JP2599832B2 - Manufacturing method of spatial light modulator - Google Patents
Manufacturing method of spatial light modulatorInfo
- Publication number
- JP2599832B2 JP2599832B2 JP3037877A JP3787791A JP2599832B2 JP 2599832 B2 JP2599832 B2 JP 2599832B2 JP 3037877 A JP3037877 A JP 3037877A JP 3787791 A JP3787791 A JP 3787791A JP 2599832 B2 JP2599832 B2 JP 2599832B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electro
- layer
- plate
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【0001】[0001]
【産業上の利用分野】本発明は、Bi12SiO 20(BSO) 単結
晶等の、電気光学効果と光伝導効果を有する単結晶を用
いた空間光変調素子(PROM, Pockels Readout Optical M
odulator) に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spatial light modulator (PROM, Pockels Readout Optical MRAM) using a single crystal having an electro-optical effect and a photoconductive effect, such as a Bi 12 SiO 20 (BSO) single crystal.
odulator).
【0002】[0002]
【従来の技術】空間光変調素子のうち、BSO 単結晶等の
電気光学効果と光伝導効果を有する単結晶を使用したPR
OM素子は、前記単結晶の光電導効果を利用して、書き込
み画像情報の光強度分布を単結晶板内の電荷分布に変換
して記憶し、次いでこの電荷分布がつくる電界によって
生ずる電気光学効果を利用し、読み出し光の強度分布に
変換するものである。従って、この型の空間光変調素子
は、前記単結晶板とこれをはさむ絶縁層及び透明電極に
よって構成される。2. Description of the Related Art Among spatial light modulators, a PR using a single crystal having an electro-optical effect and a photoconductive effect such as a BSO single crystal is used.
The OM element converts the light intensity distribution of the written image information into a charge distribution in the single crystal plate by using the photoconductive effect of the single crystal and stores it. Is converted into an intensity distribution of the readout light. Therefore, this type of spatial light modulator is composed of the single crystal plate, the insulating layer sandwiching the single crystal plate, and the transparent electrode.
【0003】従来、こうした空間光変調素子は、両面を
光学研摩した前記単結晶板と、パリレン薄膜又は雲母の
へき開膜(絶縁体)とを用いて構成されてきた。また、
絶縁層を蒸着により膜付けする方法があった。しかし、
パリレン薄膜は絶縁耐圧が低いため、前記単結晶の電気
光学効果特性を充分に発揮させることができない。雲母
膜は固有の複屈折性を有しているため、素子の電気光学
効果特性が複雑なものになるうえ、厚さが均一で均質な
大面積の薄板を作ることが困難であり、絶縁層形成時の
歩留りが悪い。Conventionally, such a spatial light modulator has been constituted by using the single crystal plate whose both surfaces are optically polished, and a parylene thin film or a cleaved film (insulator) of mica. Also,
There has been a method in which an insulating layer is formed by vapor deposition. But,
Since the parylene thin film has a low dielectric strength, the electro-optical effect characteristics of the single crystal cannot be sufficiently exhibited. Since the mica film has an inherent birefringence, the electro-optical effect characteristics of the element are complicated, and it is difficult to produce a uniform large-area thin plate having a uniform thickness. Poor yield during formation.
【0004】また、特に、インコヒーレント光画像をコ
ヒーレント光画像に変換する空間光変調素子において
は、BSO単結晶の端面での多重反射によって生じる干
渉縞を防止するために前記単結晶板にテーパを設けるこ
とが検討されている。このとき必要なテーパ角の大きさ
は、素子、装置によって異なるけれども、例えば15分程
度の大きさが必要である。このため、空間光変調素子を
作製する際、前記単結晶板をテーパ状に加工し、その両
面に絶縁板、電極板を順次接着している。In particular, in a spatial light modulator for converting an incoherent light image into a coherent light image, the single crystal plate is tapered to prevent interference fringes caused by multiple reflections at the end face of the BSO single crystal. It is being considered to provide one. At this time, the required taper angle varies depending on the element and the device, but needs to be, for example, about 15 minutes. Therefore, when manufacturing a spatial light modulator, the single crystal plate is processed into a tapered shape, and an insulating plate and an electrode plate are sequentially bonded to both surfaces thereof.
【0005】しかし、前記単結晶板を加工用基盤上に置
いて研削加工、光学研摩した後、接着する方法をとる
と、接着剤の硬化時に接着応力が単結晶に不均一にかか
るため、前記単結晶に歪みが生じ、素子透過光の波面収
差の原因になる。また、例えば数百μm の厚さの前記単
結晶板を単体でテーパ加工しても、前記単結晶板の一方
の側に荷重を加えて研削加工することから、テーパ角の
精度を挙げることは困難であり、またこのテーパの向き
も決定できない。However, when the single crystal plate is placed on a processing base, ground, optically polished, and then bonded, the bonding stress is unevenly applied to the single crystal when the adhesive is cured. Distortion occurs in the single crystal, which causes wavefront aberration of light transmitted through the element. Further, even if the single crystal plate having a thickness of several hundred μm is tapered by itself, for example, a load is applied to one side of the single crystal plate and grinding is performed. It is difficult, and the direction of this taper cannot be determined.
