JP2023501896A - 原子層堆積により堆積されたハフニウムアルミニウム酸化物コーティング - Google Patents
原子層堆積により堆積されたハフニウムアルミニウム酸化物コーティング Download PDFInfo
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- JP2023501896A JP2023501896A JP2022523433A JP2022523433A JP2023501896A JP 2023501896 A JP2023501896 A JP 2023501896A JP 2022523433 A JP2022523433 A JP 2022523433A JP 2022523433 A JP2022523433 A JP 2022523433A JP 2023501896 A JP2023501896 A JP 2023501896A
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- hafnium
- aluminum
- mol
- corrosion resistant
- aluminum oxide
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- 238000000576 coating method Methods 0.000 title claims abstract description 221
- 239000011248 coating agent Substances 0.000 title claims abstract description 172
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 107
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 230000007797 corrosion Effects 0.000 claims abstract description 128
- 238000005260 corrosion Methods 0.000 claims abstract description 128
- 238000000034 method Methods 0.000 claims abstract description 66
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 239000002243 precursor Substances 0.000 claims description 85
- 229910052782 aluminium Inorganic materials 0.000 claims description 63
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 62
- 229910052735 hafnium Inorganic materials 0.000 claims description 45
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 45
- 238000012360 testing method Methods 0.000 claims description 43
- 229910052760 oxygen Inorganic materials 0.000 claims description 39
- 239000001301 oxygen Substances 0.000 claims description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 37
- 239000007789 gas Substances 0.000 claims description 30
- 239000000376 reactant Substances 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 28
- 238000012545 processing Methods 0.000 claims description 27
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 16
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 12
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 12
- 238000007654 immersion Methods 0.000 claims description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 230000036961 partial effect Effects 0.000 claims description 5
- 239000007983 Tris buffer Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 claims description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 3
- IUNSCQXGSVFKQT-UHFFFAOYSA-N CC1(C=CC=C1)C(OC[Hf])C1(C=CC=C1)C Chemical compound CC1(C=CC=C1)C(OC[Hf])C1(C=CC=C1)C IUNSCQXGSVFKQT-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 claims description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 2
- VBCSQFQVDXIOJL-UHFFFAOYSA-N diethylazanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VBCSQFQVDXIOJL-UHFFFAOYSA-N 0.000 claims description 2
- BFIMXCBKRLYJQO-UHFFFAOYSA-N ethanolate;hafnium(4+) Chemical compound [Hf+4].CC[O-].CC[O-].CC[O-].CC[O-] BFIMXCBKRLYJQO-UHFFFAOYSA-N 0.000 claims description 2
- GCPCLEKQVMKXJM-UHFFFAOYSA-N ethoxy(diethyl)alumane Chemical compound CCO[Al](CC)CC GCPCLEKQVMKXJM-UHFFFAOYSA-N 0.000 claims description 2
