JP2019137920A - Silver paste and semiconductor device made using the same - Google Patents

Silver paste and semiconductor device made using the same Download PDF

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JP2019137920A
JP2019137920A JP2019038420A JP2019038420A JP2019137920A JP 2019137920 A JP2019137920 A JP 2019137920A JP 2019038420 A JP2019038420 A JP 2019038420A JP 2019038420 A JP2019038420 A JP 2019038420A JP 2019137920 A JP2019137920 A JP 2019137920A
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Prior art keywords
silver
silver paste
particles
paste
mass
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Inventor
石川　大
Masaru Ishikawa
大 石川
祐貴 川名
Yuki Kawana
祐貴 川名
松本　博
Hiroshi Matsumoto
博 松本
名取　美智子
Michiko Natori
美智子 名取
偉夫 中子
Takeo Nakako
偉夫 中子
田中　俊明
Toshiaki Tanaka
俊明 田中
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Showa Denko Materials Co Ltd
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Hitachi Chemical Co Ltd
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Publication of JP2019137920A publication Critical patent/JP2019137920A/en
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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Abstract

To provide a silver paste which is excellent in all of adhesive strength, electric conductivity and thermal conductivity in a good balance when sintered at low temperature and low pressure (or no pressure).SOLUTION: A silver paste comprises tabular silver particles with a center line average surface roughness Ra of 1 nm or less, silver particles with a center line average surface roughness Ra of 2 nm to 20 nm and a particle size of 1 μm to 20 μm, and solvent.SELECTED DRAWING: None

Description

本発明は、銀ペースト及びそれを用いた半導体装置に関する。更に詳しくは、パワー半導体、ＬＳＩ、発光ダイオード（ＬＥＤ）等の半導体素子をリードフレーム、セラミック配線板、ガラスエポキシ配線板、ポリイミド配線板等の支持部材に接着するのに使用される銀ペースト及びそれを用いた半導体装置に関する。   The present invention relates to a silver paste and a semiconductor device using the same. More specifically, a silver paste used for bonding semiconductor elements such as power semiconductors, LSIs, and light emitting diodes (LEDs) to support members such as lead frames, ceramic wiring boards, glass epoxy wiring boards, polyimide wiring boards, and the like The present invention relates to a semiconductor device using.

半導体装置を製造する際、半導体素子と支持部材とを互いに接着させる方法としては、エポキシ樹脂、ポリイミド樹脂等のバインダ樹脂、銀粉等の充てん剤、溶剤組成物などを混合し、ペースト状として、これを接着剤として使用する方法がある。近年では半導体パッケージの高集積化に伴いパワー密度（Ｗ・ｃｍ−３）が高くなっており、半導体素子の動作安定性を確保するために、接着剤には高い放熱性が求められる。また、半導体素子の使用環境温度が高温となっているために、接着剤には耐熱性も求められる。さらに、環境負荷の低減のためにＰｂを含まない接着剤が求められている。以上のような経緯から、バインダ樹脂成分を含まない焼結タイプの銀ペーストが研究されている。 When manufacturing a semiconductor device, a semiconductor element and a support member are bonded to each other by mixing a binder resin such as an epoxy resin and a polyimide resin, a filler such as silver powder, a solvent composition, etc. Is used as an adhesive. In recent years, the power density (W · cm −3 ) has increased with the high integration of semiconductor packages, and high heat dissipation is required for adhesives to ensure the operational stability of semiconductor elements. Moreover, since the use environment temperature of the semiconductor element is high, the adhesive is also required to have heat resistance. Furthermore, there is a need for an adhesive that does not contain Pb in order to reduce the environmental burden. From the above circumstances, a sintered type silver paste not containing a binder resin component has been studied.

銀ペーストの使用方法としては、例えば、ディスペンサー、印刷機、スタンピングマシン等を用いて、銀ペーストを支持部材のダイパッドに塗布した後、半導体素子をダイボンディングし、加熱焼結により接着させ半導体装置とする方法が挙げられる。銀ペーストに要求される特性は、接着時の工法に関わる内容と、接着後の銀焼結体の物性に関わる内容とに大別される。   As a method of using the silver paste, for example, using a dispenser, a printing machine, a stamping machine, etc., after applying the silver paste to the die pad of the support member, the semiconductor element is die-bonded and bonded by heat sintering to the semiconductor device. The method of doing is mentioned. The characteristics required for the silver paste are broadly classified into the contents relating to the construction method at the time of bonding and the contents relating to the physical properties of the silver sintered body after bonding.

接着時の工法に関わる内容としては、半導体部材の損傷を防ぐために、低温（例えば３００℃程度）、及び低加圧（例えば０．１ＭＰａ程度）又は無加圧で接着できることが要求される。また、スループット向上の観点から接着に要する時間の短縮が求められる。一方、接着後の銀焼結体の物性に関わる内容としては、半導体部材との接着を確保するために高接着性（高いダイシェア強度）が要求される。また、銀焼結体の高放熱特性（高熱伝導性）も求められている。さらに、長期間にわたる接続信頼性を確保するために、銀焼結体の耐熱性及び高緻密性（銀焼結体中に空孔が少ないこと）が要求される。   The contents related to the method of bonding are required to be able to bond at low temperature (for example, about 300 ° C.) and low pressure (for example, about 0.1 MPa) or no pressure in order to prevent damage to the semiconductor member. In addition, shortening the time required for adhesion is required from the viewpoint of improving throughput. On the other hand, as the contents relating to the physical properties of the silver sintered body after bonding, high adhesion (high die shear strength) is required in order to ensure adhesion with the semiconductor member. Moreover, the high heat dissipation characteristic (high thermal conductivity) of a silver sintered compact is also calculated | required. Furthermore, in order to ensure connection reliability over a long period of time, the heat resistance and high density of the silver sintered body (the number of voids in the silver sintered body is required) are required.

従来技術の銀ペーストとして、例えば特許文献１〜４に開示されるような銀粒子と溶剤とを混合した銀ペーストが提案されている。   As silver paste of a prior art, the silver paste which mixed the silver particle and solvent which are disclosed by patent documents 1-4, for example is proposed.

特許第４３５３３８０号公報Japanese Patent No. 4353380 特開２０１２−８４５１４号公報JP 2012-84514 A 特許４４１４１４５号公報Japanese Patent No. 4414145 特開２０１２−１１９１３２号公報JP 2012-119132 A

従来技術の銀ペーストに係る問題点は、必ずしも接着強度、導電性及び熱伝導性のすべてを満足できるものではない点である。   The problem with the prior art silver paste is that it does not necessarily satisfy all of adhesive strength, electrical conductivity and thermal conductivity.

このような問題点に鑑みて、本発明は、低温かつ低加圧（あるいは無加圧）で焼結した場合であっても、接着強度、導電性及び熱伝導性のすべてにおいてバランスよく優れた銀ペースト及びそれを用いた半導体装置を提供することを目的とする。   In view of such problems, the present invention is excellent in a balanced manner in all of adhesive strength, conductivity, and thermal conductivity even when sintered at low temperature and low pressure (or no pressure). An object is to provide a silver paste and a semiconductor device using the same.

本発明は、中心線平均表面粗さＲａが１ｎｍ以下である板状の銀粒子と、中心線平均表面粗さＲａが２ｎｍ〜２０ｎｍであり、かつ粒子径が１μｍ〜２０μｍである銀粒子と、溶剤と、を含有する、銀ペーストを提供する。   The present invention relates to plate-like silver particles having a center line average surface roughness Ra of 1 nm or less, silver particles having a center line average surface roughness Ra of 2 nm to 20 nm, and a particle diameter of 1 μm to 20 μm, And a silver paste containing a solvent.

上記板状の銀粒子の中心線平均表面粗さＲａが０．５ｎｍ以下であることが望ましい。   It is desirable that the centerline average surface roughness Ra of the plate-like silver particles is 0.5 nm or less.

上記板状の銀粒子が単結晶であることが望ましい。   The plate-like silver particles are desirably single crystals.

上記板状の銀粒子における厚み方向の最大長さａと面方向の最大長さｂとの比が、２≦ｂ／ａを満たすことが望ましい。   The ratio of the maximum length a in the thickness direction to the maximum length b in the surface direction of the plate-like silver particles preferably satisfies 2 ≦ b / a.

上記板状の銀粒子における厚み方向の最大長さａ及び面方向の最大長さｂが、それぞれａ≦５００ｎｍ及び１００ｎｍ≦ｂ≦１００００ｎｍを満たすことが望ましい。   It is desirable that the maximum length a in the thickness direction and the maximum length b in the plane direction of the plate-like silver particles satisfy a ≦ 500 nm and 100 nm ≦ b ≦ 10000 nm, respectively.

上記粒子径が１μｍ〜２０μｍである銀粒子の含有量が、銀粒子全量基準で８０質量％以下であることが望ましい。   The content of silver particles having a particle diameter of 1 μm to 20 μm is desirably 80% by mass or less based on the total amount of silver particles.