【0006】[0006]
【発明が解決しようとする課題】本発明の課題は、空間
光変調素子の大面積化が可能であり、絶縁層の加工時の
歩留りが高く、厚さが均一かつ均質な絶縁層が形成でき
るような、空間光変調素子の製造法を提供することであ
る。また、本発明の課題は、大面積の電気光学効果と光
伝導効果を有する単結晶層を形成でき、歩留りが高く、
前記単結晶層における波面収差を低減できるような、空
間光変調素子の製造法を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to make it possible to increase the area of a spatial light modulator, to provide a high yield when processing an insulating layer, and to form a uniform and uniform insulating layer. It is an object of the present invention to provide a method for manufacturing such a spatial light modulator. Further, an object of the present invention is to form a single crystal layer having a large-area electro-optical effect and a photoconductive effect, and a high yield,
It is an object of the present invention to provide a method of manufacturing a spatial light modulator capable of reducing a wavefront aberration in the single crystal layer.
【0007】[0007]
【課題を解決するための手段】本発明に係る空間光変調
素子の製造法は、透明電極を有する基板上に、光学ガラ
スからなる厚さ2mm以上の絶縁板を接着し、この絶縁
板の端面を加工して厚さ5〜30μmの絶縁層を形成し
た後、この絶縁層の上に少なくとも電気光学結晶層と透
明電極と基板とを設けたことを特徴とする。また、本発
明に係る空間光変調素子の製造法は、透明電極と光学ガ
ラスからなる絶縁層とを有する基板上に、Bi12Si
O20単結晶およびLiNbO3からなる群より選ばれ
た一種以上の単結晶からなる厚さ2mm以上の電気光学
結晶板を接着し、この電気光学結晶板の端面を加工して
厚さ30〜500μmの電気光学結晶層を形成した後、
この電気光学結晶層の上に少なくとも透明電極と基板を
設けたことを特徴とする。According to a method of manufacturing a spatial light modulator according to the present invention, an insulating plate having a thickness of 2 mm or more made of optical glass is adhered to a substrate having a transparent electrode, and an end face of the insulating plate is formed. After processing to form an insulating layer having a thickness of 5 to 30 μm, at least an electro-optic crystal layer, a transparent electrode, and a substrate are provided on the insulating layer. Further, the method for manufacturing a spatial light modulator according to the present invention includes the step of forming a Bi 12 Si film on a substrate having a transparent electrode and an insulating layer made of optical glass.
Bonding the O 20 single crystal and LiNbO 3 composed of one or more single crystals selected from the group consisting of thickness 2mm or more electro-optic crystal plate, the thickness of 30~500μm by processing the end surface of the electro-optic crystal plate After forming the electro-optic crystal layer of
At least a transparent electrode and a substrate are provided on the electro-optic crystal layer.
【0008】[0008]
【実施例】まず、本発明の実施例による、空間光変調素
子の製造法を、図1〜図4を参照しながら説明する。ま
ず、基板1を準備するが、基板1の材質としては、ホウ
ケイ酸ガラス、青板ガラス、BK−7ガラス等の光学ガ
ラスを用いる必要がある。次いで、基板1に蒸着等によ
って透明電極膜2を形成する。そして、絶縁板3を基板
1へと接着した後、絶縁板3の端面3aを研削加工及び
光学研摩し、図2に示すような絶縁層4を形成する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a method for manufacturing a spatial light modulator according to an embodiment of the present invention will be described with reference to FIGS. First, the substrate 1 is prepared. As a material of the substrate 1, it is necessary to use an optical glass such as borosilicate glass, blue plate glass, and BK-7 glass. Next, the transparent electrode film 2 is formed on the substrate 1 by vapor deposition or the like. Then, after bonding the insulating plate 3 to the substrate 1, the end face 3a of the insulating plate 3 is ground and optically polished to form an insulating layer 4 as shown in FIG.
【0009】次いで、図3に示すように、絶縁層4の表
面側に、電気光学効果と光伝導効果を有するBi12S
iO20単結晶またはLiNbO3単結晶からなる単結
晶板5を接着し、この単結晶板5の端面5aを研削加工
及び光学研摩し、図4に示すような単結晶層7を形成す
る。Next, as shown in FIG. 3, Bi 12 S having an electro-optical effect and a photoconductive effect is formed on the surface side of the insulating layer 4.
A single crystal plate 5 made of iO 20 single crystal or LiNbO 3 single crystal is bonded, and an end face 5a of the single crystal plate 5 is ground and optically polished to form a single crystal layer 7 as shown in FIG.
