JP2020088319A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2020088319A JP2020088319A JP2018224872A JP2018224872A JP2020088319A JP 2020088319 A JP2020088319 A JP 2020088319A JP 2018224872 A JP2018224872 A JP 2018224872A JP 2018224872 A JP2018224872 A JP 2018224872A JP 2020088319 A JP2020088319 A JP 2020088319A
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- Prior art keywords
- lead
- connecting portion
- semiconductor device
- connection
- recess
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Abstract
Description
図1〜図9に基づき、本開示の第1実施形態にかかる半導体装置A1について説明する。半導体装置A1は、第1リード1、2個の第2リード2、接続リード3、半導体素子6、および封止樹脂8を備える。
図15に基づき、本開示の第2実施形態にかかる半導体装置A2について説明する。図15において、先述した半導体装置A1と同一または類似の要素には同一の符号を付して、重複する説明を省略する。図15は、半導体装置A2を示す要部拡大断面図であり、第1実施形態にかかる半導体装置A1の図8に相当する図である。
図16に基づき、本開示の第3実施形態にかかる半導体装置A3について説明する。図16において、先述した半導体装置A1と同一または類似の要素には同一の符号を付して、重複する説明を省略する。図16は、半導体装置A3を示す要部拡大平面図であり、第1実施形態にかかる半導体装置A1の図7に相当する図である。
図17に基づき、本開示の第4実施形態にかかる半導体装置A4について説明する。図17において、先述した半導体装置A1と同一または類似の要素には同一の符号を付して、重複する説明を省略する。図17は、半導体装置A4を示す要部拡大平面図であり、第1実施形態にかかる半導体装置A1の図7に相当する図である。
図18に基づき、本開示の第5実施形態にかかる半導体装置A5について説明する。図18において、先述した半導体装置A1と同一または類似の要素には同一の符号を付して、重複する説明を省略する。図18は、半導体装置A5の内部を透過させた平面図であり、第1実施形態にかかる半導体装置A1の図2に相当する図である。
図19に基づき、本開示の第6実施形態にかかる半導体装置A6について説明する。図19において、先述した半導体装置A1と同一または類似の要素には同一の符号を付して、重複する説明を省略する。図19は、半導体装置A6の内部を透過させた平面図であり、第1実施形態にかかる半導体装置A1の図2に相当する図である。
図20に基づき、本開示の第7実施形態にかかる半導体装置A7について説明する。図20において、先述した半導体装置A6と同一または類似の要素には同一の符号を付して、重複する説明を省略する。図20は、半導体装置A7の内部を透過させた平面図であり、第6実施形態にかかる半導体装置A6の図19に相当する図である。
厚さ方向において互いに反対側を向く素子主面および素子裏面と、前記素子裏面に配置された第1電極と、前記素子主面に配置された第2電極とを有する半導体素子と、
前記半導体素子の前記第1電極が接合された第1リードと、
前記第2電極と導通する第2リードと、
前記第2電極に接合された素子接続部、および、はんだによって前記第2リードに接合されたリード接続部を有する導電体である接続リードと、
を備え、
前記リード接続部は、前記厚さ方向に直交する第1方向において、前記半導体素子側を向くリード接続部第1面と、前記リード接続部第1面とは反対側を向くリード接続部第2面と、前記リード接続部第1面および前記リード接続部第2面につながり、かつ、前記厚さ方向における前記素子裏面側を向くリード接続部端面と、を備え、
前記第2リードは、前記リード接続部第2面に対向する凹部第1側面および前記リード接続部端面に対向する凹部底面と、を有し、かつ、前記第1方向における前記半導体素子側が開放された接続部凹部を備え、
前記リード接続部第2面とはんだとの接触領域である第2接触領域の面積が、前記リード接続部第1面とはんだとの接触領域である第1接触領域の面積より大きい、
ことを特徴とする半導体装置。
〔付記2〕
前記接続部凹部は、前記凹部第1側面および前記凹部底面に交差する凹部第2側面と、をさらに備える、
付記1に記載の半導体装置。
〔付記3〕
前記リード接続部は、前記リード接続部第1面および前記リード接続部端面に交差し、かつ、前記凹部第2側面に対向するリード接続部第1側面と、前記リード接続部第1側面とは反対側を向くリード接続部第2側面と、をさらに備え、
