JP2021170688A - Light-emitting device, integrated light-emitting device, and light-emitting module - Google Patents

Light-emitting device, integrated light-emitting device, and light-emitting module Download PDF

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JP2021170688A
JP2021170688A JP2021129946A JP2021129946A JP2021170688A JP 2021170688 A JP2021170688 A JP 2021170688A JP 2021129946 A JP2021129946 A JP 2021129946A JP 2021129946 A JP2021129946 A JP 2021129946A JP 2021170688 A JP2021170688 A JP 2021170688A
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light emitting
light
emitting device
emitting element
sealing member
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JP2021170688A5 (en
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元量 山田
Motokazu Yamada
有一 山田
Yuichi Yamada
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Nichia Chemical Industries Ltd
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Abstract

To provide a light-emitting device that enables wide light distribution without using a secondary lens.SOLUTION: A light-emitting device includes: a base 101 including a conductive wiring 102; a light-emitting element 105 mounted on the base 101 and having a light reflective film 106 on an upper surface of the light-emitting element; and a sealing member 108 covering the light-emitting element 105. A ratio (H/W) of a height (H) of the sealing member 108 to a width (W) thereof is less than 0.5.SELECTED DRAWING: Figure 1

Description

本開示は、発光装置、集積型発光装置および発光モジュールに関する。 The present disclosure relates to a light emitting device, an integrated light emitting device and a light emitting module.

近年、様々な電子部品が提案され、また実用化されており、これらに求められる性能も高くなっている。特に、電子部品には、厳しい使用環境下でも長時間性能を維持することが求められている。このような要求は、発光ダイオード（ＬＥＤ：Light Emitting Diode）をはじめとする半導体発光素子を利用した発光装置についても例外ではない。すなわち、一般照明分野や車載照明分野において、発光装置に要求される性能は日増しに高まっており、更なる高出力（高輝度）化や高信頼性が要求されている。さらに、これらの高い性能を維持しつつ、低価格で供給することも発光装置には要求されている。
液晶テレビに使用されるバックライトや一般照明器具等では、デザイン製が重要視され、薄型化の要望が高い。 In recent years, various electronic components have been proposed and put into practical use, and the performance required for them is also increasing. In particular, electronic components are required to maintain their performance for a long time even in a harsh usage environment. Such a requirement is no exception to a light emitting device using a semiconductor light emitting element such as a light emitting diode (LED: Light Emitting Diode). That is, in the general lighting field and the in-vehicle lighting field, the performance required for the light emitting device is increasing day by day, and further high output (high brightness) and high reliability are required. Furthermore, the light emitting device is also required to be supplied at a low price while maintaining these high performances.
For backlights and general lighting fixtures used in LCD TVs, design products are regarded as important, and there is a high demand for thinner products.

例えば特許文献１には、サブマウントにフリップチップ実装された発光素子の上面にリフレクタを設けることで、バックライトの薄型化を実現する発光装置が開示されている。 For example, Patent Document 1 discloses a light emitting device that realizes a thin backlight by providing a reflector on the upper surface of a light emitting element mounted on a submount with a flip chip.

特開２００８−４９４８号公報Japanese Unexamined Patent Publication No. 2008-4948

特許文献１の発光装置によると、広配光化された発光装置を実現することができるものの、バックライトの薄型化に伴い、より広配光を実現可能な発光装置が求められている。 According to the light emitting device of Patent Document 1, although it is possible to realize a light emitting device having a wide light distribution, there is a demand for a light emitting device capable of realizing a wider light distribution as the backlight becomes thinner.

本発明に係る実施形態は、かかる事情に鑑みてなされたものであり、二次レンズを使用することなく、広配光を可能とする発光装置を提供する。 An embodiment of the present invention has been made in view of such circumstances, and provides a light emitting device capable of wide light distribution without using a secondary lens.

本実施形態に係る発光装置は、導体配線を有する基体と、前記基体に実装され、第１の光を発光する発光素子と、前記発光素子の上面に設けられた光反射膜と、前記発光素子及び光反射膜を被覆する封止部材と、を有し、前記封止部材の幅（Ｗ）に対する高さ（Ｈ）の比（Ｈ／Ｗ）が０．５より小さい。 The light emitting device according to the present embodiment includes a substrate having conductor wiring, a light emitting element mounted on the substrate and emitting the first light, a light reflecting film provided on the upper surface of the light emitting element, and the light emitting element. And a sealing member that covers the light-reflecting film, and the ratio (H / W) of the height (H) to the width (W) of the sealing member is smaller than 0.5.

本発明に係る実施形態によれば、二次レンズを使用することなく、広配光を可能とする。 According to the embodiment of the present invention, wide light distribution is possible without using a secondary lens.

本実施形態の発光装置の一例を示す断面図である。It is sectional drawing which shows an example of the light emitting device of this embodiment. 本実施形態の光反射膜の光透過率の角度依存特性を示す図である。It is a figure which shows the angle-dependent characteristic of the light transmittance of the light-reflecting film of this embodiment. 本実施形態の発光装置の光反射膜の波長帯域と発光素子の発光波長の関係を示す図である。It is a figure which shows the relationship between the wavelength band of the light reflection film of the light emitting device of this embodiment, and the light emitting wavelength of a light emitting element. 本実施形態の発光装置の配光特性図である。It is a light distribution characteristic diagram of the light emitting device of this embodiment. 二次レンズを使用した比較例の発光装置の配光特性図である。It is a light distribution characteristic diagram of the light emitting device of the comparative example using a secondary lens. 本実施形態にかかる発光装置Ｎｏ．１の配光特性を示す図である。The light emitting device No. according to the present embodiment. It is a figure which shows the light distribution characteristic of 1. 本実施形態にかかる発光装置Ｎｏ．２の配光特性を示す図である。The light emitting device No. according to the present embodiment. It is a figure which shows the light distribution characteristic of 2. 本実施形態にかかる発光装置Ｎｏ．３の配光特性を示す図である。The light emitting device No. according to the present embodiment. It is a figure which shows the light distribution characteristic of 3. 本実施形態にかかる発光装置Ｎｏ．４の配光特性を示す図である。The light emitting device No. according to the present embodiment. It is a figure which shows the light distribution characteristic of 4. 本実施形態にかかる発光装置Ｎｏ．５の配光特性を示す図である。The light emitting device No. according to the present embodiment. It is a figure which shows the light distribution characteristic of 5. 本実施形態にかかる発光装置Ｎｏ．６の配光特性を示す図である。The light emitting device No. according to the present embodiment. It is a figure which shows the light distribution characteristic of 6. 本実施形態にかかる発光装置Ｎｏ．７の配光特性を示す図である。The light emitting device No. according to the present embodiment. It is a figure which shows the light distribution characteristic of 7. 本実施形態にかかる発光装置Ｎｏ．８の配光特性を示す図である。The light emitting device No. according to the present embodiment. It is a figure which shows the light distribution characteristic of 8. 本実施形態にかかる発光装置Ｎｏ．９の配光特性を示す図である。The light emitting device No. according to the present embodiment. It is a figure which shows the light distribution characteristic of 9. 本実施形態の発光モジュールの一例を示す断面図である。It is sectional drawing which shows an example of the light emitting module of this embodiment. 光反射板の一例を示す図である。It is a figure which shows an example of a light reflector. 光反射部材を配置していない発光モジュールの輝度分布特性を示す図である。It is a figure which shows the luminance distribution characteristic of the light emitting module which does not arrange the light-reflecting member. 光反射部材を配置した実施例２の発光モジュールの輝度分布特性を示す図である。It is a figure which shows the luminance distribution characteristic of the light emitting module of Example 2 which arranged the light-reflecting member.

以下、本発明の実施の形態について適宜図面を参照して説明する。ただし、以下に説明する発光装置は、技術思想を具体化するためのものであって、特定的な記載がない限り、本発明を以下のものに限定しない。また、一つの実施の形態、実施例において説明する内容は、他の実施の形態、実施例にも適用可能である。
さらに以下の説明において、同一の名称、符号については同一もしくは同質の部材を示しており、詳細な説明を適宜省略する。さらに、本発明を構成する各要素は、複数の要素を同一の部材で構成して一の部材で複数の要素を兼用する態様としてもよいし、逆に一の部材の機能を複数の部材で分担して実現することもできる。 Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light emitting device described below is for embodying the technical idea, and the present invention is not limited to the following unless otherwise specified. Further, the contents described in one embodiment and the embodiment can be applied to other embodiments and the examples.
Further, in the following description, members having the same or the same quality are shown with the same name and reference numeral, and detailed description thereof will be omitted as appropriate. Further, each element constituting the present invention may be configured such that a plurality of elements are composed of the same member and the plurality of elements are combined with one member, or conversely, the function of one member is performed by the plurality of members. It can also be shared and realized.

