JP2020525648A - 炭化ケイ素を含む繊維および発泡体の製造方法、およびその使用 - Google Patents
炭化ケイ素を含む繊維および発泡体の製造方法、およびその使用 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 405
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 388
- 239000006260 foam Substances 0.000 title claims abstract description 163
- 239000000835 fiber Substances 0.000 title claims abstract description 123
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 109
- 239000002243 precursor Substances 0.000 claims abstract description 107
- 238000000034 method Methods 0.000 claims abstract description 92
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910001416 lithium ion Inorganic materials 0.000 claims abstract description 44
- 239000007791 liquid phase Substances 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000010405 anode material Substances 0.000 claims abstract description 24
- 238000003860 storage Methods 0.000 claims abstract description 17
- 239000012808 vapor phase Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 114
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 239000002184 metal Substances 0.000 claims description 84
- 239000000203 mixture Substances 0.000 claims description 70
- 239000012071 phase Substances 0.000 claims description 52
- 239000003153 chemical reaction reagent Substances 0.000 claims description 43
- 239000000243 solution Substances 0.000 claims description 42
- 239000006185 dispersion Substances 0.000 claims description 40
- 229910045601 alloy Inorganic materials 0.000 claims description 38
- 239000000956 alloy Substances 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 28
- 239000010439 graphite Substances 0.000 claims description 25
- 229910002804 graphite Inorganic materials 0.000 claims description 25
- 239000011888 foil Substances 0.000 claims description 17
- 239000007790 solid phase Substances 0.000 claims description 14
- 238000005496 tempering Methods 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims description 4
- 239000012763 reinforcing filler Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000004918 carbon fiber reinforced polymer Substances 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims description 3
- 238000013016 damping Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000005340 laminated glass Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 description 63
- 239000007789 gas Substances 0.000 description 37
- 239000002245 particle Substances 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 238000005275 alloying Methods 0.000 description 20
- 239000008187 granular material Substances 0.000 description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 18
- -1 silicon carbide Chemical class 0.000 description 16
- 239000007772 electrode material Substances 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- 239000011230 binding agent Substances 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 14
