JP2020043140A - Method for manufacturing led display panel and led display panel - Google Patents
Method for manufacturing led display panel and led display panel Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
Description
本発明は、フルカラーのＬＥＤ（light emitting diode）表示パネルの製造方法に関し、特に隣接するＬＥＤ間の混色を防止したＬＥＤ表示パネルの製造方法及びＬＥＤ表示パネルに係るものである。 The present invention relates to a method for manufacturing a full-color LED (light emitting diode) display panel, and more particularly to a method for manufacturing an LED display panel in which color mixture between adjacent LEDs is prevented and an LED display panel.
従来のＬＥＤ表示パネルは、青色（例えば、４５０ｎｍ〜４９５ｎｍ）又は紺青色（例えば、４２０ｎｍ〜４５０ｎｍ）の光を放出するマイクロＬＥＤデバイスのアレイと、このマイクロＬＥＤデバイスのアレイ上に設けられ、マイクロＬＥＤデバイスからの青色発光又は紺青色発光を吸収して、その発光波長を赤色、緑色及び青色の各光に夫々変換する波長変換層（蛍光発光層）のアレイと、を備えたものとなっていた（例えば、特許文献１参照）。 Conventional LED display panels include an array of micro LED devices that emit blue (e.g., 450 nm to 495 nm) or dark blue (e.g., 420 nm to 450 nm) light and a micro LED that is provided on the micro LED device array. An array of wavelength conversion layers (fluorescent light-emitting layers) that absorb blue light or dark blue light emitted from the device and convert the light emission wavelength into red, green, and blue light, respectively. (For example, see Patent Document 1).
しかし、このような従来のＬＥＤ表示パネルにおいて、各色対応の波長変換層（蛍光発光層）を隔てる遮光壁としてブラックマトリクスが使用されているため、例えば波長変換層の層厚が厚い場合に、ブラックマトリクスとして黒色顔料を含有する感光性樹脂を使用したときには、ブラックマトリクスの遮光性能により深部まで感光されず、未露光部分が生じてしまうおそれがあった。そのため、上記遮光壁によって囲まれた各色対応の開口（ピクセル）に、対応色の蛍光色素（顔料又は染料）を含有する蛍光発光レジストを充填する際に、遮光壁の一部が崩れて蛍光発光レジストが隣接する他の色の開口内に漏れ、混色の原因となるおそれがあった。特に、この問題は、高さ対幅のアスペクト比が大きい遮光壁において顕著となる。 However, in such a conventional LED display panel, a black matrix is used as a light shielding wall separating a wavelength conversion layer (fluorescent light emitting layer) corresponding to each color. When a photosensitive resin containing a black pigment is used as the matrix, there is a possibility that the photosensitive resin is not exposed to a deep portion due to the light shielding performance of the black matrix, and an unexposed portion is generated. Therefore, when filling the openings (pixels) corresponding to each color surrounded by the light-shielding wall with a fluorescent light-emitting resist containing a fluorescent dye (pigment or dye) of the corresponding color, a part of the light-shielding wall is broken and the fluorescent light is emitted. There is a possibility that the resist leaks into adjacent openings of other colors, causing color mixing. In particular, this problem is remarkable in a light-shielding wall having a large height-to-width aspect ratio.
そこで、本発明は、このような問題点に対処し、隣接するＬＥＤ間の混色を防止したＬＥＤ表示パネルの製造方法及びＬＥＤ表示パネルを提供することを目的とする。 Accordingly, an object of the present invention is to provide an LED display panel manufacturing method and an LED display panel that address such a problem and prevent color mixing between adjacent LEDs.
上記目的を達成するために、本発明によるＬＥＤ表示パネルの製造方法は、複数のＬＥＤをマトリクス状に配置したＬＥＤアレイ基板上に、前記ＬＥＤを取り囲んで遮光壁を設けたＬＥＤ表示パネルの製造方法であって、透明基板上に透明な感光性樹脂を塗布する第１ステップと、前記感光性樹脂をフォトリソグラフィにより露光及び現像して前記遮光壁の基材となる隔壁を形成する第２ステップと、前記隔壁の表面に前記ＬＥＤから放射される光を反射又は吸収する薄膜を設けて前記遮光壁を形成する第３ステップと、前記ＬＥＤアレイ基板の各ＬＥＤが、隣接する前記遮光壁の間に収まるように前記ＬＥＤアレイ基板と前記透明基板とをアライメントした後、接着剤層を介して前記遮光壁を前記ＬＥＤアレイ基板に接合する第４ステップと、前記透明基板側からレーザ光を照射し、前記遮光壁から前記透明基板を剥離して取り除く第５ステップと、を含むものである。 In order to achieve the above object, a method of manufacturing an LED display panel according to the present invention is directed to a method of manufacturing an LED display panel having a light shielding wall surrounding an LED on an LED array substrate on which a plurality of LEDs are arranged in a matrix. A first step of applying a transparent photosensitive resin on a transparent substrate, and a second step of exposing and developing the photosensitive resin by photolithography to form a partition serving as a base material of the light-shielding wall. A third step of forming a light-shielding wall by providing a thin film for reflecting or absorbing light emitted from the LED on the surface of the partition, and each LED of the LED array substrate is disposed between the adjacent light-shielding walls. A fourth step of aligning the LED array substrate and the transparent substrate so as to fit, and joining the light shielding wall to the LED array substrate via an adhesive layer , Irradiated with laser light from the transparent substrate side, a fifth step of removing by peeling the transparent substrate from the light-shielding wall, is intended to include.
また、本発明によるＬＥＤ表示パネルは、複数のＬＥＤをマトリクス状に配置したＬＥＤアレイ基板上に、前記ＬＥＤを取り囲んで遮光壁を設けたＬＥＤ表示パネルであって、前記遮光壁は、感光性樹脂から成る透明な隔壁の表面に光を反射又は吸収する薄膜を設けると共に、少なくとも前記ＬＥＤを取り囲む開口の隅角部を面取りしたものである。 The LED display panel according to the present invention is an LED display panel in which a plurality of LEDs are arranged in a matrix on an LED array substrate, and a light-shielding wall is provided so as to surround the LED. A thin film that reflects or absorbs light is provided on the surface of a transparent partition wall made of, and at least a corner of an opening surrounding the LED is chamfered.
本発明によれば、遮光壁用の樹脂材料として透明な感光性樹脂を使用することができる。したがって、高さ対幅のアスペクト比が高い遮光壁用として厚みの厚い感光性樹脂が使用された場合であっても樹脂の深部まで完全に感光することができ、従来技術におけるようなブラックマトリクス用の感光性樹脂と違って未露光部が生じることがない。それ故、遮光壁の安定性が増すことにより、遮光壁によって囲まれた開口に例えば蛍光発光レジストを充填する際にも、遮光壁の一部が崩れて蛍光発光レジストが隣接する開口内に漏れ込むおそれがない。これにより、隣接するＬＥＤ間の混色を防止することができる。 According to the present invention, a transparent photosensitive resin can be used as the resin material for the light shielding wall. Therefore, even when a thick photosensitive resin is used for a light-shielding wall having a high height-to-width aspect ratio, it is possible to completely expose the resin to a deep portion of the resin. Unlike the photosensitive resin, no unexposed portion occurs. Therefore, since the stability of the light-shielding wall is increased, when the opening surrounded by the light-shielding wall is filled with, for example, a fluorescent light-emitting resist, a part of the light-shielding wall is broken and the fluorescent light-emitting resist leaks into the adjacent opening. There is no risk of getting in. Thereby, color mixing between adjacent LEDs can be prevented.
また、遮光壁の開口の隅角部を面取りしたことにより、開口内に薄膜を均一に形成することができ、遮光壁の遮光性能を向上することができる。 Further, by chamfering the corners of the opening of the light shielding wall, a thin film can be uniformly formed in the opening, and the light shielding performance of the light shielding wall can be improved.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図１は本発明によるＬＥＤ表示パネルの一実施形態を示す平面図であり、図２は、図１の要部拡大断面図である。このＬＥＤ表示パネルは、映像をカラー表示するもので、ＬＥＤアレイ基板１と、蛍光発光層２と、遮光壁３と、を備えて構成されている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing an embodiment of an LED display panel according to the present invention, and FIG. 2 is an enlarged sectional view of a main part of FIG. This LED display panel is for displaying images in color, and includes an LED array substrate 1, a fluorescent light emitting layer 2, and a light shielding wall 3.
