JP2524942B2 - Plasma surface treatment equipment - Google Patents
Plasma surface treatment equipmentInfo
- Publication number
- JP2524942B2 JP2524942B2 JP4220795A JP22079592A JP2524942B2 JP 2524942 B2 JP2524942 B2 JP 2524942B2 JP 4220795 A JP4220795 A JP 4220795A JP 22079592 A JP22079592 A JP 22079592A JP 2524942 B2 JP2524942 B2 JP 2524942B2
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- electrode
- plasma
- gas
- surface treatment
- electrodes
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、高分子材料あるいは金
属材料の表面性状を改質するためのプラズマ表面処理装
置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma surface treatment apparatus for modifying the surface properties of polymer materials or metal materials.
【０００２】[0002]
【従来の技術】高分子材料あるいは金属材料の表面性状
を改質するための表面処理装置として、大気圧下でグロ
ープラズマを発生させる装置が知られている（特開平２
−１５１７１号公報参照）。この技術に於ては、図７に
示すように、所定の距離をおいて対向配置された一対の
電極４０・４１間に誘電体４２および処理対象物１７を
配置し、上部電極４０と下部電極４１との間に交流電源
４３からの交流電圧を印加すると共に、グロープラズマ
の発生が可能な雰囲気ガスを電極周囲に導入することに
より、誘電体４２と下部電極４１とに囲まれた領域４４
にグロープラズマを発生させるようになっている。2. Description of the Related Art An apparatus for generating glow plasma under atmospheric pressure is known as a surface treatment apparatus for modifying the surface properties of a polymer material or a metal material (Japanese Patent Laid-Open No. HEI-2).
(See Japanese Patent Publication No. 15171) In this technique, as shown in FIG. 7, a dielectric 42 and an object to be treated 17 are arranged between a pair of electrodes 40 and 41 opposed to each other with a predetermined distance, and an upper electrode 40 and a lower electrode are arranged. An AC voltage from an AC power supply 43 is applied between the electrodes 41 and 41, and an atmosphere gas capable of generating glow plasma is introduced around the electrodes, thereby forming a region 44 surrounded by the dielectric 42 and the lower electrode 41.
It is designed to generate glow plasma.
【０００３】この時、グロープラズマ中には、処理対象
物１７に向かって進行するイオン２１と、電気的に中性
な浮遊ラジカル２２とが存在しており、これらが処理対
象物１７に衝突することにより、イオン２１の運動エネ
ルギ及び励起原子の化学的エネルギが処理対象物に与え
られ、表面処理が実行される。At this time, in the glow plasma, there are ions 21 traveling toward the object 17 to be processed and electrically floating radicals 22 which collide with the object 17 to be processed. As a result, the kinetic energy of the ions 21 and the chemical energy of excited atoms are given to the object to be processed, and the surface treatment is performed.
【０００４】[0004]
【発明が解決しようとする課題】しかるに、このような
従来技術によると、処理対象物１７の表面が弱い結合で
できている材質である場合には、イオン２１の衝突によ
る衝突エネルギによってこの結合が絶ち切られ、処理対
象物１７の表面が損傷を受けてしまうことがある。ま
た、プラズマ中に発生するイオン２１並びにラジカル２
２の両者の影響を処理対象物１７が同時に受けるが、こ
れらの影響を選択的に処理することができないため、例
えば一方の作用は有効であるが、他方の作用は有害な影
響を及ぼすような処理対象物には適用し得ないという不
都合がある。However, according to such a conventional technique, when the surface of the object to be treated 17 is made of a material having a weak bond, this bond is formed by the collision energy due to the collision of the ions 21. It may be cut off and the surface of the processing object 17 may be damaged. Also, the ions 21 and radicals 2 generated in the plasma
Although the object 17 to be processed is affected by both of the two effects at the same time, these effects cannot be selectively processed. Therefore, for example, one effect is effective but the other effect is harmful. There is an inconvenience that it cannot be applied to an object to be treated.
【０００５】また、安定したグロープラズマ放電を維持
するためには、一対の電極４０・４１間の領域４４にア
セトン等の添加ガスを加えたアルゴンガス若しくはヘリ
ウムガス等の放電開始電圧が低い雰囲気ガスを供給する
必要があるため（特開平２−２９４３６号公報参照）、
ヘリウムガスを使用するとこれが高価なためにランニン
グコストが嵩みがちとなり、アルゴンガスを使用する場
合は添加ガスを供給するためのガス供給系が複雑化する
という欠点があった。Further, in order to maintain a stable glow plasma discharge, an atmosphere gas having a low discharge starting voltage such as argon gas or helium gas to which an additive gas such as acetone is added in a region 44 between the pair of electrodes 40 and 41. Is required to be supplied (see Japanese Patent Laid-Open No. 29436/1990),
The use of helium gas tends to increase the running cost because it is expensive, and the use of argon gas has a drawback that the gas supply system for supplying the additive gas is complicated.