【0010】一方、これとは別に、基板1に蒸着等によ
って透明電極膜2を形成し、絶縁板3を基板1に接着
し、絶縁板3の端面3aを研削加工及び光学研摩し、図2
に示すような絶縁層4を形成する。そして、図4に示す
ように、この接着物の絶縁層4を、前記単結晶層7に接
着し、空間光変調素子を得る。On the other hand, separately from this, a transparent electrode film 2 is formed on the substrate 1 by vapor deposition or the like, the insulating plate 3 is bonded to the substrate 1, and the end face 3a of the insulating plate 3 is ground and optically polished.
The insulating layer 4 as shown in FIG. Then, as shown in FIG. 4, the adhesive insulating layer 4 is bonded to the single crystal layer 7 to obtain a spatial light modulator.
【0011】こうした製造法によれば、厚さが2mm以
上の絶縁板3の端面を研削加工及び光学研摩して絶縁層
4を形成して、厚さ5〜30μmの絶縁層4を形成して
いるので、最初から薄膜化した絶縁性薄板を前記単結晶
板に貼り合わせる方法と異なり、両者の接着の段階での
絶縁層の湾曲が生じず、従って従来よりも厚さが均一か
つ均質な絶縁層4を形成できるようになり、また接着段
階での歩留りが向上し、更には絶縁層4の大面積化も可
能となった。ここで、絶縁板3の厚さは2mm以上とす
ることが必要であり、これによって、絶縁板2の接着時
の変形を防止し、絶縁層4の厚さを均一にでき、絶縁耐
圧のバラツキや放電による素子破壊を防止できる。According to such a manufacturing method, the end face of the insulating plate 3 having a thickness of 2 mm or more is ground and optically polished to form the insulating layer 4, and the insulating layer 4 having a thickness of 5 to 30 μm is formed. Therefore, unlike the method in which an insulating thin plate thinned from the beginning is bonded to the single crystal plate, the insulating layer does not bend at the stage of bonding the two, so that the insulating layer has a more uniform and uniform thickness than before. The layer 4 can be formed, the yield in the bonding step is improved, and the area of the insulating layer 4 can be increased. Here, it is necessary that the thickness of the insulating plate 3 be 2 mm or more, whereby deformation during bonding of the insulating plate 2 can be prevented, the thickness of the insulating layer 4 can be made uniform, and variation in withstand voltage can be prevented. And device destruction due to electric discharge can be prevented.
【0012】また、前記単結晶板5の厚さは2mm以上
と厚くする必要がある。単結晶板5の端面5aを研削加
工及び光学研摩して前記単結晶層7を形成しているの
で、最初から薄膜化した電気光学結晶層を基板等に貼り
合わせる方法と異なり、前記単結晶板5の接着の段階で
これに湾曲が生じず、従って、従来よりも均質な前記単
結晶層7を形成できるようになり、また接着段階での歩
留りが向上し、更には電気光学結晶層7の大面積化も可
能となった。Further, the thickness of the single crystal plate 5 needs to be as thick as 2 mm or more. Since the single crystal layer 7 is formed by grinding and optically polishing the end face 5a of the single crystal plate 5, unlike the method in which an electro-optical crystal layer thinned from the beginning is bonded to a substrate or the like, the single crystal plate 5 does not bend at the bonding stage, so that the single crystal layer 7 more uniform than before can be formed, the yield in the bonding stage is improved, and the electro-optical crystal layer 7 Large area is also possible.
【0013】前記単結晶板5の厚さが2mm以下である
と、接着剤の硬化時に単結晶に応力が不均一にかかり、
前記単結晶層4に歪みが生じ、素子透過光の波面収差の
原因になる。また、単結晶層4の厚さが30〜500μ
mとなるまで研磨加工する。なお、図4において、一方
の絶縁層4を省略することも、可能である。かかる形態
の空間光変調素子自体は、物としては公知である。When the thickness of the single crystal plate 5 is 2 mm or less, stress is unevenly applied to the single crystal when the adhesive is cured,
The single crystal layer 4 is distorted, causing a wavefront aberration of light transmitted through the element. Further, the thickness of the single crystal layer 4 is 30 to 500 μm.
Polish until it reaches m. In FIG. 4, one of the insulating layers 4 may be omitted. Such a spatial light modulation device itself is known as an object.
【0014】次に、レーザー光等のコヒーレント光を読
み出し光として用いる空間光変調素子においては、前述
したように、干渉縞の発生を防止するために、前記単結
晶層7にテーパを付する必要がある。この目的のため、
本実施例では、予め例えば15分のテーパ面8を有する加
工用基盤6を準備し、このテーパ面8へと基板1を仮留
めし、図3の状態とする。この状態では、加工用基盤6
の下側面9とテーパ面8とは、所定のテーパ角、例えば
15分をなし、テーパ面8と、前記単結晶板5の端面5aと
は平行となる。そして、破線Aに沿って前記単結晶板5
を水平に研削加工し、次いで光学研摩すると、前記単結
晶層7の両側の主面は互いに所定のテーパ角、つまり15
分をなす。Next, in the spatial light modulator using coherent light such as laser light as readout light, as described above, it is necessary to taper the single crystal layer 7 in order to prevent the occurrence of interference fringes. There is. For this purpose,
In this embodiment, a processing base 6 having a tapered surface 8 of, for example, 15 minutes is prepared in advance, and the substrate 1 is temporarily fixed to the tapered surface 8 to obtain a state shown in FIG. In this state, the processing base 6
The lower side surface 9 and the tapered surface 8 have a predetermined taper angle, for example,
For 15 minutes, the tapered surface 8 and the end surface 5a of the single crystal plate 5 are parallel. And, along the broken line A, the single crystal plate 5
Is horizontally ground and then optically polished, the main surfaces on both sides of the single crystal layer 7 have a predetermined taper angle, that is, 15 degrees.
