JP2019157199A - Substrate holder and plating apparatus for electrode formation - Google Patents

Substrate holder and plating apparatus for electrode formation Download PDF

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JP2019157199A
JP2019157199A JP2018045103A JP2018045103A JP2019157199A JP 2019157199 A JP2019157199 A JP 2019157199A JP 2018045103 A JP2018045103 A JP 2018045103A JP 2018045103 A JP2018045103 A JP 2018045103A JP 2019157199 A JP2019157199 A JP 2019157199A
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metal
plated
substrate
substrate holder
fitting
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小井　洋平
Yohei Koi
洋平 小井
末崎　恭
Yasushi Suezaki
恭 末崎
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Kaneka Corp
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Kaneka Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

To suppress occurrence of a positional deviation between two mating parts in a substrate holder where two supporting members mate with each other.SOLUTION: A substrate holder disclosed here includes: a terminal part; a first supporting member electrically connected to the terminal part; and a second supporting member for holding a to-be-plated substrate by being mated with the first supporting member. The first supporting member includes: a first body; a first power feeding part electrically connected to the terminal part, being fixed on the first body; and a first mating part electrically connected to the terminal part, being fixed on the first body. The second supporting member includes: a second body; a second mating part electrically connected to the terminal part by being mated with the first mating part, being fixed on the second body; and a second power feeding part electrically connected to the second mating part, being fixed on the second body. Either of the first and second mating parts is fixed on the first body or the second body through an elastomer.SELECTED DRAWING: Figure 7

Description

本発明は、電解めっきにより太陽電池に金属電極を形成する際に用いる基板ホルダ、及び当該基板ホルダを用いた電極形成用めっき装置に関する。   The present invention relates to a substrate holder used when forming a metal electrode on a solar cell by electrolytic plating, and a plating apparatus for forming an electrode using the substrate holder.

太陽電池では、半導体接合を有する光電変換部への光照射により発生したキャリア（電子および正孔）を、光電変換部の表面に設けられた金属電極を介して外部回路に取り出すことにより発電がおこなわれる。受光面では、金属電極によるシャドーイングロスを低減するために、金属電極がパターン状に形成される。金属電極のパターンとしては、フィンガー電極およびバスバー電極からなるグリッドパターンが典型的である。裏面側にも受光面と同様にパターン状の金属電極が形成される場合がある。   In a solar cell, power is generated by taking out carriers (electrons and holes) generated by light irradiation to a photoelectric conversion unit having a semiconductor junction to an external circuit through a metal electrode provided on the surface of the photoelectric conversion unit. It is. On the light receiving surface, the metal electrode is formed in a pattern in order to reduce shadowing loss due to the metal electrode. A typical metal electrode pattern is a grid pattern made up of finger electrodes and bus bar electrodes. A patterned metal electrode may be formed on the back side as well as the light receiving surface.

電極材料コストの低減等を目的として、めっき法により太陽電池の金属電極を形成する方法が提案されている。例えば、光電変換部の表面に、パターン開口を有する絶縁層（レジスト等）設け、絶縁層の開口下に露出した金属シードを起点とする電解めっきにより、パターン状の金属電極が形成される。特許文献１では、所定の基板ホルダを用い、光電変換部の表面と裏面を等電位として、電解めっきにより、表裏両面に金属電極を形成する方法を開示している。   For the purpose of reducing the electrode material cost, a method of forming a metal electrode of a solar cell by a plating method has been proposed. For example, an insulating layer (resist or the like) having a pattern opening is provided on the surface of the photoelectric conversion portion, and a patterned metal electrode is formed by electrolytic plating starting from a metal seed exposed under the opening of the insulating layer. Patent Document 1 discloses a method of forming metal electrodes on both front and back surfaces by electrolytic plating using a predetermined substrate holder, with the front and back surfaces of the photoelectric conversion unit being equipotential.

国際公開第２０１５／０２９８６４号International Publication No. 2015/029864

電解めっきに用いる基板ホルダとして、太陽電池基板を挟持する二つの支持部材を備え、それぞれの嵌合部を嵌合させて導通させるようなものを用いる場合、二つの支持部材の寸法精度によっては、その相対的な位置がずれ、一方の支持部材における嵌合部と、他方の支持部材における嵌合部と、の位置がずれてしまい、所期の嵌合を行えない場合が有ることが課題となっていた。   As a substrate holder used for electrolytic plating, provided with two support members for sandwiching the solar cell substrate, and using what fits and engages each fitting portion, depending on the dimensional accuracy of the two support members, The relative position shifts, the position of the fitting part in one supporting member and the fitting part in the other supporting member shifts, and there is a problem that the intended fitting may not be performed. It was.

そこで、本開示においては、二つの支持部材を互いに嵌合させた基板ホルダにおいて、二つの支持部材の相対的な位置がずれたとしても、所期の嵌合を実現することを目的とする。   Therefore, an object of the present disclosure is to realize a desired fitting even when the relative positions of the two supporting members are shifted in the substrate holder in which the two supporting members are fitted to each other.

本開示の基板ホルダは、端子部と、前記端子部と電気的に接続された第１の支持部材と、前記第１の支持部材と嵌合されることで被めっき基板を保持する第２の支持部材と、を含む、基板ホルダであって、前記第１の支持部材は、第１の本体と、前記第１の本体に取り付けられ、前記端子部に電気的に接続された第１の給電部と、前記第１の本体に取り付けられ、前記端子部に電気的に接続された第１の嵌合部と、を含み、前記第２の支持部材は、第２の本体と、前記第２の本体に取り付けられ、前記第１の嵌合部と嵌合されることで前記端子部と電気的に接続される第２の嵌合部と、前記第２の本体に取り付けられ、前記第２の嵌合部と電気的に接続された第２の給電部と、を含み、前記第１の嵌合部、前記第２の嵌合部の内のいずれか少なくとも一方が、弾性体を介して前記第１の本体又は前記第２の本体に取り付けられている。   The substrate holder of the present disclosure includes a terminal portion, a first support member electrically connected to the terminal portion, and a second holding member to be plated by being fitted to the first support member. A substrate holder including a support member, wherein the first support member is attached to the first main body and the first main body, and is electrically connected to the terminal portion. And a first fitting portion attached to the first body and electrically connected to the terminal portion, wherein the second support member includes the second body and the second body A second fitting portion that is electrically connected to the terminal portion by being fitted to the first fitting portion, and the second fitting portion is attached to the second body. A second power feeding portion electrically connected to the fitting portion of the first fitting portion, and any one of the first fitting portion and the second fitting portion. Kutomo one of which is attached to the first body or the second body via the elastic body.

上記基板ホルダは、前記第１の嵌合部、前記第２の嵌合部の内のいずれか一方が、他方に向けて突出するプラグ部を有し、いずれか他方が、前記プラグ部が挿入されるソケット部を有し、前記ソケット部が、狭隘部と、前記狭隘部から先端に向けて広がるテーパ部と、を有する構成としてもよい。   The substrate holder includes a plug portion in which one of the first fitting portion and the second fitting portion protrudes toward the other, and the other is inserted into the plug portion. It is good also as a structure which has the socket part made and has the narrow part and the taper part which spreads toward the front-end | tip from the said narrow part.

上記基板ホルダは、前記第１の嵌合部、前記第２の嵌合部の内のいずれか一方が、他方に向けて突出するプラグ部を有し、いずれか他方が、前記プラグ部が挿入されるソケット部を有し、前記ソケット部が狭隘部を有し、前記プラグ部の表面が、前記ソケット部の前記狭隘部の内表面と擦れながら、前記ソケット部内に挿入された構成としてもよい。   The substrate holder includes a plug portion in which one of the first fitting portion and the second fitting portion protrudes toward the other, and the other is inserted into the plug portion. The socket portion may have a narrow portion, and the plug portion may be inserted into the socket portion while rubbing against the inner surface of the narrow portion of the socket portion. .

上記基板ホルダは、前記第１の給電部と前記第１の本体との間、前記第２の給電部と前記第２の本体との間、の内の少なくとも一方には、弾性体が介在する構成としてもよい。   In the substrate holder, an elastic body is interposed between at least one of the first power supply unit and the first main body and between the second power supply unit and the second main body. It is good also as a structure.

上記基板ホルダにおいて、前記第１の本体は、前記端子部、前記第１の給電部、及び前記第１の嵌合部を電気的に接続する第１の金属部と、前記第１の金属部の表面を覆う第１の絶縁部と、を含み、前記第２の本体は、前記第２の嵌合部と、前記第２の給電部と、を電気的に接続する第２の金属部と、前記第２の金属部の表面を覆う第２の絶縁部と、を含む構成としてもよい。   In the substrate holder, the first main body includes a first metal portion that electrically connects the terminal portion, the first power feeding portion, and the first fitting portion, and the first metal portion. A first insulating portion that covers a surface of the second body, and the second main body includes a second metal portion that electrically connects the second fitting portion and the second power feeding portion. And a second insulating part that covers the surface of the second metal part.

