JP2020068453A - Ultrasonic element and ultrasonic device - Google Patents

Ultrasonic element and ultrasonic device Download PDF

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JP2020068453A
JP2020068453A JP2018200009A JP2018200009A JP2020068453A JP 2020068453 A JP2020068453 A JP 2020068453A JP 2018200009 A JP2018200009 A JP 2018200009A JP 2018200009 A JP2018200009 A JP 2018200009A JP 2020068453 A JP2020068453 A JP 2020068453A
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support
support wall
ultrasonic
opening
wall
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JP7176346B2 (en
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鈴木　博則
Hironori Suzuki
博則 鈴木
力 小島
Chikara Kojima
力 小島
幸司 大橋
Koji Ohashi
幸司 大橋
泰幸 松本
Yasuyuki Matsumoto
泰幸 松本
克浩 今井
Katsuhiro Imai
克浩 今井
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

To provide an ultrasonic element and an ultrasonic device with which desired frequency characteristics can be obtained.SOLUTION: An ultrasonic element comprises: an element substrate that has a first surface, a second surface in a front-and-back relationship with the first surface, an opening penetrating from the first surface to the second surface, and a partition wall part surrounding the opening; a support film that has a third surface provided on the first surface of the element substrate to cover the opening and facing the opening, and a fourth surface in a front-and-back relationship with the third surface; a support wall that is provided on the fourth surface of the support film, and in a plan view viewed from a film thickness direction directed from the third surface to the fourth surface, partitions, with the partition wall part, a predetermined vibration area in an area of the support film overlapping with the opening; a piezoelectric element that is provided in the vibration area surrounded by the partition wall part and support wall; and a sealing plate that is provided opposite to the fourth surface of the support film. The sealing plate has beam parts that project toward the support wall at positions opposite to the support wall, and the beam parts and the support wall are joined to each other.SELECTED DRAWING: Figure 3

Description

本発明は、超音波素子、及び超音波装置に関する。   The present invention relates to an ultrasonic element and an ultrasonic device.

従来、開口部を有する基板の一面側に開口部を覆う支持膜を設け、開口部に対応する位置の支持膜上に圧電素子を配置した超音波素子が知られている（例えば、特許文献１参照）。   Conventionally, there is known an ultrasonic element in which a support film covering an opening is provided on one surface side of a substrate having an opening, and a piezoelectric element is arranged on the support film at a position corresponding to the opening (for example, Patent Document 1). reference).

特許文献１の超音波素子では、支持膜の基板とは反対側の面に、梁部を介して封止板が接続されている。これにより、支持膜、梁部及び封止板によりキャビティを形成することで、圧電素子を振動させる領域を確保している。そして、このような超音波素子では、開口部を覆う支持膜のうち、平面視において、互いに対向する一対の基板の隔壁の縁と、互いに対向する一対の梁部の縁と、により囲われる領域が圧電素子により振動する振動部となる。   In the ultrasonic element of Patent Document 1, a sealing plate is connected to the surface of the supporting film opposite to the substrate via a beam portion. With this, by forming the cavity by the support film, the beam portion, and the sealing plate, a region for vibrating the piezoelectric element is secured. In such an ultrasonic element, a region of the support film that covers the opening is surrounded by the edges of the partition walls of the pair of substrates facing each other and the edges of the pair of beam portions facing each other in a plan view. Becomes a vibrating portion that vibrates by the piezoelectric element.

特開２０１８−１１０３６０号公報JP, 2008-110360, A

特許文献１の超音波素子では、互いに対向する一対の梁部の中心に圧電素子が位置するように、梁部を支持膜に接合させている。しかし、梁部と支持膜との張り合わせ誤差により、梁部の位置が所定の位置からずれる、すなわち、互いに対向する一対の梁部の中心に圧電素子が位置しないことがある。そうすると、振動部における圧電素子の相対位置が変化するため、所望する周波数特性が発揮できないといった問題があった。   In the ultrasonic element of Patent Document 1, the beam portion is bonded to the support film so that the piezoelectric element is located at the center of the pair of beam portions facing each other. However, the position of the beam portion may deviate from a predetermined position due to the bonding error between the beam portion and the support film, that is, the piezoelectric element may not be located at the center of the pair of beam portions facing each other. Then, since the relative position of the piezoelectric element in the vibrating portion changes, there is a problem that desired frequency characteristics cannot be exhibited.

本発明の一適用例に係る超音波素子は、第一面、及び前記第一面と表裏を為す第二面と、前記第一面から前記第二面までを貫通する開口部と、前記開口部を囲う隔壁部とを有する素子基板と、前記素子基板の前記第一面に設けられて前記開口部を覆い、前記開口部に臨む第三面と、前記第三面と表裏を為す第四面とを有する支持膜と、前記支持膜の前記第四面に設けられ、前記第三面から前記第四面に向かう膜厚方向から見た平面視において、前記隔壁部とともに、前記支持膜の前記開口部と重なる領域に所定の振動領域を区画する支持壁と、前記支持膜の、前記隔壁部及び前記支持壁により囲われる前記振動領域に設けられた圧電素子と、前記支持膜の前記第四面に対向して設けられる封止板と、を備え、前記封止板は、前記支持壁に対向する位置に、前記支持壁に向かって突出する梁部を有し、前記梁部と前記支持壁とが接合されていることを特徴とする。   An ultrasonic element according to an application example of the present invention includes a first surface, a second surface that is a front surface and a back surface of the first surface, an opening that penetrates from the first surface to the second surface, and the opening. An element substrate having a partition wall that surrounds a portion, a third surface provided on the first surface of the element substrate to cover the opening, and faces the opening, and a fourth surface that is the front and back of the third surface. A supporting film having a surface, and provided in the fourth surface of the supporting film, in a plan view seen from the film thickness direction from the third surface to the fourth surface, together with the partition wall, of the supporting film. A support wall partitioning a predetermined vibration region into a region overlapping the opening, a piezoelectric element provided in the vibration region of the support film surrounded by the partition wall and the support wall, and the first support film of the support film. And a sealing plate provided to face the four surfaces, wherein the sealing plate faces the supporting wall. In that position, it has a beam portion that protrudes toward the support wall, and the beam portion and the supporting wall, characterized in that it is joined.

本適用例の超音波素子において、前記振動領域は、前記隔壁部の縁及び前記支持壁の縁により囲われた領域であり、前記振動領域を区画する前記支持壁の縁に沿った方向及び前記膜厚方向に直交する前記支持壁の幅は、前記梁部の幅よりも小さいことが好ましい。   In the ultrasonic element of this application example, the vibrating region is a region surrounded by an edge of the partition wall portion and an edge of the supporting wall, and a direction along the edge of the supporting wall that defines the vibrating region and the It is preferable that the width of the support wall orthogonal to the film thickness direction is smaller than the width of the beam portion.

本適用例の超音波素子において、前記梁部と前記支持壁とが接着部材により接合されており、前記振動領域は、前記隔壁部の縁及び前記支持壁の縁により囲われた領域であり、前記振動領域を区画する前記支持壁の縁に沿った方向及び前記膜厚方向に直交する前記支持壁の幅は、前記梁部の幅よりも大きいことが好ましい。   In the ultrasonic element of this application example, the beam portion and the support wall are joined by an adhesive member, the vibration region is a region surrounded by the edge of the partition wall and the edge of the support wall, It is preferable that a width of the support wall that is orthogonal to a direction along an edge of the support wall that defines the vibration region and the film thickness direction is larger than a width of the beam portion.

本発明の一適用例に係る超音波装置は、上述した適用例の超音波素子と、前記圧電素子に対して駆動信号を入力する駆動回路と、を備えることを特徴とする。   An ultrasonic device according to an application example of the present invention is characterized by including the ultrasonic element of the application example described above and a drive circuit for inputting a drive signal to the piezoelectric element.

第一実施形態の超音波装置の一例である距離測定装置の概略構成を示すブロック図。The block diagram which shows the schematic structure of the distance measuring device which is an example of the ultrasonic device of 1st embodiment. 第一実施形態の超音波素子の構成を模式的に示す平面図。The top view which shows typically the structure of the ultrasonic element of 1st embodiment. 図２におけるＡ−Ａ線で切断した超音波素子を模式的に示す断面図。Sectional drawing which shows typically the ultrasonic element cut | disconnected by the AA line in FIG. 第一実施形態の超音波素子の概略を模式的に示す断面斜視図。The sectional perspective view which shows the outline of the ultrasonic element of a first embodiment typically. 第一実施形態の超音波素子の製造工程の概略を示す図。The figure which shows the outline of the manufacturing process of the ultrasonic element of 1st embodiment. 第一実施形態の超音波素子の製造工程の概略を示す図。The figure which shows the outline of the manufacturing process of the ultrasonic element of 1st embodiment. 第二実施形態の超音波素子の概略を模式的に示す断面図。Sectional drawing which shows the outline of the ultrasonic element of 2nd embodiment typically.

［第一実施形態］
以下、第一実施形態について説明する。
図１は、第一実施形態の超音波装置の一例である距離測定装置１の概略構成を示すブロック図である。
図１に示すように、本実施形態の距離測定装置１は、超音波素子１０と、超音波素子１０を制御する制御部２０とを備える。この距離測定装置１では、制御部２０は、駆動回路３０を介して超音波素子１０を制御し、超音波素子１０から超音波を送信する。そして、対象物により超音波が反射され、超音波素子１０により反射波が受信されると、制御部２０は、超音波の送信タイミングから超音波の受信タイミングの時間に基づいて、超音波素子１０から対象物までの距離を算出する。
以下、このような距離測定装置１の構成について、具体的に説明する。 [First embodiment]
The first embodiment will be described below.
FIG. 1 is a block diagram showing a schematic configuration of a distance measuring device 1 which is an example of the ultrasonic device according to the first embodiment.
As shown in FIG. 1, the distance measuring device 1 of the present embodiment includes an ultrasonic element 10 and a control unit 20 that controls the ultrasonic element 10. In the distance measuring device 1, the control unit 20 controls the ultrasonic element 10 via the drive circuit 30 and transmits ultrasonic waves from the ultrasonic element 10. Then, when the ultrasonic wave is reflected by the object and the reflected wave is received by the ultrasonic element 10, the control unit 20 determines the ultrasonic element 10 based on the time from the ultrasonic wave transmission timing to the ultrasonic wave reception timing. Calculate the distance from to the object.
Hereinafter, the configuration of such a distance measuring device 1 will be specifically described.

［超音波素子１０の構成］
図２は、超音波素子１０の概略を模式的に示す平面図である。なお、図２において、封止板４５の図示は省略している。
図２に示すように、超音波素子１０には、互いに交差するＸ方向及びＹ方向に沿って、複数の超音波トランスデューサー５０が２次元アレイ状に配置されている。なお、図２では、Ｘ方向とＹ方向とが直交する場合を例示している。
本実施形態では、Ｙ方向に配置された複数の超音波トランスデューサー５０により、１チャネルの送受信列素子群が構成される。また、当該１チャネルの送受信列素子群がＹ方向に沿って複数並んで配置されることで、１次元アレイ構造の超音波素子１０が構成される。ここで、超音波トランスデューサー５０が配置される領域をアレイ領域Ａｒとする。
なお、図２は、説明の便宜上、超音波トランスデューサー５０の配置数を減らしているが、実際には、より多くの超音波トランスデューサー５０が配置されている。 [Configuration of ultrasonic element 10]
FIG. 2 is a plan view schematically showing the outline of the ultrasonic element 10. Note that the illustration of the sealing plate 45 is omitted in FIG. 2.
As shown in FIG. 2, in the ultrasonic element 10, a plurality of ultrasonic transducers 50 are arranged in a two-dimensional array along the X direction and the Y direction intersecting with each other. Note that FIG. 2 illustrates the case where the X direction and the Y direction are orthogonal to each other.
In the present embodiment, a plurality of ultrasonic transducers 50 arranged in the Y direction constitute a 1-channel transmitting / receiving array element group. Also, the ultrasonic element 10 having a one-dimensional array structure is configured by arranging a plurality of the transmission / reception column element groups of the one channel side by side along the Y direction. Here, a region where the ultrasonic transducer 50 is arranged is referred to as an array region Ar.
In FIG. 2, the number of ultrasonic transducers 50 arranged is reduced for convenience of explanation, but in reality, more ultrasonic transducers 50 are arranged.

図３は、図２におけるＡ−Ａ線で切断した超音波素子１０を模式的に示す断面図であり、図４は、超音波素子１０の概略を模式的に示す断面斜視図である。
図３及び図４に示すように、超音波素子１０は、素子基板４１と、支持膜４２と、圧電素子４３と、支持壁４４と、封止板４５と、を含んで構成されている。 3 is a sectional view schematically showing the ultrasonic element 10 taken along the line AA in FIG. 2, and FIG. 4 is a sectional perspective view schematically showing the ultrasonic element 10.
As shown in FIGS. 3 and 4, the ultrasonic element 10 includes an element substrate 41, a support film 42, a piezoelectric element 43, a support wall 44, and a sealing plate 45.

