JP2020147831A - Electroplating apparatus and electroplating method - Google Patents

Electroplating apparatus and electroplating method Download PDF

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JP2020147831A
JP2020147831A JP2019048661A JP2019048661A JP2020147831A JP 2020147831 A JP2020147831 A JP 2020147831A JP 2019048661 A JP2019048661 A JP 2019048661A JP 2019048661 A JP2019048661 A JP 2019048661A JP 2020147831 A JP2020147831 A JP 2020147831A
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plated
plating
shielding plate
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substrate
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俊輔 川合
Shunsuke Kawai
俊輔 川合
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Mitsubishi Materials Corp
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Abstract

To provide an electroplating apparatus and an electroplating method that can suppress a current convergence to a width-direction end part of a to-be-plated material, make a plating solution flow sufficiently on a surface of the to-be-plated material, and stably form a plating layer with uniform thickness.SOLUTION: An electroplating apparatus 10 for forming a plating layer on a surface of a to-be-plated material 3 comprises: a plating treatment tank 11 for storing a plating solution; an anode 1 arranged in the plating treatment tank 11; and a to-be-plated material support part for arranging the to-be-plated material 3 so as to face the anode 1 in the plating treatment tank 11. The to-be-plated material support part has an oscillation mechanism for oscillating the to-be-plated material 3 at a position opposite to the anode 1. Movable shield plates 16 and 16 are arranged on both sides of the to-be-plated material 3 in between the anode 1 and the to-be-plated material 3. The movable shield plate 16 oscillates in synchronization with the to-be-plated material 3.SELECTED DRAWING: Figure 4

Description

本発明は、例えばプリント基板や半導体基板等の被めっき材の表面にめっき層を形成する際に用いられる電解めっき装置、及び、電解めっき方法に関するものである。 The present invention relates to an electroplating apparatus used for forming a plating layer on the surface of a material to be plated such as a printed circuit board or a semiconductor substrate, and an electroplating method.

一般に、上述の電解めっき装置としては、めっき液が貯留されためっき処理槽内に、アノードが配設されるとともに、基板等の被めっき材が前記アノードに対向するように配置され、これらアノード及び被めっき材に給電されることにより、被めっき材の表面にめっき層が形成される構成とされている。
ここで、上述の電解めっき装置においては、アノードからの電流線が基板の幅方向両端部に回り込んで電流集中が生じてしまい、被めっき材の幅方向両端部に形成されるめっき層の厚さが厚くなり、均一な厚さのめっき層を形成できなかった。このため、めっき層の厚さ分布ムラが生じ、さらにはめっきの光沢ムラやめっき焼けが生じることがあった。 Generally, in the above-mentioned electrolytic plating apparatus, an anode is arranged in a plating treatment tank in which a plating solution is stored, and a material to be plated such as a substrate is arranged so as to face the anode. A plating layer is formed on the surface of the material to be plated by supplying power to the material to be plated.
Here, in the above-mentioned electrolytic plating apparatus, the current line from the anode wraps around both ends in the width direction of the substrate to cause current concentration, and the thickness of the plating layer formed on both ends in the width direction of the material to be plated. The thickness became thicker, and a plating layer having a uniform thickness could not be formed. For this reason, uneven thickness distribution of the plating layer may occur, and further, uneven gloss of the plating and burning of the plating may occur.

そこで、従来、基板等の被めっき材の幅方向端部に電流線が回り込むことを抑制する各種手段が提案されている。
例えば特許文献１には、被めっき材の幅方向両側にＶ形状フレームを配置し、基板及びＶ形状フレームを、アノードが配設されためっき層内で搬送することで、めっき層を形成する構成としたものが提案されている。
また、特許文献２には、アノードと被めっき材との間に、主遮蔽板と従遮蔽板とを配設し、これら主遮蔽板と従遮蔽板によって、電流線の遮蔽パターンを変更する構成とされている。 Therefore, conventionally, various means for suppressing the current line from wrapping around the widthwise end portion of the material to be plated such as a substrate have been proposed.
For example, in Patent Document 1, V-shaped frames are arranged on both sides in the width direction of the material to be plated, and the substrate and the V-shaped frame are conveyed in the plating layer on which the anode is arranged to form a plating layer. Is proposed.
Further, in Patent Document 2, a main shielding plate and a secondary shielding plate are arranged between the anode and the material to be plated, and the shielding pattern of the current line is changed by these main shielding plate and the secondary shielding plate. It is said that.

特開２００５−０４２１７０号公報JP-A-2005-042170 特開２００９−２９３１１４号公報Japanese Unexamined Patent Publication No. 2009-293114

ところで、特許文献１においては、被めっき材の幅方向両側にＶ形状フレームを配設していることから、被めっき材の表面におけるめっき液の流動が阻害されてしまい、めっき層を安定して形成することができないおそれがあった。
また、特許文献２においては、主遮蔽板と従遮蔽板は、これらの相対位置を調整した後は固定されるため、被めっき材を搬送した際には、被めっき材の幅方向端部に電流線が回り込むことを抑制することができず、厚さの均一なめっき層を安定して形成することができないおそれがあった。 By the way, in Patent Document 1, since V-shaped frames are arranged on both sides of the material to be plated in the width direction, the flow of the plating solution on the surface of the material to be plated is hindered and the plating layer is stabilized. There was a risk that it could not be formed.
Further, in Patent Document 2, since the main shielding plate and the secondary shielding plate are fixed after adjusting their relative positions, when the material to be plated is conveyed, the plate to be plated is placed at the end portion in the width direction of the material to be plated. It was not possible to prevent the current line from wrapping around, and there was a risk that a plating layer with a uniform thickness could not be formed stably.