上記銀ペーストは、粒子径が０．０１μｍ以上１μｍ未満である球状の銀粒子を更に含有することが望ましい。   The silver paste preferably further contains spherical silver particles having a particle diameter of 0.01 μm or more and less than 1 μm.

上記銀ペーストは、Ｍｇ、Ａｌ、Ｓｉ、Ｓｃ、Ｔｉ、Ｖ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ、Ｇａ、Ｇｅ、Ｙ、Ｚｒ、Ｎｂ、Ｍｏ、Ｔｃ、Ｒｕ、Ｒｈ、Ｐｄ、Ｃｄ、Ｉｎ、Ｓｎ、Ｓｂ、Ｔａ、Ｗ、Ｒｅ、Ｏｓ、Ｉｒ、Ｐｔ、Ａｕ、及びＢｉからなる群より選ばれる少なくとも１種を含む金属又は半金属粒子を、銀ペースト全量基準で０．０１〜５．０質量％含有することが望ましい。   The silver paste includes Mg, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd. , Cd, In, Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, and metal or metalloid particles containing at least one selected from the group consisting of Bi on the basis of the total amount of silver paste. It is desirable to contain 01-5.0 mass%.

また、本発明は、上記銀ペーストを焼結してなる焼結体を介して、半導体素子と半導体素子搭載用支持部材とが互いに接着した構造を有する半導体装置を提供する。   The present invention also provides a semiconductor device having a structure in which a semiconductor element and a semiconductor element mounting support member are bonded to each other through a sintered body obtained by sintering the silver paste.

本発明によれば、低温かつ低加圧（あるいは無加圧）で焼結した場合であっても、接着強度、導電性及び熱伝導性のすべてにおいてバランスよく優れた銀ペースト及びそれを用いた半導体装置を提供することができる。   According to the present invention, even when sintered at a low temperature and low pressure (or no pressure), a silver paste excellent in balance in all of adhesive strength, conductivity and thermal conductivity and the use thereof are used. A semiconductor device can be provided.

銀粒子ＬＭ１のＳＥＭ写真である。It is a SEM photograph of silver particle LM1. 銀粒子ＡｇＣ２３９のＳＥＭ写真である。It is a SEM photograph of silver particle AgC239. 銀粒子ＡｇＣ２１２ＤのＳＥＭ写真である。It is a SEM photograph of silver particle AgC212D. 銀粒子ＴＣ−２０Ｅ−ＬのＳＥＭ写真である。It is a SEM photograph of silver particle TC-20E-L. 実施例１の半導体部材の接続断面のＳＥＭ写真である。4 is a SEM photograph of a connection cross section of the semiconductor member of Example 1. 実施例２の半導体部材の接続断面のＳＥＭ写真である。4 is a SEM photograph of a connection cross section of a semiconductor member of Example 2. 実施例３の半導体部材の接続断面のＳＥＭ写真である。4 is a SEM photograph of a connection cross section of a semiconductor member of Example 3. 比較例１の半導体部材の接続断面のＳＥＭ写真である。4 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 1. 比較例２の半導体部材の接続断面のＳＥＭ写真である。4 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 2. 比較例３の半導体部材の接続断面のＳＥＭ写真である。10 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 3. 比較例４の半導体部材の接続断面のＳＥＭ写真である。10 is a SEM photograph of a connection cross section of a semiconductor member of Comparative Example 4; 本発明に係る半導体装置の一実施形態を示す模式断面図である。1 is a schematic cross-sectional view showing an embodiment of a semiconductor device according to the present invention. 本発明に係る半導体装置の他の実施形態を示す模式断面図である。It is a schematic cross section which shows other embodiment of the semiconductor device which concerns on this invention.

以下、本発明の好適な実施形態について詳細に説明する。   Hereinafter, preferred embodiments of the present invention will be described in detail.

本実施形態に係る銀ペーストは、中心線平均表面粗さＲａが１ｎｍ以下である板状の銀粒子（以下、「銀粒子Ａ」ともいう。）と、中心線平均表面粗さＲａが２ｎｍ〜２０ｎｍであり、かつ粒子径が１μｍ〜２０μｍである銀粒子（以下、「銀粒子Ｂ」ともいう。）と、溶剤と、を含有する。   The silver paste according to the present embodiment has plate-like silver particles (hereinafter also referred to as “silver particles A”) having a center line average surface roughness Ra of 1 nm or less, and a center line average surface roughness Ra of 2 nm to Silver particles (hereinafter also referred to as “silver particles B”) having a particle diameter of 20 nm and a particle diameter of 1 μm to 20 μm and a solvent are contained.

本実施形態に用いられる銀粒子Ａは、板状であり、中心線平均表面粗さＲａが１ｎｍ以下の銀粒子である。銀粒子ＡのＲａは、望ましくは０．５ｎｍ以下、より望ましくは０．１ｎｍ以下である。なお、本明細書における「板状」とは、銀粒子のアスペクト比（粒子径／厚さ）が２〜１０００の範囲である形状を意味する。   The silver particles A used in the present embodiment are plate-like, and are silver particles having a center line average surface roughness Ra of 1 nm or less. The Ra of the silver particles A is desirably 0.5 nm or less, and more desirably 0.1 nm or less. In addition, the “plate shape” in the present specification means a shape in which the aspect ratio (particle diameter / thickness) of silver particles is in the range of 2 to 1000.

本明細書における「中心線平均表面粗さ」は、「算術平均粗さ」とも呼ばれ、ＪＩＳ Ｂ０６０１：２００１で定義される「算術平均粗さ」を意味する。銀粒子の中心線平均表面粗さＲａの測定方法としては、比表面積から求める方法であるＢＥＴ法、ブレーン法、原子間力顕微鏡（Ａｔｏｍｉｃ Ｆｏｒｃｅ Ｍｉｃｒｏｓｃｏｐｅ；ＡＦＭ）を使用する方法、レーザー式の顕微鏡を使用する方法等の公知の方法を用いればよい。   The “center line average surface roughness” in the present specification is also called “arithmetic average roughness” and means “arithmetic average roughness” defined in JIS B0601: 2001. As a method of measuring the center line average surface roughness Ra of the silver particles, a BET method, a brain method, a method using an atomic force microscope (AFM), which is a method for obtaining from a specific surface area, a laser type microscope is used. A known method such as a method to be used may be used.

銀粒子Ａの粒子径は、特に限定されないが、１〜２０μｍであることが望ましく、１〜１０μｍであることがより望ましく、１〜５μｍであることが更に望ましい。なお、銀粒子の粒子径は、例えばＳＥＭを用いて銀粒子を平面視したときの、銀粒子の面積の平方根とする。   The particle diameter of the silver particles A is not particularly limited, but is preferably 1 to 20 μm, more preferably 1 to 10 μm, and still more preferably 1 to 5 μm. In addition, let the particle diameter of a silver particle be a square root of the area of a silver particle when silver particle is planarly viewed using SEM, for example.

銀粒子Ａにおける厚み方向の最大長さａと面方向の最大長さｂとの比は、２≦ｂ／ａを満たすことが望ましく、５≦ｂ／ａを満たすことがより望ましく、１０≦ｂ／ａを満たすことが更に望ましい。ｂ／ａが上記の条件を満たすと、銀ペーストと被着面との接着面積を確保することができ、接着強度をより向上させることができる。また、ａとｂとが、それぞれａ≦５００ｎｍ、１００ｎｍ≦ｂ≦１００００ｎｍを満たすことが望ましく、ａ≦３００ｎｍ、３００ｎｍ≦ｂ≦６０００ｎｍを満たすことがより望ましく、ａ≦１００ｎｍ、５００ｎｍ≦ｂ≦３０００ｎｍを満たすことが更に望ましい。ｂが上記の条件を満たすと、薄膜の銀焼結体を形成する場合にも好適に用いることができる。また、ｂの値にもよるが、十分なアスペクト比を確保するためにも、ａは上記の条件を満たすことが望ましい。なお、ａは、例えばａ≧１０ｎｍとすることができる。   The ratio of the maximum length a in the thickness direction to the maximum length b in the plane direction of the silver particles A preferably satisfies 2 ≦ b / a, more preferably satisfies 5 ≦ b / a, and 10 ≦ b. It is further desirable to satisfy / a. When b / a satisfies the above conditions, an adhesive area between the silver paste and the adherend surface can be secured, and the adhesive strength can be further improved. Further, a and b preferably satisfy a ≦ 500 nm and 100 nm ≦ b ≦ 10000 nm, respectively, more preferably satisfy a ≦ 300 nm and 300 nm ≦ b ≦ 6000 nm, and satisfy a ≦ 100 nm and 500 nm ≦ b ≦ 3000 nm. It is more desirable to satisfy. When b satisfies the above-mentioned conditions, it can be suitably used when forming a thin-film silver sintered body. Further, although depending on the value of b, it is desirable that a satisfies the above-mentioned conditions in order to ensure a sufficient aspect ratio. Note that a can be set to a ≧ 10 nm, for example.