［素子基板４１の構成］
素子基板４１は、第一面４１１、及び第一面４１１と表裏を為す第二面４１２を有し、例えばＳｉ等の半導体基板により構成されている。本実施形態では、素子基板４１には、Ｙ方向に長手となる開口部４１Ａが、Ｘ方向に複数設けられている。
各開口部４１Ａは、素子基板４１の第一面４１１から第二面４１２までを貫通する貫通孔であり、当該貫通孔の第一面４１１側に支持膜４２が設けられる。すなわち、支持膜４２により開口部４１Ａの第一面４１１側が覆われている。なお、開口部４１Ａには、クロストークの影響を抑制するために、樹脂等が充填されて振動抑制層が形成されていてもよい。
ここで、素子基板４１の支持膜４２と接合される部分は隔壁部４１Ｂであり、開口部４１Ａは、隔壁部４１Ｂにより、±Ｘ側及び±Ｙ側の四方が囲われることで形成される。よって、±Ｘ側の隔壁部４１Ｂは、Ｘ方向で互いに対向し、±Ｙ側の隔壁部４１ＢはＹ方向で互いに対向する。 [Configuration of Element Substrate 41]
The element substrate 41 has a first surface 411 and a second surface 412 that is a front surface and a back surface of the first surface 411, and is made of a semiconductor substrate such as Si. In the present embodiment, the element substrate 41 is provided with a plurality of openings 41A extending in the Y direction in the X direction.
Each opening 41A is a through hole that penetrates from the first surface 411 to the second surface 412 of the element substrate 41, and the support film 42 is provided on the first surface 411 side of the through hole. That is, the support film 42 covers the first surface 411 side of the opening 41A. The opening 41A may be filled with a resin or the like to form a vibration suppressing layer in order to suppress the influence of crosstalk.
Here, a portion of the element substrate 41 joined to the support film 42 is a partition wall 41B, and the opening 41A is formed by surrounding the ± X side and the ± Y side by the partition wall 41B. Therefore, the ± X side partition portions 41B face each other in the X direction, and the ± Y side partition portions 41B face each other in the Y direction.

［支持膜４２の構成］
支持膜４２は、例えばＳｉＯ２及びＺｒＯ２の積層体等より構成され、素子基板４１の開口部４１Ａに臨む第三面４２１及び当該第三面４２１の裏面である第四面４２２を有する。すなわち、支持膜４２は、開口部４１Ａを構成する隔壁部４１Ｂにより支持され、開口部４１Ａの第一面４１１側を覆う。この支持膜４２の厚み寸法は、素子基板４１に対して十分小さい厚み寸法となる。 [Structure of support film 42]
Support film 42 is constituted of, for example, from SiO 2 and ZrO 2 in the stack, and has a fourth surface 422 is a rear surface of the third surface 421 and the third surface 421 facing the opening portion 41A of the element substrate 41. That is, the support film 42 is supported by the partition wall portion 41B forming the opening 41A and covers the opening 41A on the first surface 411 side. The thickness dimension of the support film 42 is sufficiently smaller than that of the element substrate 41.

［支持壁４４の構成］
支持壁４４は、例えば樹脂により構成されており、エッチング等により支持膜４２の第四面４２２側に設けられている。このような、支持壁４４は、Ｘ方向が長手方向とされ、Ｙ方向に複数設けられる。本実施形態では、支持壁４４は、アレイ領域Ａｒ内において、±Ｘ側端部間に亘って形成されている。 [Configuration of Support Wall 44]
The support wall 44 is made of, for example, resin, and is provided on the fourth surface 422 side of the support film 42 by etching or the like. A plurality of such support walls 44 are provided in the Y direction, with the X direction being the longitudinal direction. In the present embodiment, the support wall 44 is formed across the ± X side ends in the array region Ar.

このような構成では、支持膜４２は、第三面４２１から第四面４２２に向かう膜厚方向から見た平面視において、開口部４１Ａを構成する隔壁部４１Ｂの縁と、支持壁４４の縁とにより、複数の振動領域としての振動部４２３に区画される。
具体的には、開口部４１Ａの±Ｙ側端部においては、支持膜４２のうち、Ｘ方向に延びる１つの隔壁部４１Ｂの縁と、Ｙ方向に延びる一対の隔壁部４１Ｂの互いに向かい合う２つの縁と、Ｘ方向に延びる１つの支持壁４４の縁とにより囲われる領域が振動部４２３となる。また、開口部４１Ａの端部以外においては、支持膜４２のうち、Ｙ方向に延びる一対の隔壁部４１Ｂの互いに向かい合う２つの縁と、Ｘ方向に延びる一対の支持壁４４の互いに向かい合う２つの縁とにより囲われる領域が振動部４２３となる。 In such a configuration, the support film 42 has an edge of the partition wall portion 41B forming the opening 41A and an edge of the support wall 44 in a plan view seen from the film thickness direction from the third surface 421 to the fourth surface 422. With, the vibration section 423 is divided into a plurality of vibration areas.
Specifically, at the ± Y side ends of the opening 41A, one edge of one partition wall 41B extending in the X direction and two edges of the pair of partition wall 41B extending in the Y direction facing each other in the support film 42 are provided. A region surrounded by the edge and the edge of the one support wall 44 extending in the X direction serves as the vibrating portion 423. In the support film 42, other than the ends of the openings 41A, two edges of the pair of partition walls 41B extending in the Y direction facing each other and two edges of the pair of support walls 44 extending in the X direction facing each other. The area surrounded by and becomes the vibrating section 423.

支持壁４４は、当該支持壁４４の縁に沿った方向及び支持膜４２の膜厚方向と直交する方向、すなわち、Ｙ方向における幅Ｗ１が、例えば２０μｍとされており、後述する梁部４５１の幅ＷＲよりも小さい。また、支持壁４４は、後述する梁部４５１の取付面４５２に対向する接合面４４１を有する。   The support wall 44 has a width W1 in the direction along the edge of the support wall 44 and in the direction orthogonal to the film thickness direction of the support film 42, that is, in the Y direction, for example, 20 μm. It is smaller than the width WR. Further, the support wall 44 has a joining surface 441 facing a mounting surface 452 of the beam portion 451 described later.

