JP2019071439A - 熱処理チャンバのための支持シリンダー - Google Patents
熱処理チャンバのための支持シリンダー Download PDFInfo
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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Abstract
Description
[0018]図1は、急速熱処理チャンバ10の断面図を概略的に示す。適切なRTPチャンバの例としては、カリフォルニア州サンタクララのApplied Materials,Inc.から入手可能なRADIANCE(登録商標) RTP又はCENTURA(登録商標) RTPチャンバが含まれてもよい。処理チャンバ10は、上部加熱構成(すなわち、基板の比較的上部に加熱ランプが設けられる)を示しているが、本開示の恩恵を受けるため、下部加熱構成(すなわち、基板の比較的下部に加熱ランプが設けられる)を更に利用してもよいと考えられている。基板12、例えば、熱処理されるシリコン基板などの半導体基板は、バルブ又はアクセスポート13を通過し、処理チャンバ10の処理領域18内に入る。基板12は、その外縁上で環状支持リング14によって支持される。端部リップ15は、環状支持リング14の内側に向かって延在し、基板12の裏面の一部に接触する。基板12の前面に既に形成された処理されたフィーチャ16が、透明石英窓20によって上側で画定された処理領域18に向かって上方に面するように、基板が配向されてもよい。基板12の前面は、ランプ26の配列に向かって面する。幾つかの実施形態では、基板12の前面は、その上に形成された処理されたフィーチャとともに、ランプ26の配列から離れる方向に面してもよい(すなわち、パイロメータ40に向かって面する)。概略図とは異なり、フィーチャ16は、ほとんどの場合、基板12の前面を越えて実質的な距離突出しないが、前面の平面の中とその付近にパターンを構成する。
[0024]図2Aは、本開示の一実施形態による、図1の支持シリンダー30の代わりに使用し得る支持シリンダー200の概略上面図である。図2Aに示される支持シリンダー200は、処理チャンバ、例えば、図1に示された急速熱処理チャンバ10の中に配置されてもよい。支持シリンダー200は、概して、実質的に一貫した径方向幅「W」を有する連続リング体である。支持シリンダー200は、内周面202及び内周面202と平行な外周面204を有する。外周面204は、内周面202よりも、支持シリンダー200の中央長手方向軸「C」から更に離れている。ここでは図示されていないが、支持シリンダー200は、図1に関連して以上で説明されたように、外周面204が処理チャンバの内周面の内側に向かって径方向に配置されるように寸法形成される。
Claims (15)
- 熱処理チャンバのための支持シリンダーであって、
内周面及び前記内周面と平行な外周面を有するリング体、並びに
前記外周面から前記内周面へ径方向に延在する平坦面を備え、前記リング体が、不透明石英ガラス材料を含み、且つ前記リング体が、光学的透明層でコーティングされる、支持シリンダー。 - 前記不透明石英ガラス材料が合成黒色石英であり、且つ前記光学的透明層が約1.5の屈折率を有する、請求項1に記載の支持シリンダー。
- 前記光学的透明層が、前記不透明石英ガラス材料と実質的に一致する又は類似する熱膨張係数を有する、請求項1に記載の支持シリンダー。
- 前記光学的透明層が透明溶融石英材料を含む、請求項3に記載の支持シリンダー。
- 前記光学的透明層が前記内周面上にコーティングされる、請求項1に記載の支持シリンダー。
- 前記内周面上に形成された前記光学的透明層が、反射コーティング層によって覆われる、請求項5に記載の支持シリンダー。
- 前記光学的透明層が、約30μmから約200μmの厚みを有する、請求項1に記載の支持シリンダー。
- 前記リング体が、傾斜面部及び曲面部を備え、前記傾斜面部が、前記平坦面を介して前記曲面部に接続する、請求項1に記載の支持シリンダー。
- 前記傾斜面部が、前記内周面に対して約15°から約40°の角度で前記内周面に向かって下方に傾斜する、請求項8に記載の支持シリンダー。
- 熱処理チャンバ内で使用されるリング体を処理する方法であって、
不透明石英ガラス材料を含むリング体上に光学的透明層を形成することであって、前記リング体が、内周面、外周面、及び前記外周面から前記内周面へ径方向に延在する平坦面を有する、形成することと、
約1.5の屈折率を有する光学的透明層で前記リング体の少なくとも一部をコーティングすることと
を含む方法。 - 前記不透明石英ガラス材料が合成黒色石英である、請求項10に記載の方法。
- 前記光学的透明層が、前記不透明石英ガラス材料と実質的に一致する又は類似する熱膨張係数を有する、請求項10に記載の方法。
- 前記光学的透明層が前記内周面上にコーティングされる、請求項10に記載の方法。
- 前記内周面上の前記光学的透明層を覆う反射コーティング層を形成することを更に含む、請求項10に記載の方法。
- 熱処理チャンバ内で基板を処理する方法であって、
前記熱処理チャンバの内周面の内側に向かって径方向にリング体を位置決めすることであって、前記リング体が、不透明石英ガラス材料を含み、且つその上に形成された光学的透明層を有し、前記リング体が、内周面、外周面、及び前記内周面から前記外周面へ径方向に延在する平坦面を有する、位置決めすることと、
前記リング体の前記平坦面によって支持リングを支持することであって、前記支持リングが、半導体基板の外縁を前記半導体基板の裏面から支持するために前記支持リングの表面から径方向内側に延在する端部リップを有する、支持することと
