JP2022521842A - 3d-nandモールド - Google Patents
3d-nandモールド Download PDFInfo
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- JP2022521842A JP2022521842A JP2021558829A JP2021558829A JP2022521842A JP 2022521842 A JP2022521842 A JP 2022521842A JP 2021558829 A JP2021558829 A JP 2021558829A JP 2021558829 A JP2021558829 A JP 2021558829A JP 2022521842 A JP2022521842 A JP 2022521842A
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- 238000000034 method Methods 0.000 claims abstract description 109
- 150000004767 nitrides Chemical class 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000012528 membrane Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims description 46
- 235000012431 wafers Nutrition 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 5
- 238000009966 trimming Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 238000005108 dry cleaning Methods 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 238000010586 diagram Methods 0.000 abstract description 15
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
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- 239000001257 hydrogen Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
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- 239000007789 gas Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
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- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- -1 oxynitrides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 244000208734 Pisonia aculeata Species 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N carbon dioxide Natural products O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
Description
Claims (15)
- 電子デバイスを形成する方法であって、
交互の第2の層及び第1の層を含む膜スタックから一又は複数の第1の層を除去することであって、前記第1の層は、ポリシリコン層を含む一又は複数の膜で第2の側において境界された開口部を残すように、前記第1の層の第1の側から除去され、前記開口部は第1の厚さを有する、交互の第2の層及び第1の層を含む膜スタックから一又は複数の第1の層を除去することと、
前記開口部の厚さを前記第1の厚さから第2の厚さに増加させ、前記第2の層の第1の厚さを、前記第2の層の前記第1の厚さよりも小さい前記第2の層の第2の厚さに減少させるために、前記開口部を通して前記第2の層をトリミングすることと、
前記開口部内にワード線置換材料を堆積させることと
を含む方法。 - 前記第1の層が窒化物層を含み、前記第2の層が酸化物層を含む、請求項1に記載の方法。
- 前記第2の層が酸化ケイ素を含み、前記第1の層が窒化ケイ素を含み、前記ワード線置換材料がタングステンを含む、請求項2に記載の方法。
- 前記第2の厚さが前記第1の厚さよりも約50%以上大きい、請求項1に記載の方法。
- 前記第1の厚さが約1nmから約50nmの範囲である、請求項1に記載の方法。
- 前記一又は複数の第1の層を除去することは、
前記膜スタックを通るスリットパターン開口部を形成することであって、前記第1の層の前記第1の側を前記スリットパターン開口部に露出させる、前記膜スタックを通るスリットパターン開口部を形成することと、
前記スリットパターン開口部を通して前記第1の層の前記第1の側をエッチング液に暴露することと
を更に含む、請求項1に記載の方法。 - 前記第2の層をトリミングすることは、前記第2の層を、前記スリットパターン開口部を通して、フッ素系気相乾式洗浄化学物質又は希釈HF化学物質に暴露することを含む、請求項6に記載の方法。
- 前記ワード線置換材料が、前記タングステンと前記第2の層との間に窒化チタンライナを更に含む、請求項3に記載の方法。
- 前記膜スタックを通るメモリホールチャネルを形成することと、
第1の酸化物チャネル層を堆積させることと、
前記第1の酸化物チャネル層上に窒化物チャネル層を堆積させることと、
前記窒化物チャネル層上に第2の酸化物チャネル層を堆積させることと、
前記メモリホールチャネル内において前記第2の酸化物チャネル層上に前記ポリシリコン層を形成することと
を更に含む、請求項1に記載の方法。 - 前記開口部の前記第2の側にインシトゥ蒸気生成(ISSG)酸化物層又はラジカルプラズマ酸化(RPO)酸化物層を形成するために、前記開口部をインシトゥ蒸気プロセスに暴露することを更に含む、請求項1に記載の方法。
- 前記第2の層をトリミングすることと同時に、前記開口部の前記第2の側から前記開口部の前記第2の側の前記酸化層が除去される、請求項10に記載の方法。
- 前記ISSG酸化物層又はRPO酸化物層が約2nmの厚さを有する、請求項10に記載の方法。
- 半導体メモリデバイスであって、
前記半導体メモリデバイスの第1の部分に交互の窒化物層及び酸化物層を含む膜スタックであって、前記膜スタックの前記交互の窒化物層及び酸化物層は、窒化物:酸化物の厚さ比(Nf:Of)を有する、膜スタックと
前記半導体メモリデバイスの第2の部分に交互のワード線及び酸化物層を含むメモリスタックであって、前記メモリスタックの前記交互のワード線及び酸化物層は、ワード線:酸化物の厚さ比(Wm:Om)を有する、メモリスタックと
を備え、
0.1(Wm:Om)<Nf:Of<0.95(Wm:Om)である、半導体メモリデバイス。 - 前記膜スタックの前記窒化物層は、約1nmから約50nmの範囲の厚さを有し、前記メモリスタックの前記酸化物層は、約10nmから約20nmの範囲の平均厚さを有し、Wm:Omは、約2.5:2から約3.5:2の範囲である、請求項13に記載の半導体メモリデバイス。
- 処理ツールであって、
ウエハを移動させるように構成されたロボットを含む中央移送ステーションと、
複数のプロセスステーションであって、各プロセスステーションは、前記中央移送ステーションに接続され、隣接するプロセスステーションの処理領域から分離された処理領域を提供し、前記複数のプロセスステーションは、酸化物層薄膜化チャンバ及びワード線堆積チャンバを含む、プロセスステーションと、
前記中央移送ステーション及び前記複数のプロセスステーションに接続されたコントローラであって、プロセスステーション間で前記ウエハを移動させるために前記ロボットを作動させ、前記各プロセスステーションで行われるプロセスを制御するように構成されたコントローラと
を備える処理ツール。
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