［圧電素子４３の構成］
圧電素子４３は、支持膜４２の第四面４２２側において、各振動部４２３の中心部にそれぞれ設けられている。この圧電素子４３は、例えば、支持膜４２側から下部電極４３１、圧電膜４３２、及び上部電極４３３を積層した積層体により構成されている。
このような超音波トランスデューサー５０では、下部電極４３１及び上部電極４３３の間に所定周波数の矩形波電圧、つまり駆動信号が印加されることで、圧電膜４３２が撓んで振動部４２３が振動して超音波が送出される。また、被検体から反射された超音波により振動部４２３が振動されると、圧電膜４３２の上下で電位差が発生する。これにより、下部電極４３１及び上部電極４３３の間に発生する電位差を検出することで、受信した超音波を検出することが可能となる。 [Configuration of Piezoelectric Element 43]
The piezoelectric element 43 is provided on the fourth surface 422 side of the support film 42 at the center of each vibrating section 423. The piezoelectric element 43 is formed of, for example, a laminated body in which a lower electrode 431, a piezoelectric film 432, and an upper electrode 433 are laminated from the support film 42 side.
In such an ultrasonic transducer 50, when a rectangular wave voltage having a predetermined frequency, that is, a drive signal is applied between the lower electrode 431 and the upper electrode 433, the piezoelectric film 432 bends and the vibrating portion 423 vibrates. Ultrasonic waves are transmitted. Further, when the vibration part 423 is vibrated by the ultrasonic waves reflected from the subject, a potential difference is generated above and below the piezoelectric film 432. Accordingly, it is possible to detect the received ultrasonic wave by detecting the potential difference generated between the lower electrode 431 and the upper electrode 433.

本実施形態では、図２に示すように、下部電極４３１は、Ｙ方向に沿って直線状に形成されており、１チャネルの送受信列素子群を構成する複数の超音波トランスデューサー５０を接続する。この下部電極４３１の両端部には、駆動端子４３１Ａが設けられる。
また、上部電極４３３は、Ｘ方向に沿って直線状に形成されており、Ｘ方向に並ぶ超音波トランスデューサー５０を接続する。そして、上部電極４３３の±Ｙ側端部は共通電極線４３３Ａに接続される。この共通電極線４３３Ａは、Ｘ方向に複数配置された各上部電極４３３同士を結線し、その端部には、回路基板に電気接続される共通端子４３３Ｂが設けられている。
この駆動端子４３１Ａ及び共通端子４３３Ｂは、それぞれ駆動回路３０に接続され、駆動端子４３１Ａには、駆動回路３０から駆動信号が入力され、共通端子４３３Ｂには、所定の共通電位、例えば、−３Ｖが印加される。 In the present embodiment, as shown in FIG. 2, the lower electrode 431 is linearly formed along the Y direction, and connects the plurality of ultrasonic transducers 50 that form a 1-channel transmitting / receiving array element group. . Drive terminals 431A are provided at both ends of the lower electrode 431.
Further, the upper electrode 433 is linearly formed along the X direction and connects the ultrasonic transducers 50 arranged in the X direction. Then, the ± Y side ends of the upper electrode 433 are connected to the common electrode line 433A. The common electrode line 433A connects the plurality of upper electrodes 433 arranged in the X direction, and a common terminal 433B electrically connected to the circuit board is provided at an end of the common electrode line 433A.
The drive terminal 431A and the common terminal 433B are respectively connected to the drive circuit 30, the drive signal is input from the drive circuit 30 to the drive terminal 431A, and a predetermined common potential, for example, -3V is input to the common terminal 433B. Is applied.

超音波素子１０から超音波を送信する際、上記のように、上部電極４３３に共通電位が印加され、下部電極４３１に駆動信号が入力される。図２に示すように、各送受信部素子群のそれぞれに対応して駆動端子４３１Ａが設けられているので、各送受信部素子群に対して独立して駆動信号を入力することができる。このため、駆動回路３０から駆動信号を入力する駆動端子４３１Ａを選択することで、各送受信部素子群を遅延駆動させたり、同時駆動させたり、個別駆動させたりすることができる。   When the ultrasonic wave is transmitted from the ultrasonic element 10, the common potential is applied to the upper electrode 433 and the drive signal is input to the lower electrode 431 as described above. As shown in FIG. 2, since drive terminals 431A are provided corresponding to the respective transmitting / receiving element groups, it is possible to independently input drive signals to the respective transmitting / receiving element groups. Therefore, by selecting the drive terminal 431A to which a drive signal is input from the drive circuit 30, it is possible to delay drive each transmitter / receiver element group, simultaneously drive them, or individually drive them.

［封止板４５の構成］
封止板４５は、素子基板４１を補強する機能を有する。この封止板４５は、Ｚ方向から見た際の平面形状が例えば素子基板４１と同形状に形成され、Ｓｉ等の半導体基板や、絶縁体基板により構成される。 [Configuration of sealing plate 45]
The sealing plate 45 has a function of reinforcing the element substrate 41. The sealing plate 45 is formed to have the same planar shape as the element substrate 41 when viewed from the Z direction, and is made of a semiconductor substrate such as Si or an insulating substrate.

この封止板４５には、素子基板４１の対向する面から、支持壁４４に向かって突出する梁部４５１が設けられている。梁部４５１は、例えば、エッチング等により封止板４５と一体に形成されており、アレイ領域Ａｒ内において、±Ｘ側端部間に亘って設けられている。また、梁部４５１は、支持壁４４に対向する取付面４５２を有し、当該取付面４５２が支持壁４４の接合面４４１に接着部材により接合される。これにより、封止板４５のうち振動部４２３に対向する領域では、振動部４２３との間に所定寸法のギャップが設けられ、振動部４２３の振動が阻害されない。   The sealing plate 45 is provided with a beam portion 451 projecting from the facing surface of the element substrate 41 toward the support wall 44. The beam portion 451 is integrally formed with the sealing plate 45 by, for example, etching or the like, and is provided between the ± X side end portions in the array region Ar. The beam portion 451 has a mounting surface 452 facing the support wall 44, and the mounting surface 452 is bonded to the bonding surface 441 of the support wall 44 with an adhesive member. Accordingly, in the region of the sealing plate 45 facing the vibrating portion 423, a gap having a predetermined size is provided between the vibrating portion 423 and the vibrating portion 423, and the vibration of the vibrating portion 423 is not hindered.

本実施形態では、梁部４５１は、Ｙ方向における幅ＷＲが、例えば４０μｍとされている。すなわち、梁部４５１は、幅ＷＲが支持壁４４の幅Ｗ１よりも大きい。   In the present embodiment, the beam portion 451 has a width WR in the Y direction of, for example, 40 μm. That is, the width WR of the beam portion 451 is larger than the width W1 of the support wall 44.

