JP2020128337A - 支持ガラス基板及びこれを用いた積層体 - Google Patents
支持ガラス基板及びこれを用いた積層体 Download PDFInfo
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- JP2020128337A JP2020128337A JP2020084508A JP2020084508A JP2020128337A JP 2020128337 A JP2020128337 A JP 2020128337A JP 2020084508 A JP2020084508 A JP 2020084508A JP 2020084508 A JP2020084508 A JP 2020084508A JP 2020128337 A JP2020128337 A JP 2020128337A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Glass Compositions (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
10、26 支持ガラス基板
11、24 加工基板
12 剥離層
13、21、25 接着層
20 支持部材
22 半導体チップ
23 封止材
28 配線
29 半田バンプ
Claims (15)
- 20〜200℃の温度範囲における平均線熱膨張係数が81×10−7/℃超であり、且つ110×10−7/℃以下であることを特徴とする支持ガラス基板。
- 30〜380℃の温度範囲における平均線熱膨張係数が85×10−7/℃超であり、且つ115×10−7/℃以下であることを特徴とする支持ガラス基板。
- 半導体パッケージの製造工程で加工基板の支持に用いることを特徴とする請求項1又は2に記載の支持ガラス基板。
- オーバーフローダウンドロー法で成形されてなることを特徴とする請求項1〜3の何れかに記載の支持ガラス基板。
- ヤング率が65GPa以上であることを特徴とする請求項1〜4の何れかに記載の支持ガラス基板。
- ガラス組成として、質量%で、SiO2 50〜80%、Al2O3 1〜20%、B2O3 0〜20%、MgO 0〜10%、CaO 0〜10%、SrO 0〜7%、BaO 0〜7%、ZnO 0〜7%、Na2O 0〜25%、K2O 0〜25%を含有することを特徴とする請求項1〜5の何れかに記載の支持ガラス基板。
- ガラス組成として、質量%で、SiO2 55〜70%、Al2O3 3〜18%、B2O3 0〜8%、MgO 0〜5%、CaO 0〜10%、SrO 0〜5%、BaO 0〜5%、ZnO 0〜5%、Na2O 2〜23%、K2O 0〜20%を含有することを特徴とする請求項6に記載の支持ガラス基板。
- 板厚が2.0mm未満であり、板厚偏差が30μm以下であり、且つ反り量が60μm以下であることを特徴とする請求項1〜7の何れかに記載の支持ガラス基板。
- 少なくとも加工基板と加工基板を支持するための支持ガラス基板とを備える積層体であって、支持ガラス基板が請求項1〜8の何れかに記載の支持ガラス基板であることを特徴とする積層体。
- 加工基板が、少なくとも封止材でモールドされた半導体チップを備えることを特徴とする請求項9に記載の積層体。
- 少なくとも加工基板と加工基板を支持するための支持ガラス基板とを備える積層体を用意する工程と、
積層体を搬送する工程と、
加工基板に対して、加工処理を行う工程と、を有すると共に、支持ガラス基板が請求項1〜8の何れかに記載の支持ガラス基板であることを特徴とする半導体パッケージの製造方法。 - 加工処理が、加工基板の一方の表面に配線する工程を含むことを特徴とする請求項11に記載の半導体パッケージの製造方法。
- 加工処理が、加工基板の一方の表面に半田バンプを形成する工程を含むことを特徴とする請求項11又は12に記載の半導体パッケージの製造方法。
- 請求項11〜13の何れかに記載の半導体パッケージの製造方法により作製されたことを特徴とする半導体パッケージ。
- 半導体パッケージを備える電子機器であって、
半導体パッケージが、請求項14に記載の半導体パッケージであることを特徴とする電子機器。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
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JP2014178807 | 2014-09-03 | ||
JP2014178807 | 2014-09-03 | ||
JP2014210437 | 2014-10-15 | ||
JP2014210437 | 2014-10-15 | ||
JP2015031495 | 2015-02-20 | ||
JP2015031495 | 2015-02-20 | ||
JP2015083852 | 2015-04-16 | ||
JP2015083852 | 2015-04-16 | ||
JP2016546598A JP6741214B2 (ja) | 2014-09-03 | 2015-08-27 | 支持ガラス基板及びこれを用いた積層体 |
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JP2016546598A Division JP6741214B2 (ja) | 2014-09-03 | 2015-08-27 | 支持ガラス基板及びこれを用いた積層体 |
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JP2020128337A true JP2020128337A (ja) | 2020-08-27 |
JP6963219B2 JP6963219B2 (ja) | 2021-11-05 |
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JP2016546598A Active JP6741214B2 (ja) | 2014-09-03 | 2015-08-27 | 支持ガラス基板及びこれを用いた積層体 |
JP2020084508A Active JP6963219B2 (ja) | 2014-09-03 | 2020-05-13 | 支持ガラス基板及びこれを用いた積層体 |
JP2020084509A Active JP6892000B2 (ja) | 2014-09-03 | 2020-05-13 | 支持ガラス基板及びこれを用いた積層体 |
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JP (3) | JP6741214B2 (ja) |
KR (1) | KR102402822B1 (ja) |
CN (2) | CN115108719A (ja) |
TW (1) | TWI671271B (ja) |
WO (1) | WO2016035674A1 (ja) |
Families Citing this family (10)
