JP2020520559A - 低クロストークの垂直接続インターフェース - Google Patents
低クロストークの垂直接続インターフェース Download PDFInfo
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Abstract
Description
Mij=ΣLn[SiSj/Sij]
ここで:
Siは、行2603の対象信号ピン116と最も近いグラウンドピン116との間の距離であり、
Sijは、行2603の対象信号ピン116と、対象信号ピン116に最も近いグラウンドピン116とは反対側で隣接する信号ピン116との間の距離であり、
Sjは、SiとSijとの和である。
Claims (15)
- 第2の集積回路コンポーネントの下方に積層されるように構成された、表面を有する第1の集積回路コンポーネントであって、前記第1の集積回路コンポーネントが、前記第1の集積回路コンポーネントの前記表面に露出した複数の第1の露出導体で終端するエスケープルーティングを備え、前記第1の露出導体が、少なくとも第1の行、第2の行、および第3の行を備える複数の行に配置され、すべてが前記複数の第1の露出導体の一部の間に画定された第1のバンクを通って延び、前記第1の行が、前記第1の集積回路コンポーネントの第1の縁部に平行かつ隣接して配置され、前記第3の行が前記第1の縁部から間隔を空けており、前記第2の行が前記第1の行と前記第3の行との間に配置され、前記第1のバンク内でデータ信号を搬送するように構成された前記第1の露出導体に対する、グラウンド信号を搬送するように構成された前記第1の露出導体のグラウンド対信号比が、前記第1の行と比べて前記第3の行においてより大きい、第1の集積回路コンポーネント
を備える、集積回路デバイス。 - 前記第1のバンク内でデータ信号を搬送するように構成された第1の露出導体に対する、グラウンド信号を搬送するように構成された第1の露出導体のグラウンド対信号比が、前記第1の行と比べて前記第2の行においてより大きい、請求項1に記載の集積回路デバイス。
- 前記第2の行の前記グラウンド対信号比が、前記第3の行の前記グラウンド対信号比より小さい、請求項2に記載の集積回路デバイス。
- 前記第1のバンクを通って延びる前記複数の行にわたる前記グラウンド対信号比が、概して、前記第1の縁部から遠い行よりも前記第1の縁部に近い行ほど小さい、または前記第1のバンクを通って延びる前記複数の行にわたる前記グラウンド対信号比が、概して、ビアが深い行よりもビアが浅い行ほど小さい、請求項1に記載の集積回路デバイス。
- 第2のコンポーネントであって、前記第2のコンポーネントの第2の表面に露出した複数の第2の露出導体で終端する回路を備える、第2のコンポーネントと、
前記第1のコンポーネントに露出した個別の導体のうちの固有の導体をそれぞれが結合する複数のはんだ接続と、
をさらに備える、請求項1に記載の集積回路デバイス。 - 前記第1の集積回路コンポーネントが集積回路(IC)ダイである、請求項1に記載の集積回路デバイス。
- 前記第1の集積回路コンポーネントがインターポーザまたはパッケージ基板であり、
前記集積回路デバイスが、
前記第1の集積回路コンポーネントの前記第1の表面に取り付けられた集積回路(IC)ダイ
をさらに備える、請求項1に記載の集積回路デバイス。 - 前記第1の集積回路コンポーネントがプリント回路基板であり、
前記集積回路デバイスが、
前記第1の集積回路コンポーネントの前記第1の表面に取り付けられた集積回路(IC)パッケージであって、前記ICパッケージが1つまたは複数のICダイを有する、集積回路(IC)パッケージ
をさらに備える、請求項1に記載の集積回路デバイス。 - 前記第1の集積回路コンポーネントが第1のプリント回路基板である、請求項1に記載の集積回路デバイス。
- 前記第1のプリント回路基板上に積層された第2のプリント回路基板
をさらに備える、請求項9に記載の集積回路デバイス。 - 第1の集積回路コンポーネントの第1の表面に露出した複数の第1の露出導体で終端するエスケープルーティングを備える第1の集積回路コンポーネントであって、前記第1の露出導体が、前記複数の第1の露出導体の一部の間に画定された第1のバンクを通って延びる複数の行に配置された前記第1の表面に露出され、前記第1のバンク内でデータ信号を搬送するように構成された前記第1の露出導体に対する、グラウンド信号を搬送するように構成された前記第1の露出導体のグラウンド対信号比が、縁部から中央にかけての勾配を有する、第1の集積回路コンポーネント
を備える、集積回路デバイス。 - 前記グラウンド対信号比が、第1の露出導体が深いビアに結合されている前記第1のバンクの内部領域において、第1の露出導体が浅いビアに結合されている前記第1のバンクの縁部領域よりも大きく、前記縁部領域が前記第1の集積回路コンポーネントの縁部に近接しており、前記内部領域が前記縁部から間隔を空けている、請求項11に記載の集積回路デバイス。
- 前記第1のバンク内の2つの行の前記グラウンド対信号比が同じである、または前記第1のバンク内の同じ深さのビアを有する行の前記グラウンド対信号比が同じである、請求項12に記載の集積回路デバイス。
- 前記第1のバンクの中間領域の前記グラウンド対信号比が、前記内部領域より大きくかつ前記縁部領域より小さく、前記中間領域が、前記内部領域のビアよりも浅くかつ前記縁部領域のビアよりも深いビアに結合された第1の露出導体を有する、請求項12に記載の集積回路デバイス。
- 前記第1の集積回路コンポーネントが、
前記第1のバンクに横方向に隣接して配置された第2のバンクであって、前記第2のバンクの縁部から中央にかけてのグラウンド対信号比が、前記第1のバンクの前記縁部から中央にかけてのグラウンド対信号比にほぼ等しい、第2のバンク
をさらに備える、請求項11に記載の集積回路デバイス。
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US15/597,505 US10314163B2 (en) | 2017-05-17 | 2017-05-17 | Low crosstalk vertical connection interface |
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PCT/US2018/030259 WO2018212977A1 (en) | 2017-05-17 | 2018-04-30 | Low crosstalk vertical connection interface |
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