【０００６】更に、一対の電極４０・４１間に処理対象
物１７を配置する構成なので、処理対象物１７が両電極
４０・４１に接触する虞れが生じないようにするために
両電極４０・４１の間隔を広げざるを得ない。そのため
に放電領域が広くなってしまうので、グロープラズマ発
生可能なガスの種類が制限されてしまう。しかもより広
い範囲でガス雰囲気を高精度に保ち、かつ放電領域全体
で放電状態を安定に保とうとすると、ガスチャンバ等が
必要となるため、設備コストが高額になり、処理能力の
大型化が困難であった。Further, since the object to be treated 17 is arranged between the pair of electrodes 40 and 41, the object to be treated 17 is prevented from coming into contact with the electrodes 40 and 41. There is no choice but to widen the interval of 41. As a result, the discharge region becomes wider, and the types of gases that can generate glow plasma are limited. Moreover, in order to maintain the gas atmosphere in a wider range with high accuracy and to keep the discharge state stable in the entire discharge area, a gas chamber etc. is required, resulting in high equipment cost and difficulty in increasing the processing capacity. Met.
【０００７】本発明は、このような従来技術の不都合を
解消すべく案出されたものであり、その主な目的は、処
理対象物の表面近傍のイオン−ラジカル濃度比を制御可
能なようにして従来不可能であった材料の表面改質が可
能なように改良されたプラズマ表面処理装置を提供する
ことにある。The present invention was devised to eliminate such disadvantages of the prior art, and its main purpose is to make it possible to control the ion-radical concentration ratio near the surface of the object to be treated. It is another object of the present invention to provide an improved plasma surface treatment apparatus that enables surface modification of materials that has been impossible in the past.
【０００８】更に本発明の第２の目的は、ランニングコ
スト、設備費を低減することが可能なプラズマ表面処理
装置を提供することにある。A second object of the present invention is to provide a plasma surface treatment apparatus which can reduce running costs and equipment costs.
【０００９】[0009]
【課題を解決するための手段】このような目的は、本発
明によれば、グロープラズマを発生させて処理対象物の
表面性状を改質するためのプラズマ表面処理装置の構成
を、誘電体層を挟んで対向し、かつその一方が多孔状を
なす一対の電極と、前記一方の電極に対向配置された第
３の電極と、前記一対の電極間にプラズマ発生用交流電
圧を印加する交流電源装置と、前記一方の電極と前記第
３の電極との間の電位差を所定値に規定する手段と、前
記一方の電極の周囲にプラズマ発生可能な気体を供給す
るガス供給装置とを有し、前記一方の電極と前記第３の
電極との間に配置した処理対象物に表面処理を施すよう
にしてなるものとすることによって達成される。According to the present invention, the object of the present invention is to provide a structure of a plasma surface processing apparatus for generating glow plasma to modify the surface properties of an object to be processed. A pair of electrodes facing each other across the pair of electrodes and one of which is porous, a third electrode facing the one electrode, and an AC power supply for applying an AC voltage for plasma generation between the pair of electrodes. An apparatus, means for defining a potential difference between the one electrode and the third electrode to a predetermined value, and a gas supply apparatus for supplying a gas capable of generating plasma around the one electrode, This is achieved by subjecting the object to be treated arranged between the one electrode and the third electrode to the surface treatment.
【００１０】[0010]
【作用】この装置によれば、誘電体層を挟んだ一対の電
極間の特に多孔状電極周辺でグロープラズマが発生す
る。ここでグロープラズマ中に存在するイオンは多孔状
電極に吸収されるが、処理対象物を挟んで対向する多孔
状電極と第３の電極との間に電位差があると、多孔状電
極に吸収されなかったイオンが電位差の大きさに応じた
数および運動エネルギをもって処理対象物に衝突する。According to this device, glow plasma is generated between the pair of electrodes sandwiching the dielectric layer, especially around the porous electrode. Here, the ions present in the glow plasma are absorbed by the porous electrode, but if there is a potential difference between the porous electrode and the third electrode that face each other across the object to be treated, they are absorbed by the porous electrode. The non-existing ions collide with the object to be processed with a number and kinetic energy according to the magnitude of the potential difference.
