JP2022032045A - 基板加工方法 - Google Patents
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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Abstract
Description
Claims (13)
- 複数のデバイス(8)が設けられたデバイスエリア(6)を一側面(2)に有する基板(W)を加工する方法であって、
第1保護フィルム(22)を準備するステップと、
第2保護フィルム(14)を準備するステップと、
前記第1保護フィルム(22)を前記基板(W)の前記一側面(2)に取り付けることにより、前記第1保護フィルム(22)の前面(24)の少なくとも中央エリアを前記基板(W)の前記一側面(2)と直接接触させるステップと、
前記第2保護フィルム(14)を、前記基板(W)の前記一側面(2)の反対側の面(4)に取り付けるステップと、
前記第2保護フィルム(14)を前記基板(W)の前記一側面(2)の反対側の面(4)に取り付けるステップの後に、レーザー光(LB)を前記基板(W)に前記基板(W)の前記一側面(2)の反対側の面(4)から照射するステップと、
を備える方法において、
前記基板(W)は、前記レーザー光(LB)を透過する材料から構成され、
前記第2保護フィルム(14)は、前記レーザー光(LB)を透過する材料から構成され、
前記レーザー光(LB)が複数の位置において前記基板(W)に照射されることにより、前記基板(W)に複数の改質領域が形成される、
方法。 - 前記第1保護フィルム(22)を前記基板(W)の前記一側面(2)に取り付けるステップは、
前記第1保護フィルム(22)を前記基板(W)の前記一側面(2)に貼着することにより、前記第1保護フィルム(22)の前記前面(24)の少なくとも前記中央エリアを前記基板(W)の前記一側面(2)に直接接触させるステップと、
前記第1保護フィルム(22)を前記基板(W)の前記一側面(2)に貼着するステップの間に、および/またはその後に、外的刺激を前記第1保護フィルム(22)に付与することにより、前記第1保護フィルム(22)を前記基板(W)の前記一側面(2)に取り付けるステップと、
を含む、
請求項1に記載の方法。 - 前記外的刺激を前記第1保護フィルム(22)に付与するステップは、前記第1保護フィルム(22)を加圧するステップ、および/または前記第1保護フィルム(22)を加熱するステップ、および/または前記第1保護フィルム(22)を冷却するステップ、および/または前記第1保護フィルム(22)を真空引きするステップ、および/または前記第1保護フィルム(22)に光を照射するステップを含む、
請求項2に記載の方法。 - 少なくとも1つの分割線(12)が、前記基板(W)の前記一側面(2)に形成され、
前記レーザー光(LB)が少なくとも1つの前記分割線(12)に沿った複数の位置において前記基板(W)に照射されることにより、複数の改質領域が前記基板(W)に少なくとも1つの前記分割線(12)に沿って形成される、
請求項1~3のいずれか一項に記載の方法。 - 前記第1保護フィルム(22)を前記第2保護フィルム(14)に取り付けることにより、前記基板(W)を前記第1保護フィルム(22)と前記第2保護フィルム(14)との間で包囲するステップをさらに備える、
請求項1~4のいずれか一項に記載の方法。 - 前記第2保護フィルム(14)が前記基板(W)の前記一側面(2)の反対側の面(4)に取り付けられることにより、前記第2保護フィルム(14)の前面(20)の少なくとも中央エリアが前記基板(W)の前記一側面(2)の反対側の面(4)に直接接触する、
請求項1~5のいずれか一項に記載の方法。 - 前記第1保護フィルム(22)は、接着剤層(26)を設けられ、
前記接着剤層(26)は、前記第1保護フィルム(22)の前記前面(24)の周辺エリアのみに設けられ、前記周辺エリアは、前記第1保護フィルム(22)の前記前面(24)の前記中央エリアを取り囲み、
前記第1保護フィルム(22)が前記基板(W)の前記一側面(2)に取り付けられることにより、前記接着剤層(26)が前記基板(W)の前記一側面(2)の周辺部分のみに接触する、
請求項1~6のいずれか一項に記載の方法。 - クッション層が、前記第1保護フィルム(22)の前記前面(24)の反対側の後面(28)に取り付けられる、
請求項1~7のいずれか一項に記載の方法。 - ベースシートが、前記クッション層の後面に取り付けられる、
請求項8に記載の方法。 - 前記第2保護フィルム(14)は伸長可能であり、
前記方法は、前記レーザー光(LB)を前記基板(W)に前記基板(W)の前記一側面(2)の反対側の面(4)から照射するステップの後に、前記第2保護フィルム(14)を径方向に伸長させることで前記デバイス(8)を互いから分離するステップをさらに備える、
請求項1~9のいずれか一項に記載の方法。 - 前記第1保護フィルム(22)は伸長可能であり、
前記方法は、前記レーザー光(LB)を前記基板(W)に前記基板(W)の前記一側面(2)の反対側の面(4)から照射するステップの後に、前記第1保護フィルム(22)を径方向に伸長させることで前記デバイス(8)を互いから分離するステップをさらに備える、
請求項1~9のいずれか一項に記載の方法。 - 前記第1保護フィルム(22)および/または前記第2保護フィルム(14)を環状フレーム(18)に取り付けるステップをさらに備える、
請求項1~11のいずれか一項に記載の方法。 - 前記第1保護フィルム(22)を前記基板(W)の前記一側面(2)から除去するステップをさらに備える、
請求項1~12のいずれか一項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102020210104.3A DE102020210104A1 (de) | 2020-08-10 | 2020-08-10 | Verfahren zum bearbeiten eines substrats |
DE102020210104.3 | 2020-08-10 |
Publications (2)
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JP4563097B2 (ja) | 2003-09-10 | 2010-10-13 | 浜松ホトニクス株式会社 | 半導体基板の切断方法 |
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CN102521260B (zh) | 2011-11-18 | 2014-04-02 | 华为技术有限公司 | 数据预热方法及装置 |
JP6054234B2 (ja) | 2013-04-22 | 2016-12-27 | 株式会社ディスコ | ウエーハの加工方法 |
JP6360411B2 (ja) | 2014-10-09 | 2018-07-18 | 株式会社ディスコ | ウエーハの加工方法 |
CN113921447A (zh) * | 2014-12-29 | 2022-01-11 | 株式会社迪思科 | 保护片、保护片布置、半导体尺寸晶片的处理***和方法 |
DE102015216619B4 (de) * | 2015-08-31 | 2017-08-10 | Disco Corporation | Verfahren zum Bearbeiten eines Wafers |
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