本開示の電極形成用めっき装置は、めっき浴槽と、前記めっき浴槽内に配置された請求項１乃至５のいずれか一つに記載の基板ホルダと、前記めっき浴槽内に配置されたアノード電極と、前記端子部と前記アノード電極との間に電圧を印加する電源と、を含む。   The plating apparatus for electrode formation of this indication is a plating bath, the substrate holder as described in any one of Claims 1 thru | or 5 arrange | positioned in the said plating bath, The anode electrode arrange | positioned in the said plating bath, And a power source for applying a voltage between the terminal portion and the anode electrode.

図１は一実施形態の太陽電池の模式的断面図である。FIG. 1 is a schematic cross-sectional view of a solar cell according to an embodiment. 図２は一実施形態の太陽電池の平面図である。FIG. 2 is a plan view of a solar cell according to an embodiment. 図３は一実施形態の被めっき基板の模式的断面図である。FIG. 3 is a schematic cross-sectional view of a substrate to be plated according to an embodiment. 図４は一実施形態のめっき装置の構成概念図である。FIG. 4 is a conceptual diagram of a configuration of a plating apparatus according to an embodiment. 図５Ａは第１のめっき工程における通電状態を示す図である。FIG. 5A is a diagram showing an energized state in the first plating step. 図５Ｂは第２のめっき工程における通電状態を示す図である。FIG. 5B is a diagram showing an energized state in the second plating step. 図６は一実施形態のめっき装置の構成概念図である。FIG. 6 is a conceptual diagram of the configuration of a plating apparatus according to an embodiment. 図７は図４のVII部を拡大した模式的な側面図である。FIG. 7 is a schematic side view in which the VII portion of FIG. 4 is enlarged. 図８は一実施形態の第１の支持部材の模式的な平面図である。FIG. 8 is a schematic plan view of the first support member of the embodiment. 図９は一実施形態の第２の支持部材の模式的な平面図である。FIG. 9 is a schematic plan view of a second support member according to an embodiment. 図１０は一実施形態の基板ホルダと被めっき基板を示す模式的な平面図である。FIG. 10 is a schematic plan view showing a substrate holder and a substrate to be plated according to one embodiment.

図１は、太陽電池の一実施形態を示す模式的断面図である。太陽電池２００は、光電変換部４０の第１の主面にパターン状の第１の金属電極１１０を備え、第２の主面にパターン状の第２の金属電極１２０を備える。第１の金属電極１１０，第２の金属電極１２０は、光電変換部側から、第１の金属シード６１，第２の金属シード６２、および第１のめっき金属電極８１，第２のめっき金属電極８２を有する。図１に示す太陽電池２００は、いわゆるヘテロ接合太陽電池であり、結晶シリコン基板の表面にシリコン系薄膜が設けられることにより、半導体接合が形成されている。なお、ここでは、ヘテロ接合型太陽電池素子の場合を例にあげ説明するが、Ａｌ−ＢＳＦ（Ａｌｕｍｉｎｕｍ Ｂａｃｋ Ｓｕｒｆａｃｅ Ｆｉｅｌｄ）構造やＰＥＲＣ（Ｐａｓｓｉｖａｔｅｄ Ｅｍｉｔｔｅｒ ａｎｄ Ｒｅａｒ Ｃｅｌｌ）構造等の各種結晶シリコン太陽電池素子にも適用可能である。   FIG. 1 is a schematic cross-sectional view showing one embodiment of a solar cell. The solar cell 200 includes a patterned first metal electrode 110 on the first main surface of the photoelectric conversion unit 40, and includes a patterned second metal electrode 120 on the second main surface. The first metal electrode 110 and the second metal electrode 120 are, from the photoelectric conversion unit side, the first metal seed 61, the second metal seed 62, the first plating metal electrode 81, and the second plating metal electrode. 82. The solar cell 200 shown in FIG. 1 is a so-called heterojunction solar cell, and a semiconductor junction is formed by providing a silicon-based thin film on the surface of a crystalline silicon substrate. Here, the case of a heterojunction solar cell element will be described as an example. However, for various crystalline silicon solar cell elements such as an Al-BSF (Aluminum Back Surface Field) structure and a PERC (Passivated Emitter and Rear Cell) structure. Is also applicable.

図２は、太陽電池の第１の主面の平面図であり、複数のフィンガー電極１１２およびフィンガー電極と直交するバスバー電極１１１からなるグリッド状にパターン状の第１の金属電極１１０が設けられている。第２の主面の第２の金属電極１２０も、第１の主面と同様、パターン状に形成される。第１の主面の第１の金属電極１１０のパターン形状と第２の主面の第２の金属電極１２０のパターン形状は同一でも異なっていてもよい。例えば、裏面側は受光面側に比べてシャドーイングロスの影響が小さいため、裏面側の金属電極形成領域の面積を大きくしてもよい。例えば、裏面側のフィンガー電極の形成密度を受光面側のフィンガー電極の形成密度よりも大きくする（裏面側のフィンガー電極の本数を増やす）ことにより、裏面側の金属電極の形成面積が増大する。裏面側のフィンガー電極の本数は、受光面側のフィンガー電極の本数の１．５倍〜３倍程度が好ましい。   FIG. 2 is a plan view of the first main surface of the solar cell, in which a patterned first metal electrode 110 is provided in a grid shape including a plurality of finger electrodes 112 and a bus bar electrode 111 orthogonal to the finger electrodes. Yes. Similarly to the first main surface, the second metal electrode 120 on the second main surface is also formed in a pattern. The pattern shape of the first metal electrode 110 on the first main surface and the pattern shape of the second metal electrode 120 on the second main surface may be the same or different. For example, since the back surface side is less affected by shadowing loss than the light receiving surface side, the area of the metal electrode formation region on the back surface side may be increased. For example, by increasing the formation density of the finger electrodes on the back surface side than the formation density of the finger electrodes on the light receiving surface side (increasing the number of finger electrodes on the back surface side), the formation area of the metal electrodes on the back surface side increases. The number of finger electrodes on the back surface side is preferably about 1.5 to 3 times the number of finger electrodes on the light receiving surface side.

図３は、図１に示すヘテロ接合太陽電池の形成に用いられる被めっき基板の断面図である。被めっき基板２は、光電変換部４０の第１の主面上に第１の下地導電層７１を備え、光電変換部４０の第２の主面上に第２の下地導電層７２を備える。光電変換部４０はｐｎ接合またはｐｉｎ接合を有し、第１の主面がｎ側、第２の主面がｐ側である。   FIG. 3 is a cross-sectional view of a substrate to be plated used for forming the heterojunction solar cell shown in FIG. The to-be-plated substrate 2 includes a first base conductive layer 71 on the first main surface of the photoelectric conversion unit 40, and includes a second base conductive layer 72 on the second main surface of the photoelectric conversion unit 40. The photoelectric conversion unit 40 has a pn junction or a pin junction, and the first main surface is the n side and the second main surface is the p side.

図４は、めっき金属電極の形成に用いられるめっき装置の概略構成図である。めっき装置１は、基板ホルダ３、第１のアノード電極８、第２のアノード電極９、めっき浴槽５および電源７を備える。基板ホルダ３は電源７の負極に接続され、被めっき基板２の第１の主面および第２の主面に、電源７から電子が供給される。めっき浴槽５はめっき液６で満たされており、被めっき基板２を保持した基板ホルダ３、第１のアノード電極８および第２のアノード電極９が浸漬されている。めっき浴槽５内において、第１のアノード電極８、第２のアノード電極９、基板ホルダ３が配置されており、本実施形態においては、第１のアノード電極８は、基板ホルダ３に保持された被めっき基板２の第１の主面に対峙するように配置され、第２のアノード電極９は、被めっき基板２の第２の主面に対峙するように配置されている。電源７は、第１のアノード電極８と被めっき基板２との間、および第２のアノード電極９と前記被めっき基板２との間に、個別に電圧を印加可能である。図４に示す例では、電源７の正極と第１のアノード電極８および第２のアノード電極９との間に切り替えスイッチが設けられている。電源７から、カソードとしての被めっき基板２とアノードとの間に電圧を印加することにより、被めっき基板の第１の主面および第２の主面にめっき金属電極が形成される。   FIG. 4 is a schematic configuration diagram of a plating apparatus used for forming a plated metal electrode. The plating apparatus 1 includes a substrate holder 3, a first anode electrode 8, a second anode electrode 9, a plating bath 5, and a power source 7. The substrate holder 3 is connected to the negative electrode of the power source 7, and electrons are supplied from the power source 7 to the first main surface and the second main surface of the substrate 2 to be plated. The plating bath 5 is filled with a plating solution 6, and the substrate holder 3 holding the substrate to be plated 2, the first anode electrode 8 and the second anode electrode 9 are immersed therein. In the plating bath 5, a first anode electrode 8, a second anode electrode 9, and a substrate holder 3 are disposed. In the present embodiment, the first anode electrode 8 is held by the substrate holder 3. The second anode electrode 9 is disposed so as to face the first main surface of the substrate 2 to be plated, and the second anode electrode 9 is disposed so as to face the second main surface of the substrate 2 to be plated. The power source 7 can individually apply a voltage between the first anode electrode 8 and the substrate 2 to be plated and between the second anode electrode 9 and the substrate 2 to be plated. In the example shown in FIG. 4, a changeover switch is provided between the positive electrode of the power source 7 and the first anode electrode 8 and the second anode electrode 9. By applying a voltage from the power source 7 between the substrate 2 to be plated as a cathode and the anode, plated metal electrodes are formed on the first main surface and the second main surface of the substrate to be plated.