［制御部２０の構成］
制御部２０は、超音波素子１０を駆動させる駆動回路３０と、演算部４０とを含んで構成されている。また、制御部２０には、その他、距離測定装置１を制御するための各種データや各種プログラム等を記憶した記憶部を備えていてもよい。 [Configuration of control unit 20]
The control unit 20 is configured to include a drive circuit 30 that drives the ultrasonic element 10 and an arithmetic unit 40. In addition, the control unit 20 may further include a storage unit that stores various data and various programs for controlling the distance measuring device 1.

駆動回路３０は、超音波素子１０の駆動を制御するためのドライバー回路であり、例えば図１に示すように、基準電位回路３１、切替回路３２、送信回路３３、及び受信回路３４等を備える。
基準電位回路３１は、超音波素子１０の上部電極４３３の共通端子４３３Ｂに接続され、上部電極４３３に基準電位、例えば−３Ｖ等を印加する。
切替回路３２は、アレイ領域Ａｒに配置された各超音波トランスデューサー５０の下部電極４３１の駆動端子４３１Ａと、送信回路３３と、受信回路３４とに接続される。この切替回路３２は、スイッチング回路により構成されており、各駆動端子４３１Ａのそれぞれと送信回路３３とを接続する送信接続、及び、各駆動端子４３１Ａのそれぞれと受信回路３４とを接続する受信接続を切り替える。 The drive circuit 30 is a driver circuit for controlling the drive of the ultrasonic element 10, and includes a reference potential circuit 31, a switching circuit 32, a transmission circuit 33, a reception circuit 34, and the like, as shown in FIG. 1, for example.
The reference potential circuit 31 is connected to the common terminal 433B of the upper electrode 433 of the ultrasonic element 10 and applies a reference potential, such as −3 V, to the upper electrode 433.
The switching circuit 32 is connected to the drive terminal 431A of the lower electrode 431 of each ultrasonic transducer 50 arranged in the array region Ar, the transmission circuit 33, and the reception circuit 34. The switching circuit 32 is composed of a switching circuit, and has a transmission connection for connecting each of the drive terminals 431A and the transmission circuit 33, and a reception connection for connecting each of the drive terminals 431A and the reception circuit 34. Switch.

送信回路３３は、切替回路３２及び演算部４０に接続される。そして、送信回路３３は、切替回路３２が送信接続に切り替えられた際に、演算部４０の制御に基づいて、アレイ領域Ａｒ内の各超音波トランスデューサー５０にパルス波形の駆動信号を出力し、超音波素子１０から超音波を送信させる。   The transmission circuit 33 is connected to the switching circuit 32 and the arithmetic unit 40. Then, when the switching circuit 32 is switched to the transmission connection, the transmission circuit 33 outputs a drive signal having a pulse waveform to each ultrasonic transducer 50 in the array area Ar under the control of the arithmetic unit 40, An ultrasonic wave is transmitted from the ultrasonic element 10.

［超音波素子１０の製造方法］
次に、上述のような超音波素子１０の製造方法について説明する。
図５及び図６は、本実施形態における超音波素子１０の製造工程の概略を示す図である。
図５に示すように、超音波素子１０を製造するには、先ず、素子基板４１及び封止板４５を製造する。
具体的には、Ｓｉの半導体基板の一方の面側を熱酸化処理し、半導体基板の表面にＳｉＯ２膜を形成する。さらに、ＳｉＯ２膜上にＺｒ層を形成し、これを熱酸化処理して、ＺｒＯ２層を形成する。これらのＳｉＯ２及びＺｒＯ２の積層体により支持膜４２を形成する。そして、支持膜４２上に圧電素子４３及び支持壁４４を形成し、その後、半導体基板の他方の面側をエッチングすることにより、開口部４１Ａを有する素子基板４１を形成する。
また、別の半導体基板をエッチングすることにより、梁部４５１を有する封止板４５を形成する。 [Manufacturing Method of Ultrasonic Element 10]
Next, a method of manufacturing the ultrasonic element 10 as described above will be described.
5 and 6 are views showing the outline of the manufacturing process of the ultrasonic element 10 in the present embodiment.
As shown in FIG. 5, in order to manufacture the ultrasonic element 10, first, the element substrate 41 and the sealing plate 45 are manufactured.
Specifically, one surface side of the Si semiconductor substrate is thermally oxidized to form a SiO 2 film on the surface of the semiconductor substrate. Further, a Zr layer is formed on the SiO 2 film, and this is subjected to thermal oxidation treatment to form a ZrO 2 layer. The support film 42 is formed by a laminated body of these SiO 2 and ZrO 2 . Then, the piezoelectric element 43 and the support wall 44 are formed on the support film 42, and then the other surface side of the semiconductor substrate is etched to form the element substrate 41 having the opening 41A.
In addition, the sealing plate 45 having the beam portion 451 is formed by etching another semiconductor substrate.

次に、梁部４５１の取付面４５２に接着部材を転写し、当該接着部材により、梁部４５１と支持壁４４とを接合する。
この際、図６に示すように、封止板４５のアライメントがずれて、梁部４５１と支持壁４４と接合位置が所定の位置からずれることがある。このような場合において、本実施形態では、振動部４２３が、互いに対向する一対の隔壁部４１Ｂと支持壁４４とにより区画されるので、梁部４５１の接合位置がずれたとしても、振動部４２３における圧電素子４３の相対位置は変化することがない。そのため、振動部４２３は、梁部４５１の接合位置に関わらず、所望の超音波特性を発揮することができる。 Next, an adhesive member is transferred to the mounting surface 452 of the beam portion 451 and the beam portion 451 and the support wall 44 are joined by the adhesive member.
At this time, as shown in FIG. 6, the alignment of the sealing plate 45 may be displaced, and the beam 451 and the support wall 44 may be displaced from the predetermined position. In such a case, in the present embodiment, since the vibrating portion 423 is partitioned by the pair of partition wall portions 41B and the support wall 44 that face each other, even if the bonding position of the beam portion 451 is deviated, the vibrating portion 423 is formed. The relative position of the piezoelectric element 43 does not change. Therefore, the vibrating portion 423 can exhibit desired ultrasonic characteristics regardless of the bonding position of the beam portion 451.