【００１１】一方、プラズマ中に含まれる励起されたラ
ジカル原子は、電気的に中性なために多孔状電極周辺部
に広く存在し、多孔状電極と第３の電極との間の電位差
に無関係に処理対象物に到達する。従って、多孔状電極
と第３の電極との間の電位差を制御することにより、処
理対象物に到達するイオンの数および運動エネルギを制
御することができる。従って、イオンが有害な影響を及
ぼす処理対象物や、ある特定のイオン量あるいは衝突エ
ネルギでのみ処理が可能なような処理対象物に対して
も、プラズマによる表面改質処理が可能となる。On the other hand, the excited radical atoms contained in the plasma widely exist around the porous electrode because they are electrically neutral, and are unrelated to the potential difference between the porous electrode and the third electrode. To reach the object to be processed. Therefore, by controlling the potential difference between the porous electrode and the third electrode, it is possible to control the number of ions reaching the object to be processed and the kinetic energy. Therefore, it is possible to perform the surface modification treatment by plasma even on a processing target object that is adversely affected by the ions or a processing target object that can be processed only with a certain amount of ions or collision energy.
【００１２】更に、本装置によれば、グロープラズマ放
電は誘電体層を挟んだ一対の電極間で行われ、この間に
処理対象物が存在しないため、両電極と誘電体とを互い
に密着させることも可能である。従って、必要な放電領
域が非常に小さくなるため、放電可能なガスの種類が拡
大し、より安価なガスの使用が可能になる。これに加え
て、グロープラズマ放電は多孔状電極近傍のみに発生す
るため、雰囲気ガスの制御はこの近傍のみで行えば十分
であり、広い範囲での雰囲気ガス制御が不要となる。従
って、放電維持のためのガスチャンバ設備が不要とな
る。Further, according to the present apparatus, the glow plasma discharge is performed between the pair of electrodes sandwiching the dielectric layer, and there is no object to be treated between them, so that both electrodes and the dielectric should be in close contact with each other. Is also possible. Therefore, since the required discharge area is extremely small, the types of gas that can be discharged are expanded, and a cheaper gas can be used. In addition to this, since the glow plasma discharge is generated only in the vicinity of the porous electrode, it is sufficient to control the atmosphere gas only in this vicinity, and the atmosphere gas control in a wide range is unnecessary. Therefore, the gas chamber facility for maintaining the discharge becomes unnecessary.
【００１３】[0013]
【実施例】以下に添付の図面に示された具体的な実施例
に基づいて本発明の構成を詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of the present invention will be described in detail below with reference to specific embodiments shown in the accompanying drawings.
【００１４】図１は、本発明に基づくプラズマ表面処理
装置の基本構成を模式的に示している。第１の電極１と
第２の電極２は、誘電体４を挟んで対向し、第３の電極
３は、第２の電極２と所定の距離をおいて対向してい
る。これら各電極１・２・３は、金属などの良導体で形
成されている。なお、第１の電極１の放電面５は、平面
でも、溝加工あるいは微細な凹凸状の加工を施しても良
い。また第３の電極３は、第２の電極２との対向面を平
面とするのが一般的である。FIG. 1 schematically shows the basic structure of a plasma surface treatment apparatus according to the present invention. The first electrode 1 and the second electrode 2 face each other with the dielectric 4 sandwiched therebetween, and the third electrode 3 faces the second electrode 2 with a predetermined distance. Each of these electrodes 1, 2 and 3 is formed of a good conductor such as metal. The discharge surface 5 of the first electrode 1 may be a flat surface, grooved, or processed to have fine irregularities. In addition, the third electrode 3 generally has a flat surface facing the second electrode 2.
【００１５】第２の電極２は、図２に示すように網目状
をなしているが、これも網目状に限らず、平行線状、あ
るいは多孔状など、ガスが透過し得る構造を有する電極
であれば良い。The second electrode 2 has a mesh shape as shown in FIG. 2, but this is not limited to a mesh shape, and an electrode having a structure such as a parallel line shape or a porous shape through which a gas can pass. If it is good.
【００１６】誘電体４は、絶縁性が高い素材であれば特
に限定する必要はないが、ガラス若しくはマイカ等が適
している。また、第１・第２両電極１・２間でのアーク
放電を防止する目的から、両電極１・２の外形寸法より
も大きなサイズとするのが好ましい。なお、第１の電極
１、第２の電極２、及び誘電体４は、図１に於ては密着
しているが、必ずしも密着している必要はない。The dielectric 4 is not particularly limited as long as it is a material having a high insulating property, but glass or mica is suitable. Further, in order to prevent arc discharge between the first and second electrodes 1 and 2, it is preferable to make the size larger than the outer dimensions of both electrodes 1 and 2. Although the first electrode 1, the second electrode 2, and the dielectric 4 are in close contact with each other in FIG. 1, they are not necessarily in close contact with each other.
