltd | Photomask |
-
1986
- 1986-07-30 JP JP17965686A patent/JP2625107B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6334549A (en) | 1988-02-15 |
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