JP2019522351A - 太陽光発電デバイスを製造するための方法 - Google Patents
太陽光発電デバイスを製造するための方法 Download PDFInfo
- Publication number
- JP2019522351A JP2019522351A JP2018555532A JP2018555532A JP2019522351A JP 2019522351 A JP2019522351 A JP 2019522351A JP 2018555532 A JP2018555532 A JP 2018555532A JP 2018555532 A JP2018555532 A JP 2018555532A JP 2019522351 A JP2019522351 A JP 2019522351A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- layer
- crystal grains
- conductive
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 247
- 239000004020 conductor Substances 0.000 claims abstract description 209
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 239000000463 material Substances 0.000 claims abstract description 57
- 239000011148 porous material Substances 0.000 claims abstract description 53
- 238000010438 heat treatment Methods 0.000 claims abstract description 49
- 238000000576 coating method Methods 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000011248 coating agent Substances 0.000 claims abstract description 40
- 239000010410 layer Substances 0.000 claims description 565
- 239000002245 particle Substances 0.000 claims description 160
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 88
- 229910052710 silicon Inorganic materials 0.000 claims description 88
- 239000010703 silicon Substances 0.000 claims description 86
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 19
- 229920001940 conductive polymer Polymers 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 8
- 229910010272 inorganic material Inorganic materials 0.000 claims description 6
- 239000011147 inorganic material Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- 238000007590 electrostatic spraying Methods 0.000 claims description 4
- 239000013212 metal-organic material Substances 0.000 claims description 4
- 229910021471 metal-silicon alloy Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 description 53
- 229910052719 titanium Inorganic materials 0.000 description 45
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 44
- 230000031700 light absorption Effects 0.000 description 40
- 229920000144 PEDOT:PSS Polymers 0.000 description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 23
- 229910052709 silver Inorganic materials 0.000 description 23
- 239000004332 silver Substances 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 20
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 19
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 18
- 238000007639 printing Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 239000000243 solution Substances 0.000 description 15
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 14
- 229910021341 titanium silicide Inorganic materials 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000010248 power generation Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
- 238000005507 spraying Methods 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 229910052593 corundum Inorganic materials 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 9
