JP2019186506A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2019186506A JP2019186506A JP2018079323A JP2018079323A JP2019186506A JP 2019186506 A JP2019186506 A JP 2019186506A JP 2018079323 A JP2018079323 A JP 2018079323A JP 2018079323 A JP2018079323 A JP 2018079323A JP 2019186506 A JP2019186506 A JP 2019186506A
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- Prior art keywords
- insulating region
- region
- insulating
- concentration
- metal
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 215
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 186
- 229910052751 metal Inorganic materials 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 101
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 93
- 150000001875 compounds Chemical class 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910052702 rhenium Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910004121 SrRuO Inorganic materials 0.000 claims description 4
- 230000000087 stabilizing effect Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 13
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 150000002431 hydrogen Chemical class 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
Description
図面は模式的または概念的なものであり、各部分の厚さと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1は、第1実施形態に係る半導体装置を例示する模式的断面図である。
図1に示すように、実施形態に係る半導体装置110は、第1〜第3半導体領域11〜13、第1〜第3電極61〜63、及び第1絶縁部31を含む。第1〜第3半導体領域11〜13は、例えば、シリコンを含む。
図2に示すように、半導体装置111は、第3絶縁部33及び第4電極64をさらに含む。第3絶縁部33は、第1方向(Z軸方向)において、第1部分領域11aと第2絶縁領域31bとの間、及び、第1部分領域11aと第3絶縁領域31cとの間に設けられる。第4電極64は、第1方向(Z軸方向)において、第2絶縁領域31bと第3絶縁部33との間に設けられる。第3絶縁部33の一部は、第2方向(X軸方向)において、第2部分領域11bと第4電極64との間に位置する。それ以外は、図1に示す半導体装置110と同様である。第4電極64は、例えば、第2のソース電極として機能する。この場合、例えば、第4電極64は、第2電極62と電気的に接続される。第3絶縁部33は、例えば、層間絶縁膜として機能する。
図3(a)〜図3(d)は、第1実施形態に係る別の半導体装置の製造方法を例示する模式的断面図である。