- WZVIPWQGBBCHJP-UHFFFAOYSA-N hafnium(4+);2-methylpropan-2-olate Chemical compound [Hf+4].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-].CC(C)(C)[O-] WZVIPWQGBBCHJP-UHFFFAOYSA-N 0.000 claims description 2
- 239000008240 homogeneous mixture Substances 0.000 claims description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 claims description 2
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 claims description 2
- BSTQZSKPQICLPX-UHFFFAOYSA-N CC1(C=CC=C1)[Hf](C)(C)C1(C=CC=C1)C Chemical compound CC1(C=CC=C1)[Hf](C)(C)C1(C=CC=C1)C BSTQZSKPQICLPX-UHFFFAOYSA-N 0.000 claims 1
- 229910003865 HfCl4 Inorganic materials 0.000 claims 1
- CMPSFTFHQOLFAJ-UHFFFAOYSA-N carbanide;cyclopenta-1,3-diene;hafnium(4+) Chemical group [CH3-].[CH3-].[Hf+4].C1C=CC=[C-]1.C1C=CC=[C-]1 CMPSFTFHQOLFAJ-UHFFFAOYSA-N 0.000 claims 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 67
- 210000002381 plasma Anatomy 0.000 description 60
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 51
- 230000008569 process Effects 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 229910001220 stainless steel Inorganic materials 0.000 description 28
- 239000010935 stainless steel Substances 0.000 description 28
- 239000000758 substrate Substances 0.000 description 22
- 239000000872 buffer Substances 0.000 description 19
- 229910052736 halogen Inorganic materials 0.000 description 15
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 13
- 230000003628 erosive effect Effects 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 150000002367 halogens Chemical class 0.000 description 11
- 238000011109 contamination Methods 0.000 description 10
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- 239000002245 particle Substances 0.000 description 10
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- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 8
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 229910052593 corundum Inorganic materials 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
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- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 4
- 229910052794 bromium Inorganic materials 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
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- -1 halogen ions Chemical class 0.000 description 4
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- 229910017083 AlN Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- 230000003993 interaction Effects 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
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- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
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- 238000004627 transmission electron microscopy Methods 0.000 description 2
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- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
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- 229910052684 Cerium Inorganic materials 0.000 description 1