- 230000032258 transport Effects 0.000 description 9
- 229910001845 yogo sapphire Inorganic materials 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000008901 benefit Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910008484 TiSi Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229910000323 aluminium silicate Inorganic materials 0.000 description 7
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- 239000011888 foil Substances 0.000 description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 239000011856 silicon-based particle Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229920001410 Microfiber Polymers 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000012777 electrically insulating material Substances 0.000 description 5
- 239000003658 microfiber Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 238000000227 grinding Methods 0.000 description 3
- 238000003306 harvesting Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000005373 porous glass Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910003082 TiO2-SiO2 Inorganic materials 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- LVYZJEPLMYTTGH-UHFFFAOYSA-H dialuminum chloride pentahydroxide dihydrate Chemical compound [Cl-].[Al+3].[OH-].[OH-].[Al+3].[OH-].[OH-].[OH-].O.O LVYZJEPLMYTTGH-UHFFFAOYSA-H 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- 229910000048 titanium hydride Inorganic materials 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- LLYXJBROWQDVMI-UHFFFAOYSA-N 2-chloro-4-nitrotoluene Chemical compound CC1=CC=C([N+]([O-])=O)C=C1Cl LLYXJBROWQDVMI-UHFFFAOYSA-N 0.000 description 1
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- -1 TiO2 metal oxide Chemical class 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
- H01G9/2009—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2045—Light-sensitive devices comprising a semiconductor electrode comprising elements of the fourth group of the Periodic System (C, Si, Ge, Sn, Pb) with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
−多孔質絶縁基板の一方の側に多孔質の第1の導電層を形成するステップ、
−第1の導電層に、ドープされた半導体材料の結晶粒の層をコーティングして、構造体を形成するステップ、
−構造体の第1の熱処理を行って、結晶粒を第1の導電層に結合するステップ、
−第1の導電層の表面上に電気絶縁層を形成するステップ、
−多孔質絶縁基板の反対側に第2の導電層を形成するステップ、
−結晶粒の表面上、第1の導電層の細孔内、及び絶縁基板の細孔内に電荷伝導材料を塗布するステップ、並びに
−電荷伝導材料を第2の導電層に電気的に接続するステップ
を含む。
結晶粒2と電荷伝導体3の界面40において電子と正孔の効率的な電荷分離を実現して、高い光電流及び高い光電圧の生成を可能にするために、結晶粒2は本質的に酸化物を含んでいてはならない。効率的な電荷分離を得るためには、結晶粒上の酸化物層の厚さは、わずか数ナノメートルの厚さ、さらにはそれよりも薄くすべきである。この実施形態では、結晶粒2はドープされたシリコンから成り、電荷伝導体3はPEDOTから成り、それに従って、界面40はPEDOT−Si界面である。シリコンは、PEDOT−Si界面での電子と正孔の効率的な電荷分離を実現するために、本質的に酸化物を含んではならず、すなわちSi表面上にSiO2をほとんど又は全く含んではならない。
結晶粒2と第1の導電層の導電性粒子24の間に金属シリサイドの層26が形成される。金属シリサイドは、電子が結晶粒から導電性粒子に移動されるときの抵抗損を最小にするために十分に高い導電性を有するべきである。この実施形態では、導電性粒子はチタン(Ti)から成り、それに従って、シリコン結晶粒とチタン粒子の間の層26はチタンシリサイド(TiSi2)からなる。
