JP2021048436A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 239000003990 capacitor Substances 0.000 claims description 58
- 229910002601 GaN Inorganic materials 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000009499 grossing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
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- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
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- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
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- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
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- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs
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Abstract
Description
本実施形態の半導体装置は、第1電極と、第2電極と、第1制御電極と、を有するノーマリーオフトランジスタと、第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、第1制御電極に電気的に接続された第1端部と、第1電極に電気的に接続された第2端部と、を有し、第1容量成分を含む第1素子と、第1制御電極及び第1端部に電気的に接続された第3端部と、第4端部と、を有し、第2容量成分を含む第2素子と、を備え、ノーマリーオフトランジスタの閾値電圧をVth、ノーマリーオフトランジスタの最大ゲート定格電圧をVg_max、第4端部の電圧をVg_on、第1容量成分をCa、第2容量成分をCbとしたときに、Vth<(Cb/(Ca+Cb))Vg_on<Vg_maxである。
本実施形態の半導体装置においては、第1素子1は、第1アノード51と、第1カソード52と、を有し、第1接合容量Cxを含む第1ツェナーダイオード50である。第1端部2は第1カソード52であり、第2端部3は第1アノード51であり、第1容量成分Caは第1接合容量Cxである。また、第2素子5は、第2アノード61と、第2カソード62と、を有し、第2接合容量Cyを含む第2ツェナーダイオード60であり、第3端部6は第2アノード61であり、第4端部7は第2カソード62であり、第2容量成分Cbは第2接合容量Cyである。
本実施形態の半導体装置は、第1コンデンサ30に対し第1ツェナーダイオード50が並列に接続されている点と、第2コンデンサ40に対し第2ツェナーダイオード60が並列に接続されている点で、第1実施形態と異なっている。
2 第1端部
3 第2端部
5 第2素子
6 第3端部
7 第4端部
10 ノーマリーオフトランジスタ
11 第1電極
12 第2電極
13 第1制御電極
20 ノーマリーオントランジスタ
21 第3電極
22 第4電極
23 第2制御電極
30 第1コンデンサ
31 第5端部
32 第6端部
40 第2コンデンサ
41 第7端部
42 第8端部
50 第1ツェナーダイオード
51 第1アノード
52 第1カソード
60 第2ツェナーダイオード
61 第2アノード
62 第2カソード
70 第3ダイオード
71 アノード
72 カソード
75 抵抗
76 端部
77 端部
80 第1ダイオード
81 アノード
82 カソード
85 第3コンデンサ
86 端部
87 端部
90 第2ダイオード
91 アノード
92 カソード
100 半導体装置
110 半導体装置
120 半導体装置
Claims (9)
- 第1電極と、第2電極と、第1制御電極と、を有するノーマリーオフトランジスタと、
前記第2電極に電気的に接続された第3電極と、第4電極と、第2制御電極と、を有するノーマリーオントランジスタと、
前記第1制御電極に電気的に接続された第1端部と、前記第1電極に電気的に接続された第2端部と、を有し、第1容量成分を含む第1素子と、
前記第1制御電極及び前記第1端部に電気的に接続された第3端部と、第4端部と、を有し、第2容量成分を含む第2素子と、
を備え、
前記ノーマリーオフトランジスタの閾値電圧をVth、前記ノーマリーオフトランジスタの最大ゲート定格電圧をVg_max、前記第4端部の電圧をVg_on、前記第1容量成分をCa、前記第2容量成分をCbとしたときに、
Vth<(Cb/(Ca+Cb))Vg_on<Vg_max
である半導体装置。 - 前記第1素子は、第1アノードと、第1カソードと、を有し、第1接合容量を含む第1ツェナーダイオードであり、
前記第1端部は前記第1カソードであり、前記第2端部は前記第1アノードであり、前記第1容量成分は前記第1接合容量である請求項1記載の半導体装置。 - 前記第1素子は、第5端部と、第6端部と、を有し、第1容量を含む第1コンデンサであり、
前記第1端部は前記第5端部であり、前記第2端部は前記第6端部であり、前記第1容量成分は前記第1容量である請求項1記載の半導体装置。 - 前記第1端部に電気的に接続された第1カソードと、前記第2端部に電気的に接続された第1アノードと、を有し前記第1コンデンサに並列に接続された第1ツェナーダイオードをさらに備える請求項3記載の半導体装置。
- 前記第1ツェナーダイオードの第1降伏電圧をVz(D1)としたときに、
Vz(D1)<Vg_max
である請求項2又は請求項4記載の半導体装置。 - 前記第2素子は、第2アノードと、第2カソードと、を有し、第2接合容量を含む第2ツェナーダイオードであり、
前記第3端部は前記第2アノードであり、前記第4端部は前記第2カソードであり、前記第2容量成分は前記第2接合容量である請求項1乃至請求項5いずれか一項記載の半導体装置。 - 前記第2素子は、第7端部と、第8端部と、を有し、第2容量を含む第2コンデンサであり、
前記第3端部は前記第7端部であり、前記第4端部は前記第8端部であり、前記第2容量成分は前記第2容量である請求項1乃至請求項5いずれか一項記載の半導体装置。 - 前記第3端部に電気的に接続された第2アノードと、前記第4端部に電気的に接続された第2カソードと、を有し前記第2コンデンサに並列に接続された第2ツェナーダイオードをさらに備える請求項7記載の半導体装置。
- 前記第2ツェナーダイオードの第2降伏電圧をVz(D2)としたときに、
Vz(D2)<Vg_on−Vth
である請求項6又は請求項8記載の半導体装置。
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JP2019168195A JP7337618B2 (ja) | 2019-09-17 | 2019-09-17 | 半導体装置 |
US16/745,457 US11264899B2 (en) | 2019-09-17 | 2020-01-17 | Semiconductor device |
CN202010057939.7A CN112532220A (zh) | 2019-09-17 | 2020-01-19 | 半导体装置 |
US17/578,882 US20220140731A1 (en) | 2019-09-17 | 2022-01-19 | Semiconductor device |
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JP2016139996A (ja) * | 2015-01-28 | 2016-08-04 | 株式会社東芝 | 半導体装置 |
CN106327468B (zh) | 2015-06-25 | 2019-02-15 | 株式会社理光 | 曲线检测方法和曲线检测装置 |
JP6356718B2 (ja) * | 2016-03-14 | 2018-07-11 | 株式会社東芝 | 半導体装置 |
JP6645924B2 (ja) * | 2016-07-12 | 2020-02-14 | 株式会社東芝 | 半導体装置及び電力変換装置 |
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JP6822907B2 (ja) * | 2017-06-26 | 2021-01-27 | 株式会社東芝 | 半導体装置、電力変換装置、駆動装置、車両、及び、昇降機 |
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2019
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2020
- 2020-01-17 US US16/745,457 patent/US11264899B2/en active Active
- 2020-01-19 CN CN202010057939.7A patent/CN112532220A/zh active Pending
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2022
- 2022-01-19 US US17/578,882 patent/US20220140731A1/en not_active Abandoned
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US20210083577A1 (en) | 2021-03-18 |
CN112532220A (zh) | 2021-03-19 |
JP7337618B2 (ja) | 2023-09-04 |
US11264899B2 (en) | 2022-03-01 |
US20220140731A1 (en) | 2022-05-05 |
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