JP2019062129A - Substrate holding member - Google Patents
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Abstract
Description
本発明は、半導体ウエハなど基板を真空吸着保持するために用いられる基板保持部材に関する。 The present invention relates to a substrate holding member used for vacuum suction holding a substrate such as a semiconductor wafer.
ウエハを支持するための鋼球が保持された鋼球保持枠がチャック本体の凹所に装着されたボール接触型ウエハチャック（基板保持部材）において、鋼球を交換可能とする技術が提案されている（特許文献１参照）。チャック本体に設けられた真空通路を介して減圧することによって、鋼球およびチャック本体に設けられたシールリングにおいてウエハを吸着支持している。 In the ball contact type wafer chuck (substrate holding member) in which a steel ball holding frame holding a steel ball for supporting a wafer is mounted in a recess of a chuck body, a technology has been proposed for enabling steel balls to be replaced (See Patent Document 1). By decompressing through a vacuum passage provided in the chuck body, the wafer is adsorbed and supported by the steel ball and the seal ring provided in the chuck body.
しかし、基板保持部材で基板を繰り返し吸着すると基板を支持する支持部材と基板が吸着時に摺動し、支持部材が摩耗する。その結果、吸着される基板の平坦度が悪化し、所定のプロセスが行えなくなる。その場合、真空チャックの表面形状の修正加工が必要になり、真空チャックが取り付けられた基板プロセス用の装置のダウンタイムが長くなり生産性が低下する問題が生じていた。 However, when the substrate is repeatedly adsorbed by the substrate holding member, the support member supporting the substrate and the substrate slide at the time of adsorption, and the support member is abraded. As a result, the flatness of the substrate to be absorbed is deteriorated, and the predetermined process can not be performed. In that case, it is necessary to correct the surface shape of the vacuum chuck, which causes a problem that the down time of the apparatus for substrate processing to which the vacuum chuck is attached is prolonged and the productivity is lowered.
そこで、本発明は、基板を支持する部材のみが容易に交換または補修されることによって、基板の平坦度を確保しうるような吸着保持性能が回復され、かつ、上記のような基板プロセス用の装置におけるダウンタイムの短縮化を図ることができる基板保持部材を提供することを目的とする。 Therefore, according to the present invention, by holding or replacing only the member supporting the substrate easily, the adsorption and holding performance such that the flatness of the substrate can be ensured is recovered, and for the substrate processing as described above. An object of the present invention is to provide a substrate holding member capable of shortening the downtime in the apparatus.
本発明の基板保持部材は、主面を有する基体と、前記基体に設けられ、前記主面において開口する複数の第１開口部を有する１つ以上の第１通気路と、前記基体に設けられ、前記主面において開口する第２開口部を有する第２通気路と、前記複数の第１開口部のそれぞれを少なくとも部分的に塞ぎ、かつ、少なくとも一部が前記主面から突出するように前記基体に対して取り外し可能に配置される複数の支持部材と、を備えていることを特徴とする。 The substrate holding member of the present invention is provided on a base having a main surface, one or more first vents provided on the base and having a plurality of first openings opened on the main surface, and the base A second air passage having a second opening that opens in the main surface, and at least a part of each of the plurality of first openings, and at least a part of which protrudes from the main surface; And a plurality of support members removably disposed relative to the base.
当該構成の基板保持部材によれば、基体の主面において複数の第１開口部のそれぞれを少なくとも部分的に塞ぎ、かつ、少なくとも一部が前記主面から突出するように複数の支持部材が配置される。この状態で、第１通気路が減圧されることにより、複数の支持部材のそれぞれに対して第１開口部を通じて真空吸引力が作用して基体に対して当該複数の支持部材のそれぞれが吸着される。また、基体の主面側に基板が載置されることにより、複数の支持部材のうち少なくとも一部に基板が当接する。この状態で、第２通気路が減圧されることにより、第２開口部を通じて基体の主面および基板の裏面により挟まれた空間が減圧され、基板に対して基体の主面に向かう真空吸引力が作用し、基板が複数の支持部材に支持された状態で基板保持部材に吸着保持される。 According to the substrate holding member of the configuration, the plurality of support members are disposed such that each of the plurality of first openings is at least partially closed in the main surface of the base and at least a portion thereof protrudes from the main surface Be done. In this state, when the first air passage is decompressed, a vacuum suction force is applied to each of the plurality of support members through the first opening, and each of the plurality of support members is attracted to the substrate. Ru. Further, by mounting the substrate on the main surface side of the base, the substrate is in contact with at least a part of the plurality of support members. In this state, the second air passage is depressurized, so that the space between the main surface of the base and the back surface of the substrate is depressurized through the second opening, and the vacuum suction force toward the main surface of the base with respect to the substrate Acts to hold the substrate by suction with the substrate holding member supported by the plurality of support members.
第２通気路が減圧状態から解放される（例えば大気圧に戻される）ことにより、基体の主面および基板の裏面により挟まれた空間も減圧状態から解放され、基板が基板保持部材から取り外される。第１通気路が減圧状態から解放される（例えば大気圧に戻される）ことにより、複数の支持部材のそれぞれが真空吸引力から解放されて基体から取り外し可能となる。このため、複数の支持部材のうち少なくとも一部の支持部材が摩耗または損傷した場合、基板保持部材全体ではなく当該少なくとも一部の支持部材のみが容易に交換または補修等されることによって基板の平坦度が確保されるような吸着保持性能が回復され、かつ、基板に対してプロセスを施すための装置のダウンタイムの短縮化が図られる。 The second vent is released from the reduced pressure state (for example, returned to the atmospheric pressure), so that the space between the main surface of the substrate and the back surface of the substrate is also released from the reduced pressure state, and the substrate is removed from the substrate holding member . By releasing the first air passage from the reduced pressure state (e.g., returning to the atmospheric pressure), each of the plurality of support members is released from the vacuum suction force and can be removed from the substrate. For this reason, when at least a part of the support members among the plurality of support members is worn or damaged, only the at least a part of the support members can be easily replaced or repaired instead of the entire substrate holding member, thereby flattening the substrate. As a result, the adsorption and holding performance is maintained, and the downtime of the apparatus for processing the substrate can be shortened.
前記複数の支持部材のそれぞれが、前記第１開口部に部分的に収容され、かつ、前記第１開口部を画定する前記基体の内側面と前記基体の主面との角部に全周にわたって当接した状態で前記第１開口部を塞いでいることが好ましい。 Each of the plurality of support members is partially accommodated in the first opening and extends over the entire circumference of a corner between the inner surface of the base defining the first opening and the main surface of the base. Preferably, the first opening is closed in a state of being in contact.
当該構成の基板保持部材によれば、第１通気路が減圧されることにより、複数の支持部材のそれぞれに対して第１開口部を通じて真空吸引力が作用して基体に対して吸着された際、各支持部材が第１開口部に部分的に収容された状態で第１開口部を画定する前記基体の内側面と前記基体の主面との角部に全周にわたって当接しているため、横方向への各支持部材の変位が防止され、基体に対する各支持部材の相対的な位置および姿勢がより確実に維持される。 According to the substrate holding member having the above configuration, when the first air passage is decompressed, a vacuum suction force is applied to each of the plurality of support members through the first opening to be attracted to the substrate. Since the respective support members are partially accommodated in the first opening, they are in contact with the entire circumference of the corner between the inner surface of the base defining the first opening and the main surface of the base, The displacement of each support member in the lateral direction is prevented, and the relative position and posture of each support member with respect to the base are more reliably maintained.