まず、被めっき基板の構成について説明する。図３に示す被めっき基板２は、光電変換部４０の第１の主面の表面に第１の絶縁層９１を有し、第２の主面の表面に第２の絶縁層９２を有する。第１の主面および第２の主面の被めっき領域では、第１の下地導電層７１，第２の下地導電層７２が第１の絶縁層９１，第２の絶縁層９２の開口から露出している。第１のめっき工程では、第１の主面の被めっき領域に第１のめっき金属電極８１が形成され、第２のめっき工程では、第２の主面の被めっき領域に第２のめっき金属電極８２が形成される。   First, the configuration of the substrate to be plated will be described. The to-be-plated substrate 2 shown in FIG. 3 has a first insulating layer 91 on the surface of the first main surface of the photoelectric conversion unit 40 and a second insulating layer 92 on the surface of the second main surface. In the areas to be plated on the first main surface and the second main surface, the first base conductive layer 71 and the second base conductive layer 72 are exposed from the openings of the first insulating layer 91 and the second insulating layer 92. is doing. In the first plating step, the first plated metal electrode 81 is formed in the plated area of the first main surface, and in the second plating step, the second plated metal is formed in the plated area of the second main surface. An electrode 82 is formed.

光電変換部はｐｎ接合またはｐｉｎ接合を有する。ヘテロ接合太陽電池の光電変換部４０は、シリコン基板４５およびｎ型半導体層４１，ｐ型半導体層４２の間で形成されたｐｎ接合を有する。シリコン基板４５としては、ｎ型結晶シリコン基板とｐ型結晶シリコン基板のいずれを用いてもよい。シリコン基板内のキャリア寿命の長さから、ｎ型単結晶シリコン基板を用いることが好ましい。光閉じ込めにより入射光の利用効率を高める観点から、シリコン基板の表面には凹凸構造が設けられていることが好ましい。   The photoelectric conversion unit has a pn junction or a pin junction. The photoelectric conversion unit 40 of the heterojunction solar cell has a pn junction formed between the silicon substrate 45, the n-type semiconductor layer 41, and the p-type semiconductor layer 42. As the silicon substrate 45, either an n-type crystalline silicon substrate or a p-type crystalline silicon substrate may be used. In view of the long carrier life in the silicon substrate, it is preferable to use an n-type single crystal silicon substrate. From the viewpoint of increasing the utilization efficiency of incident light by light confinement, it is preferable that an uneven structure is provided on the surface of the silicon substrate.

シリコン基板４５の第１の主面には、ｎ型半導体層４１が設けられ、第２の主面にはｐ型半導体層４２が設けられる。これらのｎ型半導体層４１、ｐ型半導体層４２の膜厚は、２〜２０ｎｍ程度である。ヘテロ接合太陽電池では、受光面側のへテロ接合が逆接合の場合に光キャリアの分離回収効率が高められる傾向がある。そのため、シリコン基板４５としてｎ型結晶シリコン基板を用いる場合は、ｐ型半導体層４２が設けられている第２の主面を受光面とすることが好ましい。   An n-type semiconductor layer 41 is provided on the first main surface of the silicon substrate 45, and a p-type semiconductor layer 42 is provided on the second main surface. The film thicknesses of these n-type semiconductor layer 41 and p-type semiconductor layer 42 are about 2 to 20 nm. In the heterojunction solar cell, when the heterojunction on the light receiving surface side is a reverse junction, the separation and recovery efficiency of the optical carrier tends to be increased. Therefore, when an n-type crystalline silicon substrate is used as the silicon substrate 45, it is preferable that the second main surface provided with the p-type semiconductor layer 42 be a light receiving surface.

ヘテロ接合太陽電池では、シリコン基板４５とｎ型半導体層４１，ｐ型半導体層４２との間に、第１の真性半導体層４３，第２の真性半導体層４４が設けられていることが好ましい。シリコン基板４５の表面に第１の真性半導体層４３，第２の真性半導体層４４が設けられることにより、シリコン基板４５の表面欠陥が終端され、太陽電池の出力が向上する。これらの半導体層は、例えばプラズマＣＶＤ法により製膜される。   In the heterojunction solar cell, it is preferable that the first intrinsic semiconductor layer 43 and the second intrinsic semiconductor layer 44 are provided between the silicon substrate 45 and the n-type semiconductor layer 41 and the p-type semiconductor layer 42. By providing the first intrinsic semiconductor layer 43 and the second intrinsic semiconductor layer 44 on the surface of the silicon substrate 45, surface defects of the silicon substrate 45 are terminated, and the output of the solar cell is improved. These semiconductor layers are formed by, for example, a plasma CVD method.

ヘテロ接合太陽電池は、ｎ型半導体層４１上に、第１の透明導電層５１を備え、ｐ型半導体層４２上に第２の透明導電層５２を備える。第１の透明導電層５１，第２の透明導電層５２の材料としては、酸化インジウム錫（ＩＴＯ）等の導電性金属酸化物が用いられる。透明導電層の膜厚は、２０〜１２０ｎｍ程度である。金属酸化物からなる透明導電層は、例えばＭＯＣＶＤ法やスパッタ法により製膜される。   The heterojunction solar cell includes a first transparent conductive layer 51 on an n-type semiconductor layer 41 and a second transparent conductive layer 52 on a p-type semiconductor layer. As a material for the first transparent conductive layer 51 and the second transparent conductive layer 52, a conductive metal oxide such as indium tin oxide (ITO) is used. The film thickness of the transparent conductive layer is about 20 to 120 nm. The transparent conductive layer made of a metal oxide is formed by, for example, the MOCVD method or the sputtering method.

本実施形態において、被めっき基板２は、光電変換部の第１の主面の第１の下地導電層７１として、第１の透明導電層５１上に第１の金属シード６１を備え、光電変換部の第２の主面の第２の下地導電層７２として第２の透明導電層５２上に第２の金属シード６２を備える。第１の金属シード６１，第２の金属シード６２は、第１の透明導電層５１，第２の透明導電層５２よりも高い導電率を有する金属材料からなる。第１の下地導電層７１，第２の下地導電層７２が、光電変換部側から第１の透明導電層５１、第２の透明導電層５２と、第１の金属シード６１，第２の金属シード６２を有することにより、第１の金属シード６１，第２の金属シード６２が、第１のめっき金属電極８１，第２のめっき金属電極８２を形成する際の下地層として機能し、電解めっきの効率を向上できる。第１の金属シード６１，第２の金属シード６２の材料としては、銅、銀、ニッケル、スズ、アルミニウムおよびこれらの合金等を使用できる。   In this embodiment, the to-be-plated substrate 2 includes the first metal seed 61 on the first transparent conductive layer 51 as the first base conductive layer 71 on the first main surface of the photoelectric conversion unit, and photoelectric conversion A second metal seed 62 is provided on the second transparent conductive layer 52 as the second base conductive layer 72 on the second main surface of the part. The first metal seed 61 and the second metal seed 62 are made of a metal material having a higher conductivity than the first transparent conductive layer 51 and the second transparent conductive layer 52. The first base conductive layer 71 and the second base conductive layer 72 are composed of the first transparent conductive layer 51, the second transparent conductive layer 52, the first metal seed 61, and the second metal from the photoelectric conversion unit side. By having the seed 62, the first metal seed 61 and the second metal seed 62 function as a base layer when forming the first plating metal electrode 81 and the second plating metal electrode 82, and electrolytic plating. Can improve the efficiency. As materials for the first metal seed 61 and the second metal seed 62, copper, silver, nickel, tin, aluminum, alloys thereof, and the like can be used.

第１の金属シード６１，第２の金属シード６２は、例えば、インクジェット法、スクリーン印刷法等の印刷法や、真空蒸着法、スパッタ法等のドライプロセス、および無電解めっき法等によって形成できる。材料の利用効率の観点から、第１の金属シード６１，第２の金属シード６２は印刷により形成することが好ましい。印刷により第１の金属シード６１，第２の金属シード６２が形成される場合、金属微粒子とバインダー樹脂材料と溶剤とを含む導電性ペーストを用いることが好ましい。バインダー樹脂としては、エポキシ系樹脂、フェノール系樹脂、アクリル系樹脂等の熱硬化性樹脂が好ましく用いられる。これらの樹脂は固体状の樹脂でもよく、液状樹脂でもよい。   The first metal seed 61 and the second metal seed 62 can be formed by, for example, a printing method such as an inkjet method or a screen printing method, a dry process such as a vacuum deposition method or a sputtering method, an electroless plating method, or the like. From the viewpoint of material utilization efficiency, the first metal seed 61 and the second metal seed 62 are preferably formed by printing. When the first metal seed 61 and the second metal seed 62 are formed by printing, it is preferable to use a conductive paste containing metal fine particles, a binder resin material, and a solvent. As the binder resin, a thermosetting resin such as an epoxy resin, a phenol resin, or an acrylic resin is preferably used. These resins may be solid resins or liquid resins.