【００１７】第１の電極１並びに第２の電極２には、交
流電源１０が接続されており、両電極１・２間に交流電
圧が印加されるようになっている。また第２の電極２並
びに第３の電極３には、直流定電圧電源１１が接続され
ている。なお、この定電圧電源電源は、交流電源とする
こともできる。そして第２の電極２は接地されている。An AC power supply 10 is connected to the first electrode 1 and the second electrode 2 so that an AC voltage is applied between both electrodes 1 and 2. A DC constant voltage power source 11 is connected to the second electrode 2 and the third electrode 3. The constant voltage power supply may be an AC power supply. The second electrode 2 is grounded.
【００１８】第２の電極２と第３の電極３間には、直流
定電圧電源１１の電圧に応じて一定の電位差が与えられ
る。この電圧値を制御することにより、第２の電極２の
周囲から第３の電極３へ到達するイオンの量並びに衝突
エネルギを制御することができる。A constant potential difference is applied between the second electrode 2 and the third electrode 3 according to the voltage of the DC constant voltage power supply 11. By controlling this voltage value, the amount of ions reaching the third electrode 3 from the periphery of the second electrode 2 and the collision energy can be controlled.
【００１９】第２の電極２の周囲には、大気圧下でのグ
ロープラズマ発生に不可欠なヘリウム、アルゴン、或い
は窒素などの雰囲気ガス１２と、添加ガス１３とが、表
面処理の目的に応じて適宜に選択されて供給される。こ
れらのガス１２・１３は、混合流量制御器１４にて流量
比を制御され、かつガス導入部１５を通じて第２の電極
２の近傍に導入される。An ambient gas 12 such as helium, argon, or nitrogen, which is indispensable for generating glow plasma under atmospheric pressure, and an additive gas 13 are provided around the second electrode 2 depending on the purpose of surface treatment. It is appropriately selected and supplied. The flow rates of these gases 12 and 13 are controlled by the mixing flow rate controller 14, and they are introduced into the vicinity of the second electrode 2 through the gas introducing section 15.
【００２０】処理内容が空気中との隔離を特に厳しく要
求される処理対象物に対しては、電極の周囲にチャンバ
１６を設置すると良い。チャンバを設けない場合であっ
ても、第２の電極２の近傍に供給するガス１２・１３の
量によってはグロー放電が可能である。A chamber 16 may be installed around the electrode for the object to be processed whose processing content is particularly strictly required to be separated from the air. Even when the chamber is not provided, glow discharge can be performed depending on the amount of the gas 12.sup.13 supplied to the vicinity of the second electrode 2.
【００２１】処理対象物１７は、高分子材料、金属材料
等が供され、第２の電極２と第３の電極３との間に配置
される。なお、処理対象物１７が良導電性の金属材料ま
たは金属上に塗布または接着された高分子材料などの場
合には、この処理対象物１７を第３の電極３と代替して
使用することも可能であるが、原理的にはここで示す方
法と全く同様である。The object 17 to be treated is provided with a polymer material, a metal material or the like, and is disposed between the second electrode 2 and the third electrode 3. When the object 17 to be processed is a metal material having good conductivity or a polymer material coated or adhered to a metal, the object 17 to be processed may be used in place of the third electrode 3. It is possible, but in principle, it is exactly the same as the method shown here.
【００２２】本発明装置に於ける第２の電極２と第３の
電極３とが同電位の場合の表面処理の様子を図３に示
す。なお、第２の電極２と第３の電極３とを同電位にす
る場合には、両電極を共に接地しても良い。第１の電極
１と第２の電極２との間に交流電源１０から印加される
交流電圧により、第２の電極２の周囲にグロープラズマ
２０が発生し、イオン２１とラジカル２２とが混在した
雰囲気となる。このうちイオン２１は、第２の電極２と
第３の電極３との間が同電位の場合には、殆どが第２の
電極２に吸収されるため、概ねラジカル２２のみが存在
する領域２３が第２の電極２の下面に生成される。従っ
て、この領域２３に接している処理対象物１７の表面で
はラジカル２２の持つ励起エネルギを吸収する一方であ
り、イオン２１の衝突によるエッチングは発生せず、イ
オンエッチング性の高い物質でも、エッチングされるこ
となく表面改質反応を起こさせることが可能である。FIG. 3 shows the state of the surface treatment when the second electrode 2 and the third electrode 3 in the device of the present invention have the same potential. When the second electrode 2 and the third electrode 3 have the same potential, both electrodes may be grounded. The glow plasma 20 is generated around the second electrode 2 by the AC voltage applied from the AC power supply 10 between the first electrode 1 and the second electrode 2, and the ions 21 and the radicals 22 are mixed. It becomes an atmosphere. Of the ions 21, most of the ions 21 are absorbed by the second electrode 2 when the second electrode 2 and the third electrode 3 have the same potential, so that the region 23 where only the radicals 22 are present is present. Are generated on the lower surface of the second electrode 2. Therefore, the surface of the processing object 17 that is in contact with the region 23 only absorbs the excitation energy of the radicals 22, and the etching due to the collision of the ions 21 does not occur, and even a substance having a high ion etching property is etched. It is possible to cause a surface modification reaction without causing a change.