前記角部により画定される前記第１開口部の上端縁部が円形であり、前記支持部材が、前記第１開口部の上端縁部よりも大径の球体であることが好ましい。 It is preferable that the upper end edge of the first opening defined by the corner is circular, and the support member is a spherical body having a diameter larger than the upper end edge of the first opening.
当該構成の基板保持部材によれば、第１通気路が減圧状態から解放された際、部分的に摩耗した支持部材が交換されることのほか、球体である支持部材が摩耗したときに支持部材を交換することなく、例えば支持部材の摩耗した部分が横向きになるように回転させることによっても、基体の主面からの支持部材の突出高さを元に戻すことができる。球体の支持部材がその中心回りに回転しても、第１開口部に対する支持部材の相対的な姿勢は変化しないため、支持部材の一部が第１開口部に収容されるように基体に配置する作業の容易化が図られる。 According to the substrate holding member of the configuration, when the first air passage is released from the reduced pressure state, the partially worn supporting member is replaced, and the supporting member, which is a sphere, is worn. The projection height of the support member from the main surface of the base can also be restored by, for example, rotating the worn portion of the support member so as to be sideways without replacing the Since the relative posture of the support member relative to the first opening does not change even if the support member of the sphere rotates about its center, the support member is disposed on the base so that a part of the support member is accommodated in the first opening Can be facilitated.
前記複数の第１開口部のそれぞれが、前記主面より窪んでいる底面により画定される凹部と、前記底面に開口する孔部と、により構成され、前記支持部材は、前記底面に当接して前記孔部を少なくとも部分的に塞いだ状態で前記凹部に一部が収容されることが好ましい。 Each of the plurality of first openings is constituted by a recess defined by a bottom surface recessed from the main surface, and a hole opening in the bottom surface, and the support member is in contact with the bottom surface. It is preferable that a part is accommodated in the recess while the hole is at least partially closed.
当該構成の基板保持部材によれば、第１通気路が減圧されることにより、複数の支持部材のそれぞれに対して第１開口部を構成する孔部を通じて真空吸引力が作用して、複数の支持部材のそれぞれが基体に対して吸着された際、各支持部材が凹部に部分的に収容されているため、横方向への変位が凹部を形成する内側面または側部によって抑制され、基体に対する各支持部材の相対的な位置および姿勢が確実に維持されうる。 According to the substrate holding member having the above configuration, the vacuum suction force acts on each of the plurality of support members through the holes forming the first opening by reducing the pressure of the first air passage. Since each support member is partially accommodated in the recess when each of the support members is attracted to the base, the lateral displacement is suppressed by the inner side surface or side portion forming the recess, and the support member relative to the base is The relative position and attitude of each support member can be reliably maintained.
前記支持部材は、前記凹部を画定する底面に下端面を当接させた状態で前記凹部に少なくとも一部が収容されている下部要素と、前記下部要素の上端面から上方に突出し、前記下部要素の下端面よりも小面積の上端面を有する上部要素と、により構成されていることが好ましい。 The support member projects upward from the upper end surface of the lower element, a lower element of which at least a part is accommodated in the recess with the lower end face in contact with the bottom surface defining the recess, the lower element It is preferable that the upper element has an upper end face smaller in area than the lower end face.
当該構成の基板保持部材によれば、第１通気路が減圧された際に、第１開口部の孔部を通じて、支持部材を構成する下部要素の下端面に対して作用する真空吸引力の増大が図られるので、支持部材の基体に対する位置および姿勢が確実に維持される。これに加えて、支持部材を構成する上部要素の上端面と基板の裏面との接触面積の低減が図られる。 According to the substrate holding member having the configuration, when the first air passage is depressurized, an increase in the vacuum suction force acting on the lower end face of the lower element constituting the support member through the hole of the first opening The position and orientation of the support member relative to the base are reliably maintained. In addition to this, the contact area between the upper end surface of the upper element constituting the support member and the back surface of the substrate can be reduced.
前記複数の凹部のそれぞれが、前記主面より円柱状に窪んだ形状であり、前記支持部材は、円柱状の前記下部要素と、前記下部要素よりも小径の円柱状の前記上部要素と、により構成されていることが好ましい。 Each of the plurality of recesses has a cylindrical shape recessed from the main surface, and the support member includes a cylindrical lower element and a cylindrical upper element having a smaller diameter than the lower element. It is preferable that it is comprised.
当該構成の基板保持部材によれば、支持部材を構成する円柱状の下部要素がその中心軸線回りに回転しても、第１開口部に対する下部要素の相対的な姿勢は変化しないため、支持部材の下部要素の少なくとも一部が第１開口部に収容されるように基体に配置する作業の容易化が図られる。 According to the substrate holding member having the above configuration, the relative posture of the lower element with respect to the first opening does not change even if the cylindrical lower element constituting the support member rotates around its central axis. It is possible to facilitate the operation of arranging on the base so that at least a part of the lower element of the is accommodated in the first opening.
本発明の基板保持部材が、前記基体に設けられ、前記主面において前記複数の第１開口部および前記第２開口部を囲むように環状に延在し、かつ、前記主面から前記複数の支持部材のそれぞれと同じ高さまたは前記主面から前記複数の支持部材のそれぞれよりも低い高さで突出する環状凸部をさらに備えていることが好ましい。 The substrate holding member according to the present invention is provided on the base, and extends annularly to surround the plurality of first openings and the second openings on the main surface, and from the main surface to the plurality of substrates. It is preferable to further include an annular convex that protrudes at the same height as each of the support members or at a height lower than each of the plurality of support members from the main surface.
当該構成の基板保持部材によれば、第２通気路の第２開口部を通じて、基体の主面と基板の裏面とにより上下が画定され、かつ、環状凸部により周縁が画定される空間が減圧された際、基板に対して基体の主面に向かって作用する真空吸引力の向上および維持が容易になる。 According to the substrate holding member having the above configuration, the space defined by the main surface of the base and the back surface of the substrate is defined vertically through the second opening of the second air passage, and the space defined by the annular convex portion is reduced in pressure. At the same time, it becomes easy to improve and maintain the vacuum suction force acting on the substrate toward the main surface of the substrate.
（第１実施形態）
（構成）
図１、図２Ａおよび図２Ｂに示されている本発明の第１実施形態としての基板保持部材は、基体１と、複数の支持部材１２と、環状凸部１４と、第１通気路２１と、第２通気路２２と、を備えている。
First Embodiment
(Constitution)
The substrate holding member according to the first embodiment of the present invention shown in FIGS. 1, 2A and 2B includes a substrate 1, a plurality of supporting members 12, an annular convex portion 14, and a first air passage 21. , And the second air passage 22.