印刷により第１の金属シード６１，第２の金属シード６２が形成される場合、第１の金属電極１１０，第２の金属電極１２０のパターン形状に対応するように、第１の金属シード６１，第２の金属シード６２が形成される。例えば、図２に示すようなグリッド状の金属電極を形成する場合は、グリッド状の第１の金属シード６１，第２の金属シード６２が形成される。   When the first metal seed 61 and the second metal seed 62 are formed by printing, the first metal seed 61, the first metal seed 61, and the second metal electrode 120 correspond to the pattern shapes of the first metal electrode 110 and the second metal electrode 120. A second metal seed 62 is formed. For example, when the grid-shaped metal electrode as shown in FIG. 2 is formed, the grid-shaped first metal seed 61 and the second metal seed 62 are formed.

被めっき基板２は、第１の主面および第２の主面のそれぞれの表面に第１の絶縁層９１，第２の絶縁層９２を備える。第１の絶縁層９１，第２の絶縁層９２は、電解めっきにより第１のめっき金属電極８１，第２のめっき金属電極８２を形成する際に光電変換部の表面をめっき液から保護する保護層として機能する。   The substrate 2 to be plated includes a first insulating layer 91 and a second insulating layer 92 on the respective surfaces of the first main surface and the second main surface. The first insulating layer 91 and the second insulating layer 92 are provided to protect the surface of the photoelectric conversion portion from the plating solution when the first plated metal electrode 81 and the second plated metal electrode 82 are formed by electrolytic plating. Acts as a layer.

第１の絶縁層９１，第２の絶縁層９２には、めっき金属層の形成時に用いられるめっき液に対する化学的安定性を有する材料が用いられる。開口の形成が容易であること、および保護性能に優れることから、各種のフォトレジスト材料や無機材料が好ましい。フォトレジストはポジ型でもネガ型でもよい。ポジ型のフォトレジスト材料としては、ノボラック樹脂、フェノール樹脂等、ネガ型のフォトレジスト材料としては、アクリル樹脂等が用いられる。絶縁性の無機材料としては、酸化シリコン、酸化マグネシウム、酸化銅、酸化ニオブ等が挙げられる。   For the first insulating layer 91 and the second insulating layer 92, a material having chemical stability against a plating solution used at the time of forming the plating metal layer is used. Various photoresist materials and inorganic materials are preferable because the formation of the opening is easy and the protective performance is excellent. The photoresist may be positive or negative. As the positive photoresist material, a novolac resin, a phenol resin, or the like is used. As the negative photoresist material, an acrylic resin or the like is used. Examples of the insulating inorganic material include silicon oxide, magnesium oxide, copper oxide, and niobium oxide.

第１の絶縁層９１，第２の絶縁層９２は、第１の金属シード６１，第２の金属シード６２の形成領域に開口を有する。例えば、印刷法やマスクを用いた製膜により、第１の金属シード６１，第２の金属シード６２のパターンに対応するように絶縁層を形成することにより、金属シード形成領域の絶縁層に開口が設けられる。また、ＷＯ２０１３／０７７０３８号に記載されているように、印刷により金属シードを形成し、その上にＣＶＤにより酸化シリコン等の無機絶縁層を形成し、ＣＶＤ製膜時、あるいはＣＶＤ製膜後の加熱により、金属シードの表面形状を変化させ、金属シード上の絶縁層にき裂状の開口を形成してもよい。いずれの方法においても、第１の金属シード６１，第２の金属シード６２は、一部または全部が、第１の絶縁層９１，第２の絶縁層９２から露出している。   The first insulating layer 91 and the second insulating layer 92 have openings in regions where the first metal seed 61 and the second metal seed 62 are formed. For example, an insulating layer is formed so as to correspond to the pattern of the first metal seed 61 and the second metal seed 62 by film formation using a printing method or a mask, thereby opening the insulating layer in the metal seed formation region. Is provided. Also, as described in WO2013 / 077038, a metal seed is formed by printing, and an inorganic insulating layer such as silicon oxide is formed thereon by CVD, and heating during CVD film formation or after CVD film formation. By changing the surface shape of the metal seed, a crack-shaped opening may be formed in the insulating layer on the metal seed. In either method, the first metal seed 61 and the second metal seed 62 are partially or entirely exposed from the first insulating layer 91 and the second insulating layer 92.

上記の様に、被めっき基板２は、光電変換部４０の第１の主面および第２の主面に、パターン状の開口が設けられた第１の絶縁層９１，第２の絶縁層９２を備え、第１の主面の表面には第１の絶縁層９１から露出した第１の下地導電層７１（第１の金属シード６１）が設けられ、第２の主面の表面には第２の絶縁層９２から露出した第２の下地導電層７２（第２の金属シード６２）が設けられている。この被めっき基板２を、めっき装置１の基板ホルダ３に保持して電解めっきを行う。   As described above, the substrate to be plated 2 includes the first insulating layer 91 and the second insulating layer 92 in which patterned openings are provided on the first main surface and the second main surface of the photoelectric conversion unit 40. The first base conductive layer 71 (first metal seed 61) exposed from the first insulating layer 91 is provided on the surface of the first main surface, and the first main surface is provided with the first main surface. A second base conductive layer 72 (second metal seed 62) exposed from the second insulating layer 92 is provided. Electroplating is performed by holding the substrate 2 to be plated on the substrate holder 3 of the plating apparatus 1.

基板ホルダ３は、めっき浴槽内で被めっき基板を保持するとともに、被めっき基板２の下地導電層に電源７から電圧を印加する。絶縁層から露出した第１の下地導電層７１，第２の下地導電層７２がめっき液に晒された状態で電圧を印加することにより、開口形成領域に選択的にめっき金属が析出し、パターン状の第１のめっき金属電極８１，第２のめっき金属電極８２が形成される。   The substrate holder 3 holds the substrate to be plated in the plating bath and applies a voltage from the power source 7 to the underlying conductive layer of the substrate 2 to be plated. By applying a voltage in a state where the first base conductive layer 71 and the second base conductive layer 72 exposed from the insulating layer are exposed to the plating solution, the plating metal is selectively deposited in the opening forming region, and the pattern A first plated metal electrode 81 and a second plated metal electrode 82 are formed.

電解めっきにより析出させる金属としては、スズ，銅，銀，ニッケル等が挙げられる。中でも、低コストで低抵抗化が可能であることから、銅が好ましい。第１のめっき金属電極８１，第２のめっき金属電極８２は、複数の層から構成させてもよい。例えば、銅等の導電率の高いめっき金属層を形成後に、スズ等の化学的安定性に優れるめっき金属層を形成することにより、酸化等によるめっき層の劣化を抑制できる。   Examples of the metal deposited by electrolytic plating include tin, copper, silver, and nickel. Among these, copper is preferable because it can reduce resistance at low cost. The first plated metal electrode 81 and the second plated metal electrode 82 may be composed of a plurality of layers. For example, by forming a plated metal layer having excellent chemical stability such as tin after forming a plated metal layer having high conductivity such as copper, deterioration of the plated layer due to oxidation or the like can be suppressed.

第１のめっき金属電極８１，第２のめっき金属電極８２の形成は、めっき浴槽５内のめっき液６に、基板ホルダ３に保持された被めっき基板２および第１のアノード電極８，第２のアノード電極９を浸漬した状態で、端子部３５と電気的に接続されたカソードとしての被めっき基板２と、第１のアノード電極８，第２のアノード電極９との間に、電源７から電圧を印加することにより行われる。めっき液６の組成は、析出させる金属の種類に応じて適宜選択すればよい。例えば、銅めっきに用いられるめっき液は銅イオンを含む。酸性銅めっきでは、硫酸銅および硫酸を含む水溶液が用いられる。   The first plated metal electrode 81 and the second plated metal electrode 82 are formed by plating the plating solution 6 in the plating bath 5 with the substrate 2 to be plated and the first anode electrode 8 and the second electrode held by the substrate holder 3. From the power source 7 between the substrate 2 to be plated as a cathode electrically connected to the terminal portion 35 and the first anode electrode 8 and the second anode electrode 9 with the anode electrode 9 immersed therein. This is done by applying a voltage. What is necessary is just to select the composition of the plating solution 6 suitably according to the kind of metal to deposit. For example, a plating solution used for copper plating contains copper ions. In acidic copper plating, an aqueous solution containing copper sulfate and sulfuric acid is used.