前記リード接続部第1側面とはんだとの接触領域である第3接触領域の面積が、前記リード接続部第2側面とはんだとの接触領域である第4接触領域の面積より大きい、
付記2に記載の半導体装置。
〔付記4〕
前記接続部凹部は、前記リード接続部第2側面の向く側が開放されている、
付記3に記載の半導体装置。
〔付記5〕
前記リード接続部第1面と前記リード接続部第2面との距離は、前記リード接続部第1面の前記厚さ方向の寸法より小さい、
付記1ないし4のいずれかに記載の半導体装置。
〔付記6〕
前記第2リードは、前記第1方向において前記半導体素子側を向き、かつ、前記凹部第1側面より前記半導体素子側に位置する接続部側面をさらに備える、
付記1ないし5のいずれかに記載の半導体装置。
〔付記7〕
前記第1方向において、前記接続部側面と前記リード接続部第1面との距離は、前記リード接続部第2面と前記凹部第1側面との距離以下である、
付記6に記載の半導体装置。
〔付記8〕
前記接続部側面は、前記接続部凹部側の端部に、前記半導体素子側に突出した突出部を備える、
付記6または7に記載の半導体装置。
〔付記9〕
前記リード接続部第2面と前記凹部第1側面との距離は、前記リード接続部第1面と前記リード接続部第2面との距離以下であり、当該距離の1/3以上である、
付記1ないし8のいずれかに記載の半導体装置。
〔付記10〕
前記半導体素子を覆い、かつ、前記厚さ方向において互いに反対側を向く樹脂主面および樹脂裏面と、当該樹脂主面および樹脂裏面を繋ぐ樹脂側面とを有する封止樹脂をさらに備え、
前記第1リードおよび前記第2リードは、前記樹脂裏面から露出する、
付記1ないし9のいずれかに記載の半導体装置。
〔付記11〕
複数の前記第2リードを備え、
前記複数の第2リードは、前記樹脂側面に沿って配置されている、
付記10に記載の半導体装置。
〔付記12〕
前記第2リードを2個備え、
前記接続リードは、2個の前記リード接続部と、前記2個のリード接続部と前記素子接続部とを連結する連結部と、を備える、
付記10または11に記載の半導体装置。
〔付記13〕
前記半導体素子はダイオードである、
付記1ないし12のいずれかに記載の半導体装置。
〔付記14〕
前記半導体素子は、前記素子主面に配置された第3電極をさらに備え、
前記第3電極と導通する第3リードをさらに備える、
付記1ないし12のいずれかに記載の半導体装置。
〔付記15〕
前記第3電極および前記第3リードに接合された導電体である第2の接続リードをさらに備える、
付記14に記載の半導体装置。
〔付記16〕
前記第3電極および前記第3リードに接合されたボンディングワイヤをさらに備える、
付記14に記載の半導体装置。
〔付記17〕
前記半導体素子はトランジスタである、
付記14ないし16のいずれかに記載の半導体装置。
1 :第1リード
11 :搭載部
111 :搭載部主面
112 :搭載部裏面
12 :第1リード端子部
121 :第1リード端子部主面
122 :第1リード端子部裏面
123 :第1リード端子部端面
124 :端面凹部
13 :薄肉部
131 :薄肉部主面
132 :薄肉部裏面
14 :タイバー部
143 :端面
2 :第2リード
21 :接続部
211 :接続部主面
212 :接続部裏面
213 :接続部側面
213a :突出部
22 :第2リード端子部
221 :第2リード端子部主面
222 :第2リード端子部裏面
223 :第2リード端子部端面
224 :端面凹部
24 :接続部凹部
241 :凹部底面
242 :凹部第1側面
243 :凹部第2側面
3 :接続リード
31 :素子接続部
311 :素子接続部第1面
312 :素子接続部第2面
32 :リード接続部
321 :リード接続部第1面
322 :リード接続部第2面
323 :リード接続部第1側面
324 :リード接続部第2側面
325 :リード接続部端面
33 :連結部
331 :連結部第1面
332 :連結部第2面
34 :タイバー部
4 :第3リード
41 :接続部
42 :第3リード端子部
44 :接続部凹部
5 :接続リード
51 :素子接続部
52 :リード接続部
53 :連結部
6 :半導体素子
60 :素子本体
61 :素子主面
62 :素子裏面
63 :第1電極
64 :第2電極
65 :第3電極
7 :ボンディングワイヤ
8 :封止樹脂
81 :樹脂主面
82 :樹脂裏面
83 :樹脂側面
831 :第1側面
832 :第2側面
9 :はんだ
91,92,93,94 :はんだフィレット
900 :はんだペースト
10,20:リードフレーム
1010 :主面
1020 :領域
1030 :領域
1040 :貫通孔
1050 :切断線
1060 :タイバー
1070 :切断線
1080 :タイバー
Claims (17)
- 厚さ方向において互いに反対側を向く素子主面および素子裏面と、前記素子裏面に配置された第1電極と、前記素子主面に配置された第2電極とを有する半導体素子と、
前記半導体素子の前記第1電極が接合された第1リードと、
前記第2電極と導通する第2リードと、
前記第2電極に接合された素子接続部、および、はんだによって前記第2リードに接合されたリード接続部を有する導電体である接続リードと、