［第１実施形態］
図１は、第１実施形態の発光装置の一例を示す概略構造図である。
図１に示されるように、本実施形態は、導体配線１０２を有する基体１０１と、基体１０１に載置される発光素子１０５を有する。発光素子１０５は、基体１０１の表面に設けられた少なくとも一対の導体配線１０２に跨がるように、接続部材１０３を介してフリップチップ実装されている。発光素子１０５の光取り出し面側（発光素子１０５の上面）には光反射膜１０６が形成されている。導体配線の少なくとも一部には、絶縁部材１０４が設けられていてもよく、導体配線１０２の上面のうち、発光素子１０５と電気的に接続される領域は、絶縁部材１０４から露出されている。 [First Embodiment]
FIG. 1 is a schematic structural diagram showing an example of the light emitting device of the first embodiment.
As shown in FIG. 1, the present embodiment has a base 101 having a conductor wiring 102 and a light emitting element 105 mounted on the base 101. The light emitting element 105 is flip-chip mounted via a connecting member 103 so as to straddle at least a pair of conductor wirings 102 provided on the surface of the substrate 101. A light reflecting film 106 is formed on the light extraction surface side (upper surface of the light emitting element 105) of the light emitting element 105. An insulating member 104 may be provided on at least a part of the conductor wiring, and a region of the upper surface of the conductor wiring 102 that is electrically connected to the light emitting element 105 is exposed from the insulating member 104.

光反射膜１０６の光透過率は、発光素子１０５から入射される光に対して、入射角依存性を有する。図２に、本実施形態の光反射膜１０６の光透過率の入射角依存特性を示す。光反射膜１０６は、発光素子１０５の上面に対して垂直方向には殆ど光を通さないが、垂直方向から角度が付くと光の透過量が増加する。具体的には、入射角が、−３０°〜３０°の範囲内では透過率が１０％程度であるのに対して、入射角が−３０°より小さくなると徐々に透過率が大きくなって−５０°より小さくなると急激に透過率が大きくなり、同様に、入射角が３０°より大きくなると徐々に透過率が大きくなって５０°より大きくなると急激に透過率が大きくなる。つまり、光反射膜の第１の光に対する光透過率は、入射角の絶対値が大きくなるにしたがって高くなる。この様な膜にすることで図４に示す様なバットウイング配光特性を実現することが出来る。
ここで、バットウイング配光特性とは、配光角が９０°以下の第１領域に配光角が９０°のときの強度より大きい強度の第１ピークを有し、配光角が９０°以上の第２領域に配光角が９０°のときの強度より大きい強度の第２ピークを有するような配光特性を言う。 The light transmittance of the light reflecting film 106 has an incident angle dependence with respect to the light incident from the light emitting element 105. FIG. 2 shows the incident angle-dependent characteristics of the light transmittance of the light reflecting film 106 of the present embodiment. The light reflecting film 106 hardly transmits light in the direction perpendicular to the upper surface of the light emitting element 105, but the amount of light transmitted increases when an angle is formed from the vertical direction. Specifically, when the incident angle is in the range of -30 ° to 30 °, the transmittance is about 10%, whereas when the incident angle is smaller than -30 °, the transmittance gradually increases-. When it is smaller than 50 °, the transmittance increases sharply. Similarly, when the incident angle is larger than 30 °, the transmittance gradually increases, and when it becomes larger than 50 °, the transmittance increases sharply. That is, the light transmittance of the light reflecting film with respect to the first light increases as the absolute value of the incident angle increases. By forming such a film, the butt wing light distribution characteristics as shown in FIG. 4 can be realized.
Here, the bat wing light distribution characteristic has a first peak having an intensity higher than the intensity when the light distribution angle is 90 ° in the first region where the light distribution angle is 90 ° or less, and the light distribution angle is 90 °. It refers to a light distribution characteristic having a second peak having an intensity higher than the intensity when the light distribution angle is 90 ° in the above second region.

発光素子１０５は、透光性の封止部材１０８により被覆される。封止部材１０８は、発光素子１０５を外部環境から保護するとともに、発光素子から出力される光を光学的に制御するため、発光素子１０５を被覆するように基体上に配置される部材である。封止部材１０８は略ドーム状に形成されており、光反射膜１０６付きの発光素子１０５と、発光素子１０５の周囲の導体配線１０２の表面及び接続部材１０３を含む発光素子１０５と導体配線１０２の接合部を被覆する。つまり、反射膜１０６の上面および側面は封止部材１０８と接しており、反射膜１０６で覆われていない発光素子１０５の側面も封止部材１０８と接している。なお、この接合部は封止部材１０８とは別にアンダーフィルを用いて被覆されていてもよい。この場合は、アンダーフィルの上面および発光素子を被覆するように封止部材１０８が形成される。本実施形態においては、発光素子１０５は封止部材１０８で直接被覆されている。 The light emitting element 105 is covered with a translucent sealing member 108. The sealing member 108 is a member arranged on the substrate so as to cover the light emitting element 105 in order to protect the light emitting element 105 from the external environment and optically control the light output from the light emitting element. The sealing member 108 is formed in a substantially dome shape, and the light emitting element 105 with the light reflecting film 106, the surface of the conductor wiring 102 around the light emitting element 105, and the light emitting element 105 including the connecting member 103 and the conductor wiring 102. Cover the joint. That is, the upper surface and the side surface of the reflective film 106 are in contact with the sealing member 108, and the side surface of the light emitting element 105 not covered with the reflective film 106 is also in contact with the sealing member 108. The joint may be covered with an underfill separately from the sealing member 108. In this case, the sealing member 108 is formed so as to cover the upper surface of the underfill and the light emitting element. In this embodiment, the light emitting element 105 is directly covered with the sealing member 108.

封止部材１０８は、上面視においてその外形が円形もしくは楕円形となるように形成されることが好ましく、光軸方向の封止部材の高さ（Ｈ）が、上面視における封止部材の径（幅：Ｗ）の０．５より小さい比率で形成されている。尚、楕円形の場合、幅の長さには長径と短径が存在するが、本明細書では短径を封止径（Ｗ）とする。封止部材１０８の表面は凸状の曲面で形成されている。
この様な構成とすることで、発光素子１０５から出た光は、封止部材１０８と空気の界面で屈折し、より広配光化させることが可能となる。
ここで、封止部材の高さ（Ｈ）とは、図１に示すように、発光素子１０５の実装面からの高さを指すものとする。また、封止部材の幅（Ｗ）とは、封止部材の底面の形状が円形の場合は上述のように径を指すものとし、その他の形状の場合は、もっとも長さの短いところのことを指すものとする。 The sealing member 108 is preferably formed so that its outer shape is circular or elliptical in the top view, and the height (H) of the sealing member in the optical axis direction is the diameter of the sealing member in the top view. It is formed in a ratio smaller than 0.5 of (width: W). In the case of an elliptical shape, there are a major axis and a minor axis in the width length, but in the present specification, the minor axis is defined as the sealing diameter (W). The surface of the sealing member 108 is formed by a convex curved surface.
With such a configuration, the light emitted from the light emitting element 105 is refracted at the interface between the sealing member 108 and the air, and the light distribution can be made wider.
Here, the height (H) of the sealing member refers to the height of the light emitting element 105 from the mounting surface, as shown in FIG. Further, the width (W) of the sealing member means the diameter as described above when the shape of the bottom surface of the sealing member is circular, and in the case of other shapes, the shortest length. Shall point to.

図４に封止部材１０８の有無による配光特性の変化の例を示す。実施形態１の発光装置１００の配光特性を図４中に実線で示す。また、封止部材１０８を形成しない以外は実施形態１と同様に作成した発光装置の配光特性を点線で示す。図４に示す様に、第１実施形態の発光装置では、封止部材１０８を形成しない発光装置よりも、配光角が小さくなる方向に第１ピークが移動し、配光角が大きくなる方向に第２ピークが移動して、より広配光化されている。 FIG. 4 shows an example of changes in the light distribution characteristics depending on the presence or absence of the sealing member 108. The light distribution characteristics of the light emitting device 100 of the first embodiment are shown by solid lines in FIG. Further, the light distribution characteristics of the light emitting device produced in the same manner as in the first embodiment are shown by dotted lines except that the sealing member 108 is not formed. As shown in FIG. 4, in the light emitting device of the first embodiment, the first peak moves in the direction in which the light distribution angle becomes smaller and the light distribution angle becomes larger than in the light emitting device in which the sealing member 108 is not formed. The second peak has moved to a wider light distribution.