図3(a)に示すように、基材70を準備する。基材70は、第1〜第5半導体領域11〜15、半導体層10L、第3絶縁部33、及び第4電極64を含む。例えば、半導体層10Lの上に、第1半導体領域11が設けられる。第1半導体領域11の上に、第3半導体領域13及び第5半導体領域15が設けられる。第3半導体領域13の上に、第2半導体領域12が設けられる。第5半導体領域15の上に、第4半導体領域14が設けられる。第1半導体領域11に設けられた凹部内に、第3絶縁部33が設けられる。第3絶縁部33に設けられた凹部内に、第4電極64が設けられる。
図4は、第2実施形態に係る半導体装置を例示する模式的断面図である。
図4に示すように、半導体装置120は、第1〜第5半導体領域11〜15、半導体層10L、第1〜第3電極61〜63、第1絶縁部31、及び第2絶縁部32を含む。第1絶縁部31は、第1〜第8絶縁領域31a〜31hを含む。
図5に示すように、半導体装置121は、第3絶縁部33及び第4電極64をさらに含む。第3絶縁部33は、第1方向(Z軸方向)において、第1部分領域11aと第2絶縁領域31bとの間、及び、第1部分領域11aと第3絶縁領域31cとの間に設けられる。第4電極64は、第1方向(Z軸方向)において、第2絶縁領域31bと第3絶縁部33との間に設けられる。第3絶縁部33の一部は、第2方向(X軸方向)において、第2部分領域11bと第4電極64との間に位置する。それ以外は、図4に示す半導体装置120と同様である。第4電極64は、例えば、第2のソース電極として機能する。この場合、例えば、第4電極64は、第2電極62と電気的に接続される。第3絶縁部33は、例えば、層間絶縁膜として機能する。
図6(a)〜図6(d)は、第2実施形態に係る別の半導体装置の製造方法を例示する模式的断面図である。
図6(a)に示すように、基材71を準備する。基材71は、第1〜第5半導体領域11〜15、半導体層10L、第3絶縁部33、第4電極64、第1絶縁膜31F、及び第1電極61を含む。例えば、半導体層10Lの上に、第1半導体領域11が設けられる。第1半導体領域11の上に、第3半導体領域13及び第5半導体領域15が設けられる。第3半導体領域13の上に、第2半導体領域12が設けられる。第5半導体領域15の上に、第4半導体領域14が設けられる。第1半導体領域11に設けられた凹部内に、第3絶縁部33が設けられる。第3絶縁部33に設けられた凹部内に、第4電極64が設けられる。第3絶縁部33の上及び第4電極64の上に、第1絶縁膜31Fが設けられる。第1絶縁膜31Fに設けられた凹部内に、第1電極61が設けられる。第1絶縁膜31Fは、例えば、酸化シリコンなどを含む。第1絶縁膜31Fは、例えば、実質的にSi3N4を含まない。第1絶縁膜31Fは、第1絶縁部31の第1絶縁領域31a、第2絶縁領域31b、第3絶縁領域31c、第6絶縁領域31f、及び第7絶縁領域31gになる。
図7は、第3実施形態に係る半導体装置を例示する模式的断面図である。
図7に示すように、半導体装置130は、第1〜第5半導体領域11〜15、半導体層10L、第1〜第3電極61〜63、第1絶縁部31、及び第2絶縁部32を含む。第1絶縁部31は、第1〜第8絶縁領域31a〜31hを含む。
図8に示すように、半導体装置131は、第3絶縁部33及び第4電極64をさらに含む。第3絶縁部33は、第1方向(Z軸方向)において、第1部分領域11aと第2絶縁領域31bとの間、及び、第1部分領域11aと第3絶縁領域31cとの間に設けられる。第4電極64は、第1方向(Z軸方向)において、第2絶縁領域31bと第3絶縁部33との間に設けられる。第3絶縁部33の一部は、第2方向(X軸方向)において、第2部分領域11bと第4電極64との間に位置する。それ以外は、図7に示す半導体装置130と同様である。第4電極64は、例えば、第2のソース電極として機能する。この場合、例えば、第4電極64は、第2電極62と電気的に接続される。第3絶縁部33は、例えば、層間絶縁膜として機能する。
Claims (10)
- 第1部分領域及び第2部分領域を含み、第1導電形の第1半導体領域と、
前記第1導電形の第2半導体領域であって、前記第2部分領域から前記第2半導体領域への第1方向は、前記第2部分領域から前記第1部分領域への第2方向と交差した、前記第2半導体領域と、
前記第1方向において前記第2部分領域と前記第2半導体領域との間に設けられた第2導電形の第3半導体領域と、
第1電極であって、前記第3半導体領域から前記第1電極への方向は、前記第2方向に沿う、前記第1電極と、
前記第2半導体領域と電気的に接続された第2電極と、