【００２３】直流定電圧電源１１の電圧を変化させた場
合の第２の電極２と第３の電極３との間の実効電流を計
測した結果を図４に示す。第２の電極２と第３の電極３
との間の電流は、この間を移動するイオン量に対応して
いるので、第２の電極２の周囲から第３の電極３へ到達
するイオン量が電圧の変化によって制御されていること
が分かる。FIG. 4 shows the result of measurement of the effective current between the second electrode 3 and the third electrode 3 when the voltage of the DC constant voltage power supply 11 is changed. Second electrode 3 and third electrode 3
Since the current between and corresponds to the amount of ions moving between them, it can be seen that the amount of ions reaching the third electrode 3 from around the second electrode 2 is controlled by the change in voltage. .
【００２４】尚、上記実験のための装置は、第１の電極
１および第３の電極３に放電面側が平面とされた直径５
０mm、厚さ１０mmのステンレス製の円板を、第２の電極
２に３mm格子のステンレス金網を切り出した直径５０mm
の円板を、誘電体４に厚さ２mmのガラス板をそれぞれ使
用し、第２の電極２と第３の電極３との間隔は３mmとし
た。そして交流電源１０として、１３．５６ＭＨｚ、５
００Ｗの出力を発生する装置を用い、直流定電圧電源１
１の出力を±１０Ｖの範囲で変化させた。また雰囲気ガ
ス１２としてヘリウムガスを１０ＳＣＭの割合で電極部
へ導入し、添加ガス１３は使用しないものとした。The device for the above-mentioned experiment was designed so that the first electrode 1 and the third electrode 3 had a diameter 5 of which the discharge surface side was flat.
A stainless steel disk with a thickness of 0 mm and a thickness of 10 mm is cut out from a stainless wire mesh of 3 mm grid on the second electrode 2 to have a diameter of 50 mm.
And a glass plate having a thickness of 2 mm was used as the dielectric 4, and the distance between the second electrode 2 and the third electrode 3 was 3 mm. And as the AC power source 10, 13.56 MHz, 5
DC constant voltage power supply 1 using a device that generates an output of 00W
The output of No. 1 was changed in the range of ± 10V. Helium gas was introduced into the electrode portion at a ratio of 10 SCM as the atmosphere gas 12, and the additive gas 13 was not used.
【００２５】次にポリエステル塗料の表面性状の改質を
行った結果を図５に示す。本例に於ては、厚さ０．５mm
の鉄板のベースに塗布した塗料の表面耐汚染性の向上を
目的として実施した。ここで塗料の表面汚染性の評価
は、油性赤色マジックにて汚染を行い、２４時間後にエ
タノールで汚染を拭き取った後の残汚染の程度を４段階
評価する方法を採った。◎は残痕が全くない場合、×は
拭き取り前と同程度の残痕がある場合を表し、その間を
更に○及び△の２段階に分けて評価を行った。Next, the results of modifying the surface properties of the polyester coating are shown in FIG. In this example, the thickness is 0.5 mm
It was carried out for the purpose of improving the surface stain resistance of the coating material applied to the base of the iron plate. Here, for the evaluation of the surface stain resistance of the paint, a method was used in which the stain was carried out with an oily red marker and the degree of residual stain after the stain was wiped off with ethanol after 24 hours was evaluated in four levels. ⊚ indicates that there are no residual marks, and × indicates that there are the same residual marks as before wiping, and the interval is further divided into two grades, ◯ and Δ, for evaluation.
【００２６】図１に示した本発明の装置構成の条件を以
下のように設定して処理を行った結果を曲線３０に示
す。A curve 30 shows the result of processing by setting the conditions of the apparatus configuration of the present invention shown in FIG. 1 as follows.
【００２７】第１の電極１に直径４０mm、厚さ８mmのス
テンレス製円板を、第３の電極３に４０mm×６０mm、厚
さ８mmのステンレス製平板を、第２の電極２に４０mm×
４０mm、２．５mm格子のステンレス製金網を、誘電体４
に５０mm×５０mm、厚さ２mmのガラス板をそれぞれ使用
し、第２の電極２と第３の電極３との間隔は３mmとし
た。そして交流電源１０として、４００ＫＨｚ、３００
Ｗの出力を発生する装置を用い、直流定電圧電源１１は
０Ｖに固定した。The first electrode 1 is a stainless steel disk having a diameter of 40 mm and a thickness of 8 mm, the third electrode 3 is a 40 mm × 60 mm stainless steel plate having a thickness of 8 mm, and the second electrode 2 is a 40 mm × 40 mm ×.