このように、光反射膜１０６と封止部材１０８の双方を用いることにより、二次レンズを用いることなく所望の配光特性を得ることができる。つまり、光反射膜１０６を形成することで発光素子１０５の直上輝度を低減する一方、封止部材１０８では発光素子１０５からの光を広配光化することに特化することができるので、レンズ機能を有する封止部材の大幅な小型化を実現することができる。言い換えれば、従来は、封止部材だけで、発光素子の直上輝度を低減しかつ広配光化する必要があったために、封止部材の高さを高くする必要があった。これに対して、本実施形態の発光装置では、発光素子１０５の直上輝度を低減する光反射膜１０６を備えることによりバットウイング配光特性を実現し、封止部材１０８の機能をより広配光化することに特化したことから、小型化が実現できたものである。これにより、後述するように、輝度むらを改善した薄型のバックライトモジュール（発光モジュール）が実現可能となる。図５に比較例として、二次レンズを用いた際の配光特性を示す。本実施形態の発光装置によれば、二次レンズを用いなくても、二次レンズを用いた場合と同等の配光特性を得ることができる。 By using both the light reflecting film 106 and the sealing member 108 in this way, it is possible to obtain desired light distribution characteristics without using a secondary lens. That is, while the brightness directly above the light emitting element 105 is reduced by forming the light reflecting film 106, the sealing member 108 can be specialized in broadening the light distribution of the light from the light emitting element 105. It is possible to realize a significant reduction in the size of the sealing member having a function. In other words, conventionally, it is necessary to increase the height of the sealing member because it is necessary to reduce the brightness directly above the light emitting element and widen the light distribution only by the sealing member. On the other hand, in the light emitting device of the present embodiment, the butt wing light distribution characteristic is realized by providing the light reflecting film 106 that reduces the brightness directly above the light emitting element 105, and the function of the sealing member 108 is broader. Since we specialized in miniaturization, we were able to achieve miniaturization. As a result, as will be described later, a thin backlight module (light emitting module) with improved brightness unevenness can be realized. FIG. 5 shows the light distribution characteristics when a secondary lens is used as a comparative example. According to the light emitting device of the present embodiment, it is possible to obtain the same light distribution characteristics as when a secondary lens is used without using a secondary lens.

ここで、封止部材１０８の光軸方向の高さ（Ｈ）と、上面視における封止部材の径（幅：Ｗ）を変化させて９つの発光装置を作成し、配光特性を確認した結果を図６に示す。発光素子は、平面視が１辺６００ｍμｍの正方形で、厚みが１５０μｍの青色ＬＥＤを用いる。また、光反射膜１０６は、ＳｉＯ２層（８２ｎｍ）とＺｒＯ２層（５４ｎｍ）の繰り返しで１１層構成とする。
９つの発光装置Ｎｏ．１〜Ｎｏ．９における、封止部材の高さ（Ｈ）と封止部材の径（幅：Ｗ）の比率を表１に示す。発光装置Ｎｏ．１〜Ｎｏ．９の配光特性を図６Ａ〜図６Ｉに示す。

Figure 2021170688
これらの実験結果より、封止部材の径の違いによる配光特性の差は小さく、封止部材の高さ（Ｈ）と封止部材の径（幅：Ｗ）の比率が配向特性に影響を与えるものと考えられる。
そして、図６のグラフから、より広配光とするためには、封止部材の幅（Ｗ）に対する高さ（Ｈ）の比（Ｈ／Ｗ）を０．３以下とすることがより好ましいことがわかる。 Here, nine light emitting devices were created by changing the height (H) of the sealing member 108 in the optical axis direction and the diameter (width: W) of the sealing member in the top view, and the light distribution characteristics were confirmed. The results are shown in FIG. As the light emitting element, a blue LED having a side view of 600 μm and a thickness of 150 μm is used. Further, the light reflecting film 106 has an 11-layer structure by repeating the SiO 2 layer (82 nm) and the ZrO 2 layer (54 nm).
Nine light emitting devices No. 1-No. Table 1 shows the ratio of the height (H) of the sealing member and the diameter (width: W) of the sealing member in 9. Light emitting device No. 1-No. The light distribution characteristics of FIG. 9 are shown in FIGS. 6A to 6I.
Figure 2021170688
 From these experimental results, the difference in light distribution characteristics due to the difference in the diameter of the sealing member is small, and the ratio of the height (H) of the sealing member to the diameter (width: W) of the sealing member affects the orientation characteristics. It is thought to give.
Then, from the graph of FIG. 6, in order to obtain a wider light distribution, it is more preferable that the ratio (H / W) of the height (H) to the width (W) of the sealing member is 0.3 or less. You can see that.

以下、本実施の形態に係る発光装置１００の好ましい形態について説明する。
（基体１０１）
基体１０１は、発光素子１０５を載置するための部材である。基体１０１はその表面に、発光素子１０５に電力を供給するための導体配線１０２を有している。
基体１０１の材料としては、例えば、セラミックス、フェノール樹脂、エポキシ樹脂、ポリイミド樹脂、ＢＴレジン、ポリフタルアミド（ＰＰＡ）、ポリエチレンテレフタレート（ＰＥＴ）等の樹脂が挙げられる。なかでも、低コストと、成型容易性の点から、樹脂を材料として選択することが好ましい。基板の厚みは適宜選択することができ、ロール・ツー・ロール方式で製造可能なフレキシブル基板、あるいはリジット基板のいずれであってもよい。リジット基板は湾曲可能な薄型リジット基板であってもよい。 Hereinafter, a preferred embodiment of the light emitting device 100 according to the present embodiment will be described.
(Hypokeimenon 101)
The substrate 101 is a member on which the light emitting element 105 is placed. The substrate 101 has a conductor wiring 102 on its surface for supplying electric power to the light emitting element 105.
Examples of the material of the substrate 101 include resins such as ceramics, phenol resin, epoxy resin, polyimide resin, BT resin, polyphthalamide (PPA), and polyethylene terephthalate (PET). Among them, it is preferable to select a resin as a material from the viewpoint of low cost and ease of molding. The thickness of the substrate can be appropriately selected, and either a flexible substrate that can be manufactured by a roll-to-roll method or a rigid substrate may be used. The rigid substrate may be a curvable thin rigid substrate.

耐熱性及び耐光性に優れた発光装置とするためには、セラミックスを基体１０１の材料として選択することが好ましい。セラミックスとしては、例えば、アルミナ、ムライト、フォルステライト、ガラスセラミックス、窒化物系（例えば、ＡｌＮ）、炭化物系（例えば、ＳｉＣ）等が挙げられる。なかでも、アルミナからなる又はアルミナを主成分とするセラミックスが好ましい。 In order to obtain a light emitting device having excellent heat resistance and light resistance, it is preferable to select ceramics as the material of the substrate 101. Examples of the ceramics include alumina, mullite, forsterite, glass ceramics, nitride-based (for example, AlN), carbide-based (for example, SiC) and the like. Of these, ceramics made of alumina or containing alumina as a main component are preferable.

また、基体１０１を構成する材料に樹脂を用いる場合は、ガラス繊維や、ＳｉＯ２、ＴｉＯ２、Ａｌ２Ｏ３等の無機フィラーを樹脂に混合し、機械的強度の向上、熱膨張率の低減、光反射率の向上等を図ることもできる。また、基体１０１としては、一対の導体配線１０２を絶縁分離できるものであればよく、金属部材に絶縁層を形成している、いわゆる金属基板を用いてもよい。 When a resin is used as the material constituting the substrate 101, glass fibers and inorganic fillers such as SiO 2 , TiO 2 and Al 2 O 3 are mixed with the resin to improve the mechanical strength and reduce the coefficient of thermal expansion. , It is also possible to improve the light reflectance. Further, the substrate 101 may be a so-called metal substrate in which an insulating layer is formed on a metal member, as long as the pair of conductor wirings 102 can be insulated and separated.

（導体配線１０２）
導体配線１０２は、発光素子１０５の電極と電気的に接続され、外部からの電流（電力）を供給するための部材である。すなわち、外部から通電させるための電極またはその一部としての役割を担うものである。通常、正と負の少なくとも２つに離間して形成される。 (Conductor wiring 102)
The conductor wiring 102 is a member that is electrically connected to the electrode of the light emitting element 105 and is for supplying an electric current (electric power) from the outside. That is, it plays a role as an electrode for energizing from the outside or a part thereof. It is usually formed at least two apart, positive and negative.