基体１は、ＳｉＣ、ＡｌＮ、Ａｌ2Ｏ3等のセラミックス焼結体により形成され、平坦な主面１０を有している。主面１０は、基板Ｗの支持面を構成しない。主面１０は平坦ではなく、凹曲面または凸曲面であってもよい。第１通気路２１は、基体１の側面から主面１０に対して平行に延在する部分と、当該平行に延在する部分から主面１０に向かって延在するように基体１の内部に形成され、主面１０において開口する複数の第１開口部２１０と、を有している。第２通気路２２は、基体１の側面から主面１０に対して平行に延在する部分と、当該平行に延在する部分から主面１０に向かって延在するように基体１の内部に形成され、主面１０において開口する複数の第２開口部２２０を有している。 The substrate 1 is formed of a ceramic sintered body of SiC, AlN, Al 2 O 3 or the like, and has a flat main surface 10. The main surface 10 does not constitute a support surface of the substrate W. The major surface 10 may not be flat but may be concave or convex. The first air passage 21 extends from the side surface of the base 1 in parallel to the main surface 10 and in the inside of the base 1 so as to extend from the parallel extending portion toward the main surface 10. And a plurality of first openings 210 formed in the main surface 10. The second ventilation path 22 is provided inside the base 1 so as to extend from the side extending from the side of the base 1 parallel to the major surface 10 and from the parallel extending portion toward the major surface 10. A plurality of second openings 220 which are formed and open at the main surface 10 are provided.
本実施形態では、第１開口部２１０は、基体１の主面１０より円柱状に窪んでいる凹部２１１（円柱状のザグリ部）と、凹部２１１を画定する基体１の主面１０より窪んだ底面に開口する孔部２１２と、により構成されている。第１開口部２１０（またはこれを構成する凹部２１１）を画定する基体１の内側面と基体１の主面１０との間に形成される角部は、面取り加工されている。第１開口部２１０は、基体１の主面１０において、中心と、当該中心を基準とする一の方位群を構成する複数の方位（例えば８方位）のそれぞれについて離間した複数（例えば４つ）の位置のそれぞれと、当該一の方位群とは異なる他の方位群を構成する複数の方位（例えば８方位）のそれぞれについて離間した複数（例えば２つ）の位置のそれぞれと、に配置されている。複数の第１開口部２１０は、当該中心を基準とした回転対称性（例えば８回対称性）を有するように配置されている。第１通気路２１のうち主面１０に平行に延在している部分は、複数の第１開口部２１０の位置に合わせて、同心の複数の円環状部分と、当該複数の円環状部分を連通させる基体１の径方向に延在する部分と、を有している。 In the present embodiment, the first opening 210 is recessed from the main surface 10 of the base 1 which defines the recess 211 (the cylindrical counterbore) which is recessed in a cylindrical shape from the main surface 10 of the base 1. It is comprised by the hole 212 opened at the bottom face. The corner formed between the inner surface of the base 1 defining the first opening 210 (or the recess 211 forming the same) and the main surface 10 of the base 1 is chamfered. A plurality of (for example, four) first openings 210 are separated in the main surface 10 of the base 1 with respect to the center and a plurality of orientations (for example, 8 orientations) constituting one orientation group based on the center And each of a plurality of (for example, two) positions spaced apart for each of a plurality of azimuths (for example, 8 azimuths) constituting another azimuth group different from the one azimuth group There is. The plurality of first openings 210 are arranged to have rotational symmetry (for example, eight-fold symmetry) with respect to the center. The portion of the first air passage 21 extending in parallel to the major surface 10 corresponds to the plurality of concentric annular portions and the plurality of annular portions in accordance with the positions of the plurality of first openings 210. And a radially extending portion of the base 1 to be communicated.
第２開口部２２０は、基体１の主面１０において、中心を基準とする第１開口部２１０が配列されている複数の方位とは異なる方位について離間した複数（例えば４つ）の位置のそれぞれに配置されている。第２通気路２２のうち主面１０に平行に延在している部分は、複数の第２開口部２２０の位置に合わせて、基体１の中心から複数の第２開口部２２０が配置された方位に延在する部分と、を有している。 The second opening 220 is provided on the main surface 10 of the base 1 at a plurality of (for example, four) positions spaced apart with respect to an orientation different from a plurality of orientations in which the first opening 210 based on the center is arranged. Is located in The portion of the second air passage 22 extending parallel to the major surface 10 is aligned with the positions of the plurality of second openings 220, and the plurality of second openings 220 are arranged from the center of the base 1 And a portion extending in the azimuth.
第１通気路２１および第２通気路２２のそれぞれは、別個または共通の真空吸引装置に接続されている。複数の第１開口部２１０のすべてが１つの第１通気路２１を構成している必要はなく、一または複数の第１開口部２１０からなる複数の第１開口部群のそれぞれが、別個独立の複数の第１通気路のそれぞれを構成していてもよい。同様に、複数の第２開口部２２０のすべてが１つの第２通気路２２を構成している必要はなく、一または複数の第２開口部２２０からなる複数の第２開口部群のそれぞれが、別個独立の複数の第２通気路のそれぞれを構成していてもよい。 Each of the first air passage 21 and the second air passage 22 is connected to a separate or common vacuum suction device. Not all of the plurality of first openings 210 need to constitute one first air passage 21, and each of the plurality of first opening groups consisting of one or more first openings 210 is independently Each of the plurality of first air passages may be configured. Similarly, it is not necessary that all of the plurality of second openings 220 constitute one second air passage 22, and each of the plurality of second opening groups consisting of one or more of the second openings 220 Each of a plurality of independent second air passages may be configured.
支持部材１２は、ＳｉＣ、ＡｌＮ、Ａｌ2Ｏ3等のセラミックス焼結体により形成されている。支持部材１２を構成するセラミックス焼結体と、基体１を構成するセラミックス焼結体とは、主成分が同一であってもよいし異なっていてもよい。複数の支持部材１２のそれぞれは、複数の第１開口部２１０のそれぞれを少なくとも部分的に塞ぎ、かつ、少なくとも一部が主面１０から同じ高さで突出するように基体１に対して配置される。支持部材１２は、基体１とは別個の取り外し可能な部材である。 The support member 12 is formed of a ceramic sintered body of SiC, AlN, Al 2 O 3 or the like. The ceramic sintered body forming the support member 12 and the ceramic sintered body forming the base 1 may have the same or different main components. Each of the plurality of support members 12 is disposed relative to the base 1 so as to at least partially close each of the plurality of first openings 210 and at least a portion of the plurality of first openings 210 project from the main surface 10 at the same height. Ru. The support member 12 is a removable member separate from the base 1.
本実施形態では、支持部材１２は、上記した基体１の角部により画定される上端縁部よりも大径の球体である。すなわち、支持部材１２は、第１開口部２１０の凹部２１１に部分的に収容され、かつ、上記のように面取り加工された角部に全周にわたって当接することにより第１開口部２１０を塞いでいる。なお、支持部材１２が第１開口部２１０の凹部２１１を画定する底面から離間しているが、支持部材１２が第１開口部２１０の凹部２１１を画定する底面に当接することにより、基体１の主面１０を基準とした支持部材１２の上端面または上端部の高さが決定されてもよい。 In the present embodiment, the support member 12 is a sphere having a diameter larger than the upper end edge defined by the corner of the base 1 described above. That is, the support member 12 is partially accommodated in the recess 211 of the first opening 210, and closes the first opening 210 by abutting on the chamfered corner portion as described above. There is. Although the support member 12 is separated from the bottom surface defining the recess 211 of the first opening 210, the support member 12 abuts on the bottom surface defining the recess 211 of the first opening 210. The height of the upper end surface or the upper end portion of the support member 12 relative to the major surface 10 may be determined.
