TW202147492A - 噴淋板、基板處理裝置、基板處理方法 - Google Patents
噴淋板、基板處理裝置、基板處理方法 Download PDFInfo
- Publication number
- TW202147492A TW202147492A TW110119146A TW110119146A TW202147492A TW 202147492 A TW202147492 A TW 202147492A TW 110119146 A TW110119146 A TW 110119146A TW 110119146 A TW110119146 A TW 110119146A TW 202147492 A TW202147492 A TW 202147492A
- Authority
- TW
- Taiwan
- Prior art keywords
- shower plate
- treated portion
- treated
- substrate
- emissivity
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 65
- 238000000034 method Methods 0.000 title description 7
- 238000004381 surface treatment Methods 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 238000003672 processing method Methods 0.000 claims description 8
- 230000003746 surface roughness Effects 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 16
- 230000017525 heat dissipation Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005422 blasting Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/18—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
噴淋板的實例包括具有複數個貫穿孔之一板狀導體的一主體部分及一凸緣。主體部分設有位在下表面之至少一部分上的經表面處理部分,經表面處理部分已經歷表面處理,藉此使得兩個或更多個具有不同發射率的區域存在於下表面上。凸緣圍繞主體部分。
Description
描述關於噴淋板、基板處理裝置、基板處理方法的實例。
用來處理基板的半導體製程需要在製程結果中基板之經改良的平面內均勻度。為改良在製程結果中基板之平面內均勻度,可控制晶圓溫度的平面內分佈。舉例來說,可經由將晶圓平台或基座分割成多個區以容許各個區的溫度控制,來控制晶圓溫度的平面內分佈。然而,用來改變複數個平台區之溫度的結構相當複雜,以致容易發生麻煩,此外成本會提高。
文中描述的一些實例可解決前述問題。文中描述的一些實例可提供適於控制基板溫度之平面內分佈的噴淋板、基板處理裝置、基板處理方法。
在一些實例中,噴淋板包括具有複數個貫穿孔(through hole)之板狀導體的主體部分,主體部分設有位在下表面之至少一部分上的經表面處理部分,經表面處理部分已經歷表面處理,藉此使得兩個或更多個具有不同發射率(emissivity)的區域存在於下表面上;及一圍繞主體部分的凸緣。
將參照圖式說明一種噴淋板、一種基板處理裝置、一種基板處理方法。相同或對應的組件以相同的元件符號指示並可省略其之重複說明。
第1圖係繪示基板處理裝置之一構形實例的橫截面視圖。基板處理裝置10包括由(例如)金屬形成的腔室(反應器腔室)12。在腔室12中,設置一噴淋板14。噴淋板14經供應電功率諸如RF功率。噴淋板14具有形成於其中的貫穿孔14a。噴淋板14係由單一組件或由複數個組件的組合所構成。在一實例中,噴淋板14的材料係鋁、鋁合金、或矽。在另一實例中,噴淋板14可係任何導體。
在腔室12中,設置面向噴淋板14的基座18。基座18可與腔室12電連接用於(例如)接地。因此,噴淋板14及基座18提供一平行板結構。
氣體供應管22經由絕緣組件20連接至噴淋板14。氣體供應管22於噴淋板14與基座18之間供應氣體。絕緣組件20係由絕緣體形成以使噴淋板14與氣體供應管22電性隔絕。
於腔室12之側表面上設置氣體排氣部分24。氣體排氣部分24係經設置成排出已用於基板處理的氣體。因此,可將一真空泵連接至氣體排氣部分24。