上記ＬＥＤアレイ基板１は、図１に示すように複数のマイクロＬＥＤ４（以下、単に「ＬＥＤ」という）をマトリクス状に配置して備えたものであり、外部に設けた駆動回路から駆動信号を各ＬＥＤ４に供給し、各ＬＥＤ４を個別にオン及びオフ駆動して点灯及び消灯させるための配線を設けたＴＦＴ駆動基板及びフレキシブル基板等を含む表示用配線基板５上に、上記複数のＬＥＤ４を配置したものとなっている。 As shown in FIG. 1, the LED array substrate 1 includes a plurality of micro LEDs 4 (hereinafter, simply referred to as “LEDs”) arranged in a matrix, and receives driving signals from an externally provided driving circuit. The plurality of LEDs 4 are arranged on a display wiring board 5 including a TFT drive board, a flexible board, and the like, which are supplied to the LEDs 4 and provided with wires for turning on and off the LEDs 4 individually to turn on and off. It has become something.
上記ＬＥＤ４は、紫外から青色波長帯の光を放射するものであり、窒化ガリウム（ＧａＮ）を主材料として製造される。なお、波長が例えば２００ｎｍ〜３８０ｎｍの近紫外線を放射するＬＥＤであっても、波長が例えば３８０ｎｍ〜５００ｎｍの青色光を放射するＬＥＤであってもよい。 The LED 4 emits light in the ultraviolet to blue wavelength band, and is manufactured using gallium nitride (GaN) as a main material. The LED may emit near-ultraviolet light having a wavelength of, for example, 200 nm to 380 nm, or may emit an blue light having a wavelength of, for example, 380 nm to 500 nm.
上記ＬＥＤアレイ基板１の各ＬＥＤ４上には、図２に示すように蛍光発光層２が設けられている。この蛍光発光層２は、ＬＥＤ４から放射される励起光によって励起されて対応色の蛍光ＦＬに夫々波長変換するものであり、赤、緑、青の光三原色に対応させて各ＬＥＤ４上に並べて設けられた赤色蛍光発光層２Ｒ、緑色蛍光発光層２Ｇ及び青色蛍光発光層２Ｂで、対応色の蛍光色素６（顔料又は染料）を含有する蛍光発光レジストである。なお、図１においては、各色対応の蛍光発光層２をストライプ状に設けた場合について示しているが、各ＬＥＤ４に個別に対応させて設けてもよい。 On each LED 4 of the LED array substrate 1, a fluorescent light emitting layer 2 is provided as shown in FIG. The fluorescent light-emitting layer 2 is excited by the excitation light emitted from the LED 4 and converts the wavelength of the fluorescent light FL into the corresponding color of the fluorescent light FL. In the obtained red fluorescent light emitting layer 2R, green fluorescent light emitting layer 2G, and blue fluorescent light emitting layer 2B, it is a fluorescent light emitting resist containing a fluorescent dye 6 (pigment or dye) of a corresponding color. Although FIG. 1 shows a case where the fluorescent light emitting layers 2 corresponding to each color are provided in a stripe shape, the fluorescent light emitting layers 2 may be provided corresponding to each LED 4 individually.
詳細には、上記蛍光発光層２は、図２に示すようにレジスト膜中に数十ミクロンオーダーの粒子径の大きい蛍光色素６ａと、数十ナノメートルオーダーの粒子径の小さい蛍光色素６ｂとを混合、分散させたものである。なお、蛍光発光層２を粒子径の大きい蛍光色素６ａだけで構成してもよいが、この場合には、蛍光色素６の充填率が低下し、励起光の表示面側への漏れ光が増してしまう。一方、蛍光発光層２を粒子径の小さい蛍光色素６ｂだけで構成した場合には、耐光性等の安定性が劣るという問題がある。したがって、上記のように蛍光発光層２を粒子径の大きい蛍光色素６ａを主体として粒子径の小さい蛍光色素６ｂを混合させた混合物で構成することにより、励起光の表示面側への漏れ光を抑制すると共に、発光効率を向上させることができる。 Specifically, as shown in FIG. 2, the fluorescent light emitting layer 2 includes a fluorescent dye 6a having a large particle diameter of several tens of microns and a fluorescent dye 6b having a small particle diameter of several tens of nanometers in a resist film. They are mixed and dispersed. The fluorescent light-emitting layer 2 may be composed of only the fluorescent dye 6a having a large particle diameter. However, in this case, the filling rate of the fluorescent dye 6 decreases, and the leakage of the excitation light to the display surface increases. Would. On the other hand, when the fluorescent light emitting layer 2 is composed of only the fluorescent dye 6b having a small particle diameter, there is a problem that stability such as light resistance is poor. Therefore, as described above, the fluorescent light-emitting layer 2 is composed of a mixture of the fluorescent pigment 6a having a large particle diameter and the fluorescent pigment 6b having a small particle diameter, whereby leakage of excitation light to the display surface side can be prevented. In addition to the suppression, the luminous efficiency can be improved.
この場合、粒子径の異なる蛍光色素６の混合比率は、体積比で粒子径の大きい蛍光色素６ａが５０〜９０Ｖｏｌ％に対して、粒子径の小さい蛍光色素６ｂは１０〜５０Ｖｏｌ％とするのが望ましい。 In this case, the mixing ratio of the fluorescent dyes 6 having different particle diameters is such that the fluorescent dye 6a having a large particle diameter by volume ratio is 50 to 90% by volume, and the fluorescent dye 6b having a small particle diameter is 10 to 50% by volume. desirable.
上記ＬＥＤアレイ基板１上には、ＬＥＤ４及び各色対応の蛍光発光層２を取り囲んだ状態で接着剤層（後述の第２接着剤層１７）を介して遮光壁３が設けられている。この遮光壁３は、各色対応の蛍光発光層２を互いに隔てるものであり、透明な感光性樹脂をフォトリソグラフィにより露光及び現像して形成された隔壁７の表面に被着させて、ＬＥＤ４から放射される励起光及び該励起光によって蛍光発光層２が励起されて発光する蛍光ＦＬを反射又は吸収する薄膜８を備えたものである。 On the LED array substrate 1, a light-shielding wall 3 is provided via an adhesive layer (a second adhesive layer 17 to be described later) so as to surround the LED 4 and the fluorescent light emitting layer 2 corresponding to each color. The light-shielding wall 3 separates the fluorescent light-emitting layers 2 corresponding to each color from each other. The light-shielding wall 3 is applied to the surface of the partition wall 7 formed by exposing and developing a transparent photosensitive resin by photolithography, and radiated from the LED 4. And a thin film 8 that reflects or absorbs the excitation light to be emitted and the fluorescent light FL that emits light when the fluorescent light emitting layer 2 is excited by the excitation light.
この場合、上記透明な感光性樹脂の厚みは、該感光性樹脂を加工して形成される遮光壁３のトップ面の位置がＬＥＤアレイ基板１上に配置されたＬＥＤ４のトップ面の位置よりも高くなるように設定するのがよい。詳細には、上記感光性樹脂の厚みは、ＬＥＤ４のトップ面から遮光壁３が約１０μｍ〜約４０μｍだけ突出するような厚みとするのがよい。なお、一実施例において、ＬＥＤアレイ基板１の上面からＬＥＤ４のトップ面までの高さは約１０μｍであるが、これに限定されない。 In this case, the thickness of the transparent photosensitive resin is such that the position of the top surface of the light-shielding wall 3 formed by processing the photosensitive resin is greater than the position of the top surface of the LEDs 4 arranged on the LED array substrate 1. It is better to set it higher. Specifically, the thickness of the photosensitive resin is preferably such that the light shielding wall 3 protrudes from the top surface of the LED 4 by about 10 μm to about 40 μm. In one embodiment, the height from the upper surface of the LED array substrate 1 to the top surface of the LED 4 is about 10 μm, but is not limited to this.
