JP2019041120A - 凹型電極構造を有する半導体装置 - Google Patents
凹型電極構造を有する半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 145
- 230000005669 field effect Effects 0.000 claims abstract description 41
- 239000011810 insulating material Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
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- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
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- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (1)
- 電界効果トランジスタであって、
ソース領域と、
ドレイン領域と、
前記ソース領域と前記ドレイン領域との間に位置するとともに、前記ソース領域と前記ドレイン領域との間に延びる方向に沿って延在する複数の溝を有する半導体領域と、
前記複数の溝内に形成された複数の導電領域を有するとともに、前記ソース領域と前記ドレイン領域との間の距離の一部だけに延在する導電電極と、
前記半導体領域と前記導電電極との間であって、少なくとも部分的に前記半導体領域と前記導電電極との間の境界面に亘って延在する絶縁領域と、
を含み、
前記導電電極はダイオードのアノードを形成し、前記アノードは前記電界効果トランジスタのゲートと前記ドレイン領域との間に位置され、かつ前記アノードは前記ソース領域に電気的に接続されている電界効果トランジスタ。
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US201161545925P | 2011-10-11 | 2011-10-11 | |
US61/545,925 | 2011-10-11 |
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JP2017044734A Division JP2017126768A (ja) | 2011-10-11 | 2017-03-09 | 凹型電極構造を有する半導体装置 |
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JP2014535875A Pending JP2014534632A (ja) | 2011-10-11 | 2012-10-11 | 凹型電極構造を有する半導体装置 |
JP2017044734A Pending JP2017126768A (ja) | 2011-10-11 | 2017-03-09 | 凹型電極構造を有する半導体装置 |
JP2018212203A Pending JP2019041120A (ja) | 2011-10-11 | 2018-11-12 | 凹型電極構造を有する半導体装置 |
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JP2017044734A Pending JP2017126768A (ja) | 2011-10-11 | 2017-03-09 | 凹型電極構造を有する半導体装置 |
Country Status (6)
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US (2) | US9041003B2 (ja) |
EP (2) | EP2766934A4 (ja) |
JP (3) | JP2014534632A (ja) |
KR (1) | KR20140070663A (ja) |
CN (1) | CN103930997B (ja) |
WO (1) | WO2013055915A2 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI565094B (zh) * | 2012-11-15 | 2017-01-01 | 財團法人工業技術研究院 | 氮化物半導體結構 |
US9911813B2 (en) * | 2012-12-11 | 2018-03-06 | Massachusetts Institute Of Technology | Reducing leakage current in semiconductor devices |
JP6011414B2 (ja) * | 2013-03-26 | 2016-10-19 | トヨタ自動車株式会社 | 半導体装置 |
US9048303B1 (en) * | 2014-01-30 | 2015-06-02 | Infineon Technologies Austria Ag | Group III-nitride-based enhancement mode transistor |
JP6344137B2 (ja) * | 2014-08-19 | 2018-06-20 | 富士電機株式会社 | 半導体装置及びその製造方法 |
US10468406B2 (en) | 2014-10-08 | 2019-11-05 | Northrop Grumman Systems Corporation | Integrated enhancement mode and depletion mode device structure and method of making the same |
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CN103930997A (zh) | 2014-07-16 |
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WO2013055915A2 (en) | 2013-04-18 |
EP3540782A3 (en) | 2020-01-01 |
EP3540782A2 (en) | 2019-09-18 |
CN103930997B (zh) | 2018-10-02 |
EP2766934A4 (en) | 2015-07-08 |
JP2017126768A (ja) | 2017-07-20 |
US20140070228A1 (en) | 2014-03-13 |
JP2014534632A (ja) | 2014-12-18 |
US20130099247A1 (en) | 2013-04-25 |
KR20140070663A (ko) | 2014-06-10 |
WO2013055915A3 (en) | 2013-07-11 |
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