短絡を避けるために、電荷伝導体3、金属シリサイド層26、及び絶縁酸化物層28の間に絶縁層38が存在すべきである。この実施形態では、絶縁層38は、酸化チタン(TiO2)及び酸化ケイ素(SiO2)からなる。TiO2−SiO2層38は、PEDOTとTiSi2の良好な電気的絶縁を実現するのに十分に厚くしなければならない。TiO2−SiO2層38が薄すぎる場合、PEDOTとTiSi2の間で短絡が生じ、その結果、光電流及び光電圧が低下する。
電荷伝導体3と第1及び第2の導電層の導電性粒子24、25の間の絶縁を実現するために、導電性粒子は絶縁酸化物層28で覆われる。この実施形態では、絶縁酸化物層28は、TiO2などの酸化チタンからなる。酸化チタン層28は、PEDOTとチタンの十分な電気的絶縁を実現するために十分に厚くしなければならない。酸化チタン層が薄すぎる場合、PEDOTとチタンの短絡により、光電圧及び光電流が低下される。
第2の導電層の導電性粒子25と接続部位34の間に、導電層36がある。この実施形態では、導電層36はチタン銀(TiAg)からなる。導電層36は、第2の導電層の導電性粒子25と接続部位34の間、例えば銀(Ag)とチタン(Ti)の間に良好な低オーム電気接触を提供するのに十分な厚さにしなければならない。
電荷伝導体3は、界面42で接続部位34と接触している。電荷伝導体3、この実施形態ではPEDOTは、最大の光電流を実現するために抵抗損を避けるのに十分に、接続部位34の銀を覆うべきである。
Claims (15)
- 太陽光発電デバイスを製造するための方法であって、
多孔質絶縁基板(20)の一方の側に多孔質の第1の導電層(16)を形成するステップ、
前記第1の導電層に、ドープされた半導体材料の結晶粒(2)の層をコーティングして、構造体を形成するステップ、
前記構造体の第1の熱処理を行って、前記結晶粒を前記第1の導電層に結合するステップ、
前記第1の導電層の表面上に電気絶縁層を形成するステップ、
前記多孔質絶縁基板(20)の反対側に第2の導電層(18)を形成するステップ、
前記結晶粒の前記表面上、前記第1の導電層の細孔内、及び前記絶縁基板の細孔内に電荷伝導材料(3)を塗布するステップ、並びに
前記電荷伝導材料を前記第2の導電層に電気的に接続するステップ
を含む方法。 - 前記結晶粒(2)の平均サイズが、1μm〜300μm、好ましくは10μm〜80μm、最も好ましくは20〜50μmである、請求項1に記載の方法。
- 結晶粒の前記層(6)が単層である、請求項1又は2に記載の方法。
- 前記第1の導電層(16)が、前記結晶粒(2)の粉末を含むインクを前記第1の導電層上に堆積することによってコーティングされる、請求項1〜3のうちいずれか一項に記載の方法。
- 前記結晶粒(2)を含む前記インクが、静電噴霧によって前記第1の導電層(16)上に堆積される、請求項4に記載の方法。
- 前記構造体の前記第1の熱処理を行う前に前記結晶粒(2)を酸化することを含む、請求項1〜5のうちいずれか一項に記載の方法。
- 前記結晶粒(2)が、ドープされたシリコンから成る、請求項1〜6のうちいずれか一項に記載の方法。
- 前記第1の導電層(16)に前記結晶粒をコーティングする前に、前記結晶粒の第1のエッチングを行って、前記結晶粒上に{111}ピラミッド面を形成するステップを含む、請求項1〜7のうちいずれか一項に記載の方法。
- 前記結晶粒の表面上に前記電荷伝導材料(3)を塗布する前に、前記結晶粒(2)の第2のエッチングを行うステップを含む、請求項1〜8のうちいずれか一項に記載の方法。
- 前記電荷伝導材料(3)が、導電性ポリマー、無機材料、及び金属有機材料の任意のものである、請求項1〜9のうちいずれか一項に記載の方法。
- 電荷伝導材料(3)を前記結晶粒(2)の前記表面上に塗布する前記ステップが、前記電荷伝導材料の粒子を含む液体ベースの溶液を前記結晶粒の前記表面上、前記第1の導電層の細孔の内部、及び前記絶縁基板の前記細孔の内部に塗布し、前記構造体を乾燥させて、固体電荷伝導体の層(6)が前記結晶粒上に堆積され、固体電荷伝導体が前記第1の導電層の前記細孔の内部及び前記絶縁基板の前記細孔の内部に堆積される、請求項1〜10のうちいずれか一項に記載の方法。
- 前記多孔質絶縁基板(20)の一方の側に多孔質の第1の導電層(16)を形成する前記ステップが、前記多孔質絶縁基板の一方の側に導電性粒子(24)を含むインクを堆積することを含む、請求項1〜11のうちいずれか一項に記載の方法。
- 前記結晶粒(2)が、ドープされたシリコンから成り、前記第1の導電層が、金属又は金属合金の粒子(24)を含み、金属シリサイド又は金属シリコン合金の区域(26)が、前記第1の熱処理中に前記結晶粒と前記粒子の境界に形成される、請求項1〜12のうちいずれか一項に記載の方法。
- 前記第1の導電層(16)の表面上に電気絶縁層を形成する前記ステップが、酸化環境内で前記構造体の第2の熱処理を行って、前記第1の導電層の前記露出した表面上に絶縁酸化物層(28)を形成することを含む、請求項1〜13のうちいずれか一項に記載の方法。
- 前記第1の導電層(16)の表面上に電気絶縁層を形成する前記ステップが、前記第1の導電層の前記露出した表面上に絶縁コーティングを堆積することを含む、請求項1〜14のうちいずれか一項に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE1651090 | 2016-07-29 | ||
SE1651090-1 | 2016-07-29 | ||
SE1651521-5 | 2016-11-21 | ||
SE1651521A SE540184C2 (en) | 2016-07-29 | 2016-11-21 | A light absorbing layer and a photovoltaic device including a light absorbing layer |
PCT/EP2017/067633 WO2018019598A1 (en) | 2016-07-29 | 2017-07-12 | A method for producing a photovoltaic device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019522351A true JP2019522351A (ja) | 2019-08-08 |
JP6694178B2 JP6694178B2 (ja) | 2020-05-13 |
Family
ID=61236531
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018555520A Active JP6635357B2 (ja) | 2016-07-29 | 2017-01-10 | 光吸収層を含む太陽光発電デバイス |
