JP2021132111A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP2021132111A JP2021132111A JP2020026416A JP2020026416A JP2021132111A JP 2021132111 A JP2021132111 A JP 2021132111A JP 2020026416 A JP2020026416 A JP 2020026416A JP 2020026416 A JP2020026416 A JP 2020026416A JP 2021132111 A JP2021132111 A JP 2021132111A
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- JP
- Japan
- Prior art keywords
- signal
- power element
- pad
- signal pad
- semiconductor module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000011347 resin Substances 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 230000036413 temperature sense Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 21
- 229910000679 solder Inorganic materials 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- 230000007423 decrease Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Abstract
Description
第1実施形態について説明する。本実施形態の半導体モジュールは、例えば自動車などの車両に搭載され、車両用の各種電子装置における電力変換装置等に適用されるものである。
第2実施形態について説明する。本実施形態は、第1実施形態に対してパワー素子10から信号を取り出すための配線を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
第3実施形態について説明する。本実施形態は、第1実施形態に対して信号パッド12とヒートシンク20とを熱的に接続する方法を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
第4実施形態について説明する。本実施形態は、第1実施形態に対して信号パッド12の幅を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
第5実施形態について説明する。本実施形態は、第4実施形態に対して信号配線70の幅を変更したものであり、その他については第4実施形態と同様であるため、第4実施形態と異なる部分についてのみ説明する。
なお、本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。また、上記各実施形態は、互いに無関係なものではなく、組み合わせが明らかに不可な場合を除き、適宜組み合わせが可能である。また、上記各実施形態において、実施形態を構成する要素は、特に必須であると明示した場合および原理的に明らかに必須であると考えられる場合等を除き、必ずしも必須のものではないことは言うまでもない。また、上記各実施形態において、実施形態の構成要素の個数、数値、量、範囲等の数値が言及されている場合、特に必須であると明示した場合および原理的に明らかに特定の数に限定される場合等を除き、その特定の数に限定されるものではない。また、上記各実施形態において、構成要素等の形状、位置関係等に言及するときは、特に明示した場合および原理的に特定の形状、位置関係等に限定される場合等を除き、その形状、位置関係等に限定されるものではない。
12 信号パッド
13 アクティブエリア
20 ヒートシンク
70 信号配線
Claims (11)
- パワー素子(10)と、
前記パワー素子の信号パッド(12)に接続された信号配線(70)と、
前記パワー素子を冷却するためのヒートシンク(20)と、を備える半導体モジュールであって、
前記パワー素子は、前記信号パッドが形成された部分がアクティブエリア(13)とされており、
前記信号パッドは、前記信号配線を介して前記ヒートシンクと熱的に接続されている半導体モジュール。 - 前記ヒートシンクは、2つの金属層(21、23)と、前記2つの金属層に挟まれた絶縁層(22)と、を備える金属絶縁基板によって構成されており、
前記信号配線は、前記絶縁層に積層されている請求項1に記載の半導体モジュール。 - 前記信号配線は、前記絶縁層の外側まで延設されている請求項2に記載の半導体モジュール。
- 前記信号配線と、前記ヒートシンクとが、熱伝導率が2W/m2K以上で厚さが0.3mm以下の樹脂層(41)によって、熱的に接続されている請求項1に記載の半導体モジュール。
- 前記信号パッドの幅は、該信号パッドに接続された前記信号配線の幅よりも大きくされている請求項1ないし4のいずれか1つに記載の半導体モジュール。
- 前記パワー素子に複数の前記信号パッドが形成されており、
複数の前記信号パッドのうち、前記パワー素子の中央部に近い信号パッドの幅は、該信号パッドよりも前記パワー素子の中央部から遠い信号パッドの幅に比べて大きくされている請求項1ないし5のいずれか1つに記載の半導体モジュール。 - 前記信号配線を複数備え、
複数の前記信号配線のうち、前記パワー素子の中央部に近い信号配線の幅は、該信号配線よりも前記パワー素子の中央部から遠い信号配線の幅に比べて大きくされている請求項1ないし6のいずれか1つに記載の半導体モジュール。 - 前記パワー素子の温度を検出するための温度センスダイオード(14)を備え、
前記温度センスダイオードは、前記パワー素子のソースパッド(11)と前記信号パッドの間に配置されている請求項1ないし7のいずれか1つに記載の半導体モジュール。 - 前記アクティブエリアは、前記信号パッドが形成された領域では、他の領域に比べてアクティブセルの密度が低くされている請求項1ないし8のいずれか1つに記載の半導体モジュール。
- 前記信号パッドが形成された領域の前記アクティブエリアでは、アクティブセルの密度が、他の領域の70%以上90%以下とされている請求項9に記載の半導体モジュール。
- 前記パワー素子は、化合物半導体で構成されている請求項1ないし10のいずれか1つに記載の半導体モジュール。
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