次に図４、８、９、１０を用いて、本実施形態における基板ホルダ３の構成について説明する。図４は一実施形態のめっき装置１の構成概念図である。図８は一実施形態の第１の支持部材３１の模式的な平面図であり、第１の支持部材３１における第２の支持部材３２と対向する側の面を示す。図９は一実施形態の第２の支持部材３２の模式的な平面図であり、第２の支持部材３２における第１の支持部材３１と対向する側の面を示す。図１０は一実施形態の基板ホルダ３と、基板ホルダ３に保持された状態の被めっき基板２を示す模式的な平面図である。   Next, the configuration of the substrate holder 3 in the present embodiment will be described with reference to FIGS. FIG. 4 is a conceptual diagram of the configuration of the plating apparatus 1 according to an embodiment. FIG. 8 is a schematic plan view of the first support member 31 according to an embodiment, and shows a surface of the first support member 31 that faces the second support member 32. FIG. 9 is a schematic plan view of the second support member 32 of the embodiment, and shows a surface of the second support member 32 on the side facing the first support member 31. FIG. 10 is a schematic plan view showing the substrate holder 3 according to one embodiment and the substrate 2 to be plated held by the substrate holder 3.

図４に示すように、基板ホルダ３は、電源７の負極に接続された端子部３５と、端子部３５に接続された第１の支持部材３１と、第１の支持部材３１と嵌合されることで被めっき基板２を保持する第２の支持部材３２と、を含む。   As shown in FIG. 4, the substrate holder 3 is fitted with the terminal portion 35 connected to the negative electrode of the power source 7, the first support member 31 connected to the terminal portion 35, and the first support member 31. And a second support member 32 that holds the substrate 2 to be plated.

図４、８に示すように、第１の支持部材３１は、第１の本体３１ａと、第１の本体３１ａに取り付けられ、端子部３５に電気的に接続された第１の給電部３１ｃと、第１の本体３１ａに取り付けられ、端子部３５に電気的に接続された第１の嵌合部３１ｂと、を含む。本実施形態において、第１の嵌合部３１ｂ、及び第１の給電部３１ｃは、第１の本体３１ａにおける、第２の支持部材３２と対向する側の面に設けられている。   As shown in FIGS. 4 and 8, the first support member 31 includes a first main body 31 a, a first power supply portion 31 c that is attached to the first main body 31 a and is electrically connected to the terminal portion 35. And a first fitting part 31b attached to the first main body 31a and electrically connected to the terminal part 35. In this embodiment, the 1st fitting part 31b and the 1st electric power feeding part 31c are provided in the surface by the side which opposes the 2nd supporting member 32 in the 1st main body 31a.

本実施形態においては、第１の本体３１ａが、端子部３５と、第１の給電部３１ｃ、第１の嵌合部３１ｂと、を接続する第１の金属部と、前記金属部の表面を覆う第１の絶縁部とを有する構成としている。第１の本体３１ａは、例えばステンレス製の金属バーで第１の金属部を形成し、この金属バーの表面を絶縁樹脂等の第１の絶縁部で覆う構成としてもよい。あるいは、図４に示すように、第１の本体３１ａが、第１の金属部としての第１の配線３１ｄと、この第１の配線３１ｄが内在する第１の絶縁部と、を含む構成としてもよい。このような構成とすることにより、端子部３５から印加された電圧を、第１の給電部３１ｃを介して被めっき基板に加えることが可能な構成を実現するとともに、第１の本体３１ａの表面へのめっき金属の析出を抑制する構成を実現することができる。   In the present embodiment, the first main body 31a includes a first metal portion that connects the terminal portion 35, the first power feeding portion 31c, and the first fitting portion 31b, and the surface of the metal portion. The first insulating portion is covered. The first main body 31a may be configured such that a first metal part is formed of, for example, a stainless steel metal bar, and the surface of the metal bar is covered with a first insulating part such as an insulating resin. Alternatively, as shown in FIG. 4, the first main body 31 a includes a first wiring 31 d as a first metal part and a first insulating part in which the first wiring 31 d is present. Also good. By adopting such a configuration, it is possible to realize a configuration in which the voltage applied from the terminal portion 35 can be applied to the substrate to be plated via the first power feeding portion 31c, and the surface of the first main body 31a. The structure which suppresses precipitation of the plating metal to can be implement | achieved.

図４、９に示すように、第２の支持部材３２は、第２の本体３２ａと、第２の本体３２ａに取り付けられ、第１の嵌合部３１ｂと嵌合されることで、端子部３５と電気的に接続される第２の嵌合部３２ｂと、第２の本体３２ａに取り付けられ、第２の嵌合部３２ｂと電気的に接続された第２の給電部３２ｃと、を含む。本実施形態において、第２の嵌合部３２ｂ、及び第２の給電部３２ｃは、第２の本体３２ａにおける、第１の支持部材３１と対向する側の面に設けられている。また、第２の嵌合部３２ｂは、第１の嵌合部３１ｂと対向する位置に配置され、第２の給電部３２ｃは、第１の給電部３１ｃと対向する位置に配置されている。   As shown in FIGS. 4 and 9, the second support member 32 is attached to the second main body 32a and the second main body 32a, and is fitted to the first fitting portion 31b, whereby the terminal portion. A second fitting portion 32b electrically connected to the second main body 32a, and a second power feeding portion 32c attached to the second main body 32a and electrically connected to the second fitting portion 32b. . In this embodiment, the 2nd fitting part 32b and the 2nd electric power feeding part 32c are provided in the surface at the side facing the 1st supporting member 31 in the 2nd main body 32a. The second fitting portion 32b is disposed at a position facing the first fitting portion 31b, and the second power feeding portion 32c is disposed at a position facing the first power feeding portion 31c.

本実施形態においては、第２の本体３２ａが、第２の嵌合部３２ｂと、第２の給電部３２ｃと、を接続する第２の金属部と、第２の金属部の表面を覆う第２の絶縁部とを有する構成としている。例えば、第２の本体３２ａは、例えばステンレス製の金属バーで第２の金属部を形成し、この金属バーの表面を絶縁樹脂等の第２の絶縁部で覆う構成としてもよい。あるいは、図４に示すように、第２の本体３２ａが、第２の金属部としての第２の配線３２ｄと、この第２の配線３２ｄが内在する第２の絶縁部と、を含む構成としてもよい。このような構成とすることにより、第１の嵌合部３１ｂを介して、端子部３５から印加された電圧を、第２の給電部３２ｃを介して被めっき基板に加えることが可能な構成を実現するとともに、第２の本体３２ａの表面へのめっき金属の析出を抑制する構成を実現することができる。   In the present embodiment, the second main body 32a covers the surface of the second metal part and the second metal part that connects the second fitting part 32b and the second power feeding part 32c. It has the structure which has 2 insulation parts. For example, the 2nd main body 32a is good also as a structure which forms a 2nd metal part with a metal bar made from stainless steel, for example, and covers the surface of this metal bar with 2nd insulation parts, such as insulating resin. Alternatively, as shown in FIG. 4, the second main body 32a includes a second wiring 32d as a second metal part and a second insulating part in which the second wiring 32d is contained. Also good. By adopting such a configuration, it is possible to apply a voltage applied from the terminal portion 35 via the first fitting portion 31b to the substrate to be plated via the second power feeding portion 32c. While realizing, the structure which suppresses precipitation of the plating metal to the surface of the 2nd main body 32a is realizable.

図７は、図４に示すVII部を拡大した模式的な側面図である。図７に示すように、第１の嵌合部３１ｂと第１の本体３１ａとの間、第２の嵌合部３２ｂと第２の本体３２ａとの間、の内の少なくとも一方には、弾性体３６が介在する。   FIG. 7 is a schematic side view in which the VII portion shown in FIG. 4 is enlarged. As shown in FIG. 7, at least one of the first fitting portion 31b and the first main body 31a and between the second fitting portion 32b and the second main body 32a is elastic. A body 36 is interposed.

このような構成とすることにより、弾性体３６の弾性変形により、弾性体３６に取り付けられた第１の嵌合部３１ｂが、上下左右の位置、又はその傾きを変えながら、第２の嵌合部３２ｂに嵌合可能な位置に移動する。そのため、第１の支持部材３１、第２の支持部材３２の寸法精度がずれ、その相対的な位置がずれたとしても、第１の嵌合部３１ｂと第２の嵌合部３２ｂとについて、所期の嵌合を実現することが可能となる。その結果として、第１の嵌合部３１ｂと第２の嵌合部３２ｂとの電気的接続が担保され、第１のめっき金属電極８１の膜厚と、第２のめっき金属電極８２の膜厚と、を均一に形成することができる。また、第１の嵌合部３１ｂ、第２の嵌合部３２ｂが破損する可能性を低減することができる。   By adopting such a configuration, the first fitting portion 31b attached to the elastic body 36 can be changed into the second fitting while changing the vertical and horizontal positions or the inclination thereof by the elastic deformation of the elastic body 36. It moves to a position where it can be fitted to the part 32b. Therefore, even if the dimensional accuracy of the first support member 31 and the second support member 32 is shifted and the relative positions thereof are shifted, the first fitting portion 31b and the second fitting portion 32b are It is possible to achieve the desired fitting. As a result, the electrical connection between the first fitting portion 31b and the second fitting portion 32b is ensured, and the film thickness of the first plated metal electrode 81 and the film thickness of the second plated metal electrode 82 are secured. Can be formed uniformly. Moreover, possibility that the 1st fitting part 31b and the 2nd fitting part 32b will be damaged can be reduced.

