JP2019533311A - 基板処理装置に設けられる基板着座部 - Google Patents
基板処理装置に設けられる基板着座部 Download PDFInfo
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- JP2019533311A JP2019533311A JP2019520037A JP2019520037A JP2019533311A JP 2019533311 A JP2019533311 A JP 2019533311A JP 2019520037 A JP2019520037 A JP 2019520037A JP 2019520037 A JP2019520037 A JP 2019520037A JP 2019533311 A JP2019533311 A JP 2019533311A
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- 239000000758 substrate Substances 0.000 title claims abstract description 168
- 238000010438 heat treatment Methods 0.000 claims abstract description 207
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 description 52
- 239000007789 gas Substances 0.000 description 33
- 238000009826 distribution Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (12)
- 基板処理装置に設けられる基板着座部であって、
前記基板着座部は、
内側加熱線及び外側加熱線を有する複数の内側区域と、
周縁に設けられて前記内側区域を取り囲み、前記外側加熱線を有する外側区域とに分割され、
前記内側加熱線は、少なくとも一部の区間が第1間隔で同一の前記内側区域に配置され、
別個の前記内側区域に配置されるそれぞれの前記内側加熱線は、互いに平行に並ぶ箇所において第2間隔で配置され、
前記内側加熱線と前記外側加熱線は、互いに平行に並ぶ箇所において第3間隔で配置され、
前記第1間隔は、前記第2間隔より狭い
ことを特徴とする基板着座部。 - 前記第1間隔は、前記第3間隔に等しいか、前記第3間隔よりも狭いことを特徴とする、請求項1に記載の基板着座部。
- 前記第2間隔は、前記第3間隔に等しいか、前記第3間隔よりも広いことを特徴とする、請求項1に記載の基板着座部。
- 前記内側区域に位置した前記外側加熱線の一部は加熱されないことを特徴とする、請求項1に記載の基板着座部。
- 少なくとも一つの前記外側区域の前記外側加熱線の一部は、基板と重ならない外郭に位置し、基板の外郭の温度を補償することを特徴とする、請求項1に記載の基板着座部。
- 少なくとも一つの前記外側区域における前記外側加熱線の一部は、前記内側区域の外側加熱線よりも高い温度を保つことを特徴とする、請求項1に記載の基板着座部。
- 少なくとも一つの前記内側区域における前記外側加熱線の一部は、前記内側区域の前記内側加熱線よりも低い温度を保つことを特徴とする、請求項1に記載の基板着座部。
- 前記外側区域は、複数で設けられ、それぞれ独立して加熱されることを特徴とする、請求項1に記載の基板着座部。
- 前記内側区域は4分面に分けられることを特徴とする、請求項1に記載の基板着座部。
- 前記外側区域は4分面に分けられることを特徴とする、請求項1に記載の基板着座部。
- 基板処理装置に設けられる基板着座部であって、
前記基板着座部は、
内側加熱線及び外側加熱線を有する複数の内側区域と、
周縁に設けられて前記内側区域を取り囲み、前記外側加熱線を有する外側区域とに分割され、
前記内側加熱線は、少なくとも一部の区間が第1間隔で同一の前記内側区域に配置され、
別個の前記内側区域に配置されるそれぞれの前記内側加熱線は、互いに平行に並ぶ箇所において第2間隔で配置され、
前記内側加熱線と前記外側加熱線は、互いに平行に並ぶ箇所において第3間隔で配置され、
前記第1間隔は、前記第3間隔に等しいか、前記第3間隔よりも狭い
ことを特徴とする基板着座部。 - 基板処理装置に設けられる基板着座部であって、
前記基板着座部は、
内側加熱線及び外側加熱線を有する複数の内側区域と、
周縁に設けられて前記内側区域を取り囲み、前記外側加熱線を有する外側区域とに分割され、
前記内側加熱線は、少なくとも一部の区間が第1間隔で同一の前記内側区域に配置され、
別個の前記内側区域に配置されるそれぞれの前記内側加熱線は、互いに平行に並ぶ箇所において第2間隔で配置され、
前記内側加熱線と前記外側加熱線は、互いに平行に並ぶ箇所において第3間隔で配置され、前記第2間隔は、前記第3間隔に等しいか、前記第3間隔よりも広い
ことを特徴とする基板着座部。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0131958 | 2016-10-12 | ||
KR1020160131958A KR102613805B1 (ko) | 2016-10-12 | 2016-10-12 | 기판 처리장치에 구비되는 기판안착부 |
PCT/KR2017/011161 WO2018070765A1 (ko) | 2016-10-12 | 2017-10-11 | 기판 처리장치에 구비되는 기판안착부 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019533311A true JP2019533311A (ja) | 2019-11-14 |
JP7181191B2 JP7181191B2 (ja) | 2022-11-30 |
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Application Number | Title | Priority Date | Filing Date |
