JP2022068583A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 120
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- 230000002093 peripheral effect Effects 0.000 description 41
- 239000004065 semiconductor Substances 0.000 description 17
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- 238000010586 diagram Methods 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 11
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- 238000009792 diffusion process Methods 0.000 description 8
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- 230000000694 effects Effects 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
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- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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Abstract
【解決手段】プラズマ処理装置は、チャンバと、第1の下部電極16と、第2の下部電極AUXと、第1の上部電極36と、第2の上部電極35と、第1の電源と、を有する。第1の下部電極16は、チャンバの内部に設けられ、基板Wを載置する基板載置領域を有する。第2の下部電極AUXは、基板載置領域の外側の領域に配置される。第1の上部電極36は、基板載置領域と対向して配置される。第2の上部電極35は、第1の上部電極36の外側の領域に配置され、第2の下部電極AUXと対向して配置される。第1の電源は、第1の下部電極16に周期性を有する信号を供給する。第2の下部電極AUX及び第2の上部電極35の少なくとも一方は、凹部Dを有する。凹部Dの表面に対する法線上に第2の下部電極AUX又は第2の上部電極35が位置する。
【選択図】図4
Description
Claims (17)
- チャンバと、
前記チャンバの内部に設けられ、基板を載置する基板載置領域を有する第1の下部電極と、
前記基板載置領域の外側の領域に配置された第2の下部電極と、
前記基板載置領域と対向して配置された第1の上部電極と、
前記第1の上部電極の外側の領域に配置され、前記第2の下部電極と対向して配置された第2の上部電極と、
前記第1の下部電極に周期性を有する信号を供給する第1の電源と、
を有し、
前記第2の下部電極及び前記第2の上部電極の少なくとも一方は凹部を有し、
前記凹部の表面に対する法線上に前記第2の下部電極又は前記第2の上部電極が位置するプラズマ処理装置。 - 前記第2の下部電極及び前記第2の上部電極の双方が前記凹部を有し、
前記第2の下部電極の前記凹部の表面に対する法線上に前記第2の上部電極の前記凹部が位置し、且つ、
前記第2の上部電極の前記凹部の表面に対する法線上に前記第2の下部電極の前記凹部が位置する、
請求項1に記載のプラズマ処理装置。 - 前記第2の上部電極に直流電圧を供給する第2の電源を更に有する請求項1又は2に記載のプラズマ処理装置。
- 前記第2の上部電極に周期性を有する信号を供給する第3の電源を更に有する請求項1~3のいずれか一項に記載のプラズマ処理装置。
- 前記第3の電源から出力された前記周期性を有する信号を前記第1の上部電極に供給する第1の給電ラインと、
前記第3の電源から出力された前記周期性を有する信号を前記第2の上部電極に供給する第2の給電ラインと、
を有し、
前記第1の給電ライン又は前記第2の給電ラインに可変インピーダンス回路を有する請求項4に記載のプラズマ処理装置。 - 前記第2の下部電極に直流電圧を供給する第4の電源を更に備える請求項3~5のいずれか一項に記載のプラズマ処理装置。
- 前記第1の電源から出力された前記周期性を有する信号を前記第1の下部電極に供給する第3の給電ラインと、
前記第1の電源から出力された前記周期性を有する信号を前記第2の下部電極に供給する第4の給電ラインと、
を有し、
前記第3の給電ライン又は前記第4の給電ラインに可変インピーダンス回路を有する請求項1~6のいずれか一項に記載のプラズマ処理装置。 - 前記第2の下部電極に周期性を有する信号を供給する第5の電源を更に備える請求項1~6のいずれか一項に記載のプラズマ処理装置。
- 前記第2の下部電極又は前記第2の上部電極に発生する自己バイアス電圧又は電圧波形を計測するセンサーを更に有し、前記センサーより計測された計測値に応じて前記可変インピーダンス回路のインピーダンスを制御する制御部を有する請求項5又は7に記載のプラズマ処理装置。
- 前記第2の下部電極に発生する自己バイアス電圧又は電圧波形を計測するセンサーを更に有し、前記センサーより計測された計測値に応じて前記第2の電源の出力を制御する制御部を有する請求項3に記載のプラズマ処理装置。