導体配線１０２は、発光素子１０５の載置面となる基体の、少なくとも上面に形成される。導体配線１０２の材料は、基体１０１として用いられる材料や製造方法等によって適宜選択することができる。例えば、基体１０１の材料としてセラミックスを用いる場合は、導体配線１０２の材料は、セラミックスシートの焼成温度にも耐え得る高融点を有する材料が好ましく、例えば、タングステン、モリブデンのような高融点の金属を用いるのが好ましい。さらに、その上に鍍金やスパッタリング、蒸着などにより、ニッケル、金、銀など他の金属材料にて被覆してもよい。 The conductor wiring 102 is formed on at least the upper surface of the substrate which is the mounting surface of the light emitting element 105. The material of the conductor wiring 102 can be appropriately selected depending on the material used as the substrate 101, the manufacturing method, and the like. For example, when ceramics are used as the material of the substrate 101, the material of the conductor wiring 102 is preferably a material having a high melting point that can withstand the firing temperature of the ceramic sheet, and for example, a metal having a high melting point such as tungsten or molybdenum is used. It is preferable to use it. Further, it may be coated with another metal material such as nickel, gold, or silver by plating, sputtering, vapor deposition, or the like.

また、基体１０１の材料としてガラスエポキシ樹脂を用いる場合は、導体配線１０２の材料は、加工し易い材料が好ましい。また、射出成型されたエポキシ樹脂を用いる場合には、導体配線１０２の材料は、打ち抜き加工、エッチング加工、屈曲加工などの加工がし易く、かつ、比較的大きい機械的強度を有する部材が好ましい。具体例としては、銅、アルミニウム、金、銀、タングステン、鉄、ニッケル等の金属、または、鉄−ニッケル合金、りん青銅、鉄入り銅、モリブデン等の金属層やリードフレーム等が挙げられる。また、リードフレームの表面を、リードフレーム本体とは異なる他の金属材料で被覆してもよい。この材料は特に限定されないが、例えば、銀のみ、あるいは、銀と、銅、金、アルミニウム、ロジウム等との合金、または、これら、銀や各合金を用いた多層膜とすることができる。また、金属材料の被覆方法は、鍍金法の他にスパッタ法や蒸着法などを用いることができる。 When a glass epoxy resin is used as the material of the substrate 101, the material of the conductor wiring 102 is preferably a material that is easy to process. When an injection-molded epoxy resin is used, the material of the conductor wiring 102 is preferably a member that is easily punched, etched, bent, or has a relatively large mechanical strength. Specific examples include metals such as copper, aluminum, gold, silver, tungsten, iron and nickel, metal layers such as iron-nickel alloys, phosphor bronze, iron-containing copper and molybdenum, and lead frames. Further, the surface of the lead frame may be covered with a metal material different from that of the lead frame body. This material is not particularly limited, and may be, for example, silver alone, an alloy of silver and copper, gold, aluminum, rhodium, or the like, or a multilayer film using these silver or each alloy. Further, as a method for coating the metal material, a sputtering method, a vapor deposition method or the like can be used in addition to the plating method.

（接続部材１０３）
接続部材１０３は、発光素子１０５を基体１０１または導体配線１０２に固定するための部材である。本実施形態のようにフリップチップ実装の場合は導電性の部材が用いられる。具体的にはＡｕ含有合金、Ａｇ含有合金、Ｐｄ含有合金、Ｉｎ含有合金、Ｐｂ−Ｐｄ含有合金、Ａｕ−Ｇａ含有合金、Ａｕ−Ｓｎ含有合金、Ｓｎ含有合金、Ｓｎ−Ｃｕ含有合金、Ｓｎ−Ｃｕ−Ａｇ含有合金、Ａｕ−Ｇｅ含有合金、Ａｕ−Ｓｉ含有合金、Ａｌ含有合金、Ｃｕ−Ｉｎ含有合金、金属とフラックスの混合物等を挙げることができる。 (Connecting member 103)
The connecting member 103 is a member for fixing the light emitting element 105 to the substrate 101 or the conductor wiring 102. In the case of flip-chip mounting as in this embodiment, a conductive member is used. Specifically, Au-containing alloys, Ag-containing alloys, Pd-containing alloys, In-containing alloys, Pb-Pd-containing alloys, Au-Ga-containing alloys, Au-Sn-containing alloys, Sn-containing alloys, Sn-Cu-containing alloys, Sn- Examples thereof include Cu-Ag-containing alloys, Au-Ge-containing alloys, Au-Si-containing alloys, Al-containing alloys, Cu-In-containing alloys, and mixtures of metals and fluxes.

接続部材１０３としては、液状、ペースト状、固体状（シート状、ブロック状、粉末状、ワイヤー状）のものを用いることができ、組成や基体の形状等に応じて、適宜選択することができる。また、これらの接続部材１０３は、単一部材で形成してもよく、あるいは、数種のものを組み合わせて用いてもよい。 As the connecting member 103, liquid, paste, or solid (sheet, block, powder, wire) can be used, and can be appropriately selected depending on the composition, the shape of the substrate, and the like. .. Further, these connecting members 103 may be formed of a single member, or may be used in combination of several kinds.

（絶縁部材１０４）
導体配線１０２は、発光素子１０５や他材料と電気的に接続する部分以外は絶縁部材１０４で被覆されている事が好ましい。すなわち、各図に示されるように、基体上には、導体配線１０２を絶縁被覆するためのレジストが配置されていても良く、絶縁部材１０４はレジストとして機能させることができる。 (Insulation member 104)
It is preferable that the conductor wiring 102 is covered with the insulating member 104 except for the portion that is electrically connected to the light emitting element 105 and other materials. That is, as shown in each figure, a resist for insulatingly coating the conductor wiring 102 may be arranged on the substrate, and the insulating member 104 can function as a resist.

絶縁部材１０４を配置させる場合には、導体配線１０２の絶縁を行う目的だけでなく、白色系のフィラーを含有させることにより、光の漏れや吸収を防いで、発光装置１００の光取り出し効率を上げることもできる。
絶縁部材１０４の材料は、発光素子からの光の吸収が少ない材料であり、絶縁性であれば特に限定されない。例えば、エポキシ、シリコーン、変性シリコーン、ウレタン樹脂、オキセタン樹脂、アクリル、ポリカーボネイト、ポリイミド等を用いることができる。 When the insulating member 104 is arranged, not only the purpose of insulating the conductor wiring 102 but also the inclusion of a white filler prevents light leakage and absorption and improves the light extraction efficiency of the light emitting device 100. You can also do it.
The material of the insulating member 104 is a material that absorbs less light from the light emitting element, and is not particularly limited as long as it has insulating properties. For example, epoxy, silicone, modified silicone, urethane resin, oxetane resin, acrylic, polycarbonate, polyimide and the like can be used.

（発光素子１０５）
基体に搭載される発光素子１０５は、公知のものを利用できる。本実施形態においては、発光素子１０５として発光ダイオードを用いるのが好ましい。
発光素子１０５は、任意の波長のものを選択することができる。例えば、青色、緑色の発光素子としては、ＺｎＳｅや窒化物系半導体（ＩｎｘＡｌｙＧａ１−ｘ−ｙＮ、０≦Ｘ
、０≦Ｙ、Ｘ＋Ｙ≦１）、ＧａＰを用いたものを用いることができる。成長基板として透光性のサファイア基板等を用いることができる。また、赤色の発光素子としては、ＧａＡｌＡｓ、ＡｌＩｎＧａＰなどを用いることができる。さらに、これ以外の材料からなる半導体発光素子を用いることもできる。用いる発光素子の組成や発光色、大きさや、個数などは目的に応じて適宜選択することができる。 (Light emitting element 105)
As the light emitting element 105 mounted on the substrate, a known one can be used. In this embodiment, it is preferable to use a light emitting diode as the light emitting element 105.
As the light emitting element 105, one having an arbitrary wavelength can be selected. For example, the blue, the green light emitting element, ZnSe and nitride semiconductor (In x Al y Ga 1- x-y N, 0 ≦ X
, 0 ≦ Y, X + Y ≦ 1), and those using GaP can be used. A translucent sapphire substrate or the like can be used as the growth substrate. Further, as the red light emitting element, GaAlAs, AlInGaP and the like can be used. Further, a semiconductor light emitting device made of a material other than this can also be used. The composition, emission color, size, number, etc. of the light emitting element to be used can be appropriately selected according to the purpose.