Make a minute.
【0015】このような方法で前記単結晶層7にテーパ
を付けることとすると、研削加工の段階で前記単結晶板
5の全面に亘って均等に圧力が加わるので、平面精度の
良い加工が可能になる。また、加工用基盤6において、
下側面9とテーパ面8との間のテーパ角を所定角度に設
定するだけで、前記単結晶層7におけるテーパ角の精度
を保持することができ、またテーパの向きも自由に決定
できる。When the single crystal layer 7 is tapered by such a method, pressure is uniformly applied over the entire surface of the single crystal plate 5 at the stage of grinding, so that processing with high plane accuracy can be performed. become. In the processing base 6,
Only by setting the taper angle between the lower surface 9 and the tapered surface 8 to a predetermined angle, the accuracy of the taper angle in the single crystal layer 7 can be maintained, and the direction of the taper can be freely determined.
【0016】次に、加工用基盤6の好適例について説明
する。図5は、好適例に係る加工用基盤6をテーパ面8
側からみた拡大平面図、図6はこの加工用基盤6の拡大
側面図である。加工用基盤6のテーパ面8側には、互い
に直交する縦横の線状凹部の交叉からなる網状凹部6aが
形成され、網状凹部6aによって突起6bが互いに区分さ
れ、かつ突起6bが縦横に碁盤目状に配列されている。そ
して、加工用基盤6のテーパ面8に基板1を仮留めする
際には、基板1と突起6bとの間に接着剤層が介在する。
この際、テーパ面8が平坦であるとすると、仮に仮留め
時に基板1の全体に均等に圧力がかかったとしても、接
着剤層の厚さにはどうしても片寄りが生じ、このため前
記単結晶板5を研削加工する際にこれに起因する厚さの
誤差が生ずる。これに対し、本例では、基板1全体に均
等に圧力をかければ、平均よりも過剰な接着剤は硬化前
に網状凹部6aへと逃げるので、結果として接着剤層の厚
さは一定となり、前記単結晶板5の加工精度を一層向上
させることができる。Next, a preferred example of the processing base 6 will be described. FIG. 5 shows that the processing base 6 according to the preferred embodiment has a tapered surface 8.
FIG. 6 is an enlarged side view of the processing base 6 as viewed from the side. On the tapered surface 8 side of the processing base 6, a net-like recess 6a is formed by crossing vertical and horizontal linear recesses orthogonal to each other. It is arranged in a shape. When the substrate 1 is temporarily fixed to the tapered surface 8 of the processing base 6, an adhesive layer is interposed between the substrate 1 and the projection 6b.
At this time, assuming that the tapered surface 8 is flat, even if a pressure is uniformly applied to the entire substrate 1 at the time of the temporary fixing, the thickness of the adhesive layer is inevitably shifted. When the plate 5 is ground, a thickness error due to this occurs. On the other hand, in this example, if pressure is applied evenly to the entire substrate 1, excess adhesive than the average escapes to the mesh concave portion 6 a before curing, and as a result, the thickness of the adhesive layer becomes constant, The processing accuracy of the single crystal plate 5 can be further improved.
【0017】また、前記単結晶板5を研削加工、光学研
摩した後、加工用基盤6から基板1を分離する必要があ
る。通常は仮留めには80℃程度の加熱により除去可能な
接着剤を用いるが、仮にこの接着剤を用いると前記単結
晶層7が基板1 と熱膨張率が異なることから、前記単結
晶層7の端面の平面度が悪くなったり、変形により結晶
層7にクラックが発生する。これに対し、本実施例で
は、接着剤が可溶性である有機溶媒を準備し、この有機
溶媒中に少なくとも接着剤層を浸漬し、超音波洗浄によ
って接着剤を溶解させ、加工用基盤6から基板1を分離
する。この方法であれば、前記単結晶層7の端面の平面
度を良好に保持でき、また、前記単結晶層7中でのクラ
ック発生も防止できる。尚、実施例では絶縁板3を研削
加工した後、光学研磨し、純縁層4を形成したが、絶縁
板3をエッチングした後、光学研磨してもよい。After the single crystal plate 5 is ground and optically polished, it is necessary to separate the substrate 1 from the processing base 6. Usually, an adhesive that can be removed by heating at about 80 ° C. is used for temporary fixing. However, if this adhesive is used, the single crystal layer 7 has a different coefficient of thermal expansion from the substrate 1. In this case, the flatness of the end face becomes poor, or cracks occur in the crystal layer 7 due to deformation. In contrast, in this embodiment, an organic solvent in which the adhesive is soluble is prepared, at least the adhesive layer is immersed in the organic solvent, the adhesive is dissolved by ultrasonic cleaning, Separate 1. According to this method, the flatness of the end face of the single crystal layer 7 can be favorably maintained, and the occurrence of cracks in the single crystal layer 7 can be prevented. In the embodiment, the pure edge layer 4 is formed after the insulating plate 3 is ground and then optically polished. However, the optical polishing may be performed after the insulating plate 3 is etched.
