ATE544153T1 - Magnetischer speicher mit wärmeunterstütztem schreibverfahren und niedrigem schreibstrom - Google Patents
Magnetischer speicher mit wärmeunterstütztem schreibverfahren und niedrigem schreibstromInfo
- Publication number
- ATE544153T1 ATE544153T1 AT09290340T AT09290340T ATE544153T1 AT E544153 T1 ATE544153 T1 AT E544153T1 AT 09290340 T AT09290340 T AT 09290340T AT 09290340 T AT09290340 T AT 09290340T AT E544153 T1 ATE544153 T1 AT E544153T1
- Authority
- AT
- Austria
- Prior art keywords
- ferromagnetic
- layer
- tunnel junction
- write current
- magnetic tunnel
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09290340A EP2249350B1 (de) | 2009-05-08 | 2009-05-08 | Magnetischer Speicher mit wärmeunterstütztem Schreibverfahren und niedrigem Schreibstrom |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE544153T1 true ATE544153T1 (de) | 2012-02-15 |
Family
ID=41226828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT09290340T ATE544153T1 (de) | 2009-05-08 | 2009-05-08 | Magnetischer speicher mit wärmeunterstütztem schreibverfahren und niedrigem schreibstrom |
Country Status (4)
Country | Link |
---|---|
US (1) | US8385107B2 (de) |
EP (1) | EP2249350B1 (de) |
JP (1) | JP5653650B2 (de) |
AT (1) | ATE544153T1 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2447948B1 (de) * | 2010-10-26 | 2014-12-31 | Crocus Technology S.A. | Thermisch gestütztes magnetisches Direktzugriffspeicherelement mit verbesserter Dauerhaftigkeit |
CN103299370B (zh) * | 2010-11-17 | 2016-01-20 | 纽约大学 | 双极性自旋转移切换 |
EP2466586B1 (de) * | 2010-12-16 | 2016-03-02 | Crocus Technology | Magnetische Multibit-Direktzugriffsspeicherzelle mit verbessertem Lesebereich |
EP2479759A1 (de) | 2011-01-19 | 2012-07-25 | Crocus Technology S.A. | Stromsparende Magnetdirektzugriffsspeicherzelle |
US8472240B2 (en) | 2011-05-16 | 2013-06-25 | Micron Technology, Inc. | Spin torque transfer memory cell structures and methods |
US8611141B2 (en) * | 2011-09-21 | 2013-12-17 | Crocus Technology Inc. | Magnetic random access memory devices including heating straps |
US8611140B2 (en) | 2011-09-21 | 2013-12-17 | Crocus Technology Inc. | Magnetic random access memory devices including shared heating straps |
EP2608208B1 (de) * | 2011-12-22 | 2015-02-11 | Crocus Technology S.A. | Selbstbezogene MRAM-Zelle und Verfahren zum Beschreiben der Zelle unter Verwendung eines SST-Vorgangs |
EP2615610B1 (de) * | 2012-01-16 | 2016-11-02 | Crocus Technology S.A. | MRAM-Zelle und Verfahren zum Beschreiben einer MRAM-Zelle unter Verwendung einer wärmeunterstützten Schreiboperation mit reduziertem Feldstrom |
US9007818B2 (en) | 2012-03-22 | 2015-04-14 | Micron Technology, Inc. | Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication |
FR2989211B1 (fr) * | 2012-04-10 | 2014-09-26 | Commissariat Energie Atomique | Dispositif magnetique a ecriture assistee thermiquement |
EP2672488B1 (de) | 2012-06-08 | 2015-08-19 | Crocus Technology S.A. | MRAM-Element mit verbesserter Datenspeicherung und geringer Schreibtemperatur |
US9054030B2 (en) | 2012-06-19 | 2015-06-09 | Micron Technology, Inc. | Memory cells, semiconductor device structures, memory systems, and methods of fabrication |
US8923038B2 (en) | 2012-06-19 | 2014-12-30 | Micron Technology, Inc. | Memory cells, semiconductor device structures, memory systems, and methods of fabrication |
US8913422B2 (en) * | 2012-09-28 | 2014-12-16 | Intel Corporation | Decreased switching current in spin-transfer torque memory |
US8947915B2 (en) * | 2012-12-17 | 2015-02-03 | International Business Machines Corporation | Thermal spin torqure transfer magnetoresistive random access memory |
US9379315B2 (en) | 2013-03-12 | 2016-06-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, semiconductor device structures, and memory systems |
US8971103B2 (en) * | 2013-03-13 | 2015-03-03 | International Business Machines Corporation | Thermally-assisted MRAM with ferromagnetic layers with temperature dependent magnetization |
US9070868B2 (en) | 2013-06-04 | 2015-06-30 | International Business Machines Corporation | Thermally assisted MRAM with a multilayer encapsulant for low thermal conductivity |
US9368714B2 (en) | 2013-07-01 | 2016-06-14 | Micron Technology, Inc. | Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems |
US9466787B2 (en) | 2013-07-23 | 2016-10-11 | Micron Technology, Inc. | Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems |
US9461242B2 (en) | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
US9460397B2 (en) | 2013-10-04 | 2016-10-04 | Samsung Electronics Co., Ltd. | Quantum computing device spin transfer torque magnetic memory |
US10454024B2 (en) | 2014-02-28 | 2019-10-22 | Micron Technology, Inc. | Memory cells, methods of fabrication, and memory devices |
