JP2020532867A - アルコキシシラ環式又はアシルオキシシラ環式化合物及びそれを使用してフィルムを堆積させるための方法 - Google Patents
アルコキシシラ環式又はアシルオキシシラ環式化合物及びそれを使用してフィルムを堆積させるための方法 Download PDFInfo
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- JP2020532867A JP2020532867A JP2020512505A JP2020512505A JP2020532867A JP 2020532867 A JP2020532867 A JP 2020532867A JP 2020512505 A JP2020512505 A JP 2020512505A JP 2020512505 A JP2020512505 A JP 2020512505A JP 2020532867 A JP2020532867 A JP 2020532867A
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- cyclic
- silacyclobutane
- silacyclopentane
- propoxy
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Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1896—Compounds having one or more Si-O-acyl linkages
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
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Abstract
Description
本出願は、35 U.S.C. 119(e)に基づいて2017年8月30日に出願された米国仮特許出願第62/552,040号の優先権を主張し、その全体を参照により本明細書に取り込む。
本明細書において、構造形成性前駆体としてアルコキシシラ環式又はアシルオキシシラ環式化合物を使用して誘電体膜を形成するための組成物及び方法を記載する。より具体的には、本明細書に記載されているのは、多孔質低誘電体膜(「低k」膜又は約3.2以下の誘電率を有する膜)を形成するための組成物及び方法であり、ここで、膜を堆積するために使用される方法は化学蒸着(CVD)法である。本明細書に記載の組成物及び方法によって製造される低誘電体膜は、例えば、エレクトロニクスデバイスの絶縁層として使用することができる。
本明細書に記載の方法及び組成物は上記の1つ以上の要求を満たす。本明細書に記載の方法及び組成物は、例えば、1,1−ジメトキシ−1−シラシクロペンタン(DMSCP)又は1,1−ジエトキシ−1−シラシクロペンタン(DESCP)などのアルコキシシラ環式又はアシルオキシシラ環式化合物を構造形成性前駆体として使用し、それは、ポロゲン前駆体と共堆積した後に、UV硬化してポロゲンを除去し、そして堆積したままの膜を硬化させた後に、多孔質低k誘電体膜を提供し、該低k誘電体膜は同じ誘電率のジエトキシメチルシラン(DEMS)などの従来技術の構造形成性前駆体を使用する膜と同様の機械的特性を有する。さらに、構造形成性前駆体として本明細書に記載されているアルコキシシラ環式又はアシルオキシシラ環式化合物を使用して堆積された膜は、比較的高い量の炭素を含む。さらに、本明細書に記載のアルコキシシラ環式又はアシルオキシシラ環式化合物は、他の先行技術の構造形成性前駆体、例えば、架橋前駆体(例えば、メチレン又はエチレン架橋ジシラン又はジシロキサン前駆体)と比較して、より低い分子量(Mw)を有し、本質的に2つのケイ素基を有する前記従来技術の構造性前駆体は、より高いMw及びより高い沸点を有し、それにより、本明細書に記載のアルコキシシラ環式又はアシルオキシシラ環式前駆体を、例えば大量生産法でのプロセスに対してより便利にする。
基材を反応チャンバ内に提供すること、
ガス状試薬を反応チャンバ内に導入すること、ここで、前記ガス状試薬は下記式I:
反応チャンバ内のガス状試薬にエネルギーを適用して、ガス状試薬の反応を誘発して、基材上に予備膜を堆積させること、ここで、前記予備膜はポロゲンを含む、及び、前記予備膜から実質的にすべてのポロゲンを除去して、細孔及び3.2未満の誘電率を有する多孔質膜を提供すること、を含む。特定の実施形態において、構造形成性前駆体は硬化添加剤をさらに含む。
