JP2020017647A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2020017647A JP2020017647A JP2018140011A JP2018140011A JP2020017647A JP 2020017647 A JP2020017647 A JP 2020017647A JP 2018140011 A JP2018140011 A JP 2018140011A JP 2018140011 A JP2018140011 A JP 2018140011A JP 2020017647 A JP2020017647 A JP 2020017647A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- via hole
- substrate
- forming
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000005530 etching Methods 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 150000004767 nitrides Chemical class 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 24
- 239000011737 fluorine Substances 0.000 claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 22
- 238000001020 plasma etching Methods 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 25
- 239000012495 reaction gas Substances 0.000 claims description 25
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 23
- 239000000460 chlorine Substances 0.000 claims description 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052801 chlorine Inorganic materials 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000005275 alloying Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- 230000004048 modification Effects 0.000 description 15
- 238000012986 modification Methods 0.000 description 15
- 239000010931 gold Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Junction Field-Effect Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Die Bonding (AREA)
Abstract
Description
図8は、上記実施形態の第1変形例に係る製造工程を示す断面図である。本変形例では、まず、図8の(a)に示されるように、エッチングマスク43の開口43aを介して、ビアホール形成予定領域2aの基板3を裏面3b側から選択的にエッチングする。そして、基板3が僅かに残存する段階で(すなわち、基板3が完全に除去される直前で)エッチングを終了する。この工程は、上記実施形態の図4の(c)に示された工程と同様である。
図9は、上記実施形態の第2変形例に係る半導体装置としてのトランジスタ1Bを示す平面図である。図10は、図9に示されたトランジスタ1BのX−X線に沿った断面図である。なお、説明のため、図9においては絶縁膜31、32の図示が省略されている。
Claims (8)
- 基板と、前記基板上に設けられた窒化物半導体層とを含む基板生産物の前記窒化物半導体層側の表面上に、ビアホール形成予定領域を覆いAlを含む金属膜を形成する工程と、
前記基板生産物の前記基板側の裏面上に、前記ビアホール形成予定領域を露出させる開口を有するエッチングマスクを形成する工程と、
反応性イオンエッチングにより、前記裏面から前記表面に達し前記金属膜を露出させるビアホールを前記基板生産物に形成する工程と、
を含み、
前記ビアホールを形成する工程では、少なくともエッチング終了時を含む期間においてフッ素を含む反応ガスを用いる、半導体装置の製造方法。 - 前記基板はSiC基板であり、
前記ビアホールを形成する工程では、前記ビアホール形成予定領域の前記SiC基板の少なくとも一部を、フッ素を含む反応ガスを用いてエッチングする、請求項1に記載の半導体装置の製造方法。 - 前記エッチングマスクがNi及びCuの少なくとも一方を含む、請求項1または2に記載の半導体装置の製造方法。
- 前記フッ素を含む反応ガスは、SF6とO2との混合ガスである、請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
- 前記ビアホールを形成する工程では、前記ビアホール形成予定領域の前記窒化物半導体層をフッ素を含む反応ガスを用いてエッチングする、請求項1〜4のいずれか1項に記載の半導体装置の製造方法。
- 前記ビアホールを形成する工程では、前記ビアホール形成予定領域の前記窒化物半導体層の一部を塩素を含む反応ガスを用いてエッチングし、その後、前記ビアホール形成予定領域の前記窒化物半導体層の残部をフッ素を含む反応ガスを用いてエッチングする、請求項1〜4のいずれか1項に記載の半導体装置の製造方法。
- 前記ビアホールを形成する工程の後、前記ビアホール内において露出した前記金属膜を不活性ガスを含むプラズマに晒す工程と、前記金属膜に接する導電膜を前記ビアホール内に形成する工程とを更に含む、請求項1〜6のいずれか1項に記載の半導体装置の製造方法。
- 前記金属膜を形成する工程は、
前記基板生産物の表面上にTi若しくはTaからなる第1層を形成する工程と、
Alからなる第2層を前記第1層上に形成する工程と、
前記第1層及び前記第2層を合金化する工程と、
を含む、請求項1〜7のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018140011A JP7070848B2 (ja) | 2018-07-26 | 2018-07-26 | 半導体装置の製造方法 |
CN201910659838.4A CN110783191B (zh) | 2018-07-26 | 2019-07-22 | 制造半导体器件的方法 |
TW108126134A TWI821339B (zh) | 2018-07-26 | 2019-07-24 | 半導體裝置之製造方法 |
US16/521,936 US10943821B2 (en) | 2018-07-26 | 2019-07-25 | Method of manufacturing semiconductor device |
