JP2019003127A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 72
- 239000010410 layer Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000011229 interlayer Substances 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims description 87
- 239000002184 metal Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000011159 matrix material Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 17
- 238000002161 passivation Methods 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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Abstract
【解決手段】複数の走査線1と、複数の映像信号線2が形成されたTFT基板100と、前記TFT基板と対向して配置された対向基板200と、前記TFT基板と対向基板との間に液晶層300が挟持された液晶表示装置であって、前記走査線1が形成された層と前記映像信号線2が形成された層間に、層間絶縁膜105が形成され、前記層間絶縁膜105には、前記映像信号線2と重複する位置に凹状溝部1051が形成されることを特徴とする液晶表示装置。
【選択図】図8
Description
溝状のスルーホール1051は、傾斜を有する側壁と底部が存在し、映像信号線2の端部は、溝状のスルーホール1051の側壁に存在している。溝状のスルーホール1051の上側の幅wd1は、映像信号線2の幅wsよりも若干大きく形成され、例えば2μmである。また、溝状のスルーホール1051の底部において、走査線1と同層で形成されたエッチングストッパー11層が存在して、映像信号線2とエッチングストッパー層11とが電気的に接続している。
Claims (20)
- 複数の走査線と、複数の映像信号線が形成されたTFT基板と、前記TFT基板と対向して配置された対向基板と、前記TFT基板と対向基板との間に液晶層が挟持された液晶表示装置であって、
前記走査線が形成された層と前記映像信号線が形成された層間に、層間絶縁膜が形成され、
前記層間絶縁膜には、前記映像信号線と重複する位置に凹状溝部が形成されることを特徴とする液晶表示装置。 - 前記凹状溝部は断面に傾斜部を有し、前記凹状溝部の傾斜部に前記映像信号線の端部が配置していることを特徴とする請求項1に記載の液晶表示装置。
- 前記映像信号線の前記端部は側面を有し、前記側面は、前記TFT基板の法線方向に対し、前記側面が前記液晶層側を向くように、第1の角度で傾いていることを特徴とする請求項1に記載の液晶表示装置。
- 前記第1の角度は、15度以上であることを特徴とする請求項3に記載の液晶表示装置。
- 前記第1の角度は、45度以下であることを特徴とする請求項4に記載の液晶表示装置。
- 前記凹状溝部の前記傾斜部の前記TFT基板の主面に対する角度は15度以上であることを特徴とする請求項2に記載の液晶表示装置。
- 前記凹状溝部の前記傾斜部の前記TFT基板の主面に対する角度は45度以下であることを特徴とする請求項6に記載の液晶表示装置。
- 前記凹状溝部は、前記走査線とは重複しないことを特徴とする請求項1に記載の液晶表示装置。
- 前記映像信号線の液晶層側には絶縁膜が形成され、前記絶縁膜の液晶層側にコモン電極が形成され、
更に、コモン金属配線が、平面で視て、前記映像信号線と重複して、前記コモン電極と接触して形成されており、前記コモン金属配線の前記走査線延在方向の幅は、前記映像信号線の前記走査線延在方向の幅よりも大きいことを特徴とする請求項1に記載の液晶表示装置。 - 前記コモン金属配線の厚さは、前記映像信号線の厚さよりも小さいことを特徴とする請求項9に記載の液晶表示装置。
- 前記対向基板には、平面で視て、前記映像信号線と重複してブラックマトリクスが形成され、前記ブラックマトリクスの前記走査線延在方向の幅は前記映像信号線の前記走査線延在方向の幅よりも大きいことを特徴とする請求項10に記載の液晶表示装置。
- 前記走査線と同じ層であって、前記凹状溝部と重複する位置に金属層が形成されていることを特徴とする請求項1に記載の映像信号線。
- 前記金属層は、前記走査線と同じ材料で形成され、前記走査線において分断していることを特徴とする請求項12に記載の映像信号線。
- 前記金属層の前記走査線延在方向の幅は、前記凹状溝部の前記走査線延在方向の断面における幅以上でありことを特徴とする請求項1に記載の液晶表示装置。
- 前記液晶表示装置はIPS方式の液晶表示装置であることを特徴とする請求項1乃至14のいずれか1項に記載の液晶表示装置。
- 複数の走査線と、複数の映像信号線が形成されたTFT基板と、前記TFT基板と対向して配置された対向基板と、前記TFT基板と対向基板との間に液晶層が挟持された液晶表示装置であって、
前記映像信号線は、前記TFT基板に対して平行に形成された第1の領域と、前記TFT基板に対して傾斜を持って形成された部分を有する第2の領域を有し、
前記映像信号線では、前記第1の領域と前記第2の領域が交互に形成されることを特徴とする液晶表示装置。 - 前記映像信号線の前記第1の領域は、前記走査線と交差する領域に形成され、前記映像信号線の前記第2の領域は、前記走査線と交差しない領域に形成されることを特徴とする請求項16に記載の液晶表示装置。
- 前記映像信号線が形成される層と前記走査線が形成される層の間に、層間絶縁膜が形成され、
前記層間絶縁膜の前記映像信号線の前記第2の領域と重畳する位置には、凹状溝部が形成されることを特徴とする請求項16に記載の液晶表示装置。 - 前記凹状溝部は、前記TFT基板の主面に対して、15度以上であり45度以下の傾斜部を有することを特徴とする請求項18に記載の液晶表示装置。
- 前記凹状溝部の前記TFT基板側に、金属層が形成され、
前記金属層は、前記走査線と同じ層に形成され、且つ前記走査線とは電気的に絶縁されていることを特徴とする請求項18に記載の液晶表示装置。
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