本実施形態においては、第１の嵌合部３１ｂと第１の本体３１ａとの間に、ばね等の弾性体３６が介在する構成としている。更に、第１の本体３１ａにおける第１の金属部に電気的に接続された配線３７を設けており、この配線３７を介して、第１の嵌合部３１ｂが端子部３５と電気的に接続される構成としている。   In the present embodiment, an elastic body 36 such as a spring is interposed between the first fitting portion 31b and the first main body 31a. Further, a wiring 37 electrically connected to the first metal portion in the first main body 31 a is provided, and the first fitting portion 31 b is electrically connected to the terminal portion 35 through the wiring 37. It is assumed to be configured.

本実施形態においては、第１の嵌合部３１ｂがプラグ部となっており、第２の嵌合部３２ｂに向けて突出する構成となっている。第２の嵌合部３２ｂは、プラグ部である第１の嵌合部３１ｂが挿入されるソケット部となっている。   In the present embodiment, the first fitting portion 31b is a plug portion and protrudes toward the second fitting portion 32b. The 2nd fitting part 32b is a socket part in which the 1st fitting part 31b which is a plug part is inserted.

また、図７に示すように、ソケット部は、狭隘部３２ｅと、狭隘部３２ｅから先端に向かって広がるテーパ部３２ｆと、を有している。テーパ部３２ｆは、プラグ部のソケット部内への嵌入を案内する役割を有する。即ち、ソケット部が先端にテーパ部３２ｆを有することにより、プラグ部の先端がこのテーパ部３２ｆに当たることにより、弾性体３６が弾性変形し、プラグ部を、ソケット部内に嵌入することが可能な位置に移動させることが可能となる。   Moreover, as shown in FIG. 7, the socket part has the narrow part 32e and the taper part 32f which spreads toward the front-end | tip from the narrow part 32e. The tapered portion 32f has a role of guiding insertion of the plug portion into the socket portion. That is, since the socket portion has the tapered portion 32f at the tip, the tip of the plug portion comes into contact with the tapered portion 32f, so that the elastic body 36 is elastically deformed and the plug portion can be inserted into the socket portion. It is possible to move to.

なお、第１の嵌合部３１ｂと第２の嵌合部３２ｂの構成は上述したものに限定されず、また第１の嵌合部３１ｂがソケット部であり、第２の嵌合部３２ｂがプラグ部である構成としてもよい。第１の嵌合部３１ｂがソケット部であり、第２の嵌合部３２ｂがプラグ部である場合においては、弾性体３６が弾性変形し、弾性体３６を介して取り付けられたソケット部を、プラグ部に嵌入されることが可能な位置に移動させることが可能となる。   In addition, the structure of the 1st fitting part 31b and the 2nd fitting part 32b is not limited to what was mentioned above, Moreover, the 1st fitting part 31b is a socket part, and the 2nd fitting part 32b is It is good also as a structure which is a plug part. When the first fitting part 31b is a socket part and the second fitting part 32b is a plug part, the elastic body 36 is elastically deformed, and the socket part attached via the elastic body 36 is It can be moved to a position where it can be inserted into the plug part.

なお、本実施形態においては、第１の嵌合部３１ｂ側に弾性体３６を設ける構成を例示したが、第２の嵌合部３２ｂ側に弾性体３６を設ける構成としてもよい。また、第１の嵌合部３１ｂ側、及び第２の嵌合部３２ｂ側の双方に弾性体３６を設ける構成としてもよい。   In addition, in this embodiment, although the structure which provides the elastic body 36 in the 1st fitting part 31b side was illustrated, it is good also as a structure which provides the elastic body 36 in the 2nd fitting part 32b side. Moreover, it is good also as a structure which provides the elastic body 36 in both the 1st fitting part 31b side and the 2nd fitting part 32b side.

更に、本実施形態においては、ソケット部が狭隘部３２ｅを有し、プラグ部の表面が、ソケット部の狭隘部の内表面と擦れながら、ソケット部内に挿入される構成としている。このような構成とすることにより、第１の嵌合部３１ｂと第２の嵌合部３２ｂとの間の接触抵抗を低く保つことができる。即ち、電解めっき工程においては、めっき液の揮発成分によって、第１の嵌合部３１ｂ、第２の嵌合部３２ｂに酸化膜が形成される可能性がある。しかし、上述の構成とすることにより、プラグ部の表面が、ソケット部内に挿入される際に、ソケット部の狭隘部３２ｅの内表面側と擦れるため、双方の表面に形成された酸化膜が削られ、導電性の高い表面を露出させることが可能となる。その結果として、第１の嵌合部３１ｂと第２の嵌合部３２ｂとの間の接触抵抗を低く保つことができる。   Further, in the present embodiment, the socket portion has a narrow portion 32e, and the surface of the plug portion is inserted into the socket portion while rubbing against the inner surface of the narrow portion of the socket portion. By setting it as such a structure, the contact resistance between the 1st fitting part 31b and the 2nd fitting part 32b can be kept low. That is, in the electrolytic plating process, an oxide film may be formed on the first fitting portion 31b and the second fitting portion 32b due to the volatile component of the plating solution. However, with the above-described configuration, the surface of the plug portion rubs against the inner surface side of the narrow portion 32e of the socket portion when inserted into the socket portion, so that the oxide film formed on both surfaces is scraped. Therefore, it is possible to expose a highly conductive surface. As a result, the contact resistance between the first fitting portion 31b and the second fitting portion 32b can be kept low.

第２の支持部材３２が被めっき基板２を保持した状態で、第１の支持部材３１に設けられた第１の嵌合部３１ｂと、を第２の支持部材３２の第２の嵌合部３２ｂと、を嵌合させることにより、図４、１０に示すように、第１の支持部材３１と第２の支持部材３２とが接合状態となり、基板ホルダ３に被めっき基板２が固定される。基板ホルダ３が被めっき基板２を保持した状態では、第１の嵌合部３１ｂの先端に露出している導電接続部３１ｅが第２の支持部材３２内の第２の金属部（例えば第２の配線３２ｄ）と導通状態となっている。そのため、電源７から端子部３５を介して第１の支持部材３１に供給された電流は、第１の支持部材３１に設けられた第１の給電部３１ｃに供給されるとともに、導電接続部３１ｅを介して第２の支持部材３２に設けられた第２の給電部３２ｃにも供給される。   In a state where the second support member 32 holds the substrate to be plated 2, the first fitting portion 31 b provided on the first support member 31 is connected to the second fitting portion of the second support member 32. As shown in FIGS. 4 and 10, the first support member 31 and the second support member 32 are joined to each other, and the substrate 2 to be plated is fixed to the substrate holder 3. . In a state where the substrate holder 3 holds the substrate 2 to be plated, the conductive connection part 31e exposed at the tip of the first fitting part 31b is a second metal part (for example, a second metal part) in the second support member 32. The wiring 32d) is in a conductive state. Therefore, the current supplied from the power source 7 to the first support member 31 via the terminal portion 35 is supplied to the first power feeding portion 31c provided in the first support member 31, and the conductive connection portion 31e. To the second power supply portion 32c provided on the second support member 32.

第１の給電部３１ｃから、被めっき基板２の第１の主面の第１の下地導電層７１に電流（電子）が供給され、第２の給電部３２ｃから、被めっき基板２の第２の主面の第２の下地導電層７２に電流（電子）が供給される。基板ホルダ３の被めっき基板と当接する部分にばね等の弾性部材を設けておけば、基板ホルダ３が被めっき基板を保持した状態では、弾性部材が圧縮状態となり、弾性復元力により給電部が被めっき基板に近接する方向に付勢される。そのため、第１の給電部３１ｃ，第２の給電部３２ｃを被めっき基板の第１の下地導電層７１，第２の下地導電層７２に確実に当接させ、基板ホルダ３内での被めっき基板の保持姿勢を維持するとともに、被めっき基板に安定的に電流を供給できる。弾性部材を介して第１の給電部３１ｃ，第２の給電部３２ｃを支持部材に接合することにより、第１の給電部３１ｃ，第２の給電部３２ｃが被めっき基板に近接する方向に付勢されるように基板ホルダを構成してもよい。   Current (electrons) is supplied from the first power supply unit 31c to the first base conductive layer 71 on the first main surface of the substrate 2 to be plated, and the second power supply unit 32c supplies the second of the substrate 2 to be plated. Current (electrons) is supplied to the second base conductive layer 72 on the main surface of the substrate. If an elastic member such as a spring is provided in a portion of the substrate holder 3 that contacts the substrate to be plated, the elastic member is in a compressed state in a state where the substrate holder 3 holds the substrate to be plated, and the power supply portion is moved by the elastic restoring force. It is biased in the direction approaching the substrate to be plated. Therefore, the first power supply portion 31c and the second power supply portion 32c are securely brought into contact with the first base conductive layer 71 and the second base conductive layer 72 of the substrate to be plated, so that the plating is performed in the substrate holder 3. While maintaining the holding | maintenance attitude | position of a board | substrate, an electric current can be stably supplied to a to-be-plated board | substrate. By joining the first power supply part 31c and the second power supply part 32c to the support member via the elastic member, the first power supply part 31c and the second power supply part 32c are attached in a direction close to the substrate to be plated. The substrate holder may be configured to be biased.