- 150000002739 metals Chemical class 0.000 description 12
- 239000002210 silicon-based material Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 229910001868 water Inorganic materials 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 11
- 239000002270 dispersing agent Substances 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 239000007795 chemical reaction product Substances 0.000 description 10
- 150000004756 silanes Chemical group 0.000 description 10
- 239000011261 inert gas Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000011135 tin Substances 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910000676 Si alloy Inorganic materials 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- 230000007062 hydrolysis Effects 0.000 description 6
- 238000006460 hydrolysis reaction Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229910002091 carbon monoxide Inorganic materials 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000000499 gel Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 150000001247 metal acetylides Chemical class 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 235000000346 sugar Nutrition 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 238000002309 gasification Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 150000008163 sugars Chemical class 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910026551 ZrC Inorganic materials 0.000 description 3
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000001805 chlorine compounds Chemical class 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000004870 electrical engineering Methods 0.000 description 3
- 239000003623 enhancer Substances 0.000 description 3
- 238000001879 gelation Methods 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 229910000000 metal hydroxide Inorganic materials 0.000 description 3
- 150000004692 metal hydroxides Chemical class 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229910021426 porous silicon Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000012048 reactive intermediate Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000011856 silicon-based particle Substances 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229920000881 Modified starch Polymers 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- 150000001242 acetic acid derivatives Chemical class 0.000 description 2
- 125000005595 acetylacetonate group Chemical group 0.000 description 2
- 150000001298 alcohols Chemical group 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004566 building material Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000009795 derivation Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 150000004675 formic acid derivatives Chemical class 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 150000002483 hydrogen compounds Chemical class 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 235000019426 modified starch Nutrition 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002121 nanofiber Substances 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 125000001190 organyl group Chemical group 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 1