基材を反応チャンバ内に提供すること、
ガス状試薬を反応チャンバ内に導入すること、ここで、前記ガス状試薬は下記式I:
反応チャンバ内のガス状試薬にエネルギーを適用して、ガス状試薬の反応を誘発して、基材上に予備膜を堆積させること、ここで、前記予備膜はポロゲンを含む、及び、前記予備膜から実質的にすべてのポロゲンを除去して、細孔及び3.2未満の誘電率を有する多孔質膜を提供すること、を含む。特定の実施形態において、構造形成性前駆体は硬化添加剤をさらに含む。
本明細書に記載されているのは、多孔質低k誘電体膜を製造するための化学蒸着(CVD)方法であり、
基材を反応チャンバ内に提供すること、反応チャンバ内に、例えば、1,1−ジメトキシ−1−シラシクロペンタン又は1,1−ジエトキシ−1−シラシクロペンタンなどのアルコキシシラ環式又はアシルオキシシラ環式化合物を含む少なくとも1つの構造形成性前駆体、及びポロゲンを含むガス状試薬を導入すること、反応チャンバ内のガス状試薬にエネルギーを適用して、ガス状試薬の反応を誘発して、基材上に予備膜を堆積させること、ここで、前記予備膜は、ポロゲン及び有機ケイ酸塩ガラスを含む、及び、前記予備膜から実質的にすべてのポロゲンを除去して、細孔及び3.2未満の誘電率を有する多孔質膜を提供することを含む。
例としては、シクロヘキサン、1,2,4−トリメチルシクロヘキサン、1−メチル−4−(1−メチルエチル)シクロヘキサン、シクロオクタン、メチルシクロオクタン、メチルシクロヘキサンなどが挙げられる。
例としては、エチレン、プロピレン、アセチレン、ネオヘキサン、1,3−ブタジエン、2−メチル−1,3−ブタジエン、2,3−ジメチル−2,3−ブタジエン、置換ジエンなどが挙げられる。
例としては、パラシメン、シクロオクテン、1,5−シクロオクタジエン、ジメチルシクロオクタジエン、シクロヘキセン、ビニルシクロヘキサン、ジメチルシクロヘキセン、α−テルピネン、ピネン、リモネン、ビニルシクロヘキセンなどが挙げられる。
例としては、ノルボルナン、スピロノナン、デカヒドロナフタレンなどが挙げられる。
例としては、カンフェン、ノルボルネン、ノルボルナジエン、5−エチリデン−2−ノルボルネンなどが挙げられる。
例としてはアダマンタンが挙げられる。
代表的な膜又は200mmウエハ処理は、様々な異なる化学前駆体及びプロセス条件から、Advance Energy 200 RFジェネレーターが取り付けられた200 mm DxZ反応チャンバ又は真空チャンバ内のApplied Materials Precision-5000システムを使用して、プラズマ増強CVD(PECVD)法により形成された。PECVDプロセスは、一般的に次の基本的な工程を含んだ:ガスフローの初期設定及び安定化、シリコンウエハ基材上への膜の堆積、及び、基材取り出し前のチャンバのパージ/排気。堆積後に、膜はUVアニーリングを受けた。UVアニーリングは、広帯域UV電球を備えたFusion UVシステムを使用して、10トル未満の1つ以上の圧力及び<400℃の1つ以上の温度でヘリウムガスフロー下でウエハを保持して行った。実験は、p型Siウエハ(抵抗率範囲=8〜12Ω-cm)で行われた。
構造形成性DEMS及びポロゲン前駆体シクロオクタンの複合層を、200mm処理のための以下のプロセス条件を使用して堆積した。200標準立方センチメートル(sccm)のCO2キャリアガスフロー、10sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、275℃のウエハチャック温度、600Wプラズマが適用された8トルのチャンバ圧力を使用して、960ミリグラム/分(mg/min)のシクロオクタン及び240mg/minの流速で、直接液体注入(DLI)により、前駆体を反応チャンバに供給した。次に、得られた膜をUVアニールして、シクロオクタンポロゲンを除去し、膜を機械的に強化した。上記のように、膜の様々な属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量パーセント炭素(%C))を得た。
構造形成性DMSCP及びポロゲン前駆体シクロオクタンの複合層は、200mm処理のために以下のプロセス条件を使用して堆積した。200立方センチメートル(sccm)のCO2キャリアガスフロー、20sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、250℃のウエハチャック温度、600Wプラズマが適用された8トルのチャンバ圧力を使用して、960mg/分のシクロオクタンの流速で、直接液体注入(DLI)により、前駆体を反応チャンバに供給し、そして240mgmのDMSCPをDLIによりチャンバに供給した。次に、得られた膜をUVアニールして、ポロゲンを除去し、膜を機械的に強化した。上記のように、膜の様々な属性(例えば、誘電率(k)、弾性率(GPa)及び原子質量パーセント炭素(%C))を得た。
MESCPを構造形成性前駆体として、シクロオクタンをポロゲン前駆体として使用して、複合層を堆積させた。200mm処理のために以下のプロセス条件を使用して堆積した。200標準立方センチメートル(sccm)のヘリウムキャリアガスフロー、25sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、300℃のウエハチャック温度、600Wプラズマが120秒間適用された8トルのチャンバ圧力を使用して、280ミリグラム/分(mg/min)のDESCP、800mf/minのシクロオクタンの流速で、直接液体注入(DLI)により、前駆体を反応チャンバに供給した。得られた堆積されたままの膜は厚さが567nmであり、屈折率(RI)が1.45であった。堆積後に、複合膜を12分間UVアニーリング工程に暴露した。UVアニール後に、膜は17%収縮して厚さ467nmになり、1.39の屈折率であった。この膜は2.54の誘電率及び8.6GPaの弾性率及び1.3GPaの硬度を有していた。元素組成はXPSにより、23.0%C、45.6%O、31.4%Siであると分析した。
DEMSを構造形成性前駆体として、シクロオクタンをポロゲン前駆体として使用して、複合層を堆積させた。200mmウエハ上に複合膜を堆積させるための堆積条件は以下のとおりである。200標準立方センチメートル(sccm)のヘリウムキャリアガスフロー、25sccmのO2、350ミリインチのシャワーヘッド/ウエハ間隔、250℃のウエハチャック温度、600Wプラズマが80秒間適用された8トルのチャンバ圧力を使用して、220ミリグラム/分(mg/min)のDEMS、880mf/minのシクロオクタンの流速で、直接液体注入(DLI)により、前駆体を反応チャンバに供給した。得られた堆積されたままの膜は厚さが411nmであり、屈折率(RI)が1.44であった。堆積後に、複合膜を12分間UVアニーリング工程に暴露した。UVアニール後に、膜は19%収縮して厚さ334nmになり、1.36の屈折率であった。この膜は2.50の誘電率及び8.5GPaの弾性率及び1.0GPaの硬度を有していた。元素組成はXPSにより、13.2%C、54.0%O、32.8%Siであると分析した。
磁気攪拌棒及び還流冷却器を備えた3口の2000mL丸底フラスコにおいて、900mLヘキサン中の130.0g(838mmol)の1,1−ジクロロ−1−シラシクロペンタンに、内容物を加熱還流しながら添加漏斗を介して93.0g(2012mmol)のエタノールを添加した。添加が完了したら、反応混合物をさらに30分間還流し、次いで、窒素でパージしてHClを除去しながら室温まで冷却した。反応混合物のGCは、所望の1,1−ジエトキシ−1−シラシクロペンタンへの約75%の転化を示した。残りは一置換1−クロロ−1−エトキシ−1−シラシクロペンタンであった。追加のエタノール19.0g(419mmol)及びトリエチルアミン42.0g(419mmol)を反応混合物に加えて、一置換種を生成物に完全に転化させた。得られた白色スラリーを室温で一晩攪拌した。次に、スラリーをろ過した。周囲圧力下での蒸留により溶媒を除去した。生成物を143gの量で5トルの圧力下で46℃の沸点で真空蒸留した。収率は90%であった。
磁気攪拌棒を備えた3口3000mL丸底フラスコにおいて、1800mLのヘキサン/THFの1:1混合物中の100.0g(645mmol)の1,1−ジクロロ−1−シラシクロペンタンに、260.0g(2579mmol)のトリエチルアミン、次いで、62.0g(1934mmol)のメタノールを0℃で添加した。得られた白色スラリーを室温に温め、16時間攪拌し、その後に、中程度の多孔度のフィルタで濁ったろ液としてろ過した。ろ液を追加のメタノール20.0g(624mmol)で処理し、数時間撹拌した後に、再度ろ過した。無色透明のろ液のGCは、所望の1,1−ジメトキシ−1−シラシクロペンタンへの完全な転化を示した。50℃で100トルの真空下でロトバップによりろ液から揮発性物質を除去した。生成物を、純度90%で60gの量で、65トルの圧力下に75℃の沸点で真空蒸留することにより精製した。収率は58%であった。
Claims (31)
- 式SivOwCxHyFz(式中、v+w+x+y+z=100%であり、vは10〜35原子%であり、wは10〜65原子%であり、xは5〜40原子%であり、yは10〜50原子%であり、zは0〜15原子%である)で表される誘電体膜の製造方法であって、前記方法は、
反応チャンバ内に基材を提供すること、
アルコキシシラ環式又はアシルオキシシラ環式化合物を含む少なくとも1つの構造形成性前駆体及びポロゲンを含み、ここで、前記アルコキシシラ環式又はアシルオキシシラ環式化合物は以下の式I
前記反応チャンバ内の前記ガス状試薬にエネルギーを適用して、前記ガス状試薬の反応を誘発して、前記基材上に予備膜を堆積させること、ここで、前記予備膜は前記ポロゲンを含む、及び、
前記予備膜から前記ポロゲンの少なくとも一部を除去して、細孔及び約2.6以下の誘電率を有する多孔質誘電体膜を提供すること、
を含む、方法。 - 前記構造形成性前駆体は硬化添加剤をさらに含む、請求項1記載の方法。
- 前記アルコキシシラ環式又はアシルオキシシラ環式化合物は1,1−ジメトキシ−1−シラシクロペンタン、1,1−ジエトキシ−1−シラシクロペンタン、1,1−ジ-n-プロポキシ−1−シラシクロペンタン、1,1−ジ-イソ-プロポキシ−1−シラシクロペンタン、1,1−ジメトキシ−1−シラシクロブタン、1,1−ジエトキシ−1−シラシクロブタン、1,1−ジ−n−プロポキシ−1−シラシクロブタン、1,1−ジ-イソ-プロポキシ−1−シラシクロブタン、1,1−ジメトキシ−1−シラシクロヘキサン、1,1−ジ-イソ-プロポキシ−1−シラシクロヘキサン、1,1−ジ−n−プロポキシ−1−シラシクロヘキサン、1−メトキシ−1−アセトキシ−1−シラシクロペンタン、1,1−ジアセトキシ−1−シラシクロペンタン、1−メトキシ−1−アセトキシ−1−シラシクロブタン、1,1−ジアセトキシ−1−シラシクロブタン、1−メトキシ−1−アセトキシ−1−シラシクロヘキサン、1,1−ジアセトキシ−1−シラシクロヘキサン、1−エトキシ−1−アセトキシ−1−シラシクロペンタン、1−エトキシ−1−アセトキシ−1−シラシクロブタン及びそれらの組み合わせからなる群より選ばれる少なくとも1つを含む、請求項1記載の方法。
- 前記ポロゲンはシクロオクタンである、請求項1記載の方法。
- 前記硬化添加剤はテトラエトキシシランを含む、請求項2記載の方法。
- 前記硬化添加剤はテトラメトキシシランを含む、請求項2記載の方法。
- プラズマ増強化学蒸着法である、請求項1記載の方法。
- 前記反応混合物はO2、N2O、NO、NO2、CO2、水、H2O2、オゾン及びそれらの組み合わせからなる群より選ばれる少なくとも1つの酸化剤を含む、請求項1記載の方法。
- 反応混合物は酸化剤を含まない、請求項1記載の方法。
- 適用工程における前記反応チャンバはHe、Ar、N2、Kr、Xe、NH3、H2、CO2及びCOからなる群より選ばれる少なくとも1つのガスを含む、請求項1記載の方法。
- 前記除去工程は、熱処理、紫外線(UV)処理、電子ビーム処理、ガンマ線処理及びそれらの組み合わせからなる群より選ばれる少なくとも1つの処理を含む、請求項1記載の方法。
- 前記UV処理は熱処理の少なくとも一部の間に行われる、請求項11記載の方法。
- 前記ポロゲンの前駆体は、
a.)式CnH2n(式中、n=4〜14である)の置換又は非置換の環状炭化水素、
b.)一般式CnH(2n+2)−2y(式中、n=2〜20及びy=0〜nであり、n=4〜14である)の置換又は非置換の炭化水素、
c.)式CnH2n−2x(式中、xは分子内の不飽和部位の数であり、n=4〜14である)を有する、置換又は非置換の単一又は複数の不飽和環状炭化水素、
d.)式CnH2n−2(式中、n=4〜14である)の置換又は非置換の二環式炭化水素、
e.)式CnH2n−(2+2x)(式中、xは分子内の不飽和部位の数であり、n=4〜14であり、二環式構造中の炭素数は4〜12である)を有する置換又は非置換の多不飽和二環式炭化水素、及び、
f.)式CnH2n−4(式中、n=4〜14であり、三環式構造の炭素数は4〜12である)の置換又は非置換の三環式炭化水素、