在噴淋板14與腔室12之間設置排氣管道30。排氣管道30係由(例如)陶瓷形成。排氣管道30係通過O型環34裝置於腔室12上。O型環34藉由排氣管道30之重量壓縮至適當程度。噴淋板14係通過O型環32裝置於排氣管道30上。O型環32藉由噴淋板14之重量壓縮至適當程度。
此外,流量控制環(flow control ring,FCR) 36設置於距排氣管道30固定間隔處。FCR 36係通過O型環38裝置於腔室12上。O型環38藉由FCR 36之重量壓縮至適當程度。
在一實例中,排氣管道30使經供應電功率的噴淋板14與具有GND電位的腔室12電隔離。為此,排氣管道30係由絕緣體形成。排氣管道30及FCR 36自噴淋板14與基座18之間將已用於基板處理等等之氣體傳送至氣體排氣部分24。因此,在一實例中,排氣管道30及FCR 36係環狀成形以在平面圖中圍繞基座18,從而將氣體傳送至氣體排氣部分24。
第2圖係繪示噴淋板14及基座18之一構形實例的橫截面視圖。噴淋板14包括主體部分14A及凸緣14B。主體部分14A係具有複數個貫穿孔14a的板狀導體。在第2圖之一實例中,主體部分14A係設置於基座18正上方且具有X1之寬度。在主體部分14A之下表面14b的至少一部分上,設置已經歷表面處理的一經表面處理部分40。在第2圖之實例中,經表面處理部分40係位於下表面14b之一部分上的氧化物膜。此氧化物膜可經由利用(例如)陽極氧化來氧化主體部分14A而形成。氧化物膜係,例如,Al2
O3
或 SiO2
。在一實例中,構成經表面處理部分40之氧化物膜的厚度小於50 μm。在另一實例中,氧化物膜之厚度係1 μm或以下。經表面處理部分40係設置於主體部分14A之下表面14b的至少一部分上但未封閉貫穿孔14a。
在下表面14b之一部分上存在經表面處理部分40。因此,在下表面14b上,經表面處理部分40及主體部分14A兩者經暴露。換言之,兩個具有不同發射率的區域存在於下表面14b上。在此實例中,經表面處理部分40之發射率高於主體部分14A之發射率。發射率愈高,就吸收愈多熱;發射率愈低,就吸收愈少熱。
在另一實例中,可將三個或更多個具有不同發射率的區域設置於下表面14b上。舉例來說,可設置兩個或更多個具有不同厚度的氧化物膜作為經表面處理部分。更明確言之,第一氧化物膜、較第一氧化物膜厚之第二氧化物膜、主體部分14A暴露於下表面14b上,從而容許設置三個具有不同發射率的區域。
凸緣14B圍繞主體部分14A。在一實例中,與主體部分14A一體成形的凸緣14B係環繞主體部分14A的環狀導體。凸緣14B可用來固定噴淋板14。
基座18包括:平台18A、支撐平台18A的軸18B、加熱平台18A的加熱器19。平台18A面向下表面14b。在一實例中,軸18B可藉由(例如)馬達在第2圖中的兩個箭頭方向中移動。關於加熱器19,可採用經構造用來加熱平台的任何加熱器。加熱器19可嵌入於平台18A中或可設置於平台18A的下部分或側部分處。
第3圖係噴淋板14的底視圖。在一實例中,貫穿孔14a包括第一貫穿孔14a'及第二貫穿孔14a"。第一貫穿孔14a'及第二貫穿孔14a"係經設置來將不同的氣體供應至基板。在實例中,經表面處理部分40係形成於下表面14b的中心中。
第4圖係顯示根據另一實例之經表面處理部分的橫截面視圖。第4圖繪示經提供作為經表面處理部分的粗糙表面60。粗糙表面60與經表面處理部分的周邊相比呈現增加的表面粗糙度。在此實例中,粗糙表面60之表面粗糙度具有較噴淋板14之原始表面粗糙度大的表面粗糙度。粗糙表面60可藉由(例如)噴擊(blast)處理來形成。下表面14b之表面粗糙度愈大,表面積就變得愈大。因此,增加表面粗糙度容許提升發射率。
在另一實例中,將三個或更多個具有不同程度之表面粗糙度的區域設置於下表面14b上,及藉此可設置三個或更多個具有不同發射率的區域。
第5圖係顯示在又另一實例中之經表面處理部分的橫截面視圖。第5圖繪示經提供作為經表面處理部分的塗層70。塗層70之材料不同於主體部分14A之材料。所提供的塗層70未封閉貫穿孔14a。在一實例中,塗層70之材料係,例如,Y2
O3
或 YF3
。亦可提供鐵氟龍(Teflon)作為塗層70。在一實例中,塗層70之發射率較包括鋁之主體部分14A的發射率高。在另一實例中,塗層之材料可係不同於主體部分14A的任何材料。舉例來說,塗層可藉由熱噴塗或CVD來形成。塗層之厚度係自由地決定;其可係,例如,小於50 μm或等於或小於1 μm。
當提供與主體部分不同之材料之塗層作為經表面處理部分時,可提供兩個或更多個具有不同厚度的塗層。舉例來說,可提供第一塗層及形成在不同於第一塗層之區域處從而較第一塗層厚的第二塗層。在此情況,可於下表面14b上提供三個具有不同發射率的區域。