また、本実施形態では、梁部４５１は、幅ＷＲが支持壁４４の幅Ｗ１よりも大きい、すなわち、取付面４５２が接合面４４１よりも大きい。これにより、梁部４５１の接合位置がずれたとしても、そのずれを取付面４５２の大きさにより補うことができる。そのため、梁部４５１を支持壁４４に確実に接合させることができる。
さらに、支持壁４４は、幅Ｗ１が梁部４５１の幅ＷＲよりも小さくなるように形成されるので、支持膜４２の幅に対する支持壁４４の相対的な幅を小さくすることができる。すなわち、支持膜４２に占める支持壁４４との接続部分の面積を小さくできるので、支持膜４２に圧電素子４３をより多く配置することができる。 Further, in the present embodiment, the width WR of the beam portion 451 is larger than the width W1 of the support wall 44, that is, the mounting surface 452 is larger than the joint surface 441. Accordingly, even if the joining position of the beam portion 451 is displaced, the displacement can be compensated by the size of the mounting surface 452. Therefore, the beam portion 451 can be reliably joined to the support wall 44.
Further, since the support wall 44 is formed so that the width W1 is smaller than the width WR of the beam portion 451, the relative width of the support wall 44 with respect to the width of the support film 42 can be reduced. That is, since the area of the connection portion of the support film 42 with the support wall 44 can be reduced, more piezoelectric elements 43 can be arranged on the support film 42.

［本実施形態の作用効果］
本実施形態の超音波素子１０は、第一面４１１及び第二面４１２と、第一面４１１から第二面４１２までを貫通する開口部４１Ａと、開口部４１Ａを囲う隔壁部４１Ｂとを有する素子基板４１を備える。素子基板４１の第一面４１１には、開口部４１Ａを覆い、開口部４１Ａに臨む第三面４２１及び第三面４２１と表裏を為す第四面４２２を有する支持膜４２が設けられている。支持膜４２の第四面４２２には、第三面４２１から第四面４２２に向かう膜厚方向から見た平面視において、隔壁部４１Ｂとともに、支持膜４２の開口部４１Ａと重なる領域に振動部４２３を区画する支持壁４４が設けられている。当該振動部４２３には、圧電素子４３が設けられている。そして、支持壁４４には、封止板４５から当該支持壁４４に向かって突出した梁部４５１が接着部材により接合されている。これにより、例えば、封止板４５のアライメントがずれて、梁部４５１と支持壁４４との接合位置がずれたとしても、振動部４２３における圧電素子４３の相対位置は変化することがない。そのため、振動部４２３は、梁部４５１の接合位置に関わらず、所望の超音波特性を発揮することができる。 [Operation and effect of this embodiment]
The ultrasonic element 10 of the present embodiment has a first surface 411 and a second surface 412, an opening 41A that penetrates from the first surface 411 to the second surface 412, and a partition wall portion 41B that surrounds the opening 41A. An element substrate 41 is provided. The first surface 411 of the element substrate 41 is provided with a support film 42 that covers the opening 41A and has a third surface 421 that faces the opening 41A and a fourth surface 422 that faces the third surface 421. The fourth surface 422 of the support film 42 has a vibrating portion in a region overlapping with the partition wall portion 41B and the opening 41A of the support film 42 in a plan view seen from the film thickness direction from the third surface 421 to the fourth surface 422. A support wall 44 that partitions 423 is provided. The vibration element 423 is provided with the piezoelectric element 43. The beam portion 451 protruding from the sealing plate 45 toward the support wall 44 is joined to the support wall 44 by an adhesive member. Thereby, for example, even if the alignment of the sealing plate 45 is deviated and the joining position of the beam portion 451 and the support wall 44 is deviated, the relative position of the piezoelectric element 43 in the vibrating portion 423 does not change. Therefore, the vibrating portion 423 can exhibit desired ultrasonic characteristics regardless of the bonding position of the beam portion 451.

本実施形態では、支持壁４４は、Ｙ方向における幅Ｗ１が梁部４５１の幅ＷＲよりも小さい。そのため、支持膜４２の幅に対する支持壁４４の相対的な幅を小さくすることができる。すなわち、支持膜４２に占める支持壁４４との接続部分の面積を小さくできるので、支持膜４２に圧電素子４３をより多く配置することができる。   In the present embodiment, the width W1 of the support wall 44 in the Y direction is smaller than the width WR of the beam portion 451. Therefore, the relative width of the support wall 44 with respect to the width of the support film 42 can be reduced. That is, since the area of the connection portion of the support film 42 with the support wall 44 can be reduced, more piezoelectric elements 43 can be arranged on the support film 42.

［第二実施形態］
次に、第二実施形態について説明する。
上述した第一実施形態では、支持壁４４は、Ｙ方向における幅Ｗ１が梁部４５１の幅ＷＲよりも小さくなるように形成される例を示した。これに対して、第二実施形態では、支持壁４４Ａは、幅Ｗ２が梁部４５１の幅ＷＲよりも大きくなるように形成される点で、上記第一実施形態と相違する。 [Second embodiment]
Next, a second embodiment will be described.
In the above-described first embodiment, the example in which the support wall 44 is formed so that the width W1 in the Y direction is smaller than the width WR of the beam portion 451 has been shown. On the other hand, in the second embodiment, the support wall 44A is different from the first embodiment in that the width W2 is formed to be larger than the width WR of the beam portion 451.

図７は、第二実施形態の超音波素子１０を模式的に示す断面図である。
図７に示すように、本実施形態では、第一実施形態と同様、支持膜４２の第四面４２２側に、支持壁４４Ａが形成される。支持壁４４Ａは、Ｙ方向における幅Ｗ２が、例えば６０μｍとされている。 FIG. 7: is sectional drawing which shows the ultrasonic element 10 of 2nd embodiment typically.
As shown in FIG. 7, in the present embodiment, similarly to the first embodiment, the support wall 44A is formed on the fourth surface 422 side of the support film 42. The width W2 in the Y direction of the support wall 44A is, for example, 60 μm.

また、封止板４５には、第一実施形態と同様、支持壁４４に向かって突出する梁部４５１が一体に設けられている。そして、当該梁部４５１と支持壁４４とは、接着部材により接合される。
また、梁部４５１は、第一実施形態と同様、Ｙ方向における幅ＷＲが、例えば４０μｍとされている。すなわち、本実施形態では、支持壁４４Ａは、幅Ｗ２が、梁部４５１の幅ＷＲよりも大きくなるように形成される。そのため、支持壁４４Ａの梁部４５１と対向する接合面４４１Ａが大きくなる。 Further, the sealing plate 45 is integrally provided with a beam portion 451 projecting toward the support wall 44, as in the first embodiment. Then, the beam portion 451 and the support wall 44 are joined by an adhesive member.
The beam portion 451 has a width WR in the Y direction of, for example, 40 μm, as in the first embodiment. That is, in the present embodiment, the support wall 44A is formed such that the width W2 is larger than the width WR of the beam portion 451. Therefore, the joint surface 441A facing the beam portion 451 of the support wall 44A becomes large.