この発明は、前述した事情に鑑みてなされたものであって、被めっき材の幅方向端部への電流集中を抑制するとともに、被めっき材の表面においてめっき液を十分に流動させることができ、厚さの均一なめっき層を安定して形成することが可能な電解めっき装置、及び、電解めっき方法を提供することを目的とする。 The present invention has been made in view of the above-mentioned circumstances, and can suppress the concentration of current on the widthwise end portion of the material to be plated and allow the plating solution to sufficiently flow on the surface of the material to be plated. An object of the present invention is to provide an electrolytic plating apparatus capable of stably forming a plating layer having a uniform thickness, and an electrolytic plating method.

上記の課題を解決するために、本発明の電解めっき装置は、被めっき材の表面にめっき層を形成する電解めっき装置であって、めっき液が貯留されるめっき処理槽と、前記めっき処理槽内に配置されたアノードと、前記めっき処理槽内において前記被めっき材を前記アノードに対向して配置する被めっき材支持部と、を有し、前記被めっき材支持部は、前記被めっき材を前記アノードに対向した位置で揺動させる揺動機構を有しており、前記アノードと前記被めっき材との間において、前記被めっき材の両端側にはそれぞれ移動式遮蔽板が配設されており、前記移動式遮蔽板は、前記被めっき材に同期して揺動する構成とされていることを特徴としている。 In order to solve the above problems, the electrolytic plating apparatus of the present invention is an electrolytic plating apparatus that forms a plating layer on the surface of a material to be plated, and includes a plating treatment tank in which a plating solution is stored and the plating treatment tank. It has an anode arranged inside and a material to be plated support portion for arranging the material to be plated facing the anode in the plating treatment tank, and the material to be plated is the material to be plated. Has a swinging mechanism that swings the sword at a position facing the anode, and mobile shielding plates are provided on both ends of the material to be plated between the anode and the material to be plated. The mobile shielding plate is characterized in that it swings in synchronization with the material to be plated.

この構成の電解めっき装置によれば、前記被めっき材支持部が、前記被めっき材を前記アノードに対向した位置で揺動させる揺動機構を有しているので、被めっき材を揺動させることにより、めっき液の攪拌を行うことができ、被めっき材の表面においてめっき液を十分に流動させることが可能となる。
そして、前記アノードと前記被めっき材との間において、前記被めっき材の両端側にはそれぞれ移動式遮蔽板が配設されており、前記移動式遮蔽板が前記被めっき材に同期して揺動する構成とされているので、被めっき材を揺動させても移動式遮蔽板と被めっき材との相対位置を維持することができ、移動式遮蔽板によって、被めっき材の幅方向端部に電流線が回り込むことを抑制することができる。
よって、被めっき材の表面に、厚さの均一なめっき層を安定して形成することが可能となる。 According to the electrolytic plating apparatus having this configuration, the support portion of the material to be plated has a swing mechanism for swinging the material to be plated at a position facing the anode, so that the material to be plated is shaken. As a result, the plating solution can be agitated, and the plating solution can be sufficiently flowed on the surface of the material to be plated.
A mobile shielding plate is disposed between the anode and the material to be plated on both ends of the material to be plated, and the mobile shielding plate shakes in synchronization with the material to be plated. Since it is configured to move, the relative position between the mobile shielding plate and the material to be plated can be maintained even if the material to be plated is shaken, and the movable shielding plate allows the edge in the width direction of the material to be plated. It is possible to prevent the current line from wrapping around the portion.
Therefore, it is possible to stably form a plating layer having a uniform thickness on the surface of the material to be plated.

ここで、本発明の電解めっき装置においては、前記アノードと前記被めっき材との間に、前記移動式遮蔽板に加えて、開口部を有する固定式遮蔽板が配置されていてもよい。
この場合、固定式遮蔽板が配置されているので、被めっき材と同期して揺動する移動式遮蔽板のサイズを小さくしても、電流線の回り込みを抑制することが可能となる。よって、移動式遮蔽板を安定して被めっき材と同期して揺動させることができ、被めっき材の幅方向端部に電流線が回り込むことを確実に抑制することができる。また、揺動機構を簡略化することが可能となる。 Here, in the electrolytic plating apparatus of the present invention, in addition to the mobile shielding plate, a fixed shielding plate having an opening may be arranged between the anode and the material to be plated.
In this case, since the fixed shield plate is arranged, it is possible to suppress the wraparound of the current line even if the size of the mobile shield plate that swings in synchronization with the material to be plated is reduced. Therefore, the mobile shielding plate can be stably swung in synchronization with the material to be plated, and it is possible to reliably suppress the current line from wrapping around the end portion in the width direction of the material to be plated. In addition, the swing mechanism can be simplified.