已描述氧化物膜、粗糙表面、塗層作為經表面處理部分之一實例;然而,在另一實例中,可提供另一具體例之經表面處理部分。
第6A圖至第6H圖係繪示經表面處理部分之配置實例的底表面視圖。第6A圖係繪示提供圓形地位於下表面14b之中心中之經表面處理部分40之一實例的視圖。第6B圖係繪示提供以環形狀位於下表面14b上之經表面處理部分40之一實例的視圖。第6C圖係繪示提供位於除特定扇形外之大部分下表面14b上之經表面處理部分40之一實例的視圖。第6D圖係繪示提供以扇形形狀位於下表面14b上之經表面處理部分40之一實例的視圖。第6E圖係繪示提供環形地沿下表面14b之外緣之經表面處理部分40之一實例的視圖。第6F圖係繪示提供間歇地沿下表面14b之外緣之經表面處理部分40之一實例的視圖。第6G圖係繪示提供第一部分40a及第二部分40b作為經表面處理部分40之一實例的視圖。雖然第一部分40a及第二部分40b皆已經歷表面處理,但其發射率不同。在此實例中,第二部分40b之發射率高於第一部分40a之發射率。第一部分40a及第二部分40b之發射率高於主體部分14A之發射率。因此,在第6G圖之實例中,提供三個具有不同發射率的區域。第6H圖係繪示提供完全位於下表面14b上之經表面處理部分40之一實例的視圖。經表面處理部分40包括具有不同發射率的第一部分40a及第二部分40b。第二部分40b之發射率高於第一部分40a之發射率,且第一部分40a之發射率高於主體部分14A之發射率。第6A圖至第6H圖僅係說明且經表面處理部分可形成於下表面14b上之任何位置。
第7圖繪示基板處理方法的一實例。在此基板處理方法中,首先,將基板50置於平台18A上。基板50欲於基板處理裝置中加工。噴淋板14之下表面14b面向平台及基板50。基板50係,例如,晶圓。基板50包括:位於經表面處理部分40正下方的正下方部分50a及位於除主體部分14A之經表面處理部分40外之部分正下方的非正下方部分50b及50c。
接下來,例如,在藉由加熱器19將平台18A加熱至400 ℃或更高的同時,對基板50施行電漿處理。在一實例中,經由在通過貫穿孔14a將氣體供應至平台18A上的同時向噴淋板14供應高頻功率來對基板50施行電漿處理。此時,已經歷表面處理之經表面處理部分40存在於下表面14b之至少一部分上,及因此,另外兩個具不同發射率的區域存在於下表面14b上。此使得基板50的冷卻程度視基板50的區域而不同。明確言之,基板50的正下方部分50a面向具高發射率的經表面處理部分40,及因此,容易散熱。另一方面,基板50的非正下方部分50b及50c面向具低發射率的主體部分14A,及因此,散熱困難。在第7圖中,具實線的箭頭指示自正下方部分50a的散熱量大,及具虛線的箭頭指示自非正下方部分50b及50c的散熱量小。因此,在此實例中,就噴淋板14的貢獻而言,在正下方部分50a處容易散熱及在非正下方部分50b及50c處不易散熱。因此,提供經表面處理部分容許控制基板溫度分佈。如前的此一製程可提供作為,例如,高溫電漿處理。
在一實例中之平台18A及噴淋板14之平行板結構中,基板中心的溫度傾向於變得較基板的外緣高。因此,在基板中心正上方提供具高發射率的經表面處理部分,以致基板之溫度可較未提供經表面處理部分的情況更接近均勻。
在另一實例中,可採用意欲為基板提供溫度差的製程。在此情況,為獲得預期的溫度差,可調整經表面處理部分的形狀。
因此,提供經表面處理部分以將噴淋板的下表面分割成針對各發射率的多個區域,以致於一平面內控制自基板的散熱。視經表面處理部分的材料或形狀而定,經表面處理部分40具有較下表面14b上之經表面處理部分除外之區域更高的發射率或更低的發射率。由於經表面處理部分可經由加工噴淋板之下表面而容易地提供,因此其提供成本優勢。
第8圖係顯示經由表面處理調整基板溫度的圖。圓顯示當使用由Al製成之噴淋板時,基板溫度之平面內分佈的一實例。矩形顯示當使用由Al製成之另一噴淋板時,基板溫度之平面內分佈的一實例。此噴淋板具有完全形成於其上並另外對其完全施行噴擊處理的氧化物膜。在此等實例中,已採用相同製程。明確言之,將Ar以3 slm供應至腔室中,將腔室內壓力設為600 Pa,將平台與噴淋板之間的間隙設為14.5 mm;及將基座、噴淋板、腔室壁表面的溫度分別設為650 ℃、240 ℃、160 ℃。根據第8圖,發現可經由提供包括氧化物膜及粗糙表面之組合的經表面處理部分來降低基板溫度。
