JP2019078825A - 電気光学装置および電子機器 - Google Patents
電気光学装置および電子機器 Download PDFInfo
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- JP2019078825A JP2019078825A JP2017204206A JP2017204206A JP2019078825A JP 2019078825 A JP2019078825 A JP 2019078825A JP 2017204206 A JP2017204206 A JP 2017204206A JP 2017204206 A JP2017204206 A JP 2017204206A JP 2019078825 A JP2019078825 A JP 2019078825A
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- electrode
- capacitance
- interlayer insulating
- insulating film
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 35
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
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- 229910052782 aluminium Inorganic materials 0.000 description 5
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
Description
図1は、本発明を適用した電気光学装置100の平面図である。図2は、図1に示す電気光学装置100の断面図である。図1および図2に示すように、電気光学装置100では、一方側基板10と他方側基板20とが所定の隙間を介してシール材107によって貼り合わされており、一方側基板10と他方側基板20とが対向している。シール材107は他方側基板20の外縁に沿うように枠状に設けられており、一方側基板10と他方側基板20との間でシール材107によって囲まれた領域に液晶層等の電気光学層80が配置されている。従って、電気光学装置100は液晶装置として構成されている。シール材107は、光硬化性を備えた接着剤、あるいは光硬化性および熱硬化性を備えた接着剤であり、両基板間の距離を所定値とするためのグラスファイバー、あるいはガラスビーズ等のギャップ材が配合されている。一方側基板10および他方側基板20はいずれも四角形であり、電気光学装置100の略中央には、表示領域10aが四角形の領域として設けられている。かかる形状に対応して、シール材107も略四角形に設けられ、シール材107の内周縁と表示領域10aの外周縁との間には、矩形枠状の周辺領域10bが設けられている。
図3は、図1に示す電気光学装置100の電気的構成を示すブロック図である。図3において、電気光学装置100は、VAモードの液晶パネル100pを備えており、液晶パネル100pは、その中央領域に複数の画素100aがマトリクス状に配列された表示領域10aを備えている。液晶パネル100pにおいて、図1および図2等を参照して説明した一方側基板10では、表示領域10aの内側には、第1方向Xに延在する複数の走査線3aと、第2方向Yに延在する複数のデータ線6aとが形成されており、複数の走査線3aと複数のデータ線6aとの各交差に対応して複数の画素100aが構成されている。複数の走査線3aは、走査線駆動回路104に電気的に接続され、複数のデータ線6aは、データ線駆動回路101に接続されている。また、複数本のデータ線6aには、第2方向Yにおいてデータ線駆動回路101とは反対側で検査回路105が電気的に接続している。
図4は、図1に示す電気光学装置100において隣り合う複数の画素の平面図である。図5は、図1に示す電気光学装置100のF−F′断面図であり、データ線6aに沿って切断したときの断面図である。図6は、図1に示す電気光学装置100のG−G′断面図であり、走査線3aに沿って切断したときの断面図である。なお、図6では、画素電極9aに対するコンタクトホール17dを通る位置で切断した様子を示してある。なお、図4および後述する図7〜図13では、各層を以下の線で表してある。また、図4および図7〜図13では、互いの端部が平面視で重なり合う層については、層の形状等が分かりやすいように、端部の位置をずらしてある。
第2走査線33a=太い破線
半導体層1a=細くて短い点線
第1走査線32a=太さが中位の実線
ゲート電極31a=太い実線
第1容量線51a、ソース電極51s、ドレイン電極51d=太い一点鎖線
第1容量電極41a=細い実線
第2容量電極43a=細い二点鎖線
データ線6a、中継電極6b=細い一点鎖線
第2容量線52a=細くて長い破線
第3容量電極71a=中位の太さの実線
第4容量電極73a=太い二点鎖線
画素電極9a=太くて短い点線
コンタクトホール=実線
第1層間絶縁膜=層間絶縁膜12
第2層間絶縁膜=層間絶縁膜13
第3層間絶縁膜=層間絶縁膜16
第4層間絶縁膜=層間絶縁膜11
第5層間絶縁膜=層間絶縁膜121
第6層間絶縁膜=層間絶縁膜122