半導体層の材料やその混晶度によって発光波長を種々選択することができる。発光素子はフリップチップ実装が可能なように、同一面側に正負の電極を有するものであってもよいし、異なる面に正負の電極を有するものであってもよい。 Various emission wavelengths can be selected depending on the material of the semiconductor layer and its mixed crystalliteness. The light emitting element may have positive and negative electrodes on the same surface side or may have positive and negative electrodes on different surfaces so that the flip chip can be mounted.

本実施形態の発光素子１０５は、透光性の基板と、その基板の上に積層された半導体層を有する。この半導体層には、順にｎ型半導体層、活性層、ｐ型半導体層が形成されており、ｎ型半導体層にｎ型電極が形成されており、ｐ型半導体層にｐ型電極が形成されている。 The light emitting device 105 of the present embodiment has a translucent substrate and a semiconductor layer laminated on the substrate. An n-type semiconductor layer, an active layer, and a p-type semiconductor layer are formed in this semiconductor layer in this order, an n-type electrode is formed on the n-type semiconductor layer, and a p-type electrode is formed on the p-type semiconductor layer. ing.

発光素子１０５は、図１に示すように、接続部材１０３を介して基体１０１の表面の導体配線１０２にフリップチップ実装されており、電極の形成された面と対向する面、すなわち透光性基板の主面が光取り出し面となる。しかしながら、本実施形態においてはこの光取り出し面に光反射膜１０６を形成するため、発光素子１０５の側面が実質的な光取り出し面となる。つまり、発光素子１０５から出射して、発光素子１０５の主面側に向かった光の一部は光反射膜１０６で発光素子１０５内に戻されて、発光素子１０５内部で反射を繰り返して、発光素子１０５の側面側から出射される。従って、発光装置１００としての配光特性（図４の点線参照）は光反射膜１０６を透過した光と、発光素子１０５の側面から出射した光の合成となる。 As shown in FIG. 1, the light emitting element 105 is flip-chip mounted on the conductor wiring 102 on the surface of the substrate 101 via the connecting member 103, and the surface facing the surface on which the electrodes are formed, that is, the translucent substrate. The main surface of is the light extraction surface. However, in the present embodiment, since the light reflecting film 106 is formed on the light extraction surface, the side surface of the light emitting element 105 becomes a substantial light extraction surface. That is, a part of the light emitted from the light emitting element 105 and directed toward the main surface side of the light emitting element 105 is returned to the inside of the light emitting element 105 by the light reflecting film 106, and is repeatedly reflected inside the light emitting element 105 to emit light. It is emitted from the side surface side of the element 105. Therefore, the light distribution characteristic of the light emitting device 100 (see the dotted line in FIG. 4) is a combination of the light transmitted through the light reflecting film 106 and the light emitted from the side surface of the light emitting element 105.

発光素子１０５は、正と負に絶縁分離された２つの導体配線１０２に跨るように配置されており、導電性の接続部材１０３によって電気的に接続され、機械的に固定されている。この発光素子１０５の実装方法は、半田ペーストを用いた実装方法の他、例えばバンプを用いた実装方法とすることができる。また、発光素子１０５としては発光素子が樹脂等で封止された小型のパッケージ品を用いることも可能であり、特に形状や構造を限定する物では無い。 The light emitting element 105 is arranged so as to straddle two conductor wirings 102 that are separated from each other by positive and negative insulation, and is electrically connected by a conductive connecting member 103 and mechanically fixed. As the mounting method of the light emitting element 105, in addition to the mounting method using solder paste, for example, a mounting method using bumps can be used. Further, as the light emitting element 105, it is possible to use a small packaged product in which the light emitting element is sealed with a resin or the like, and the shape and structure are not particularly limited.

後述するように、波長変換部材を備えた発光装置とする場合には、その波長変換部材１０９を効率良く励起できる短波長が発光可能な窒化物半導体（ＩｎｘＡｌｙＧａ１−ｘ−ｙＮ、０≦Ｘ、０≦Ｙ、Ｘ＋Ｙ≦１）が好適に挙げられる。 As will be described later, in the case of a light emitting device provided with a wavelength conversion member, a nitride semiconductor (In x Al y Ga 1-xy N) capable of emitting a short wavelength capable of efficiently exciting the wavelength conversion member 109. , 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) are preferably mentioned.

なお、フリップチップ実装の例で説明したが、発光素子の絶縁性基板側を実装面とし、発光素子の上面に形成された電極とワイヤとを接続する実装形態としてもよい。この場合は発光素子の上面は電極形成面側となり、反射膜は電極形成面側に設けられる。 Although described in the example of flip-chip mounting, the mounting form may be such that the insulating substrate side of the light emitting element is used as the mounting surface, and the electrode formed on the upper surface of the light emitting element and the wire are connected to each other. In this case, the upper surface of the light emitting element is on the electrode forming surface side, and the reflective film is provided on the electrode forming surface side.

（光反射膜１０６）
光反射膜１０６は発光素子１０５の主面である光取り出し面側に成膜される。
材料としては、金属や白色フィラー含有樹脂でも良く、少なくとも発光素子１０５が発光する光（第１の光）を反射する材料であれば特に材料は規定されない。
また、誘電体多層膜を用いることで、吸収の少ない反射膜を得ることが出来る。加えて、膜の設計で反射率を任意に調整出来、また、角度により反射率を制御することも可能となる。特に光取り出し面に垂直方向（光軸方向ともいう）の反射率を上げ、光軸に対して角度が大きくなるところで反射率を下げる、すなわち透過率を上げることでバットウイング配光の形状を制御することも可能となる。 (Light Reflective Film 106)
The light reflecting film 106 is formed on the light extraction surface side, which is the main surface of the light emitting element 105.
The material may be a metal or a resin containing a white filler, and at least the material is not specified as long as it is a material that reflects the light (first light) emitted by the light emitting element 105.
Further, by using the dielectric multilayer film, it is possible to obtain a reflective film having less absorption. In addition, the reflectance can be arbitrarily adjusted by designing the film, and the reflectance can be controlled by the angle. In particular, the shape of the bat wing light distribution is controlled by increasing the reflectance in the direction perpendicular to the light extraction surface (also called the optical axis direction) and decreasing the reflectance when the angle with respect to the optical axis increases, that is, increasing the transmittance. It is also possible to do.

特に誘電体多層膜の光軸での、すなわち発光素子の上面に対して垂直方向での反射波長帯域については、図３に示すように、発光素子１０５の発光ピーク波長に対して、長波長側の反射波長帯域を広くすることが有用である。
これは、光軸から角度を振っていくと、言い換えると、入射光の光軸からの角度が大きくなるにしたがって、誘電体多層膜の反射波長帯域が短波長側にシフトするためであり、発光波長に対して長波長側の反射波長帯域を広くすることでより広角側まで、すなわち、光軸に対して大きな角度で入射する光に対しても反射率を維持することが可能になる。
誘電体多層膜の材料としては金属酸化膜材料や金属窒化膜または酸窒化膜等を用いることが出来る。また、シリコーン樹脂やフッ素樹脂等の有機材を使用する事もでき、特に材料を規定する物では無い。 In particular, the reflection wavelength band on the optical axis of the dielectric multilayer film, that is, in the direction perpendicular to the upper surface of the light emitting element, is on the long wavelength side with respect to the emission peak wavelength of the light emitting element 105, as shown in FIG. It is useful to widen the reflection wavelength band of.
This is because the reflection wavelength band of the dielectric multilayer film shifts to the shorter wavelength side as the angle from the optical axis of the incident light increases, in other words, when the angle is changed from the optical axis. By widening the reflection wavelength band on the long wavelength side with respect to the wavelength, it is possible to maintain the reflectance even for light incident on the wider angle side, that is, at a large angle with respect to the optical axis.
As the material of the dielectric multilayer film, a metal oxide film material, a metal nitride film, an oxynitride film, or the like can be used. Further, an organic material such as a silicone resin or a fluororesin can be used, and the material is not particularly specified.

（封止部材１０８）
封止部材１０８の材料としては、エポキシ樹脂やシリコーン樹脂あるいはそれらを混合させた樹脂や、ガラスなどの透光性材料を用いることができる。これらのうち、耐光性および成形のしやすさを考慮して、シリコーン樹脂を選択することが好ましい。 (Sealing member 108)
As the material of the sealing member 108, an epoxy resin, a silicone resin, a resin in which they are mixed, or a translucent material such as glass can be used. Of these, it is preferable to select a silicone resin in consideration of light resistance and ease of molding.