環状凸部１４は、基体１に設けられ、主面１０において複数の第１開口部２１０および第２開口部２２０を囲むように環状に延在し（図１参照）、かつ、主面１０から複数の支持部材１２のそれぞれと同じ高さで突出している。環状凸部１４の縦断面形状は、矩形状、台形状、三角形状、半円形状など、様々な形状であってもよい。環状凸部１４は、切削加工、ブラスト加工もしくはレーザー加工またはこれらの組み合わせにより形成される。なお、環状凸部１４の高さ（上端面位置）は、主面１０から複数の支持部材１２のそれぞれよりも低くてもよい。 The annular convex portion 14 is provided on the base 1 and annularly extends on the major surface 10 so as to surround the plurality of first openings 210 and the second openings 220 (see FIG. 1), and from the major surface 10 It projects at the same height as each of the plurality of support members 12. The longitudinal cross-sectional shape of the annular convex portion 14 may have various shapes such as a rectangular shape, a trapezoidal shape, a triangular shape, and a semicircular shape. The annular convex portion 14 is formed by cutting, blasting, laser processing, or a combination thereof. The height (upper end surface position) of the annular convex portion 14 may be lower than each of the support members 12 from the main surface 10.
（機能）
本発明の第１実施形態としての基板保持部材によれば、基体１の主面１０において複数の第１開口部２１０のそれぞれを少なくとも部分的に塞ぎ、かつ、少なくとも一部が主面１０から同じ高さで突出するように複数の支持部材１２が配置される（図２Ａおよび図２Ｂ参照）。支持部材１２が球体であり、その中心回りに回転しても、第１開口部２１０に対する支持部材１２の相対的な姿勢は変化しないため、支持部材１２の一部が第１開口部２１０に収容されるように基体１に配置する作業の容易化が図られる。
(function)
According to the substrate holding member as the first embodiment of the present invention, each of the plurality of first openings 210 is at least partially closed on the main surface 10 of the base body 1 and at least a part thereof is the same from the main surface 10 A plurality of support members 12 are arranged to project at height (see FIGS. 2A and 2B). Since the relative posture of the support member 12 with respect to the first opening 210 does not change even if the support member 12 is a sphere and rotates around its center, a part of the support member 12 is accommodated in the first opening 210 It is possible to facilitate the operation of arranging on the substrate 1 as described above.
この状態で、第１通気路２１が減圧されることにより、複数の支持部材１２のそれぞれに対して第１開口部２１０を通じて真空吸引力が作用して基体１に対して吸着される。球形状の複数の支持部材１２のそれぞれが、これよりも小径の第１開口部２１０に部分的に収容され、かつ、上記した基体１の角部に全周にわたって当接した状態で複数の第１開口部２１０のそれぞれを塞ぐ。このため、支持部材１２が第１開口部２１０に対して横方向に変位することが防止され、基体１に対する各支持部材１２の相対的な位置および姿勢がより確実に維持される。 In this state, by depressurizing the first air passage 21, a vacuum suction force acts on each of the plurality of support members 12 through the first opening 210 and is attracted to the substrate 1. Each of the plurality of spherical support members 12 is partially accommodated in the first opening 210 having a diameter smaller than this, and a plurality of the plurality of support members 12 are in contact with the corner portion of the base 1 all around. 1 Each of the openings 210 is closed. Therefore, the support member 12 is prevented from being displaced in the lateral direction with respect to the first opening 210, and the relative position and posture of each support member 12 with respect to the base 1 are more reliably maintained.
また、基体１の主面１０側に基板Ｗが載置されることにより、複数の支持部材１２のうち少なくとも一部の上端面または上端部に基板Ｗの裏面が当接する。この状態で、第２通気路２２が減圧されることにより、第２開口部２２０を通じて基体１の主面１０および基板Ｗの裏面により挟まれ、かつ、環状凸部１４により囲まれた空間が減圧され、基板Ｗに対して基体１の主面に向かう真空吸引力が作用し、基板Ｗが複数の支持部材１２の全部に対して当接して平坦な状態で基板保持部材に吸着保持される。 Further, by placing the substrate W on the main surface 10 side of the substrate 1, the back surface of the substrate W abuts on the upper end surface or the upper end portion of at least a part of the plurality of support members 12. In this state, when the second air passage 22 is decompressed, the space between the main surface 10 of the substrate 1 and the back surface of the substrate W and the annular convex portion 14 is decompressed through the second opening 220 Then, a vacuum suction force acting on the main surface of the substrate 1 acts on the substrate W, and the substrate W abuts against all of the plurality of support members 12 and is adsorbed and held by the substrate holding member in a flat state.
第２通気路２２が減圧状態から解放される（例えば大気圧に戻される）ことにより、基体１の主面１０および基板Ｗの裏面により挟まれた空間も減圧状態から解放され、基板Ｗが基板保持部材から取り外される。第１通気路２１が減圧状態から解放される（例えば大気圧に戻される）ことにより、基体１とは別個の部材である複数の支持部材１２のそれぞれが真空吸引力から解放されて基体１から取り外し可能となる。 When the second air passage 22 is released from the reduced pressure state (for example, returned to the atmospheric pressure), the space sandwiched by the main surface 10 of the substrate 1 and the back surface of the substrate W is also released from the reduced pressure state. It is removed from the holding member. When the first air passage 21 is released from the reduced pressure state (for example, returned to the atmospheric pressure), each of the plurality of support members 12 which are members separate from the base 1 is released from the vacuum suction force and It becomes removable.
このため、複数の支持部材１２のうち少なくとも一部の支持部材１２が摩耗した等の場合、基板保持部材全体ではなく当該少なくとも一部の支持部材１２のみが容易に交換または補修等されることによって基板Ｗの平坦度が確保されるような吸着保持性能が回復され、かつ、基板Ｗに対してプロセスを施すための装置のダウンタイムの短縮化が図られる。さらに、球体である支持部材１２を摩耗部分が例えば横向きになるように回転させることによっても、基体１の主面１０からの複数の支持部材１２の突出高さを元に戻すことができる。 For this reason, when at least a part of the support members 12 of the plurality of support members 12 are worn, etc., only the at least a part of the support members 12 can be easily replaced or repaired instead of the entire substrate holding member. It is possible to recover the adsorption holding performance that secures the flatness of the substrate W, and reduce the down time of the apparatus for applying the process to the substrate W. Furthermore, the protruding heights of the plurality of support members 12 from the major surface 10 of the base 1 can be restored by rotating the support member 12 which is a sphere so that the worn portion is, for example, sideways.
