JP2019067951A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2019067951A JP2019067951A JP2017192740A JP2017192740A JP2019067951A JP 2019067951 A JP2019067951 A JP 2019067951A JP 2017192740 A JP2017192740 A JP 2017192740A JP 2017192740 A JP2017192740 A JP 2017192740A JP 2019067951 A JP2019067951 A JP 2019067951A
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- Japan
- Prior art keywords
- metal layer
- insulating substrate
- semiconductor device
- layer
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 206
- 229910052751 metal Inorganic materials 0.000 claims abstract description 209
- 239000002184 metal Substances 0.000 claims abstract description 209
- 239000000758 substrate Substances 0.000 claims abstract description 177
- 230000002093 peripheral effect Effects 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims description 28
- 230000008646 thermal stress Effects 0.000 abstract description 15
- 238000009413 insulation Methods 0.000 abstract description 13
- 239000004020 conductor Substances 0.000 description 34
- 125000006850 spacer group Chemical group 0.000 description 29
- 229910052802 copper Inorganic materials 0.000 description 19
- 239000010949 copper Substances 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 230000017525 heat dissipation Effects 0.000 description 17
- 229910000679 solder Inorganic materials 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 9
- 239000004519 grease Substances 0.000 description 8
- 229910001182 Mo alloy Inorganic materials 0.000 description 7
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 7
- 238000003466 welding Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H—ELECTRICITY
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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Abstract
Description
12:封止体
14、214、314:P端子
15:N端子
16:O端子
18、19:信号端子
20、40、:半導体素子
22、42:上側絶縁基板
24、44:導体スペーサ
26、46、226、326:下側絶縁基板
28、48:上側絶縁基板の絶縁層
30、50:上側絶縁基板の内側金属層
32、52:上側絶縁基板の外側金属層
34、54:下側絶縁基板の絶縁層
34e:下側絶縁基板の絶縁層の外周縁
36、56、236、336:下側絶縁基板の内側金属層
36a、236a、336a:内側金属層の主部
36b、236b、336b:内側金属層の突出部
36c、56c:内側金属層の周側面
38、58:下側絶縁基板の外側金属層
60、260、360:継手
70:冷却器
72:放熱グリス
74:絶縁板
122:共通上側絶縁基板
126:共通下側絶縁基板
128:共通上側絶縁基板の共通絶縁層
130、150:共通上側絶縁基板の第1内側金属層
132:共通上側絶縁基板の共通外側金属層
134:共通下側絶縁基板の共通絶縁層
136、156:共通下側絶縁基板の内側金属層
136a、156a:内側金属層の主部
138:共通下側絶縁基板の共通外側金属層
202、302:U端子
204、304:V端子
206、306:W端子
400:パワーユニット
410:第2の半導体装置
422、426、442、446:放熱板
CA1、CA2:接触面積
CD:沿面距離
CL:空間距離
D1:パワーユニットに採用された本実施例の半導体装置の厚み
D2:パワーユニットに採用された第2の半導体装置の厚み
TH1:下側絶縁基板の内側金属層の厚み
TH2:下側絶縁基板の外側金属層の厚み
WL:溶接による接合箇所
Claims (10)
- 絶縁層の両面に金属層がそれぞれ設けられた絶縁基板と、
前記絶縁基板の一方側の金属層上に実装された半導体素子と、
前記一方側の金属層に接合されているとともに、他方側の金属層とは電気的に絶縁されている外部接続端子と、
を備え、
前記一方側の金属層は、前記絶縁層に接触しながら広がるとともに前記半導体素子が実装された主部と、前記主部から突出するとともに前記外部接続端子が接合された突出部とを有し、
前記突出部の少なくとも一部は、前記絶縁基板を平面視したときに、前記絶縁層の外周縁から突出する、
半導体装置。 - 前記突出部は、前記絶縁層の前記外周縁から離れて位置している、請求項1に記載の半導体装置。
- 前記突出部は、前記主部の周側面から突出している、請求項1又は2に記載の半導体装置。
- 前記突出部は、前記絶縁層と平行な方向に沿って延びている、請求項3に記載の半導体装置。
- 前記突出部の基端と先端との間の少なくとも一部の区間では、前記突出部の断面積が、前記基端に向かうにつれて拡大している、請求項1から4のいずれか一項に記載の半導体装置。
- 前記絶縁層と前記一方側の金属層との間の接触面積よりも、前記絶縁層と前記他方側の金属層との間の接触面積の方が大きい、請求項1から5のいずれか一項に記載の半導体装置。
- 前記絶縁層と前記他方側の金属層との間の接触面積よりも、前記絶縁層と前記一方側の金属層との間の接触面積の方が大きい、請求項1から5のいずれか一項に記載の半導体装置。
- 前記絶縁層と前記一方側の金属層との間の接触面積は、前記絶縁層と前記他方側の金属層との間の接触面積と等しい、請求項1から5のいずれか一項に記載の半導体装置。
- 前記半導体素子を封止する絶縁性の封止体をさらに有し、
前記絶縁基板の前記一方側の金属層は、前記封止体の内部に位置しており、
前記絶縁基板の前記他方側の金属層は、前記封止体の表面に露出している、請求項1から8のいずれか一項に記載の半導体装置。 - 前記絶縁基板は、DBC基板である、請求項1から9のいずれか一項に記載の半導体装置。
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JP2017192740A JP6988345B2 (ja) | 2017-10-02 | 2017-10-02 | 半導体装置 |
RU2018133005A RU2695049C1 (ru) | 2017-10-02 | 2018-09-18 | Полупроводниковое устройство |
US16/139,570 US20190103402A1 (en) | 2017-10-02 | 2018-09-24 | Semiconductor device |
EP18196190.5A EP3467873B1 (en) | 2017-10-02 | 2018-09-24 | Semiconductor device |
KR1020180115215A KR102088390B1 (ko) | 2017-10-02 | 2018-09-27 | 반도체 장치 |
CN201811134621.3A CN109599384B (zh) | 2017-10-02 | 2018-09-28 | 半导体器件 |
TW107134233A TWI676255B (zh) | 2017-10-02 | 2018-09-28 | 半導體裝置 |
BR102018070254-8A BR102018070254B1 (pt) | 2017-10-02 | 2018-10-01 | Dispositivo semicondutor |
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CN111295752A (zh) | 2017-11-20 | 2020-06-16 | 罗姆股份有限公司 | 半导体器件 |
US10861767B2 (en) * | 2018-05-11 | 2020-12-08 | Semiconductor Components Industries, Llc | Package structure with multiple substrates |
JP7069082B2 (ja) * | 2019-05-08 | 2022-05-17 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法 |
DE102022208012A1 (de) | 2022-08-03 | 2023-07-06 | Zf Friedrichshafen Ag | Leistungsmodulpaket |
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US20190103402A1 (en) | 2019-04-04 |
BR102018070254A2 (pt) | 2019-04-16 |
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EP3467873B1 (en) | 2020-04-22 |
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EP3467873A1 (en) | 2019-04-10 |
RU2695049C1 (ru) | 2019-07-18 |
JP6988345B2 (ja) | 2022-01-05 |
TW201916291A (zh) | 2019-04-16 |
KR20190038997A (ko) | 2019-04-10 |
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BR102018070254B1 (pt) | 2023-04-11 |
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