JP2020150274A - 発光デバイスを支持基板に取り付ける方法 - Google Patents
発光デバイスを支持基板に取り付ける方法 Download PDFInfo
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- JP2020150274A JP2020150274A JP2020095270A JP2020095270A JP2020150274A JP 2020150274 A JP2020150274 A JP 2020150274A JP 2020095270 A JP2020095270 A JP 2020095270A JP 2020095270 A JP2020095270 A JP 2020095270A JP 2020150274 A JP2020150274 A JP 2020150274A
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Abstract
Description
(付記1) n型領域とp型領域との間に挟まれた発光体層を各々有する半導体発光デバイスのウェハーを提供することと、
ボディを各々有する支持基板のウェハーを提供することと、
前記半導体発光デバイスのウェハーを前記支持基板のウェハーに、前記支持基板のウェハー全体にわたって平坦である接合層を介して接合することと、
前記半導体発光デバイスのウェハーを前記支持基板のウェハーに接合後、前記半導体発光デバイスのウェハーの前記接合層に接合する部分の一部が露出するよう、各前記支持基板の前記ボディの全体の厚さ及び前記接合層の全体の厚さを貫通して延在するビアを形成することとを含む、方法。
(付記2) 前記半導体発光デバイスのウェハーを前記支持基板のウェハーに接合することは、少なくとも一つの前記接合層を介して接合することを含む、付記1に記載の方法。
(付記3) 前記少なくとも一つの接合層は、誘電領域によって分離された金属領域を含み、前記金属領域及び誘電領域は、各前記支持基板の前記ボディの上面上に形成される、付記2に記載の方法。
(付記4) 前記少なくとも一つの接合層は、前記半導体発光デバイスのウェハー上に形成されたポリマー層を含む、付記2に記載の方法。
(付記5) 前記少なくとも一つの接合層は、前記半導体発光デバイスのウェハー上に形成された有機接着剤を含む、付記2に記載の方法。
(付記6) 前記少なくとも一つの接合層は、前記半導体発光デバイスのウェハー上に形成された第一誘電性接合層と、前記支持基板のウェハー上に形成された第二誘電性接合層とを含む、付記2に記載の方法。
(付記7) 前記第一誘電性接合層及び前記第二誘電性接合層は、ケイ素酸化物を含む、付記6に記載の方法。
(付記8) 各前記支持基板の前記ボディは、Si、GaAs、及びGeのうちの一つを含む、付記1に記載の方法。
(付記9) 各前記支持基板の前記ボディの全体の厚さを貫通して延在するビアを形成することは、各前記支持基板の前記ボディの全体の厚さを貫通するビアをエッチングして、少なくとも一つの金属領域を露出させることを含む、付記1に記載の方法。
(付記10) 前記金属領域は、前記支持基板のウェハー上に形成された金属接合層である、付記9に記載の方法。
(付記11) 前記金属領域は、前記半導体発光デバイスのウェハー上に形成され、前記n型領域及び前記p型領域のうちの一方に電気的に接続される金属コンタクトである、付記9に記載の方法。
(付記12) 前記半導体発光デバイスのウェハーを前記支持基板のウェハーに接合後、前記半導体発光デバイスのウェハーを個々の発光デバイスチップにダイシングすることをさらに含む、付記1に記載の方法。
(付記13) 前記半導体発光デバイスのウェハーをダイシングする前に、前記半導体発光デバイスのウェハーから成長基板を除去することをさらに含む、付記12に記載の方法。
(付記14) 前記成長基板を除去することによって露出された前記半導体発光デバイスのウェハーの表面を粗面化することをさらに含み、前記粗面化は、前記半導体発光デバイスのウェハーをダイシングする前に実施される、請求項13に記載の方法。
(付記15) 前記半導体発光デバイスのウェハーをダイシングする前に、前記半導体発光デバイスのウェハー上に波長変換層を配置することをさらに含む、付記12に記載の方法。
Claims (16)
- 発光デバイスであって:
支持基板と;
少なくともn型領域、p型領域、及び活性領域を含むとともに、前記支持基板の幅と等しい幅を有する、半導体構造体と;
前記n型領域上のn型コンタクトであって、前記n型領域の端部から後退されている金属層を有する、n型コンタクトと;
前記半導体構造体と前記支持基板との間の平坦な接合層と;
前記支持基板を通って且つ前記半導体構造体の一部が露出されるように前記平坦な接合層を通って延びる前記支持基板のビアと;
を有する、
発光デバイス。 - 前記半導体構造体はさらに、前記n型領域の前記端部に反射性誘電体層を有する、
請求項1に記載の発光デバイス。 - 前記反射性誘電体層は、前記n型領域の前記端部の上に広がり且つ前記n型領域の側壁を覆う、
請求項2に記載の発光デバイス。 - 前記反射性誘電体層は、反射性誘電体スタックである、
請求項2に記載の発光デバイス。 - 前記反射性誘電体層上にポリマー層をさらに有する、
請求項2に記載の発光デバイス。 - 前記ポリマー層は、光吸収材料でドープされる、
請求項5に記載の発光デバイス。 - 前記ポリマー層は、光散乱材料でドープされる、
請求項5に記載の発光デバイス。 - 前記ビアの側壁にパッシベーション層をさらに有する、
請求項1に記載の発光デバイス。 - 前記ビアは、角度を付けられた側壁を有する、
請求項1に記載の発光デバイス。 - 前記ビアの側壁に配置される誘電体層をさらに有し、前記誘電体層は前記ビアの端部で金属層を露出させるようにパターン化される、
請求項1に記載の発光デバイス。 - 前記誘電体層上の前記ビアに配置された金属をさらに有する、
請求項10に記載の発光デバイス。 - 前記金属は、前記ビアの外側の前記支持基板の表面上にあり、前記支持基板の前記表面上に配置された前記金属は1μmから20μmの間の厚さである、
請求項11に記載の発光デバイス。 - 前記金属は前記ビアを充填する、
請求項11に記載の発光デバイス。 - 前記金属は前記ビアを完全に充填しない、
請求項11に記載の発光デバイス。 - 前記n型コンタクトの前記金属層は金属のスタックである、
請求項1に記載の発光デバイス。 - 前記n型コンタクトは、前記n型領域の前記端部を覆わない、
請求項1に記載の発光デバイス。
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EP2715814A1 (en) | 2014-04-09 |
JP2014515559A (ja) | 2014-06-30 |
WO2012164431A1 (en) | 2012-12-06 |
KR20140038481A (ko) | 2014-03-28 |
KR20190002719A (ko) | 2019-01-08 |
EP2715814B1 (en) | 2018-07-11 |
CN103582958A (zh) | 2014-02-12 |
US9153758B2 (en) | 2015-10-06 |
US9705047B2 (en) | 2017-07-11 |
JP2018014521A (ja) | 2018-01-25 |
JP6712579B2 (ja) | 2020-06-24 |
TW201251146A (en) | 2012-12-16 |
KR102048905B1 (ko) | 2019-11-27 |
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