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 description 1
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- DGXAGETVRDOQFP-UHFFFAOYSA-N 2,6-dihydroxybenzaldehyde Chemical compound OC1=CC=CC(O)=C1C=O DGXAGETVRDOQFP-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229930091371 Fructose Natural products 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- 239000005715 Fructose Substances 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 108010009736 Protein Hydrolysates Proteins 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001963 alkali metal nitrate Inorganic materials 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 description 1
- 229910000413 arsenic oxide Inorganic materials 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- 229960002594 arsenic trioxide Drugs 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 150000002484 inorganic compounds Chemical group 0.000 description 1
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 229960004903 invert sugar Drugs 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920003257 polycarbosilane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002910 solid waste Substances 0.000 description 1
- 238000003797 solvolysis reaction Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- NKLYMYLJOXIVFB-UHFFFAOYSA-N triethoxymethylsilane Chemical compound CCOC([SiH3])(OCC)OCC NKLYMYLJOXIVFB-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
Description
(a)少なくとも1つの炭素源と少なくとも1つのシリコン源を含有する液体および/または気体前駆体が、反応器の第1のゾーン、特に第1の温度ゾーンに導入され、該前駆体が分解されるように、1,100〜2,100℃の範囲の温度に加熱されること、および
(b)反応器の第2のゾーン、特に第2の温度ゾーンにおいて、炭化ケイ素含有繊維または炭化ケイ素含有ナノおよび/またはマイクロ構造発泡体が、基板上に堆積されることにある。
SiC1−X (I)
ここで、x = 0.05〜0.8、特に0.07〜0.5、好ましくは0.09〜0.4、より好ましくは0.1〜0.3である。
R1 4−nSiR2 n (I)
ここで、
R1,R2=アルキル、特にC1−からC5−アルキル、好ましくはC1−からC3−アルキル、より好ましくはC1−および/またはC2−アルキル;
アリール、特にC6−からC20−アリール、好ましくはV6−からC15−アリール、より好ましくはC6−からC10−アリール;
オレフィン、特に末端オレフィン、好ましくはC2−からC10−オレフィン、より好ましくはC2−からC8−オレフィン、特に好ましくはC2−からC5−オレフィン、好ましくはC2−および/またはC3−オレフィン、特に優先的にビニル;
ハロゲン化物、特に塩化物および/または臭化物;
アルコキシ、特にC1−からC6−アルコキシ、好ましくはC1−からC4−アルコキシ、より好ましくはC1−および/またはC2−アルコキシ; そして
n=1−4。
(A)少なくとも1つのケイ素含有化合物、
(B)少なくとも1つの炭素含有化合物、
(C)少なくとも1つの溶媒または分散剤; そして
(D)付加的に、ドーピング試薬および/または合金化試薬、を含有する。
R4−nSiXn (II)
ここで、
R=アルキル、特にC1−からC5−アルキル、好ましくはC1−からC3−アルキル、より好ましくはC1−および/またはC2−アルキル;
アリール、特にC6−からC20−アリール、好ましくはC6−からC15−アリール、より好ましくはC6−からC10−アリール;
オレフィン、特に末端オレィン、好ましくはC2−からC10−オレフィン、より好ましくはC2−からC8−オレフィン、特に好ましくはC2−からC5−オレフィン、優先的にC2−および/またはC3−オレフィン、特に優先的にビニル;
アミン、特にC2−からC10−アミン、好ましくはC2−からC8−アミン、より好ましくはC2−からC5−アミン、特に好ましくはC2−および/またはC3−アミン;