前記第1半導体領域と電気的に接続された第3電極と、
第1絶縁部であって、
前記第2方向において前記第3半導体領域と前記第1電極との間に設けられた第1絶縁領域と、
前記第1方向において前記第1部分領域と前記第1電極との間に設けられた第2絶縁領域と、
前記第1方向において前記第1部分領域と前記第1絶縁領域との間に設けられた第3絶縁領域と、
を含む、前記第1絶縁部と、
を備え、
前記第1絶縁領域及び前記第3絶縁領域は、第1〜第5条件の少なくともいずれかを満たし、
前記第1条件において、前記第3絶縁領域は、窒素を含み、前記第1絶縁領域は、窒素を含まず、
前記第2条件において、前記第1絶縁領域及び前記第3絶縁領域は、窒素を含み、前記第1絶縁領域における窒素の濃度は、前記第3絶縁領域における窒素の濃度よりも低く、
前記第3条件において、前記第3絶縁領域は、Al、Ti、Mg、Zr、Ta、Ce、Ir、Ru、Re、及びSrよりなる群から選ばれた少なくとも1つの第1金属を含み、前記第1絶縁領域は、前記第1金属を含まず、
前記第4条件において、前記第1絶縁領域及び前記第3絶縁領域は、前記第1金属を含み、前記第1絶縁領域における前記第1金属の濃度は、前記第3絶縁領域における前記第1金属の濃度よりも低く、
前記第5条件において、前記第1絶縁領域は、SiOz1を含み、前記第3絶縁領域は、SiOz2(z1<z2)を含む、半導体装置。 - 前記第3絶縁領域における水素の拡散係数は、1×10−13cm2/s以下である、請求項1記載の半導体装置。
- 前記第3絶縁領域は、Si3N4、AlN、WN、AlxOy、TiOx、MgOx、ZrOx、Ta5O3、CeO2、IrOx、RuOx、ReOx、AlxSiyOz、MgTiOx、及びSrRuO3よりなる群から選ばれる少なくとも1つの第1化合物を含み、
前記第1絶縁領域は、前記第1化合物を含まない、または、前記第1化合物を含み、前記第1絶縁領域における前記第1化合物の濃度は、前記第3絶縁領域における前記第1化合物の濃度よりも低い、請求項1または2に記載の半導体装置。 - 前記第1絶縁領域及び前記第2絶縁領域は、第21〜第25条件の少なくともいずれかを満たし、
前記第21条件において、前記第2絶縁領域は、窒素を含み、前記第1絶縁領域は、窒素を含まず、
前記第22条件において、前記第1絶縁領域及び前記第2絶縁領域は、窒素を含み、前記第1絶縁領域における窒素の濃度は、前記第2絶縁領域における窒素の濃度よりも低く、
前記第23条件において、前記第2絶縁領域は、前記第1金属を含み、前記第1絶縁領域は、前記第1金属を含まず、
前記第24条件において、前記第1絶縁領域及び前記第2絶縁領域は、前記第1金属を含み、前記第1絶縁領域における前記第1金属の濃度は、前記第2絶縁領域における前記第1金属の濃度よりも低く、
前記第25条件において、前記第1絶縁領域は、SiOz1を含み、前記第2絶縁領域は、SiOz2(z1<z2)を含む、請求項1〜3のいずれか1つに記載の半導体装置。 - 第1部分領域及び第2部分領域を含み、第1導電形の第1半導体領域と、
前記第1導電形の第2半導体領域であって、前記第2部分領域から前記第2半導体領域への第1方向は、前記第2部分領域から前記第1部分領域への第2方向と交差した、前記第2半導体領域と、
前記第1方向において前記第2部分領域と前記第2半導体領域との間に設けられた第2導電形の第3半導体領域と、
第1電極であって、前記第3半導体領域から前記第1電極への方向は、前記第2方向に沿う、前記第1電極と、
前記第2半導体領域と電気的に接続された第2電極と、
前記第1半導体領域と電気的に接続された第3電極と、
第1絶縁部であって、
前記第2方向において前記第3半導体領域と前記第1電極との間に設けられた第1絶縁領域と、
前記第1方向において前記第1部分領域と前記第1電極との間に設けられた第2絶縁領域と、
前記第1方向において前記第1部分領域と前記第1絶縁領域との間に設けられた第3絶縁領域と、
第4絶縁領域であって、前記第1方向において前記第1絶縁領域は前記第3絶縁領域と前記第4絶縁領域との間に位置する、前記第4絶縁領域と、
を含む、前記第1絶縁部と、
を備え、
前記第1絶縁領域及び前記第4絶縁領域は、第6〜第10条件の少なくともいずれかを満たし、
前記第6条件において、前記第4絶縁領域は、窒素を含み、前記第1絶縁領域は、窒素を含まず、
前記第7条件において、前記第1絶縁領域及び前記第4絶縁領域は、窒素を含み、前記第1絶縁領域における窒素の濃度は、前記第4絶縁領域における窒素の濃度よりも低く、
前記第8条件において、前記第4絶縁領域は、Al、Ti、Mg、Zr、Ta、Ce、Ir、Ru、Re、及びSrよりなる群から選ばれた少なくとも1つの第2金属を含み、前記第1絶縁領域は、前記第2金属を含まず、
前記第9条件において、前記第1絶縁領域及び前記第4絶縁領域は、前記第2金属を含み、前記第1絶縁領域における前記第2金属の濃度は、前記第4絶縁領域における前記第2金属の濃度よりも低く、
前記第10条件において、前記第1絶縁領域は、SiOz1を含み、前記第4絶縁領域は、SiOz2(z1<z2)を含む、半導体装置。 - 前記第4絶縁領域における水素の拡散係数は、1×10−13cm2/s以下である、請求項5記載の半導体装置。
- 前記第4絶縁領域は、Si3N4、AlN、WN、AlxOy、TiOx、MgOx、ZrOx、Ta5O3、CeO2、IrOx、RuOx、ReOx、AlxSiyOz、MgTiOx、及びSrRuO3よりなる群から選ばれる少なくとも1つの第1化合物を含み、
前記第1絶縁領域は、前記第1化合物を含まない、または、前記第1化合物を含み、前記第1絶縁領域における前記第1化合物の濃度は、前記第4絶縁領域における前記第1化合物の濃度よりも低い、請求項5または6に記載の半導体装置。 - 前記第1絶縁領域及び前記第5絶縁領域は、第26〜第30条件の少なくともいずれかを満たし、
前記第26条件において、前記第5絶縁領域は、窒素を含み、前記第1絶縁領域は、窒素を含まず、
前記第27条件において、前記第1絶縁領域及び前記第5絶縁領域は、窒素を含み、前記第1絶縁領域における窒素の濃度は、前記第5絶縁領域における窒素の濃度よりも低く、
前記第28条件において、前記第5絶縁領域は、前記第2金属を含み、前記第1絶縁領域は、前記第2金属を含まず、
前記第29条件において、前記第1絶縁領域及び前記第5絶縁領域は、前記第2金属を含み、前記第1絶縁領域における前記第2金属の濃度は、前記第5絶縁領域における前記第2金属の濃度よりも低く、
前記第30条件において、前記第1絶縁領域は、SiOz1を含み、前記第5絶縁領域は、SiOz2(z1<z2)を含む、半導体装置。 - 前記第1絶縁領域及び前記第3絶縁領域は、第1〜第5条件の少なくともいずれかを満たし、
前記第1条件において、前記第3絶縁領域は、窒素を含み、前記第1絶縁領域は、窒素を含まず、
前記第2条件において、前記第1絶縁領域及び前記第3絶縁領域は、窒素を含み、前記第1絶縁領域における窒素の濃度は、前記第3絶縁領域における窒素の濃度よりも低く、
前記第3条件において、前記第3絶縁領域は、Al、Ti、Mg、Zr、Ta、Ce、Ir、Ru、Re、及びSrよりなる群から選ばれた少なくとも1つの第1金属を含み、前記第1絶縁領域は、前記第1金属を含まず、
前記第4条件において、前記第1絶縁領域及び前記第3絶縁領域は、前記第1金属を含み、前記第1絶縁領域における前記第1金属の濃度は、前記第3絶縁領域における前記第1金属の濃度よりも低く、
前記第5条件において、前記第1絶縁領域は、SiOz1を含み、前記第3絶縁領域は、SiOz2(z1<z2)を含む、請求項5〜8のいずれか1つに記載の半導体装置。 - 前記第1絶縁領域及び前記第2絶縁領域は、第21〜第25条件の少なくともいずれかを満たし、
前記第21条件において、前記第2絶縁領域は、窒素を含み、前記第1絶縁領域は、窒素を含まず、
前記第22条件において、前記第1絶縁領域及び前記第2絶縁領域は、窒素を含み、前記第1絶縁領域における窒素の濃度は、前記第2絶縁領域における窒素の濃度よりも低く、
前記第23条件において、前記第2絶縁領域は、前記第1金属を含み、前記第1絶縁領域は、前記第1金属を含まず、
前記第24条件において、前記第1絶縁領域及び前記第2絶縁領域は、前記第1金属を含み、前記第1絶縁領域における前記第1金属の濃度は、前記第2絶縁領域における前記第1金属の濃度よりも低く、
前記第25条件において、前記第1絶縁領域は、SiOz1を含み、前記第2絶縁領域は、SiOz2(z1<z2)を含む、請求項9記載の半導体装置。
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