銀粒子Ａは、単結晶であることが望ましい。なお、単結晶である銀粒子Ａを作製する方法としては、例えば特開２０１２−１６７３７８号公報、Ｂｅｎｊａｍｉｎ Ｗｉｌｅｙら，ＮＡＮＯ ＬＥＴＴＥＲＳ，Ｖｏｌ． ４，Ｎｏ．９，１７３３−１７３９，２００４、上山竜祐ら，Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｃｅｒａｍｉｃ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ，１０７，［１］，６０−６５，１９９９に記載されている公知の方法を用いればよい。   The silver particles A are preferably single crystals. In addition, as a method of producing the silver particle A which is a single crystal, for example, JP2012-167378A, Benjamin Wiley et al., NANO LETTERS, Vol. 4, no. 9, 1733-1739, 2004, Ryusuke Kamiyama et al., Journal of the Ceramic Society of Japan, 107, [1], 60-65, 1999 may be used.

銀粒子Ａの含有量は、銀粒子全量基準で、２０質量％以上であることが望ましく、５０質量％以上であることがより望ましく、７０質量％以上であることが更に望ましい。また、銀粒子Ａの含有量は、９９質量％以下であることが望ましく、９５質量％以下であることがより望ましく、９０質量％以下であることが更に望ましい。   The content of the silver particles A is desirably 20% by mass or more, more desirably 50% by mass or more, and further desirably 70% by mass or more based on the total amount of silver particles. Further, the content of the silver particles A is desirably 99% by mass or less, more desirably 95% by mass or less, and further desirably 90% by mass or less.

本実施形態に係る銀ペーストは、銀粒子Ａに加えて、中心線平均表面粗さＲａが２ｎｍ〜２０ｎｍであり、粒子径が１μｍ〜２０μｍである銀粒子Ｂを含有する。銀粒子Ａと銀粒子Ｂとを含有することで、銀粒子同士の充填性を高め、形成される銀焼結体の接着強度、導電性及び熱伝導性を向上させることができる。   In addition to the silver particles A, the silver paste according to the present embodiment contains silver particles B having a center line average surface roughness Ra of 2 nm to 20 nm and a particle diameter of 1 μm to 20 μm. By containing the silver particles A and the silver particles B, it is possible to improve the filling property between the silver particles and to improve the adhesive strength, conductivity and thermal conductivity of the formed silver sintered body.

銀粒子Ｂとしては、板状の銀粒子を用いることができる。銀粒子Ｂの中心線平均表面粗さＲａは、２ｎｍ〜２０ｎｍであり、２ｎｍ〜１５ｎｍであることが望ましく、２ｎｍ〜１０ｎｍであることがより望ましい。また、銀粒子Ｂの粒子径は、１〜２０μｍであり、１〜１５μｍであることが望ましく、１〜１０μｍであることがより望ましい。   As the silver particles B, plate-like silver particles can be used. The center line average surface roughness Ra of the silver particles B is 2 nm to 20 nm, preferably 2 nm to 15 nm, and more preferably 2 nm to 10 nm. Moreover, the particle diameter of the silver particle B is 1-20 micrometers, it is desirable that it is 1-15 micrometers, and it is more desirable that it is 1-10 micrometers.

銀粒子Ｂの含有量は、銀粒子全量基準で、５質量％以上であることが望ましく、１０質量％以上であることがより望ましく、２０質量％以上であることが更に望ましい。一方、銀粒子Ｂの含有量は、銀粒子全量基準で、８０質量％以下であることが望ましく、７５質量％以下であることがより望ましく、７０質量％以下であることが更に望ましい。銀粒子Ｂの含有量が上記範囲内であると、特に導電性及び熱伝導性をより向上させることができる。   The content of the silver particles B is preferably 5% by mass or more, more preferably 10% by mass or more, and still more preferably 20% by mass or more based on the total amount of silver particles. On the other hand, the content of the silver particles B is desirably 80% by mass or less, more desirably 75% by mass or less, and further desirably 70% by mass or less, based on the total amount of silver particles. When the content of the silver particles B is within the above range, the electrical conductivity and thermal conductivity can be particularly improved.

本実施形態に係る銀ペーストは、銀粒子Ａ及び銀粒子Ｂ以外の銀粒子を更に含有していてもよく、例えば、粒子径が０．０１μｍ以上１μｍ未満である球状の銀粒子を更に含有していてもよい。粒子径が０．０１μｍ以上１μｍ未満である球状の銀粒子を含有することによって、銀粒子同士の充填性を更に高め、形成される銀焼結体の緻密度を向上させることができ、その結果、銀焼結体の物性をバルク銀に近づけることができる。   The silver paste according to the present embodiment may further contain silver particles other than the silver particles A and the silver particles B. For example, the silver paste further contains spherical silver particles having a particle diameter of 0.01 μm or more and less than 1 μm. It may be. By containing spherical silver particles having a particle diameter of 0.01 μm or more and less than 1 μm, it is possible to further improve the packing property between the silver particles and improve the density of the formed silver sintered body. The physical properties of the silver sintered body can be made close to that of bulk silver.

銀粒子は、通常その表面が有機物によって被覆されている。以下、この有機物を保護剤と記す。本実施形態で使用される銀粒子における保護剤の脱離温度は、望ましくは３００℃以下、より望ましくは２５０℃以下、更に望ましくは２３０℃以下である。   The surface of silver particles is usually coated with an organic substance. Hereinafter, this organic substance is referred to as a protective agent. The desorption temperature of the protective agent in the silver particles used in this embodiment is desirably 300 ° C. or less, more desirably 250 ° C. or less, and further desirably 230 ° C. or less.

本実施形態において使用する銀粒子をほぼ同時に焼結させ緻密な銀焼結体を得るために、各々の銀粒子の保護剤の脱離温度は近いことが望ましい。具体的には、各々の銀粒子の保護剤の脱離温度の差は５０℃以内であることが望ましく、３０℃以内であることが望ましい。   In order to obtain a dense silver sintered body by sintering the silver particles used in the present embodiment almost simultaneously, it is desirable that the desorption temperature of the protective agent of each silver particle is close. Specifically, the difference in the desorption temperature of the protective agent for each silver particle is preferably within 50 ° C., and preferably within 30 ° C.

銀粒子の保護剤の脱離温度は示差熱−熱重量同時測定（Ｔｈｅｒｍｏｇｒａｖｉｍｅｔｒｙ−Ｄｉｆｆｅｒｅｎｔｉａｌ Ｔｈｅｒｍａｌ Ａｎａｌｙｓｉｓ；ＴＧ−ＤＴＡ）を大気中で行うことにより求めることができる。   The desorption temperature of the protective agent for the silver particles can be determined by performing differential thermal-thermogravimetric simultaneous measurement (TG-DTA) in the atmosphere.

銀粒子における保護剤の量は、保護剤の質量：銀粒子の質量が、０．１：９９．９〜２０：８０となる量であることが望ましい。保護剤の量が上記下限値以上であると、銀粒子を十分に被覆しやすくなる。その結果、銀粒子同士の凝集及び銀粒子の溶剤への分散性の悪化を抑制することができる。一方、保護剤の量が上記上限値以下であると、銀粒子が焼結する際の体積収縮の程度を抑制できる。その結果、銀焼結体の緻密度を確保することができる。   The amount of the protective agent in the silver particles is preferably such that the mass of the protective agent: the mass of the silver particles is 0.1: 99.9 to 20:80. It becomes easy to fully coat | cover silver particle as the quantity of a protective agent is more than the said lower limit. As a result, aggregation of silver particles and deterioration of dispersibility of silver particles in a solvent can be suppressed. On the other hand, when the amount of the protective agent is not more than the above upper limit value, the degree of volume shrinkage when the silver particles are sintered can be suppressed. As a result, the density of the silver sintered body can be ensured.

銀粒子の保護剤の種類としては、特にカルボン酸化合物を好適に使用でき、より望ましくは炭素数が２〜２０の脂肪族モノカルボン酸である。   As the kind of the protective agent for silver particles, a carboxylic acid compound can be particularly preferably used, and more preferably an aliphatic monocarboxylic acid having 2 to 20 carbon atoms.

銀ペースト中の銀粒子の量としては、目的とする銀ペーストの粘度及びチキソ性に合わせて、適宜決めることができる。銀焼結体の接着強度及び熱伝導性をより向上させるためには、銀粒子は、銀ペースト全量基準で８０質量％以上であることが望ましい。   The amount of silver particles in the silver paste can be appropriately determined according to the viscosity and thixotropy of the target silver paste. In order to further improve the adhesive strength and thermal conductivity of the silver sintered body, the silver particles are desirably 80% by mass or more based on the total amount of the silver paste.

本実施形態に係る銀ペーストは、銀以外の金属元素又は半金属元素として、Ｍｇ、Ａｌ、Ｓｉ、Ｓｃ、Ｔｉ、Ｖ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ、Ｇａ、Ｇｅ、Ｙ、Ｚｒ、Ｎｂ、Ｍｏ、Ｔｃ、Ｒｕ、Ｒｈ、Ｐｄ、Ｃｄ、Ｉｎ、Ｓｎ、Ｓｂ、Ｔａ、Ｗ、Ｒｅ、Ｏｓ、Ｉｒ、Ｐｔ、Ａｕ及びＢｉから選ばれる少なくとも１種類の元素を含有していてもよい。   The silver paste according to the present embodiment includes Mg, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, and other metal elements or metalloid elements other than silver. Contains at least one element selected from Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, and Bi It may be.