なお封止部材１０８には、光拡散材に加え、発光素子１０５からの光を一部吸収して発光素子からの発光波長とは異なる波長の光を発する蛍光体や量子ドット等の波長変換部材や、発光素子の発光色に対応させて、着色剤を含有させることもできる。
封止部材１０８にこれらの部材を含有させる場合、配光特性になるべく影響の与えないものを用いることが好ましい。たとえば、含有させる部材の粒径が０．２μｍ以下のものであれば、配光特性に与える影響が少ないため好ましい。なお、本明細書中において粒径とは平均粒径のことをいうものとし、平均粒径の値は、空気透過法を利用したＦ．Ｓ．Ｓ．Ｓ．Ｎｏ（Ｆｉｓｈｅｒ−ＳｕｂＳｉｅｖｅ−Ｓｉｚｅｒｓ−Ｎｏ．）によるものとする。 In addition to the light diffusing material, the sealing member 108 is a wavelength conversion member such as a phosphor or a quantum dot that partially absorbs the light from the light emitting element 105 and emits light having a wavelength different from the emission wavelength from the light emitting element. Alternatively, a colorant may be contained in accordance with the emission color of the light emitting element.
When these members are contained in the sealing member 108, it is preferable to use one that does not affect the light distribution characteristics as much as possible. For example, when the particle size of the member to be contained is 0.2 μm or less, it is preferable because it has little influence on the light distribution characteristics. In the present specification, the particle size means the average particle size, and the value of the average particle size is determined by F.I. S. S. S. No. (Fisher-SubSieve-Sizers-No.).

封止部材１０８は、発光素子１０５を被覆するように圧縮成型や射出成型によって形成することができる。その他、封止部材１０８の材料の粘度を最適化して、発光素子１０５の上に滴下もしくは描画して、材料自体の表面張力によって、形状を制御することも可能である。 The sealing member 108 can be formed by compression molding or injection molding so as to cover the light emitting element 105. In addition, it is also possible to optimize the viscosity of the material of the sealing member 108, drop or draw it on the light emitting element 105, and control the shape by the surface tension of the material itself.

後者の形成方法による場合には、金型を必要とすることなく、より簡便な方法で封止部材を形成することができる。また、このような形成方法による封止部材の材料の粘度を調整する手段として、その材料本来の粘度の他、上述したような光拡散材、波長変換部材、着色剤を利用して所望の粘度に調整することもできる。 In the case of the latter forming method, the sealing member can be formed by a simpler method without requiring a mold. Further, as a means for adjusting the viscosity of the material of the sealing member by such a forming method, in addition to the original viscosity of the material, a desired viscosity is obtained by using a light diffusing material, a wavelength conversion member, and a colorant as described above. It can also be adjusted to.

［第２実施形態］
図７は、第２実施形態の発光装置２００を含む発光モジュール３００の断面図である。
本実施形態では、発光素子１０５が複数個、所定の間隔を開けて基体１０１に実装されており、その発光素子１０５間に、発光素子の上面（基体１０１の上面）に対して小さい角度で出射される光を反射させる光反射部材１１０を配置している。すなわち、発光装置２００は、実施形態１の発光装置１００を複数備え、各発光装置１００の間に光反射部材１１０が配置された集積型発光装置である。また、発光装置１００及び光反射部材１１０の上方には、発光素子の上面と略平行になるように発光素子１０５からの光を拡散するための光拡散板１１１が配置されており、さらにその上に光拡散板１１１と略平行に発光素子１０５から発せられる光の一部を別の波長の光に変換する波長変換層１１２が配置されている。 [Second Embodiment]
FIG. 7 is a cross-sectional view of a light emitting module 300 including the light emitting device 200 of the second embodiment.
In the present embodiment, a plurality of light emitting elements 105 are mounted on the base 101 at predetermined intervals, and the light emitting elements 105 emit light at a small angle with respect to the upper surface of the light emitting element (upper surface of the base 101). A light reflecting member 110 that reflects the light to be generated is arranged. That is, the light emitting device 200 is an integrated light emitting device in which a plurality of light emitting devices 100 of the first embodiment are provided and a light reflecting member 110 is arranged between the light emitting devices 100. Further, above the light emitting device 100 and the light reflecting member 110, a light diffusing plate 111 for diffusing the light from the light emitting element 105 is arranged so as to be substantially parallel to the upper surface of the light emitting element, and further above the light diffusing plate 111. A wavelength conversion layer 112 that converts a part of the light emitted from the light emitting element 105 into light having a different wavelength is arranged substantially parallel to the light diffusing plate 111.

一般に、基体１０１と光拡散板１１１の距離（以後、光学距離：ＯＤともいう）／発光素子間隔（以後Ｐｉｔｃｈともいう）が小さくなるに従い、光拡散板１１１の面上で発光素子１０５間の光量が少なくなり暗部が発生する。
しかし、この様に光反射部材１１０を配置する構成とすることで、発光素子間の光量が光反射部材１１０による反射光で補われて、より小さなＯＤ／Ｐｉｔｃｈ領域でも光拡散板１１１の面上での輝度ムラが小さくなる。
具体的には、第２実施形態の発光装置２００において、光反射部材１１０の光反射面の基体１０１に対する傾斜角度θは、各発光装置１００の配光特性を考慮して光拡散板１１１の面上での輝度ムラが小さくなるように設定する。また、複数配置される発光装置１００の配光特性について言えば、光拡散板１１１の面上における輝度むらを抑えかつ薄型の発光装置２００を実現するためには、発光装置１００は、配光角が大きい領域、すなわち、配光角が±９０°に近いところでの光量が大きくなるような配光特性を有していることが好ましい。 Generally, as the distance between the substrate 101 and the light diffusing plate 111 (hereinafter, also referred to as optical distance: OD) / distance between light emitting elements (hereinafter, also referred to as Pitch) becomes smaller, the amount of light between the light emitting elements 105 on the surface of the light diffusing plate 111. Is reduced and dark areas are generated.
However, by arranging the light reflecting member 110 in this way, the amount of light between the light emitting elements is supplemented by the reflected light by the light reflecting member 110, and even in a smaller OD / Pitch region, the light diffusing plate 111 is on the surface. Brightness unevenness is reduced.
Specifically, in the light emitting device 200 of the second embodiment, the inclination angle θ of the light reflecting surface of the light reflecting member 110 with respect to the substrate 101 is the surface of the light diffusing plate 111 in consideration of the light distribution characteristics of each light emitting device 100. Set so that the uneven brightness above is small. Regarding the light distribution characteristics of the plurality of light emitting devices 100, the light emitting device 100 has a light distribution angle in order to suppress the uneven brightness on the surface of the light diffuser plate 111 and to realize the thin light emitting device 200. It is preferable to have a light distribution characteristic such that the amount of light is large in a region where the light intensity is large, that is, in a region where the light distribution angle is close to ± 90 °.

例えば、ＯＤ／Ｐｉｔｃｈが０．２以下と小さくなると、発光素子１０５の発光面を基準にしたときの、光反射部材１１０へ入射する光は仰角で２２゜未満となる。従って低ＯＤ／Ｐｉｔｃｈが０．２以下の場合、光反射部材１１０による光の反射効率を上げるためには、発光装置１００の配光特性は、たとえば、基体の上面に対して仰角２０゜未満の光量が多くなっていることが好ましい。具体的には、発光強度の第１及び第２ピークが仰角２０゜未満の範囲に位置することが好ましい。ここで、仰角２０°とは、図４の配光角の２０°及び１６０°に該当する。すなわち、図４に示すように、発光強度の第１ピークが配光角２０゜未満の範囲かつ第２ピークが配光角１６０°より大きい範囲に位置することが好ましい。また、仰角２０゜未満の光量が全体の光量の３０％以上であることが好ましく、より好ましくは４０％以上である。 For example, when the OD / Pitch becomes as small as 0.2 or less, the light incident on the light reflecting member 110 with reference to the light emitting surface of the light emitting element 105 becomes less than 22 ° in elevation angle. Therefore, when the low OD / Pitch is 0.2 or less, in order to increase the light reflection efficiency by the light reflecting member 110, the light distribution characteristic of the light emitting device 100 is, for example, an elevation angle of less than 20 ° with respect to the upper surface of the substrate. It is preferable that the amount of light is large. Specifically, it is preferable that the first and second peaks of the emission intensity are located in the range where the elevation angle is less than 20 °. Here, the elevation angle of 20 ° corresponds to the light distribution angles of 20 ° and 160 ° in FIG. That is, as shown in FIG. 4, it is preferable that the first peak of the light emission intensity is located in the range where the light distribution angle is less than 20 ° and the second peak is located in the range where the light distribution angle is larger than 160 °. Further, the amount of light having an elevation angle of less than 20 ° is preferably 30% or more, more preferably 40% or more of the total amount of light.

