JP2020509581A - 明確に定義された磁化配向を確立するための形状異方性を伴うmram参照セル - Google Patents
明確に定義された磁化配向を確立するための形状異方性を伴うmram参照セル Download PDFInfo
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- JP2020509581A JP2020509581A JP2019542530A JP2019542530A JP2020509581A JP 2020509581 A JP2020509581 A JP 2020509581A JP 2019542530 A JP2019542530 A JP 2019542530A JP 2019542530 A JP2019542530 A JP 2019542530A JP 2020509581 A JP2020509581 A JP 2020509581A
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- 230000005415 magnetization Effects 0.000 title claims abstract description 23
- 230000005291 magnetic effect Effects 0.000 claims abstract description 15
- 230000015654 memory Effects 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002885 antiferromagnetic material Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
本願は、2017年2月8日に出願された米国仮特許出願第62/456,545号に対する優先権を主張するものである。
Claims (7)
- 装置であって、
高アスペクト比を伴う参照磁気トンネル接合であって、前記参照磁気トンネル接合は、短軸に沿った磁化を伴う参照層と、長軸に沿った磁化を伴う貯蔵層とを含み、貯蔵層磁化は、前記短軸に沿った前記磁化と略垂直であり、前記短軸と前記長軸との間の磁化配向は、前記高アスペクト比によって引き起こされる形状異方性によって維持される、参照磁気トンネル接合
を備える、装置。 - 前記参照磁気トンネル接合は、参照磁気トンネル接合スタックからの参照信号との比較のための感知信号を生成する略円形磁気トンネル接合メモリ要素に対応する面積を有する、請求項1に記載の装置。
- 前記参照信号は、最大抵抗感知信号と最小抵抗感知信号との間のほぼ中間である、請求項2に記載の装置。
- 前記参照磁気トンネル接合スタックは、可変抵抗器、演算増幅器、およびプルダウントランジスタを伴う参照ブロック内に位置付けられる、請求項1に記載の装置。
- 前記感知信号を生成する略円形磁気トンネル接合状態は、可変抵抗器、演算増幅器、およびプルダウントランジスタを伴う感知ブロック内に位置付けられる、請求項2に記載の装置。
- 前記感知信号および前記参照信号を処理するためのコンパレータをさらに備える、請求項2に記載の装置。
- 前記参照磁気トンネル接合は、異なるアスペクト比または面積を伴う複数の参照磁気トンネル接合のうちの1つを選択するためのマルチプレクサを伴う参照ブロック内に位置付けられる、請求項1に記載の装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022003025A JP2022036234A (ja) | 2017-02-08 | 2022-01-12 | 明確に定義された磁化配向を確立するための形状異方性を伴うmram参照セル |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762456545P | 2017-02-08 | 2017-02-08 | |
US62/456,545 | 2017-02-08 | ||
PCT/US2018/017288 WO2018148327A1 (en) | 2017-02-08 | 2018-02-07 | Mram reference cell with shape anisotropy to establish a well-defined magnetization orientation |
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JP2022003025A Division JP2022036234A (ja) | 2017-02-08 | 2022-01-12 | 明確に定義された磁化配向を確立するための形状異方性を伴うmram参照セル |
Publications (1)
Publication Number | Publication Date |
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JP2020509581A true JP2020509581A (ja) | 2020-03-26 |
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JP2019542530A Pending JP2020509581A (ja) | 2017-02-08 | 2018-02-07 | 明確に定義された磁化配向を確立するための形状異方性を伴うmram参照セル |
JP2022003025A Pending JP2022036234A (ja) | 2017-02-08 | 2022-01-12 | 明確に定義された磁化配向を確立するための形状異方性を伴うmram参照セル |
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JP2022003025A Pending JP2022036234A (ja) | 2017-02-08 | 2022-01-12 | 明確に定義された磁化配向を確立するための形状異方性を伴うmram参照セル |
Country Status (4)
Country | Link |
---|---|