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JP2019520037A Active JP7181191B2 (ja) | 2016-10-12 | 2017-10-11 | 基板処理装置に設けられる基板着座部 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11469135B2 (ja) |
JP (1) | JP7181191B2 (ja) |
KR (1) | KR102613805B1 (ja) |
CN (1) | CN109791902A (ja) |
TW (1) | TWI812598B (ja) |
WO (1) | WO2018070765A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003257593A (ja) * | 2002-02-27 | 2003-09-12 | Kyocera Corp | ウエハ支持部材 |
JP2005303014A (ja) * | 2004-04-12 | 2005-10-27 | Ngk Insulators Ltd | 基板加熱装置 |
US20060186110A1 (en) * | 2005-02-22 | 2006-08-24 | Mark Campello | Electric heater with resistive carbon heating elements |
JP3198619U (ja) * | 2013-10-24 | 2015-07-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 象限を有する基板支持体 |
KR20160109833A (ko) * | 2015-03-13 | 2016-09-21 | 주성엔지니어링(주) | 기판 처리장치에 구비되는 기판안착부 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH097741A (ja) * | 1995-06-20 | 1997-01-10 | Ngk Spark Plug Co Ltd | セラミックヒータ |
US6423949B1 (en) * | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
EP1199908A4 (en) * | 1999-10-22 | 2003-01-22 | Ibiden Co Ltd | CERAMIC HEATING PLATE |
JP2002373846A (ja) * | 2001-06-14 | 2002-12-26 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータおよび半導体製造・検査装置用ホットプレートユニット |
KR20150037075A (ko) | 2013-09-30 | 2015-04-08 | (주)티티에스 | 히터 |
KR20160049070A (ko) | 2014-10-24 | 2016-05-09 | 세메스 주식회사 | 웨이퍼 가열용 척 구조물 |
-
2016
- 2016-10-12 KR KR1020160131958A patent/KR102613805B1/ko active IP Right Grant
-
2017
- 2017-10-11 CN CN201780061456.0A patent/CN109791902A/zh active Pending
- 2017-10-11 US US16/340,094 patent/US11469135B2/en active Active
- 2017-10-11 JP JP2019520037A patent/JP7181191B2/ja active Active
- 2017-10-11 WO PCT/KR2017/011161 patent/WO2018070765A1/ko active Application Filing
- 2017-10-11 TW TW106134724A patent/TWI812598B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003257593A (ja) * | 2002-02-27 | 2003-09-12 | Kyocera Corp | ウエハ支持部材 |
JP2005303014A (ja) * | 2004-04-12 | 2005-10-27 | Ngk Insulators Ltd | 基板加熱装置 |
US20060186110A1 (en) * | 2005-02-22 | 2006-08-24 | Mark Campello | Electric heater with resistive carbon heating elements |
JP3198619U (ja) * | 2013-10-24 | 2015-07-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 象限を有する基板支持体 |
KR20160109833A (ko) * | 2015-03-13 | 2016-09-21 | 주성엔지니어링(주) | 기판 처리장치에 구비되는 기판안착부 |
Also Published As
Publication number | Publication date |
---|---|
JP7181191B2 (ja) | 2022-11-30 |
CN109791902A (zh) | 2019-05-21 |
KR20180040282A (ko) | 2018-04-20 |
WO2018070765A1 (ko) | 2018-04-19 |
US11469135B2 (en) | 2022-10-11 |
KR102613805B1 (ko) | 2023-12-15 |
TW201826426A (zh) | 2018-07-16 |
TWI812598B (zh) | 2023-08-21 |
US20200027776A1 (en) | 2020-01-23 |
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