JP2018555532A Active JP6694178B2 (ja) | 2016-07-29 | 2017-07-12 | 太陽光発電デバイスを製造するための方法 |
JP2020501213A Active JP6768986B2 (ja) | 2016-07-29 | 2018-06-29 | ドープ半導体材料の複数の粒を含む光吸収層を有する光起電力装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018555520A Active JP6635357B2 (ja) | 2016-07-29 | 2017-01-10 | 光吸収層を含む太陽光発電デバイス |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020501213A Active JP6768986B2 (ja) | 2016-07-29 | 2018-06-29 | ドープ半導体材料の複数の粒を含む光吸収層を有する光起電力装置 |
Country Status (14)
Country | Link |
---|---|
US (3) | US10998459B2 (ja) |
EP (2) | EP3491680B1 (ja) |
JP (3) | JP6635357B2 (ja) |
KR (3) | KR102033273B1 (ja) |
CN (3) | CN109496370B (ja) |
AU (2) | AU2017302388B2 (ja) |
BR (1) | BR112019001351B1 (ja) |
CA (2) | CA3022237C (ja) |
ES (3) | ES2884324T3 (ja) |
MX (2) | MX2019001200A (ja) |
SA (2) | SA518400512B1 (ja) |
SE (2) | SE540184C2 (ja) |
TW (1) | TWI715698B (ja) |
ZA (2) | ZA201808012B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2901323T3 (es) * | 2019-07-26 | 2022-03-22 | Meyer Burger Germany Gmbh | Dispositivo fotovoltaico y método para fabricar el mismo |
AU2021479832A1 (en) * | 2021-12-23 | 2024-07-11 | Contemporary Amperex Technology Co., Limited | A/m/x crystalline material, photovoltaic device, and preparation methods thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08186245A (ja) * | 1994-12-28 | 1996-07-16 | Sony Corp | 量子構造の製造方法 |
JP2008143754A (ja) * | 2006-12-12 | 2008-06-26 | Union Material Kk | 球状シリコン結晶及びその製造方法 |
WO2012102343A1 (ja) * | 2011-01-26 | 2012-08-02 | 国立大学法人山口大学 | シリコン融液接触部材、その製法、および結晶シリコンの製造方法 |
US9859348B2 (en) * | 2011-10-14 | 2018-01-02 | Diftek Lasers, Inc. | Electronic device and method of making thereof |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2900921C2 (de) | 1979-01-11 | 1981-06-04 | Censor Patent- und Versuchs-Anstalt, 9490 Vaduz | Verfahren zum Projektionskopieren von Masken auf ein Werkstück |
US4357400A (en) | 1979-12-11 | 1982-11-02 | Electric Power Research Institute, Inc. | Photoelectrochemical cell employing discrete semiconductor bodies |
JPH0536997A (ja) * | 1991-07-26 | 1993-02-12 | Sanyo Electric Co Ltd | 光起電力装置 |
JP2001156321A (ja) * | 1999-03-09 | 2001-06-08 | Fuji Xerox Co Ltd | 半導体装置およびその製造方法 |
EP1175938A1 (en) * | 2000-07-29 | 2002-01-30 | The Hydrogen Solar Production Company Limited | Photocatalytic film of iron oxide, electrode with such a photocatalytic film, method of producing such films, photoelectrochemical cell with the electrode and photoelectrochemical system with the cell, for the cleavage of water into hydrogen and oxygen |
EP1180774B1 (en) * | 2000-08-15 | 2006-10-11 | Fuji Photo Film Co., Ltd. | Photoelectric conversion device and method for producing same |
JP2004055686A (ja) * | 2002-07-17 | 2004-02-19 | Sharp Corp | 太陽電池およびその製造方法 |
JP4016419B2 (ja) | 2002-08-23 | 2007-12-05 | Jsr株式会社 | シリコン膜形成用組成物およびシリコン膜の形成方法 |
US7052587B2 (en) | 2003-06-27 | 2006-05-30 | General Motors Corporation | Photoelectrochemical device and electrode |