第9圖係顯示經由表面處理調整基板溫度的另一圖。第9圖顯示當經由使用三種不同噴淋板對基板施行處理時,具有300 mm直徑之基板的溫度分佈。以圓指示的數據顯示當使用由Al製成之噴淋板時,基板溫度之平面內分佈的一實例。以菱形指示的數據顯示當使用由Al製成之另一噴淋板時,基板溫度之平面內分佈的一實例。此噴淋板具有在其下表面之中心中在具有150 mm直徑之區域中藉由噴擊處理形成之粗糙表面。以矩形指示的數據顯示當使用由Al製成之另一噴淋板時,基板溫度之平面內分佈的一實例。此噴淋板具有經形成的氧化物膜且進一步具有在其下表面之中心中在具有150 mm直徑之區域中藉由噴擊處理形成之粗糙表面。在任何實例中,Al材料暴露於噴淋板之下表面的外緣側上。第9圖中之所有數據係經由模擬獲得。
根據第9圖,發現基板溫度可經由形成粗糙表面而降低,且基板溫度可經由於氧化物膜上形成粗糙表面而進一步地降低。以圓指示之由Al製成之噴淋板的發射率係0.1,及Al粗糙表面的發射率係0.2,及氧化物膜之粗糙表面的發射率係0.3。
第10圖係顯示自基板施加至噴淋板之輻射熱量的圖。第10圖中之結果係經由模擬獲得。以圓指示的數據顯示結合鋁暴露於其整個表面上之噴淋板所獲得的數據。假定鋁的發射率係0.1。以三角形指示的數據顯示結合整個表面經氧化物膜(AlOx
)覆蓋之噴淋板所獲得的數據。假定氧化物膜的發射率係0.2。根據第10圖,發現尤其在基板溫度為400 ℃或更高的高溫區域中,自基板至噴淋板之輻射熱量的差異變得更大。換言之,對於較高的基板溫度,由於提供經表面處理部分所引起之基板的溫度降低效應更顯著。
10:基板處理裝置
12:腔室(反應器腔室)
14:噴淋板
14a:貫穿孔
14a':第一貫穿孔
14a":第二貫穿孔
14b:主體部分之下表面
14A:主體部分
14B:凸緣
18:基座
18A:平台
18B:軸
19:加熱器
20:絕緣組件
22:氣體供應管
24:氣體排氣部分
30:排氣管道
32,34,38:O型環
36:流量控制環
40:經表面處理部分
40a:第一部分
40b:第二部分
50:基板
50a:正下方部分
50b,50c:非正下方部分
60:粗糙表面
70:塗層
X1:寬度
第1圖係繪示基板處理裝置之一構形實例的橫截面視圖;
第2圖係噴淋板及基座之橫截面視圖;
第3圖係噴淋板之底視圖;
第4圖係根據另一實例之經表面處理部分的橫截面視圖;
第5圖係根據另一實例之經表面處理部分的橫截面視圖;
第6A圖顯示經表面處理部分的一實例;
第6B圖顯示經表面處理部分的另一實例;
第6C圖顯示經表面處理部分的另一實例;
第6D圖顯示經表面處理部分的另一實例;
第6E圖顯示經表面處理部分的另一實例;
第6F圖顯示經表面處理部分的另一實例;
第6G圖顯示經表面處理部分的另一實例;
第6H圖顯示經表面處理部分的另一實例;
第7圖繪示基板處理方法的一實例;
第8圖係顯示經由表面處理調整基板溫度的圖;
第9圖係顯示經由表面處理調整基板溫度的另一圖;及
第10圖顯示自基板施加至噴淋板之輻射熱的量。
14a:貫穿孔
14a':第一貫穿孔
14a":第二貫穿孔
14b:主體部分之下表面
40:經表面處理部分
Claims (12)
- 一種噴淋板,其包括: 一板狀導體的一主體部分,具有複數個貫穿孔,該主體部分設有位在一下表面之至少一部分上的一經表面處理部分,該經表面處理部分已經歷表面處理,藉此使得兩個或更多個具有不同發射率的區域存在於該下表面上;及 一凸緣,圍繞該主體部分的。
- 如請求項1所述之噴淋板,其中該經表面處理部分係氧化物膜。
- 如請求項1所述之噴淋板,其中該經表面處理部分包括兩個或更多個具有不同厚度的氧化物膜。
- 如請求項2所述之噴淋板,其中該氧化物膜之厚度係小於50 μm。
- 如請求項2所述之噴淋板,其中該氧化物膜之厚度係1 μm或以下。
- 如請求項1所述之噴淋板,其中該經表面處理部分具有一粗糙表面,該經表面處理部分之表面粗糙度與該經表面處理部分之周邊相比增加。
- 如請求項1所述之噴淋板,其中該經表面處理部分係不同於該主體部分之材料的材料塗層。
- 如請求項1所述之噴淋板,其中該經表面處理部分包括兩個或更多個具有不同厚度且不同於該主體部分之材料的塗層。
- 如請求項7所述之噴淋板,其中該塗層之材料包括Y2 O3 或YF3 。
- 一種基板處理裝置,其包括: 如請求項1至9中任一項所述之噴淋板;及 一基座,其包括一平台及一加熱器,該平台面向該下表面,該加熱器係經構造以加熱該平台。
- 一種基板處理方法,其包括: 將一基板置於一平台上;及 在將該平台加熱至400℃或更高的同時,在一噴淋板之一主體部分之一下表面面向該平台的情況下向該基板施行電漿處理, 其中,一經表面處理部分設置於該下表面之至少一部分上,該經表面處理部分已經歷表面處理,藉此使得兩個或更多個具有不同發射率的區域存在於該下表面上。