US (1) | US10460779B2 (ja) |
EP (1) | EP3580758A4 (ja) |
JP (2) | JP2020509581A (ja) |
WO (1) | WO2018148327A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017665A (ja) * | 2001-04-26 | 2003-01-17 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
JP2003085966A (ja) * | 2001-09-07 | 2003-03-20 | Canon Inc | 磁気メモリ装置の読み出し回路 |
JP2004103125A (ja) * | 2002-09-10 | 2004-04-02 | Toshiba Corp | 磁気ランダムアクセスメモリ |
JP2007235051A (ja) * | 2006-03-03 | 2007-09-13 | Ricoh Co Ltd | 磁気抵抗効果素子、磁気抵抗効果素子の基板および磁気抵抗効果素子の製造方法 |
JP2009004440A (ja) * | 2007-06-19 | 2009-01-08 | Toshiba Corp | 磁気ランダムアクセスメモリ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005086170A1 (ja) * | 2004-03-05 | 2005-09-15 | Nec Corporation | トグル型磁気ランダムアクセスメモリ |
US7755936B2 (en) | 2008-01-28 | 2010-07-13 | Qimonda Ag | Integrated circuits, cell, cell arrangement, method of reading a cell, memory module |
ATE544153T1 (de) * | 2009-05-08 | 2012-02-15 | Crocus Technology | Magnetischer speicher mit wärmeunterstütztem schreibverfahren und niedrigem schreibstrom |
US8508221B2 (en) * | 2010-08-30 | 2013-08-13 | Everspin Technologies, Inc. | Two-axis magnetic field sensor having reduced compensation angle for zero offset |
JP2013016587A (ja) * | 2011-07-01 | 2013-01-24 | Toshiba Corp | 磁気抵抗効果素子及びその製造方法 |
US20140284733A1 (en) * | 2013-03-22 | 2014-09-25 | Daisuke Watanabe | Magnetoresistive element |
US9324457B2 (en) | 2014-03-12 | 2016-04-26 | Kabushiki Kaisha Toshiba | Nonvolatile memory |
US9747966B2 (en) * | 2015-08-25 | 2017-08-29 | Toshiba Memory Corporation | Semiconductor memory device for sensing memory cell with variable resistance |
-
2018
- 2018-02-07 US US15/891,233 patent/US10460779B2/en active Active
- 2018-02-07 JP JP2019542530A patent/JP2020509581A/ja active Pending
- 2018-02-07 WO PCT/US2018/017288 patent/WO2018148327A1/en unknown
- 2018-02-07 EP EP18750830.4A patent/EP3580758A4/en active Pending
-
2022
- 2022-01-12 JP JP2022003025A patent/JP2022036234A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017665A (ja) * | 2001-04-26 | 2003-01-17 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
JP2003085966A (ja) * | 2001-09-07 | 2003-03-20 | Canon Inc | 磁気メモリ装置の読み出し回路 |
JP2004103125A (ja) * | 2002-09-10 | 2004-04-02 | Toshiba Corp | 磁気ランダムアクセスメモリ |
JP2007235051A (ja) * | 2006-03-03 | 2007-09-13 | Ricoh Co Ltd | 磁気抵抗効果素子、磁気抵抗効果素子の基板および磁気抵抗効果素子の製造方法 |
JP2009004440A (ja) * | 2007-06-19 | 2009-01-08 | Toshiba Corp | 磁気ランダムアクセスメモリ |
Also Published As
Publication number | Publication date |
---|---|
JP2022036234A (ja) | 2022-03-04 |
WO2018148327A1 (en) | 2018-08-16 |
EP3580758A1 (en) | 2019-12-18 |
US20180226112A1 (en) | 2018-08-09 |
US10460779B2 (en) | 2019-10-29 |
EP3580758A4 (en) | 2020-11-25 |
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