【0018】更に具体的な実験例について述べる。透明
電極膜2を設けたホウケイ酸ガラス基板1を準備した。
また厚さ3mmのホウケイ酸ガラス製絶縁板3を準備し、
この端面3aを平面研削盤で平面研削加工し、砂かけ研摩
し、更に使用砥粒として1)酸化セリウム、2)コロイダル
シリカを順に用いて光学研摩し、厚さ10μm のホウケイ
酸ガラス製絶縁層4を形成した。また、厚さ2.7mm のBS
O 単結晶板5を準備し、これを絶縁層4へと接着した。
また、図5、図6に示すような加工用基盤6を準備し、
加工用基盤6のテーパ面8へと基板1を接着した。テー
パ面8の下側面9に対する勾配は0度15分とし、網状凹
部6aの幅は2mm、平面正方形の突起6bの幅は5mm、凹部
6aの深さは0.5mm 、加工用基盤6全体の厚さは4mmとし
た。そして、BSO 単結晶板5の端面5a側の平面研削盤で
平面研削加工し、次いで砂かけ研摩し、砥粒としてコロ
イダルシリカを用いて光学研摩し、中心厚300 μm のBS
O 単結晶層7を形成した。A more specific experimental example will be described. A borosilicate glass substrate 1 provided with a transparent electrode film 2 was prepared.
In addition, a borosilicate glass insulating plate 3 having a thickness of 3 mm is prepared.
The end face 3a is ground by a surface grinder, sand-ground, and further optically polished by using 1) cerium oxide and 2) colloidal silica in this order, and a 10 μm-thick borosilicate glass insulating layer. 4 was formed. Also, 2.7mm thick BS
An O single crystal plate 5 was prepared and bonded to the insulating layer 4.
Also, a processing base 6 as shown in FIGS. 5 and 6 is prepared,
The substrate 1 was bonded to the tapered surface 8 of the processing base 6. The slope with respect to the lower surface 9 of the tapered surface 8 is 0 degrees 15 minutes, the width of the net-shaped recess 6a is 2 mm, the width of the planar square projection 6b is 5 mm, and the recess is
The depth of 6a was 0.5 mm, and the thickness of the entire processing base 6 was 4 mm. Then, the surface is ground by a surface grinder on the end face 5a side of the BSO single crystal plate 5, then polished by sand, optically polished using colloidal silica as abrasive grains, and BS having a center thickness of 300 μm.
An O single crystal layer 7 was formed.
【0019】そして、この試料について、通常の加熱に
よる剥離方法によって加工用基盤6からホウケイ酸ガラ
ス基板1を剥離させた(比較例)。また一方、溶剤とし
て1,1,1-トリクロロエタンを用い、超音波洗浄機によっ
て15分間超音波洗浄を行い、ホウケイ酸ガラス基板1を
加工用基盤6から剥離させた(実施例)。そして、上記
の各サンプルについて干渉計写真を撮影したところ、図
7(実施例)、図8(比較例)の写真が得られた。ここ
で、縞模様が0.3 μm 間隔の等高線を示すので、実施例
のサンプルでは凹凸の大きさが0.3 μm 以内にとどま
り、比較例のサンプルは3μm 以上の大きさの凹凸を持
っている。The borosilicate glass substrate 1 of this sample was peeled from the processing substrate 6 by a normal heating peeling method (Comparative Example). On the other hand, using 1,1,1-trichloroethane as a solvent, ultrasonic cleaning was performed by an ultrasonic cleaning machine for 15 minutes, and the borosilicate glass substrate 1 was separated from the processing substrate 6 (Example). Then, when an interferometer photograph was taken of each of the above samples, the photographs of FIG. 7 (Example) and FIG. 8 (Comparative Example) were obtained. Here, since the stripe pattern shows contour lines at intervals of 0.3 μm, the size of the unevenness is within 0.3 μm in the sample of the example, and the sample of the comparative example has the unevenness of 3 μm or more.
