JP2021048384A - 光放射の強度を均質化するための光学システム - Google Patents

光放射の強度を均質化するための光学システム Download PDF

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Publication number
JP2021048384A
JP2021048384A JP2020105332A JP2020105332A JP2021048384A JP 2021048384 A JP2021048384 A JP 2021048384A JP 2020105332 A JP2020105332 A JP 2020105332A JP 2020105332 A JP2020105332 A JP 2020105332A JP 2021048384 A JP2021048384 A JP 2021048384A
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Japan
Prior art keywords
light beam
optical system
partial light
cylindrical lens
partial
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Pending
Application number
JP2020105332A
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English (en)
Japanese (ja)
Inventor
ゲブルト ゼバスティアン
Geburt Sebastian
ゲブルト ゼバスティアン
ミュラー ラルフ
Ralf Mueller
ミュラー ラルフ
カーラート ハンス−ユルゲン
Kahlert Hans-Juergen
カーラート ハンス−ユルゲン
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Innovavent GmbH
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Innovavent GmbH
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Publication of JP2021048384A publication Critical patent/JP2021048384A/ja
Pending legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938Using specific optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B23/00Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938Using specific optical elements
    • G02B27/095Refractive optical elements
    • G02B27/0955Lenses
    • G02B27/0966Cylindrical lenses
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/106Beam splitting or combining systems for splitting or combining a plurality of identical beams or images, e.g. image replication
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/14Beam splitting or combining systems operating by reflection only
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00Simple or compound lenses
    • G02B3/02Simple or compound lenses with non-spherical faces
    • G02B3/06Simple or compound lenses with non-spherical faces with cylindrical or toric faces
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • G02B5/09Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678Beam shaping, e.g. using a mask

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Astronomy & Astrophysics (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
JP2020105332A 2019-07-10 2020-06-18 光放射の強度を均質化するための光学システム Pending JP2021048384A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102019118676.5 2019-07-10
DE102019118676.5A DE102019118676B4 (de) 2019-07-10 2019-07-10 Optisches System zur Homogenisierung der Intensität von Lichtstrahlung und Anlage zur Bearbeitung einer Halbleitermaterialschicht

Publications (1)

Publication Number Publication Date
JP2021048384A true JP2021048384A (ja) 2021-03-25

Family

ID=74058791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020105332A Pending JP2021048384A (ja) 2019-07-10 2020-06-18 光放射の強度を均質化するための光学システム

Country Status (4)

Country Link
JP (1) JP2021048384A (de)
KR (1) KR102512789B1 (de)
CN (1) CN112213862B (de)
DE (1) DE102019118676B4 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116184681A (zh) * 2023-04-27 2023-05-30 成都莱普科技股份有限公司 二氧化碳激光的光束整形设备以及光束整形方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3829728A1 (de) 1987-09-02 1989-03-23 Lambda Physik Forschung Verfahren und vorrichtung zum homogenisieren der intensitaetsverteilung im querschnit eines laserstrahls
DE4220705C2 (de) 1992-06-24 2003-03-13 Lambda Physik Ag Vorrichtung zum Aufteilen eines Lichtstrahles in homogene Teilstrahlen
JP4748836B2 (ja) * 1999-08-13 2011-08-17 株式会社半導体エネルギー研究所 レーザ照射装置
TW528879B (en) * 2001-02-22 2003-04-21 Ishikawajima Harima Heavy Ind Illumination optical system and laser processor having the same
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
DE10225674B4 (de) 2002-06-10 2013-03-28 Coherent Gmbh Linsensystem zum Homogenisieren von Laserstrahlung
DE10331442B4 (de) * 2003-07-10 2008-03-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Anordnung zur Transformation eines optischen Strahlungsfelds
WO2005085935A1 (de) * 2004-03-06 2005-09-15 Hentze-Lissotschenko Gmbh & Co. Kg Vorrichtung zur homogenisierung von licht sowie anordnung zur beleuchtung oder fokussierung mit einer derartigen vorrichtung
US7615722B2 (en) * 2006-07-17 2009-11-10 Coherent, Inc. Amorphous silicon crystallization using combined beams from optically pumped semiconductor lasers
DE102008033358B4 (de) * 2007-07-19 2014-04-03 Coherent Gmbh Vorrichtung und Verfahren zur Umverteilung des Strahlparameter-Produktes eines Laserstrahls
DE102007044298B3 (de) * 2007-09-17 2009-02-26 Coherent Gmbh Verfahren und Anordnung zum Erzeugen eines Laserstrahls mit einem linienhaften Strahlquerschnitt
DE112011100813T5 (de) * 2010-03-05 2012-12-27 TeraDiode, Inc. System und verfahren zur selektiven repositionier- und drehwellenlängenstrahlkombination
DE102012007601A1 (de) * 2012-04-16 2013-10-17 Innovavent Gmbh Optisches System für eine Anlage zur Bearbeitung von Dünnfilmschichten
CN104858544B (zh) * 2014-02-26 2018-09-21 恩耐公司 激光剥离方法及用于在目标上引起激光剥离的***
US10466494B2 (en) * 2015-12-18 2019-11-05 Nlight, Inc. Reverse interleaving for laser line generators
CN115121940A (zh) * 2016-07-27 2022-09-30 通快激光有限责任公司 激光线照射
DE102018200078B4 (de) * 2018-01-04 2020-07-02 Innovavent Gmbh Optisches System und Verfahren zum Erzeugen einer Beleuchtungslinie

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116184681A (zh) * 2023-04-27 2023-05-30 成都莱普科技股份有限公司 二氧化碳激光的光束整形设备以及光束整形方法
CN116184681B (zh) * 2023-04-27 2023-08-04 成都莱普科技股份有限公司 二氧化碳激光的光束整形设备以及光束整形方法

Also Published As

Publication number Publication date
DE102019118676B4 (de) 2021-10-21
CN112213862A (zh) 2021-01-12
CN112213862B (zh) 2022-10-14
KR102512789B1 (ko) 2023-03-21
KR20210007883A (ko) 2021-01-20
DE102019118676A1 (de) 2021-01-14

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