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WO2018110163A1 (ja) * | 2016-12-14 | 2018-06-21 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
JP7011215B2 (ja) * | 2016-12-14 | 2022-02-10 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた積層体 |
CN110944953A (zh) * | 2017-07-26 | 2020-03-31 | Agc株式会社 | 半导体封装用支承玻璃 |
CN116462405A (zh) * | 2017-07-26 | 2023-07-21 | 日本电气硝子株式会社 | 支承玻璃基板和使用了其的层叠基板 |
JP7280546B2 (ja) * | 2017-11-09 | 2023-05-24 | 日本電気硝子株式会社 | ガラス板及びこれを用いた波長変換パッケージ |
CN116621449A (zh) * | 2018-02-20 | 2023-08-22 | 日本电气硝子株式会社 | 玻璃 |
JP7445186B2 (ja) * | 2018-12-07 | 2024-03-07 | 日本電気硝子株式会社 | ガラス |
CN111056752B (zh) * | 2019-12-18 | 2023-12-22 | 东旭集团有限公司 | 显示面板用的玻璃基板组件和玻璃基板组件的制备方法 |
CN116940536A (zh) * | 2021-02-05 | 2023-10-24 | 日本板硝子株式会社 | 玻璃组合物、以及玻璃填料及其制造方法 |
WO2023032163A1 (ja) * | 2021-09-03 | 2023-03-09 | 株式会社レゾナック | 半導体装置を製造する方法、仮固定材、及び、仮固定材の半導体装置を製造するための応用 |
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JP2011136895A (ja) * | 2009-12-04 | 2011-07-14 | Nippon Electric Glass Co Ltd | 合わせガラス |
JP2012015216A (ja) * | 2010-06-29 | 2012-01-19 | Fujitsu Ltd | 半導体装置の製造方法 |
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JP4151161B2 (ja) * | 1998-08-11 | 2008-09-17 | 旭硝子株式会社 | 基板用ガラス |
JP4692915B2 (ja) * | 2002-05-29 | 2011-06-01 | 日本電気硝子株式会社 | プラズマディスプレイ装置用前面ガラス基板。 |
JP2004067460A (ja) * | 2002-08-07 | 2004-03-04 | Central Glass Co Ltd | ガラス組成物 |
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JP6593669B2 (ja) * | 2013-09-12 | 2019-10-23 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた搬送体 |
TWI641573B (zh) * | 2014-04-07 | 2018-11-21 | 日本電氣硝子股份有限公司 | 支撐玻璃基板及使用其的積層體、半導體封裝及其製造方法以及電子設備 |
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- 2015-08-27 CN CN202210859949.1A patent/CN115108719A/zh active Pending
- 2015-08-27 KR KR1020177001285A patent/KR102402822B1/ko active IP Right Grant
- 2015-08-27 CN CN201580038593.3A patent/CN106660855A/zh active Pending
- 2015-08-27 WO PCT/JP2015/074269 patent/WO2016035674A1/ja active Application Filing
- 2015-08-27 JP JP2016546598A patent/JP6741214B2/ja active Active
- 2015-08-28 TW TW104128245A patent/TWI671271B/zh active
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- 2020-05-13 JP JP2020084508A patent/JP6963219B2/ja active Active
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JP2002025040A (ja) * | 2000-06-30 | 2002-01-25 | Hitachi Ltd | 磁気ディスク用ガラス基板及びそれを用いた磁気ディスク |
JP2011136895A (ja) * | 2009-12-04 | 2011-07-14 | Nippon Electric Glass Co Ltd | 合わせガラス |
JP2012015216A (ja) * | 2010-06-29 | 2012-01-19 | Fujitsu Ltd | 半導体装置の製造方法 |
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Publication number | Publication date |
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KR20170048315A (ko) | 2017-05-08 |
CN106660855A (zh) | 2017-05-10 |
TWI671271B (zh) | 2019-09-11 |
JP6963219B2 (ja) | 2021-11-05 |
JP2020128338A (ja) | 2020-08-27 |
KR102402822B1 (ko) | 2022-05-27 |
JPWO2016035674A1 (ja) | 2017-06-15 |
JP6741214B2 (ja) | 2020-08-19 |
JP6892000B2 (ja) | 2021-06-18 |
CN115108719A (zh) | 2022-09-27 |
WO2016035674A1 (ja) | 2016-03-10 |
TW201620849A (zh) | 2016-06-16 |
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