JP2018527743A - 波長変換発光デバイス - Google Patents
波長変換発光デバイス Download PDFInfo
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- JP2018527743A JP2018527743A JP2017567620A JP2017567620A JP2018527743A JP 2018527743 A JP2018527743 A JP 2018527743A JP 2017567620 A JP2017567620 A JP 2017567620A JP 2017567620 A JP2017567620 A JP 2017567620A JP 2018527743 A JP2018527743 A JP 2018527743A
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- 238000006243 chemical reaction Methods 0.000 title description 38
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 109
- 239000002019 doping agent Substances 0.000 claims abstract description 52
- 239000002245 particle Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 31
- 230000005284 excitation Effects 0.000 abstract description 34
- 230000007423 decrease Effects 0.000 abstract description 19
- 239000011159 matrix material Substances 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 8
- 239000012190 activator Substances 0.000 description 26
- 239000013543 active substance Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 229910052693 Europium Inorganic materials 0.000 description 5
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 150000002910 rare earth metals Chemical class 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005283 ground state Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000695 excitation spectrum Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 phosphors Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
多くのプロセスが垂下を引き起こすか、悪化させる可能性があります。本発明の実施形態を任意の特定の理論に限定することなく、ドループに影響を及ぼし得る2つのプロセスは、基底状態の枯渇(exhaustion)及び励起状態相互作用である(本発明の実施形態は、基底状態の枯渇に対処しないことがある)。励起状態相互作用は、励起状態吸収(exited state absorption;ESA)及び量子力学的相互作用(quantum-mechanical interaction;QMI)を含み得る。ESAは、母材の電子バンド構造、及び/又は母材のバンド構造に対するドーパント準位のエネルギー位置に依存し得る。QMIは、母材の結晶構造、特に、発光励起ドーパントと吸収励起ドーパントとの間の距離に依存し得る。例えば、励起された活性剤によって放出された光子が、既に励起された別の活性剤によって吸収されて、光子を放出するのではなく電子を母材の伝導帯に励起し、それにより蛍光体の効率を低下させることがある。この効果は、より高い温度でいっそう見受けられ得る。
Claims (16)
- 第1のピーク波長を持つ光を放つ光源と、
前記光源によって放たれた光の経路内に配置された蛍光体であり、前記光源によって放たれた光を吸収して、第2のピーク波長を持つ光を放つ蛍光体と
を有し、
前記蛍光体は、
母材及びドーパントと、
第1のドーパント濃度を持つ第1の領域と、
第2のドーパント濃度を持つ第2の領域と
を有し、
前記第2のドーパント濃度は前記第1のドーパント濃度よりも低く、且つ
前記蛍光体は、前記光源によって放たれた光が、前記第1の領域よりも前に前記第2の領域に到達するように配置される、
構造体。 - 前記第1及び第2の領域は、第1及び第2の層を有し、前記第2の層が、前記光源と前記第1の層との間に配置されている、請求項1に記載の構造体。
- 前記第2の領域は、前記光源に近接した層であり、
前記第1の領域は、前記第2の領域とは反対側の層であり、且つ
前記第2の領域と前記第1の領域との間で前記ドーパントの濃度が傾斜されている、
請求項1に記載の構造体。 - 前記蛍光体は、複数の粒子を有し、
前記第1の領域は、前記複数の粒子の各々の中心にあり、且つ
前記第2の領域は、前記第1の領域を取り囲む前記複数の粒子の各々の外側領域である、
請求項1に記載の構造体。 - 前記ドーパントはEu2+である、請求項1に記載の構造体。
- 前記ドーパントはCe3+である、請求項1に記載の構造体。
- 発光ダイオードと、
前記発光ダイオードによって放たれた光の経路内に配置された蛍光体粒子であり、各蛍光体粒子が、
第1のドーパント濃度を持つ第1の領域と、
第2のドーパント濃度を持つ第2の領域と
を有し、
前記第2のドーパント濃度は前記第1のドーパント濃度よりも低い、
構造体。 - 前記第1の領域は各蛍光体粒子の中心にあり、前記第2の領域は前記第1の領域を取り囲んでいる、請求項7に記載の構造体。
- 前記第2の領域は各蛍光体粒子の中心にあり、前記第1の領域は前記第2の領域を取り囲んでいる、請求項7に記載の構造体。
- 前記蛍光体粒子は、20μm以下の平均直径を有する、請求項7に記載の構造体。
- 前記蛍光体粒子は、少なくとも2μmの平均直径を有する、請求項7に記載の構造体。
- 前記蛍光体粒子は、50μm以下の平均直径を有する、請求項7に記載の構造体。
- 各蛍光体粒子の直径の一部に沿ってドーパント濃度が傾斜されている、請求項7に記載の構造体。
- 前記ドーパントはEu2+である、請求項7に記載の構造体。
- 前記ドーパントはCe3+である、請求項7に記載の構造体。
- 前記蛍光体粒子は、前記発光ダイオードからの光が、前記第1の領域よりも前に前記第2の領域に突き当たるように構成される、請求項7に記載の構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562188009P | 2015-07-02 | 2015-07-02 | |
US62/188,009 | 2015-07-02 | ||
PCT/EP2016/064987 WO2017001390A1 (en) | 2015-07-02 | 2016-06-28 | Wavelength converted light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018527743A true JP2018527743A (ja) | 2018-09-20 |
JP6890556B2 JP6890556B2 (ja) | 2021-06-18 |
Family
ID=56263714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017567620A Active JP6890556B2 (ja) | 2015-07-02 | 2016-06-28 | 波長変換発光デバイス |
Country Status (7)
Country | Link |
---|---|
US (2) | US10910529B2 (ja) |
EP (1) | EP3320570B1 (ja) |
JP (1) | JP6890556B2 (ja) |
KR (1) | KR102553495B1 (ja) |