より詳細には、上記透明な感光性樹脂は、上記蛍光発光層２中における粒子径の大きい蛍光色素６ａの充填率を上げるために、隔壁７として高さ対幅のアスペクト比が約１以上を可能とする材料が選択される。より好ましくは、上記アスペクト比が約３以上を可能とする高アスペクト材料であるのが望ましい。このような材料としては、例えば日本化薬株式会社製のＳＵ−８ ３０００や、東京応化工業株式会社製のＴＭＭＲ Ｓ２０００シリーズ等のＭＥＭＳ（Micro Electronic Mechanical System）用永久膜フォトレジストや、新日鉄住友化学株式会社製のＶ−２５９ＰＨＡシリーズ等がある。 More specifically, in order to increase the filling rate of the fluorescent dye 6a having a large particle diameter in the fluorescent light emitting layer 2, the transparent photosensitive resin has a height-to-width aspect ratio of about 1 or more as the partition wall 7. The possible materials are selected. More preferably, it is a high aspect material that allows the aspect ratio to be about 3 or more. Examples of such a material include a permanent film photoresist for MEMS (Micro Electronic Mechanical System) such as SU-83000 manufactured by Nippon Kayaku Co., Ltd., TMMR S2000 series manufactured by Tokyo Ohka Kogyo Co., Ltd., and Nippon Steel Sumitomo Chemical Co., Ltd. There is a V-259PHA series manufactured by Co., Ltd. and the like.
なお、上記感光性樹脂は、一般的に、隔壁７の隣接する開口２０間の幅、隔壁７の高さ及びアスペクト比のうち、少なくとも１つのパラメータに基づいて選択される。 The photosensitive resin is generally selected based on at least one parameter among the width between the adjacent openings 20 of the partition 7, the height of the partition 7, and the aspect ratio.
また、上記隔壁７の表面に設けられた薄膜８は、具体的には、励起光を反射し易いアルミニウムやアルミ合金又はニッケル等の金属膜であり、スパッタリング、蒸着又はめっき等の公知の成膜技術により、励起光及び蛍光ＦＬを十分に遮断できる厚み、例えば、膜厚が約５０ｎｍ以上、望ましくは約１００ｎｍ以上で成膜されている。これにより、遮光壁３に向かって蛍光発光層２を透過した励起光をアルミニウム等の金属膜から成る薄膜８で蛍光発光層２の内側に効率よく反射させ、蛍光発光層２の発光に利用することができ、蛍光発光層２の発光効率を向上することができる。 The thin film 8 provided on the surface of the partition wall 7 is, specifically, a metal film such as aluminum, an aluminum alloy, or nickel, which easily reflects excitation light, and a known film formation such as sputtering, vapor deposition, or plating. According to the technique, the film is formed to have a thickness enough to block the excitation light and the fluorescence FL, for example, a film thickness of about 50 nm or more, preferably about 100 nm or more. Thus, the excitation light transmitted through the fluorescent light emitting layer 2 toward the light shielding wall 3 is efficiently reflected inside the fluorescent light emitting layer 2 by the thin film 8 made of a metal film such as aluminum, and is used for light emission of the fluorescent light emitting layer 2. As a result, the luminous efficiency of the fluorescent light emitting layer 2 can be improved.
図３は図１の領域Ａを拡大して示す平面図である。図３に示すように、少なくともＬＥＤ４を取り囲む遮光壁３の開口２０の隅角部は、面取り２１がされている。これにより、開口２０内に薄膜８を均一に形成することができ、遮光壁３の遮光性能を向上することができる。また、蛍光色素６の充填率を向上することができる。面取り２１の形状は、斜面（Ｃ面取り）であっても丸みを付けた面（Ｒ面取り）であってもよい。 FIG. 3 is an enlarged plan view showing a region A in FIG. As shown in FIG. 3, at least a corner of the opening 20 of the light shielding wall 3 surrounding the LED 4 is chamfered 21. Thereby, the thin film 8 can be formed uniformly in the opening 20 and the light shielding performance of the light shielding wall 3 can be improved. Further, the filling rate of the fluorescent dye 6 can be improved. The shape of the chamfer 21 may be a slope (C chamfer) or a rounded surface (R chamfer).
なお、本明細書において「上」は、ＬＥＤ表示パネルの設置状態に関わらず、常に、表示パネルの表示面側を言う。 In this specification, “upper” always refers to the display surface side of the display panel regardless of the installation state of the LED display panel.
次に、このように構成されたＬＥＤ表示パネルの製造方法について説明する。
本発明によるＬＥＤ表示パネルの製造方法は、複数のＬＥＤ４をマトリクス状に配置したＬＥＤアレイ基板１上に、ＬＥＤ４を取り囲んで遮光壁３を設けたＬＥＤ表示パネルの製造方法であって、上記遮光壁３は、透明な感光性樹脂１６をフォトリソグラフィにより露光及び現像して上記遮光壁３の基材となる隔壁７を形成した後、該隔壁７の表面にＬＥＤ４から放射される光を反射又は吸収する薄膜８を設けて形成されるものである。
Next, a method for manufacturing the LED display panel thus configured will be described.
The method for manufacturing an LED display panel according to the present invention is a method for manufacturing an LED display panel in which a plurality of LEDs 4 are arranged in a matrix on an LED array substrate 1 and a light shielding wall 3 is provided so as to surround the LEDs 4. 3 exposing and developing a transparent photosensitive resin 16 by photolithography to form a partition 7 serving as a base material of the light shielding wall 3, and then reflecting or absorbing light emitted from the LED 4 on the surface of the partition 7. It is formed by providing a thin film 8 to be formed.
以下、ＬＥＤ表示パネルの製造方法の第１の実施形態について詳細に説明する。
先ず、ＬＥＤアレイ基板１の製造について説明する。ＬＥＤアレイ基板１は、複数のＬＥＤ４を駆動するための配線が施された表示用配線基板５上の所定位置に近紫外から青色波長帯の光を放射する複数のＬＥＤ４を上記配線と電気的に接続させた状態で取り付けて製造される。
Hereinafter, the first embodiment of the method for manufacturing the LED display panel will be described in detail.
First, the manufacture of the LED array substrate 1 will be described. The LED array substrate 1 electrically connects a plurality of LEDs 4 that emit light in the near-ultraviolet to blue wavelength band to a predetermined position on a display wiring substrate 5 on which wiring for driving the plurality of LEDs 4 is provided. It is manufactured by being attached in a connected state.
詳細には、先ず、図４（ａ）に示すように光取り出し面４ａ側とは反対側に接点９を備えた、紫外から青色波長帯の光を発光する複数のＬＥＤ４を準備する。より詳細には、複数のＬＥＤ４は、表示用配線基板５上のＬＥＤ配置位置の配列ピッチと同じピッチでマトリクス状に配列して、図示省略のサファイア基板上に設けられている。 Specifically, first, as shown in FIG. 4A, a plurality of LEDs 4 having a contact 9 on the side opposite to the light extraction surface 4a and emitting light in the ultraviolet to blue wavelength band are prepared. More specifically, the plurality of LEDs 4 are arranged in a matrix at the same pitch as the arrangement pitch of the LEDs on the display wiring board 5 and provided on a sapphire substrate (not shown).
次に、図４（ｂ）に示すように表示用配線基板５に設けられた電極パッド１０上に導電性の弾性突起部１１をパターニング形成する。この場合、上記弾性突起部１１は、表面に金やアルミニウム等の良導電性の導電体膜１２を被着させた樹脂製の突起１３や、フォトレジストに銀等の導電性微粒子を添加した導電性フォトレジスト又は導電性高分子を含む導電性フォトレジストで形成した突起１３である。 Next, as shown in FIG. 4B, conductive elastic projections 11 are formed on the electrode pads 10 provided on the display wiring substrate 5 by patterning. In this case, the elastic protrusions 11 may be resin protrusions 13 having a conductive film 12 of good conductivity such as gold or aluminum adhered to the surface thereof, or conductive protrusions obtained by adding conductive fine particles such as silver to a photoresist. The protrusions 13 are formed of a conductive photoresist or a conductive photoresist containing a conductive polymer.
詳細には、弾性突起部１１が表面に導電体膜１２を被着させた突起１３である場合には、表示用配線基板５の上面の全面に例えばフォトスペーサ用のレジストを塗布したのち、フォトマスクを使用して露光し、現像して電極パッド１０上に突起１３をパターニング形成した後、突起１３及び電極パッド１０上に、互いに導通させた状態で金又はアルミニウム等の良導電性の導電体膜１２をスパッタリングや蒸着等により成膜して弾性突起部１１を形成する。 More specifically, when the elastic projection 11 is the projection 13 having the surface covered with the conductive film 12, for example, a resist for a photo spacer is applied to the entire upper surface of the display wiring substrate 5, and then the photolithography is performed. After exposing using a mask and developing to pattern and form the protrusions 13 on the electrode pads 10, a good conductive conductor such as gold or aluminum is placed on the protrusions 13 and the electrode pads 10 in a state where they are electrically connected to each other. The elastic projection 11 is formed by depositing the film 12 by sputtering or vapor deposition.