［本実施形態の作用効果］
本実施形態では、支持壁４４Ａは、Ｙ方向における幅Ｗ２が梁部４５１の幅ＷＲよりも大きい。そのため、支持壁４４Ａにおける梁部４５１との接合面４４１Ａが大きくなる。これにより、例えば、梁部４５１を接着部材により支持壁４４Ａに接合させる場合、梁部４５１に転写された接着部材は、支持壁４４Ａの接合面４４１Ａに保持されやすくなる。そのため、接着部材が支持壁４４Ａの壁部を伝って圧電素子４３にまで流れだすことを防ぐことができる。したがって、圧電素子４３に接着部材が付着して、所望の周波数特性が得られなくなってしまうことを防ぐことができる。 [Operation and effect of this embodiment]
In the present embodiment, the width W2 of the support wall 44A in the Y direction is larger than the width WR of the beam portion 451. Therefore, the joint surface 441A of the support wall 44A with the beam 451 becomes large. Accordingly, for example, when the beam portion 451 is joined to the support wall 44A by the adhesive member, the adhesive member transferred to the beam portion 451 is easily held on the joint surface 441A of the support wall 44A. Therefore, it is possible to prevent the adhesive member from flowing to the piezoelectric element 43 along the wall portion of the support wall 44A. Therefore, it is possible to prevent the adhesive member from adhering to the piezoelectric element 43 and failing to obtain desired frequency characteristics.

［変形例］
なお、本発明は上述の各実施形態に限定されるものではなく、本発明の目的を達成できる範囲での変形、改良、及び各実施形態を適宜組み合わせる等によって得られる構成は本発明に含まれるものである。 [Modification]
Note that the present invention is not limited to the above-described embodiments, and modifications and improvements within a range in which the object of the present invention can be achieved, and configurations obtained by appropriately combining the embodiments are included in the present invention. It is a thing.

例えば、上記各実施形態において、支持壁４４，４４Ａの幅Ｗ１，Ｗ２と梁部４５１の幅ＷＲとが異なる例を示したが、これに限定されない。例えば、支持壁４４の幅と梁部４５１の幅とが同じであってもよい。   For example, although the widths W1 and W2 of the support walls 44 and 44A and the width WR of the beam portion 451 are different in each of the above-described embodiments, the present invention is not limited to this. For example, the width of the support wall 44 and the width of the beam portion 451 may be the same.

上記各実施形態において、圧電素子４３は、支持膜４２の第四面４２２側に設けられる例を示したが、これに限定されない。例えば、圧電素子４３は、支持膜４２の第三面４２１側に設けられていてもよい。   In each of the above embodiments, the example in which the piezoelectric element 43 is provided on the fourth surface 422 side of the support film 42 has been shown, but the present invention is not limited to this. For example, the piezoelectric element 43 may be provided on the third surface 421 side of the support film 42.

上記各実施形態では、梁部４５１は、封止板４５と一体に形成されている例を示したが、これに限定されない。例えば、梁部４５１と封止板４５とは別部材にて設けられ、封止板４５に梁部４５１が取り付けられていてもよい。   Although the beam portion 451 is formed integrally with the sealing plate 45 in each of the above embodiments, the present invention is not limited to this. For example, the beam portion 451 and the sealing plate 45 may be provided as separate members, and the beam portion 451 may be attached to the sealing plate 45.

上記各実施形態において、アレイ領域Ａｒ内において、梁部４５１が±Ｘ側端部間に亘って設けられる構成を例示したが、これに限定されない。
すなわち、Ｘ方向に複数設けられる開口部４１Ａのうち、所定数の開口部４１Ａを跨いでＸ方向に長手に設けられる構成とすればよい。
例えば、１つの開口部４１Ａの−Ｘ側に配置される隔壁部４１Ｂから、当該開口部４１Ａの＋Ｘ側に配置される隔壁部４１Ｂまでに亘って梁部４５１が設けられる構成としてもよい。この場合、Ｘ方向に対して複数の梁部４５１が設けられる構成となる。 In each of the above-described embodiments, the configuration in which the beam portion 451 is provided between the ± X side end portions in the array region Ar is illustrated, but the configuration is not limited to this.
That is, of the plurality of openings 41A provided in the X direction, the configuration may be such that the openings 41A are provided longitudinally across the predetermined number of openings 41A.
For example, the beam portion 451 may be provided from the partition wall portion 41B arranged on the −X side of the one opening portion 41A to the partition wall portion 41B arranged on the + X side of the opening portion 41A. In this case, a plurality of beam portions 451 are provided in the X direction.

上記各実施形態において、アレイ領域Ａｒ内において、支持壁４４が±Ｘ側端部間に亘って形成される構成を例示したが、これに限定されない。例えば、支持壁４４は、±Ｘ側端部間に亘って形成され、さらに、±Ｙ方向に延出されていてもよい。すなわち、支持壁４４は、−Ｚ方向から見た平面視において、十字状に形成されていてもよい。この場合、±Ｙ方向に延出された部位は、−Ｚ方向から見た平面視において、隔壁部４１Ｂと重なる位置に形成されていてもよい。   In each of the above-described embodiments, the configuration in which the support wall 44 is formed between the ± X side end portions in the array region Ar has been illustrated, but the configuration is not limited to this. For example, the support wall 44 may be formed across the ± X side end portions and may further extend in the ± Y directions. That is, the support wall 44 may be formed in a cross shape when viewed in a plan view from the −Z direction. In this case, the portion extending in the ± Y directions may be formed at a position overlapping the partition wall portion 41B in a plan view seen from the −Z direction.

上記各実施形態では、アレイ領域Ａｒ内にのみ支持壁４４，４４Ａ及び梁部４５１が設けられる構成を例示したが、これに限定されず、例えばアレイ領域Ａｒ外に支持膜４２と封止板４５とを接合する接合部材が設けられてもよい。   In each of the above-described embodiments, the configuration in which the support walls 44 and 44A and the beam portion 451 are provided only in the array region Ar has been described as an example. However, the present invention is not limited to this. For example, the support film 42 and the sealing plate 45 are provided outside the array region Ar. A joining member for joining and may be provided.

上記各実施形態では、梁部４５１と支持壁４４とを接着部材により接合する構成を例示したが、これに限定されない。例えば、超音波接合や摩擦圧接等の接合技術を用いて梁部４５１と支持壁４４とを直接接合する構成であってもよい。   In each of the above-described embodiments, the configuration in which the beam portion 451 and the support wall 44 are joined by the adhesive member is illustrated, but the present invention is not limited to this. For example, the beam portion 451 and the support wall 44 may be directly joined by using a joining technique such as ultrasonic joining or friction welding.