CN (1) | CN108337918B (ja) |
TW (1) | TWI729987B (ja) |
WO (1) | WO2017001390A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020195250A1 (ja) * | 2019-03-27 | 2020-10-01 | Tdk株式会社 | 蛍光体および光照射装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018120584A1 (de) * | 2018-08-23 | 2020-02-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
US10873009B2 (en) * | 2018-11-21 | 2020-12-22 | Osram Opto Semiconductors Gmbh | Barrier layer functioned novel-structure ceramic converter materials and light emitting devices |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004146835A (ja) * | 2002-10-22 | 2004-05-20 | Osram Opto Semiconductors Gmbh | Ledおよび発光変換体を有する光源、および発光変換体の製造方法 |
JP2006005367A (ja) * | 2004-06-03 | 2006-01-05 | Lumileds Lighting Us Llc | 発光デバイスのための発光セラミック |
US20090279279A1 (en) * | 2008-05-09 | 2009-11-12 | Silitek Electronic (Guangzhou) Co., Ltd. | Light emitting device and a manufacturing method thereof |
JP2014501685A (ja) * | 2010-12-01 | 2014-01-23 | 日東電工株式会社 | ドーパントの濃度勾配を有する放射性セラミック材料、ならびにその製造方法および使用方法 |
JP2015028148A (ja) * | 2013-07-03 | 2015-02-12 | 日亜化学工業株式会社 | フッ化物蛍光体及びそれを用いた発光装置並びに蛍光体の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102005046450A1 (de) * | 2005-09-28 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, Verfahren zu dessen Herstellung und optoelektronisches Bauteil |
US7902564B2 (en) * | 2006-12-22 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Multi-grain luminescent ceramics for light emitting devices |
DE102007010719A1 (de) * | 2007-03-06 | 2008-09-11 | Merck Patent Gmbh | Leuchtstoffe bestehend aus dotierten Granaten für pcLEDs |
CN102782089B (zh) * | 2010-02-04 | 2015-07-22 | 日东电工株式会社 | 发光陶瓷层压制件及其制造方法 |
RU2608068C2 (ru) | 2010-12-23 | 2017-01-12 | Лтс Ломанн Терапи-Системе Аг | Безопасная для детей высокоинертная упаковка в виде мешка для единичных доз пленок, содержащих действующие вещества |
CN104583365B (zh) | 2012-07-18 | 2016-05-11 | 英特曼帝克司公司 | 基于氮化物的发红光磷光体 |
-
2016
- 2016-06-28 JP JP2017567620A patent/JP6890556B2/ja active Active
- 2016-06-28 US US15/740,549 patent/US10910529B2/en active Active
- 2016-06-28 WO PCT/EP2016/064987 patent/WO2017001390A1/en unknown
- 2016-06-28 KR KR1020187003354A patent/KR102553495B1/ko active IP Right Grant
- 2016-06-28 EP EP16732645.3A patent/EP3320570B1/en active Active
- 2016-06-28 CN CN201680039252.2A patent/CN108337918B/zh active Active
- 2016-07-01 TW TW105121017A patent/TWI729987B/zh active
-
2021
- 2021-01-27 US US17/159,528 patent/US11742463B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004146835A (ja) * | 2002-10-22 | 2004-05-20 | Osram Opto Semiconductors Gmbh | Ledおよび発光変換体を有する光源、および発光変換体の製造方法 |
JP2006005367A (ja) * | 2004-06-03 | 2006-01-05 | Lumileds Lighting Us Llc | 発光デバイスのための発光セラミック |
US20090279279A1 (en) * | 2008-05-09 | 2009-11-12 | Silitek Electronic (Guangzhou) Co., Ltd. | Light emitting device and a manufacturing method thereof |
JP2014501685A (ja) * | 2010-12-01 | 2014-01-23 | 日東電工株式会社 | ドーパントの濃度勾配を有する放射性セラミック材料、ならびにその製造方法および使用方法 |
JP2015028148A (ja) * | 2013-07-03 | 2015-02-12 | 日亜化学工業株式会社 | フッ化物蛍光体及びそれを用いた発光装置並びに蛍光体の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020195250A1 (ja) * | 2019-03-27 | 2020-10-01 | Tdk株式会社 | 蛍光体および光照射装置 |
Also Published As
Publication number | Publication date |
---|---|
EP3320570B1 (en) | 2019-06-12 |
TWI729987B (zh) | 2021-06-11 |
US20210151642A1 (en) | 2021-05-20 |
US20180198040A1 (en) | 2018-07-12 |
CN108337918B (zh) | 2021-07-09 |
KR20180026509A (ko) | 2018-03-12 |
JP6890556B2 (ja) | 2021-06-18 |
KR102553495B1 (ko) | 2023-07-10 |
CN108337918A (zh) | 2018-07-27 |
US10910529B2 (en) | 2021-02-02 |
EP3320570A1 (en) | 2018-05-16 |
TW201709567A (zh) | 2017-03-01 |
US11742463B2 (en) | 2023-08-29 |
WO2017001390A1 (en) | 2017-01-05 |
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