【0020】次いで、透過波面歪みについて実験した。
即ち、サンプル中をレーザー光等のコヒーレント光が透
過するとき、サンプルの不均質性、歪み等のため、透過
光の電磁波波面がばらつく。このような歪を有する空間
光変調素子は、光画像処理、光情報処理等の用途に使え
ない。このため、次記の各サンプルについて、透過波面
歪みを評価した。具体的には、直径10μm φ位の円形ピ
ンホールにレーザー光を通し、このピンホールを通過し
たレーザー光をサンプル中に透過させ、サンプルから数
m離れたスクリーン上に投影する。スクリーン上に投影
されたビーム形が円形であれば歪みはないと言えるが、
透過波面歪みがあるとビーム形が真円から変形する。Next, an experiment was conducted on transmitted wavefront distortion.
That is, when coherent light such as laser light is transmitted through the sample, the electromagnetic wave front of the transmitted light varies due to inhomogeneity and distortion of the sample. The spatial light modulator having such distortion cannot be used for applications such as optical image processing and optical information processing. Therefore, the transmitted wavefront distortion was evaluated for each of the following samples. Specifically, laser light is passed through a circular pinhole having a diameter of about 10 μmφ, the laser light passing through this pinhole is transmitted through the sample, and projected on a screen several meters away from the sample. If the beam shape projected on the screen is circular, it can be said that there is no distortion,
If there is a transmitted wavefront distortion, the beam shape is deformed from a perfect circle.
【0021】a) BSOウエハー、LiNbO3ウエ
ハー、BK−7ガラス、青板ガラス(すべて厚さは2m
m)にレーザー光を透過させたところ、いずれも透過波
面歪みは見られなかった。 b) 上記のBSOウエハー、LiNbO3ウエハー、
BK−7ガラス、青板ガラス(すべて厚さは2mm)を
青板ガラスに接着し、レーザー光を透過させたところ、
いずれも透過波面歪みは見られなかった。 c) 青板ガラスに厚さ2mmのBSOウエハーを接着
し、そのままレーザー光を透過させた。また、この接着
BSOウエハーを、前記したように研削加工及び光学研
摩し、厚さ50μm又は厚さ100μmとし、それぞれ
レーザー光を透過させた。これらのサンプルについて
は、いずれも透過波面歪みは見られなかった。 d) 青板ガラスに、厚さ2mm、3mm、300μm
の各BSOウエハーを接着し、上記のようにして透過波
面歪みを検査した。この結果、BSOウエハーの厚さが
2mm,3mmの場合は図9の写真に示すようなスクリ
ーン投影画像が得られ、BSOウエハーの厚さが300
μmの場合は図10の写真に示すようなスクリーン投影
画像が得られた。これより、厚さ300μmのBSOウ
エハーを青板ガラスに接着すると、透過波面歪みが生ず
ることが解る。A) BSO wafer, LiNbO 3 wafer, BK-7 glass, blue plate glass (all thickness 2 m)
When the laser light was transmitted through m), no transmitted wavefront distortion was observed. b) The above BSO wafer, LiNbO 3 wafer,
When BK-7 glass and blue plate glass (all thickness 2 mm) were bonded to blue plate glass and laser light was transmitted,
In each case, no transmitted wavefront distortion was observed. c) A BSO wafer having a thickness of 2 mm was bonded to a blue plate glass, and laser light was transmitted as it was. The bonded BSO wafer was ground and optically polished as described above to a thickness of 50 μm or a thickness of 100 μm, respectively, and a laser beam was transmitted. No transmitted wavefront distortion was observed for any of these samples. d) Thickness 2 mm, 3 mm, 300 μm
Were bonded and the transmitted wavefront distortion was inspected as described above. As a result, when the thickness of the BSO wafer is 2 mm or 3 mm, a screen projection image as shown in the photograph of FIG. 9 is obtained, and the thickness of the BSO wafer is 300 mm.
In the case of μm, a screen projection image as shown in the photograph of FIG. 10 was obtained. From this, it can be seen that when a BSO wafer having a thickness of 300 μm is bonded to a soda lime glass, transmitted wavefront distortion occurs.
【0022】[0022]
【発明の効果】本発明によれば、絶縁板を基板上に接着
し、この絶縁板の端面を加工して絶縁層を形成するの
で、最初から薄膜化した絶縁性薄板を電気光学効果と光
伝導効果を有する単結晶板に貼り合わせる方法と異な
り、両者の接着の段階で絶縁層の湾曲が生じず、従って
従来よりも均質な絶縁層を形成できるようになり、また
接着段階での歩留りが向上し、更には絶縁層の大面積化
も可能となった。According to the present invention, an insulating plate is adhered on a substrate, and an end face of the insulating plate is processed to form an insulating layer. Unlike the method of bonding to a single crystal plate having a conductive effect, the insulating layer does not bend at the bonding stage, so that a more uniform insulating layer can be formed than before, and the yield at the bonding stage is improved. The size of the insulating layer can be increased.
