JP2022097741A - 半導体装置および製造方法 - Google Patents
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 330
- 239000000126 substance Substances 0.000 claims abstract description 173
- 239000001307 helium Substances 0.000 claims abstract description 131
- 229910052734 helium Inorganic materials 0.000 claims abstract description 131
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 130
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 36
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Abstract
Description
特許文献1 特表2017―47285号公報
特許文献2 特表2017-146148号公報
Claims (10)
- 半導体基板を備える半導体装置であって、
前記半導体基板は、水素を含む水素含有領域を有し、
前記水素含有領域は、少なくとも一部の領域にヘリウムを含み、
前記水素含有領域の深さ方向における水素化学濃度分布は1つ以上の水素濃度谷部を有し、それぞれの前記水素濃度谷部において、水素化学濃度が酸素化学濃度の1/10以上である
半導体装置。 - それぞれの前記水素濃度谷部において、前記水素化学濃度が炭素化学濃度以上である
請求項1に記載の半導体装置。 - 前記水素含有領域の前記深さ方向における前記水素化学濃度分布は1つ以上の水素濃度ピークを有し、
前記水素濃度ピークにおいて、前記水素化学濃度が前記酸素化学濃度の1/2以上である
請求項1または2に記載の半導体装置。 - 少なくとも一つの前記水素濃度谷部において、前記水素化学濃度がヘリウム化学濃度以上である
請求項1から3のいずれか一項に記載の半導体装置。 - 前記水素含有領域の前記深さ方向におけるヘリウム化学濃度分布はヘリウム濃度ピークを有し、
前記ヘリウム濃度ピークよりも深い位置に設けられた前記水素濃度谷部において、前記水素化学濃度がヘリウム化学濃度以上である
請求項1から4のいずれか一項に記載の半導体装置。 - 前記水素化学濃度分布は、複数の水素濃度ピークを有し、
前記ヘリウム化学濃度分布の前記ヘリウム濃度ピークの半値全幅が、それぞれの前記水素濃度ピークの間隔よりも大きい
請求項5に記載の半導体装置。 - 前記ヘリウム濃度ピークは、深さ方向において2つの前記水素濃度ピークの間に配置されている
請求項6に記載の半導体装置。 - 前記ヘリウム濃度ピークよりも深い位置に2つ以上の水素濃度ピークを有し、
前記水素含有領域の深さ方向におけるキャリア濃度分布は、前記ヘリウム濃度ピークよりも深い位置における前記水素濃度ピークと略同一の深さに配置された2つ以上の水素対応ピークを有し、
前記ヘリウム濃度ピークよりも深い位置において、それぞれの前記水素対応ピークの間における前記キャリア濃度分布は、ピークを有さない
請求項5から7のいずれか一項に記載の半導体装置。 - 前記キャリア濃度分布は、それぞれの前記水素対応ピークの間にキャリア濃度谷部を有し、
前記ヘリウム濃度ピークと略同一の深さ位置における前記キャリア濃度谷部のキャリア濃度の極小値は、当該キャリア濃度谷部の前後における前記キャリア濃度谷部のキャリア濃度の極小値よりも低く、
前記ヘリウム濃度ピークと略同一の深さ位置における前記キャリア濃度谷部のキャリア濃度の極小値は、前記半導体基板におけるベースドーピング濃度よりも高い
請求項8に記載の半導体装置。 - 半導体基板を備える半導体装置の製造方法であって、
前記半導体基板に水素を注入して水素含有領域を形成し、
前記水素含有領域の少なくとも一部の領域にヘリウムが含まれるように、前記半導体基板にヘリウムを注入し、
前記水素含有領域の深さ方向における水素化学濃度分布は1つ以上の水素濃度谷部を有し、少なくとも一つの前記水素濃度谷部が、水素化学濃度が酸素化学濃度の1/10以上となるように、前記半導体基板に前記水素を注入する
製造方法。
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JP6724993B2 (ja) * | 2016-08-12 | 2020-07-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US11101378B2 (en) | 2019-04-09 | 2021-08-24 | Raytheon Company | Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors |
DE102020110072A1 (de) * | 2020-04-09 | 2021-10-14 | Infineon Technologies Ag | Vertikale leistungs-halbleitervorrichtung und herstellungsverfahren |
US11362190B2 (en) | 2020-05-22 | 2022-06-14 | Raytheon Company | Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers |
JP7405261B2 (ja) | 2020-07-15 | 2023-12-26 | 富士電機株式会社 | 半導体装置 |
CN115516642A (zh) | 2020-11-11 | 2022-12-23 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
CN115443543A (zh) * | 2020-11-17 | 2022-12-06 | 富士电机株式会社 | 半导体装置 |
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