（第２実施形態）
（構成）
図３Ａおよび図３Ｂに示されている本発明の第２実施形態としての基板保持部材においては、支持部材１２０が、第１開口部２１０を構成する凹部２１１を画定する基体１の底面に当接して孔部２１２を少なくとも部分的に塞いだ状態で凹部２１１に一部が収容されるように構成されている。
Second Embodiment
(Constitution)
In the substrate holding member as the second embodiment of the present invention shown in FIGS. 3A and 3B, the support member 120 abuts on the bottom surface of the base 1 defining the recess 211 forming the first opening 210. A part of the hole portion 212 is configured to be accommodated in the recess portion 211 in a state where the hole portion 212 is at least partially closed.
より具体的には、支持部材１２０が、凹部２１１を画定する基体１の底面に下端面を当接させた状態で凹部２１１に少なくとも一部が収容されている円柱状の下部要素１２１と、下部要素１２１の上端面から上方に突出し、下部要素１２１の下端面よりも小面積の上端面を有する円柱状の上部要素１２２と、により構成されている。 More specifically, a cylindrical lower element 121 at least a part of which is accommodated in the recess 211 in a state where the lower end surface of the support member 120 abuts on the bottom surface of the base 1 defining the recess 211; A cylindrical upper element 122 projects upward from the upper end face of the element 121 and has an upper end face smaller in area than the lower end face of the lower element 121.
本実施形態では、円柱状の下部要素１２１は、凹部２１１を画定する基体１の内側面の内径よりも小径であり、その分だけ下部要素１２１の側面および凹部２１１を画定する内側面の間には間隙が存在する。円柱状の下部要素１２１が孔部２１２よりも大径である。このため、第１開口部２１０または第１開口部２１０を構成する孔部２１２の全部が支持部材１２０またはこれを構成する下部要素１２１の下端面により塞がれる。 In the present embodiment, the cylindrical lower element 121 has a diameter smaller than the inner diameter of the inner surface of the base 1 defining the recess 211, and between that side surface and the inner surface defining the recess 211. There is a gap. The cylindrical lower element 121 is larger in diameter than the hole 212. Therefore, the entire first opening 210 or the hole 212 constituting the first opening 210 is closed by the lower end surface of the support member 120 or the lower element 121 constituting the same.
上記した以外の基板保持装置の構成は、第１実施形態と同様であるため、同一符号を用いるとともに説明を省略する。 The configuration of the substrate holding device other than those described above is the same as that of the first embodiment, and thus the same reference numerals are used and the description is omitted.
（機能）
本発明の第２実施形態としての基板保持部材によれば、基体１の主面１０において複数の第１開口部２１０のそれぞれを少なくとも部分的に塞ぎ、かつ、少なくとも一部が主面１０から同じ高さで突出するように複数の支持部材１２０が配置される（図３Ａおよび図３Ｂ参照）。支持部材１２０を構成する円柱状の下部要素１２１がその中心軸線回りに回転しても、第１開口部２１０に対する下部要素１２１の相対的な姿勢は変化しないため、支持部材１２０の下部要素１２１の少なくとも一部が第１開口部２１０の凹部２１１に収容されるように基体１に配置する作業の容易化が図られる。
(function)
According to the substrate holding member as the second embodiment of the present invention, each of the plurality of first openings 210 is at least partially closed on the main surface 10 of the base body 1 and at least a part thereof is the same from the main surface 10 A plurality of support members 120 are arranged to project at height (see FIGS. 3A and 3B). Since the relative posture of the lower element 121 with respect to the first opening 210 does not change even if the cylindrical lower element 121 constituting the support member 120 rotates about its central axis, the lower element 121 of the support member 120 does not change. The operation of arranging on the base 1 so that at least a part thereof is accommodated in the recess 211 of the first opening 210 is facilitated.
この状態で、第１通気路２１が減圧されることにより、複数の支持部材１２０のそれぞれに対して第１開口部２１０を通じて真空吸引力が作用して、複数の支持部材１２０のそれぞれが基体１に対して吸着される。支持部材１２０を構成する円柱状の下部要素１２１の下端面が、これよりも小径の複数の第１開口部２１０のそれぞれを塞ぐ。この際、支持部材１２０が第１開口部２１０に対して横方向に変位することが凹部２１１を画定する内側面によって抑制され、基体１に対する各支持部材１２０の相対的な位置および姿勢が確実に維持される。 In this state, when the first air passage 21 is decompressed, a vacuum suction force acts on each of the plurality of support members 120 through the first opening 210, and each of the plurality of support members 120 is the base 1. Is adsorbed against. The lower end surface of the cylindrical lower element 121 constituting the support member 120 closes each of the plurality of first openings 210 having a smaller diameter than this. At this time, lateral displacement of the support member 120 with respect to the first opening 210 is suppressed by the inner side surface defining the recess 211, so that the relative position and posture of each support member 120 with respect to the base 1 can be assured. Maintained.
また、基体１の主面１０側に基板Ｗが載置されることにより、複数の支持部材１２０またはこれを構成する上部要素１２２のうち少なくとも一部の上端面または上端部に基板Ｗの裏面が当接する。この状態で、第２通気路２２が減圧されることにより、第２開口部２２０を通じて基体１の主面１０および基板Ｗの裏面により挟まれ、かつ、環状凸部１４により囲まれた空間が減圧され、基板Ｗに対して基体１の主面に向かう真空吸引力が作用し、基板Ｗが複数の支持部材１２０の全部に対して当接して平坦な状態で基板保持部材に吸着保持される。 Further, by placing the substrate W on the main surface 10 side of the substrate 1, the back surface of the substrate W is on the upper end surface or the upper end portion of at least a part of the plurality of support members 120 or the upper elements 122 constituting them. Abut. In this state, when the second air passage 22 is decompressed, the space between the main surface 10 of the substrate 1 and the back surface of the substrate W and the annular convex portion 14 is decompressed through the second opening 220 The vacuum suction force acting on the substrate W toward the main surface of the substrate 1 acts on the substrate W, and the substrate W abuts against all of the plurality of support members 120 and is adsorbed and held by the substrate holding member in a flat state.
支持部材１２０を構成する下部要素１２１の下端面の面積よりも、上部要素１２２の上端面の面積が小さいため、第１通気路２１が減圧された際に、第１開口部２１０の孔部２１２を通じて、支持部材１２０を構成する下部要素１２１の下端面に対して作用する真空吸引力の増大が図られるので、支持部材１２０の基体１に対する位置および姿勢が確実に維持される。これに加えて、支持部材１２０を構成する上部要素１２２の上端面と基板Ｗの裏面との接触面積の低減が図られる。 Since the area of the upper end face of the upper element 122 is smaller than the area of the lower end face of the lower element 121 constituting the support member 120, the holes 212 of the first opening 210 when the first air passage 21 is depressurized. Since the vacuum suction force acting on the lower end surface of the lower element 121 constituting the support member 120 is increased through the above, the position and posture of the support member 120 with respect to the base 1 can be reliably maintained. In addition to this, the contact area between the upper end surface of the upper element 122 constituting the support member 120 and the back surface of the substrate W can be reduced.