を備え、
前記リード接続部は、前記厚さ方向に直交する第1方向において、前記半導体素子側を向くリード接続部第1面と、前記リード接続部第1面とは反対側を向くリード接続部第2面と、前記リード接続部第1面および前記リード接続部第2面につながり、かつ、前記厚さ方向における前記素子裏面側を向くリード接続部端面と、を備え、
前記第2リードは、前記リード接続部第2面に対向する凹部第1側面および前記リード接続部端面に対向する凹部底面を有し、かつ、前記第1方向における前記半導体素子側が開放された接続部凹部を備え、
前記リード接続部第2面とはんだとの接触領域である第2接触領域の面積が、前記リード接続部第1面とはんだとの接触領域である第1接触領域の面積より大きい、
ことを特徴とする半導体装置。 - 前記接続部凹部は、前記凹部第1側面および前記凹部底面に交差する凹部第2側面と、をさらに備える、
請求項1に記載の半導体装置。 - 前記リード接続部は、前記リード接続部第1面および前記リード接続部端面に交差し、かつ、前記凹部第2側面に対向するリード接続部第1側面と、前記リード接続部第1側面とは反対側を向くリード接続部第2側面と、をさらに備え、
前記リード接続部第1側面とはんだとの接触領域である第3接触領域の面積が、前記リード接続部第2側面とはんだとの接触領域である第4接触領域の面積より大きい、
請求項2に記載の半導体装置。 - 前記接続部凹部は、前記リード接続部第2側面の向く側が開放されている、
請求項3に記載の半導体装置。 - 前記リード接続部第1面と前記リード接続部第2面との距離は、前記リード接続部第1面の前記厚さ方向の寸法より小さい、
請求項1ないし4のいずれかに記載の半導体装置。 - 前記第2リードは、前記第1方向において前記半導体素子側を向き、かつ、前記凹部第1側面より前記半導体素子側に位置する接続部側面をさらに備える、
請求項1ないし5のいずれかに記載の半導体装置。 - 前記第1方向において、前記接続部側面と前記リード接続部第1面との距離は、前記リード接続部第2面と前記凹部第1側面との距離以下である、
請求項6に記載の半導体装置。 - 前記接続部側面は、前記接続部凹部側の端部に、前記半導体素子側に突出した突出部を備える、
請求項6または7に記載の半導体装置。 - 前記リード接続部第2面と前記凹部第1側面との距離は、前記リード接続部第1面と前記リード接続部第2面との距離以下であり、当該距離の1/3以上である、
請求項1ないし8のいずれかに記載の半導体装置。 - 前記半導体素子を覆い、かつ、前記厚さ方向において互いに反対側を向く樹脂主面および樹脂裏面と、当該樹脂主面および樹脂裏面を繋ぐ樹脂側面とを有する封止樹脂をさらに備え、
前記第1リードおよび前記第2リードは、前記樹脂裏面から露出する、
請求項1ないし9のいずれかに記載の半導体装置。 - 複数の前記第2リードを備え、
前記複数の第2リードは、前記樹脂側面に沿って配置されている、
請求項10に記載の半導体装置。 - 前記第2リードを2個備え、
前記接続リードは、2個の前記リード接続部と、前記2個のリード接続部と前記素子接続部とを連結する連結部と、を備える、
請求項10または11に記載の半導体装置。 - 前記半導体素子はダイオードである、
請求項1ないし12のいずれかに記載の半導体装置。 - 前記半導体素子は、前記素子主面に配置された第3電極をさらに備え、
前記第3電極と導通する第3リードをさらに備える、
請求項1ないし12のいずれかに記載の半導体装置。 - 前記第3電極および前記第3リードに接合された導電体である第2の接続リードをさらに備える、
請求項14に記載の半導体装置。 - 前記第3電極および前記第3リードに接合されたボンディングワイヤをさらに備える、
請求項14に記載の半導体装置。 - 前記半導体素子はトランジスタである、
請求項14ないし16のいずれかに記載の半導体装置。
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EP1191589A2 (en) * | 2000-08-31 | 2002-03-27 | Nec Corporation | Semiconductor device having lead frame and metal plate |
JP2011049244A (ja) * | 2009-08-25 | 2011-03-10 | Shindengen Electric Mfg Co Ltd | 樹脂封止型半導体装置 |
JP2012043956A (ja) * | 2010-08-18 | 2012-03-01 | Toshiba Corp | 半導体装置及び電力用半導体装置 |
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EP1191589A2 (en) * | 2000-08-31 | 2002-03-27 | Nec Corporation | Semiconductor device having lead frame and metal plate |
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