EP1624472A3 (en) | 2004-07-08 | 2011-03-16 | Sumitomo Chemical Company, Limited | Porous Electrodes, Devices including the Porous Electrodes, and Methods for their Production |
US20060021647A1 (en) | 2004-07-28 | 2006-02-02 | Gui John Y | Molecular photovoltaics, method of manufacture and articles derived therefrom |
JP2006156582A (ja) * | 2004-11-26 | 2006-06-15 | Kyocera Corp | 半導体部品および光電変換装置 |
JP2007281018A (ja) | 2006-04-03 | 2007-10-25 | Mitsubishi Heavy Ind Ltd | 光電変換装置及びその製造方法 |
KR20070099840A (ko) * | 2006-04-05 | 2007-10-10 | 삼성에스디아이 주식회사 | 태양 전지 및 이의 제조 방법 |
US8158880B1 (en) | 2007-01-17 | 2012-04-17 | Aqt Solar, Inc. | Thin-film photovoltaic structures including semiconductor grain and oxide layers |
US20090308442A1 (en) | 2008-06-12 | 2009-12-17 | Honeywell International Inc. | Nanostructure enabled solar cell electrode passivation via atomic layer deposition |
KR100908243B1 (ko) * | 2007-08-22 | 2009-07-20 | 한국전자통신연구원 | 전자 재결합 차단층을 포함하는 염료감응 태양전지 및 그제조 방법 |
ES2555205T3 (es) * | 2007-12-12 | 2015-12-29 | Sharp Kabushiki Kaisha | Módulo de célula solar fotosensibilizada y método para la fabricación del mismo |
US8067763B2 (en) | 2007-12-19 | 2011-11-29 | Honeywell International Inc. | Quantum dot solar cell with conjugated bridge molecule |
KR101461522B1 (ko) | 2008-04-10 | 2014-11-14 | 한양대학교 산학협력단 | 겔형 전해질 및 이를 이용한 염료감응 태양전지 |
KR100952837B1 (ko) | 2008-07-28 | 2010-04-15 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 |
US20110048525A1 (en) | 2008-11-26 | 2011-03-03 | Sony Corporation | Functional device and method for producing the same |
CN102341952A (zh) | 2009-03-06 | 2012-02-01 | 日本电气株式会社 | 光电转换元件及其制造方法,光学传感器和太阳能电池 |
JP4683396B2 (ja) | 2009-04-30 | 2011-05-18 | シャープ株式会社 | 多孔質電極、色素増感太陽電池、および色素増感太陽電池モジュール |
KR101072472B1 (ko) | 2009-07-03 | 2011-10-11 | 한국철강 주식회사 | 광기전력 장치의 제조 방법 |
GB0916037D0 (en) | 2009-09-11 | 2009-10-28 | Isis Innovation | Device |
CN201655556U (zh) | 2009-12-24 | 2010-11-24 | 彩虹集团公司 | 一种染料敏化太阳能电池 |
GB201004106D0 (en) * | 2010-03-11 | 2010-04-28 | Isis Innovation | Device |
JP4620794B1 (ja) | 2010-03-11 | 2011-01-26 | 大日本印刷株式会社 | 色素増感型太陽電池 |
KR101339439B1 (ko) | 2010-06-22 | 2013-12-10 | 한국전자통신연구원 | 태양 전지 및 그 제조 방법 |
US8329496B2 (en) | 2010-10-14 | 2012-12-11 | Miasole | Dithered scanned laser beam for scribing solar cell structures |
EP2642546A1 (en) * | 2010-11-16 | 2013-09-25 | Sekisui Chemical Co., Ltd. | Ink for active layer of organic solar cell, organic solar cell, and process for manufacture of organic solar cell |
US20120285521A1 (en) | 2011-05-09 | 2012-11-15 | The Trustees Of Princeton University | Silicon/organic heterojunction (soh) solar cell and roll-to-roll fabrication process for making same |
JP5118233B2 (ja) | 2011-06-08 | 2013-01-16 | シャープ株式会社 | 光電変換素子および光電変換素子モジュール |
KR101246618B1 (ko) | 2011-06-27 | 2013-03-25 | 한국화학연구원 | 무기반도체 감응형 광전소자 및 그 제조방법 |
TW201301538A (zh) | 2011-06-28 | 2013-01-01 | Ind Tech Res Inst | 複合型染料敏化光電裝置 |