めっき装置１は、めっき浴槽５と、このめっき浴槽５内に配置された第１のアノード電極８、第２のアノード電極９、及び基板ホルダ３を有する。本実施形態においては、めっき装置１が、被めっき基板２の第１の主面に対峙して配置される第１のアノード電極８と被めっき基板の第２の主面に対峙して配置される第２のアノード電極９を備えている。第１のアノード電極８は、主に、被めっき基板の第１の主面の第１の下地導電層７１上に第１のめっき金属電極８１を形成するために用いられる。第２のアノード電極９は、主に、被めっき基板の第２の主面の第２の下地導電層７２上に第２のめっき金属電極８２を形成するために用いられる。   The plating apparatus 1 includes a plating bath 5, a first anode electrode 8, a second anode electrode 9, and a substrate holder 3 disposed in the plating bath 5. In the present embodiment, the plating apparatus 1 is disposed so as to face the first anode electrode 8 disposed to face the first main surface of the substrate 2 to be plated and the second main surface of the substrate to be plated. The second anode electrode 9 is provided. The first anode electrode 8 is mainly used for forming the first plated metal electrode 81 on the first base conductive layer 71 on the first main surface of the substrate to be plated. The second anode electrode 9 is mainly used for forming the second plated metal electrode 82 on the second base conductive layer 72 on the second main surface of the substrate to be plated.

まず、図５Ａに示すように、電源７の正極を第１のアノード電極８と接続して、被めっき基板２と第１のアノード電極８との間に電圧を印加して電解めっきを実施する（第１のめっき工程）。被めっき基板と第２のアノード電極９との間には、電圧が印加されていないため、被めっき基板２の第２の主面への電子の供給よりも第１の主面への電子の供給が優先され、第１の主面の被めっき領域に第１のめっき金属電極８１が形成される。   First, as shown in FIG. 5A, the positive electrode of the power source 7 is connected to the first anode electrode 8, and a voltage is applied between the substrate to be plated 2 and the first anode electrode 8 to perform electrolytic plating. (First plating step). Since no voltage is applied between the substrate to be plated and the second anode electrode 9, electrons are supplied to the first main surface rather than being supplied to the second main surface of the substrate 2 to be plated. The supply is prioritized, and the first plated metal electrode 81 is formed in the area to be plated on the first main surface.

この際、第２の給電部３２ｃから供給される電子や、第１の主面側からシリコン基板４５を介して回り込んだ電子が、被めっき基板２の第２の主面に供給されるが、第２の主面への電子の供給量が過剰となることはない。そのため、第１の主面への電解めっき時に第２の主面に供給された電子は、相対的に抵抗の小さい被めっき領域への金属の析出により消費され、第２の主面への不所望の金属の析出が生じ難い。   At this time, electrons supplied from the second power supply unit 32 c and electrons that have wrapped around from the first main surface side through the silicon substrate 45 are supplied to the second main surface of the substrate to be plated 2. The supply amount of electrons to the second main surface does not become excessive. Therefore, the electrons supplied to the second main surface at the time of electrolytic plating on the first main surface are consumed by the deposition of metal on the plated region having a relatively low resistance, and the electrons on the second main surface are not deposited. Precipitation of the desired metal is difficult to occur.

第１のめっき工程において、電源７から第１のアノード電極８と被めっき基板２との間に印加する電圧は、パルス電圧でも非パルス電圧でもよい。めっき効率の観点からは非パルス電圧が好ましい。   In the first plating step, the voltage applied from the power source 7 between the first anode electrode 8 and the substrate 2 to be plated may be a pulse voltage or a non-pulse voltage. From the viewpoint of plating efficiency, a non-pulse voltage is preferable.

被めっき基板の第１の主面に第２のめっき金属電極８２を形成後、図５Ｂに示すように、電源７を第２のアノード電極９に接続して、被めっき基板２と第２のアノード電極９との間に電圧を印加して電解めっきを実施する（第２のめっき工程）。この際、電圧印加のオン・オフを繰り返して、パルスめっきを実施する。パルスの周期（電圧のオンオフの周期）は特に限定されないが、１０〜５００ｍｓ程度が好ましい。   After forming the second plated metal electrode 82 on the first main surface of the substrate to be plated, the power source 7 is connected to the second anode electrode 9 as shown in FIG. Electrolytic plating is carried out by applying a voltage between the anode electrode 9 (second plating step). At this time, pulse plating is performed by repeatedly turning on and off the voltage application. The pulse period (voltage on / off period) is not particularly limited, but is preferably about 10 to 500 ms.

このように、第１の主面へのめっきを実施した後、パルスめっきにより第２の主面へのめっきを実施することにより、被めっき基板の第１の主面に第１の金属電極１１０を形成し、第２の主面に第２の金属電極１２０を形成することができる。   Thus, after performing the plating on the first main surface, the first metal electrode 110 is formed on the first main surface of the substrate to be plated by performing the plating on the second main surface by pulse plating. And the second metal electrode 120 can be formed on the second main surface.

なお、第１のアノード電極８および第２のアノード電極９の両方を電源７に接続した状態で電解めっきを実施すると、被めっき基板の両面に同時にめっき金属が析出するため、めっき時間を短縮できる。   If electrolytic plating is performed with both the first anode electrode 8 and the second anode electrode 9 connected to the power source 7, the plating metal is simultaneously deposited on both surfaces of the substrate to be plated, so that the plating time can be shortened. .

なお、本実施形態においては、被めっき基板の両面に第１の金属電極１１０、第２の金属電極１２０を形成する方法を例示したが、被めっき基板のいずれか一方の主面に金属電極を形成する方法としてもよい。   In the present embodiment, the method of forming the first metal electrode 110 and the second metal electrode 120 on both surfaces of the substrate to be plated has been exemplified, but the metal electrode is provided on one main surface of the substrate to be plated. It is good also as the method of forming.

図４に示すめっき装置１は、１つの電源７から、スイッチの切り替えにより、第１のアノード電極８および第２のアノード電極９に個別に電圧を印加するように構成されているが、図６に示すように、第１のアノード電極６０８と被めっき基板２との間に電圧を印加するための電源６７１と、第２のアノード電極６０９と被めっき基板２との間に電圧を印加するための電源６７２とが個別に設けられていてもよい。   The plating apparatus 1 shown in FIG. 4 is configured to apply a voltage individually to the first anode electrode 8 and the second anode electrode 9 from one power source 7 by switching the switch. As shown in FIG. 2, a power source 671 for applying a voltage between the first anode electrode 608 and the substrate to be plated 2 and a voltage between the second anode electrode 609 and the substrate to be plated 2 are applied. The power source 672 may be provided separately.

基板ホルダ３は、複数の被めっき基板を保持可能に構成されていてもよい。また、複数の基板ホルダを１つの電源に並列接続することにより、複数の被めっき基板に、同時に金属めっき電極を形成してもよい。   The substrate holder 3 may be configured to be able to hold a plurality of substrates to be plated. Moreover, you may form a metal plating electrode simultaneously in a several to-be-plated board | substrate by connecting a some board | substrate holder in parallel with one power supply.

以上、図３に示すヘテロ接合太陽電池形成用被めっき基板２を用いる例を挙げて、めっき金属電極の形成方法について説明したが、被めっき基板の構成は図３に示すものに限定されない。例えば、導電性下地層は、透明電極層のみからなり、金属シードを含んでいなくてもよい。光電変換部上の全面に金属シードが設けられていてもよい。金属シードが全面に形成されていても、その上の絶縁層にパターン開口が設けられていれば、パターン状のめっき金属電極を形成できる。この形態では、パターン状のめっき金属電極を形成後に絶縁層を除去し、さらに、その下に露出した金属シードを除去することが好ましい。   As described above, the method for forming the plated metal electrode has been described with reference to the example using the substrate to be plated 2 for forming a heterojunction solar cell shown in FIG. For example, the conductive underlayer is composed of only a transparent electrode layer and does not have to contain a metal seed. A metal seed may be provided on the entire surface of the photoelectric conversion unit. Even if the metal seed is formed on the entire surface, a patterned plated metal electrode can be formed if a pattern opening is provided in the insulating layer thereon. In this embodiment, it is preferable to remove the insulating layer after forming the patterned plated metal electrode and further remove the metal seed exposed thereunder.