40mm, 2.5mm lattice stainless steel wire mesh, dielectric 4
A glass plate having a size of 50 mm × 50 mm and a thickness of 2 mm was used, and the distance between the second electrode 2 and the third electrode 3 was 3 mm. Then, as the AC power source 10, 400 KHz, 300
A DC constant voltage power supply 11 was fixed at 0 V by using a device for generating W output.
【００２８】曲線３１は、図７に示した従来の装置構成
の条件を以下のように設定して処理を行った結果を示
す。A curve 31 shows the result of processing by setting the conditions of the conventional apparatus configuration shown in FIG. 7 as follows.
【００２９】上部電極４０に直径４０mm、厚さ８mmのス
テンレス製円板を、下部電極４１に４０mm×６０mm、厚
さ８mmのステンレス製平板を、誘電体４２に５０mm×５
０mm、厚さ２mmのガラス板をそれぞれ使用し、下部電極
４１と誘電体４２との間隔は３mmとした。交流電源４３
は、４００ＫＨｚ、３００Ｗの出力の装置を用いた。The upper electrode 40 is a stainless disk having a diameter of 40 mm and a thickness of 8 mm, the lower electrode 41 is a 40 mm × 60 mm stainless plate having a thickness of 8 mm, and the dielectric 42 is a 50 mm × 5 plate.
A glass plate having a thickness of 0 mm and a thickness of 2 mm was used, and the distance between the lower electrode 41 and the dielectric 42 was 3 mm. AC power supply 43
Used a device with an output of 400 KHz and 300 W.
【００３０】本発明装置にて処理を行った結果（曲線３
０）を見ると、処理時間と共に架橋重合反応が進行し、
耐汚染性が向上していることが明瞭に分かる。一方、従
来装置による処理結果（曲線３１）を見ると、エッチン
グ効果の影響によって表面汚損が起こり、架橋重合反応
などによって生ずるはずの改善効果は打ち消されてしま
い、処理時間の延長に伴って耐汚染性が低下することが
分かる。従って、本発明装置を用いれば、従来装置では
処理できなかったポリエステル塗料の耐汚染性向上処理
をもイオン量の制御によって行い得ることが分かる。Results of processing with the device of the present invention (curve 3
Looking at 0), the cross-linking polymerization reaction proceeds with the treatment time,
It can be clearly seen that the stain resistance is improved. On the other hand, when looking at the treatment result (curve 31) by the conventional apparatus, surface contamination occurs due to the effect of the etching effect, and the improvement effect that should be caused by the cross-linking polymerization reaction is canceled, and the contamination resistance increases with the extension of the treatment time. It can be seen that the sex decreases. Therefore, it can be seen that by using the device of the present invention, the stain resistance improving treatment of the polyester coating which could not be treated by the conventional device can be performed by controlling the amount of ions.
【００３１】図６の曲線３２は、本発明装置に於て、直
流定電圧電源１１の電圧を変化させた場合に上記した評
価方法による耐汚染性評価が×の状態になるまでに要し
た処理時間を示すものである。即ち、イオン２１の影響
によって表面がエッチングされる度合いを示している。
このことから、第２の電極２と第３の電極３との間の電
位差によってイオン２１の影響を制御することができ、
表面の損傷を抑制し得ることが分かる。従って、本発明
装置を用いれば、特に点線３３から左側の領域で処理を
行えば、表面の損傷を生ずることなく所望の処理効果が
発現するまでの任意の処理時間でプラズマ表面処理の実
行が可能となる。The curve 32 in FIG. 6 is the process required until the pollution resistance evaluation by the above-mentioned evaluation method becomes "x" when the voltage of the DC constant voltage power supply 11 is changed in the device of the present invention. It indicates time. That is, it indicates the degree to which the surface is etched due to the influence of the ions 21.