- 如請求項11所述之基板處理方法,其中該經表面處理部分具有較該下表面上之該經表面處理部分除外之區域更高的發射率。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063034392P | 2020-06-03 | 2020-06-03 | |
US63/034,392 | 2020-06-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202147492A true TW202147492A (zh) | 2021-12-16 |
Family
ID=78787369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110119146A TW202147492A (zh) | 2020-06-03 | 2021-05-27 | 噴淋板、基板處理裝置、基板處理方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210384033A1 (zh) |
JP (1) | JP2021188138A (zh) |
KR (1) | KR20210150978A (zh) |
CN (1) | CN113764251A (zh) |
TW (1) | TW202147492A (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230282454A1 (en) * | 2022-03-02 | 2023-09-07 | Applied Materials, Inc. | Thermal shield for processing chamber |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3620369C1 (de) * | 1986-06-18 | 1987-05-07 | Rosorius Gerhard | Thermisch lesbare Flaechenkennzeichnungsanordnung und Verfahren sowie Vorrichtung zu deren Temperaturaktivierung |
GB9411911D0 (en) * | 1994-06-14 | 1994-08-03 | Swan Thomas & Co Ltd | Improvements in or relating to chemical vapour deposition |
US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
US6206972B1 (en) * | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
CN1328766C (zh) * | 2001-01-22 | 2007-07-25 | 东京毅力科创株式会社 | 处理装置和处理方法 |
JP4306403B2 (ja) * | 2003-10-23 | 2009-08-05 | 東京エレクトロン株式会社 | シャワーヘッド構造及びこれを用いた成膜装置 |
US7666323B2 (en) * | 2004-06-09 | 2010-02-23 | Veeco Instruments Inc. | System and method for increasing the emissivity of a material |
DE602005012945D1 (de) * | 2005-07-20 | 2009-04-09 | Zeiss Carl Sms Gmbh | Teilchenstrahlbelichtungssystem und Vorrichtung zur Strahlbeeinflussung |
JP5558807B2 (ja) * | 2007-03-22 | 2014-07-23 | 株式会社東芝 | 真空成膜装置用部品及び真空成膜装置 |
KR101064210B1 (ko) * | 2009-06-01 | 2011-09-14 | 한국생산기술연구원 | 막증착 진공장비용 샤워헤드 |
DE102011056589A1 (de) * | 2011-07-12 | 2013-01-17 | Aixtron Se | Gaseinlassorgan eines CVD-Reaktors |
US20130164948A1 (en) * | 2011-12-22 | 2013-06-27 | Intermolecular, Inc. | Methods for improving wafer temperature uniformity |