第２通気路２２が減圧状態から解放される（例えば大気圧に戻される）ことにより、基体１の主面１０および基板Ｗの裏面により挟まれた空間も減圧状態から解放され、基板Ｗが基板保持部材から取り外される。第１通気路２１が減圧状態から解放される（例えば大気圧に戻される）ことにより、基体１とは別個の部材である複数の支持部材１２０のそれぞれが真空吸引力から解放されて基体１から取り外し可能となる。 When the second air passage 22 is released from the reduced pressure state (for example, returned to the atmospheric pressure), the space sandwiched by the main surface 10 of the substrate 1 and the back surface of the substrate W is also released from the reduced pressure state. It is removed from the holding member. When the first air passage 21 is released from the reduced pressure state (for example, returned to the atmospheric pressure), each of the plurality of support members 120 which are members separate from the substrate 1 is released from the vacuum suction force and It becomes removable.
このため、複数の支持部材１２０のうち少なくとも一部の支持部材１２０が摩耗または損傷した場合、基板保持部材全体ではなく当該少なくとも一部の支持部材１２０のみが交換または補修されることによって基板Ｗの平坦度が確保されるような吸着保持性能が回復され、かつ、基板Ｗに対してプロセスを施すための装置のダウンタイムの短縮化が図られる。 Therefore, when at least a part of the support members 120 among the plurality of support members 120 is worn or damaged, only the at least a part of the support members 120 is replaced or repaired instead of the entire substrate holding member. The adsorption holding performance that secures the flatness is recovered, and the downtime of the apparatus for applying the process to the substrate W can be shortened.
（本発明の他の実施形態）
第１実施形態では、基体１の内側面と主面１０との角部によって画定される第１開口部２１０の上端縁部が円形状であり、支持部材１２が球形状であったが、支持部材１２が基体１の角部に対して全周にわたって当接するように、支持部材１２および第１開口部２１０の上端縁部のそれぞれの形状およびサイズがさまざまな形態で設計されてもよい。例えば、第１開口部２１０の上端縁部が円形状に形成され、支持部材１２の下部が球面状、楕円球面状、下向きの円錐状または下向きの円錐台状などに形成されていてもよい。また、第１開口部２１０の上端縁部が矩形状に形成され、支持部材１２の下部が下向きの四角錐状または下向きの四角錐台状などに形成されていてもよい。基体１の角部には面取り加工（Ｃ面取り加工・Ｒ面取り加工）が施されていることが好ましい。
(Other embodiments of the present invention)
In the first embodiment, the upper end edge of the first opening 210 defined by the inner surface of the base 1 and the corner of the main surface 10 is circular and the support member 12 is spherical but support The shape and size of each of the upper end edge of the support member 12 and the first opening 210 may be designed in various forms so that the member 12 abuts on the entire periphery of the corner of the base 1. For example, the upper end edge of the first opening 210 may be formed in a circular shape, and the lower portion of the support member 12 may be formed in a spherical shape, an elliptical spherical shape, a downward conical shape or a downward conical shape. Further, the upper end edge of the first opening 210 may be formed in a rectangular shape, and the lower portion of the support member 12 may be formed in the shape of a downward facing square pyramid or a downward facing square pyramid. It is preferable that chamfering (C-chamfering and R-chamfering) is applied to the corner of the substrate 1.
第１実施形態において、支持部材１２が基体１の角部に対して周方向の一部において当接するように、支持部材１２および第１開口部２１０の上端縁部のそれぞれの形状が変更されてもよい。例えば、第１開口部２１０の上端縁部が前方後円形状に形成され、支持部材１２の下部が当該後円より大径の球面状、半楕円球面状、底面が当該後円より大径の下向きの円錐状または下向きの円錐台状などに形成されていてもよい。 In the first embodiment, the shapes of the upper end edges of the support member 12 and the first opening 210 are changed such that the support member 12 abuts the corner of the base 1 in a part in the circumferential direction. It is also good. For example, the upper end edge of the first opening 210 is formed in a front back circular shape, the lower portion of the support member 12 is a spherical shape having a larger diameter than that of the back circle, a semi-elliptic spherical shape, and the bottom is larger in diameter than the back circle. It may be formed in a downward conical shape or a downward conical shape or the like.
第２実施形態において、支持部材１２０を構成する下部要素１２１および上部要素１２２がともに円柱状に形成されていたが、これ以外のさまざまな形状に形成されていてもよい。例えば、下部要素１２１が柱状に形成され、上部要素１２２が下部要素１２１の上端面と底面を共通にする円錐台状または各錐台状に形成されていてもよい。 In the second embodiment, the lower element 121 and the upper element 122 constituting the support member 120 are both formed in a cylindrical shape, but may be formed in various shapes other than this. For example, the lower element 121 may be formed in a columnar shape, and the upper element 122 may be formed in a truncated cone shape or frustum shape in which the upper end surface and the bottom surface of the lower element 121 are common.
第２実施形態において、支持部材１２０を構成する下部要素１２１の下端面の面積より上部要素１２２の上端面の面積が小さく設計されていたが、下部要素１２１の下端面の面積より上部要素１２２の上端面の面積が大きく設計されていてもよく、または、下部要素１２１の下端面の面積と上部要素１２２の上端面の面積とが同じになるように設計されていてもよい。例えば、支持部材１２０が下部要素１２１および上部要素１２２の区別なく、柱状または筒状に形成されていてもよい。 In the second embodiment, although the area of the upper end face of the upper element 122 is designed to be smaller than the area of the lower end face of the lower element 121 constituting the support member 120, the area of the upper end face of the lower element 121 is The area of the upper end face may be designed to be large, or the area of the lower end face of the lower element 121 and the area of the upper end face of the upper element 122 may be designed to be the same. For example, the support member 120 may be formed in a columnar or cylindrical shape without distinction between the lower element 121 and the upper element 122.
第２実施形態において、支持部材１２０が第１開口部２１０を構成する孔部２１２の全部を塞ぐように、支持部材１２０のそれぞれの形状およびサイズがさまざまな形態で設計されてもよい。例えば、支持部材１２０が上向きの円錐状、角錐状、円錐台状、角錐台状、段差付きの錐状または錐台状などの形状に形成され、その底面または下底面が孔部２１２の全部を塞ぐようにサイズが設計されてもよい。第２実施形態において、支持部材１２０が第１開口部２１０を構成する孔部２１２の一部を塞ぐように、支持部材１２のそれぞれの形状およびサイズがさまざまな形態で設計されてもよい。例えば、支持部材１２が上向きの円錐状、角錐状、円錐台状または角錐台状などに形成され、底面または下底面の面積が小さくされることで孔部２１２の一部のみを塞ぐようにサイズが設計されてもよい。 In the second embodiment, each shape and size of the support member 120 may be designed in various forms such that the support member 120 blocks all of the holes 212 constituting the first opening 210. For example, the support member 120 is formed in an upward conical, pyramidal, frustoconical, truncated pyramidal, stepped conical or frustum-like shape, and the bottom surface or the bottom surface is the entire hole 212. The size may be designed to close. In the second embodiment, the shape and size of each of the support members 12 may be designed in various forms such that the support members 120 block part of the holes 212 constituting the first opening 210. For example, the support member 12 is formed in a conical shape, a pyramid shape, a truncated cone shape or a truncated pyramid shape upward, and the area of the bottom surface or the lower surface is reduced to block only a part of the hole 212 May be designed.