【0023】また本発明によれば、前記単結晶板を基板
上に接着し、この前記単結晶板の端面を加工して前記単
結晶層を形成するので、最初から薄膜化した前記単結晶
薄板を基板等に貼り合わせる方法と異なり、前記単結晶
板の接着の段階でこれに湾曲が生じず、従って従来より
も均質な単結晶層を形成できるようになり、また接着段
階での歩留りが向上し、更には電気光学結晶層の大面積
化も可能となった。According to the present invention, the single crystal plate is bonded to a substrate, and the end surface of the single crystal plate is processed to form the single crystal layer. Unlike the method in which the single crystal plate is bonded to a substrate or the like, the single crystal plate does not bend at the bonding stage, so that a single crystal layer more uniform than before can be formed, and the yield in the bonding stage is improved. In addition, the area of the electro-optic crystal layer can be increased.
【図1】基板へと絶縁板を接着する直前の状態を示す正
面図である。FIG. 1 is a front view showing a state immediately before bonding an insulating plate to a substrate.
【図2】絶縁板を研削加工及び光学研摩して絶縁層を形
成した状態を示す正面図である。FIG. 2 is a front view showing a state where an insulating layer is formed by grinding and optically polishing the insulating plate.
【図3】 基板を加工用基盤へと接着し、また電気光学効果と光伝
導効果を有する単結晶板を絶縁層に接着した状態を示す
正面図である。FIG. 3 is a front view showing a state in which a substrate is bonded to a processing base, and a single crystal plate having an electro-optical effect and a photoconductive effect is bonded to an insulating layer.
【図4】絶縁層を形成した後の基板を、前記単結晶層へ
と接着する直前の状態を示す正面図である。FIG. 4 is a front view showing a state immediately before bonding a substrate after forming an insulating layer to the single crystal layer.
【図5】好適例に係る加工用基盤を示す平面図である。FIG. 5 is a plan view showing a processing base according to a preferred example.
【図6】好適例に係る加工用基盤を示す側面図である。FIG. 6 is a side view showing a processing base according to a preferred example.
【図7】基板を加工用基盤から有機溶剤を用いた超音波
洗浄によって剥離したサンプルの干渉計写真である。FIG. 7 is an interferometer photograph of a sample obtained by peeling a substrate from a processing base by ultrasonic cleaning using an organic solvent.
【図8】基板を加工用基盤から加熱法で剥離したサンプ
ルの干渉計写真である。FIG. 8 is an interferometer photograph of a sample obtained by peeling a substrate from a processing substrate by a heating method.
【図9】厚さ2mm、3mmのBSO ウエハーを青板ガラスへ
と接着して得たサンプルに、レーザー光を透過させて得
たスクリーン投影画像を示す写真である。FIG. 9 is a photograph showing a screen projection image obtained by transmitting a laser beam to a sample obtained by bonding a BSO wafer having a thickness of 2 mm and 3 mm to a soda lime glass.
【図10】厚さが300 μm のBSO ウエハーを青板ガラス
へと接着して得たサンプルにレーザー光を透過させて得
たスクリーン投影画像を示す写真である。FIG. 10 is a photograph showing a screen projection image obtained by transmitting a laser beam to a sample obtained by bonding a BSO wafer having a thickness of 300 μm to a soda lime glass.
1 基盤 2 透明電極膜 3 絶縁板 3a 絶縁板の端面 4 絶縁層 5 電気光学結晶板 5a 電気光学結晶板の端面 6 加工用基盤 6a 網状凹部 6b 突起 7 電気光学結晶層 8 テーパ面 DESCRIPTION OF SYMBOLS 1 Base 2 Transparent electrode film 3 Insulating plate 3a End surface of insulating plate 4 Insulating layer 5 Electro-optical crystal plate 5a End surface of electro-optical crystal plate 6 Processing substrate 6a Reticulated recess 6b Projection 7 Electro-optical crystal layer 8 Tapered surface
───────────────────────────────────────────────────── フロントページの続き (72)発明者 丹下 正次 愛知県名古屋市瑞穂区市丘町2丁目38番 地の2 日本ガイシ市丘寮 (72)発明者 浜島 章 愛知県名古屋市西区上堀越町3丁目21番 地 (56)参考文献 特開 平2−245721(JP,A) 特開 昭59−166916(JP,A) 特開 昭54−128358(JP,A) 実開 昭61−42247(JP,U) ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shoji Tange 2-38-2, Okamachi, Mizuho-ku, Nagoya-shi, Aichi Prefecture 2-2, Okashioru, NGK-shi 3-21-21 (56) References JP-A-2-245721 (JP, A) JP-A-59-166916 (JP, A) JP-A-54-128358 (JP, A) Jpn. JP, U)
Claims (6)
からなる厚さ2mm以上の絶縁板を接着し、この絶縁板
の端面を加工して厚さ5〜30μmの絶縁層を形成した
後、この絶縁層の上に少なくとも電気光学結晶層と透明
電極と基板とを設けたことを特徴とする、空間光変調素
子の製造法。1. An insulating plate made of optical glass having a thickness of 2 mm or more is adhered to a substrate having a transparent electrode, and an end surface of the insulating plate is processed to form an insulating layer having a thickness of 5 to 30 μm. A method for manufacturing a spatial light modulator, comprising: providing at least an electro-optic crystal layer, a transparent electrode, and a substrate on the insulating layer.