US9164388B2 (en) * | 2012-04-10 | 2015-10-20 | Kla-Tencor Corporation | Temperature control in EUV reticle inspection tool |
JP6199619B2 (ja) * | 2013-06-13 | 2017-09-20 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
US9914999B2 (en) * | 2015-04-28 | 2018-03-13 | Applied Materials, Inc. | Oxidized showerhead and process kit parts and methods of using same |
US9850573B1 (en) * | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
US10186400B2 (en) * | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
US10755900B2 (en) * | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
US10626499B2 (en) * | 2017-07-28 | 2020-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition device structure |
CN111066133B (zh) * | 2017-08-11 | 2023-08-22 | 应用材料公司 | 用于改善热化学气相沉积(cvd)均匀性的设备和方法 |
KR20200094781A (ko) * | 2017-12-04 | 2020-08-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 부분적으로 양극산화된 샤워헤드 |
US11149350B2 (en) * | 2018-01-10 | 2021-10-19 | Asm Ip Holding B.V. | Shower plate structure for supplying carrier and dry gas |
US11062887B2 (en) * | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
CN109881162A (zh) * | 2018-11-29 | 2019-06-14 | 芮瑛 | 一种基于等离子喷涂技术的溅射用靶材制备工艺 |
JP7159074B2 (ja) * | 2019-02-08 | 2022-10-24 | キオクシア株式会社 | ガス供給部材、プラズマ処理装置、及びコーティング膜の形成方法 |
WO2020213307A1 (ja) * | 2019-04-16 | 2020-10-22 | 昭和電工株式会社 | フッ化物皮膜形成用アルミニウム合金部材及びフッ化物皮膜を有するアルミニウム合金部材 |
US20210032750A1 (en) * | 2019-07-31 | 2021-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition apparatus and method of forming metal oxide layer using the same |
US20210123143A1 (en) * | 2019-10-23 | 2021-04-29 | Applied Materials, Inc. | Hafnium aluminum oxide coatings deposited by atomic layer deposition |
US11515129B2 (en) * | 2019-12-03 | 2022-11-29 | Applied Materials, Inc. | Radiation shield modification for improving substrate temperature uniformity |
CN114830312A (zh) * | 2019-12-17 | 2022-07-29 | 应用材料公司 | 腔室部件的表面成形和纹理化 |