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- 229910052691 Erbium Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
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- 229910003910 SiCl4 Inorganic materials 0.000 description 1
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- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 1
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- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
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- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- C—CHEMISTRY; METALLURGY
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- C23C16/45523—Pulsed gas flow or change of composition over time
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Abstract
Description
ラザフォード後方散乱/X線蛍光(RBS/XRF)膜ストイキオメトリを使用して、ALDによって堆積された2つのハフニウムアルミニウム酸化物コーティング中のHf、Al及びOの原子濃度は、膜の深さを通して一定(即ち、膜の深さを通して均質)であることが決定された。表1は、2つのハフニウムアルミニウム酸化物コーティングのハフニウム、アルミニウム、及び酸素の原子濃度を示している。
ALDによって堆積された2つのハフニウムアルミニウム酸化物コーティングの耐腐食性を、孔食試験に基づき、ALDによって堆積された酸化アルミニウムコーティングの耐腐食性と比較した。以下の4つの試料を比較した:2a)コーティングされていないステンレス鋼の電解研磨された316Lの試料片、2b)ALDによって堆積された約100nmのHfAl2O5コーティングでコーティングされた、ステンレス鋼の電解研磨された316Lの試料片、2c)ALDによって堆積された約100nmのHf2Al2O7コーティングでコーティングされた、ステンレス鋼の電解研磨された316Lの試料片、及び2d)ALDによって堆積された約100nmのAl2O3コーティングでコーティングされた、ステンレス鋼の電解研磨された316L試料片。
ALDによって堆積されたハフニウムアルミニウム酸化物コーティングの耐腐食性を、HClバブル試験に基づき、ALDによって堆積された酸化アルミニウムコーティングの耐腐食性、及びALDによって堆積されたイットリウム酸化ケイ素コーティングの耐腐食性と比較した。試験された3つの試料は:3a)ALDによって堆積された約500nmのAl2O3コーティングでコーティングされたAl 6061の試料片、3b)ALDによって堆積された約300nmのHf2Al2O7コーティングでコーティングされたAl 6061の試料片、及び3c)ALDによって堆積された約500nmのY2Si2O7コーティングでコーティングされたAl 6061の試料片である。
ALDによって堆積された2つのハフニウムアルミニウム酸化物コーティングの耐腐食性を、HCl浸し試験に基づき、ALDによって堆積された酸化アルミニウムコーティングの耐腐食性と比較した。以下の4つの試料を比較した:4a)コーティングされていないステンレス鋼の試料片、4b)ALDによって堆積された約100nmのHfAl2O5コーティングでコーティングされた、ステンレス鋼の試料片、4c)ALDによって堆積された約100nmのHf2Al2O7コーティングでコーティングされた、ステンレス鋼の試料片、及び4d)ALDによって堆積された約100nmのAl2O3コーティングでコーティングされた、ステンレス鋼の試料片。
ALDによって堆積された300nmのHf2Al2O7コーティングのアルミニウムに対するスクラッチ接着を、10ミクロンのダイヤモンド針を使用して、アルミニウム基板を露出させるために必要な力(mN)を評価することにより測定した。力は、3回測定した。結果を以下の表4にまとめる。
誘導結合プラズマ質量分析法(ICP-MS)を、コーティングが何らかの微量元素(例えば、基板からコーティング中に拡散した汚染物質)を含むかどうかを評価するために、ALDによって堆積されたハフニウムアルミニウム酸化物コーティング(Hf2Al2O7)に対して実施した。ICP-MSの測定値は、Hf2Al2O7コーティング中において以下の微量元素がいずれも検出不能であった(即ち、0.05ppm未満しか存在していなかった)ことを示した:Sb、As、Ba、Be、Bi、Br、Cd、Ca、Ce、Cs、Cr、Co、Cu、Dy、Er、Eu、Gd、Ga、Ge、Au、Ho、In、I、Ir、Fe、La、Pb、Li、Lu、Mg、Mn、Hg、Mo、Nd、Ni、Nb、Os、Pd、P、Pt、K、Pr、Re、Rh、Rb、Ru、Sm、Sc、Se、Ag、Na、Sr、Ta、Te、Tb、Tl、Th、Tm、Sn、Ti、W、U、V、Yb、Y、及びZn。
DCSといったハロゲンガスに曝露されたベアアルミニウム合金Al6061部品の腐食と残留湿気とは、ALD処理チャンバ用のウエハに金属汚染を生じさせた。三次元の共形で高密度の、多孔性を有さないHf2Al2O7コーティングは、有効且つ頑強な腐食阻害物質として働いた。これは、金属汚染試験の結果に基づいて証明されており、以下の表5にまとめられている。金属汚染試験の結果は、コーティングされていない部分とコーティングされた部分(Hf2Al2O7コーティングでコーティングされた)とを、DSCと残留湿気とに約150℃から約180℃で45分間曝露した後(約900回のウエハ処理サイクルに相当)に得られた。
アルミニウム試料片を、Hf2Al2O7コーティングでコーティングし、減圧チャンバ内でCl2に約380℃で約25時間浸漬した。浸漬試験の前(図6A)と浸漬試験の後(図6B)でHf2Al2O7コーティングの厚さが変化していないことから分かるように、Hf2Al2O7コーティングにCl2腐食は観察されなかった。
Claims (20)
- 本体と、
前記本体の表面上の耐腐食性コーティングと
を備えるコーティング物品であって、
前記耐腐食性コーティングが、約1mol%から約40mol%のハフニウム、約1mol%から約40mol%のアルミニウム、及び残部の酸素を含むハフニウムアルミニウム酸化物を含み、前記ハフニウムアルミニウム酸化物が約20mol%から約98mol%の酸素を含む、コーティング物品。 - 前記耐腐食性コーティングが、約300nmの厚さにおいて、a)5% HCl溶液中において行われるHClバブル試験により試験して故障まで少なくとも約13時間、又はb)15% HCl溶液中において行われるHClバブル試験により試験して故障まで少なくとも約10時間のうちの少なくとも1つを呈する、請求項1に記載のコーティング物品。