From this, the influence of the ions 21 can be controlled by the potential difference between the second electrode 2 and the third electrode 3,
It can be seen that surface damage can be suppressed. Therefore, when the apparatus of the present invention is used, the plasma surface treatment can be performed in an arbitrary treatment time until the desired treatment effect is exhibited without causing surface damage, particularly when the treatment is performed in the region on the left side of the dotted line 33. Becomes
【００３２】[0032]
【表１】 [Table 1]
【００３３】表１は、本発明装置並びに従来装置にて放
電可能なガスの一覧表である。放電可能であったものを
○、放電不可能であったものを×で示す。従来装置で
は、ヘリウム単体の雰囲気下では放電可能であるが、ア
ルゴン単体並びに窒素単体の雰囲気下での放電は不可能
であり、アルゴンについては、メタン並びにアセトンの
添加物を加えた場合にのみ放電が可能であった。Table 1 is a list of gases that can be discharged by the device of the present invention and the conventional device. Those that could be discharged are indicated by ◯, and those that could not be discharged are indicated by x. In the conventional device, it is possible to discharge in an atmosphere of helium simple substance, but it is not possible to discharge in an atmosphere of argon simple substance and nitrogen simple substance. Was possible.
【００３４】これに対し、本発明装置では、アルゴン単
体並びに窒素単体の雰囲気下での放電も可能である。従
って、表面処理を行う際に従来装置ではメタン或いはア
セトンが悪影響を及ぼすような表面処理に対しては高価
なヘリウムガスを用いざるを得なかったが、本発明装置
によれば、安価なアルゴンガスや窒素ガスに、フッ素ガ
ス、アンモニア、酸素、および二酸化炭素などを添加し
て所望の表面処理を実施することが可能となるため、表
面処理実施時のランニングコストを大きく低減すること
ができる。On the other hand, in the device of the present invention, it is possible to perform discharge under the atmosphere of argon alone and nitrogen alone. Therefore, when performing the surface treatment, the conventional apparatus had to use expensive helium gas for the surface treatment in which methane or acetone adversely affected, but according to the apparatus of the present invention, inexpensive argon gas is used. Since it becomes possible to carry out a desired surface treatment by adding fluorine gas, ammonia, oxygen, carbon dioxide or the like to nitrogen gas or nitrogen gas, the running cost at the time of carrying out the surface treatment can be greatly reduced.
【００３５】[0035]
【発明の効果】このように本発明によれば、イオンの効
果を制御して励起原子の持つ化学的エネルギを選択的に
利用したプラズマ表面処理が可能なため、表面分子の結
合状態が弱く、エッチングされ易い材料の表面性状の改
質が可能となる。従って、プラズマ表面処理の適用範囲
が大幅に拡大する。また、ガスチャンバの簡素化、プラ
ズマ発生のためのガス費用の削減が達成できる。As described above, according to the present invention, it is possible to perform plasma surface treatment by controlling the effect of ions and selectively utilizing the chemical energy of excited atoms, so that the bonding state of surface molecules is weak. It is possible to modify the surface properties of the material that is easily etched. Therefore, the applicable range of the plasma surface treatment is greatly expanded. In addition, simplification of the gas chamber and reduction of gas cost for plasma generation can be achieved.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明装置の全体構成を示す模式図。FIG. 1 is a schematic diagram showing the overall configuration of a device of the present invention.
【図２】第２の電極の平面図。FIG. 2 is a plan view of a second electrode.
【図３】本発明装置による表面処理の様子を示す模式
図。FIG. 3 is a schematic view showing a state of surface treatment by the device of the present invention.
【図４】直流定電圧電源の電圧変化と第２・第３の電極
間の実行電流との関係線図。FIG. 4 is a relationship diagram of a voltage change of a DC constant voltage power supply and an execution current between second and third electrodes.
【図５】処理時間と耐汚染性の評価との関係線図。FIG. 5 is a diagram showing the relationship between processing time and evaluation of stain resistance.
【図６】直流定電圧電源の電圧変化と耐汚染性評価が×
の状態になるまでに要した処理時間との関係線図。[Figure 6] Voltage change of DC constant voltage power supply and contamination resistance evaluation
A relational diagram with the processing time required to reach the state.
【図７】従来装置の全体構成を示す模式図。FIG. 7 is a schematic diagram showing the overall configuration of a conventional device.