前記実施形態の基板保持部材において、基体１における環状凸部１４が省略されてもよい。前記実施形態の基板保持部材において、複数の支持部材１２、１２０の基体１の主面１０からの突出高さ（上端点または上端面の高さ位置）はすべて同じであったが、一部の突出部材１２、１２０の基体１の主面１０からの突出高さが、他の突出部材１２、１２０の基体１の主面１０からの突出高さと異なっていてもよい。 In the substrate holding member of the embodiment, the annular convex portion 14 in the base 1 may be omitted. In the substrate holding member of the embodiment, the protruding heights (upper end points or height positions of upper end surfaces) of the plurality of support members 12 and 120 from the main surface 10 of the base 1 are all the same. The projecting height of the projecting members 12 and 120 from the main surface 10 of the base 1 may be different from the projecting height of the other projecting members 12 and 120 from the main surface 10 of the base 1.
前記実施形態の基板保持部材において、環状凸部１４の基体１の主面１０からの突出高さは、複数の支持部材１２、１２０の基体１の主面１０からの突出高さと同じであったが、環状凸部１４の基体１の主面１０からの突出高さが、複数の支持部材１２、１２０の基体１の主面１０からの突出高さより低くてもよい。このとき、環状凸部１４は、基体１の主面１０および基板Ｗの裏面により挟まれ、かつ、環状凸部１４により囲まれた空間と大気との差圧が５０ｋＰａ以上確保できる程度の高さに調節されることが好ましい。環状凸部１４の突出高さを支持部材１２、１２０の突出高さより低くすると、環状凸部１４と基板Ｗとの接触が回避される分だけ基板Ｗと基体１との接触面積が小さくなるため、基体１が基板Ｗに接触することに由来するパーティクルの発生を抑制することができる。 In the substrate holding member of the embodiment, the protrusion height from the main surface 10 of the base 1 of the annular convex portion 14 is the same as the protrusion height from the main surface 10 of the base 1 of the plurality of support members 12 and 120. However, the protrusion height of the annular convex portion 14 from the main surface 10 of the base 1 may be lower than the protrusion height of the plurality of support members 12, 120 from the main surface 10 of the base 1. At this time, the annular convex portion 14 is sandwiched by the main surface 10 of the base 1 and the back surface of the substrate W, and has a height such that a differential pressure between the space surrounded by the annular convex portion 14 and the air can be maintained at 50 kPa or more. It is preferable to be adjusted to When the projection height of the annular convex portion 14 is made smaller than the projection height of the support members 12 and 120, the contact area between the substrate W and the base 1 is reduced by the amount by which the contact between the annular convex portion 14 and the substrate W is avoided. The generation of particles derived from the substrate 1 coming into contact with the substrate W can be suppressed.
前記実施形態の基板保持部材において、支持部材１２、１２０は、ＳｉＣ、ＡｌＮ、Ａ2ｌＯ3等のセラミックス焼結体であったが、支持部材１２、１２０を構成する素材は、ポリイミド、ＰＴＦＥ（ポリテトラフルオロエチレン）、ＰＥＥＫ（ポリエーテルエーテルケトン）などの合成樹脂、金属、あるいは石英ガラスであってもよい。支持部材１２、１２０が合成樹脂からなる場合には、支持部材１２、１２０がセラミックス焼結体である場合と比較してケミカルコンタミネーションを抑制することができる。 In the substrate holding member of the embodiment, the support members 12 and 120 are ceramic sintered bodies of SiC, AlN, A 2 lO 3 or the like, but the material constituting the support members 12 and 120 is polyimide, PTFE ( It may be synthetic resin such as polytetrafluoroethylene), PEEK (polyether ether ketone), metal, or quartz glass. When the support members 12 and 120 are made of a synthetic resin, chemical contamination can be suppressed as compared with the case where the support members 12 and 120 are ceramic sintered bodies.
（実施例）
（実施例１）
図１、図２Ａおよび図２Ｂに示されている本発明の第１実施形態にしたがって実施例１の基板保持装置が作製された。外径φ３００ｍｍ、厚さ７ｍｍの略円盤状のＳｉＣセラミックス焼結体からなる基体１が作製された。直径１．５ｍｍ、基体１の主面１０からの深さ２．０ｍｍの略円柱状の凹部２１１と、直径１．０ｍｍ、基体１の主面１０からの深さ３．０ｍｍの略円柱状の孔部２１２と、を有する第１開口部２１０と、直径２．０ｍｍ、基体１の主面１０からの深さ５．０ｍｍの略円柱状の第２開口部２２０と、が形成された。直径４ｍｍの略球形状のアルミナ焼結体からなる複数の支持部材１２が作製された。外径φ２９９ｍｍ、幅０．５ｍｍ、高さ５００μｍの略矩形状の縦断面形状を有する円環状の環状凸部１４が基体１の主面１０の周縁部に形成された。基体１の主面１０と第１開口部２１０を画定する基体１の内側面との角部が面取り加工されることにより、角部に対して、球形状の支持部材１２を当接させた際、支持部材１２の高さが環状凸部１４の高さと同じになるように調節された。
(Example)
Example 1
The substrate holding device of Example 1 was manufactured according to the first embodiment of the present invention shown in FIGS. 1, 2A and 2B. A substrate 1 made of a substantially disk-shaped SiC ceramic sintered body having an outer diameter of 300 mm and a thickness of 7 mm was produced. A substantially cylindrical recess 211 having a diameter of 1.5 mm and a depth of 2.0 mm from the main surface 10 of the substrate 1, and a diameter of 1.0 mm and a substantially cylindrical shape having a depth of 3.0 mm from the main surface 10 of the substrate 1 A first opening 210 having a hole 212 and a substantially cylindrical second opening 220 having a diameter of 2.0 mm and a depth of 5.0 mm from the main surface 10 of the base 1 were formed. A plurality of support members 12 made of a substantially spherical alumina sintered body having a diameter of 4 mm were produced. An annular annular convex portion 14 having an outer diameter of 299 mm, a width of 0.5 mm, and a height of 500 μm and having a substantially rectangular longitudinal cross-sectional shape was formed on the peripheral portion of the main surface 10 of the substrate 1. When the spherical support member 12 is abutted against the corner by chamfering the corner between the main surface 10 of the base 1 and the inner surface of the base 1 defining the first opening 210. The height of the support member 12 is adjusted to be the same as the height of the annular convex portion 14.
基体１の主面１０側に基板Ｗとしてシリコンウエハを載置した後、第１通気路２１および第２通気路２２が真空吸引装置により、基体１の主面１０および基板Ｗの裏面により挟まれ、かつ、環状凸部１４により囲まれた空間と大気との差圧が８５ｋＰａとなるまで減圧された。その結果、基板Ｗは環状凸部１４および支持部材１２のそれぞれの上端面に形成される平面で吸着保持された。この状態で、基板Ｗの平坦度をレーザー干渉計（ＺＹＧＯ社製 ＧＰＩ Ｈｓ）で測定した。基板Ｗ全体での測定結果は、ＰＶ値で３．１μｍであり、十分な平坦度が確保された状態で基板Ｗを基板保持部材で吸着保持できることが確認された。 After placing a silicon wafer as a substrate W on the main surface 10 side of the substrate 1, the first air passage 21 and the second air passage 22 are sandwiched by the main surface 10 of the substrate 1 and the back surface of the substrate W by a vacuum suction device. And, the pressure difference between the space surrounded by the annular convex portion 14 and the atmosphere was reduced to 85 kPa. As a result, the substrate W was held by suction in the plane formed on the upper end surfaces of the annular convex portion 14 and the support member 12. In this state, the flatness of the substrate W was measured by a laser interferometer (GPI Hs manufactured by ZYGO). The measurement result of the entire substrate W was 3.1 μm in PV value, and it was confirmed that the substrate W can be adsorbed and held by the substrate holding member in a state where sufficient flatness is secured.