また、本発明の電解めっき装置においては、前記アノードに対向して配置された前記被めっき材に対して、前記めっき液を噴射する噴流手段が設けられている構成としてもよい。
この場合、前記めっき液を噴射する噴流手段によって、めっき液が十分に攪拌されることになり、被めっき材の表面においてめっき液をさらに十分に流動させることができ、厚さの均一なめっき層をさらに安定して形成することが可能となる。 Further, the electrolytic plating apparatus of the present invention may be configured to be provided with a jet means for injecting the plating solution onto the material to be plated, which is arranged so as to face the anode.
In this case, the plating solution is sufficiently agitated by the jet means for injecting the plating solution, the plating solution can be further sufficiently flowed on the surface of the material to be plated, and the plating layer having a uniform thickness. Can be formed more stably.

本発明の電解めっき方法は、被めっき材の表面にめっき層を形成する電解めっき方法であって、上述の電解めっき装置を用いて、前記被めっき材の揺動によって前記めっき液を前記被めっき材の表面に流動させるとともに、前記移動式遮蔽板によって前記被めっき材の両端部への電流集中を抑制することにより、前記被めっき材の表面に前記めっき層を形成することを特徴としている。 The electrolytic plating method of the present invention is an electrolytic plating method in which a plating layer is formed on the surface of a material to be plated, and the plating solution is plated by shaking the material to be plated by using the above-mentioned electrolytic plating apparatus. It is characterized in that the plating layer is formed on the surface of the material to be plated by flowing it on the surface of the material and suppressing the concentration of current on both ends of the material to be plated by the mobile shielding plate.

この構成の電解めっき方法によれば、前記被めっき材の揺動によって前記めっき液を前記被めっき材の表面に流動させるとともに、前記移動式遮蔽板によって前記被めっき材の両端部への電流集中を抑制する構成とされているので、被めっき材の表面に、厚さの均一なめっき層を安定して形成することが可能となる。 According to the electrolytic plating method having this configuration, the plating solution is made to flow on the surface of the material to be plated by the shaking of the material to be plated, and the current is concentrated on both ends of the material to be plated by the mobile shielding plate. Since it is configured to suppress the above, it is possible to stably form a plating layer having a uniform thickness on the surface of the material to be plated.

本発明によれば、被めっき材の幅方向端部への電流集中を抑制するとともに、被めっき材の表面においてめっき液を十分に流動させることができ、厚さの均一なめっき層を安定して形成することが可能な電解めっき装置、及び、電解めっき方法を提供することができる。 According to the present invention, the current concentration on the widthwise end of the material to be plated can be suppressed, and the plating solution can be sufficiently flowed on the surface of the material to be plated, thereby stabilizing the plating layer having a uniform thickness. It is possible to provide an electrolytic plating apparatus and an electrolytic plating method that can be formed.

本発明の一実施形態に係る電解めっき装置の概略図である。It is the schematic of the electrolytic plating apparatus which concerns on one Embodiment of this invention. 図１の電解めっき装置における基板支持部の正面説明図である。It is a front explanatory view of the substrate support part in the electrolytic plating apparatus of FIG. 図１の電解めっき装置における基板支持部の側面説明図である。It is a side side explanatory view of the substrate support part in the electrolytic plating apparatus of FIG. アノードと基板と移動式遮蔽板の位置関係を示す説明図である。It is explanatory drawing which shows the positional relationship of an anode, a substrate, and a mobile shielding plate. 本発明の他の実施形態に係る電解めっき装置におけるアノードと基板と移動式遮蔽板の位置関係を示す説明図である。It is explanatory drawing which shows the positional relationship of the anode, the substrate, and the mobile shielding plate in the electrolytic plating apparatus which concerns on another Embodiment of this invention.

以下に、本発明の実施形態である電解めっき装置、及び、電解めっき方法について、添付した図面を参照して説明する。
なお、本実施形態においては、被めっき材として、プリント基板や角型半導体基板等の平板形状の基板を用いており、この基板の表面に、Ｃｕ、Ｎｉ、Ｓｎ等の各種金属のめっき層を形成するものとされている。 The electrolytic plating apparatus and the electrolytic plating method according to the embodiment of the present invention will be described below with reference to the attached drawings.
In this embodiment, a flat plate-shaped substrate such as a printed circuit board or a square semiconductor substrate is used as the material to be plated, and plating layers of various metals such as Cu, Ni, and Sn are applied to the surface of this substrate. It is supposed to form.

本実施形態である電解めっき装置１０は、図１に示すように、めっき液が貯留されるめっき処理槽１１と、このめっき処理槽１１内に配置されたアノード１と、めっき処理槽１１内において、基板３（被めっき材）をアノード１に対向して配置する基板支持部２０と、を有している。 As shown in FIG. 1, the electrolytic plating apparatus 10 of the present embodiment has a plating treatment tank 11 in which a plating solution is stored, an anode 1 arranged in the plating treatment tank 11, and a plating treatment tank 11. A substrate support portion 20 for arranging the substrate 3 (material to be plated) facing the anode 1 is provided.

めっき処理槽１１は、図１に示すように、断面矩形状の箱型をなしており、長手方向の一端の上面側に、めっき液の排出口１２が設けられている。また、めっき処理槽１１の底部には、めっき液を噴出する底部噴流パイプ１３が配設されている。
アノード１は、めっき処理槽１１の長辺壁に沿って配設されており、基板支持部２０は、このアノード１に対向するように基板３を配置する構成とされている。よって、アノード１及び基板３の幅方向が、めっき処理槽１１の長手方向に一致することになる。 As shown in FIG. 1, the plating treatment tank 11 has a box shape having a rectangular cross section, and a plating solution discharge port 12 is provided on the upper surface side of one end in the longitudinal direction. Further, a bottom jet pipe 13 for ejecting a plating solution is arranged at the bottom of the plating treatment tank 11.
The anode 1 is arranged along the long side wall of the plating treatment tank 11, and the substrate support portion 20 is configured to arrange the substrate 3 so as to face the anode 1. Therefore, the width directions of the anode 1 and the substrate 3 coincide with the longitudinal direction of the plating treatment tank 11.