１ 第１の電極 ２ 第２の電極 ３ 第３の電極 ４ 誘電体 ５ 放電面 １０ 交流電源 １１ 直流定電圧電源 １２ 雰囲気ガス １３ 添加ガス １４ 混合流量制御器 １５ ガス導入部 １６ チャンバ １７ 処理対象物 ２０ グロープラズマ ２１ イオン ２２ ラジカル ２３ 領域 ３０・３１・３２ 曲線 ３３ 点線 ４０ 上部電極 ４１ 下部電極 ４２ 誘電体 ４３ 交流電源 ４４ 領域 DESCRIPTION OF SYMBOLS 1 1st electrode 2 2nd electrode 3 3rd electrode 4 Dielectric 5 Discharge surface 10 AC power supply 11 DC constant voltage power supply 12 Atmosphere gas 13 Additive gas 14 Mixing flow controller 15 Gas introduction part 16 Chamber 17 Processing object 20 Glow Plasma 21 Ion 22 Radical 23 Region 30 ・ 31 ・ 32 Curve 33 Dotted Line 40 Upper Electrode 41 Lower Electrode 42 Dielectric 43 AC Power Supply 44 Region
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小駒 益弘 埼玉県和光市下新倉843−15 (56)参考文献 特開 昭54−50440（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masuhiro Ogoma 843-15 Shimoshinkura, Wako-shi, Saitama (56) References JP-A-54-50440 (JP, A)
Claims (1)
の表面性状を改質するためのプラズマ表面処理装置であ
って、 誘電体層を挟んで対向し、かつその一方が多孔状をなす
一対の電極と、 前記一方の電極に対向配置された第３の電極と、 前記一対の電極間にプラズマ発生用交流電圧を印加する
交流電源装置と、 前記一方の電極と前記第３の電極との間の電位差を所定
値に規定する手段と、 前記一方の電極の周囲にプラズマ発生可能な気体を供給
するガス供給装置とを有し、 前記一方の電極と前記第３の電極との間に配置した処理
対象物に表面処理を施すようにしてなることを特徴とす
るプラズマ表面処理装置。1. A plasma surface treatment apparatus for generating a glow plasma to modify the surface texture of an object to be treated, comprising a pair of opposing surfaces sandwiching a dielectric layer, one of which is porous. An electrode, a third electrode arranged to face the one electrode, an AC power supply device that applies an AC voltage for plasma generation between the pair of electrodes, and between the one electrode and the third electrode And a gas supply device that supplies a gas capable of generating plasma to the periphery of the one electrode, and is disposed between the one electrode and the third electrode. A plasma surface treatment apparatus, characterized in that a surface treatment is performed on an object to be treated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4220795A JP2524942B2 (en) | 1992-07-27 | 1992-07-27 | Plasma surface treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4220795A JP2524942B2 (en) | 1992-07-27 | 1992-07-27 | Plasma surface treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0649243A JPH0649243A (en) | 1994-02-22 |
| JP2524942B2 true JP2524942B2 (en) | 1996-08-14 |
Family
ID=16756690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4220795A Expired - Fee Related JP2524942B2 (en) | 1992-07-27 | 1992-07-27 | Plasma surface treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2524942B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9232625B2 (en) | 2014-03-18 | 2016-01-05 | Ricoh Company, Ltd. | Inverter device, plasma generator apparatus and control method |
| US9467071B2 (en) | 2014-09-17 | 2016-10-11 | Ricoh Company, Ltd. | Voltage resonant inverter, control method, and surface treatment device |
| US9819280B2 (en) | 2015-02-19 | 2017-11-14 | Ricoh Company, Ltd. | Inverter device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3577601B2 (en) * | 1993-09-20 | 2004-10-13 | 株式会社ダイオー | Atmospheric pressure glow discharge plasma treatment method |
| JPH09208726A (en) * | 1996-02-02 | 1997-08-12 | Sekisui Chem Co Ltd | Surface treatment of substrate utilizing plasma |
| JP3040358B2 (en) * | 1996-05-24 | 2000-05-15 | 積水化学工業株式会社 | Glow discharge plasma processing method and apparatus |
| JP3599148B2 (en) * | 1996-08-19 | 2004-12-08 | 泰宣 井上 | Plasma generating method, plasma generating apparatus and plasma generating element |
| JP4141803B2 (en) * | 2002-11-05 | 2008-08-27 | シャープ株式会社 | Plasma processing equipment |
| ATE362648T1 (en) * | 2003-08-14 | 2007-06-15 | Fuji Film Mfg Europ B V | ARRANGEMENT, METHOD AND ELECTRODE FOR GENERATING A PLASMA |
| EP1582270A1 (en) * | 2004-03-31 | 2005-10-05 | Vlaamse Instelling voor Technologisch Onderzoek | Method and apparatus for coating a substrate using dielectric barrier discharge |
| JP2012131147A (en) * | 2010-12-22 | 2012-07-12 | Seiko Epson Corp | Plasma device, method for forming polymerized film and modifying its surface, nozzle plate, inkjet head, and inkjet printer |
-
1992
- 1992-07-27 JP JP4220795A patent/JP2524942B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9232625B2 (en) | 2014-03-18 | 2016-01-05 | Ricoh Company, Ltd. | Inverter device, plasma generator apparatus and control method |
| US9467071B2 (en) | 2014-09-17 | 2016-10-11 | Ricoh Company, Ltd. | Voltage resonant inverter, control method, and surface treatment device |
| US9819280B2 (en) | 2015-02-19 | 2017-11-14 | Ricoh Company, Ltd. | Inverter device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0649243A (en) | 1994-02-22 |
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