これらの元素は、銀ペーストと特定の被着金属との接着強度向上、低融点元素の添加による低温での接着の達成、銀焼結体の機械的特性の向上、銀焼結体の耐硫化性の付与等の目的に応じて、その種類を適宜選択して添加される。   These elements improve the adhesive strength between the silver paste and the specific deposited metal, achieve low-temperature adhesion by adding low melting point elements, improve the mechanical properties of the silver sintered body, and sulfidation resistance of the silver sintered body Depending on the purpose of imparting properties, the type is appropriately selected and added.

これらの元素の含有量は、銀ペースト全量基準で、０．０１〜５．０質量％であることが望ましい。０．０１質量％以上であると、所望する効果が得られやすくなる。また、５．０質量％以下であると、銀ペーストの焼結の阻害、及び銀焼結体の接着強度、熱伝導性、電気伝導性等の特性の悪化を抑制できる。   The content of these elements is preferably 0.01 to 5.0% by mass based on the total amount of the silver paste. When it is 0.01% by mass or more, a desired effect is easily obtained. Further, when the content is 5.0% by mass or less, inhibition of sintering of the silver paste and deterioration of properties such as adhesive strength, thermal conductivity, and electrical conductivity of the silver sintered body can be suppressed.

これらの元素は、銀粒子と混合して銀ペーストとするために、粒子状として含有されることが望ましく、その粒子径は０．０１〜１０μｍであることが望ましい。   These elements are desirably contained in the form of particles in order to be mixed with silver particles to form a silver paste, and the particle diameter is desirably 0.01 to 10 μm.

また卑金属元素及び半金属元素は、通常、その表面が酸化されており、そのまま銀ペースト中に添加しても十分な効果が得られない可能性がある。そのため、これら元素とともにフラックスを添加することが望ましい。フラックスは公知の種類のものを使用でき、フラックスの量は適宜選定すればよい。また、より効果的な方法としては、上記元素を含む粒子として表面が銀めっき処理された粒子を使用する方法が挙げられる。銀めっき処理された粒子を用いると、銀ペーストの保存時及び焼結時の耐酸化性が向上する。銀めっきされた粒子は、市販のものを用いてもよいし、公知の方法で作製されたものを用いてもよい。   Further, the surface of base metal elements and metalloid elements is usually oxidized, and there is a possibility that sufficient effects cannot be obtained even if they are added as they are to the silver paste. Therefore, it is desirable to add flux together with these elements. A known type of flux can be used, and the amount of flux may be appropriately selected. Moreover, as a more effective method, a method of using particles whose surfaces are silver-plated as particles containing the above-described elements can be used. Use of silver-plated particles improves the oxidation resistance during storage and sintering of the silver paste. As the silver-plated particles, commercially available particles may be used, or particles prepared by a known method may be used.

本実施形態における溶剤としては、特に限定されず、公知の溶剤を使用できる。溶剤としては、アルコール類、アルデヒド類、カルボン酸類、エーテル類、エステル類、アミン類、単糖類、多糖類、直鎖の炭化水素類、脂肪酸類、芳香族類等から選択することが可能であり、複数の溶剤を組み合わせて使用することも可能である。上記の中から銀粒子の分散に適した溶剤を選択することが望ましく、具体的には、アルコール構造、エーテル構造又はエステル構造を有する溶剤が、焼結後の銀焼結体の熱伝導性、導電性及び接着強度をより向上させることができる点から特に望ましい。   It does not specifically limit as a solvent in this embodiment, A well-known solvent can be used. Solvents can be selected from alcohols, aldehydes, carboxylic acids, ethers, esters, amines, monosaccharides, polysaccharides, linear hydrocarbons, fatty acids, aromatics, etc. It is also possible to use a plurality of solvents in combination. It is desirable to select a solvent suitable for the dispersion of silver particles from the above. Specifically, the solvent having an alcohol structure, an ether structure, or an ester structure is a thermal conductivity of the sintered silver body after sintering, This is particularly desirable from the viewpoint that the conductivity and the adhesive strength can be further improved.

溶剤の沸点は、特に限定されないが、１００℃〜３５０℃であることが望ましい。半導体素子を支持部材に接続する温度範囲において、蒸発して銀焼結体に残存しない溶剤であることが望ましい。溶剤の沸点が１００℃以上であると、銀ペーストの使用時に室温でも溶剤が蒸発するのを抑制でき、その結果、銀ペーストの粘度安定性、塗布性等を確保できる。また、溶剤の沸点が３５０℃以下であると、半導体素子の接続する温度で溶剤を蒸発させやすく、銀焼結体に溶剤が残存して銀焼結体の特性が低下するのを抑制できる。   Although the boiling point of a solvent is not specifically limited, It is desirable that it is 100 to 350 degreeC. It is desirable that the solvent does not evaporate and remain in the silver sintered body in the temperature range where the semiconductor element is connected to the support member. When the boiling point of the solvent is 100 ° C. or higher, the solvent can be prevented from evaporating even at room temperature when the silver paste is used, and as a result, the viscosity stability and coating property of the silver paste can be ensured. Further, when the boiling point of the solvent is 350 ° C. or less, it is easy to evaporate the solvent at the temperature at which the semiconductor element is connected, and it can be suppressed that the solvent remains in the silver sintered body and the characteristics of the silver sintered body are deteriorated.

また、溶剤以外の有機成分を添加剤として加えてもよい。添加剤の種類としては、ペースト中の銀粒子の沈降防止剤、銀粒子の焼結促進のためのフラックス剤等が挙げられる。添加剤は、溶剤と同様に、銀ペーストを焼結する温度で系外に脱離するものが望ましい。   Moreover, you may add organic components other than a solvent as an additive. Examples of the additive include an anti-settling agent for silver particles in the paste, a flux agent for promoting the sintering of silver particles, and the like. As in the case of the solvent, the additive is preferably removed from the system at a temperature at which the silver paste is sintered.

銀ペースト中の溶剤の量は、銀ペースト全量基準で２０質量％未満であることが望ましい。溶剤が２０質量％未満であると、銀ペーストを焼結した際の溶剤の蒸発に伴う体積収縮を抑制でき、形成される銀焼結体の緻密性を確保できる。   The amount of the solvent in the silver paste is desirably less than 20% by mass based on the total amount of the silver paste. When the solvent is less than 20% by mass, volume shrinkage due to evaporation of the solvent when the silver paste is sintered can be suppressed, and the denseness of the formed silver sintered body can be secured.

本実施形態に係る銀ペーストを製造するには、銀粒子及び溶剤を、必要に応じて添加される各種添加剤とともに、一括又は分割して撹拌器、らいかい器、３本ロール、プラネタリーミキサー等の分散・溶解装置を適宜組み合わせ、必要に応じて加熱して混合、溶解、解粒混練又は分散して均一なペースト状とすればよい。   In order to produce the silver paste according to the present embodiment, the silver particles and the solvent, together with various additives to be added as necessary, are collectively or divided into a stirrer, a raid device, a three roll, a planetary mixer. The dispersing / dissolving devices such as the above may be appropriately combined, and heated, if necessary, mixed, dissolved, granulated and kneaded or dispersed to form a uniform paste.

本実施形態に係る銀ペーストを加熱して焼結させる方法としては、公知の方法を利用できる。ヒーターによる外部加熱以外にも、紫外線ランプ、レーザー、マイクロ波等を好適に用いることができる。銀ペーストの加熱温度は、銀ペースト中の溶剤、添加剤等の有機成分が系外へ脱離する温度以上であることが望ましい。具体的には、加熱温度の範囲は、１５０℃以上３００℃以下であることが望ましく、１５０℃以上２５０℃以下であることがより望ましい。加熱温度を３００℃以下とすることで、一般的な半導体部材を接続する場合は、当該部材へのダメージを回避することができ、加熱温度を１５０℃以上とすることで、保護剤の脱離が起こりやすくなる。   As a method for heating and sintering the silver paste according to this embodiment, a known method can be used. In addition to external heating by a heater, an ultraviolet lamp, laser, microwave, or the like can be suitably used. The heating temperature of the silver paste is preferably equal to or higher than the temperature at which organic components such as solvents and additives in the silver paste are desorbed from the system. Specifically, the range of the heating temperature is desirably 150 ° C. or more and 300 ° C. or less, and more desirably 150 ° C. or more and 250 ° C. or less. When a general semiconductor member is connected by setting the heating temperature to 300 ° C. or less, damage to the member can be avoided, and by removing the protective agent by setting the heating temperature to 150 ° C. or more. Is likely to occur.