（光反射部材１１０）
光反射部材１１０は複数の発光素子１０５の間に設置される。
材料としては、少なくとも発光素子１０５の発光波長を反射する材料であれば特に材料は限定されない。たとえば金属板や白色フィラー含有樹脂を好適に用いることができる。
また、光反射部材の反射面として誘電体多層膜を用いることで、吸収の少ない反射面を得ることも出来る。加えて、膜の設計で反射率を任意に調整出来、また、角度により反射率を制御することも可能となる。 (Light Reflecting Member 110)
The light reflecting member 110 is installed between the plurality of light emitting elements 105.
The material is not particularly limited as long as it reflects at least the emission wavelength of the light emitting element 105. For example, a metal plate or a resin containing a white filler can be preferably used.
Further, by using a dielectric multilayer film as the reflecting surface of the light reflecting member, it is possible to obtain a reflecting surface having less absorption. In addition, the reflectance can be arbitrarily adjusted by designing the film, and the reflectance can be controlled by the angle.

光反射部材１１０の高さおよび基体１０１の表面に対する光反射面の傾斜角度θについては、任意の値を取ることが可能であり、またその反射面は平面であっても曲面であってもよく、所望の配光特性が得られるように最適な傾斜角度θ及び反射面の形状とすることが可能である。光反射部材１１０の高さは、発光素子間の距離の０．３倍以下、より好ましくは０．２倍以下である事が好ましく、これにより薄型でかつ輝度むらが低減された発光モジュール３００を提供することができる。 Any value can be taken for the height of the light reflecting member 110 and the inclination angle θ of the light reflecting surface with respect to the surface of the substrate 101, and the reflecting surface may be a flat surface or a curved surface. The optimum tilt angle θ and the shape of the reflecting surface can be obtained so that the desired light distribution characteristics can be obtained. The height of the light reflecting member 110 is preferably 0.3 times or less, more preferably 0.2 times or less the distance between the light emitting elements, whereby the light emitting module 300 which is thin and has reduced brightness unevenness is provided. Can be provided.

使用温度が大きく変わるような環境で使用される発光装置２００では、光反射部材１１０と基体１０１との線膨張係数を近づける必要がある。この光反射部材１１０と基体１０１間の線膨張係数が大きく違うと、温度変化により発光装置２００に反りが発生したり、構成部材間、特に発光装置１００と光反射部材１１０間の位置関係がずれたりして所望の光学特性が得られなくなるためである。しかし線膨張係数は物性値ゆえ選択肢が多くないのが実情である。そこで線膨張係数が大きく異なっていても発光装置２００が反らない様に、弾性変形が可能なフィルム成形品で光反射部材１１０を形成するのが好ましい。弾性変形の小さい材料（無垢材）で光反射部材１１０を構成すると形状を保持したまま膨張するが、フィルムであれば適度なところで変形して膨張分を吸収することが可能であるからである。 In the light emitting device 200 used in an environment where the operating temperature changes significantly, it is necessary to bring the linear expansion coefficients of the light reflecting member 110 and the substrate 101 close to each other. If the coefficient of linear expansion between the light reflecting member 110 and the substrate 101 is significantly different, the light emitting device 200 may be warped due to a temperature change, or the positional relationship between the constituent members, particularly between the light emitting device 100 and the light reflecting member 110, may be displaced. This is because the desired optical characteristics cannot be obtained. However, since the coefficient of linear expansion is a physical property value, there are not many choices in reality. Therefore, it is preferable to form the light reflecting member 110 with a film-molded product capable of elastic deformation so that the light emitting device 200 does not warp even if the coefficient of linear expansion is significantly different. This is because if the light reflecting member 110 is made of a material (solid material) having a small elastic deformation, it expands while maintaining its shape, but if it is a film, it can be deformed at an appropriate place to absorb the expanded portion.

また、光反射部材１１０は、複数の光反射部材１１０が複数連結されて板状とされており、発光装置２００が配置される貫通孔１１３を有することが好ましい。このような板状の光反射板１１０’を図８に示す。図８（ａ）は上面図であり、図８（ｂ）は図８（ａ）のＡ−Ａ断面図である。このような光反射板１１０’は金型成形、真空成形、圧空成形、プレス成形等で形成することができる。この光反射板１１０’を基体１０１の上に配置する。また、光反射部材１１０は、基体１０１上に直接光反射性樹脂を描画する等の方法で形成してもよい。光反射部材１１０の高さは、発光素子間の距離の０．３倍以下であることが好ましく、たとえば、発光素子間の距離の０．２倍以下であることがより好ましい。 Further, it is preferable that the light reflecting member 110 has a plate shape in which a plurality of light reflecting members 110 are connected to each other and has a through hole 113 in which the light emitting device 200 is arranged. Such a plate-shaped light reflector 110'is shown in FIG. 8 (a) is a top view, and FIG. 8 (b) is a cross-sectional view taken along the line AA of FIG. 8 (a). Such a light reflector 110'can be formed by mold molding, vacuum forming, pressure molding, press molding, or the like. The light reflector 110'is placed on the substrate 101. Further, the light reflecting member 110 may be formed by a method such as drawing a light reflecting resin directly on the substrate 101. The height of the light reflecting member 110 is preferably 0.3 times or less the distance between the light emitting elements, and more preferably 0.2 times or less the distance between the light emitting elements.

［実施例１］
本実施例は、図１に示すように、基体１０１としてガラスエポキシ基材を用い、導体配線として３５μｍのＣｕ材を用いる。
発光素子１０５として、平面視が１辺６００μｍの正方形で、厚みが１５０μｍの窒化物系青色ＬＥＤを用い、絶縁部材１０４にはエポキシ系の白色ソルダーレジストを用いる。
また発光素子１０５の主面に形成した光反射膜１０６はSiO2層（８２ｎｍ）とZrO２層（５４ｎｍ）の繰り返しで１１層構成とされている。
この時の光反射膜１０６の透過率は図２に示す様になり、発光素子の主面側垂直方向（光軸方向）は透過率が低く、光軸から角度がずれると透過率が上昇する。
発光素子１０５は封止部材１０８で被覆されている。封止部材１０８にはシリコーン樹脂を用い、高さ（Ｈ）１．０ｍｍ，胴径（Ｗ）３．０ｍｍとなっている。
この様な構成とすることで、発光素子１０５から出射した光は、封止部材１０８と空気界面で屈折し、より配光角が広がる。この時の発光装置１００の配光特性は図４の実線で示される。なお、封止部材１０８を形成しない場合の配光特性を、図４の点線で示す。このように、封止部材１０８を光反射膜１０６と共に用いることで、より低ＯＤ／Ｐｉｔｃｈの実現が可能となる。 [Example 1]
In this embodiment, as shown in FIG. 1, a glass epoxy base material is used as the base 101, and a 35 μm Cu material is used as the conductor wiring.
As the light emitting element 105, a nitride-based blue LED having a side view of 600 μm and a thickness of 150 μm is used, and an epoxy-based white solder resist is used for the insulating member 104.
The light reflecting film 106 formed on the main surface of the light emitting element 105 is composed of 11 layers by repeating a SiO 2 layer (82 nm) and a ZrO 2 layer (54 nm).
The transmittance of the light reflecting film 106 at this time is as shown in FIG. 2, the transmittance is low in the direction perpendicular to the main surface side (optical axis direction) of the light emitting element, and the transmittance increases when the angle deviates from the optical axis. ..
The light emitting element 105 is covered with a sealing member 108. Silicone resin is used for the sealing member 108, and the height (H) is 1.0 mm and the body diameter (W) is 3.0 mm.
With such a configuration, the light emitted from the light emitting element 105 is refracted at the air interface with the sealing member 108, and the light distribution angle is further widened. The light distribution characteristics of the light emitting device 100 at this time are shown by the solid line in FIG. The light distribution characteristics when the sealing member 108 is not formed are shown by the dotted lines in FIG. In this way, by using the sealing member 108 together with the light reflecting film 106, it is possible to realize a lower OD / Pitch.

