FR2850791B1 - Composant unipolaire vertical - Google Patents

Composant unipolaire vertical

Info

Publication number
FR2850791B1
FR2850791B1 FR0301077A FR0301077A FR2850791B1 FR 2850791 B1 FR2850791 B1 FR 2850791B1 FR 0301077 A FR0301077 A FR 0301077A FR 0301077 A FR0301077 A FR 0301077A FR 2850791 B1 FR2850791 B1 FR 2850791B1
Authority
FR
France
Prior art keywords
vertical
unipolar component
vertical unipolar
stack
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0301077A
Other languages
English (en)
Other versions
FR2850791A1 (fr
Inventor
Frederic Lanois
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0301077A priority Critical patent/FR2850791B1/fr
Priority to US10/767,568 priority patent/US7078783B2/en
Publication of FR2850791A1 publication Critical patent/FR2850791A1/fr
Application granted granted Critical
Publication of FR2850791B1 publication Critical patent/FR2850791B1/fr
Priority to US11/413,519 priority patent/US20060205196A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)

Abstract

L'invention concerne un composant unipolaire vertical formé dans un substrat semiconducteur. Une partie supérieure (40) du substrat comporte des tranchées isolées remplies d'un empilement vertical d'au moins deux éléments conducteurs (43, 44) séparés par une couche isolante (46), la profondeur de l'empilement étant au plus égale à l'épaisseur de la partie supérieure.
FR0301077A 2003-01-30 2003-01-30 Composant unipolaire vertical Expired - Fee Related FR2850791B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR0301077A FR2850791B1 (fr) 2003-01-30 2003-01-30 Composant unipolaire vertical
US10/767,568 US7078783B2 (en) 2003-01-30 2004-01-29 Vertical unipolar component
US11/413,519 US20060205196A1 (en) 2003-01-30 2006-04-28 Vertical unipolar component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0301077A FR2850791B1 (fr) 2003-01-30 2003-01-30 Composant unipolaire vertical

Publications (2)

Publication Number Publication Date
FR2850791A1 FR2850791A1 (fr) 2004-08-06
FR2850791B1 true FR2850791B1 (fr) 2006-01-21

Family

ID=32696228

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0301077A Expired - Fee Related FR2850791B1 (fr) 2003-01-30 2003-01-30 Composant unipolaire vertical

Country Status (2)

Country Link
US (2) US7078783B2 (fr)
FR (1) FR2850791B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006295062A (ja) * 2005-04-14 2006-10-26 Rohm Co Ltd 半導体装置
US20060255401A1 (en) * 2005-05-11 2006-11-16 Yang Robert K Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures
US7535057B2 (en) * 2005-05-24 2009-05-19 Robert Kuo-Chang Yang DMOS transistor with a poly-filled deep trench for improved performance
US20070012983A1 (en) * 2005-07-15 2007-01-18 Yang Robert K Terminations for semiconductor devices with floating vertical series capacitive structures
US8080848B2 (en) * 2006-05-11 2011-12-20 Fairchild Semiconductor Corporation High voltage semiconductor device with lateral series capacitive structure
US20080296636A1 (en) * 2007-05-31 2008-12-04 Darwish Mohamed N Devices and integrated circuits including lateral floating capacitively coupled structures
US8193565B2 (en) 2008-04-18 2012-06-05 Fairchild Semiconductor Corporation Multi-level lateral floating coupled capacitor transistor structures
US8624302B2 (en) * 2010-02-05 2014-01-07 Fairchild Semiconductor Corporation Structure and method for post oxidation silicon trench bottom shaping
US8461646B2 (en) * 2011-02-04 2013-06-11 Vishay General Semiconductor Llc Trench MOS barrier schottky (TMBS) having multiple floating gates
CN103930997B (zh) * 2011-10-11 2018-10-02 麻省理工学院 具有凹陷电极结构的半导体器件
US8704296B2 (en) 2012-02-29 2014-04-22 Fairchild Semiconductor Corporation Trench junction field-effect transistor
CN105957884A (zh) * 2016-06-24 2016-09-21 上海格瑞宝电子有限公司 一种分栅栅极沟槽结构和沟槽肖特基二极管及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2570742B2 (ja) * 1987-05-27 1997-01-16 ソニー株式会社 半導体装置
DE4401442C1 (de) * 1994-01-19 1995-03-23 Siemens Ag Mikroelektronisches Bauelement
US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
EP1170803A3 (fr) * 2000-06-08 2002-10-09 Siliconix Incorporated MOSFET à grille en tranchée et sa méthode de fabrication
DE10038177A1 (de) * 2000-08-04 2002-02-21 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterschaltelement mit zwei Steuerelektroden
US6420768B1 (en) * 2000-12-15 2002-07-16 General Semiconductor, Inc. Trench schottky barrier rectifier and method of making the same
JP2002373989A (ja) * 2001-06-13 2002-12-26 Toshiba Corp 半導体装置
DE10339455B3 (de) * 2003-08-27 2005-05-04 Infineon Technologies Ag Vertikales Halbleiterbauelement mit einer eine Feldelektrode aufweisenden Driftzone und Verfahren zur Herstellung einer solchen Driftzone

Also Published As

Publication number Publication date
US7078783B2 (en) 2006-07-18
US20040183115A1 (en) 2004-09-23
FR2850791A1 (fr) 2004-08-06
US20060205196A1 (en) 2006-09-14

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20091030