（実施例２）
図３Ａおよび図３Ｂに示されている本発明の第２実施形態にしたがって実施例２の基板保持装置が作製された。外径φ３００ｍｍ、厚さ７ｍｍの略円盤状のＳｉＣセラミックス焼結体からなる基体１が作製された。直径４．０ｍｍ、基体１の主面１０からの深さ３．０ｍｍの略円柱状の凹部２１１と、直径１．０ｍｍ、基体１の主面１０からの深さ３．０ｍｍの略円柱状の孔部２１２と、直径２．０ｍｍ、基体１の主面１０からの深さ５．０ｍｍの略円柱状の第２開口部２２０と、が形成された。外径φ３．９ｍｍ、高さ２．６ｍｍの略円柱状の下部要素１２１および外径φ０．５ｍｍ、高さ０．５ｍｍの略円柱状の上部要素１２２により構成されるアルミナ焼結体からなる複数の支持部材１２０が作製された。外径φ２９９ｍｍ、幅０．５ｍｍ、高さ１００μｍの略矩形状の縦断面形状を有する円環状の環状凸部１４が基体１の主面１０の周縁部に形成された。
(Example 2)
The substrate holding device of Example 2 was manufactured according to the second embodiment of the present invention shown in FIGS. 3A and 3B. A substrate 1 made of a substantially disk-shaped SiC ceramic sintered body having an outer diameter of 300 mm and a thickness of 7 mm was produced. A substantially cylindrical recess 211 having a diameter of 4.0 mm and a depth of 3.0 mm from the main surface 10 of the substrate 1 and a diameter of 1.0 mm and a substantially cylindrical shape having a depth of 3.0 mm from the main surface 10 of the substrate 1 A hole 212 and a substantially cylindrical second opening 220 having a diameter of 2.0 mm and a depth of 5.0 mm from the main surface 10 of the base 1 were formed. A plurality of alumina sintered bodies constituted of a substantially cylindrical lower element 121 having an outer diameter of 3.9 mm and a height of 2.6 mm and a substantially cylindrical upper element 122 having an outer diameter of 0.5 mm and a height of 0.5 mm The support member 120 was manufactured. An annular annular convex portion 14 having an outer diameter of 299 mm, a width of 0.5 mm, and a height of 100 μm and having a substantially rectangular longitudinal cross-sectional shape is formed on the peripheral portion of the main surface 10 of the substrate 1.
基体１の主面１０側に基板Ｗとしてシリコンウエハを載置した後、第１通気路２１および第２通気路２２が真空吸引装置により、基体１の主面１０および基板Ｗの裏面により挟まれ、かつ、環状凸部１４により囲まれた空間と大気との差圧が８０ｋＰａとなるまで減圧された。その結果、基板Ｗは環状凸部１４および支持部材１２のそれぞれの上端面に形成される平面で吸着保持された。この状態で、基板Ｗの平坦度をレーザー干渉計（ＺＹＧＯ社製 ＧＰＩ Ｈｓ）で測定した。基板Ｗ全体での測定結果は、ＰＶ値で４．８μｍであり、十分な平坦度が確保された状態で基板Ｗを基板保持部材で吸着保持できることが確認された。 After placing a silicon wafer as a substrate W on the main surface 10 side of the substrate 1, the first air passage 21 and the second air passage 22 are sandwiched by the main surface 10 of the substrate 1 and the back surface of the substrate W by a vacuum suction device. And, the pressure difference between the space surrounded by the annular convex portion 14 and the atmosphere was reduced to 80 kPa. As a result, the substrate W was held by suction in the plane formed on the upper end surfaces of the annular convex portion 14 and the support member 12. In this state, the flatness of the substrate W was measured by a laser interferometer (GPI Hs manufactured by ZYGO). The measurement result of the entire substrate W was 4.8 μm in PV value, and it was confirmed that the substrate W can be adsorbed and held by the substrate holding member in a state where sufficient flatness is secured.
１‥基体、１０‥主面、１２、１２０‥支持部材、１４‥環状凸部、２１‥第１通気路、２２‥第２通気路、１２１‥下部要素、１２２‥上部要素、２１０‥第１開口部、２１１‥凹部、２１２‥孔部、２２０‥第２開口部、Ｗ‥基板（ウエハ）。 1. base body 10. main surface 12, 120 support member 14. annular convex portion 21 first air passage 22 second air passage 121 lower element 122 upper element 210. first Openings 211. Recesses 212. Openings 220. Second opening W. Substrate (wafer).
Claims (7)
前記基体に設けられ、前記主面において開口する複数の第１開口部を有する１つ以上の第１通気路と、
前記基体に設けられ、前記主面において開口する第２開口部を有する第２通気路と、
前記複数の第１開口部のそれぞれを少なくとも部分的に塞ぎ、かつ、少なくとも一部が前記主面から突出するように前記基体に対して取り外し可能に配置される複数の支持部材と、を備えていることを特徴とする基板保持部材。 A substrate having a main surface,
One or more first vents provided on the base and having a plurality of first openings that open in the main surface;
A second vent provided in the base and having a second opening that opens in the main surface;
And a plurality of support members removably arranged on the base such that at least a portion of each of the plurality of first openings is at least partially closed and at least a portion of the plurality of first openings project from the main surface. A substrate holding member characterized in that
前記支持部材が、前記第１開口部の上端縁部よりも大径の球体であることを特徴とする請求項２記載の基板保持部材。 The top edge of the first opening defined by the corner is circular,
3. The substrate holding member according to claim 2, wherein the support member is a sphere having a diameter larger than the upper end edge of the first opening.
前記支持部材は、前記底面に当接して前記孔部を少なくとも部分的に塞いだ状態で前記凹部に一部が収容されることを特徴とする請求項１記載の基板保持部材。 Each of the plurality of first openings is constituted by a recess defined by a bottom surface recessed from the main surface, and a hole opening in the bottom surface,
2. The substrate holding member according to claim 1, wherein the supporting member is partially accommodated in the recess in a state where the supporting member abuts on the bottom surface to at least partially close the hole.
前記支持部材は、円柱状の前記下部要素と、前記下部要素よりも小径の円柱状の前記上部要素と、により構成されていることを特徴とする請求項５記載の基板保持部材。 Each of the plurality of recesses has a cylindrical shape recessed from the main surface,
6. The substrate holding member according to claim 5, wherein the support member is configured by the cylindrical lower element and the cylindrical upper element having a smaller diameter than the lower element.
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| JP2022542091A (en) * | 2019-07-30 | 2022-09-29 | アプライド マテリアルズ インコーポレイテッド | Low contact area substrate support for etch chambers |
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