［実施例２］
実施例２は実施例１の発光素子１０５を複数個、基体１０１に実装し、その間に光反射部材１１０を配置している。Ｐｉｔｃｈは１２．５ｍｍとする。
光反射部材１１０は板状の光反射板とされており、ＴｉＯ２フィラーを含有したポリプロピレン製シート（厚み（ｔ）は０．２ｍｍ）で、反射角θ（仰角）が５５゜、高さが２．４ｍｍとなるように真空成形法を用いて成形する。光反射部材１１０は、図８に示すような板状の光反射板であり、絶縁部材１０４の上に配置されている。
その上に乳白色の光拡散板１１１と波長変換層１１２を配置して液晶バックライト（発光モジュール）とする。この様な構成に於いて、光反射部材１１０の有無を光拡散板１１１の面上における輝度ムラで比較した結果を図９に示す。図９Ａは光反射部材を配置しないものであり、図９Ｂは光反射部材を配置したものである。図９に示すように、光反射部材を配置しないものは相対輝度が高くなる領域（２５０pixel〜７２０pixel）において相対輝度が０．６〜０．７程度に下がる点があるのに対し、光反射部材を配置した場合は、相対輝度が高くなる領域（２５０pixel〜７２０pixel）において相対輝度が０．８を下回らないことがわかる。つまり、光反射部材を配置することにより、輝度ムラ改善の効果が確認出来る。 [Example 2]
In the second embodiment, a plurality of light emitting elements 105 of the first embodiment are mounted on the substrate 101, and the light reflecting member 110 is arranged between them. The Pitch is 12.5 mm.
The light reflecting member 110 is a plate-shaped light reflecting plate, which is a polypropylene sheet containing a TiO 2 filler (thickness (t) is 0.2 mm), has a reflection angle θ (elevation angle) of 55 °, and has a height of 55 °. Mold using the vacuum forming method so as to be 2.4 mm. The light reflecting member 110 is a plate-shaped light reflecting plate as shown in FIG. 8, and is arranged on the insulating member 104.
A milky white light diffusing plate 111 and a wavelength conversion layer 112 are arranged on the milk white light diffusing plate 111 to form a liquid crystal backlight (light emitting module). FIG. 9 shows a result of comparing the presence / absence of the light reflecting member 110 with the brightness unevenness on the surface of the light diffusing plate 111 in such a configuration. FIG. 9A shows the light reflecting member not arranged, and FIG. 9B shows the light reflecting member arranged. As shown in FIG. 9, in the case where the light reflecting member is not arranged, the relative brightness is lowered to about 0.6 to 0.7 in the region where the relative brightness is high (250 pixels to 720 pixels), whereas the light reflecting member is When is arranged, it can be seen that the relative brightness does not fall below 0.8 in the region where the relative brightness is high (250 pixels to 720 pixels). That is, by arranging the light reflecting member, the effect of improving the brightness unevenness can be confirmed.

本発明の発光装置および発光モジュールは、液晶ディスプレイのバックライト光源、各種照明器具などに利用することができる。 The light emitting device and the light emitting module of the present invention can be used as a backlight source for a liquid crystal display, various lighting fixtures, and the like.

１００、２００ 発光装置
３００ 発光モジュール
１０１ 基体
１０２ 導体配線
１０３ 接続部材
１０４ 絶縁部材
１０５ 発光素子
１０６ 光反射膜
１０８ 封止部材
１１０ 光反射部材
１１０’光反射板
１１１ 光拡散板
１１２ 波長変換層
１１３ 貫通孔 100, 200 Light emitting device 300 Light emitting module 101 Base 102 Conductor wiring 103 Connecting member 104 Insulating member 105 Light emitting element 106 Light reflecting film 108 Sealing member 110 Light reflecting member 110'Light reflecting plate 111 Light diffuser 112 Wavelength conversion layer 113 Through hole

Claims (15)

導体配線を有する基体と、
前記基体に実装され、第１の光を発光する発光素子と、
前記発光素子の上面に設けられた光反射膜と、
前記発光素子及び光反射膜を被覆する封止部材と、を有し、
前記封止部材の幅（Ｗ）に対する高さ（Ｈ）の比（Ｈ／Ｗ）が０．５より小さい発光装置。 A substrate with conductor wiring and
A light emitting element mounted on the substrate and emitting the first light,
A light reflecting film provided on the upper surface of the light emitting element and
It has a light emitting element and a sealing member that coats a light reflecting film.
A light emitting device in which the ratio (H / W) of the height (H) to the width (W) of the sealing member is less than 0.5. 前記封止部材の表面は凸状の曲面で形成されている、請求項１に記載の発光装置。 The light emitting device according to claim 1, wherein the surface of the sealing member is formed of a convex curved surface. 前記光反射膜の前記第１の光に対する光透過率は、入射角依存性を有する請求項１又は２に記載の発光装置。 The light emitting device according to claim 1 or 2, wherein the light transmittance of the light reflecting film with respect to the first light has an incident angle dependence. 前記光反射膜の前記第１の光に対する光透過率は、入射角の絶対値が大きくなるにしたがって高くなる請求項１〜３のいずれか１項に記載の発光装置。 The light emitting device according to any one of claims 1 to 3, wherein the light transmittance of the light reflecting film with respect to the first light increases as the absolute value of the incident angle increases. 前記光反射膜が、誘電体多層膜で形成されている請求項１〜４のいずれか１項に記載の発光装置。 The light emitting device according to any one of claims 1 to 4, wherein the light reflecting film is formed of a dielectric multilayer film. 前記光反射膜の垂直入射される光に対する反射波長帯域は、前記発光素子の発光ピーク波長を含み、かつ前記発光ピーク波長より長波長側が短波長側より広くなっている請求項１〜５のいずれか１項に記載の発光装置。 Any of claims 1 to 5, wherein the reflection wavelength band of the light reflecting film with respect to the vertically incident light includes the emission peak wavelength of the light emitting element, and the long wavelength side of the emission peak wavelength is wider than the short wavelength side. The light emitting device according to item 1. 前記発光装置が出射する光の全光量の３０％以上が、前記基体の上面に対して仰角２０゜未満の方向に出射される請求項１〜６のいずれか１項に記載の発光装置。 The light emitting device according to any one of claims 1 to 6, wherein 30% or more of the total amount of light emitted by the light emitting device is emitted in a direction of an elevation angle of less than 20 ° with respect to the upper surface of the substrate. 前記発光装置が出射する光の全光量の４０％以上が、前記基体の上面に対して仰角２０゜未満の方向に出射される請求項１〜６のいずれか１項に記載の発光装置。 The light emitting device according to any one of claims 1 to 6, wherein 40% or more of the total amount of light emitted by the light emitting device is emitted in a direction of an elevation angle of less than 20 ° with respect to the upper surface of the substrate. 前記封止部材の幅（Ｗ）に対する高さ（Ｈ）の比（Ｈ／Ｗ）が０．３以下である請求項１〜８のいずれか１項に記載の発光装置。 The light emitting device according to any one of claims 1 to 8, wherein the ratio (H / W) of the height (H) to the width (W) of the sealing member is 0.3 or less. 前記発光素子はフリップチップ実装されている、請求項１〜９のいずれか１項に記載の発光装置。 The light emitting device according to any one of claims 1 to 9, wherein the light emitting element is mounted on a flip chip. 請求項１〜１０のいずれか１項に記載の発光装置素子を複数備え、前記発光装置間にそれぞれ光反射部材が配置されている集積型発光装置。 An integrated light emitting device including a plurality of light emitting device elements according to any one of claims 1 to 10, and light reflecting members are arranged between the light emitting devices. 前記光反射部材の高さが、前記発光装置間の距離の０．３倍以下である請求項１１に記載の集積型発光装置。 The integrated light emitting device according to claim 11, wherein the height of the light reflecting member is 0.3 times or less the distance between the light emitting devices. 前記光反射部材の高さが、前記発光装置間の距離の０．２倍以下である請求項１１に記載の集積型発光装置。 The integrated light emitting device according to claim 11, wherein the height of the light reflecting member is 0.2 times or less the distance between the light emitting devices. 請求項１〜１０のいずれか１項に記載の発光装置と、前記発光装置の光取り出し面側に、前記発光素子の光を一部吸収して、前記発光素子の発光波長と異なる波長の光に変換する波長変換部材を備える発光モジュール。 A light emitting device according to any one of claims 1 to 10 and a light having a wavelength different from the light emitting wavelength of the light emitting element by partially absorbing the light of the light emitting element on the light extraction surface side of the light emitting device. A light emitting module including a wavelength conversion member that converts to. 請求項１０〜１３のいずれか１項に記載の集積型発光装置と、前記集積型発光装置の光取り出し面側に、前記発光素子の光を一部吸収して、前記発光素子の発光波長と異なる波長の光に変換する波長変換部材を備える発光モジュール。 The integrated light emitting device according to any one of claims 10 to 13 and the light emitting wavelength of the light emitting element by partially absorbing the light of the light emitting element on the light extraction surface side of the integrated light emitting device. A light emitting module including a wavelength conversion member that converts light of different wavelengths.
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