銀ペーストの加熱時間は、設定した温度において、保護剤、溶剤等の有機物の脱離が完了する時間とすればよい。適切な加熱温度及び加熱時間の範囲は、銀ペーストのＴＧ−ＤＴＡ測定を行うことで見積もることができる。   The heating time of the silver paste may be a time at which desorption of organic substances such as a protective agent and a solvent is completed at a set temperature. The range of appropriate heating temperature and heating time can be estimated by performing TG-DTA measurement of the silver paste.

また、銀ペーストを加熱する際の工程は適宜決めることができる。特に、溶剤の沸点を超える温度で焼結を行う場合には、溶剤の沸点以下の温度で予熱を行い、予め溶剤をある程度揮発させた上で焼結を行うと、より緻密な銀焼結体を得やすい。銀ペーストを加熱する際の昇温速度は、溶剤の沸点未満で焼結する場合には特に制限されない。溶剤の沸点を超える温度で焼結する場合には、昇温速度を１℃／秒以下とするか、予熱工程を行うことが望ましい。   Moreover, the process at the time of heating a silver paste can be determined suitably. In particular, when sintering is performed at a temperature exceeding the boiling point of the solvent, pre-heating at a temperature lower than the boiling point of the solvent, and after performing the sintering after volatilizing the solvent to some extent, a denser silver sintered body Easy to get. The rate of temperature increase when heating the silver paste is not particularly limited when sintering is performed below the boiling point of the solvent. In the case of sintering at a temperature exceeding the boiling point of the solvent, it is desirable to set the heating rate to 1 ° C./second or less, or to perform a preheating step.

上記のように銀ペーストを焼結させることにより得られる銀焼結体は、１×１０−５Ω・ｃｍ以下の体積抵抗率、３０Ｗ／ｍ・Ｋ以上の熱伝導率、及び６５％以上の緻密度を有することが望ましい。なお、銀焼結体の緻密度は下記式に基づいて算出される。
緻密度［％］＝銀焼結体の密度［ｇ／ｃｍ３］×１００／銀の理論密度［１０．４９ｇ／ｃｍ３］ The silver sintered body obtained by sintering the silver paste as described above has a volume resistivity of 1 × 10 −5 Ω · cm or less, a thermal conductivity of 30 W / m · K or more, and 65% or more. It is desirable to have a denseness. The density of the silver sintered body is calculated based on the following formula.
Density [%] = density of sintered silver [g / cm 3 ] × 100 / theoretical density of silver [10.49 g / cm 3 ]

また、上記のように銀ペーストを焼結させることにより得られる銀焼結体の接着強度は、１０ＭＰａ以上であることが望ましく、１５ＭＰａ以上であることがより望ましい。   Further, the adhesive strength of the silver sintered body obtained by sintering the silver paste as described above is preferably 10 MPa or more, and more preferably 15 MPa or more.

本実施形態に係る半導体装置は、本実施形態に係る銀ペーストを焼結してなる焼結体を介して、半導体素子と半導体素子搭載用支持部材とが互いに接着したものである。   In the semiconductor device according to the present embodiment, the semiconductor element and the semiconductor element mounting support member are bonded to each other through a sintered body obtained by sintering the silver paste according to the present embodiment.

図１２は、本実施形態に係る半導体装置の一例を示す模式断面図である。図１２に示すように、半導体装置１０は、半導体素子搭載用支持部材であるとリードフレーム２ａと、リードフレーム（放熱体）２ｂ，２ｃと、本実施形態に係る銀ペーストの焼結体３を介してリードフレーム２ａに接続された半導体素子１と、これらをモールドするモールドレジン５とを備えている。半導体素子１は、２本のワイヤ４を介してリードフレーム２ｂ，２ｃにそれぞれ接続されている。   FIG. 12 is a schematic cross-sectional view showing an example of a semiconductor device according to the present embodiment. As shown in FIG. 12, the semiconductor device 10 includes a lead frame 2a, lead frames (heat radiating bodies) 2b and 2c, and a sintered body 3 of silver paste according to the present embodiment as a semiconductor element mounting support member. And a semiconductor element 1 connected to the lead frame 2a, and a mold resin 5 for molding them. The semiconductor element 1 is connected to lead frames 2b and 2c through two wires 4, respectively.

図１３は、本実施形態に係る半導体装置の別の例を示す模式断面図である。図１３に示すように、半導体装置２０は、基板６と、基板６を囲むように形成された半導体素子搭載用支持部材であるリードフレーム７と、本実施形態に係る銀ペーストの焼結体３を介してリードフレーム７上に接続された半導体素子であるＬＥＤチップ８と、これらを封止する透光性樹脂９とを備えている。ＬＥＤチップ８は、ワイヤ４を介してリードフレーム７に接続されている。   FIG. 13 is a schematic cross-sectional view showing another example of the semiconductor device according to the present embodiment. As shown in FIG. 13, the semiconductor device 20 includes a substrate 6, a lead frame 7 which is a semiconductor element mounting support member formed so as to surround the substrate 6, and the silver paste sintered body 3 according to the present embodiment. LED chip 8 which is a semiconductor element connected on lead frame 7 via, and translucent resin 9 which seals these. The LED chip 8 is connected to the lead frame 7 via the wire 4.

これらの半導体装置では、例えば、半導体素子搭載用支持部材上に銀ペーストをディスペンス法、スクリーン印刷法、スタンピング法等により塗布し、銀ペーストが塗布された部分に半導体素子を搭載し、加熱装置を用いて銀ペーストを焼結することによって、半導体素子と半導体素子搭載用支持部材とを互いに接着させることができる。また、銀ペーストの焼結後、ワイヤボンド工程及び封止工程を行うことにより、半導体装置が得られる。   In these semiconductor devices, for example, a silver paste is applied onto a semiconductor element mounting support member by a dispensing method, a screen printing method, a stamping method, etc., the semiconductor element is mounted on the portion where the silver paste is applied, and a heating device is installed. By using and sintering the silver paste, the semiconductor element and the semiconductor element mounting support member can be bonded to each other. Moreover, a semiconductor device is obtained by performing a wire bonding process and a sealing process after sintering the silver paste.

半導体素子搭載用支持部材としては、例えば、４２アロイリードフレーム、銅リードフレーム、パラジウムＰＰＦリードフレーム等のリードフレーム、ガラスエポキシ基板（ガラス繊維強化エポキシ樹脂からなる基板）、ＢＴ基板（シアネートモノマー及びそのオリゴマーとビスマレイミドからなるＢＴレジン使用基板）等の有機基板が挙げられる。   As the support member for mounting a semiconductor element, for example, a lead frame such as a 42 alloy lead frame, a copper lead frame, a palladium PPF lead frame, a glass epoxy substrate (a substrate made of glass fiber reinforced epoxy resin), a BT substrate (cyanate monomer and its component) And an organic substrate such as a BT resin-containing substrate made of an oligomer and bismaleimide.

以下に実施例を示し、本発明をより具体的に説明する。本発明は、これらの実施例により限定を受けるものではない。   Hereinafter, the present invention will be described in more detail with reference to examples. The present invention is not limited by these examples.

各実施例及び比較例における各特性の測定は、次のようにして実施した。   Measurement of each characteristic in each example and comparative example was performed as follows.

（１）銀粒子の形態観察
サンプルグリッド上にカーボン製の両面テープを貼り、カーボンテープ上に銀粉末を載せ、観察試料とした。卓上走査電子顕微鏡（日本電子株式会社、ＮｅｏＳｃｏｐｅ ＪＣＭ−５０００）により、電子加速電圧１０ｋＶで観察し、ＳＥＭ写真を撮影した。 (1) Observation of morphology of silver particles A double-sided carbon tape was attached on a sample grid, and silver powder was placed on the carbon tape to obtain an observation sample. The sample was observed with a desktop scanning electron microscope (JEOL Ltd., NeoScope JCM-5000) at an electron acceleration voltage of 10 kV, and an SEM photograph was taken.

（２）銀粒子の中心線平均表面粗さ
ＡＦＭ（エスアイアイ・ナノテクノロジー、ＳＰＩ４０００）を用い、ダイナミック・フォース・モード（ＤＦＭ）で銀粒子の表面粗さを測定した。具体的には、約１０ｍｇの銀粒子をアセトン１０ｍＬに加え、分散液を作製した。直径２ｃｍの円形サンプルグリッド上に、分散液を約１００μＬ滴下し、２５℃で約２４時間乾燥し、測定サンプルを得た。サンプルグリッドをＡＦＭ（エスアイアイ・ナノテクノロジー、ＳＰＩ４０００）にセットし、ＤＦＭで測定を行った。複数の銀粒子を含む視野範囲を走査対象とし、銀粒子の表面形状像を得た。この操作を繰り返し行い、１０〜２０個の銀粒子の表面形状像を得た。得られた各銀粒子の表面形状像について、最大粒子径の約９０％の長さに対して、表面粗さ解析を行った。得られた表面粗さの平均値を算出し、その平均値を銀粒子の中心線平均表面粗さとした。 (2) Centerline average surface roughness of silver particles The surface roughness of silver particles was measured by dynamic force mode (DFM) using AFM (SII Nanotechnology, SPI4000). Specifically, about 10 mg of silver particles was added to 10 mL of acetone to prepare a dispersion. About 100 μL of the dispersion was dropped on a circular sample grid having a diameter of 2 cm and dried at 25 ° C. for about 24 hours to obtain a measurement sample. The sample grid was set in AFM (SII Nanotechnology, SPI4000), and measurement was performed with DFM. A visual field range including a plurality of silver particles was used as a scanning target, and a surface shape image of the silver particles was obtained. This operation was repeated to obtain surface shape images of 10 to 20 silver particles. About the surface shape image of each obtained silver particle, surface roughness analysis was performed with respect to the length of about 90% of the maximum particle diameter. The average value of the obtained surface roughness was calculated, and the average value was defined as the center line average surface roughness of the silver particles.