US17/177,042 US11626323B2 (en) | 2018-07-26 | 2021-02-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018140011A JP7070848B2 (ja) | 2018-07-26 | 2018-07-26 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020017647A true JP2020017647A (ja) | 2020-01-30 |
JP7070848B2 JP7070848B2 (ja) | 2022-05-18 |
Family
ID=69178631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018140011A Active JP7070848B2 (ja) | 2018-07-26 | 2018-07-26 | 半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US10943821B2 (ja) |
JP (1) | JP7070848B2 (ja) |
CN (1) | CN110783191B (ja) |
TW (1) | TWI821339B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10600746B2 (en) | 2018-07-19 | 2020-03-24 | Cree, Inc. | Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors |
US10971612B2 (en) * | 2019-06-13 | 2021-04-06 | Cree, Inc. | High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability |
US20230031381A1 (en) * | 2021-07-31 | 2023-02-02 | Applied Materials, Inc. | Apparatus for removing etch stop layers |
CN115799069A (zh) * | 2023-01-17 | 2023-03-14 | 北京中博芯半导体科技有限公司 | 一种P-GaN增强型HEMT器件的制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002151515A (ja) * | 2000-10-27 | 2002-05-24 | Agilent Technol Inc | チタン/アルミニウム合金を用いた集積回路金属被着膜 |
JP2007311771A (ja) * | 2006-04-21 | 2007-11-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2008532290A (ja) * | 2005-02-25 | 2008-08-14 | クリー インコーポレイテッド | 炭化珪素においてビアを形成する方法、及び得られるデバイスと回路 |
JP2011077434A (ja) * | 2009-10-01 | 2011-04-14 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
JP2012033690A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Device Innovations Inc | 半導体装置及び製造方法 |
JP2013191763A (ja) * | 2012-03-14 | 2013-09-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JP6265307B1 (ja) * | 2017-03-24 | 2018-01-24 | 三菱電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP2020535648A (ja) * | 2017-09-25 | 2020-12-03 | レイセオン カンパニー | 電界効果トランジスタの電極構造 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3530073B2 (ja) * | 1999-05-25 | 2004-05-24 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP4322508B2 (ja) * | 2003-01-15 | 2009-09-02 | 新光電気工業株式会社 | 半導体装置の製造方法 |
JP2006179515A (ja) * | 2004-12-20 | 2006-07-06 | Oki Electric Ind Co Ltd | 半導体素子の製造方法、及びエッチング方法 |
JP5228381B2 (ja) * | 2007-06-25 | 2013-07-03 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP5298559B2 (ja) * | 2007-06-29 | 2013-09-25 | 富士通株式会社 | 半導体装置及びその製造方法 |
US8563494B2 (en) * | 2007-09-04 | 2013-10-22 | Conopco, Inc. | Iridescent soap bars containing ethoxylated alcohols |
JP5262185B2 (ja) | 2008-02-29 | 2013-08-14 | 富士通株式会社 | 半導体装置の製造方法 |
JP5568824B2 (ja) * | 2010-07-30 | 2014-08-13 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
US8524600B2 (en) * | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
KR101988893B1 (ko) * | 2012-12-12 | 2019-09-30 | 한국전자통신연구원 | 반도체 소자 및 이를 제조하는 방법 |
JP6251071B2 (ja) * | 2014-02-05 | 2017-12-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10290674B2 (en) * | 2016-04-22 | 2019-05-14 | QROMIS, Inc. | Engineered substrate including light emitting diode and power circuitry |
US10622468B2 (en) * | 2017-02-21 | 2020-04-14 | QROMIS, Inc. | RF device integrated on an engineered substrate |
US10923585B2 (en) * | 2019-06-13 | 2021-02-16 | Cree, Inc. | High electron mobility transistors having improved contact spacing and/or improved contact vias |
-
2018
- 2018-07-26 JP JP2018140011A patent/JP7070848B2/ja active Active
-
2019
- 2019-07-22 CN CN201910659838.4A patent/CN110783191B/zh active Active
- 2019-07-24 TW TW108126134A patent/TWI821339B/zh active
- 2019-07-25 US US16/521,936 patent/US10943821B2/en active Active
-
2021
- 2021-02-16 US US17/177,042 patent/US11626323B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002151515A (ja) * | 2000-10-27 | 2002-05-24 | Agilent Technol Inc | チタン/アルミニウム合金を用いた集積回路金属被着膜 |
JP2008532290A (ja) * | 2005-02-25 | 2008-08-14 | クリー インコーポレイテッド | 炭化珪素においてビアを形成する方法、及び得られるデバイスと回路 |
JP2007311771A (ja) * | 2006-04-21 | 2007-11-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2011077434A (ja) * | 2009-10-01 | 2011-04-14 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
JP2012033690A (ja) * | 2010-07-30 | 2012-02-16 | Sumitomo Electric Device Innovations Inc | 半導体装置及び製造方法 |
JP2013191763A (ja) * | 2012-03-14 | 2013-09-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JP6265307B1 (ja) * | 2017-03-24 | 2018-01-24 | 三菱電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP2020535648A (ja) * | 2017-09-25 | 2020-12-03 | レイセオン カンパニー | 電界効果トランジスタの電極構造 |
Also Published As
Publication number | Publication date |
---|---|
US10943821B2 (en) | 2021-03-09 |
JP7070848B2 (ja) | 2022-05-18 |
CN110783191B (zh) | 2023-10-10 |
TWI821339B (zh) | 2023-11-11 |
TW202017038A (zh) | 2020-05-01 |
US20210166970A1 (en) | 2021-06-03 |
CN110783191A (zh) | 2020-02-11 |
US20200035551A1 (en) | 2020-01-30 |
US11626323B2 (en) | 2023-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI431770B (zh) | 半導體裝置及製造其之方法 | |
JP5564791B2 (ja) | 化合物半導体装置及びその製造方法 | |
CN110783191B (zh) | 制造半导体器件的方法 | |
JP5983999B2 (ja) | 半導体装置の製造方法 | |
JP5970736B2 (ja) | 半導体装置の製造方法 | |
JP2007273545A (ja) | 半導体装置及びその製造方法 | |
US20190229203A1 (en) | Manufacturing method of an hemt transistor of the normally off type with reduced resistance in the on state and hemt transistor | |
JP2006024880A (ja) | 半導体装置及びその製造方法 | |
TW201419546A (zh) | 電晶體與其形成方法與半導體元件 | |
US10903323B2 (en) | Semiconductor device | |
CN103000516B (zh) | 形成半导体结构的方法 | |
JP6874928B2 (ja) | 半導体装置 | |
US9640429B2 (en) | Method of fabricating semiconductor device | |
JP6171250B2 (ja) | 半導体装置 | |
TW201436205A (zh) | 半導體裝置與其之製造方法 | |
JP6984456B2 (ja) | 電界効果トランジスタの製造方法 | |
JP2015073002A (ja) | 化合物半導体装置及びその製造方法 | |
JP6524888B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP5799663B2 (ja) | オーミック電極とその形成方法 | |
JP2010171287A (ja) | 窒化物半導体装置 | |
JP6776501B2 (ja) | 半導体装置の製造方法 | |
JP5742912B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP2020102535A (ja) | 窒化物半導体デバイスの製造方法及び窒化物半導体デバイス | |
JP2021044357A (ja) | 高電子移動度トランジスタの製造方法 | |
JP2011204823A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190729 |
|
A625 | Written request for application examination (by other person) |
Free format text: JAPANESE INTERMEDIATE CODE: A625 Effective date: 20210121 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20211116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211124 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220114 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220405 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220420 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7070848 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |