JP2024062907A - 表示パネル及びその製造方法、表示装置 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000010409 thin film Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000010410 layer Substances 0.000 claims description 196
- 239000011229 interlayer Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 27
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 238000000206 photolithography Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
- 238000010586 diagram Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 8
- 230000000149 penetrating effect Effects 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
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Abstract
Description
前記表示パネルは、
基板と、
前記基板上に設けられ、前記ソースと前記ドレインを含む第一金属層と、
前記第一金属層の前記基板から離れた側に設けられ、導体サブ層と半導体サブ層を含む前記活性部を含む活性層と、を更に含み、
前記導体サブ層は、間隔をおいて設けられる第一導体サブ部と第二導体サブ部を含み、前記半導体サブ層は、少なくとも前記第一導体サブ部と前記第二導体サブ部の間に接続される表示パネルを更に提供する。
前記第三金属層は、第一電極部材を含み、前記第一電極部材は、前記層間誘電体層を貫通して前記薄膜トランジスタに電気的に接続される。
前記表示パネルの製造方法は、
基板を提供するステップと、
前記基板上に第一金属層を形成するステップであって、前記第一金属層は、前記ソースと前記ドレインを含むステップと、
前記第一金属層の前記基板から離れた側に活性層を形成するステップであって、前記活性層は、導体サブ層と半導体サブ層を含む前記活性部を含み、前記導体サブ層は、間隔をおいて設けられる第一導体サブ部と第二導体サブ部を含み、前記半導体サブ層は、少なくとも前記第一導体サブ部と前記第二導体サブ部の間に接続されるステップと、を含む表示パネルの製造方法を更に提供する。
Claims (13)
- 表示パネルであって、前記表示パネルは、薄膜トランジスタを含み、前記薄膜トランジスタは、活性部及び前記活性部と重なり合うソースとドレインを含み、
前記表示パネルは、
基板と、
前記基板上に設けられ、前記ソースと前記ドレインを含む第一金属層と、
前記第一金属層の前記基板から離れた側に設けられ、導体サブ層と半導体サブ層を含む前記活性部を含む活性層と、を更に含み、
前記導体サブ層は、間隔をおいて設けられる第一導体サブ部と第二導体サブ部を含み、前記半導体サブ層は、少なくとも前記第一導体サブ部と前記第二導体サブ部の間に接続されることを特徴とする表示パネル。 - 前記活性部は、ソースコンタクト領域、ドレインコンタクト領域及び前記ソースコンタクト領域と前記ドレインコンタクト領域の間に位置するチャネル領域を含み、前記導体サブ層は、前記第一導体サブ部と前記第二導体サブ部の間に設けられ、前記チャネル領域内に位置する分断溝を更に含み、且つ前記半導体サブ層は、少なくとも前記分断溝内に充填されることを特徴とする請求項1に記載の表示パネル。
- 前記第一導体サブ部は、前記ソースコンタクト領域まで延在し、前記第二導体サブ部は、前記ドレインコンタクト領域まで延在し、且つ前記ソースは、前記ソースコンタクト領域内に位置する前記第一導体サブ部に電気的に接続され、前記ドレインは、前記ドレインコンタクト領域内に位置する前記第二導体サブ部に電気的に接続されることを特徴とする請求項2に記載の表示パネル。
- 前記分断溝の第一方向に沿った長さは、前記ソースコンタクト領域と前記ドレインコンタクト領域の間の間隔より小さく、前記第一方向は、前記ソースコンタクト領域が前記ドレインコンタクト領域を向く方向であることを特徴とする請求項2に記載の表示パネル。
- 前記分断溝の前記第一方向に沿った長さは、3μm以下であることを特徴とする請求項4に記載の表示パネル。
- 前記薄膜トランジスタは、ゲートを更に含み、前記表示パネルは、前記活性層の前記第一金属層から離れた側に設けられる第二金属層を更に含み、且つ前記第二金属層は、前記ゲートを含み、前記ゲートは、前記活性部の前記基板から離れた側に位置し、前記分断溝の前記基板上の正投影は、前記ゲートの前記基板上の正投影がカバーする範囲内に位置することを特徴とする請求項2に記載の表示パネル。