KR101266514B1 (ko) * | 2011-07-18 | 2013-05-27 | 충남대학교산학협력단 | 염료 감응형 태양전지용 광전극 및 이의 제조방법 |
AU2012323518A1 (en) * | 2011-10-11 | 2014-05-08 | Exeger Sweden Ab | Method for manufacturing dye-sensitized solar cells and solar cells so produced |
JP6373552B2 (ja) | 2011-10-26 | 2018-08-15 | 住友化学株式会社 | 光電変換素子 |
SE537669C2 (sv) * | 2012-04-04 | 2015-09-29 | Exeger Sweden Ab | Färgämnessensiterad solcellsmodul med seriekopplad struktursamt sätt för framställning av solcellen |
PL2850669T3 (pl) | 2012-05-18 | 2016-08-31 | Isis Innovation | Urządzenie fotowoltaiczne zawierające Perowskity |
US20150228414A1 (en) | 2012-08-22 | 2015-08-13 | Sumitomo Osak Cement Co., Ltd. | Dye-sensitive solar cell paste, porous light-reflective insulation layer, and dye-sensitive solar cell |
WO2014077121A1 (ja) | 2012-11-13 | 2014-05-22 | 積水化学工業株式会社 | 太陽電池 |
US8785233B2 (en) | 2012-12-19 | 2014-07-22 | Sunpower Corporation | Solar cell emitter region fabrication using silicon nano-particles |
US9312406B2 (en) | 2012-12-19 | 2016-04-12 | Sunpower Corporation | Hybrid emitter all back contact solar cell |
TWI539618B (zh) * | 2013-02-07 | 2016-06-21 | 陳柏頴 | 半導體材料組成物及其製成太陽能電池之方法 |
US9768343B2 (en) | 2013-04-29 | 2017-09-19 | OB Realty, LLC. | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate |
WO2014180780A1 (en) | 2013-05-06 | 2014-11-13 | Greatcell Solar S.A. | Organic-inorganic perovskite based solar cell |
CN105247636B (zh) * | 2013-05-17 | 2017-08-29 | 艾克瑟格瑞典公司 | 染料敏化太阳能电池以及制造太阳能电池的方法 |
SG11201600340SA (en) | 2013-09-04 | 2016-02-26 | Dyesol Ltd | A photovoltaic device |
SE537836C2 (sv) | 2014-02-06 | 2015-11-03 | Exeger Sweden Ab | En transparent färgämnessensibiliserad solcell samt ett sättför framställning av densamma |
GB201410542D0 (en) | 2014-06-12 | 2014-07-30 | Isis Innovation | Heterojunction device |
KR101623653B1 (ko) * | 2014-10-29 | 2016-05-23 | 고려대학교 산학협력단 | 페로브스카이트와 염료를 이용한 태양전지 및 그 제조 방법 |
US10192689B2 (en) | 2015-01-07 | 2019-01-29 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. | Self-assembly of perovskite for fabrication of transparent devices |
CN105024013A (zh) * | 2015-03-05 | 2015-11-04 | 苏州瑞晟纳米科技有限公司 | 一种新型的低温溶液法制备的高效率长寿命的平面异质结钙钛矿太阳能电池 |
CN104795464B (zh) | 2015-03-09 | 2016-09-07 | 浙江大学 | 一种利用发光多孔硅颗粒提高太阳能电池效率的方法 |
EP3427279B1 (en) * | 2016-03-10 | 2021-12-29 | Exeger Operations AB | A solar cell comprising grains of a doped semiconducting material and a method for manufacturing the solar cell |
-
2016
- 2016-11-21 SE SE1651521A patent/SE540184C2/en unknown
- 2016-12-26 TW TW105143179A patent/TWI715698B/zh active
-
2017
- 2017-01-10 CN CN201780046909.2A patent/CN109496370B/zh active Active
- 2017-01-10 AU AU2017302388A patent/AU2017302388B2/en active Active
- 2017-01-10 KR KR1020187034553A patent/KR102033273B1/ko active IP Right Grant
- 2017-01-10 ES ES17703239T patent/ES2884324T3/es active Active
- 2017-01-10 US US16/321,547 patent/US10998459B2/en active Active