図5および図6を参照するとともに、以下の図7〜図13を適宜、参照して、一方側基板10の詳細構成を説明する。図7は、図5および図6に示す走査線3a、半導体層1a、およびゲート電極31a等の平面図である。図8は、図5および図6に示す第1容量線51a、ソース電極51sおよびドレイン電極51d等の平面図である。図9は、図5および図6に示す第1容量電極41aおよび第2容量電極43a等の平面図である。図10は、図5および図6に示すデータ線6aおよび中継電極6b等の平面図である。図11は、図5および図6に示す第2容量線52a、第3容量電極71aおよび第4容量電極73a等の平面図である。図12は、図5および図6に示す画素電極9a等の平面図である。図13は、図5および図6に示す第2走査線33a等の平面図である。なお、図7〜図12には、それらの図に示す電極等の電気的な接続に関連するコンタクトホールを示すとともに、基準となる位置を示すために半導体層1aを示してある。
以上説明したように、本形態の電気光学装置100において、第1保持容量551は、層間絶縁膜13(第2層間絶縁膜)に形成された第1凹部44aの底部や内壁等で重なる第1容量電極41a、第1誘電体層42a、および第2容量電極43aによって構成されているため、占有する平面積が狭い場合でも、大きな静電容量を有している。かかる構成の場合、層間絶縁膜13(第2層間絶縁膜)については、第1凹部44aの内壁を第1保持容量551の形成に利用するため、ある程度、厚くする必要がある。このため、層間絶縁膜12(第1層間絶縁膜)については、膜厚を薄くする必要があるが、層間絶縁膜12の画素電極9a側の面に形成されているのは、第1容量線51aであり、ドレイン電位が印加される第2容量電極43aとゲート電極31aとの間、およびドレイン電位が印加される第2容量電極43aと第1走査線32aとの間は、第1容量線51aによってシールドされている。従って、ゲートとドレインとの電気的なカップリングの発生を抑制することができる。
上記実施形態では、第1走査線32aと第2走査線33aとが冗長配線を構成していたが、第1走査線32aおよび第2走査線33aの一方のみが形成されている場合に本発明を適用してもよい。また、第1走査線32aとゲート電極31aとが別の層に形成されていたが、ゲート電極31aが第1走査線32aの一部からなる場合に本発明を適用してもよい。上記実施形態では、第1保持容量551および第2保持容量552が形成されていたが、第1保持容量551のみが形成されている場合に本発明を適用してもよい。上記実施形態では、他方側基板20側から光源光が入射する場合を例示したが、一方側基板10側から光源光が入射する場合に本発明を適用してもよい。
上述した実施形態に係る電気光学装置100を用いた電子機器について説明する。図14は、本発明を適用した電気光学装置100を用いた投射型表示装置(電子機器)の概略構成図である。図7に示す投射型表示装置2100は、電気光学装置100を用いた電子機器の一例である。投射型表示装置2100において、電気光学装置100がライトバルブとして用いられ、装置を大きくすることなく高精細で明るい表示が可能である。この図に示されるように、投射型表示装置2100の内部には、ハロゲンランプ等の白色光源を有するランプユニット2102(光源部)が設けられている。ランプユニット2102から射出された投射光は、内部に配置された3枚のミラー2106および2枚のダイクロイックミラー2108によってR(赤)色、G(緑)色、B(青)色の3原色に分離される。分離された投射光は、各原色に対応するライトバルブ100R、100Gおよび100Bにそれぞれ導かれ、変調される。なお、B色の光は、他のR色やG色と比較すると光路が長いので、その損失を防ぐために、入射レンズ2122、リレーレンズ2123および出射レンズ2124を有するリレーレンズ系2121を介して導かれる。
なお、投射型表示装置については、光源部として、各色の光を出射するLED光源等を用い、かかるLED光源から出射された色光を各々、別の液晶装置に供給するように構成してもよい。
本発明を適用した電気光学装置100を備えた電子機器は、上記実施形態の投射型表示装置2100に限定されない。例えば、投射型のHUD(ヘッドアップディスプレイ)や直視型のHMD(ヘッドマウントディスプレイ)、パーソナルコンピューター、デジタルスチルカメラ、液晶テレビ等の電子機器に用いてもよい。
上述した実施形態に係る電気光学装置100を用いた電子機器について説明する。図14は、本発明を適用した電気光学装置100を用いた投射型表示装置(電子機器)の概略構成図である。図14に示す投射型表示装置2100は、電気光学装置100を用いた電子機器の一例である。投射型表示装置2100において、電気光学装置100がライトバルブとして用いられ、装置を大きくすることなく高精細で明るい表示が可能である。この図に示されるように、投射型表示装置2100の内部には、ハロゲンランプ等の白色光源を有するランプユニット2102(光源部)が設けられている。ランプユニット2102から射出された投射光は、内部に配置された3枚のミラー2106および2枚のダイクロイックミラー2108によってR(赤)色、G(緑)色、B(青)色の3原色に分離される。分離された投射光は、各原色に対応するライトバルブ100R、100Gおよび100Bにそれぞれ導かれ、変調される。なお、B色の光は、他のR色やG色と比較すると光路が長いので、その損失を防ぐために、入射レンズ2122、リレーレンズ2123および出射レンズ2124を有するリレーレンズ系2121を介して導かれる。
Claims (9)