そして、図２及び図４に示すように、アノード１と基板３との間において、基板３の幅方向両端側にはそれぞれ移動式遮蔽板１６，１６が配設されている。
また、本実施形態においては、アノード１と基板３との間に、開口部を有する固定式遮蔽板１８が配置されており、上述の移動式遮蔽板１６は、固定式遮蔽板１８と基板３との間に配置されている。
さらに、本実施形態においては、図１に示すように、アノード１は、幅方向に分割した構造とされており、分割されたアノードの間には、基板３に対してめっき液を噴射する噴流手段１４がそれぞれ配置されている。 Then, as shown in FIGS. 2 and 4, mobile shielding plates 16 and 16 are arranged between the anode 1 and the substrate 3 on both ends in the width direction of the substrate 3, respectively.
Further, in the present embodiment, a fixed shielding plate 18 having an opening is arranged between the anode 1 and the substrate 3, and the mobile shielding plate 16 described above is the fixed shielding plate 18 and the substrate 3. It is placed between and.
Further, in the present embodiment, as shown in FIG. 1, the anode 1 has a structure divided in the width direction, and a jet flow for injecting a plating solution onto the substrate 3 between the divided anodes. Means 14 are arranged respectively.

本実施形態においては、基板支持部２０は、支持した基板３をアノード１の対向面に沿って（すなわち、アノード１及び基板３の幅方向に沿って）揺動させる揺動機構２１を有している。
そして、本実施形態である電解めっき装置１０においては、基板３の幅方向両端側に配設された移動式遮蔽板１６が、基板３の揺動に同期して揺動するように構成されている。 In the present embodiment, the substrate support portion 20 has a swing mechanism 21 that swings the supported substrate 3 along the facing surface of the anode 1 (that is, along the width direction of the anode 1 and the substrate 3). ing.
Then, in the electrolytic plating apparatus 10 of the present embodiment, the mobile shielding plates 16 arranged on both ends in the width direction of the substrate 3 are configured to swing in synchronization with the swing of the substrate 3. There is.

ここで、本実施形態における基板支持部２０を図２及び図３に示す。この基板支持部２０においては、支持した基板３の幅方向に延在するガイドバー２２を有し、このガイドバー２２に、基板３を固定する基板固定治具２４が吊り下げられている。また、このガイドバー２２には、移動式遮蔽板１６を固定する移動式遮蔽板固定治具２６が吊り下げられている。
そして、揺動機構２１は、ガイドバー２２に沿って基板固定治具２４を往復移動させるとともに、基板固定治具２４の往復移動に同期して、移動式遮蔽板固定治具２６をガイドバー２２に沿って往復移動させるように構成されている。
なお、図３に示すように、基板３と移動式遮蔽板１６との間に所定の隙間Ｇが生じるように、基板固定治具２４及び移動式遮蔽板固定治具２６が配設されている。 Here, the substrate support portion 20 in this embodiment is shown in FIGS. 2 and 3. The substrate support portion 20 has a guide bar 22 extending in the width direction of the supported substrate 3, and a substrate fixing jig 24 for fixing the substrate 3 is suspended from the guide bar 22. Further, a mobile shielding plate fixing jig 26 for fixing the mobile shielding plate 16 is suspended from the guide bar 22.
Then, the swing mechanism 21 reciprocates the board fixing jig 24 along the guide bar 22, and synchronizes with the reciprocating movement of the board fixing jig 24 to move the movable shielding plate fixing jig 26 to the guide bar 22. It is configured to move back and forth along.
As shown in FIG. 3, the substrate fixing jig 24 and the mobile shielding plate fixing jig 26 are arranged so that a predetermined gap G is generated between the substrate 3 and the mobile shielding plate 16. ..

ここで、図４に、上方から見た場合のアノード１と固定式遮蔽板１８と移動式遮蔽板１６と基板３との位置関係を示す。
図４に示すように、アノード１側から順に、固定式遮蔽板１８、移動式遮蔽板１６、基板３が、それぞれ所定の間隔をあけて配設されている。なお、本実施形態では、アノード１の幅Ｗ１は、固定式遮蔽板１８の開口部の幅Ｗ２よりも小さくされている。また、アノード１は幅方向に分割されているが、最も幅方向両側に位置するアノードの端部間距離をアノード１の幅Ｗ１とした。
そして、アノード１と固定式遮蔽板１８は固定されており、これらに対向する位置で、基板３及び移動式遮蔽板１６が幅方向に揺動することになる。 Here, FIG. 4 shows the positional relationship between the anode 1, the fixed shielding plate 18, the mobile shielding plate 16, and the substrate 3 when viewed from above.
As shown in FIG. 4, the fixed shielding plate 18, the mobile shielding plate 16, and the substrate 3 are arranged in order from the anode 1 side at predetermined intervals. In the present embodiment, the width W 1 of the anode 1 is smaller than the width W 2 of the opening of the fixed shielding plate 18. Although the anode 1 is divided in the width direction, and the anode end distance located most opposite widthwise sides as the width W 1 of the anode 1.
The anode 1 and the fixed shielding plate 18 are fixed, and the substrate 3 and the mobile shielding plate 16 swing in the width direction at positions facing them.