この場合、導電体膜１２を成膜する前に、フォトリソグラフィにより電極パッド１０上を除く周辺部分にレジスト層を形成し、導電体膜１２の成膜後に溶解液でレジスト層を溶解させると共に、レジスト層上の導電体膜１２をリフトオフするとよい。 In this case, before the conductive film 12 is formed, a resist layer is formed by photolithography in a peripheral portion except on the electrode pad 10, and after the conductive film 12 is formed, the resist layer is dissolved with a solution, The conductor film 12 on the resist layer may be lifted off.
また、弾性突起部１１が導電性フォトレジストで形成した突起１３である場合には、弾性突起部１１は、表示用配線基板５の上面の全面に導電性フォトレジストを所定厚みで塗布したのち、フォトマスクを使用して露光し、現像して電極パッド１０上に突起１３としてパターニング形成される。 When the elastic projection 11 is the projection 13 formed of a conductive photoresist, the elastic projection 11 is formed by applying a conductive photoresist to the entire surface of the upper surface of the display wiring substrate 5 with a predetermined thickness, Exposure is performed using a photomask, developed, and patterned as projections 13 on the electrode pads 10.
このように、上記弾性突起部１１は、フォトリソグラフィプロセスを適用して形成することができるので、位置及び形状に高い精度を確保することができ、ＬＥＤ４の接点９の間隔が１０μｍ程度より狭くなっても容易に形成することができる。したがって、高精細なＬＥＤ表示パネルの製造が可能となる。 As described above, since the elastic projections 11 can be formed by applying a photolithography process, high accuracy can be ensured in the position and the shape, and the interval between the contacts 9 of the LED 4 becomes narrower than about 10 μm. However, it can be easily formed. Therefore, a high-definition LED display panel can be manufactured.
また、弾性突起部１１は、後述するようにＬＥＤ４を押圧してＬＥＤ４の接点９を表示用配線基板５の電極パッド１０に電気接続する際、弾性突起部１１が弾性変形するので、複数のＬＥＤ４を同時に押圧した場合にも、各ＬＥＤ４の各接点９を弾性突起部１１に確実に接触させることができる。したがって、ＬＥＤ４の接点９と電極パッド１０との接触不良が減り、ＬＥＤ表示パネルの製造歩留りを向上することができる。なお、ここでは、弾性突起部１１が表面に導電体膜１２を被着させた突起１３である場合について示している。 The elastic projections 11 are elastically deformed when the contacts 4 of the LEDs 4 are electrically connected to the electrode pads 10 of the display wiring board 5 by pressing the LEDs 4 as described later. Are simultaneously pressed, the contact points 9 of the LEDs 4 can be reliably brought into contact with the elastic projections 11. Therefore, poor contact between the contact 9 of the LED 4 and the electrode pad 10 is reduced, and the production yield of the LED display panel can be improved. Here, the case where the elastic projection 11 is the projection 13 with the conductor film 12 adhered to the surface is shown.
次に、図４（ｃ）に示すように、表示用配線基板５の上面の全面に感光性接着剤を塗布したのち、フォトマスクを使用して露光し、現像して電極パッド１０上の感光性接着剤が除去されるようにパターニングし、第１接着剤層２０を形成する。この場合、塗布される感光性接着剤の厚みは、表示用配線基板５の電極パッド１０と弾性突起部１１、及びＬＥＤ４の接点９を含む高さ寸法よりも大きくなるようにする。 Next, as shown in FIG. 4C, a photosensitive adhesive is applied to the entire upper surface of the display wiring substrate 5, then exposed using a photomask, developed, and developed to expose the photosensitive pad on the electrode pad 10. The first adhesive layer 20 is formed by patterning so that the adhesive is removed. In this case, the thickness of the applied photosensitive adhesive is set to be larger than the height including the electrode pads 10 and the elastic projections 11 of the display wiring substrate 5 and the contacts 9 of the LEDs 4.
続いて、図４（ｄ）に示すように、ＬＥＤ４を、その接点９と表示用配線基板５上の電極パッド１０とが互いに合致するように位置決め配置したのち、ＬＥＤ４の光取り出し面４ａ側を押圧して上記接点９と電極パッド１０とを導電性の弾性突起部１１を介して電気接続させる。さらに、上記第１接着剤層２０を硬化させてＬＥＤ４を表示用配線基板５に接着固定する。その後、公知の技術によりサファイア基板側からレーザ光を照射してサファイア基板をＬＥＤ４から剥離する。このようにして、表示用配線基板５へのＬＥＤ４の実装が終了し、ＬＥＤアレイ基板１が製造される。なお、上記第１接着剤層２０は、熱硬化型であっても、紫外線硬化型であってもよい。 Subsequently, as shown in FIG. 4D, the LED 4 is positioned and arranged so that the contact 9 and the electrode pad 10 on the display wiring board 5 match each other. When pressed, the contact 9 and the electrode pad 10 are electrically connected via the conductive elastic projection 11. Further, the first adhesive layer 20 is cured to bond and fix the LED 4 to the display wiring board 5. Thereafter, the sapphire substrate is separated from the LED 4 by irradiating a laser beam from the sapphire substrate side by a known technique. Thus, the mounting of the LEDs 4 on the display wiring substrate 5 is completed, and the LED array substrate 1 is manufactured. Note that the first adhesive layer 20 may be a thermosetting type or an ultraviolet setting type.
一方、別工程では、遮光壁３が形成される。以下、図５を参照して遮光壁形成工程を説明する。
先ず、図５（ａ）に示すように、透明基板１４上に透明な感光性樹脂１６を塗布する。この場合、感光性樹脂１６の厚みは、後述のＬＥＤアレイ基板１と遮光壁３との組立工程終了後の遮光壁３のトップ面の位置が、ＬＥＤアレイ基板１上に配置されたＬＥＤ４のトップ面の位置よりも突出するように決めるのがよい。
On the other hand, in another step, the light shielding wall 3 is formed. Hereinafter, the light shielding wall forming step will be described with reference to FIG.
First, as shown in FIG. 5A, a transparent photosensitive resin 16 is applied on a transparent substrate. In this case, the thickness of the photosensitive resin 16 depends on the position of the top surface of the light shielding wall 3 after the assembly process of the LED array substrate 1 and the light shielding wall 3 to be described later, and the top of the LED 4 arranged on the LED array substrate 1. It is better to decide so as to protrude from the position of the surface.
具体的には、上記透明な感光性樹脂１６は、これを露光現像して形成される隔壁７の高さがＬＥＤアレイ基板１の上面からＬＥＤ４のトップ面までの高さよりも約１０μｍ〜約４０μｍだけ高くなるような厚みで塗布される。因みに、実施例においては、ＬＥＤアレイ基板１の上面からＬＥＤ４のトップ面までの高さは、約１０μｍであるが、これに限定されない。ここで使用する感光性樹脂１６は、高さ対幅のアスペクト比が約３以上を可能とする高アスペクト材料であり、例えば日本化薬株式会社製のＳＵ−８ ３０００や、東京応化工業株式会社製のＴＭＭＲ Ｓ２０００シリーズ等のＭＥＭＳ（Micro Electronic Mechanical System）用永久膜フォトレジスト等が好適である。これにより、隔壁７（又は遮光壁３）で囲まれた開口２０内に充填される蛍光色素６の充填量を十分に確保することができ、蛍光発光層２の波長変換効率を向上することができる。したがって、高輝度な表示画面を実現することができる。 Specifically, in the transparent photosensitive resin 16, the height of the partition 7 formed by exposing and developing the transparent photosensitive resin 16 is about 10 μm to about 40 μm higher than the height from the upper surface of the LED array substrate 1 to the top surface of the LED 4. It is applied in such a thickness that it becomes higher only. Incidentally, in the embodiment, the height from the upper surface of the LED array substrate 1 to the top surface of the LED 4 is about 10 μm, but is not limited thereto. The photosensitive resin 16 used here is a high aspect material capable of having an aspect ratio of height to width of about 3 or more. For example, SU-83000 manufactured by Nippon Kayaku Co., Ltd., or Tokyo Ohka Kogyo Co., Ltd. For example, a permanent film photoresist for MEMS (Micro Electronic Mechanical System) such as TMMR S2000 series manufactured by Nissan is suitable. Thereby, the filling amount of the fluorescent dye 6 filled in the opening 20 surrounded by the partition wall 7 (or the light shielding wall 3) can be sufficiently ensured, and the wavelength conversion efficiency of the fluorescent light emitting layer 2 can be improved. it can. Therefore, a high-luminance display screen can be realized.
次に、図５（ｂ）に示すように、フォトマスクを使用して感光性樹脂１６を露光及び現像し、例えば図１に示すような同一色の複数のＬＥＤ４を取り囲むようにして、遮光壁３の基材となる隔壁７を、隣接する開口２０との間の幅が例えば約３μｍ〜約１５μｍの範囲内で、好ましくは約７μｍとなるように形成する。これにより、表示画面の高精細化を図ることができる。このとき、遮光壁３の少なくともＬＥＤ４を取り囲む開口２０の隅角部は、図３に示すように面取り２１がされている。 Next, as shown in FIG. 5B, the photosensitive resin 16 is exposed and developed using a photomask, and for example, surrounds a plurality of LEDs 4 of the same color as shown in FIG. The partition wall 7 serving as the base material is formed so that the width between the adjacent openings 20 is, for example, in the range of about 3 μm to about 15 μm, and preferably about 7 μm. As a result, it is possible to increase the definition of the display screen. At this time, at least the corner of the opening 20 surrounding the LED 4 of the light shielding wall 3 is chamfered 21 as shown in FIG.
次いで、図５（ｃ）に示すように、スパッタリング、蒸着又は無電解めっきにより、上記隔壁７の表面にＬＥＤ４から放射される光、詳細にはＬＥＤ４から放射される励起光及び蛍光発光層２が励起光によって励起さて発光する蛍光ＦＬを反射又は吸収する薄膜８、例えばアルミニウム、アルミ合金又はニッケル等の金属膜を設けて遮光壁３を形成する。これにより、遮光壁形成工程が終了する。 Next, as shown in FIG. 5C, the light emitted from the LED 4, specifically, the excitation light and the fluorescent light emitting layer 2 emitted from the LED 4 are formed on the surface of the partition wall 7 by sputtering, vapor deposition, or electroless plating. The light shielding wall 3 is formed by providing a thin film 8 that reflects or absorbs the fluorescent light FL that emits light when excited by the excitation light, for example, a metal film such as aluminum, an aluminum alloy, or nickel. Thereby, the light shielding wall forming step is completed.
遮光壁３の薄膜８が励起光を反射する金属膜である場合には、遮光壁３に向かって蛍光発光層２を透過した励起光をアルミニウムやニッケル等の金属膜で蛍光発光層２の内側に反射させ、蛍光発光層２の発光に利用することができ、蛍光発光層２の発光効率を向上することができる。 When the thin film 8 of the light-shielding wall 3 is a metal film that reflects the excitation light, the excitation light transmitted through the fluorescent light-emitting layer 2 toward the light-shielding wall 3 is coated with a metal film of aluminum, nickel, or the like inside the fluorescent light-emitting layer 2. And can be used for light emission of the fluorescent light emitting layer 2, and the light emitting efficiency of the fluorescent light emitting layer 2 can be improved.
続いて、ＬＥＤアレイ基板１と遮光壁３との組立工程について説明する。
先ず、図６（ａ）に示すように、ＬＥＤアレイ基板１上のＬＥＤ４の周りに熱硬化型又はＵＶ硬化型の接着剤を塗布して第２接着剤層１７を形成する。接着剤の塗布は、ディスペンサーを使用し又はインクジェットにより行ってもよく、又は感光性接着剤をＬＥＤアレイ基板１の全面に塗布した後、フォトマスクを使用して露光及び現像し、ＬＥＤ４の周りの表示用配線基板５上に第２接着剤層１７を形成してもよい。
Subsequently, an assembly process of the LED array substrate 1 and the light shielding wall 3 will be described.
First, as shown in FIG. 6A, a thermosetting or UV-curable adhesive is applied around the LEDs 4 on the LED array substrate 1 to form the second adhesive layer 17. The application of the adhesive may be performed using a dispenser or by ink jet, or after applying a photosensitive adhesive to the entire surface of the LED array substrate 1, exposing and developing using a photomask, The second adhesive layer 17 may be formed on the display wiring substrate 5.
次に、図６（ｂ）に示すように、遮光壁３を形成した透明基板１４の遮光壁３側をＬＥＤアレイ基板１のＬＥＤ配置面に対面させた状態で、各基板に予め形成された図示省略のアライメントマークを使用してＬＥＤアレイ基板１の各ＬＥＤ４が、隣接する遮光壁３の間に収まるようにＬＥＤアレイ基板１と透明基板１４とをアライメントする。 Next, as shown in FIG. 6B, the light-shielding wall 3 side of the transparent substrate 14 on which the light-shielding wall 3 is formed is formed on each substrate in a state where the light-shielding wall 3 side faces the LED arrangement surface of the LED array substrate 1. Using an alignment mark (not shown), the LED array substrate 1 and the transparent substrate 14 are aligned so that each LED 4 of the LED array substrate 1 fits between the adjacent light shielding walls 3.
次いで、図６（ｃ）に示すように、透明基板１４を矢印方向に押圧して遮光壁３の先端部をＬＥＤアレイ基板１の第２接着剤層１７に密着させた状態で硬化させて遮光壁３をＬＥＤアレイ基板１に接合する。第２接着剤層１７の硬化は、使用する接着剤の種類に応じて熱硬化又はＵＶ硬化若しくは熱及びＵＶを併用した硬化で行われる。 Next, as shown in FIG. 6C, the transparent substrate 14 is pressed in the direction of the arrow to cure the light-shielding wall 3 in a state in which the front end of the light-shielding wall 3 is in close contact with the second adhesive layer 17 of the LED array substrate 1, and light is shielded. The wall 3 is joined to the LED array substrate 1. The curing of the second adhesive layer 17 is performed by thermal curing, UV curing, or curing using both heat and UV depending on the type of the adhesive to be used.
続いて、図７（ａ）に示すように、透明基板１４側から、例えばＹＡＧレーザやエキシマレーザを使用して紫外領域の波長を有するレーザ光を照射し、透明基板１４との界面の遮光壁３表面をアブレートする。このとき使用するレーザ光は、一方向に長軸を有するラインビームであり、透明基板１４と遮光壁３との界面に集光させた状態で、ラインビームの長軸に交差する方向にて透明基板１４の一方端から他方端に向かって移動される。 Subsequently, as shown in FIG. 7A, laser light having a wavelength in the ultraviolet region is irradiated from the transparent substrate 14 side using, for example, a YAG laser or an excimer laser, and a light shielding wall at the interface with the transparent substrate 14 is irradiated. 3 Ablate the surface. The laser beam used at this time is a line beam having a long axis in one direction, and is focused on the interface between the transparent substrate 14 and the light shielding wall 3 and is transparent in a direction crossing the long axis of the line beam. The substrate 14 is moved from one end to the other end.
次に、図７（ｂ）に示すように、透明基板１４が遮光壁３から矢印方向に剥離される。これにより、ＬＥＤアレイ基板１には、表面に薄膜８を被着させた遮光壁３が残ることになる。なお、遮光壁３に囲まれた開口２０に対応する透明基板１４の表面には、薄膜８の一部が付着しており、ＬＥＤ４上から薄膜８が取り除かれる。 Next, as shown in FIG. 7B, the transparent substrate 14 is peeled off from the light shielding wall 3 in the direction of the arrow. As a result, the light shielding wall 3 having the thin film 8 adhered to the surface of the LED array substrate 1 remains. Note that a part of the thin film 8 is attached to the surface of the transparent substrate 14 corresponding to the opening 20 surrounded by the light shielding wall 3, and the thin film 8 is removed from the LED 4.
その後、図８に示すように、遮光壁３で囲まれた各色対応の開口２０内に、対応色の蛍光色素６（顔料又は染料）を含有する蛍光発光レジストを例えばインクジェットにより充填した後、これを乾燥させて蛍光発光層２を形成する。又はＬＥＤアレイ基板１の全面に蛍光発光レジストを塗布した後、フォトマスクを使用して露光及び現像する工程を各色対応の蛍光発光レジストに対して実行し、遮光壁３で囲まれた各色対応の開口２０内に対応色の蛍光発光層２を形成してもよい。このようにして、図１及び図２に示すような、ＬＥＤ表示パネルが完成する。 Thereafter, as shown in FIG. 8, a fluorescent light-emitting resist containing a fluorescent dye 6 (pigment or dye) of a corresponding color is filled in the opening 20 corresponding to each color surrounded by the light-shielding wall 3 by, for example, ink jet. Is dried to form the fluorescent light emitting layer 2. Alternatively, after applying a fluorescent light-emitting resist to the entire surface of the LED array substrate 1, a step of exposing and developing using a photomask is performed on the fluorescent light-emitting resist corresponding to each color, and the corresponding color corresponding to The fluorescent light emitting layer 2 of the corresponding color may be formed in the opening 20. Thus, the LED display panel as shown in FIGS. 1 and 2 is completed.
次に、ＬＥＤ表示パネルの製造方法の第２の実施形態について説明する。なお、ＬＥＤアレイ基板の製造工程及び蛍光色素の充填工程は、第１の実施形態と同じであるため、ここでは、第１の実施形態と異なる遮光壁形成工程及びＬＥＤアレイ基板と遮光壁との組立工程について説明する。 Next, a second embodiment of a method for manufacturing an LED display panel will be described. Since the manufacturing process of the LED array substrate and the filling process of the fluorescent dye are the same as those in the first embodiment, here, the light shielding wall forming process and the light shielding wall forming process different from those of the first embodiment are described. The assembling process will be described.
図９は本発明によるＬＥＤ表示パネルの製造方法の第２の実施形態の遮光壁形成工程を示す説明図である。
先ず、図９（ａ）に示すように、第１の実施形態と同様にして透明基板１４上に透明な感光性樹脂１６を塗布する。具体的には、上記透明な感光性樹脂１６は、これを露光現像して形成される隔壁７の高さがＬＥＤアレイ基板１の上面からＬＥＤ４のトップ面までの高さよりも約１０μｍ〜約４０μｍだけ高くなるような厚みで塗布される。前述したように、実施例においては、ＬＥＤアレイ基板１の上面からＬＥＤ４のトップ面までの高さは約１０μｍであるが、これに限定されない。ここで使用する感光性樹脂１６は、高さ対幅のアスペクト比が約１以上を可能とする材料が選択される。より好ましくは、上記感光性樹脂１６は、アスペクト比が約３以上を可能とする高アスペクト材料が望ましく、例えば日本化薬株式会社製のＳＵ−８ ３０００や、東京応化工業株式会社製のＴＭＭＲ Ｓ２０００シリーズ等のＭＥＭＳ（Micro Electronic Mechanical System）用永久膜フォトレジストが好適である。
FIG. 9 is an explanatory view showing a light shielding wall forming step of the second embodiment of the method for manufacturing an LED display panel according to the present invention.
First, as shown in FIG. 9A, a transparent photosensitive resin 16 is applied on a transparent substrate 14 in the same manner as in the first embodiment. Specifically, in the transparent photosensitive resin 16, the height of the partition 7 formed by exposing and developing the transparent photosensitive resin 16 is about 10 μm to about 40 μm higher than the height from the upper surface of the LED array substrate 1 to the top surface of the LED 4. It is applied in such a thickness that it becomes higher only. As described above, in the embodiment, the height from the upper surface of the LED array substrate 1 to the top surface of the LED 4 is about 10 μm, but is not limited thereto. As the photosensitive resin 16 used here, a material that allows an aspect ratio of height to width of about 1 or more is selected. More preferably, the photosensitive resin 16 is desirably a high aspect material capable of having an aspect ratio of about 3 or more. For example, SU-83000 manufactured by Nippon Kayaku Co., Ltd. or TMMR S2000 manufactured by Tokyo Ohka Kogyo Co., Ltd. A permanent film photoresist for MEMS (Micro Electronic Mechanical System) such as a series is suitable.
次に、図９（ｂ）に示すように、フォトマスクを使用して感光性樹脂１６を露光及び現像し、例えば図１に示すような同一色の複数のＬＥＤ４を取り囲むようにして、遮光壁３の基材となる隔壁７を、隣接する開口２０との間の幅が例えば約３μｍ〜約１５μｍの範囲内で、好ましくは約７μｍとなるように形成する。このとき、遮光壁３の少なくともＬＥＤ４を取り囲む開口２０の隅角部は、図３に示すように面取り２１がされている。 Next, as shown in FIG. 9B, the photosensitive resin 16 is exposed and developed using a photomask, and for example, surrounds a plurality of LEDs 4 of the same color as shown in FIG. The partition wall 7 serving as the base material is formed so that the width between the adjacent openings 20 is, for example, in the range of about 3 μm to about 15 μm, and preferably about 7 μm. At this time, at least the corner of the opening 20 surrounding the LED 4 of the light shielding wall 3 is chamfered 21 as shown in FIG.
次いで、図９（ｃ）に示すように、スパッタリング、蒸着又は無電解めっきにより、上記隔壁７の表面にＬＥＤ４から放射される光、詳細にはＬＥＤ４から放射される励起光及び蛍光発光層２が励起光によって励起さて発光する蛍光ＦＬを反射又は吸収する薄膜８、例えばアルミニウム、アルミ合金又はニッケル等の金属膜を設けて遮光壁３を形成する。 Next, as shown in FIG. 9C, the light emitted from the LED 4, specifically, the excitation light and the fluorescent light emitting layer 2 emitted from the LED 4 are formed on the surface of the partition wall 7 by sputtering, vapor deposition, or electroless plating. The light shielding wall 3 is formed by providing a thin film 8 that reflects or absorbs the fluorescent light FL that emits light when excited by the excitation light, for example, a metal film such as aluminum, an aluminum alloy, or nickel.
続いて、図９（ｄ）に示すように、遮光壁３側から例えば可視領域又は紫外領域のレーザ光を照射し、遮光壁３のトップ面及び遮光壁３に囲まれた開口２０内の透明基板１４の表面に被着した薄膜８を除去する。これにより、遮光壁形成工程が終了する。 Subsequently, as shown in FIG. 9D, for example, a laser beam in a visible region or an ultraviolet region is irradiated from the side of the light shielding wall 3, and the transparent surface inside the opening 20 surrounded by the top surface of the light shielding wall 3 and the light shielding wall 3. The thin film 8 deposited on the surface of the substrate 14 is removed. Thereby, the light shielding wall forming step is completed.
続いて、ＬＥＤアレイ基板１と遮光壁３との組立工程について説明する。
先ず、図１０（ａ）に示すように、ＬＥＤアレイ基板１上のＬＥＤ４の周りに熱硬化型又はＵＶ硬化型の接着剤を塗布して第２接着剤層１７を形成する。接着剤の塗布は、ディスペンサーを使用し又はインクジェットにより行ってもよく、又は感光性接着剤をＬＥＤアレイ基板１の全面に塗布した後、フォトマスクを使用して露光及び現像し、ＬＥＤ４の周りの表示用配線基板５上に第２接着剤層１７を形成してもよい。
Subsequently, an assembly process of the LED array substrate 1 and the light shielding wall 3 will be described.
First, as shown in FIG. 10A, a thermosetting or UV curable adhesive is applied around the LEDs 4 on the LED array substrate 1 to form the second adhesive layer 17. The application of the adhesive may be performed using a dispenser or by ink jet, or after applying a photosensitive adhesive to the entire surface of the LED array substrate 1, exposing and developing using a photomask, The second adhesive layer 17 may be formed on the display wiring substrate 5.