- 第1基板の一方面側に画素電極が設けられた一方側基板と、前記一方側基板に対向する第2基板の前記一方側基板側の面に共通電位が印加される共通電極が設けられた他方側基板と、前記一方側基板と前記他方側基板との間に設けられた電気光学層と、を有し、
前記一方側基板は、
前記第1基板と前記画素電極との間に設けられた半導体層、前記半導体層に対して前記画素電極側に設けられたゲート電極、前記画素電極と前記半導体層との間に設けられ、前記半導体層のソース領域に電気的に接続されたソース電極、および前記画素電極と前記半導体層との間に設けられ、前記半導体層のドレイン領域に電気的に接続されたドレイン電極を備えた画素トランジスターと、
第1方向に延在し、前記ゲート電極に電気的に接続する第1走査線と、
前記半導体層と前記画素電極との間で前記第1方向に対して交差する第2方向に延在し、前記ソース電極に電気的に接続するデータ線と、
前記ゲート電極を前記画素電極側から覆う第1層間絶縁膜と、
前記第1層間絶縁膜の前記画素電極側の面で前記ゲート電極に平面視で重なるように延在し、前記共通電位が印加される第1容量線と、
前記第1容量線を前記画素電極側から覆い、前記第1容量線と平面視で重なる第1凹部が形成された第2層間絶縁膜と、
前記第1凹部の底部から前記第2層間絶縁膜の前記画素電極側の面まで設けられ、前記第1凹部の底部で前記第1容量線に電気的に接続された第1容量電極と、
前記第1容量電極に前記画素電極側から重なり、前記ドレイン電極および前記画素電極に電気的に接続された第2容量電極と、
前記第1容量電極と前記第2容量電極との間に設けられ、前記第1容量電極および前記第2容量電極と第1保持容量を構成する第1誘電体層と、
を有することを特徴とする電気光学装置。 - 請求項1に記載の電気光学装置において、
前記ソース電極および前記ドレイン電極は、前記第1層間絶縁膜の前記画素電極側の面に前記第1容量線と同一の導電層によって構成されていることを特徴とする電気光学装置。 - 請求項1または2に記載の電気光学装置において、
前記一方側基板は、
前記第2容量電極と前記画素電極との間で延在し、前記共通電位が印加される第2容量線と、
前記第2容量線を前記画素電極側から覆い、前記第2容量線と平面視で重なる第2凹部が形成された第3層間絶縁膜と、
前記第2凹部の底部から前記第3層間絶縁膜の前記画素電極側の面まで設けられ、前記第2凹部の底部で前記第2容量線に電気的に接続された第3容量電極と、
前記第2容量電極に前記画素電極側から重なり、前記ドレイン電極および前記画素電極に電気的に接続された第4容量電極と、
前記第3容量電極と前記第4容量電極との間に設けられ、前記第3容量電極および前記第4容量電極と第2保持容量を構成する第2誘電体層と、
を有することを特徴とする電気光学装置。 - 請求項3に記載の電気光学装置において、
前記第2容量線は、前記データ線と重なるように前記第2方向に延在していることを特徴とする電気光学装置。 - 請求項1から4までの何れか一項に記載の電気光学装置において、
前記第2層間絶縁膜の前記画素電極側の面が平面になっていることを特徴とする電気光学装置。 - 請求項1から5までの何れか一項に記載の電気光学装置において、
前記第1走査線は、前記半導体層と前記第1層間絶縁膜との間で前記第1方向に延在しており、
前記第1容量線は、前記第1走査線に平面視で重なるように前記第1方向に延在していることを特徴とする電気光学装置。 - 請求項6に記載の電気光学装置において、
前記一方側基板は、
前記第1基板と前記半導体層との間で前記第1走査線と重なるように前記第1方向に延在する第2走査線と、
前記半導体層と前記第2走査線との間に設けられた第4層間絶縁膜と、
を有し、
前記第1走査線は、前記第4層間絶縁膜を貫通する第1コンタクトホールを介して前記第2走査線と電気的に接続されていることを特徴とする電気光学装置。 - 請求項1から7までの何れか一項に記載の電気光学装置において、
前記第1層間絶縁膜は、前記半導体層と前記第1容量線との間に設けられた第5層間絶縁膜と、前記第5層間絶縁膜と前記第1容量線との間に設けられた第6層間絶縁膜と、を備え、
前記ゲート電極は、前記第1層間絶縁膜のうち、前記第5層間絶縁膜と前記半導体層との間に設けられ、
前記第1走査線は、前記第1層間絶縁膜のうち、前記第5層間絶縁膜と前記第6層間絶縁膜との間に設けられ、
前記第5層間絶縁膜には、前記第1走査線と前記ゲート電極とを電気的に接続する第2コンタクトホールが形成されていることを特徴とする電気光学装置。 - 請求項1から8までの何れか一項に記載の電気光学装置を備えていることを特徴とする電子機器。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001082273A1 (fr) * | 2000-04-21 | 2001-11-01 | Seiko Epson Corporation | Dispositif electro-optique |
JP2004355028A (ja) * | 2000-08-31 | 2004-12-16 | Seiko Epson Corp | 電気光学装置及び投射型表示装置 |
JP2005202337A (ja) * | 2004-01-19 | 2005-07-28 | Seiko Epson Corp | 電気光学装置及び電子機器 |
CN102064180A (zh) * | 2010-09-26 | 2011-05-18 | 友达光电股份有限公司 | 有源元件、像素结构以及显示面板 |