- 前記第2の下部電極に発生する自己バイアス電圧又は電圧波形を計測するセンサーを更に有し、前記センサーより計測された計測値に応じて前記第5の電源の出力を制御する制御部を有する請求項8に記載のプラズマ処理装置。
- 前記制御部は、前記第2の上部電極に、前記第2の下部電極に発生する自己バイアス電圧の大きさ以上の大きさの負の直流電圧が発生するように前記第2の電源の出力を制御する請求項10に記載のプラズマ処理装置。
- 前記第2の下部電極及び前記第2の上部電極は、電気的に接地されている請求項1又は2に記載のプラズマ処理装置。
- 前記第2の上部電極と前記第2の下部電極との間の間隔が、前記第1の上部電極と前記第1の下部電極との間の間隔よりも狭い請求項1~13のいずれか一項に記載のプラズマ処理装置。
- 前記基板が載置される基板載置領域と前記第2の下部電極との間に、導電性のエッジリングを有する請求項1~14のいずれか一項に記載のプラズマ処理装置。
- 前記第2の上部電極及び前記第2の下部電極が、前記凹部の底面に対する法線が前記基板載置領域に対する法線に対して傾斜するように配置される請求項1~15のいずれか一項に記載のプラズマ処理装置。
- 前記第2の上部電極が、前記チャンバの内壁又は前記チャンバの内壁に沿って設けられたデポシールドにより構成される請求項16に記載のプラズマ処理装置。
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JP2020177345A JP7489896B2 (ja) | 2020-10-22 | 2020-10-22 | プラズマ処理装置 |
TW110137517A TW202232566A (zh) | 2020-10-22 | 2021-10-08 | 電漿處理裝置 |
KR1020210135432A KR20220053478A (ko) | 2020-10-22 | 2021-10-13 | 플라스마 처리 장치 |
CN202111194324.XA CN114388329A (zh) | 2020-10-22 | 2021-10-13 | 等离子体处理装置 |
US17/501,889 US20220130646A1 (en) | 2020-10-22 | 2021-10-14 | Plasma processing apparatus |
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JP2020177345A JP7489896B2 (ja) | 2020-10-22 | 2020-10-22 | プラズマ処理装置 |
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JP2022068583A true JP2022068583A (ja) | 2022-05-10 |
JP7489896B2 JP7489896B2 (ja) | 2024-05-24 |
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US (1) | US20220130646A1 (ja) |
JP (1) | JP7489896B2 (ja) |
KR (1) | KR20220053478A (ja) |
CN (1) | CN114388329A (ja) |
TW (1) | TW202232566A (ja) |
Family Cites Families (5)
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US6391787B1 (en) | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
CN102270577B (zh) | 2004-06-21 | 2014-07-23 | 东京毅力科创株式会社 | 等离子体处理装置和方法 |
US7938931B2 (en) | 2006-05-24 | 2011-05-10 | Lam Research Corporation | Edge electrodes with variable power |
JP5348919B2 (ja) | 2008-03-27 | 2013-11-20 | 東京エレクトロン株式会社 | 電極構造及び基板処理装置 |
JP2016184610A (ja) | 2015-03-25 | 2016-10-20 | 株式会社東芝 | 上部電極、エッジリングおよびプラズマ処理装置 |
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- 2021-10-08 TW TW110137517A patent/TW202232566A/zh unknown
- 2021-10-13 KR KR1020210135432A patent/KR20220053478A/ko unknown
- 2021-10-13 CN CN202111194324.XA patent/CN114388329A/zh active Pending
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US20220130646A1 (en) | 2022-04-28 |
JP7489896B2 (ja) | 2024-05-24 |
TW202232566A (zh) | 2022-08-16 |
CN114388329A (zh) | 2022-04-22 |
KR20220053478A (ko) | 2022-04-29 |
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