からなる群より選ばれる、請求項1記載の方法。 - 請求項13における前記ポロゲンの前駆体はシクロヘキサン、1,2,4−トリメチルシクロヘキサン、1−メチル−4−(1−メチルエチル)シクロヘキサン、シクロオクタン、メチルシクロオクタン、エチレン、プロピレン、アセチレン、ネオヘキサン、1,3−ブタジエン、2−メチル−1,3−ブタジエン、2,3−ジメチル−2,3−ブタジエン、置換ジエン、パラシメン、シクロオクテン、1,5−シクロオクタジエン、シクロヘキセン、ビニルシクロヘキサン、ジメチルシクロヘキセン、α-テルピネン、ピネン、リモネン、ビニルシクロヘキセン、ノルボルナン、スピロノナン、カンフェン、ノルボルネン、ノルボルナジエン、5−エチリデン−2−ノルボルネン、デカヒドロナフタレン、アダマンチン及びそれらの組み合わせからなる群より選ばれる少なくとも1つを含む、請求項1記載の方法。
- 誘電体膜の化学蒸着のための組成物であって、組成物は以下の式I:
- 前記アルコキシシラ環式又はアシルオキシシラ環式化合物は、1,1−ジメトキシ−1−シラシクロペンタン、1,1−ジエトキシ−1−シラシクロペンタン、1,1−ジ−n−プロポキシ−1−シラシクロペンタン、1,1−ジ-イソ-プロポキシ−1−シラシクロペンタン、1,1−ジメトキシ−1−シラシクロブタン、1,1−ジエトキシ−1−シラシクロブタン、1,1−ジ−n−プロポキシ−1−シラシクロブタン、1,1−ジ-イソ-プロポキシ−1−シラシクロブタン、1,1−ジメトキシ−1−シラシクロヘキサン、1,1−ジ-イソ-プロポキシ−1−シラシクロヘキサン、1,1−ジ−n−プロポキシ−1−シラシクロヘキサン、1−メトキシ−1−アセトキシ−1−シラシクロペンタン、1,1−ジアセトキシ−1−シラシクロペンタン、1−メトキシ−1−アセトキシ−1−シラシクロブタン、1,1−ジアセトキシ−1−シラシクロブタン、1−メトキシ−1−アセトキシ−1−シラシクロヘキサン、1,1−ジアセトキシ−1−シラシクロヘキサン、1−エトキシ−1−アセトキシ−1−シラシクロペンタン、1−エトキシ−1−アセトキシ−1−シラシクロブタン及びそれらの組み合わせからなる群より選ばれる少なくとも1つを含む、請求項15記載の組成物。
- 前記ハロゲン化物は塩化物イオンを含む、請求項15記載の組成物。
- 前記化合物は、ハロゲン化物、水及びそれらの組み合わせからなる群より選ばれる1つ以上の不純物を実質的に含まない、請求項18記載の使用。
- 前記アルコキシシラ環式又はアシルオキシシラ環式化合物は、1,1−ジメトキシ−1−シラシクロペンタン、1,1−ジエトキシ−1−シラシクロペンタン、1,1−ジ−n−プロポキシ−1−シラシクロペンタン、1,1−ジ-イソ-プロポキシ−1−シラシクロペンタン、1,1−ジメトキシ−1−シラシクロブタン、1,1−ジエトキシ−1−シラシクロブタン、1,1−ジ−n−プロポキシ−1−シラシクロブタン、1,1−ジ-イソ-プロポキシ−1−シラシクロブタン、1,1−ジメトキシ−1−シラシクロヘキサン、1,1−ジ-イソ-プロポキシ−1−シラシクロヘキサン、1,1−ジ−n−プロポキシ−1−シラシクロヘキサン、1−メトキシ−1−アセトキシ−1−シラシクロペンタン、1,1−ジアセトキシ−1−シラシクロペンタン、1−メトキシ−1−アセトキシ−1−シラシクロブタン、1,1−ジアセトキシ−1−シラシクロブタン、1−メトキシ−1−アセトキシ−1−シラシクロヘキサン、1,1−ジアセトキシ−1−シラシクロヘキサン、1−エトキシ−1−アセトキシ−1−シラシクロペンタン、1−エトキシ−1−アセトキシ−1−シラシクロブタン及びそれらの組み合わせからなる群より選ばれる少なくとも1つを含む、請求項18記載の使用。
- 前記ハロゲン化物は塩化物イオンを含む、請求項19記載の使用。
- 前記塩化物イオンは50ppm未満である、請求項21記載の使用。
- 前記塩化物イオンは10ppm未満である、請求項21記載の使用。
- 前記塩化物イオンは5ppm未満である、請求項21記載の使用。
- 前記蒸着は化学蒸着である、請求項18記載の使用。
- 前記化学蒸着はプラズマ増強化学蒸着である、請求項25記載の使用。
- キャリアガス及び酸化剤からなる群より選ばれる少なくとも1つの要素をさらに含む、請求項15記載の組成物。
- 前記要素はヘリウム及び酸素からなる群より選ばれる少なくとも1つの要素を含む、請求項27記載の組成物。
- 少なくとも1つの硬化添加剤をさらに含む、請求項15記載の組成物。
- 前記硬化添加剤は少なくとも1つのテトラアルコキシシランを含む、請求項29記載の組成物。
- 膜構造は−CH2−メチレン及び−CH2CH2−エチレン架橋の少なくとも1つを含む方法により形成された膜。
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