上記各実施形態では、超音波装置の一例として距離測定装置１を例示したが、これに限定されない。例えば、超音波の送受信結果に応じて、構造体の内部断層像を測定する超音波測定装置等に適用することもできる。   In each of the above embodiments, the distance measuring device 1 is illustrated as an example of the ultrasonic device, but the present invention is not limited to this. For example, it can be applied to an ultrasonic measuring device or the like that measures an internal tomographic image of a structure according to the result of transmitting and receiving ultrasonic waves.

その他、本発明の実施の際の具体的な構造は、本発明の目的を達成できる範囲で上記各実施形態及び変形例を適宜組み合わせることで構成してもよく、また他の構造などに適宜変更してもよい。   In addition, a specific structure for carrying out the present invention may be configured by appropriately combining the above-described embodiments and modifications within a range in which the object of the present invention can be achieved, and is appropriately changed to another structure or the like. You may.

１…距離測定装置（超音波装置）、１０…超音波素子、２０…制御部、３０…駆動回路、４１…素子基板、４１Ａ…開口部、４１Ｂ…隔壁部、４２…支持膜、４３…圧電素子、４４，４４Ａ…支持壁、４５…封止板、５０…超音波トランスデューサー、４１１…第一面、４１２…第二面、４２１…第三面、４２２…第四面、４２３…振動部（振動領域）、４３１…下部電極、４３１Ａ…駆動端子、４３２…圧電膜、４３３…上部電極、４３３Ａ…共通電極線、４３３Ｂ…共通端子、４４１，４４１Ａ…接合面、４５１…梁部、４５２…取付面、Ａｒ…アレイ領域。   DESCRIPTION OF SYMBOLS 1 ... Distance measuring device (ultrasonic device), 10 ... Ultrasonic element, 20 ... Control part, 30 ... Drive circuit, 41 ... Element substrate, 41A ... Opening part, 41B ... Partition part, 42 ... Support film, 43 ... Piezoelectric Element, 44, 44A ... Support wall, 45 ... Sealing plate, 50 ... Ultrasonic transducer, 411 ... First surface, 412 ... Second surface, 421 ... Third surface, 422 ... Fourth surface, 423 ... Vibrating section (Vibration region) 431 ... Lower electrode, 431A ... Driving terminal, 432 ... Piezoelectric film, 433 ... Upper electrode, 433A ... Common electrode wire, 433B ... Common terminal, 441, 441A ... Bonding surface, 451 ... Beam section, 452 ... Mounting surface, Ar ... Array area.

Claims (4)

第一面、及び前記第一面と表裏を為す第二面と、前記第一面から前記第二面までを貫通する開口部と、前記開口部を囲う隔壁部とを有する素子基板と、
前記素子基板の前記第一面に設けられて前記開口部を覆い、前記開口部に臨む第三面と、前記第三面と表裏を為す第四面とを有する支持膜と、
前記支持膜の前記第四面に設けられ、前記第三面から前記第四面に向かう膜厚方向から見た平面視において、前記隔壁部とともに、前記支持膜の前記開口部と重なる領域に所定の振動領域を区画する支持壁と、
前記支持膜の、前記隔壁部及び前記支持壁により囲われる前記振動領域に設けられた圧電素子と、
前記支持膜の前記第四面に対向して設けられる封止板と、を備え、
前記封止板は、前記支持壁に対向する位置に、前記支持壁に向かって突出する梁部を有し、前記梁部と前記支持壁とが接合されている
ことを特徴とする超音波素子。 A first surface, and a second surface forming the front and back with the first surface, an element substrate having an opening that penetrates from the first surface to the second surface, and a partition wall that surrounds the opening,
A support film which is provided on the first surface of the element substrate and covers the opening, and which has a third surface facing the opening, and a fourth surface forming a front surface and a back surface of the third surface,
It is provided on the fourth surface of the support film, and in a plan view seen from the film thickness direction from the third surface toward the fourth surface, the partition wall portion and a predetermined area are overlapped with the opening of the support film. A support wall that partitions the vibration area of
A piezoelectric element provided in the vibrating region surrounded by the partition wall portion and the supporting wall of the supporting film;
A sealing plate provided to face the fourth surface of the support film,
The sealing plate has a beam portion projecting toward the support wall at a position facing the support wall, and the beam portion and the support wall are joined together. . 請求項１に記載の超音波素子において、
前記振動領域は、前記隔壁部の縁及び前記支持壁の縁により囲われた領域であり、
前記振動領域を区画する前記支持壁の縁に沿った方向及び前記膜厚方向に直交する前記支持壁の幅は、前記梁部の幅よりも小さい
ことを特徴とする超音波素子。 The ultrasonic element according to claim 1,
The vibration region is a region surrounded by the edge of the partition wall and the edge of the support wall,
The ultrasonic element characterized in that the width of the support wall that is orthogonal to the direction along the edge of the support wall that defines the vibration region and the film thickness direction is smaller than the width of the beam portion. 請求項１に記載の超音波素子において、
前記梁部と前記支持壁とが接着部材により接合されており、
前記振動領域は、前記隔壁部の縁及び前記支持壁の縁により囲われた領域であり、
前記振動領域を区画する前記支持壁の縁に沿った方向及び前記膜厚方向に直交する前記支持壁の幅は、前記梁部の幅よりも大きい
ことを特徴とする超音波素子。 The ultrasonic element according to claim 1,
The beam portion and the support wall are joined by an adhesive member,
The vibration region is a region surrounded by the edge of the partition wall and the edge of the support wall,
An ultrasonic element, wherein a width of the support wall that is orthogonal to a direction along an edge of the support wall that defines the vibration region and the film thickness direction is larger than a width of the beam portion. 請求項１から請求項３のいずれか一項に記載の超音波素子と、
前記圧電素子に対して駆動信号を入力する駆動回路と、
を備えることを特徴とする超音波装置。 The ultrasonic element according to any one of claims 1 to 3,
A drive circuit for inputting a drive signal to the piezoelectric element,
An ultrasonic device comprising:
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JP2017201678A (en) * 2016-04-27 2017-11-09 セイコーエプソン株式会社 Mounting structure, ultrasonic device, ultrasonic probe, ultrasonic apparatus, and electronic equipment
JP2018085612A (en) * 2016-11-22 2018-05-31 セイコーエプソン株式会社 Ultrasonic sensor and piezoelectric device for ultrasonic sensor

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JP2017201678A (en) * 2016-04-27 2017-11-09 セイコーエプソン株式会社 Mounting structure, ultrasonic device, ultrasonic probe, ultrasonic apparatus, and electronic equipment
JP2018085612A (en) * 2016-11-22 2018-05-31 セイコーエプソン株式会社 Ultrasonic sensor and piezoelectric device for ultrasonic sensor

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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