US20120081649A1 (en) * | 2010-04-16 | 2012-04-05 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and resulting capacitor structure for liquid crystal on silicon display devices |
JP2013073033A (ja) * | 2011-09-28 | 2013-04-22 | Seiko Epson Corp | 電気光学装置、及び電子機器 |
JP3197990U (ja) * | 2015-03-31 | 2015-06-11 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
JP2015203743A (ja) * | 2014-04-14 | 2015-11-16 | セイコーエプソン株式会社 | 電気光学装置、光学ユニット、及び電子機器 |
JP2016218382A (ja) * | 2015-05-26 | 2016-12-22 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6654073B1 (en) * | 1999-09-01 | 2003-11-25 | Nec Lcd Technologies, Ltd. | Liquid crystal display having storage capacitance electrodes and method of fabricating the same |
US6636284B2 (en) | 2000-08-11 | 2003-10-21 | Seiko Epson Corporation | System and method for providing an electro-optical device having light shield layers |
JP2006138960A (ja) * | 2004-11-10 | 2006-06-01 | Nec Corp | 液晶表示装置及びその製造方法並びに投射表示装置 |
JP2008040399A (ja) | 2006-08-10 | 2008-02-21 | Seiko Epson Corp | 電気光学装置用基板及び電気光学装置、並びに電子機器 |
TWI367381B (en) * | 2008-02-01 | 2012-07-01 | Chimei Innolux Corp | Thin film transistor substrate and method of fabricating same |
JP2017058537A (ja) | 2015-09-17 | 2017-03-23 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の製造方法、および電子機器 |
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001082273A1 (fr) * | 2000-04-21 | 2001-11-01 | Seiko Epson Corporation | Dispositif electro-optique |
JP2004355028A (ja) * | 2000-08-31 | 2004-12-16 | Seiko Epson Corp | 電気光学装置及び投射型表示装置 |
JP2005202337A (ja) * | 2004-01-19 | 2005-07-28 | Seiko Epson Corp | 電気光学装置及び電子機器 |
US20120081649A1 (en) * | 2010-04-16 | 2012-04-05 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and resulting capacitor structure for liquid crystal on silicon display devices |
CN102064180A (zh) * | 2010-09-26 | 2011-05-18 | 友达光电股份有限公司 | 有源元件、像素结构以及显示面板 |
JP2013073033A (ja) * | 2011-09-28 | 2013-04-22 | Seiko Epson Corp | 電気光学装置、及び電子機器 |
JP2015203743A (ja) * | 2014-04-14 | 2015-11-16 | セイコーエプソン株式会社 | 電気光学装置、光学ユニット、及び電子機器 |
JP3197990U (ja) * | 2015-03-31 | 2015-06-11 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
JP2016218382A (ja) * | 2015-05-26 | 2016-12-22 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11500251B2 (en) | 2020-06-17 | 2022-11-15 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
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