を含む方法。
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US14/298,389 US9385004B2 (en) | 2013-08-15 | 2014-06-06 | Support cylinder for thermal processing chamber |
US14/298,389 | 2014-06-06 |
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SG10201709699RA (en) * | 2013-05-23 | 2017-12-28 | Applied Materials Inc | A coated liner assembly for a semiconductor processing chamber |
US9385004B2 (en) * | 2013-08-15 | 2016-07-05 | Applied Materials, Inc. | Support cylinder for thermal processing chamber |
US9330955B2 (en) * | 2013-12-31 | 2016-05-03 | Applied Materials, Inc. | Support ring with masked edge |
WO2017099919A1 (en) * | 2015-12-07 | 2017-06-15 | Applied Materials, Inc. | Amalgamated cover ring |
TWI838824B (zh) * | 2017-03-06 | 2024-04-11 | 美商應用材料股份有限公司 | 旋轉器蓋 |
US11004704B2 (en) | 2017-03-17 | 2021-05-11 | Applied Materials, Inc. | Finned rotor cover |
CN110071064A (zh) * | 2018-01-22 | 2019-07-30 | 上海新昇半导体科技有限公司 | 一种改善外延片污染印记的方法 |
WO2019177837A1 (en) * | 2018-03-13 | 2019-09-19 | Applied Materials, Inc | Support ring with plasma spray coating |
CN109148353A (zh) * | 2018-08-15 | 2019-01-04 | 深圳市华星光电技术有限公司 | 一种基板承托盘 |
JP7178823B2 (ja) * | 2018-08-17 | 2022-11-28 | 東京応化工業株式会社 | 基板加熱装置および基板処理システム |
DE102019104433A1 (de) * | 2019-02-21 | 2020-08-27 | Aixtron Se | CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur |
JP7461214B2 (ja) * | 2020-05-19 | 2024-04-03 | 株式会社Screenホールディングス | 熱処理装置 |
KR20220040804A (ko) | 2020-09-24 | 2022-03-31 | 삼성전자주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
Citations (7)
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KR20170026647A (ko) | 2017-03-08 |
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CN105453248B (zh) | 2019-12-10 |
US20170263493A1 (en) | 2017-09-14 |
CN107731718B (zh) | 2022-05-17 |
TWI688040B (zh) | 2020-03-11 |
KR101966566B1 (ko) | 2019-04-05 |
CN107342253B (zh) | 2021-12-28 |
CN107731718A (zh) | 2018-02-23 |
CN107342253A (zh) | 2017-11-10 |
KR20160044002A (ko) | 2016-04-22 |
TWI656598B (zh) | 2019-04-11 |
TW201816932A (zh) | 2018-05-01 |
US9659809B2 (en) | 2017-05-23 |
JP2016534558A (ja) | 2016-11-04 |
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JP6688865B2 (ja) | 2020-04-28 |
US20160300752A1 (en) | 2016-10-13 |
CN105453248A (zh) | 2016-03-30 |
US9385004B2 (en) | 2016-07-05 |
US20150050819A1 (en) | 2015-02-19 |
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US10128144B2 (en) | 2018-11-13 |
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