カルボン酸、特にC2−からC10−カルボン酸、好ましくはC2−からC8−カルボン酸、より好ましくはC2−からC5−カルボン酸、特に好ましくはC2−および/またはC3−カルボン酸;
アルコール、特にC2−からC10−アルコール、好ましくはC2−からC8−アルコール、より好ましくはC2−からC5−アルコール、特に好ましくはC2−および/またはC3−アルコール;
X=ハロゲン化物、特に塩化物および/または臭化物;
アルコキシ、特にC1−からC6−アルコキシ、好ましくはC1−からC4−アルコキシ、より好ましくはC1−および/またはC2−アルコキシ;そして
n=1−4、特に3または4である。
R4−nSiXn (IIa)
ここで、
R=C1−からC3−アルキル、特にC1−および/またはC2−アルキル;
C6−からC15−アリール、特にC6−からC10−アリール;
C2−および/またはC3−オレフィン、特にビニル;
X=アルコキシ、特にC1−からC6−アルコキシ、好ましくはC1−からC4−アルコキシ、より好ましくはC1−および/またはC2−アルコキシ;そして
n=3または4である。
(a)少なくとも1つの反応器であって、
(i)第1の温度ゾーン;および
(ii)第2の温度ゾーンを具備するものにおいて、
2つの温度ゾーンの温度は、特に互いに独立して、特に制御ユニットによって制御可能であること、
(b)少なくとも1つの炭素源および少なくとも1つのケイ素源および任意でドーピング試薬を含む気相および/または液相前駆体を、前記反応器の第1の温度ゾーンに導入し、特に注入するための少なくとも1つの導入装置、特に注入装置;
そして
(c)炭化ケイ素含有繊維および/または炭化ケイ素含有ナノまたはマイクロ構造発泡体を堆積させるための、前記反応器の第2の温度ゾーン内の少なくとも1つの基板、を具備するものである。
(a)少なくとも1つの炭素源および少なくとも1つのケイ素源を含む固相、液相および/または気相の前駆体が、反応器の第1のゾーン、特に第1の温度ゾーンに導入し、前駆体が分解されるように1,100〜1,800℃の範囲内の温度まで加熱されること、および
(b)反応器の第2のゾーン、特に第2の温度ゾーンにおいて、ナノまたはマイクロ構造炭化ケイ素発泡体がシート材料上に堆積されること、にある。
元素が還元され、揮発性の酸化された炭素と水素の化合物、特に水とCO2が形成され、気相を介して除去される。
前記装置が、
(a)少なくとも1つの反応器であって、
(i)第1の温度ゾーン;および
(ii)第2の温度ゾーン;を具備し、
ここで、2つの温度ゾーンにおける温度は、特に互いに独立して、特に制御ユニットによって制御可能であるもの;
(b)少なくとも1つの炭素源および少なくとも1つのケイ素源並びに付加的にドーピング試薬を含有する固相、液相および/または気相の前駆体を、前記反応器の第1の温度ゾーンに導入するための少なくとも1つの導入装置、および
(c)反応器(2)を通して、特に反応器の第2の温度ゾーンを通してシート材料を移動させるための少なくとも1つの輸送装置および/またはシート材料を焼き戻す焼き戻し装置、を具備することにある。
2 反応器
3 第1の温度ゾーン
4 第2の温度ゾーン
5 前駆体
6 導入装置
7 基板
7a シート材料
8 加熱装置
9 炭化ケイ素発泡体
10 スルース装置
11 焼き入れ装置
Claims (39)
- 炭化ケイ素含有繊維または炭化ケイ素含有ナノおよび/またはマイクロ構造発泡体を製造する方法であって、
(a)少なくとも1つの炭素源と少なくとも1つのケイ素源を含む液相および/または気相前駆体が、反応器の第1のゾーン、特に第1の温度ゾーンに導入され、前記前駆体が分解されるように、1,300〜2,100℃の範囲の温度に加熱すること、および
(b)反応器の第2のゾーン、特に第2の温度ゾーンにおいて、炭化ケイ素含有繊維および/または炭化ケイ素含有ナノまたはマイクロ構造発泡体が基板上に堆積されること、を特徴とする方法。 - 炭化ケイ素含有繊維および炭化ケイ素含有ナノおよび/またはマイクロ構造発泡体が、任意にドープされたナノ結晶炭化ケイ素からなることを特徴とする請求項1に記載の方法。
- 炭化ケイ素含有繊維および炭化ケイ素含有ナノまたはマイクロ構造発泡体が非化学量論的炭化ケイ素または炭化ケイ素合金からなることを特徴とする請求項1記載の方法。
- 温度勾配が、反応器内、特に反応器の第1のゾーンと第2のゾーンとの間に、特に少なくとも局所的に存在することを特徴とする請求項1〜3のいずれか1つに記載の方法。
- 温度は、反応器の第1のゾーンよりも反応器の第2のゾーンの方が低いことを特徴とする請求項1〜4のいずれか1つに記載の方法。
- 反応器の第2のゾーンの温度が、第1のゾーンの温度よりも少なくとも30℃、特に少なくとも40℃、好ましくは少なくとも50℃低く設定されることを特徴とする請求項5に記載の方法。
- 前駆体が、液相および/または気相の炭素およびケイ素源の混合物ならびに炭素およびケイ素源を含む溶液または分散液、特にSiC前駆体ゾル、およびそれらの混合物から選択されることを特徴とする請求項1〜6のいずれか1つに記載の方法。
- 前記前駆体、特に気相および/または液相の炭素およびケイ素源の混合物が、少なくとも1つのドーピング試薬をさらに含むことを特徴とする請求項7記載の方法。
- 前駆体が、細かく分布して反応器に導入され、特に注入されることを特徴とする請求項1〜8のいずれか1つに記載の方法。
- 前記基板が、金属基板、特に金属箔、グラファイト基板、特にグラファイトパネルおよび/またはグラファイト繊維、カーボンナノチューブ、カーボンファイバー強化プラスチックパネル、セラミック基板、炭化ケイ素基板およびそれらの混合から選択されることを特徴とする請求項1〜9のいずれか1つに記載の方法。
- 炭化ケイ素含有繊維を製造するために、反応器の第1の温度ゾーンの温度が、1,500〜2,100℃、特に1,600〜2,000℃、好ましくは1,700〜1,900℃に設定されることを特徴とする請求項1〜10に記載の方法。
- 炭化ケイ素含有繊維を製造するために、反応器の第2のゾーンの温度が、反応器の第1のゾーンよりも50〜300℃、特に80〜250℃、好ましくは100〜200℃低い温度に設定されることを特徴とする請求項1〜11のいずれか1つに記載の方法。
- 炭化ケイ素含有ナノおよび/またはマイクロ構造発泡体を製造するために、反応器の第1ゾーンの温度が、1,100〜1,800℃、特に1,200〜1,600℃、好ましくは1,300〜1,500℃に設定されることを特徴とする請求項1〜10のいずれか1つに記載の方法。