本発明は、ヘテロ接合太陽電池以外の太陽電池の電極形成にも適用できる。具体的には、ヘテロ接合型以外の結晶シリコン太陽電池や、ＧａＡｓ等のシリコン以外の半導体基板を用いた太陽電池、非晶質シリコン系薄膜や結晶質シリコン系薄膜のｐｉｎ接合あるいはｐｎ接合上に透明導電層が形成されたシリコン系薄膜太陽電池や、ＣＩＳ，ＣＩＧＳ等の化合物半導体太陽電池、色素増感太陽電池や有機薄膜（導電性ポリマー）等の有機薄膜太陽電池等が挙げられる。   The present invention can also be applied to the formation of electrodes for solar cells other than heterojunction solar cells. Specifically, a crystalline silicon solar cell other than a heterojunction type, a solar cell using a semiconductor substrate other than silicon such as GaAs, a pin junction or a pn junction of an amorphous silicon thin film or a crystalline silicon thin film Examples thereof include silicon-based thin film solar cells on which a transparent conductive layer is formed, compound semiconductor solar cells such as CIS and CIGS, organic thin film solar cells such as dye-sensitized solar cells and organic thin films (conductive polymers).

１ めっき装置
２ 被めっき基板
３ 基板ホルダ
５ めっき浴槽
６ めっき液
７ 電源
８ 第１のアノード電極
９ 第２のアノード電極
３１ 第１の支持部材
３１ａ 第１の本体
３１ｂ 第１の嵌合部
３１ｃ 第１の給電部
３１ｄ 第１の配線
３１ｅ 導電接続部
３２ 第２の支持部材
３２ａ 第２の本体
３２ｂ 第２の嵌合部
３２ｃ 第２の給電部
３２ｄ 第２の配線
３２ｅ 狭隘部
３２ｆ テーパ部
３５ 端子部
３６ 弾性体
３７ 配線
４０ 光電変換部
４５ シリコン基板
４１ ｎ型半導体層
４２ ｐ型半導体層
４３ 第１の真性半導体層
４４ 第２の真性半導体層
５１ 第１の透明導電層
５２ 第２の透明導電層
６１ 第１の金属シード
６２ 第２の金属シード
７１ 第１の下地導電層
７２ 第２の下地導電層
８１ 第１のめっき金属電極
８２ 第２のめっき金属電極
９１ 第１の絶縁層
９２ 第２の絶縁層
１１０ 第１の金属電極
１２０ 第２の金属電極
１１１ バスバー電極
１１２ フィンガー電極
２００ 太陽電池

DESCRIPTION OF SYMBOLS 1 Plating apparatus 2 Substrate to be plated 3 Substrate holder 5 Plating bath 6 Plating solution 7 Power supply 8 First anode electrode 9 Second anode electrode 31 First support member 31a First main body 31b First fitting portion 31c First 1 power supply portion 31d first wiring 31e conductive connection portion 32 second support member 32a second main body 32b second fitting portion 32c second power supply portion 32d second wiring 32e narrow portion 32f taper portion 35 terminal Part 36 elastic body 37 wiring 40 photoelectric conversion part 45 silicon substrate 41 n-type semiconductor layer 42 p-type semiconductor layer 43 first intrinsic semiconductor layer 44 second intrinsic semiconductor layer 51 first transparent conductive layer 52 second transparent conduction Layer 61 First metal seed 62 Second metal seed 71 First underlying conductive layer 72 Second underlying conductive layer 81 First plated metal electrode 82 Second plated gold Electrode 91 first insulating layer 92 second insulating layer 110 the first metal electrode 120 and the second metal electrode 111 bus bar electrode 112 finger electrode 200 solar cell

Claims (6)

端子部と、
前記端子部と電気的に接続された第１の支持部材と、
前記第１の支持部材と嵌合されることで被めっき基板を保持する第２の支持部材と、
を含む、基板ホルダであって、
前記第１の支持部材は、
第１の本体と、
前記第１の本体に取り付けられ、前記端子部に電気的に接続された第１の給電部と、
前記第１の本体に取り付けられ、前記端子部に電気的に接続された第１の嵌合部と、
を含み、
前記第２の支持部材は、
第２の本体と、
前記第２の本体に取り付けられ、前記第１の嵌合部と嵌合されることで前記端子部と電気的に接続される第２の嵌合部と、
前記第２の本体に取り付けられ、前記第２の嵌合部と電気的に接続された第２の給電部と、
を含み、
前記第１の嵌合部、前記第２の嵌合部の内のいずれか少なくとも一方が、弾性体を介して前記第１の本体又は前記第２の本体に取り付けられた、
基板ホルダ。 A terminal section;
A first support member electrically connected to the terminal portion;
A second support member that holds the substrate to be plated by being fitted to the first support member;
A substrate holder comprising:
The first support member is
A first body;
A first power supply unit attached to the first body and electrically connected to the terminal unit;
A first fitting portion attached to the first body and electrically connected to the terminal portion;
Including
The second support member is
A second body;
A second fitting portion attached to the second main body and electrically connected to the terminal portion by being fitted to the first fitting portion;
A second power feeding part attached to the second main body and electrically connected to the second fitting part;
Including
At least one of the first fitting portion and the second fitting portion is attached to the first main body or the second main body via an elastic body,
Substrate holder. 前記第１の嵌合部、前記第２の嵌合部の内のいずれか一方が、他方に向けて突出するプラグ部を有し、いずれか他方が、前記プラグ部が挿入されるソケット部を有し、
前記ソケット部が、狭隘部と、前記狭隘部から先端に向けて広がるテーパ部と、を有する、
請求項１に記載の基板ホルダ。 Either one of the first fitting portion and the second fitting portion has a plug portion protruding toward the other, and the other has a socket portion into which the plug portion is inserted. Have
The socket part has a narrow part and a tapered part that spreads from the narrow part toward the tip.
The substrate holder according to claim 1. 前記第１の嵌合部、前記第２の嵌合部の内のいずれか一方が、他方に向けて突出するプラグ部を有し、いずれか他方が、前記プラグ部が挿入されるソケット部を有し、
前記ソケット部が狭隘部を有し、
前記プラグ部の表面が、前記ソケット部の前記狭隘部の内表面と擦れながら、前記ソケット部内に挿入される、
請求項１又は２に記載の基板ホルダ。 Either one of the first fitting portion and the second fitting portion has a plug portion protruding toward the other, and the other has a socket portion into which the plug portion is inserted. Have
The socket part has a narrow part;
The surface of the plug part is inserted into the socket part while rubbing against the inner surface of the narrow part of the socket part.
The substrate holder according to claim 1 or 2. 前記第１の給電部と前記第１の本体との間、前記第２の給電部と前記第２の本体との間、の内の少なくとも一方には、弾性体が介在する、
請求項１乃至３のいずれか一つに記載の基板ホルダ。 An elastic body is interposed between at least one of the first power feeding unit and the first main body and between the second power feeding unit and the second main body,
The substrate holder according to any one of claims 1 to 3. 前記第１の本体は、
前記端子部、前記第１の給電部、及び前記第１の嵌合部を電気的に接続する第１の金属部と、
前記第１の金属部の表面を覆う第１の絶縁部と、
を含み、
前記第２の本体は、
前記第２の嵌合部と、前記第２の給電部と、を電気的に接続する第２の金属部と、
前記第２の金属部の表面を覆う第２の絶縁部と、
を含む、
請求項１乃至４のいずれか一つに記載の基板ホルダ。 The first body includes
A first metal part for electrically connecting the terminal part, the first power feeding part, and the first fitting part;
A first insulating portion covering the surface of the first metal portion;
Including
The second body is
A second metal part for electrically connecting the second fitting part and the second power feeding part;
A second insulating portion covering the surface of the second metal portion;
including,
The substrate holder as described in any one of Claims 1 thru | or 4. めっき浴槽と、
前記めっき浴槽内に配置された請求項１乃至５のいずれか一つに記載の基板ホルダと、 前記めっき浴槽内に配置されたアノード電極と、
前記端子部と前記アノード電極との間に電圧を印加する電源と、
を含む、
電極形成用めっき装置。

Plating bath,
The substrate holder according to any one of claims 1 to 5 disposed in the plating bath, the anode electrode disposed in the plating bath,
A power supply for applying a voltage between the terminal portion and the anode electrode;
including,
Electrode forming plating equipment.

JP2018045103A 2018-03-13 2018-03-13 Substrate holder and plating apparatus for electrode formation Pending JP2019157199A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021102806A (en) * 2019-12-26 2021-07-15 トヨタ自動車株式会社 Method of producing wiring board, and wiring board
CN115775849A (en) * 2022-12-22 2023-03-10 通威太阳能（成都）有限公司 Solar cell, preparation method thereof, electroplating device and electroplating system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021102806A (en) * 2019-12-26 2021-07-15 トヨタ自動車株式会社 Method of producing wiring board, and wiring board
JP7310599B2 (en) 2019-12-26 2023-07-19 トヨタ自動車株式会社 Wiring board manufacturing method and wiring board
CN115775849A (en) * 2022-12-22 2023-03-10 通威太阳能（成都）有限公司 Solar cell, preparation method thereof, electroplating device and electroplating system

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