JP2022025161A - イオン液体を含むレジスト下層膜形成組成物 - Google Patents
イオン液体を含むレジスト下層膜形成組成物 Download PDFInfo
- Publication number
- JP2022025161A JP2022025161A JP2018231690A JP2018231690A JP2022025161A JP 2022025161 A JP2022025161 A JP 2022025161A JP 2018231690 A JP2018231690 A JP 2018231690A JP 2018231690 A JP2018231690 A JP 2018231690A JP 2022025161 A JP2022025161 A JP 2022025161A
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- underlayer film
- resist underlayer
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 0 **(*)=C(N(*)*)N(*)* Chemical compound **(*)=C(N(*)*)N(*)* 0.000 description 6
- UVCPHBWNKAXVPC-UHFFFAOYSA-N CCCC[N+]1(C)CCCCC1 Chemical compound CCCC[N+]1(C)CCCCC1 UVCPHBWNKAXVPC-UHFFFAOYSA-N 0.000 description 1
- OGLIVJFAKNJZRE-UHFFFAOYSA-N CCC[N+]1(C)CCCCC1 Chemical compound CCC[N+]1(C)CCCCC1 OGLIVJFAKNJZRE-UHFFFAOYSA-N 0.000 description 1
- WACRAFUNNYGNEQ-UHFFFAOYSA-N CC[N+]1(C)CCCCC1 Chemical compound CC[N+]1(C)CCCCC1 WACRAFUNNYGNEQ-UHFFFAOYSA-N 0.000 description 1
- NNCAWEWCFVZOGF-UHFFFAOYSA-N C[N+]1(C)CCCCC1 Chemical compound C[N+]1(C)CCCCC1 NNCAWEWCFVZOGF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G10/00—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
- C08G10/02—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/54—Improvements relating to the production of bulk chemicals using solvents, e.g. supercritical solvents or ionic liquids
Landscapes
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Computer Hardware Design (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018231690A JP2022025161A (ja) | 2018-12-11 | 2018-12-11 | イオン液体を含むレジスト下層膜形成組成物 |
PCT/JP2019/047054 WO2020121873A1 (ja) | 2018-12-11 | 2019-12-02 | イオン液体を含むレジスト下層膜形成組成物 |
TW108144857A TW202036163A (zh) | 2018-12-11 | 2019-12-09 | 含有離子液體之阻劑下層膜形成組成物 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018231690A JP2022025161A (ja) | 2018-12-11 | 2018-12-11 | イオン液体を含むレジスト下層膜形成組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2022025161A true JP2022025161A (ja) | 2022-02-10 |
Family
ID=71075691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018231690A Pending JP2022025161A (ja) | 2018-12-11 | 2018-12-11 | イオン液体を含むレジスト下層膜形成組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2022025161A (zh) |
TW (1) | TW202036163A (zh) |
WO (1) | WO2020121873A1 (zh) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012013872A (ja) * | 2010-06-30 | 2012-01-19 | Nissan Chem Ind Ltd | イオン液体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
JP2012022191A (ja) * | 2010-07-15 | 2012-02-02 | Nissan Chem Ind Ltd | イオン性重合体を含むレジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
JP6652747B2 (ja) * | 2014-11-04 | 2020-02-26 | 日産化学株式会社 | アリーレン基を有するポリマーを含むレジスト下層膜形成組成物 |
JP7176844B2 (ja) * | 2015-10-19 | 2022-11-22 | 日産化学株式会社 | 長鎖アルキル基含有ノボラックを含むレジスト下層膜形成組成物 |
JP7021636B2 (ja) * | 2016-09-01 | 2022-02-17 | 日産化学株式会社 | トリアリールジアミン含有ノボラック樹脂を含むレジスト下層膜形成組成物 |
-
2018
- 2018-12-11 JP JP2018231690A patent/JP2022025161A/ja active Pending
-
2019
- 2019-12-02 WO PCT/JP2019/047054 patent/WO2020121873A1/ja active Application Filing
- 2019-12-09 TW TW108144857A patent/TW202036163A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW202036163A (zh) | 2020-10-01 |
WO2020121873A1 (ja) | 2020-06-18 |
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