- 炭化ケイ素含有ナノおよび/またはマイクロ構造発泡体を製造するために、反応器の第2のゾーンの温度が、反応器の第1のゾーンよりも30〜200℃、特に40〜150℃、好ましくは50〜100℃低く設定されることを特徴とする請求項1〜10または13のいずれか1つに記載の方法。
- 請求項1〜14のいずれか1つに記載の方法により得られる炭化ケイ素含有繊維。
- 複合材料を製造するための、特に軽量建築用用途または合わせガラスのためのおよび/または強化フィラーとしての請求項15記載の炭化ケイ素含有繊維の使用。
- アノードを製造するためのおよび/またはアノード材料としての請求項15に記載の炭化ケイ素含有繊維、特に炭化ケイ素含有繊維の使用。
- 請求項1〜14のいずれか1つに記載の方法により得られる炭化ケイ素含有ナノおよび/またはマイクロ構造発泡体。
- シール、サスペンション、スプリング支柱、ダンピング、絶縁、特に振動および/または音を吸収するための膜およびフィルターにおける請求項18に記載の炭化ケイ素含有ナノおよび/またはマイクロ構造発泡体の使用。
- 電極、特にアノードおよび/またはアノード材料としての、請求項18に記載の炭化ケイ素含有ナノおよび/またはマイクロ構造発泡体、特にナノおよび/またはマイクロ構造炭化ケイ素発泡体の使用。
- 炭化ケイ素含有繊維またはナノおよび/またはマイクロ構造発泡体を製造するための装置(1)において、該装置(1)が、
(a) 少なくとも1つの反応器(2)であって、
(i) 第1の温度ゾーン(3);および
(ii) 第2の温度ゾーン(4)を具備し、
2つの温度ゾーンの温度は、特に互いに独立して、特に制御ユニットによって制御可能であるもの;
(b) 少なくとも1つの炭素源および少なくとも1つのケイ素源並びに任意でドーピング試薬を含む気相および/または液相前駆体を、前記反応器の第1の温度ゾーンに導入するための少なくとも1つの導入装置、特に注入するための注入装置;および
(c) 炭化ケイ素含有繊維および/または炭化ケイ素含有ナノまたはマイクロ構造発泡体を堆積させるための反応器(2)の第2の温度ゾーン(4)内の少なくとも1つの基板(7);を具備することを特徴とする装置。 - 第1の温度ゾーン(3)の温度が、1,100〜2,100℃の範囲で制御可能であることを特徴とする請求項21に記載の装置。
- 第1の温度ゾーン(3)と第2の温度ゾーン(4)との間の温度勾配が設定可能であること、特に第2の温度ゾーンの温度(4)が第1の温度ゾーン(3)よりも低く設定されることを特徴とする請求項21または22に記載の装置。
- 前記反応器(2)が、特に第1の温度ゾーン(3)の領域に少なくとも1つの加熱装置(8)を含むことを特徴とする請求項21〜23のいずれか1つに記載の装置。
- 前記反応器(2)が、該反応器(2)に、特に該反応器(2)を通して基板(7)を搬送するための。および/または、基板(7)を反応器(2)に導入し、基板(7)を反応器(2)から移動させるための少なくとも1つの輸送装置を具備することを特徴とする請求項21〜24のいずれか1つに記載の装置。
- 前記反応器(2)および/または輸送装置が、基板(7)を焼戻しするための焼戻し装置(11)を含むことを特徴とする請求項21〜25のいずれか1つに記載の装置。
- (a)少なくとも1つの炭素源および少なくとも1つのケイ素源を含む固相、液相および/または気相の前駆体が、反応器の第1のゾーン、特に第1の温度ゾーンに導入され、前駆体が分解されるように1,100〜1,800℃の範囲の温度まで加熱されること、および、
(b)反応器の第2のゾーン、特に第2の温度ゾーンでは、ナノまたはマイクロ構造炭化ケイ素発泡体がシート材料上に堆積されることを特徴とするナノまたはマイクロ構造炭化ケイ素発泡体をシート材料に適用する方法、特に電極を製造する方法。 - 前記反応器の第1の温度ゾーンの温度が、1,200〜1,600℃、特に1300〜1500℃に設定されることを特徴とする請求項27に記載の方法。
- 前記反応器の第2のゾーンの温度が、前記反応器の第1のゾーンよりも30〜200℃、特に40〜150℃、好ましくは50〜100℃に低く設定されることを特徴とする請求項27または28に記載の方法。
- 前記シート材料が、セラミック、グラファイト、または少なくとも1つの金属を含むかそれらからなること、好ましくはそれらからなることを特徴とする請求項29に記載の方法。
- 前記シート材料が、金属シート材料、特に金属シートまたは金属箔であることを特徴とする請求項27〜30のいずれか1つに記載の方法。
- 前記シート材料が、1〜1,000μm、特に5〜100μm、好ましくは10〜20μmの厚さを有することを特徴とする請求項27〜31のいずれか1つに記載の方法。
- 前記シート材料が、細長片、特にグラファイトまたは金属細長片の形であることを特徴とする、請求項27〜32のいずれか1つに記載の方法。
- 前記シート材料が前記反応器を通って移動すること、特に反応器を通って連続的に移動することを特徴とする請求項27〜33のいずれか1つに記載の方法。
- 前記シート材料、特に金属シート材料が、前記反応器内において焼き戻されること、特に前記シート材料が、前記反応器において700〜1000℃の範囲の温度に焼き戻されることを特徴とする請求項27〜34のいずれか1つに記載の方法。
- 請求項27〜35のいずれか1つに記載の方法により得られる電極。
- シート材料とナノまたはマイクロ構造炭化ケイ素発泡体を含む電極。
- 請求項36または37に記載の電極を含むリチウムイオン蓄電池。
- ナノおよび/またはマイクロ構造炭化ケイ素発泡体をシート材料(7a)に適用するための装置、特に電極を製造するための装置であって、
該装置(1)が、
(a) 少なくとも1つの反応器(2)であって、
(i) 第1の温度ゾーン(3);および
(ii)第2の温度ゾーン(4)を具備し、
特にお互いに独立した2つの前記温度ゾーンが、特に制御ユニットによって制御可能であるもの、
(b) 少なくとも1つの炭素源および少なくとも1つのケイ素源並びに付加的にドーピング試薬を含む固相、液相および/または気相の前駆体を、前記反応器(2)の第1の温度ゾーン(3)に導入するための少なくとも1つの導入装置、および、
(c) 前記反応器(2)を介して、特に前記反応器(2)の第2の温度ゾーン(4)を介してシート材料を移動させる少なくとも1つの搬送装置、および/または、前記シート材料(7a)を焼き戻すための焼き戻し装置(11)、
を具備することを特徴とする装置。
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JP2013171627A (ja) * | 2012-02-17 | 2013-09-02 | Bridgestone Corp | 非水電解質二次電池用負極材及びリチウムイオン二次電池 |