- 2017-01-10 MX MX2019001200A patent/MX2019001200A/es unknown
- 2017-01-10 JP JP2018555520A patent/JP6635357B2/ja active Active
- 2017-01-10 EP EP17703239.8A patent/EP3491680B1/en active Active
- 2017-01-10 CA CA3022237A patent/CA3022237C/en active Active
- 2017-07-12 CA CA3022214A patent/CA3022214C/en active Active
- 2017-07-12 BR BR112019001351-2A patent/BR112019001351B1/pt active IP Right Grant
- 2017-07-12 US US16/321,640 patent/US11264520B2/en active Active
- 2017-07-12 EP EP17743280.4A patent/EP3491681B1/en active Active
- 2017-07-12 KR KR1020187034555A patent/KR102033274B1/ko active IP Right Grant
- 2017-07-12 ES ES17743280T patent/ES2828059T3/es active Active
- 2017-07-12 JP JP2018555532A patent/JP6694178B2/ja active Active
- 2017-07-12 AU AU2017303233A patent/AU2017303233B2/en active Active
- 2017-07-12 CN CN201780047320.4A patent/CN109564978B/zh active Active
- 2017-07-12 MX MX2019001203A patent/MX2019001203A/es unknown
- 2017-10-26 SE SE1751329A patent/SE541506C2/en unknown
-
2018
- 2018-06-29 US US16/629,364 patent/US11222988B2/en active Active
- 2018-06-29 ES ES18734824T patent/ES2874353T3/es active Active
- 2018-06-29 CN CN201880046039.3A patent/CN110892496B/zh active Active
- 2018-06-29 JP JP2020501213A patent/JP6768986B2/ja active Active
- 2018-06-29 KR KR1020207000360A patent/KR102130940B1/ko active IP Right Grant
- 2018-11-26 SA SA518400512A patent/SA518400512B1/ar unknown
- 2018-11-27 ZA ZA2018/08012A patent/ZA201808012B/en unknown
- 2018-11-27 ZA ZA2018/08013A patent/ZA201808013B/en unknown
- 2018-11-27 SA SA518400541A patent/SA518400541B1/ar unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08186245A (ja) * | 1994-12-28 | 1996-07-16 | Sony Corp | 量子構造の製造方法 |
JP2008143754A (ja) * | 2006-12-12 | 2008-06-26 | Union Material Kk | 球状シリコン結晶及びその製造方法 |
WO2012102343A1 (ja) * | 2011-01-26 | 2012-08-02 | 国立大学法人山口大学 | シリコン融液接触部材、その製法、および結晶シリコンの製造方法 |
US9859348B2 (en) * | 2011-10-14 | 2018-01-02 | Diftek Lasers, Inc. | Electronic device and method of making thereof |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6694178B2 (ja) | 太陽光発電デバイスを製造するための方法 | |
WO2018019598A1 (en) | A method for producing a photovoltaic device | |
EP3652763B1 (en) | A photovoltaic device having a light absorbing layer including a plurality of grains of a doped semiconducting material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20190517 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190509 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20190710 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190723 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191016 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191112 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200124 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200310 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200402 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6694178 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |