JP2019514214A - 半導体処理チャンバ - Google Patents
半導体処理チャンバ Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 133
- 239000012530 fluid Substances 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 238000004891 communication Methods 0.000 claims abstract description 17
- 230000004913 activation Effects 0.000 claims abstract description 13
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 90
- 238000005086 pumping Methods 0.000 claims description 39
- 238000010926 purge Methods 0.000 claims description 21
- 239000012190 activator Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 description 11
- 238000001994 activation Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
Description
Claims (15)
- 壁を伴う本体であって、前記本体の内部で前記壁が2つの処理チャンバを画定している、本体と、
前記2つの処理チャンバの間に流体的な連結を形成している、前記壁を通る通路と、
前記本体に取り外し可能に連結されたリッドであって、前記通路と流体連結している入口を有するリッドと、
前記処理チャンバの外部で前記リッドに連結されたガス活性装置であって、前記リッドの前記入口と流体連結している出口を有する、ガス活性装置と、
各処理チャンバ内に配置された基板支持体であって、各々が少なくとも2つの加熱ゾーンを有する、基板支持体と、
各基板支持体に面している、前記リッドに連結されたガス分配装置と、
各ガス分配装置のエッジにおいて前記リッドに連結された熱制御部材とを備える、半導体処理装置。 - 前記通路内に化学的に不活性なライナを更に備え、前記化学的に不活性なライナが、前記リッドの入口と位置が合っている開口を有する、請求項1に記載の半導体処理装置。
- 前記ガス活性装置の注入口に連結された、活性化ガスのソース、酸素含有ガスのソース、窒素含有ガスのソース、及び、プロロンギングガスのソースを更に備える、請求項1に記載の半導体処理装置。
- 前記活性化ガスはAr又はHeであり、前記酸素含有ガスはO2、CO、又はCO2であり、前記窒素含有ガスはN2、NF3、又はNH3であり、前記プロロンギングガスはN2又はHeである、請求項3に記載の半導体処理装置。
- 前記基板支持体が、複数の基板支持面を備える基板支持エリアであって、前記複数の基板支持面は前記基板支持エリアから延在している、基板支持エリアと、複数の位置特定フィーチャを伴う壁であって、複数の位置特定フィーチャは前記基板支持エリアを取り囲む前記壁から延在している、壁とを有する、請求項1に記載の半導体処理装置。
- 各処理チャンバが、排気開口を伴うフロアと、前記フロアに連結されたポンピングブロックとを有し、前記ポンピングブロックは、前記排気開口と整合している開口と、複数のポンピング入口によって前記ポンピングブロックの前記開口に連結された環状ポンピングチャネルと、前記環状ポンピングチャネルに流体的に連結された出口とを有し、前記基板支持体は、前記排気開口及び前記ポンピングブロックの開口を通るように配置された導管を有する、請求項5に記載の半導体処理装置。
- 前記本体が前記本体の外部壁を通る、各処理チャンバのための基板アクセス開口を有し、前記外部壁が、各基板アクセス開口と流体連結しているパージガス入口を有する、請求項1に記載の半導体処理装置。
- 前記外部壁が、リッドの近位の第1エッジと、前記第1エッジの反対側の第2エッジとを有し、前記パージガス入口は前記外部壁の前記第1エッジに形成され、前記外部壁を通る通路が、各基板アクセス開口と対応するパージガス入口とを流体的に連結している、請求項7に記載の半導体処理装置。
- 各基板アクセス開口が、複数のグループになるよう配置された複数のパージガス入口を有する、請求項8に記載の半導体処理装置。
- 壁を伴う本体であって、前記本体の内部で前記壁が2つの処理チャンバを画定している、本体と、
前記2つの処理チャンバの間に流体的な連結を形成している、前記壁を通る通路と、
前記本体に取り外し可能に連結されたリッドであって、前記通路と流体連結している入口を有するリッドと、
前記処理チャンバの外部で前記リッドに連結されたガス活性装置であって、前記リッドの前記入口と流体連結している出口を有する、ガス活性装置と、
各処理チャンバ内に配置された基板支持体であって、各々が、少なくとも2つの加熱ゾーンと1つの基板支持エリアとを有し、前記基板支持エリアは、前記基板支持エリアから延在している複数の基板支持面を備える、基板支持体と、
各基板支持体に面している、前記リッドに連結されたガス分配装置と、
各ガス分配装置のエッジにおいて前記リッドに連結された熱制御部材とを備える、半導体処理装置。 - 前記基板支持体が、複数の位置特定フィーチャを伴う壁であって、前記複数の位置特定フィーチャは前記基板支持エリアを取り囲む前記壁から延在している、壁を有する、請求項10に記載の半導体処理装置。
- 各処理チャンバが、排気開口を伴うフロアと、前記フロアに連結されたポンピングブロックとを有し、前記ポンピングブロックは、前記排気開口と整合している開口と、複数のポンピング入口によって前記ポンピングブロックの前記開口に連結された環状ポンピングチャネルと、前記環状ポンピングチャネルに流体的に連結された出口とを有し、前記基板支持体は、前記排気開口及び前記ポンピングブロックの開口を通るように配置された導管を有する、請求項11に記載の半導体処理装置。
- 前記通路内に石英ライナを更に備え、前記石英ライナは、前記リッドの入口と位置が合っている開口を有する、請求項10に記載の半導体処理装置。
- 壁を伴う本体であって、前記本体の内部で前記壁が2つの処理チャンバを画定している、本体と、
前記2つの処理チャンバの間に流体的な連結を形成している、前記壁を通る通路と、
前記本体に取り外し可能に連結されたリッドであって、前記通路と流体連結している入口を有するリッドと、
前記処理チャンバの外部で前記リッドに連結された遠隔プラズマユニットであって、前記リッドの前記入口と流体連結している出口を有する、遠隔プラズマユニットと、
各処理チャンバ内に配置された基板支持体であって、各々が、少なくとも2つの加熱ゾーンと1つの基板支持エリアとを有し、前記基板支持エリアは、前記基板支持エリアから延在している複数の基板支持面を備える、基板支持体と、
各基板支持体に面している、前記リッドに連結されたガス分配装置と、
各ガス分配装置のエッジにおいて前記リッドに連結された熱制御部材とを備える、半導体処理装置。 - 各処理チャンバが、排気開口を伴うフロアと、前記フロアに連結されたポンピングブロックとを有し、前記ポンピングブロックは、前記排気開口と整合している開口と、複数のポンピング入口によって前記ポンピングブロックの前記開口に連結された環状ポンピングチャネルと、前記環状ポンピングチャネルに流体的に連結された出口とを有し、前記基板支持体は、前記排気開口及び前記ポンピングブロックの開口を通るように配置された導管を有する、請求項14に記載の半導体処理装置。
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