JP2021125617A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2021125617A JP2021125617A JP2020019373A JP2020019373A JP2021125617A JP 2021125617 A JP2021125617 A JP 2021125617A JP 2020019373 A JP2020019373 A JP 2020019373A JP 2020019373 A JP2020019373 A JP 2020019373A JP 2021125617 A JP2021125617 A JP 2021125617A
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- 239000002184 metal Substances 0.000 claims description 38
- 238000007747 plating Methods 0.000 claims description 9
- 230000008646 thermal stress Effects 0.000 abstract description 9
- 230000000593 degrading effect Effects 0.000 abstract 1
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- 229910000679 solder Inorganic materials 0.000 description 10
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 230000002093 peripheral effect Effects 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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Abstract
【解決手段】複数の回路パターン12における絶縁板11の外縁部に対面する外縁角部R1〜R50において、絶縁板11の角部に対応する外縁角部R1,R20,R25,R44の曲率の方が、絶縁板11の角部に対応していない外縁角部R2〜R19,R21〜R24,R26〜R43,R45〜R50の曲率よりも小さい。このため、絶縁板11の外縁部に対して発生する熱応力を緩和することができる。特に、絶縁板11の外縁部において、角部に対して発生するより大きな熱応力を緩和することができる。したがって、絶縁回路基板10の損傷の発生を抑制することができ、半導体装置50の信頼性の低下を防止することができる。
【選択図】図2
Description
第1実施の形態の半導体装置について図1〜図3を用いて説明する。図1は、第1の実施の形態の半導体装置の側断面図であり、図2は、第1の実施の形態の半導体装置に含まれる絶縁回路基板の平面図(おもて面)である。なお、図2では、封止部材及びケースの図示を省略している。図3は、第1の実施の形態の半導体装置に含まれる絶縁回路基板の平面図(裏面)である。なお、図3は、図2に示す絶縁回路基板10の裏面の平面図である。おもて面側の回路パターン12についてはその位置を破線で示している。また、第1の実施の形態では、複数の回路パターン12、複数の半導体チップ20,21、複数のコンタクト部品30、複数のボンディングワイヤ15、複数の外部接続端子40に対して、それぞれ区別しない場合には、同じ符号を付して説明する。なお、これら以外の構成部品についても、複数あるものはそれぞれ区別することなく、同じ符号を付して同じ符号で説明する。
第2の実施の形態では、第1の実施の形態の絶縁回路基板10に含まれる回路パターン12の別の形態について図5を用いて説明する。なお、第2の実施の形態の半導体装置は、以下に説明する回路パターン12以外は、第1の実施の形態と同様の構成を有している。図5は、第2の実施の形態の半導体装置に含まれる絶縁回路基板の回路パターンの平面図である。図5に示す回路パターン12は、絶縁板11において外縁部に沿って設けられたものであって、コンタクト部品30が配置されるものに適用される。図5では、一例として、図2における外縁角部R33,R34を含む回路パターン12に関する3種類を示している。
11 絶縁板
12 回路パターン
13 金属板
13a ディンプル
14 溝部
15 ボンディングワイヤ
20,21 半導体チップ
22 電子部品
30 コンタクト部品
40 外部接続端子
41 ケース
42 封止部材
50 半導体装置
A1〜A4 コーナー領域
B1〜B4 サイド領域
R1〜R50 外縁角部
Claims (11)
- 絶縁板と前記絶縁板のおもて面に形成され、複数の回路パターンとを有する絶縁回路基板を有し、
前記複数の回路パターンにおける前記絶縁板の外縁部に対面する外縁角部において、前記絶縁板の角部に対応する前記外縁角部の曲率の方が、前記絶縁板の角部に対応していない前記外縁角部の曲率よりも小さい、
半導体装置。 - 前記複数の回路パターンは、平面視で矩形状の第1形成領域内にそれぞれ配置されている、
請求項1に記載の半導体装置。 - 前記複数の回路パターンにおける前記外縁角部を除いた内側角部の曲率は、前記外縁角部の曲率よりも大きい、
請求項2に記載の半導体装置。 - 前記絶縁回路基板は前記絶縁板の裏面に形成された金属板をさらに備え、
前記複数の回路パターンを全て合わせた体積は、前記金属板の体積よりも小さい、
請求項1に記載の半導体装置。 - 前記複数の回路パターンの表面はめっき膜によりめっき処理されている、
請求項1に記載の半導体装置。 - 半導体チップをさらに有し、
前記複数の回路パターンは、前記半導体チップが配置される、前記絶縁板の内側に配置された複数の第1回路パターンと前記外縁角部を含みつつ、前記複数の回路パターンの外縁部に配置された複数の第2回路パターンとを含んでいる、
請求項1に記載の半導体装置。 - 外部接続端子と、
前記複数の第2回路パターンに配置される、前記外部接続端子が圧入される円筒状のコンタクト部品と、
をさらに有し、
前記コンタクト部品が配置される前記複数の第2回路パターンの外縁角部は、前記コンタクト部品の曲率半径以上、コンタクト部品が配置された前記複数の第2回路パターンの幅の半分を半径とする曲率半径以下である、
請求項6に記載の半導体装置。 - 前記複数の第2回路パターンのそれぞれの面積は、前記複数の第1回路パターンのそれぞれの面積よりも小さいものを含む、
請求項7に記載の半導体装置。 - 前記絶縁回路基板は前記絶縁板の裏面に形成された金属板をさらに備え、
前記金属板の裏面であって、平面視で前記複数の第2回路パターンよりも外側にそれぞれ形成された複数の凹部をさらに備える、
請求項8に記載の半導体装置。 - 前記絶縁回路基板は前記絶縁板の裏面の第2形成領域に形成された金属板をさらに備え、
平面視で、前記第1形成領域は前記第2形成領域よりも内側に設けられている、
請求項2に記載の半導体装置。 - コンタクト部品と、
絶縁板と前記絶縁板のおもて面に形成され、前記絶縁板の外縁部側に設けられ、前記コンタクト部品が配置される第1回路パターンを含む複数の回路パターンとを含む絶縁回路基板とを有し、
前記第1回路パターンの外縁角部は、前記コンタクト部品の曲率半径以上、前記コンタクト部品が配置された前記第1回路パターンの幅の半分を半径とする曲率半径以下である、
半導体装置。
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