ここで、上述のように基板３と移動式遮蔽板１６との間には所定の隙間Ｇが形成されている。基板３の表面においてめっき液を十分に流動させるためには、この基板３と移動式遮蔽板１６との間の隙間Ｇを５ｍｍ以上とすることが好ましい。
一方、基板３の幅方向端部への電流線の回り込みを確実に抑制するためには、固定式遮蔽板１８と移動式遮蔽板１６との間の隙間Ｈを２０ｍｍ以下とすることが好ましい。 Here, as described above, a predetermined gap G is formed between the substrate 3 and the mobile shielding plate 16. In order for the plating solution to sufficiently flow on the surface of the substrate 3, the gap G between the substrate 3 and the mobile shielding plate 16 is preferably 5 mm or more.
On the other hand, in order to surely suppress the wraparound of the current line to the widthwise end of the substrate 3, it is preferable that the gap H between the fixed shielding plate 18 and the mobile shielding plate 16 is 20 mm or less.

また、移動式遮蔽板１６とめっき処理槽１１との干渉を抑制し、かつ、基板３の幅方向端部への電流線の回り込みを確実に抑制するためには、移動式遮蔽板１６の幅Ａを、めっき処理槽１１の幅Ｗ０、アノード１の幅Ｗ１、固定式遮蔽板１８の開口部幅Ｗ２、基板３の幅Ｗ３、基板３の揺動ストロークＳに対して、以下の式を満足するように構成することが好ましい。
０．５×｛ｍａｘ（Ｗ１，Ｗ２）−（Ｗ３−Ｓ）｝≦Ａ≦０．５×（Ｗ０−Ｗ３−Ｓ） Further, in order to suppress the interference between the mobile shielding plate 16 and the plating treatment tank 11 and to reliably suppress the wraparound of the current line to the widthwise end portion of the substrate 3, the width of the mobile shielding plate 16 the a, width W 0 of the plating tank 11, the width W 1 of the anode 1, the opening width W 2 of the stationary shield plate 18, the width W 3 of the substrate 3, against the swing stroke S of the substrate 3, the following It is preferable to construct so as to satisfy the equation of.
0.5 × {max (W 1 , W 2 ) − (W 3 −S)} ≦ A ≦ 0.5 × (W 0 −W 3 −S)

上述の構成の電解めっき装置１０においては、給電装置（図示なし）からアノード１と基板３とに給電することで、基板３の表面にめっき層が形成されることになる。このとき、基板３を幅方向に揺動させることによって、基板３の表面にめっき液を流動させる。また、基板３と同期にして揺動する移動式遮蔽板１６によって、基板３の幅方向両端部への電流集中を抑制する。 In the electrolytic plating apparatus 10 having the above-described configuration, a plating layer is formed on the surface of the substrate 3 by supplying power to the anode 1 and the substrate 3 from the feeding device (not shown). At this time, the plating solution is made to flow on the surface of the substrate 3 by swinging the substrate 3 in the width direction. Further, the mobile shielding plate 16 that swings in synchronization with the substrate 3 suppresses the current concentration on both ends of the substrate 3 in the width direction.

以上のような構成とされた本実施形態である電解めっき装置１０及び電解めっき方法によれば、基板支持部２０の揺動機構２１により、基板３がアノード１の対向面に沿って揺動させる構成とされているので、めっき液の攪拌を行うことができ、基板３の表面においてめっき液を十分に流動させることができる。 According to the electroplating apparatus 10 and the electroplating method of the present embodiment having the above-described configuration, the substrate 3 is oscillated along the facing surface of the anode 1 by the oscillating mechanism 21 of the substrate support portion 20. Since it is configured, the plating solution can be agitated, and the plating solution can be sufficiently flowed on the surface of the substrate 3.

そして、アノード１と基板３との間において、基板３の幅方向両端側にそれぞれ移動式遮蔽板１６が配設されており、この移動式遮蔽板１６が、基板３の揺動に同期して揺動する構成とされているので、基板３を幅方向に揺動させても、移動式遮蔽板１６と基板３との相対位置が維持され、基板３の幅方向端部に電流線が回り込むことを移動式遮蔽板１６によって抑制することができる。
よって、基板３の幅方向で厚さが均一なめっき層を安定して形成することができる。 A mobile shielding plate 16 is disposed between the anode 1 and the substrate 3 on both ends in the width direction of the substrate 3, and the mobile shielding plate 16 synchronizes with the swing of the substrate 3. Since it is configured to swing, even if the substrate 3 is shaken in the width direction, the relative position between the mobile shielding plate 16 and the substrate 3 is maintained, and the current line wraps around the widthwise end of the substrate 3. This can be suppressed by the mobile shielding plate 16.
Therefore, a plating layer having a uniform thickness in the width direction of the substrate 3 can be stably formed.