（３）銀焼結体の密度及び緻密度
銀ペーストをホットプレート（井内盛栄堂、ＳＨＡＭＡＬ ＨＯＴＰＬＡＴＥ ＨＨＰ−４０１）により１１０℃で１０分間予熱し、更に２００℃で１時間加熱することで銀焼結体（約１０ｍｍ×１０ｍｍ×１ｍｍ）を得た。作製した銀焼結体を紙やすり（８００番）で研磨し、研磨後の銀焼結体の体積及び質量を測定した。これらの値から銀焼結体の密度を算出し、更に下記の式に従い緻密度を算出した。
緻密度［％］＝銀焼結体の密度［ｇ／ｃｍ３］×１００／銀の理論密度［１０．４９ｇ／ｃｍ３］ (3) Density and density of the silver sintered body The silver paste is preheated at 110 ° C. for 10 minutes by a hot plate (Seiei Iuchi, SHAMAL HOTPLATE HHP-401), and further heated at 200 ° C. for 1 hour to sinter silver. A body (about 10 mm × 10 mm × 1 mm) was obtained. The produced silver sintered compact was grind | polished with sandpaper (# 800), and the volume and mass of the silver sintered compact after grinding | polishing were measured. The density of the silver sintered body was calculated from these values, and the density was further calculated according to the following formula.
Density [%] = density of sintered silver [g / cm 3 ] × 100 / theoretical density of silver [10.49 g / cm 3 ]

（４）ダイシェア強度
銀ペーストをＡｇめっきＣｕリードフレーム（ランド部：１０×５ｍｍ）上に０．１ｍｇ塗布し、この上に１ｍｍ×１ｍｍのＡｇめっきＳｉチップ（Ａｇめっき厚：０．１μｍ、チップ厚：４００μｍ）又はＡｕめっきＳｉチップ（Ａｕめっき厚：０．１μｍ、チップ厚：４００μｍ）を接着した。これをホットプレート（井内盛栄堂、ＳＨＡＭＡＬ ＨＯＴＰＬＡＴＥ ＨＨＰ−４０１）で、２００℃で１時間加熱した。得られた銀焼結体の接着強度を、ダイシェア強度［ＭＰａ］により評価した。万能型ボンドテスタ（デイジ社製 ４０００シリーズ）を用い、測定スピード５００μｍ／ｓ、測定高さ１００μｍでＳｉチップを水平方向に押し、銀焼結体のダイシェア強度［ＭＰａ］を測定した。なお、評価結果は、以下の基準に従ってＡ，Ｂ，Ｃを用いて記載する。
（被着体：ＡｇめっきＳｉチップの場合）
Ａ：２０ＭＰａ以上
Ｂ：１０ＭＰａ以上２０ＭＰａ未満
Ｃ：０ＭＰａ以上１０ＭＰａ未満
（被着体：ＡｕめっきＳｉチップの場合）
Ａ：１０ＭＰａ以上
Ｂ：５ＭＰａ以上１０ＭＰａ未満
Ｃ：０ＭＰａ以上５ＭＰａ未満 (4) Die shear strength 0.1 mg of silver paste was applied onto an Ag-plated Cu lead frame (land part: 10 × 5 mm), and 1 mm × 1 mm Ag-plated Si chip (Ag plating thickness: 0.1 μm, chip) (Thickness: 400 μm) or Au-plated Si chip (Au plating thickness: 0.1 μm, chip thickness: 400 μm) was bonded. This was heated at 200 ° C. for 1 hour with a hot plate (Seiei Inai, SHAMAL HOTPLATE HHP-401). The adhesive strength of the obtained silver sintered body was evaluated by die shear strength [MPa]. Using a universal bond tester (4000 series, manufactured by Daisy), the Si chip was pushed in the horizontal direction at a measurement speed of 500 μm / s and a measurement height of 100 μm, and the die shear strength [MPa] of the silver sintered body was measured. The evaluation results are described using A, B, and C according to the following criteria.
(Adherent: Ag-plated Si chip)
A: 20 MPa or more B: 10 MPa or more and less than 20 MPa C: 0 MPa or more and less than 10 MPa (Substrate: Au-plated Si chip)
A: 10 MPa or more B: 5 MPa or more and less than 10 MPa C: 0 MPa or more and less than 5 MPa

（５）熱伝導率
銀ペーストをホットプレート（井内盛栄堂、ＳＨＡＭＡＬ ＨＯＴＰＬＡＴＥ ＨＨＰ−４０１）により１１０℃で１０分間予熱し、更に２００℃で１時間加熱することで銀焼結体（約１０ｍｍ×１０ｍｍ×１ｍｍ）を得た。この銀焼結体の熱拡散率をレーザーフラッシュ法（ネッチ、ＬＦＡ ４４７、測定温度２５℃）で測定し、更にこの熱拡散率と、示差走査熱量測定装置（パーキンエルマー、Ｐｙｒｉｓ１）で得られた比熱容量と焼結密度の積より、２５℃における銀焼結体の熱伝導率［Ｗ／ｍ・Ｋ］を算出した。なお、評価結果は、以下の基準に従ってＡ，Ｂ，Ｃを用いて記載する。
Ａ：１００Ｗ／ｍ・Ｋ以上
Ｂ：８０Ｗ／ｍ・Ｋ以上１００Ｗ／ｍ・Ｋ未満
Ｃ：０Ｗ／ｍ・Ｋ以上８０Ｗ／ｍ・Ｋ未満 (5) Thermal conductivity The silver paste is preheated at 110 ° C. for 10 minutes with a hot plate (Seiei Iuchi, SHAMAL HOTPLATE HHP-401), and further heated at 200 ° C. for 1 hour to obtain a silver sintered body (about 10 mm × 10 mm). × 1 mm) was obtained. The thermal diffusivity of this silver sintered body was measured by a laser flash method (Netch, LFA 447, measurement temperature 25 ° C.), and further obtained by this thermal diffusivity and a differential scanning calorimeter (Perkin Elmer, Pyris 1). From the product of specific heat capacity and sintering density, the thermal conductivity [W / m · K] of the silver sintered body at 25 ° C. was calculated. The evaluation results are described using A, B, and C according to the following criteria.
A: 100 W / m · K or more B: 80 W / m · K or more and less than 100 W / m · K C: 0 W / m · K or more and less than 80 W / m · K

（６）体積抵抗率
銀ペーストをガラス板上に塗布し、ホットプレート（井内盛栄堂、ＳＨＡＭＡＬ ＨＯＴＰＬＡＴＥ ＨＨＰ−４０１）により１１０℃で１０分間予熱し、更に２００℃で１時間加熱することで、ガラス板上に１×５０×０．０３ｍｍの銀焼結体を得た。この銀焼結体を４端子法（アドバンテスト株式会社、Ｒ６８７Ｅ ＤＩＧＴＡＬ ＭＵＬＴＩＭＥＴＥＲ）にて体積抵抗率［μΩ・ｃｍ］を測定した。なお、評価結果は、以下の基準に従ってＡ，Ｂ，Ｃを用いて記載する。
Ａ：０μΩ・ｃｍ以上５．５μΩ・ｃｍ未満
Ｂ：５．５μΩ・ｃｍ以上６．５μΩ・ｃｍ未満
Ｃ：６．５μΩ・ｃｍ以上 (6) Volume resistivity A silver paste is coated on a glass plate, preheated at 110 ° C. for 10 minutes with a hot plate (Seihei Inai, SHAMAL HOTPLATE HHP-401), and further heated at 200 ° C. for 1 hour. A 1 × 50 × 0.03 mm silver sintered body was obtained on the plate. The volume resistivity [μΩ · cm] of this silver sintered body was measured by a four-terminal method (Advantest Corporation, R687E DIGITAL MULTITIMER). The evaluation results are described using A, B, and C according to the following criteria.
A: 0 μΩ · cm or more and less than 5.5 μΩ · cm B: 5.5 μΩ · cm or more and less than 6.5 μΩ · cm C: 6.5 μΩ · cm or more

（７）銀焼結体の断面観察
銀ペーストをＡｇめっきＣｕリードフレーム（ランド部：１０×５ｍｍ、Ａｇめっき厚：約４μｍ）上に０．１ｍｇを塗布し、この上に１ｍｍ×１ｍｍのＡｕめっきＳｉチップ（Ａｕめっき厚：０．１μｍ、チップ厚：４００μｍ）を接着した。これをホットプレート（井内盛栄堂、ＳＨＡＭＡＬ ＨＯＴＰＬＡＴＥ ＨＨＰ−４０１）を用い２００℃で１時間加熱した。接続したサンプルをエポキシ樹脂中に埋め込み、ＡｕめっきＳｉチップ／銀焼結体／ＡｇめっきＣｕリードフレームの断面が確認できるまで研磨した。研磨後のサンプルにイオンスパッター装置（日立ハイテクノロジーズ株式会社、Ｅ１０４５）で白金を蒸着し、これを卓上走査電子顕微鏡（日本電子株式会社、ＮｅｏＳｃｏｐｅ ＪＣＭ−５０００）により、電子加速電圧１０ｋＶ、倍率５０００倍で観察し、ＳＥＭ写真を撮影した。 (7) Cross-sectional observation of silver sintered body Apply 0.1 mg of silver paste on Ag-plated Cu lead frame (land part: 10 × 5 mm, Ag plating thickness: about 4 μm), and 1 mm × 1 mm Au A plated Si chip (Au plating thickness: 0.1 μm, chip thickness: 400 μm) was adhered. This was heated at 200 ° C. for 1 hour using a hot plate (Seiei Iuchi, SHAMAL HOTPLATE HHP-401). The connected sample was embedded in an epoxy resin and polished until the cross section of the Au plated Si chip / silver sintered body / Ag plated Cu lead frame could be confirmed. Platinum was vapor-deposited on the polished sample with an ion sputtering apparatus (Hitachi High-Technologies Corporation, E1045), and this was scanned with a desktop scanning electron microscope (JEOL Ltd., NeoScope JCM-5000) with an electron acceleration voltage of 10 kV and a magnification of 5000 times. And SEM photographs were taken.

実施例１〜２２及び比較例１〜４では、以下のとおり銀ペーストを作製した。なお、各実施例及び比較例で使用した銀粒子（ＬＭ１（トクセン工業株式会社）、ＡｇＣ２３９（福田金属箔株式会社）、ＡｇＣ２１２Ｄ（福田金属箔株式会社）、ＴＣ−２０Ｅ−Ｌ（株式会社徳力化学研究所）、ＡｇＳ０５０（株式会社徳力化学研究所）、Ｃ−３４（株式会社徳力化学研究所））の性状を表１に示す。また、ＬＭ１、ＡｇＣ２３９、ＡｇＣ２１２Ｄ、ＴＣ−２０Ｅ−ＬのＳＥＭ写真を、それぞれ図１，２，３，４に示す。また、実施例１〜２２及び比較例１〜４における銀粒子及びその他の粒子（銀以外の粒子）の種類及び配合量を表２に示す。   In Examples 1-22 and Comparative Examples 1-4, the silver paste was produced as follows. In addition, the silver particles (LM1 (Tokusen Kogyo Co., Ltd.), AgC239 (Fukuda Metal Foil Co., Ltd.), AgC212D (Fukuda Metal Foil Co., Ltd.), TC-20E-L (Tokuriki Chemical Co., Ltd.) used in each Example and Comparative Example Research Institute), AgS050 (Tokuroku Chemical Laboratory Co., Ltd.), C-34 (Tokuriku Chemical Laboratory Co., Ltd.)) are shown in Table 1. In addition, SEM photographs of LM1, AgC239, AgC212D, and TC-20E-L are shown in FIGS. Table 2 shows the types and amounts of silver particles and other particles (particles other than silver) in Examples 1 to 22 and Comparative Examples 1 to 4.

（実施例１）
銀粒子としてＬＭ１（トクセン工業株式会社）７５質量部及びＡｇＣ２３９（福田金属箔株式会社）２５質量部、溶剤としてテルピネオール（和光純薬株式会社、異性体混合物）１３．６質量部、添加剤としてステアリン酸（新日本理化株式会社）１質量部を使用した。銀粒子、溶剤、及び添加剤をらいかい機にて１５分間混練し銀ペーストを作製した。この銀ペーストの特性を表３に示す。また、上記（７）に従って作製したＡｕめっきＳｉチップ／銀焼結体／ＡｇめっきＣｕリードフレームにおけるＡｕめっきＳｉチップと銀焼結体との接続部の断面を撮影したＳＥＭ写真を図５に示す。 Example 1
75 parts by mass of LM1 (Tokusen Kogyo Co., Ltd.) and 25 parts by mass of AgC239 (Fukuda Metal Foil Co., Ltd.) as silver particles, 13.6 parts by mass of terpineol (Wako Pure Chemical Industries, Ltd., isomer mixture), stearin as additive 1 part by mass of acid (New Nippon Rika Co., Ltd.) was used. The silver particles, the solvent, and the additive were kneaded for 15 minutes with a screening machine to prepare a silver paste. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image | photographed the cross section of the connection part of the Au plating Si chip and silver sintered compact in Au plating Si chip / silver sintered compact / Ag plating Cu lead frame produced according to said (7) is shown in FIG. .

（実施例２）
銀粒子としてＬＭ１とＡｇＣ２３９とを表２に示す割合で混合して使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。また、上記（７）に従って作製したＡｕめっきＳｉチップ／銀焼結体／ＡｇめっきＣｕリードフレームにおけるＡｕめっきＳｉチップと銀焼結体との接続部の断面を撮影したＳＥＭ写真を図６に示す。 (Example 2)
A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC239 were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image | photographed the cross section of the connection part of Au plating Si chip and silver sintered compact in Au plating Si chip / silver sintered compact / Ag plating Cu lead frame produced according to said (7) is shown in FIG. .

（実施例３）
銀粒子としてＬＭ１とＡｇＣ２３９とを表２に示す割合で混合して使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。また、上記（７）に従って作製したＡｕめっきＳｉチップ／銀焼結体／ＡｇめっきＣｕリードフレームにおけるＡｕめっきＳｉチップと銀焼結体との接続部の断面を撮影したＳＥＭ写真を図７に示す。 (Example 3)
A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC239 were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image | photographed the cross section of the connection part of the Au plating Si chip and silver sintered compact in Au plating Si chip / silver sintered compact / Ag plating Cu lead frame produced according to said (7) is shown in FIG. .

（実施例４）
Ａｌ粒子（Ａｌｆａ Ａｅｓｅｒ）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 Example 4
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Al particles (Alfa Aeser) was further added. The properties of this silver paste are shown in Table 3.

（実施例５）
Ｓｉ粒子（株式会社高純度化学研究所）１質量部を使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 5)
A silver paste was prepared in the same procedure as in Example 1, except that 1 part by mass of Si particles (High Purity Chemical Research Laboratory) was used. The properties of this silver paste are shown in Table 3.

（実施例６）
Ｔｉ粒子（和光純薬株式会社）１質量部以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 6)
A silver paste was prepared in the same procedure as in Example 1 except for 1 part by mass of Ti particles (Wako Pure Chemical Industries, Ltd.). The properties of this silver paste are shown in Table 3.

（実施例７）
Ｖ粒子（和光純薬株式会社）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 7)
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of V particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.

（実施例８）
Ｍｎ粒子（和光純薬株式会社）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 8)
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Mn particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.

（実施例９）
Ｆｅ粒子（和光純薬株式会社）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 Example 9
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Fe particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.

（実施例１０）
Ｃｏ粒子（和光純薬株式会社）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 10)
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Co particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.

（実施例１１）
Ｎｉ粒子（ＭＥＴＡＬ ＦＯＩＬ ＆ ＰＯＷＤＥＲＳ ＭＦＧ ＣＯ．、Ｎｉ−ＨＷＱ）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 11)
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Ni particles (METAL FOIL & POWDERS MFG CO., Ni-HWQ) was further added. The properties of this silver paste are shown in Table 3.

（実施例１２）
Ｚｎ粒子（Ａｌｆａ Ａｅｓｅｒ）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 Example 12
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Zn particles (Alfa Aeser) was further added. The properties of this silver paste are shown in Table 3.

（実施例１３）
Ｐｄ粒子（Ａｌｆａ Ａｅｓｅｒ）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 13)
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Pd particles (Alfa Aeser) was further added. The properties of this silver paste are shown in Table 3.

（実施例１４）
Ｉｎ粒子（和光純薬株式会社）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 14)
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of In particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.

（実施例１５）
Ｓｎ粒子（和光純薬株式会社）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 15)
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Sn particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.

（実施例１６）
Ｓｂ粒子（和光純薬株式会社）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 16)
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Sb particles (Wako Pure Chemical Industries, Ltd.) was further added. The properties of this silver paste are shown in Table 3.

（実施例１７）
ＡｇめっきＣｕ粒子（福田金属箔株式会社）１質量部を更に添加した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 17)
A silver paste was prepared in the same procedure as in Example 1 except that 1 part by mass of Ag-plated Cu particles (Fukuda Metal Foil Co., Ltd.) was further added. The properties of this silver paste are shown in Table 3.

（実施例１８）
銀粒子としてＬＭ１とＡｇＣ２１２Ｄとを表２に示す割合で混合して使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 18)
A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC212D were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3.

（実施例１９）
銀粒子としてＬＭ１とＡｇＣ２１２Ｄとを表２に示す割合で混合して使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 19)
A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC212D were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3.

（実施例２０）
銀粒子としてＬＭ１とＡｇＣ２１２Ｄとを表２に示す割合で混合して使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 20)
A silver paste was prepared in the same procedure as in Example 1, except that LM1 and AgC212D were mixed and used as silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3.

（実施例２１）
銀粒子としてＬＭ１とＡｇＣ２３９とＡｇＳ０５０とを表２に示す割合で混合して使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 21)
A silver paste was prepared in the same procedure as in Example 1 except that LM1, AgC239, and AgS050 were mixed and used as silver particles in the proportions shown in Table 2. The properties of this silver paste are shown in Table 3.

（実施例２２）
銀粒子としてＬＭ１とＡｇＣ２３９とＣ−３４とを表２に示す割合で混合して使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。 (Example 22)
A silver paste was prepared in the same procedure as in Example 1 except that LM1, AgC239, and C-34 were mixed and used as the silver particles in the ratio shown in Table 2. The properties of this silver paste are shown in Table 3.

（比較例１）
銀粒子としてＡｇＣ２３９のみを１００質量部使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。また、上記（７）に従って作製したＡｕめっきＳｉチップ／銀焼結体／ＡｇめっきＣｕリードフレームにおけるＡｕめっきＳｉチップと銀焼結体との接続部の断面を撮影したＳＥＭ写真を図８に示す。 (Comparative Example 1)
A silver paste was prepared in the same procedure as in Example 1 except that 100 parts by mass of AgC239 alone was used as the silver particles. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image | photographed the cross section of the connection part of the Au plating Si chip and silver sintered compact in Au plating Si chip / silver sintered compact / Ag plating Cu lead frame produced according to said (7) is shown in FIG. .

（比較例２）
銀粒子としてＡｇＣ２１２Ｄ（福田金属箔株式会社）のみを１００質量部使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。また、上記（７）に従って作製したＡｕめっきＳｉチップ／銀焼結体／ＡｇめっきＣｕリードフレームにおけるＡｕめっきＳｉチップと銀焼結体との接続部の断面を撮影したＳＥＭ写真を図９に示す。 (Comparative Example 2)
A silver paste was prepared in the same procedure as in Example 1 except that 100 parts by mass of AgC212D (Fukuda Metal Foil Co., Ltd.) alone was used as the silver particles. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image | photographed the cross section of the connection part of the Au plating Si chip and silver sintered compact in Au plating Si chip / silver sintered compact / Ag plating Cu lead frame produced according to said (7) is shown in FIG. .

（比較例３）
銀粒子としてＴＣ−２０Ｅ−Ｌ（株式会社徳力化学研究所）のみを１００質量部使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。また、上記（７）に従って作製したＡｕめっきＳｉチップ／銀焼結体／ＡｇめっきＣｕリードフレームにおけるＡｕめっきＳｉチップと銀焼結体との接続部の断面を撮影したＳＥＭ写真を図１０に示す。 (Comparative Example 3)
A silver paste was prepared in the same procedure as in Example 1 except that 100 parts by mass of TC-20E-L (Tokuriki Chemical Laboratory Co., Ltd.) was used as the silver particles. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image | photographed the cross section of the connection part of the Au plating Si chip and silver sintered compact in Au plating Si chip / silver sintered compact / Ag plating Cu lead frame produced according to said (7) is shown in FIG. .

（比較例４）
銀粒子としてＬＭ１のみを１００質量部使用した以外は、実施例１と同様の手順で銀ペーストを作製した。この銀ペーストの特性を表３に示す。また、上記（７）に従って作製したＡｕめっきＳｉチップ／銀焼結体／ＡｇめっきＣｕリードフレームにおけるＡｕめっきＳｉチップと銀焼結体との接続部の断面を撮影したＳＥＭ写真を図１１に示す。 (Comparative Example 4)
A silver paste was prepared in the same procedure as in Example 1 except that 100 parts by mass of LM1 alone was used as the silver particles. The properties of this silver paste are shown in Table 3. Moreover, the SEM photograph which image | photographed the cross section of the connection part of the Au plating Si chip and silver sintered compact in Au plating Si chip / silver sintered compact / Ag plating Cu lead frame produced according to said (7) is shown in FIG. .

１…半導体素子、２ａ，２ｂ，２ｃ…リードフレーム、３…銀ペーストの焼結体、４…ワイヤ、５…モールドレジン、６…基板、７…リードフレーム、８…ＬＥＤチップ、９…透光性樹脂、１０，２０…半導体装置。   DESCRIPTION OF SYMBOLS 1 ... Semiconductor element, 2a, 2b, 2c ... Lead frame, 3 ... Silver paste sintered body, 4 ... Wire, 5 ... Mold resin, 6 ... Substrate, 7 ... Lead frame, 8 ... LED chip, 9 ... Translucent Resin, 10, 20... Semiconductor device.

Claims (9)

中心線平均表面粗さＲａが１ｎｍ以下である板状の銀粒子と、
中心線平均表面粗さＲａが２ｎｍ〜２０ｎｍであり、かつ粒子径が１μｍ〜２０μｍである銀粒子と、
溶剤と、
を含有する、銀ペースト。 Plate-like silver particles having a center line average surface roughness Ra of 1 nm or less;
Silver particles having a center line average surface roughness Ra of 2 nm to 20 nm and a particle diameter of 1 μm to 20 μm;
Solvent,
Containing silver paste. 前記板状の銀粒子の中心線平均表面粗さＲａが０．５ｎｍ以下である、請求項１に記載の銀ペースト。   The silver paste of Claim 1 whose centerline average surface roughness Ra of the said plate-shaped silver particle is 0.5 nm or less. 前記板状の銀粒子が単結晶である、請求項１又は２に記載の銀ペースト。   The silver paste according to claim 1 or 2, wherein the plate-like silver particles are single crystals. 前記板状の銀粒子における厚み方向の最大長さａと面方向の最大長さｂとの比が、２≦ｂ／ａを満たす、請求項１〜３のいずれか一項に記載の銀ペースト。   The silver paste as described in any one of Claims 1-3 in which ratio of the maximum length a of the thickness direction in the said plate-shaped silver particle and the maximum length b of a surface direction satisfy | fills 2 <= b / a. . 前記板状の銀粒子における厚み方向の最大長さａ及び面方向の最大長さｂが、それぞれａ≦５００ｎｍ及び１００ｎｍ≦ｂ≦１００００ｎｍを満たす、請求項１〜４のいずれか一項に記載の銀ペースト。   5. The maximum length a in the thickness direction and the maximum length b in the plane direction of the plate-like silver particles satisfy a ≦ 500 nm and 100 nm ≦ b ≦ 10000 nm, respectively. Silver paste. 前記粒子径が１μｍ〜２０μｍである銀粒子の含有量が、銀粒子全量基準で８０質量％以下である、請求項１〜５のいずれか一項に記載の銀ペースト。   The silver paste as described in any one of Claims 1-5 whose content of the silver particle whose said particle diameter is 1 micrometer-20 micrometers is 80 mass% or less on the basis of the total amount of silver particles. 粒子径が０．０１μｍ以上１μｍ未満である球状の銀粒子を更に含有する、請求項１〜６のいずれか一項に記載の銀ペースト。   The silver paste as described in any one of Claims 1-6 which further contains the spherical silver particle whose particle diameter is 0.01 micrometer or more and less than 1 micrometer. Ｍｇ、Ａｌ、Ｓｉ、Ｓｃ、Ｔｉ、Ｖ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ、Ｇａ、Ｇｅ、Ｙ、Ｚｒ、Ｎｂ、Ｍｏ、Ｔｃ、Ｒｕ、Ｒｈ、Ｐｄ、Ｃｄ、Ｉｎ、Ｓｎ、Ｓｂ、Ｔａ、Ｗ、Ｒｅ、Ｏｓ、Ｉｒ、Ｐｔ、Ａｕ、及びＢｉからなる群より選ばれる少なくとも１種を含む金属又は半金属粒子を、銀ペースト全量基準で０．０１〜５．０質量％含有する、請求項１〜７のいずれか一項に記載の銀ペースト。   Mg, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Metal or metalloid particles containing at least one selected from the group consisting of Sn, Sb, Ta, W, Re, Os, Ir, Pt, Au, and Bi are added in an amount of 0.01 to 5.0 based on the total amount of silver paste. The silver paste as described in any one of Claims 1-7 containing the mass%. 請求項１〜８のいずれか一項に記載の銀ペーストを焼結してなる焼結体を介して、半導体素子と半導体素子搭載用支持部材とが互いに接着した構造を有する、半導体装置。   A semiconductor device having a structure in which a semiconductor element and a semiconductor element mounting support member are bonded to each other through a sintered body formed by sintering the silver paste according to claim 1.
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