次に、図１０（ｂ）に示すように、遮光壁３を形成した透明基板１４の遮光壁３側をＬＥＤアレイ基板１のＬＥＤ配置面に対面させた状態で、各基板に予め形成された図示省略のアライメントマークを使用してＬＥＤアレイ基板１の各ＬＥＤ４が、隣接する遮光壁３の間に収まるようにＬＥＤアレイ基板１と透明基板１４とをアライメントする。 Next, as shown in FIG. 10B, the transparent substrate 14 on which the light shielding wall 3 was formed was formed on each substrate in a state where the light shielding wall 3 side faced the LED arrangement surface of the LED array substrate 1. Using an alignment mark (not shown), the LED array substrate 1 and the transparent substrate 14 are aligned so that each LED 4 of the LED array substrate 1 fits between the adjacent light shielding walls 3.
次いで、図１０（ｃ）に示すように、透明基板１４を矢印方向に押圧して遮光壁３の先端部をＬＥＤアレイ基板１の第２接着剤層１７に密着させた状態で硬化させて遮光壁３をＬＥＤアレイ基板１に接合する。第２接着剤層１７の硬化は、使用する接着剤の種類に応じて熱硬化又はＵＶ硬化若しくは熱及びＵＶを併用した硬化で行われる。 Next, as shown in FIG. 10C, the transparent substrate 14 is pressed in the direction of the arrow to cure the light-shielding wall 3 in a state where the front end of the light-shielding wall 3 is in close contact with the second adhesive layer 17 of the LED array substrate 1, and light is shielded. The wall 3 is joined to the LED array substrate 1. The curing of the second adhesive layer 17 is performed by thermal curing, UV curing, or curing using both heat and UV depending on the type of the adhesive to be used.
続いて、図１１（ａ）に示すように、透明基板１４側から、例えばＹＡＧレーザやエキシマレーザを使用して紫外領域の波長を有するレーザ光を照射し、透明基板１４との界面の遮光壁３表面をアブレートする。このとき使用するレーザ光は、一方向に長軸を有するラインビームであり、透明基板１４と遮光壁３の界面に集光させた状態で、ラインビームの長軸に交差する方向にて透明基板１４の一方端から他方端に向かって移動される。 Subsequently, as shown in FIG. 11A, laser light having a wavelength in the ultraviolet region is irradiated from the transparent substrate 14 side using, for example, a YAG laser or an excimer laser, and a light shielding wall at the interface with the transparent substrate 14 is irradiated. 3 Ablate the surface. The laser beam used at this time is a line beam having a long axis in one direction. The laser beam is focused on the interface between the transparent substrate 14 and the light shielding wall 3 and is disposed in a direction intersecting the long axis of the line beam. 14 is moved from one end to the other end.
次に、図１１（ｂ）に示すように、透明基板１４が遮光壁３から矢印方向に剥離される。これにより、ＬＥＤアレイ基板１には、表面に薄膜８を被着させた遮光壁３が残ることになる。この場合、遮光壁３の隔壁７は、第１の実施形態と違って、第２接着剤層１７を介してＬＥＤアレイ基板１に直接接合されるため、遮光壁３とＬＥＤアレイ基板１との接合強度が増し、遮光壁３がＬＥＤアレイ基板１から剥離するおそれがない。 Next, as shown in FIG. 11B, the transparent substrate 14 is peeled off from the light shielding wall 3 in the direction of the arrow. As a result, the light shielding wall 3 having the thin film 8 adhered to the surface of the LED array substrate 1 remains. In this case, unlike the first embodiment, the partition wall 7 of the light shielding wall 3 is directly bonded to the LED array substrate 1 via the second adhesive layer 17, so that the light shielding wall 3 and the LED array substrate 1 The bonding strength is increased, and there is no possibility that the light shielding wall 3 is separated from the LED array substrate 1.
その後、図８に示す第１の実施形態と同様にして、遮光壁３に囲まれた各色対応の開口２０内に各色対応の蛍光色素６が充填され、ＬＥＤ表示パネルが完成する。 Thereafter, in the same manner as in the first embodiment shown in FIG. 8, the fluorescent dyes 6 corresponding to the respective colors are filled in the openings 20 corresponding to the respective colors surrounded by the light shielding walls 3, and the LED display panel is completed.
図１２はＬＥＤ表示パネルに形成される遮光壁３の変形例を示す要部拡大平面図であり、（ａ）は第１変形例を示し、（ｂ）は第２変形例を示す。
図１２（ａ）に示す第１変形例においては、隣接する三色対応のＬＥＤ４及び蛍光発光層２を１画素１８として、直交する第１画素配列方向（以下、「Ｘ方向」という）及び第２画素配列方向（以下、「Ｙ方向」という）のうち、Ｘ方向の画素１８間に位置する遮光壁３に、Ｘ方向と交差する隙間１９を設けたものである。
FIG. 12 is an enlarged plan view of a main part showing a modification of the light shielding wall 3 formed on the LED display panel. FIG. 12 (a) shows a first modification, and FIG. 12 (b) shows a second modification.
In the first modified example shown in FIG. 12A, the adjacent three-color corresponding LED 4 and fluorescent light emitting layer 2 are regarded as one pixel 18, and the orthogonal first pixel arrangement direction (hereinafter referred to as “X direction”) and In the two-pixel array direction (hereinafter, referred to as “Y direction”), a gap 19 intersecting with the X direction is provided in the light shielding wall 3 located between the pixels 18 in the X direction.
また、図１２（ｂ）に示す第２変形例においては、Ｘ方向の画素１８間に位置する遮光壁３に、Ｘ方向と交差する隙間１９を設けると共に、Ｙ方向の画素１８間に位置する遮光壁３に、Ｙ方向と交差する隙間１９を設けたものである。 In the second modification shown in FIG. 12B, a gap 19 intersecting the X direction is provided in the light shielding wall 3 located between the pixels 18 in the X direction, and the light shielding wall 3 is located between the pixels 18 in the Y direction. The light shielding wall 3 is provided with a gap 19 intersecting with the Y direction.
これにより、例えばＬＥＤアレイ基板１の表示用配線基板５が可撓性を有するフレキシブル基板である場合に、図１２（ａ）に示す第１変形例のＬＥＤ表示パネルは、Ｘ方向に容易に丸めることができる。また、図１２（ｂ）に示す第２変形例のＬＥＤ表示パネルは、Ｘ方向及びＹ方向の何れの方向にも容易に丸めることができる。したがって、ＬＥＤ表示パネルの持ち運びが容易になる。 Thereby, for example, when the display wiring substrate 5 of the LED array substrate 1 is a flexible substrate having flexibility, the LED display panel of the first modified example shown in FIG. 12A is easily rolled in the X direction. be able to. Further, the LED display panel of the second modification shown in FIG. 12B can be easily rounded in any of the X direction and the Y direction. Therefore, the LED display panel can be easily carried.
なお、上記実施形態においては、遮光壁３の開口２０の角隅部に面取り２１を設ける場合について説明したが、本発明はこれに限られず、図１３に示す領域Ｂのように、遮光壁３の外側面の角隅部に面取り２１をさらに設けてもよい。これにより、遮光壁３の破損を防止することができる。 In the above embodiment, the case where the chamfer 21 is provided at the corner of the opening 20 of the light-shielding wall 3 has been described. However, the present invention is not limited to this, and the light-shielding wall 3 may be provided as shown in a region B in FIG. A chamfer 21 may be further provided at a corner of the outer side surface of the. Thereby, breakage of the light shielding wall 3 can be prevented.
また、上記実施形態においては、透明基板１４上に形成した遮光壁３をＬＥＤアレイ基板１上に転写する場合について説明したが、本発明はこれに限られず、遮光壁３をＬＥＤアレイ基板１上に直接形成してもよい。この場合は、ＬＥＤアレイ基板１上に透明な感光性樹脂１６を塗布した後、フォトマスクを使用して露光及び現像し、ＬＥＤ４を取り囲むように隔壁７を形成し、隔壁７側から成膜して隔壁７の表面に薄膜８を形成し、レーザ光の照射によりＬＥＤ４上及びその周りに被着した薄膜８を除去するとよい。 In the above embodiment, the case where the light shielding wall 3 formed on the transparent substrate 14 is transferred onto the LED array substrate 1 has been described. However, the present invention is not limited to this. May be formed directly. In this case, after applying a transparent photosensitive resin 16 on the LED array substrate 1, exposure and development are performed using a photomask, the partition 7 is formed so as to surround the LED 4, and a film is formed from the partition 7 side. It is preferable to form a thin film 8 on the surface of the partition wall 7 and irradiate a laser beam to remove the thin film 8 deposited on and around the LED 4.