を有する基板上に、Bi12SiO20単結晶およびL
iNbO3からなる群より選ばれた一種以上の単結晶か
らなる厚さ2mm以上の電気光学結晶板を接着し、この
電気光学結晶板の端面を加工して厚さ30〜500μm
の電気光学結晶層を形成した後、この電気光学結晶層の
上に少なくとも透明電極と基板を設けたことを特徴とす
る、空間光変調素子の製造法。2. A Bi 12 SiO 20 single crystal and an L 12 substrate are provided on a substrate having a transparent electrode and an insulating layer made of optical glass.
An electro-optic crystal plate having a thickness of 2 mm or more made of one or more single crystals selected from the group consisting of iNbO 3 is bonded, and the end face of the electro-optic crystal plate is processed to have a thickness of 30 to 500 μm.
Forming the electro-optic crystal layer, and then providing at least a transparent electrode and a substrate on the electro-optic crystal layer.
記基板上に前記電気光学結晶板を接着した後、テーパ面
を有する加工用基盤のこのテーパ面に前記基板を接着
し、前記電気光学結晶板の端面を研削加工及び光学研摩
してテーパを設けて電気光学結晶層を形成する、請求項
2記載の空間光変調素子の製造法。3. The electro-optic crystal plate is bonded to the substrate having the transparent electrode and the insulating layer, and then the substrate is bonded to the tapered surface of the processing base having a tapered surface. 3. The method for manufacturing a spatial light modulation device according to claim 2, wherein an end face of the crystal plate is formed by grinding and optical polishing to form a taper to form an electro-optic crystal layer.
部を形成し、前記加工用基盤の前記テーパ面に前記基板
を仮留めする際には、前記基板と前記テーパ面の突起と
の間に接着剤層を介在させ、前記基板に圧力をかけて過
剰な接着剤を硬化前に前記網状凹部へと移動させること
を特徴とする、請求項3記載の空間光変調素子の製造
法。4. A net-shaped concave portion is formed in the tapered surface of the processing base, and when the substrate is temporarily fixed to the tapered surface of the processing base, a gap between the substrate and the projection of the tapered surface is formed. 4. The method for manufacturing a spatial light modulation device according to claim 3, wherein an adhesive layer is interposed in the substrate, and pressure is applied to the substrate to move excess adhesive to the net-shaped recess before curing.
を接着している前記接着剤層を有機溶媒中に浸漬し、超
音波洗浄によって前記網状凹部内へと前記有機溶剤を浸
透させて前記接着剤層を溶解させることによって前記加
工用基盤と前記基板とを分離することを特徴とする、請
求項4記載の空間光変調素子の製造法。5. The method according to claim 1, wherein the processing base, the substrate, and the adhesive layer bonding the substrates are immersed in an organic solvent, and the organic solvent is penetrated into the mesh-shaped concave portion by ultrasonic cleaning to perform the bonding. The method according to claim 4, wherein the processing substrate and the substrate are separated by dissolving an agent layer.
び光学研摩して前記電気光学結晶層を形成し、 また透明電極を有する基板上に光学ガラスからなる絶縁
板を接着し、この絶縁板の端面を研削加工及び光学研摩
して絶縁層を形成した後、 前記電気光学結晶層と前記絶縁層とを接着する、請求項
2記載の空間光変調素子の製造法。6. An electro-optic crystal layer is formed by grinding and optically polishing an end face of the electro-optic crystal plate, and bonding an insulating plate made of optical glass on a substrate having a transparent electrode. The method for manufacturing a spatial light modulation element according to claim 2, wherein the electro-optical crystal layer and the insulating layer are bonded after forming an insulating layer by grinding and optically polishing an end face of the element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3037877A JP2599832B2 (en) | 1991-02-08 | 1991-02-08 | Manufacturing method of spatial light modulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3037877A JP2599832B2 (en) | 1991-02-08 | 1991-02-08 | Manufacturing method of spatial light modulator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04256920A JPH04256920A (en) | 1992-09-11 |
JP2599832B2 true JP2599832B2 (en) | 1997-04-16 |
Family
ID=12509765
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JP3037877A Expired - Lifetime JP2599832B2 (en) | 1991-02-08 | 1991-02-08 | Manufacturing method of spatial light modulator |
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JP (1) | JP2599832B2 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54128358A (en) * | 1978-03-28 | 1979-10-04 | Sumitomo Electric Ind Ltd | Production of image converting element |
JPS59127210A (en) * | 1983-01-11 | 1984-07-23 | Seiko Epson Corp | Magnetic head |
JPH0228127B2 (en) * | 1983-03-11 | 1990-06-21 | Hamamatsu Photonics Kk | KUKANHIKARIHENCHOKANNOSEIZOHOHO |
JP2731220B2 (en) * | 1989-03-18 | 1998-03-25 | 日本碍子株式会社 | Image conversion element and X-ray image detection method using the same |
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1991
- 1991-02-08 JP JP3037877A patent/JP2599832B2/en not_active Expired - Lifetime
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