JP2020043128A - 基板処理方法、基板処理装置および複合処理装置 - Google Patents
基板処理方法、基板処理装置および複合処理装置 Download PDFInfo
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Abstract
Description
図1は、凍結洗浄の処理手順の一例を示す図である。洗浄処理の対象である基板200のパターンが配置される面には、異物(パーティクル)120が付着しているものとする。基板200は、インプリント処理で使用されるテンプレート、露光装置で使用されるフォトマスクまたはパターンが配置されていないブランク基板などである。また、異物220には、有機系の異物、無機系の異物が存在する。なお、以下の説明では、洗浄処理を行う際に、基板200の上を向いている面を上面といい、下を向いている面を下面という。また、基板200において、パターンが配置されている面をおもて面といい、おもて面に対向する面を裏面という。基板200のおもて面が上の状態で装置に載置されている場合には、基板200の上面はおもて面となる。また、基板200のおもて面が下の状態で装置に載置されている場合には、基板200の上面は裏面となる。図1の場合では、基板200のおもて面が上面となっている。
第1の実施形態では、モニタ部は、光を用いて凍結層の状態を観察した。第2の実施形態では、音波を用いて凍結層の状態を観察する場合を説明する。
第1および第2の実施形態では、凍結洗浄中の基板上の凍結層をモニタして、クラックが生じる前に凍結層の融解処理を行う場合を説明した。第3の実施形態では、過去の処理から得られるクラックが生じる時間からクラックが生じない凍結洗浄の処理時間を決定し、この処理時間にしたがって基板処理方法を行う場合を説明する。
図14は、第4の実施形態による基板処理システムの構成の一例を模式的に示す図である。生産システムの一例である基板処理システム500は、処理部501と、操作部502と、記憶部503と、制御装置504と、を備える。
Claims (11)
- 基板の第1面上に液膜を形成し、
前記液膜の凝固点以下となるように前記基板を冷却して、前記液膜の少なくとも一部が凝固した凝固層を形成し、
前記凝固層を融解させ、
前記凝固層の形成は、前記凝固層の光学特性または音波特性をモニタしつつ、
モニタされた前記凝固層の状態に基づいて、前記基板の冷却に関する処理パラメータを制御する、
基板処理方法。 - 前記処理パラメータの制御では、前記凝固層の脆性破壊が生じる前に現れる前記凝固層の光学的特性または音波特性の変化を検出した時に、前記処理パラメータを変化させる請求項1に記載の基板処理方法。
- 前記処理パラメータは、前記基板を冷却する処理時間の長さである請求項2に記載の基板処理方法。
- 前記処理パラメータの制御では、前記凝固層の脆性破壊が生じる前に現れる前記凝固層の光学的特性または音波特性の変化を検出した時に、前記基板の冷却を停止し、前記融解開始のタイミングとする請求項1から3のいずれか1つに記載の基板処理方法。
- 前記処理パラメータの制御では、前記凝固層が形成された後の前記凝固層の反射光強度、透過光強度または音波強度が判定閾値未満となったことを検出した時に、前記融解開始のタイミングとする請求項1から4のいずれか1つに記載の基板処理方法。
- 第1面を有する基板を保持する基板保持部と、
処理液を前記第1面上に供給する処理液供給部と
前記第1面上に供給された前記処理液を凝固させる凝固部と、
前記第1面上の前記処理液が凝固した凝固層の光学特性または音波特性をモニタするモニタ部と、
を備える基板処理装置。 - モニタされた前記凝固層の状態に基づいて、前記基板の冷却に関する処理パラメータを制御し、前記凝固層の融解開始のタイミングの制御にしたがって前記凝固層の融解開始を制御する制御部をさらに備える請求項6に記載の基板処理装置。
- 前記制御部は、前記凝固層の脆性破壊が生じる前に現れる前記凝固層の光学的特性または音波特性の変化を検出した時に、前記処理パラメータを変化させる請求項7に記載の基板処理装置。
- 前記処理パラメータは、前記基板を冷却する処理時間の長さである請求項8に記載の基板処理装置。
- 前記制御部は、前記凝固層の脆性破壊が生じる前に現れる前記凝固層の光学的特性または音波特性の変化を検出した時に、前記凝固部による前記基板の冷却を停止し、前記融解開始のタイミングとする請求項9に記載の基板処理装置。
- 基板に対して凍結洗浄処理を行う凍結洗浄ユニットと、
前記基板に対して、酸またはアルカリを用いた処理、あるいは純水を用いた処理を行う洗浄ユニットと、
前記基板の上下を反転させる基板反転ユニットと、
前記各ユニット間で前記基板の搬送を行う基板搬送部と、
を備え、
前記凍結洗浄ユニットは、前記基板の第1面上に供給された処理液が凝固した凝固層の光学特性または音波特性をモニタするモニタ部を備える、
複合処理装置。
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KR20210108311A (ko) * | 2020-02-25 | 2021-09-02 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 |
JP2021136437A (ja) * | 2020-02-25 | 2021-09-13 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
KR20220135198A (ko) * | 2021-03-29 | 2022-10-06 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 |
JP2022153261A (ja) * | 2021-03-29 | 2022-10-12 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
US11784040B2 (en) | 2020-02-25 | 2023-10-10 | Shibaura Mechatronics Corporation | Substrate treatment device |
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Cited By (9)
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KR20210108311A (ko) * | 2020-02-25 | 2021-09-02 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 |
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JP7130722B2 (ja) | 2020-02-25 | 2022-09-05 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
KR102500591B1 (ko) | 2020-02-25 | 2023-02-15 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 |
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KR20220135198A (ko) * | 2021-03-29 | 2022-10-06 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 |
JP2022153261A (ja) * | 2021-03-29 | 2022-10-12 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
JP7337972B2 (ja) | 2021-03-29 | 2023-09-04 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
KR102632769B1 (ko) * | 2021-03-29 | 2024-02-01 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 |
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