AU2002217845A1 - Microelectronic package having improved light extraction - Google Patents

Microelectronic package having improved light extraction

Info

Publication number
AU2002217845A1
AU2002217845A1 AU2002217845A AU1784502A AU2002217845A1 AU 2002217845 A1 AU2002217845 A1 AU 2002217845A1 AU 2002217845 A AU2002217845 A AU 2002217845A AU 1784502 A AU1784502 A AU 1784502A AU 2002217845 A1 AU2002217845 A1 AU 2002217845A1
Authority
AU
Australia
Prior art keywords
light extraction
microelectronic package
improved light
microelectronic
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002217845A
Inventor
Ivan Eliashevich
Robert F. Karlicek Jr.
Hari Venugopalan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Emcore Corp
Original Assignee
Emcore Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Corp filed Critical Emcore Corp
Publication of AU2002217845A1 publication Critical patent/AU2002217845A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
AU2002217845A 2000-11-16 2001-11-14 Microelectronic package having improved light extraction Abandoned AU2002217845A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24931100P 2000-11-16 2000-11-16
US60249311 2000-11-16
PCT/US2001/044047 WO2002041406A1 (en) 2000-11-16 2001-11-14 Microelectronic package having improved light extraction

Publications (1)

Publication Number Publication Date
AU2002217845A1 true AU2002217845A1 (en) 2002-05-27

Family

ID=22942928

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002217845A Abandoned AU2002217845A1 (en) 2000-11-16 2001-11-14 Microelectronic package having improved light extraction

Country Status (3)

Country Link
US (1) US7023022B2 (en)
AU (1) AU2002217845A1 (en)
WO (1) WO2002041406A1 (en)

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US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7193784B2 (en) * 2003-05-20 2007-03-20 Kansas State University Research Foundation Nitride microlens
CN100383639C (en) * 2003-09-06 2008-04-23 鸿富锦精密工业（深圳）有限公司 Back-to-light module
US7341880B2 (en) 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
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CN100383637C (en) * 2003-09-26 2008-04-23 鸿富锦精密工业（深圳）有限公司 LED Light Source and backlight modular
CN100461561C (en) * 2004-01-07 2009-02-11 浜松光子学株式会社 Semiconductor light-emitting device and its manufacturing method
JP4116587B2 (en) 2004-04-13 2008-07-09 浜松ホトニクス株式会社 Semiconductor light emitting device and manufacturing method thereof
JP4397728B2 (en) * 2004-04-21 2010-01-13 日東電工株式会社 Direct type backlight
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
JP2006100787A (en) 2004-08-31 2006-04-13 Toyoda Gosei Co Ltd Light emitting device and light emitting element
GB2417825B (en) * 2004-09-04 2006-11-22 Arima Optoelectronics Corp Light emitting diode with diffraction lattice
US7459345B2 (en) * 2004-10-20 2008-12-02 Mutual-Pak Technology Co., Ltd. Packaging method for an electronic element
EP1861876A1 (en) * 2005-03-24 2007-12-05 Tir Systems Ltd. Solid-state lighting device package
WO2006105638A1 (en) * 2005-04-05 2006-10-12 Tir Systems Ltd. Electronic device package with an integrated evaporator
JP2006324324A (en) * 2005-05-17 2006-11-30 Sumitomo Electric Ind Ltd Light emitting device, method of manufacturing same, and semiconductor substrate
TWI371871B (en) 2006-12-29 2012-09-01 Ind Tech Res Inst A led chip with micro lens
US7388233B2 (en) 2005-10-17 2008-06-17 Luminus Devices, Inc. Patchwork patterned devices and related methods
US7391059B2 (en) 2005-10-17 2008-06-24 Luminus Devices, Inc. Isotropic collimation devices and related methods
US7348603B2 (en) 2005-10-17 2008-03-25 Luminus Devices, Inc. Anisotropic collimation devices and related methods
US7375379B2 (en) * 2005-12-19 2008-05-20 Philips Limileds Lighting Company, Llc Light-emitting device
US7682850B2 (en) * 2006-03-17 2010-03-23 Philips Lumileds Lighting Company, Llc White LED for backlight with phosphor plates
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
US7626210B2 (en) * 2006-06-09 2009-12-01 Philips Lumileds Lighting Company, Llc Low profile side emitting LED
US7906794B2 (en) 2006-07-05 2011-03-15 Koninklijke Philips Electronics N.V. Light emitting device package with frame and optically transmissive element
US20080121902A1 (en) * 2006-09-07 2008-05-29 Gelcore Llc Small footprint high power light emitting package with plurality of light emitting diode chips
KR101484488B1 (en) * 2006-10-31 2015-01-20 코닌클리케 필립스 엔.브이. Lighting device package
US8110838B2 (en) 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
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US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
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CN102130285B (en) * 2010-11-03 2012-12-26 映瑞光电科技(上海)有限公司 Light emitting diode and manufacturing method thereof
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Also Published As

Publication number Publication date
US7023022B2 (en) 2006-04-04
US20040065886A1 (en) 2004-04-08
WO2002041406A1 (en) 2002-05-23

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