JP2015133284A (ja) * | 2014-01-15 | 2015-07-23 | 信越化学工業株式会社 | 非水電解質二次電池用負極材 |
DE102014116868A1 (de) * | 2014-11-18 | 2016-05-19 | Universität Paderborn | Verfahren zum Herstellen eines Elektrodenmaterials für eine Batterieelektrode |
DE102015104943A1 (de) * | 2015-03-31 | 2016-10-06 | Universität Paderborn | Verfahren zum Herstellen eines nano- oder mikrostrukturierten Schaumstoffs |
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DE19713068A1 (de) * | 1997-03-27 | 1998-10-01 | Ecm Ingenieur Unternehmen Fuer | Verfahren zur Herstellung von Heißgasfilter-Elementen sowie die Verwendung des Filters zur Heißgasfiltration von Rauchgasen |
CN1210204C (zh) * | 2003-07-15 | 2005-07-13 | 中国科学院理化技术研究所 | 一种制备碳化硅的方法 |
FR2860993B1 (fr) * | 2003-10-16 | 2006-06-16 | Sicat | Filtre catalytique a base de carbure de silicium (b-sic) pour la combustion des suies issues des gaz d'echappement d'un moteur a combustion |
CN103253672B (zh) * | 2013-05-20 | 2014-11-26 | 浙江理工大学 | 基于光电催化分解水制氢的碳化硅纳米线薄膜制备方法 |
DE102015100062A1 (de) * | 2015-01-06 | 2016-07-07 | Universität Paderborn | Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid |
DE102015103739A1 (de) * | 2015-03-13 | 2016-09-15 | Universität Paderborn | Verfahren zum Herstellen einer Elektrode, Elektrode und Elektrolysevorrichtung |
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2018
- 2018-06-25 CN CN201880043539.1A patent/CN110831912A/zh active Pending
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- 2018-06-25 US US16/626,995 patent/US20200140281A1/en not_active Abandoned
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US5514350A (en) * | 1994-04-22 | 1996-05-07 | Rutgers, The State University Of New Jersey | Apparatus for making nanostructured ceramic powders and whiskers |
JP2003155567A (ja) * | 2001-11-15 | 2003-05-30 | Hiroshi Nakayama | 膜形成方法、膜、素子、アルキルシリコン化合物、及び膜形成装置 |
JP2006241496A (ja) * | 2005-03-01 | 2006-09-14 | Jtekt Corp | 被覆部材の製造方法 |
JP2013065496A (ja) * | 2011-09-20 | 2013-04-11 | Yoshiaki Nagaura | シリコン二次電池アモルファス電極の高周波大気圧プラズマcvdによる製造方法 |
JP2013171627A (ja) * | 2012-02-17 | 2013-09-02 | Bridgestone Corp | 非水電解質二次電池用負極材及びリチウムイオン二次電池 |
JP2015133284A (ja) * | 2014-01-15 | 2015-07-23 | 信越化学工業株式会社 | 非水電解質二次電池用負極材 |
DE102014116868A1 (de) * | 2014-11-18 | 2016-05-19 | Universität Paderborn | Verfahren zum Herstellen eines Elektrodenmaterials für eine Batterieelektrode |
DE102015104943A1 (de) * | 2015-03-31 | 2016-10-06 | Universität Paderborn | Verfahren zum Herstellen eines nano- oder mikrostrukturierten Schaumstoffs |
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WO2019002211A2 (de) | 2019-01-03 |
WO2019002211A3 (de) | 2019-02-21 |
DE102017114243A1 (de) | 2018-12-27 |
EP3645482A2 (de) | 2020-05-06 |
US20200140281A1 (en) | 2020-05-07 |
CN110831912A (zh) | 2020-02-21 |
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