また、本実施形態においては、アノード１と基板３との間に、開口部を有する固定式遮蔽板１８が配置されており、移動式遮蔽板１６が、固定式遮蔽板１８と基板３との間に配置されているので、基板３と同期して揺動する移動式遮蔽板１６のサイズを小さくしても、基板３の幅方向端部への電流線の回り込みを抑制することが可能となる。よって、移動式遮蔽板１６を安定して基板３と同期して揺動させることができる。また、揺動機構を簡略化することが可能となる。 Further, in the present embodiment, the fixed shielding plate 18 having an opening is arranged between the anode 1 and the substrate 3, and the mobile shielding plate 16 is the fixed shielding plate 18 and the substrate 3. Since it is arranged between them, even if the size of the mobile shielding plate 16 that swings in synchronization with the substrate 3 is reduced, it is possible to suppress the wraparound of the current line to the widthwise end of the substrate 3. Become. Therefore, the mobile shielding plate 16 can be stably swung in synchronization with the substrate 3. In addition, the swing mechanism can be simplified.

さらに、本実施形態においては、アノード１が幅方向に分割した構造とされており、分割されたアノード間に、基板３に対してめっき液を噴射する噴流手段１４が配設されているので、めっき液が十分に攪拌されることになり、基板３の表面においてめっき液を十分に流動させることができ、厚さの均一なめっき層をさらに安定して形成することが可能となる。 Further, in the present embodiment, the anode 1 has a structure divided in the width direction, and the jet means 14 for injecting the plating solution onto the substrate 3 is arranged between the divided anodes. The plating solution is sufficiently agitated, the plating solution can be sufficiently flowed on the surface of the substrate 3, and a plating layer having a uniform thickness can be formed more stably.

以上、本発明の実施形態について説明したが、本発明はこれに限定されることはなく、その発明の技術的思想を逸脱しない範囲で適宜変更可能である。
例えば、本実施形態では、被めっき材として、プリント基板や角型半導体基板等の平板形状の基板を例に挙げて説明したが、これに限定されることはなく、他の被めっき材を対象としてもよい。 Although the embodiments of the present invention have been described above, the present invention is not limited to this, and can be appropriately changed without departing from the technical idea of the invention.
For example, in the present embodiment, as the material to be plated, a flat plate-shaped substrate such as a printed circuit board or a square semiconductor substrate has been described as an example, but the present invention is not limited to this, and other materials to be plated are targeted. May be.

また、本実施形態では、図１に示す構造のめっき処理槽にアノード及び基板を配設したものとして説明したが、これに限定されることはなく、アノードと基板とが対向して配置される構成であれば、めっき処理槽の構造に特に制限はない。
さらに、本実施形態では、図２及び図３に示す基板支持部を用いるものとして説明したが、これに限定されることはなく、基板と移動式遮蔽板とを同期して揺動することができる構造であれば、他の構成の基板支持部を適用してもよい。 Further, in the present embodiment, the anode and the substrate are arranged in the plating treatment tank having the structure shown in FIG. 1, but the present invention is not limited to this, and the anode and the substrate are arranged so as to face each other. As long as it has a configuration, the structure of the plating treatment tank is not particularly limited.
Further, in the present embodiment, the substrate support portion shown in FIGS. 2 and 3 has been described, but the present invention is not limited to this, and the substrate and the mobile shielding plate can swing in synchronization with each other. As long as the structure is possible, a substrate support portion having another configuration may be applied.

また、本実施形態では、図４に示すように、アノード１側から順に、固定式遮蔽板１８、移動式遮蔽板１６、基板３が、それぞれ所定の間隔をあけて配設されたものとして説明したが、これに限定されることはなく、図５に示すように、アノード１側から順に、移動式遮蔽板１６、固定式遮蔽板１８、基板３が、それぞれ所定の間隔をあけて配設されたものであってもよい。この場合、固定式遮蔽板１８と移動式遮蔽板１６との間の隙間Ｈを２０ｍｍ以下とした上で、基板３と固定式遮蔽板１８の隙間Ｆを５ｍｍ以上とすることが好ましい。 Further, in the present embodiment, as shown in FIG. 4, the fixed shielding plate 18, the mobile shielding plate 16, and the substrate 3 are respectively arranged at predetermined intervals in order from the anode 1 side. However, the present invention is not limited to this, and as shown in FIG. 5, the mobile shielding plate 16, the fixed shielding plate 18, and the substrate 3 are arranged at predetermined intervals in order from the anode 1 side. It may be the one that has been In this case, it is preferable that the gap H between the fixed shielding plate 18 and the mobile shielding plate 16 is 20 mm or less, and the gap F between the substrate 3 and the fixed shielding plate 18 is 5 mm or more.

以下に、前述した本発明の電解めっき装置、及び、電解めっき方法について評価した評価試験の結果について説明する。 The results of the evaluation test evaluating the electroplating apparatus of the present invention and the electroplating method described above will be described below.