US20220093373A1 (en) * | 2020-09-21 | 2022-03-24 | Applied Materials, Inc. | Method for residue non-uniformity modulation |
KR20220045708A (ko) * | 2020-10-06 | 2022-04-13 | (주)포인트엔지니어링 | 증착 장비용 가스분사부재 및 이를 구비하는 증착 장비 |
US20220375727A1 (en) * | 2021-05-19 | 2022-11-24 | Applied Materials, Inc. | Method to improve wafer edge uniformity |
-
2021
- 2021-05-27 TW TW110119146A patent/TW202147492A/zh unknown
- 2021-05-27 KR KR1020210068049A patent/KR20210150978A/ko active Search and Examination
- 2021-05-31 US US17/334,797 patent/US20210384033A1/en active Pending
- 2021-05-31 JP JP2021091168A patent/JP2021188138A/ja active Pending
- 2021-06-03 CN CN202110618588.7A patent/CN113764251A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN113764251A (zh) | 2021-12-07 |
US20210384033A1 (en) | 2021-12-09 |
JP2021188138A (ja) | 2021-12-13 |
KR20210150978A (ko) | 2021-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102617065B1 (ko) | 서셉터 및 기판 처리 장치 | |
US5938850A (en) | Single wafer heat treatment apparatus | |
JP4176848B2 (ja) | 基板支持体及び処理装置 | |
TWI390605B (zh) | Processing device | |
US20200318852A1 (en) | Air Cooled Faraday Shield and Methods for Using the Same | |
JP7062383B2 (ja) | アーク放電および点火を防ぎプロセスの均一性を向上させるための特徴を有する静電チャック | |
JP4869610B2 (ja) | 基板保持部材及び基板処理装置 | |
JP3198619U (ja) | 象限を有する基板支持体 | |
JP6937753B2 (ja) | 融合されたカバーリング | |
JP2010157559A (ja) | プラズマ処置装置 | |
KR20070009450A (ko) | 서셉터를 조화하여 정전하를 감소시키는 장치 | |
TW202147492A (zh) | 噴淋板、基板處理裝置、基板處理方法 | |
JP7078752B2 (ja) | 真空処理装置 | |
TW202219298A (zh) | 濺鍍裝置 | |
US20230317463A1 (en) | Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers | |
TW201502314A (zh) | 用於原子層沉積之加熱燈 | |
JPWO2020090164A1 (ja) | 真空処理装置 | |
TWI781338B (zh) | 真空處理裝置 | |
JP7182916B2 (ja) | プラズマ処理装置 | |
US6756088B2 (en) | Methods of forming coatings on gas-dispersion fixtures in chemical-vapor-deposition systems | |
TW202115767A (zh) | 電漿處理裝置 | |
JP2021034565A (ja) | 載置台及び基板処理装置 | |
JP7446184B2 (ja) | 載置台、プラズマ処理装置及び載置台の製造方法 | |
JP7145625B2 (ja) | 基板載置構造体およびプラズマ処理装置 | |
JP7290413B2 (ja) | 真空処理装置 |