US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
US9269888B2 (en) | 2014-04-18 | 2016-02-23 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
US9331123B2 (en) * | 2014-05-09 | 2016-05-03 | Tower Semiconductor Ltd. | Logic unit including magnetic tunnel junction elements having two different anti-ferromagnetic layers |
US9330748B2 (en) | 2014-05-09 | 2016-05-03 | Tower Semiconductor Ltd. | High-speed compare operation using magnetic tunnel junction elements including two different anti-ferromagnetic layers |
US9524765B2 (en) * | 2014-08-15 | 2016-12-20 | Qualcomm Incorporated | Differential magnetic tunnel junction pair including a sense layer with a high coercivity portion |
US9349945B2 (en) | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
US9768377B2 (en) | 2014-12-02 | 2017-09-19 | Micron Technology, Inc. | Magnetic cell structures, and methods of fabrication |
US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
US10490247B2 (en) | 2015-07-24 | 2019-11-26 | The University Of Tokyo | Memory element |
JP2018026421A (ja) | 2016-08-09 | 2018-02-15 | 株式会社東芝 | 磁気記憶装置 |
US9734885B1 (en) | 2016-10-12 | 2017-08-15 | International Business Machines Corporation | Thermal-aware memory |
WO2018106212A1 (en) * | 2016-12-05 | 2018-06-14 | Intel Corporation | Quaternary spin hall memory |
US10163502B2 (en) * | 2016-12-30 | 2018-12-25 | Intel Corporation | Selective performance level modes of operation in a non-volatile memory |
WO2018148327A1 (en) | 2017-02-08 | 2018-08-16 | Crocus Technology Inc. | Mram reference cell with shape anisotropy to establish a well-defined magnetization orientation |
US9911483B1 (en) | 2017-03-21 | 2018-03-06 | International Business Machines Corporation | Thermally-assisted spin transfer torque memory with improved bit error rate performance |
CN112186097B (zh) * | 2019-07-01 | 2023-10-27 | 上海磁宇信息科技有限公司 | 一种优化磁性随机存储器写性能的结构及其制备方法 |
CN114496013B (zh) * | 2022-02-15 | 2024-07-16 | 西安交通大学 | 自旋随机存储器存内计算装置和存内计算方法及电子设备 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3820475C1 (de) | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
US5159513A (en) | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5343422A (en) | 1993-02-23 | 1994-08-30 | International Business Machines Corporation | Nonvolatile magnetoresistive storage device using spin valve effect |
US5583725A (en) | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
US5695864A (en) | 1995-09-28 | 1997-12-09 | International Business Machines Corporation | Electronic device using magnetic components |
US6172902B1 (en) | 1998-08-12 | 2001-01-09 | Ecole Polytechnique Federale De Lausanne (Epfl) | Non-volatile magnetic random access memory |
FR2817999B1 (fr) | 2000-12-07 | 2003-01-10 | Commissariat Energie Atomique | Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif |
FR2829868A1 (fr) | 2001-09-20 | 2003-03-21 | Centre Nat Rech Scient | Memoire magnetique a ecriture par courant polarise en spin, mettant en oeuvre des alliages amorphes ferrimagnetiques et procede pour son ecriture |
FR2832542B1 (fr) | 2001-11-16 | 2005-05-06 | Commissariat Energie Atomique | Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif |
US6980469B2 (en) * | 2003-08-19 | 2005-12-27 | New York University | High speed low power magnetic devices based on current induced spin-momentum transfer |
US7110287B2 (en) * | 2004-02-13 | 2006-09-19 | Grandis, Inc. | Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer |
FR2866750B1 (fr) * | 2004-02-23 | 2006-04-21 | Centre Nat Rech Scient | Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture |
US6992359B2 (en) * | 2004-02-26 | 2006-01-31 | Grandis, Inc. | Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
WO2006054588A1 (ja) * | 2004-11-16 | 2006-05-26 | Nec Corporation | 磁気メモリ及び,その製造方法 |
TWI283477B (en) * | 2004-11-16 | 2007-07-01 | Ind Tech Res Inst | Magnetic random access memory with lower switching field |
US7502253B2 (en) * | 2006-08-28 | 2009-03-10 | Everspin Technologies, Inc. | Spin-transfer based MRAM with reduced critical current density |
TWI449040B (zh) * | 2006-10-06 | 2014-08-11 | Crocus Technology Sa | 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法 |
JP4380707B2 (ja) * | 2007-01-19 | 2009-12-09 | ソニー株式会社 | 記憶素子 |
-
2009
- 2009-05-08 EP EP09290340A patent/EP2249350B1/de active Active
- 2009-05-08 AT AT09290340T patent/ATE544153T1/de active
-
2010
- 2010-05-04 US US12/773,318 patent/US8385107B2/en active Active
- 2010-05-07 JP JP2010107161A patent/JP5653650B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20110110151A1 (en) | 2011-05-12 |
EP2249350B1 (de) | 2012-02-01 |
JP2010263221A (ja) | 2010-11-18 |
US8385107B2 (en) | 2013-02-26 |
JP5653650B2 (ja) | 2015-01-14 |
EP2249350A1 (de) | 2010-11-10 |
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