（本発明例１）
上述の実施形態の欄に記載した電解めっき装置を用いて、電解めっきを実施した。ここで、基板として、幅４１０ｍｍ、高さ５１５ｍｍ、厚さ０．４ｍｍの銅箔付きガラスエポキシ樹脂板を用いた。また、めっき液３０には、メタンスルホン酸錫及びメタンスルホン酸の混合水溶液に、酸化防止剤としてのカテコール等を混合させたものを使用する。
そして、めっき処理槽の幅Ｗ０を８５５ｍｍ、アノードの幅Ｗ１を５６８ｍｍ、固定式遮蔽板の開口幅Ｗ２を５２０ｍｍ、移動式遮蔽板の幅Ａを１００ｍｍ、揺動ストロークＳを１８０ｍｍとして、電解錫めっきを実施し、目標厚さ４μｍのめっき層を形成した。 (Example 1 of the present invention)
Electroplating was performed using the electroplating apparatus described in the column of the above-described embodiment. Here, as a substrate, a glass epoxy resin plate with a copper foil having a width of 410 mm, a height of 515 mm, and a thickness of 0.4 mm was used. Further, as the plating solution 30, a mixed aqueous solution of tin methanesulfonic acid and methanesulfonic acid mixed with catechol or the like as an antioxidant is used.
The width W 0 of the plating tank is 855 mm, the width W 1 of the anode is 568 mm, the opening width W 2 of the fixed shielding plate is 520 mm, the width A of the mobile shielding plate is 100 mm, and the swing stroke S is 180 mm. Electrolytic tin plating was carried out to form a plating layer having a target thickness of 4 μm.

（本発明例２）
上述の本発明例１の電解めっき装置において、固定式遮蔽板を取り除き、その他の条件は本発明例１と同等として、電解めっきを実施した。 (Example 2 of the present invention)
In the above-mentioned electrolytic plating apparatus of Example 1 of the present invention, the fixed shielding plate was removed, and other conditions were the same as those of Example 1 of the present invention, and electrolytic plating was performed.

（本発明例３）
上述の本発明例１の電解めっき装置において、固定式遮蔽板と移動式遮蔽板の位置を入れ替え、アノード、移動式遮蔽板、固定式遮蔽板、基板という順番で配設とし、その他の条件は本発明例１と同等として、電解めっきを実施した。 (Example 3 of the present invention)
In the above-mentioned electroplating apparatus of Example 1 of the present invention, the positions of the fixed shielding plate and the mobile shielding plate are exchanged, and the anode, the mobile shielding plate, the fixed shielding plate, and the substrate are arranged in this order. Electroplating was carried out in the same manner as in Example 1 of the present invention.

（比較例１）
上述の本発明例１の電解めっき装置において、基板と同期して揺動する移動式遮蔽板及び固定式遮蔽板を取り除き、その他の条件は本発明例１と同等として、電解めっきを実施した。 (Comparative Example 1)
In the above-mentioned electroplating apparatus of Example 1 of the present invention, the mobile shielding plate and the fixed shielding plate that oscillate in synchronization with the substrate were removed, and the other conditions were the same as those of Example 1 of the present invention, and electrolytic plating was performed.

（比較例２）
上述の本発明例１の電解めっき装置において、基板と同期して揺動する移動式遮蔽板を取り除き、その他の条件は本発明例１と同等として、電解めっきを実施した。 (Comparative Example 2)
In the above-mentioned electrolytic plating apparatus of Example 1 of the present invention, the mobile shielding plate swinging in synchronization with the substrate was removed, and the other conditions were the same as those of Example 1 of the present invention, and electrolytic plating was performed.

上述のようにしてめっき層を形成した基板において、基板の幅方向の複数の箇所（１０ｍｍ間隔で４２点）でめっき層の厚さを測定し、めっき厚の最大値ｔｍａｘ、めっき厚の最小値ｔｍｉｎ、めっき厚の平均値ｔａｖｅから、以下の式で定義されるめっき厚の均一性指数を評価した。評価結果を表１に示す。なお、このめっき厚の均一性指数においては、０に近づくほどめっき厚が均一となる。
（めっき厚の均一性指数）＝（ｔｍａｘ−ｔｍｉｎ）／ｔａｖｅ In the substrate on which the plating layer is formed as described above, the thickness of the plating layer is measured at a plurality of points (42 points at 10 mm intervals) in the width direction of the substrate, and the maximum value t max of the plating thickness and the minimum plating thickness are obtained. The uniformity index of the plating thickness defined by the following formula was evaluated from the value t min and the average value tave of the plating thickness. The evaluation results are shown in Table 1. In the uniformity index of the plating thickness, the closer to 0, the more uniform the plating thickness.
(Plating thickness uniformity index) = (t max −t min ) / t ave

Figure 2020147831
Figure 2020147831

固定式遮蔽板及び移動式遮蔽板を取り除いた比較例１においては、めっき厚の均一性指数が０．６４となり、めっき厚が大きくばらついた。基板の幅方向端部において電流集中が発生し、幅方向端部においてめっき層が厚く形成されたためと推測される。
固定式遮蔽板のみを配設した比較例２においては、めっき厚の均一性指数が０．５０となり、比較例１に比べてばらつきは小さくなったものの、均一性は不十分であった。固定式遮蔽板のみでは、十分に、基板の幅方向端部における電流集中を抑制できなかったためと推測される。 In Comparative Example 1 in which the fixed shielding plate and the mobile shielding plate were removed, the uniformity index of the plating thickness was 0.64, and the plating thickness varied greatly. It is presumed that the current concentration occurred at the widthwise end of the substrate and the plating layer was thickly formed at the widthwise end.
In Comparative Example 2 in which only the fixed shielding plate was arranged, the uniformity index of the plating thickness was 0.50, and the variation was smaller than that of Comparative Example 1, but the uniformity was insufficient. It is presumed that the fixed shielding plate alone could not sufficiently suppress the current concentration at the widthwise end of the substrate.