- 前記表示パネルは、前記活性層の前記基板から離れた側に設けられる層間誘電体層及び第三金属層を更に含み、前記層間誘電体層は、前記活性層及び前記第二金属層を覆い、前記第三金属層は、前記層間誘電体層の前記第二金属層から離れた側に位置し、
前記第三金属層は、第一電極部材を含み、前記第一電極部材は、前記層間誘電体層を貫通して前記薄膜トランジスタに電気的に接続されることを特徴とする請求項6に記載の表示パネル。 - 前記分断溝の前記基板上の正投影は、前記第一電極部材の前記基板上の正投影がカバーする範囲内に位置することを特徴とする請求項7に記載の表示パネル。
- 前記表示パネルは、前記層間誘電体層と前記第三金属層の間に設けられる水・酸素バリア層を更に含み、且つ前記分断溝の前記基板上の正投影は、前記水・酸素バリア層の前記基板上の正投影がカバーする範囲内に位置することを特徴とする請求項7に記載の表示パネル。
- 前記第一金属層は、遮光部を更に含み、且つ前記遮光部は、前記活性部と前記基板の間に位置することを特徴とする請求項1に記載の表示パネル。
- 前記ソースの一端は、前記活性部に接続され、他端は、前記遮光部に接続され、且つ前記ソースの材料と前記遮光部の材料は同じであることを特徴とする請求項10に記載の表示パネル。
- 表示パネルの製造方法であって、前記表示パネルは、薄膜トランジスタを含み、前記薄膜トランジスタは、活性部及び前記活性部と重なり合うソースとドレインを含み、
前記表示パネルの製造方法は、
基板を提供するステップと、
前記基板上に第一金属層を形成するステップであって、前記第一金属層は、前記ソースと前記ドレインを含むステップと、
前記第一金属層の前記基板から離れた側に活性層を形成するステップであって、前記活性層は、導体サブ層と半導体サブ層を含む前記活性部を含み、前記導体サブ層は、間隔をおいて設けられる第一導体サブ部と第二導体サブ部を含み、前記半導体サブ層は、少なくとも前記第一導体サブ部と前記第二導体サブ部の間に接続されるステップと、を含むことを特徴とする表示パネルの製造方法。 - 請求項1から11のいずれか一項に記載の表示パネルと、装置本体と、を含み、且つ前記表示パネルは、前記装置本体と一体に組み合わせられることを特徴とする表示装置。
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CN101356652B (zh) | 2006-06-02 | 2012-04-18 | 日本财团法人高知县产业振兴中心 | 包括由氧化锌构成的氧化物半导体薄膜层的半导体器件及其制造方法 |
JP5480554B2 (ja) | 2008-08-08 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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CN203674211U (zh) | 2013-12-19 | 2014-06-25 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
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JP2018022879A (ja) | 2016-07-20 | 2018-02-08 | 株式会社リコー | 電界効果型トランジスタ、及びその製造方法、並びに表示素子、画像表示装置、及びシステム |
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CN110649044B (zh) * | 2019-09-30 | 2022-02-25 | 厦门天马微电子有限公司 | 阵列基板及其制作方法、显示面板和显示装置 |
CN111312732B (zh) * | 2020-03-04 | 2024-04-12 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板及其制作方法、显示模组及电子装置 |
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CN113270424B (zh) * | 2021-05-13 | 2022-07-29 | Tcl华星光电技术有限公司 | 显示面板及其制备方法 |
CN113363329A (zh) * | 2021-06-04 | 2021-09-07 | 华南理工大学 | 一种薄膜晶体管以及薄膜晶体管的制备方法 |
CN113594223B (zh) * | 2021-07-30 | 2023-09-05 | Tcl华星光电技术有限公司 | 有机发光显示装置及制作方法 |
CN114883343B (zh) * | 2022-04-21 | 2024-03-26 | 北海惠科光电技术有限公司 | 薄膜晶体管、显示基板和薄膜晶体管的制备方法 |
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