JP2022025161A - イオン液体を含むレジスト下層膜形成組成物 - Google Patents

イオン液体を含むレジスト下層膜形成組成物 Download PDF

Info

Publication number
JP2022025161A
JP2022025161A JP2018231690A JP2018231690A JP2022025161A JP 2022025161 A JP2022025161 A JP 2022025161A JP 2018231690 A JP2018231690 A JP 2018231690A JP 2018231690 A JP2018231690 A JP 2018231690A JP 2022025161 A JP2022025161 A JP 2022025161A
Authority
JP
Japan
Prior art keywords
group
carbon atoms
underlayer film
resist underlayer
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018231690A
Other languages
English (en)
Japanese (ja)
Inventor
哲也 木村
Tetsuya Kimura
裕和 西巻
Hirokazu Nishimaki
裕斗 緒方
Yuto Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to JP2018231690A priority Critical patent/JP2022025161A/ja
Priority to PCT/JP2019/047054 priority patent/WO2020121873A1/ja
Priority to TW108144857A priority patent/TW202036163A/zh
Publication of JP2022025161A publication Critical patent/JP2022025161A/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G10/00Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
    • C08G10/02Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00Technologies relating to chemical industry
    • Y02P20/50Improvements relating to the production of bulk chemicals
    • Y02P20/54Improvements relating to the production of bulk chemicals using solvents, e.g. supercritical solvents or ionic liquids

Landscapes

  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Computer Hardware Design (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2018231690A 2018-12-11 2018-12-11 イオン液体を含むレジスト下層膜形成組成物 Pending JP2022025161A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018231690A JP2022025161A (ja) 2018-12-11 2018-12-11 イオン液体を含むレジスト下層膜形成組成物
PCT/JP2019/047054 WO2020121873A1 (ja) 2018-12-11 2019-12-02 イオン液体を含むレジスト下層膜形成組成物
TW108144857A TW202036163A (zh) 2018-12-11 2019-12-09 含有離子液體之阻劑下層膜形成組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018231690A JP2022025161A (ja) 2018-12-11 2018-12-11 イオン液体を含むレジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
JP2022025161A true JP2022025161A (ja) 2022-02-10

Family

ID=71075691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018231690A Pending JP2022025161A (ja) 2018-12-11 2018-12-11 イオン液体を含むレジスト下層膜形成組成物

Country Status (3)

Country Link
JP (1) JP2022025161A (zh)
TW (1) TW202036163A (zh)
WO (1) WO2020121873A1 (zh)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012013872A (ja) * 2010-06-30 2012-01-19 Nissan Chem Ind Ltd イオン液体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP2012022191A (ja) * 2010-07-15 2012-02-02 Nissan Chem Ind Ltd イオン性重合体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JP6652747B2 (ja) * 2014-11-04 2020-02-26 日産化学株式会社 アリーレン基を有するポリマーを含むレジスト下層膜形成組成物
JP7176844B2 (ja) * 2015-10-19 2022-11-22 日産化学株式会社 長鎖アルキル基含有ノボラックを含むレジスト下層膜形成組成物
JP7021636B2 (ja) * 2016-09-01 2022-02-17 日産化学株式会社 トリアリールジアミン含有ノボラック樹脂を含むレジスト下層膜形成組成物

Also Published As

Publication number Publication date
TW202036163A (zh) 2020-10-01
WO2020121873A1 (ja) 2020-06-18

Similar Documents

Publication Publication Date Title
JP6734569B2 (ja) ピノールノボラック樹脂を含むレジスト下層膜形成組成物
JP6094767B2 (ja) フェニルインドール含有ノボラック樹脂を含むレジスト下層膜形成組成物
JP7021636B2 (ja) トリアリールジアミン含有ノボラック樹脂を含むレジスト下層膜形成組成物
JP6703308B2 (ja) 芳香族メチロール化合物が反応したノボラック樹脂を含むレジスト下層膜形成組成物
JP6137486B2 (ja) 複素環を含む共重合樹脂を含むレジスト下層膜形成組成物
JP6004172B2 (ja) カルボニル基含有カルバゾールノボラックを含むリソグラフィー用レジスト下層膜形成組成物
KR102229657B1 (ko) 비스페놀알데히드를 이용한 노볼락 수지 함유 레지스트 하층막 형성 조성물
JP6583630B2 (ja) 第二アミノ基を有するノボラックポリマーを含むレジスト下層膜形成組成物
CN107533302B (zh) 抗蚀剂图案涂布用组合物
US9395628B2 (en) Resist underlayer film-forming composition containing aryl sulfonate salt having hydroxyl group
JP7265225B2 (ja) 芳香族ビニル化合物が付加したトリアリールジアミン含有ノボラック樹脂を含むレジスト下層膜形成組成物
JP2021105703A (ja) イオン液体を含むレジスト下層膜形成組成物
KR20220161272A (ko) 가교제의 변성이 억제된 레지스트 하층막 형성 조성물
JP2022025161A (ja) イオン液体を含むレジスト下層膜形成組成物
CN116235112A (zh) 包含具有氟烷基的有机酸或其盐的抗蚀剂下层膜形成用组合物