これに対して、基板の揺動に同期して揺動する移動式遮蔽板のみを配設した本発明例２においては、めっき厚の均一性指数が０．４１となり、さらに固定式遮蔽板を併設した本発明例１においては、めっき厚の均一性指数が０．１３となり、同期揺動する移動式遮蔽板と固定式遮蔽板の位置を入れ替えた本発明例３においては、めっき厚の均一性指数が０．３２となり、比較例１，２に比べて、めっき厚のばらつきが十分に抑えられた。基板の揺動に同期して揺動する移動式遮蔽板によって、基板の幅方向端部における電流集中を十分に抑制できたためと推測される。 On the other hand, in Example 2 of the present invention in which only the mobile shielding plate that swings in synchronization with the swing of the substrate is arranged, the uniformity index of the plating thickness is 0.41 and the fixed shielding plate is further provided. In Example 1 of the present invention, which is provided side by side, the uniformity index of the plating thickness is 0.13, and in Example 3 of the present invention, in which the positions of the movable shielding plate and the fixed shielding plate that swing synchronously are exchanged, the plating thickness is uniform. The sex index was 0.32, and the variation in plating thickness was sufficiently suppressed as compared with Comparative Examples 1 and 2. It is presumed that the mobile shielding plate that swings in synchronization with the swing of the board was able to sufficiently suppress the current concentration at the widthwise end of the board.

以上のことから、本発明によれば、被めっき材の幅方向端部への電流集中を抑制するとともに、被めっき材の表面においてめっき液を十分に流動させることができ、厚さの均一なめっき層を安定して形成することが可能な電解めっき装置、及び、電解めっき方法を提供可能であることが確認された。 From the above, according to the present invention, it is possible to suppress the current concentration on the end portion of the material to be plated in the width direction and to allow the plating solution to sufficiently flow on the surface of the material to be plated, so that the thickness is uniform. It was confirmed that it is possible to provide an electrolytic plating apparatus capable of stably forming a plating layer and an electrolytic plating method.

１ アノード
３ 基板（被めっき材）
１０ 電解めっき装置
１１ めっき処理槽
１４ 噴流手段
１６ 移動式遮蔽板
１８ 固定式遮蔽板
２０ 基板支持部（被めっき材支持部）
２１ 揺動機構 1 Anode 3 Substrate (material to be plated)
10 Electrolytic plating device 11 Plating treatment tank 14 Jet means 16 Mobile shielding plate 18 Fixed shielding plate 20 Substrate support (supporting material to be plated)
21 Swing mechanism

Claims (4)

被めっき材の表面にめっき層を形成する電解めっき装置であって、
めっき液が貯留されるめっき処理槽と、前記めっき処理槽内に配置されたアノードと、前記めっき処理槽内において前記被めっき材を前記アノードに対向して配置する被めっき材支持部と、を有し、
前記被めっき材支持部は、前記被めっき材を前記アノードに対向した位置で揺動させる揺動機構を有しており、
前記アノードと前記被めっき材との間において、前記被めっき材の両端側にはそれぞれ移動式遮蔽板が配設されており、前記移動式遮蔽板は、前記被めっき材に同期して揺動する構成とされていることを特徴とする電解めっき装置。 An electrolytic plating device that forms a plating layer on the surface of the material to be plated.
A plating treatment tank in which a plating solution is stored, an anode arranged in the plating treatment tank, and a material support portion to be plated in which the material to be plated is arranged to face the anode in the plating treatment tank. Have and
The material to be plated support portion has a swing mechanism for swinging the material to be plated at a position facing the anode.
A mobile shielding plate is disposed between the anode and the material to be plated on both ends of the material to be plated, and the mobile shielding plate swings in synchronization with the material to be plated. An electrolytic plating apparatus characterized in that it is configured to be used. 前記アノードと前記被めっき材との間に、前記移動式遮蔽板に加えて、開口部を有する固定式遮蔽板が配置されていることを特徴とする請求項１に記載の電解めっき装置。 The electrolytic plating apparatus according to claim 1, wherein a fixed shielding plate having an opening is arranged between the anode and the material to be plated in addition to the mobile shielding plate. 前記アノードに対向して配置された前記被めっき材に対して、前記めっき液を噴射する噴流手段が設けられていることを特徴とする請求項１又は請求項２に記載の電解めっき装置。 The electrolytic plating apparatus according to claim 1 or 2, wherein a jet means for injecting the plating solution is provided on the material to be plated, which is arranged so as to face the anode. 被めっき材の表面にめっき層を形成する電解めっき方法であって、
請求項１から請求項３のいずれか一項に記載の電解めっき装置を用いて、前記被めっき材の揺動によって前記めっき液を前記被めっき材の表面に流動させるとともに、前記移動式遮蔽板によって前記被めっき材の両端部への電流集中を抑制することにより、前記被めっき材の表面に前記めっき層を形成することを特徴とする電解めっき方法。 It is an electrolytic plating method that forms a plating layer on the surface of the material to be plated.
Using the electroplating apparatus according to any one of claims 1 to 3, the plating solution is allowed to flow on the surface of the material to be plated by swinging the material to be plated, and the mobile shielding plate is used. An electrolytic plating method characterized in that a plating layer is formed on the surface of the material to be plated by suppressing current concentration on both ends of the material to be plated.
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