- 前記耐腐食性コーティングが、約10mol%から約20mol%のハフニウム、約15mol%から約30mol%のアルミニウム、及び残部の酸素を含む、請求項1に記載のコーティング物品。
- 前記耐腐食性コーティングがHfAl2O5を含む、請求項1に記載のコーティング物品。
- 前記耐腐食性コーティングがHf2Al2O7を含む、請求項1に記載のコーティング物品。
- 前記耐腐食性コーティングが、約0.8から約2.5の範囲のアルミニウム対ハフニウムのモル比を有するハフニウムとアルミニウムとの均質な混合物を含む、請求項1に記載のコーティング物品。
- 前記耐腐食性コーティングが、約0.5nmから約1μmの厚さを有する、請求項1に記載のコーティング物品。
- チャンバ壁、シャワーヘッド、ノズル、プラズマ生成ユニット、高周波電極、電極ハウジング、ディフューザー及びガスラインからなる群から選択される処理チャンバの部品である、請求項1に記載のコーティング物品。
- 約10:1から約200:1の範囲の深さ対幅アスペクト比を有する部分を含み、前記部分が前記耐腐食性コーティングでコーティングされている、請求項1に記載のコーティング物品。
- 前記本体が、アルミニウム、鋼、ケイ素、銅又はマグネシウムのうちの少なくとも1つである材料を含む、請求項1に記載のコーティング物品。
- 前記耐腐食性コーティングが、約100nmの厚さにおいて、約50℃で約12時間行われる6% FeCl3浸し試験で100nm厚の酸化アルミニウムコーティングより少ない孔食を呈する、請求項1に記載のコーティング物品。
- 前記耐腐食性コーティングが、共形であり、アモルファスであり、約0%の多孔性を有し、且つ厚さ変動が約+/-5%未満である均一な厚さを有する、請求項1に記載のコーティング物品。
- 前記耐腐食性コーティングが、約300nmの厚さにおいて、スクラッチ接着試験で10ミクロンのダイヤモンド針を使用して前記本体の前記表面を露出させるために少なくとも約52mNの力を必要とする、請求項1に記載のコーティング物品。
- 前記耐腐食性コーティングが約99.95%を上回る純度を有する、請求項1に記載のコーティング物品。
- 原子層堆積を実施して物品の表面上に耐腐食性コーティングを堆積させることを含む方法であって、
前記耐腐食性コーティングが、約1mol%から約40mol%のハフニウム、約1mol%から約40mol%のアルミニウム、及び残部の酸素を含み、ハフニウムアルミニウム酸化物は、約20mol%から約98mol%の酸素を含み、
前記物品が、チャンバ壁、シャワーヘッド、ノズル、プラズマ生成ユニット、高周波電極、電極ハウジング、ディフューザー及びガスラインからなる群から選択される処理チャンバの部品である、
方法。 - 前記耐腐食性コーティングを堆積させることが、原子層堆積を使用して物品の表面上にハフニウムアルミニウム酸化物コーティングを共堆積させることを含み、前記ハフニウムアルミニウム酸化物コーティングを共堆積させることが、
前記表面を、ハフニウム含有前駆体又はアルミニウム含有前駆体と、第1の継続時間にわたって接触させて、ハフニウム又はアルミニウムを含む部分吸着層を形成することと、
前記部分吸着層を、前記アルミニウム含有前駆体又は前記ハフニウム含有前駆体と、第2の継続時間にわたって接触させて、ハフニウム及びアルミニウムを含む共吸着層を形成することと、
前記共吸着層を反応物質と接触させて、前記ハフニウムアルミニウム酸化物コーティングを形成することと
を含む、請求項15に記載の方法。 - 前記耐腐食性コーティングを堆積させることが、原子層堆積を使用して物品の表面上にハフニウムアルミニウム酸化物コーティングを共堆積させることを含み、前記ハフニウムアルミニウム酸化物コーティングを共堆積させることが、
少なくとも1つの共添加サイクルを実施することを含み、前記少なくとも1つの共添加サイクルを実施することが、
前記表面を、ハフニウム含有前駆体とアルミニウム含有前駆体との混合物と、第1の継続時間にわたって接触させて、共吸着層を形成することと、
前記共吸着層を、酸素含有反応物質と接触させて、前記ハフニウムアルミニウム酸化物コーティングを形成することとを含む、
請求項15に記載の方法。 - 原子層堆積を使用して物品の表面上にハフニウムアルミニウム酸化物コーティングを堆積させることを含む方法であって、前記ハフニウムアルミニウム酸化物コーティングを堆積させることが:
前記表面を、ハフニウム含有前駆体と又はアルミニウム含有前駆体と、第1の継続時間にわたって接触させて、第1の吸着層を形成することと、
前記第1の吸着層を、酸素含有反応物質と接触させて、酸化ハフニウム又は酸化アルミニウムを含む第1の層を形成することと、
前記第1の層を、アルミニウム含有前駆体又はハフニウム含有前駆体と、第2の継続時間にわたって接触させて、第2の吸着層を形成することと、
前記第2の吸着層を、前記酸素含有反応物質と接触させて、酸化アルミニウム又は酸化ハフニウムを含む第2の層を形成することであって、前記第1の層が酸化ハフニウムを含むとき、前記第2の層が酸化アルミニウムを含み、前記第1の層が酸化アルミニウムを含むとき、前記第2の層が酸化ハフニウムを含む、第2の層を形成することと、
前記第1の層及び前記第2の層から前記ハフニウムアルミニウム酸化物コーティングを形成することと
を含み、
前記耐腐食性コーティングが、約1mol%から約40mol%のハフニウム、約1mol%から約40mol%のアルミニウム、及び残部の酸素を含み、前記ハフニウムアルミニウム酸化物が、約20mol%から約98mol%の酸素を含む、方法。 - 前記ハフニウム含有前駆体が、ビス(シクロペンチアジエニル)ジメチルハフニウム、ビス(メチルシクロペンタジエニル)ジメチルハフニウム、ビス(メチルシクロペンタジエニル)メトキシメチルハフニウム、ハフニウム(IV)t-ブトキシド、ハフニウム(IV)エトキシド、テトラキス(ジエチルアミノ)ハフニウム、テトラキス(エチルメチルアミノ)ハフニウム、テトラキス(2,2,6,6-テトラメチル-3,5-ヘプタンジオナト)ハフニウム(IV)、HfCl4、HfCp、又はこれらの組み合わせを含む、請求項18に記載の方法。
- 前記アルミニウム含有前駆体が、トリメチルアルミニウム(TMA)、ジエチルアルミニウムエトキシド、トリス(エチルメチルアミド)アルミニウム、アルミニウム sec-ブトキシド、アルミニウムトリブロミド、アルミニウムトリクロリド、トリエチルアルミニウム(TEA)、トリイソブチルアルミニウム、トリメチルアルミニウム、若しくはトリス(ジエチルアミド)アルミニウム、又はこれらの組み合わせを含む、請求項18に記載の方法。
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