さらに、以上の説明においては、複数のＬＥＤ４が紫外から青色波長帯の光を放射するものであり、光三原色に対応させて複数の上記ＬＥＤ４上に、各ＬＥＤ４から放射される励起光によって励起されて対応色の蛍光に夫々波長変換する蛍光発光層２を設けたものである場合について説明したが、本発明はこれに限られず、複数のＬＥＤ４は夫々、赤、緑及び青色の光を個別に発光するものであってもよい。又は、三色対応のＬＥＤ４のうち、一部のＬＥＤ４が紫外から青色波長帯の光を放射するＬＥＤ４及び蛍光発光層２の組み合わせであってもよい。 Further, in the above description, the plurality of LEDs 4 emit light in the ultraviolet to blue wavelength band, and are excited by the excitation light emitted from each LED 4 on the plurality of LEDs 4 corresponding to the three primary colors of light. However, the present invention is not limited to this, and the plurality of LEDs 4 individually emit red, green, and blue light, respectively. It may emit light. Alternatively, among the LEDs 4 corresponding to three colors, some of the LEDs 4 may be a combination of the LED 4 that emits light in the ultraviolet to blue wavelength band and the fluorescent light emitting layer 2.
１…ＬＥＤアレイ基板
２…蛍光発光層
３…遮光壁
４…ＬＥＤ
７…隔壁
８…薄膜
１４…透明基板
１６…感光性樹脂
１７…第２接着剤層（接着剤層）
１８…画素
１９…隙間
２０…開口
２１…面取り
Ｘ…第１画素配列方向
Ｙ…第２画素配列方向
REFERENCE SIGNS LIST 1 LED array substrate 2 Fluorescent layer 3 Shielding wall 4 LED
7 Partition wall 8 Thin film 14 Transparent substrate 16 Photosensitive resin 17 Second adhesive layer (adhesive layer)
18 ... pixel 19 ... gap 20 ... opening 21 ... chamfer X ... 1st pixel arrangement direction Y ... 2nd pixel arrangement direction
Claims (12)
透明基板上に透明な感光性樹脂を塗布する第１ステップと、
前記感光性樹脂をフォトリソグラフィにより露光及び現像して前記遮光壁の基材となる隔壁を形成する第２ステップと、
前記隔壁の表面に前記ＬＥＤから放射される光を反射又は吸収する薄膜を設けて前記遮光壁を形成する第３ステップと、
前記ＬＥＤアレイ基板の各ＬＥＤが、隣接する前記遮光壁の間に収まるように前記ＬＥＤアレイ基板と前記透明基板とをアライメントした後、接着剤層を介して前記遮光壁を前記ＬＥＤアレイ基板に接合する第４ステップと、
前記透明基板側からレーザ光を照射し、前記遮光壁から前記透明基板を剥離して取り除く第５ステップと、
を含むことを特徴とするＬＥＤ表示パネルの製造方法。 A method for manufacturing an LED display panel, comprising: a plurality of LEDs arranged in a matrix on an LED array substrate;
A first step of applying a transparent photosensitive resin on a transparent substrate;
A second step of exposing and developing the photosensitive resin by photolithography to form a partition serving as a base material of the light shielding wall;
A third step of forming a light-shielding wall by providing a thin film for reflecting or absorbing light emitted from the LED on the surface of the partition wall;
After aligning the LED array substrate and the transparent substrate so that each LED of the LED array substrate fits between the adjacent light shielding walls, the light shielding wall is bonded to the LED array substrate via an adhesive layer. A fourth step to
A fifth step of irradiating a laser beam from the transparent substrate side and peeling and removing the transparent substrate from the light shielding wall;
A method for manufacturing an LED display panel, comprising:
光三原色に対応させて複数の前記ＬＥＤ上に、各ＬＥＤから放射される励起光によって励起されて対応色の蛍光に夫々波長変換する蛍光発光層を設けたことを特徴とする請求項１又は２記載のＬＥＤ表示パネルの製造方法。 The plurality of LEDs emit light in the ultraviolet to blue wavelength band,
3. A fluorescent light emitting layer provided on a plurality of LEDs corresponding to three primary colors of light, the fluorescent light emitting layers being excited by excitation light radiated from each LED and converting the wavelength into fluorescent light of a corresponding color, respectively. The manufacturing method of the LED display panel described.
前記遮光壁は、感光性樹脂から成る透明な隔壁の表面に光を反射又は吸収する薄膜を設けると共に、少なくとも前記ＬＥＤを取り囲む開口の隅角部を面取りしたことを特徴とするＬＥＤ表示パネル。 An LED display panel having a light-shielding wall surrounding an LED on an LED array substrate on which a plurality of LEDs are arranged in a matrix,
An LED display panel, wherein the light shielding wall is provided with a thin film for reflecting or absorbing light on a surface of a transparent partition wall made of a photosensitive resin, and at least a corner of an opening surrounding the LED is chamfered.
前記遮光壁に取り囲まれた前記開口内には、光三原色に対応させて複数の前記ＬＥＤ上に、該ＬＥＤから放射される励起光によって励起されて対応色の蛍光に夫々波長変換する複数の蛍光発光層を備えており、
前記遮光壁の前記薄膜は、前記励起光及び前記蛍光を反射又は吸収するものである、
ことを特徴とする請求項８記載のＬＥＤ表示パネル。 The LED array substrate has a plurality of LEDs that emit light in the blue to blue wavelength band arranged in a matrix on the substrate,
In the opening surrounded by the light-shielding wall, a plurality of fluorescent lights which are excited by excitation light emitted from the LEDs and convert wavelengths to fluorescent lights of the corresponding colors are respectively provided on the plurality of LEDs corresponding to the three primary colors of light. It has a light emitting layer,
The thin film of the light-shielding wall reflects or absorbs the excitation light and the fluorescence,
The LED display panel according to claim 8, wherein:
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| JP2018167241A JP2020043140A (en) | 2018-09-06 | 2018-09-06 | Method for manufacturing led display panel and led display panel |
| KR1020217004277A KR20210055676A (en) | 2018-09-06 | 2019-07-29 | LED display panel manufacturing method and LED display panel |
| PCT/JP2019/029601 WO2020049896A1 (en) | 2018-09-06 | 2019-07-29 | Method for manufacturing led display panel, and led display panel |
| CN201980057901.5A CN112655099A (en) | 2018-09-06 | 2019-07-29 | LED display panel manufacturing method and LED display panel |
| TW108128223A TW202025474A (en) | 2018-09-06 | 2019-08-08 | Method for manufacturing led display panel and led display panel |
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| WO2024024192A1 (en) * | 2022-07-28 | 2024-02-01 | デクセリアルズ株式会社 | Manufacturing method for light emitting device, and black transfer film |
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| CN111681985B (en) * | 2020-06-23 | 2023-06-23 | 广东聚华印刷显示技术有限公司 | Display panel peeling method |
| CN112164334B (en) * | 2020-10-27 | 2022-08-26 | 湖北长江新型显示产业创新中心有限公司 | Display panel, display device and preparation method of display panel |
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| JP2010087224A (en) * | 2008-09-30 | 2010-04-15 | Toyoda Gosei Co Ltd | Led display device and method of manufacturing barrier for led display device |
| TWI594661B (en) * | 2013-04-19 | 2017-08-01 | 隆達電子股份有限公司 | Led display and manufacturing method thereof |
| US8987765B2 (en) * | 2013-06-17 | 2015-03-24 | LuxVue Technology Corporation | Reflective bank structure and method for integrating a light emitting device |
| US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
| JP2015215429A (en) * | 2014-05-09 | 2015-12-03 | 株式会社明電舎 | Led display device and manufacturing method of led display device |
| KR102427644B1 (en) * | 2015-11-16 | 2022-08-02 | 삼성전자주식회사 | Light source, method of manufacturing the same, and display apparatus having the same |
| US10606121B2 (en) * | 2016-09-12 | 2020-03-31 | Seoul Semiconductor Co., Ltd. | Display apparatus |
| JP2019102664A (en) * | 2017-12-04 | 2019-06-24 | 株式会社ブイ・テクノロジー | Method for manufacturing led display panel |
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| WO2024024192A1 (en) * | 2022-07-28 | 2024-02-01 | デクセリアルズ株式会社 | Manufacturing method for light emitting device, and black transfer film |
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