JP2018152582A - 物質変化による固体分離 - Google Patents
物質変化による固体分離 Download PDFInfo
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- JP2018152582A JP2018152582A JP2018090077A JP2018090077A JP2018152582A JP 2018152582 A JP2018152582 A JP 2018152582A JP 2018090077 A JP2018090077 A JP 2018090077A JP 2018090077 A JP2018090077 A JP 2018090077A JP 2018152582 A JP2018152582 A JP 2018152582A
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- solid
- modification
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- 239000007787 solid Substances 0.000 title claims abstract description 394
- 238000000926 separation method Methods 0.000 title claims description 29
- 239000000463 material Substances 0.000 title description 48
- 230000008859 change Effects 0.000 title description 16
- 239000013078 crystal Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 45
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- 230000004048 modification Effects 0.000 claims description 218
- 238000012986 modification Methods 0.000 claims description 216
- 238000002407 reforming Methods 0.000 abstract description 37
- 239000010410 layer Substances 0.000 description 79
- 238000001816 cooling Methods 0.000 description 46
- 230000003287 optical effect Effects 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 15
- 238000004299 exfoliation Methods 0.000 description 13
- 239000000126 substance Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000011343 solid material Substances 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 230000006378 damage Effects 0.000 description 7
- 210000001624 hip Anatomy 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000154 gallium phosphate Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Dicing (AREA)
Abstract
Description
2 剥離領域
4 レーザー光線
5 研磨表面
6 固体中のレーザー光線
7 固体下面
8 焦点
9 改質
10 第1の固体部分
11 固体層
12 第2の固体部分
13 亀裂
14 加工開始位置
15 改質中心
17 基準長さ
18 主表面
25 第1の亀裂部分
27 第2の亀裂部分
28 第3の亀裂部分
29 第4の亀裂部分
30 回転テーブル
31 外縁と第1の改質ブロックとの間の亀裂
32 2つの改質ブロック間の亀裂
33 改質ブロックと他の改質ブロック又は外縁との間の亀裂
34 改質ブロックと外縁との間の亀裂
40 光学系
41 改質ブロックがない第1領域
42 改質ブロックがない第2領域
43 改質ブロックがない第3領域
44 改質ブロックがない第4領域
45 改質ブロックがない第5領域
51 変化していない物質
52 変化した物質
53 ラマンスペクトル
54 強度(%)
56 波長(cm-1)
61 変化していない物質部分のグラフ
62 変化した物質部分のグラフ
65 第1の配向元素
66 第2の配向元素
67 第3の配向元素
68 第4の配向元素
69 センサー手段
75 データ記憶素子及び/又はデータ伝達素子
76 溝
77 液体導入部
78 液体導管
79 液体排出部
80 ガイド‐支持‐構造
71 亀裂部分の第1の端部
72 亀裂部分の第2の端部
91 改質の第1ブロック
92 改質の第2ブロック
112 第2の固体層
113 第3の固体層
140 受容層
150 温度制御液体
161 受容層の変形方向
300 結合層
630 ビームウェスト
632 ビームウェスト
400 スキャナ
401 レーザー光源
402 レーザー光線導管
403 更なるレーザー光線導管
501 第1の固体層の露出表面
502 第2の固体層のレーザー入射表面
503 第2の固体層の露出表面
504 第3の固体層のレーザー入射表面
505 第3の固体層の露出表面
606 光線
608 光学系
610 第1の偏向部材
612 第2の偏向部材
613 第3の偏向部材
616 第1の光線部分
618 第2の光線部分
620 焦点
622 第1の表面部分
624 第2の表面部分
630 ビームウェスト
632 ビームウェスト
901 改質のない第1の領域
902 改質のない第2の領域
903 改質のない第3の領域
Claims (1)
- 固体(1)中に、前記固体(1)から、固体部分(12)、特に固体層(12)を剥離するために剥離領域(2)を形成する方法であって、剥離する固体部分(12)は、前記固体部分(12)だけ厚みが減少した固体よりも薄く、少なくとも以下の工程を含み:
加工する固体(1)を用意する、前記固体(1)は、好ましくは化合物からなる;
レーザー光源を用意する;
レーザー光源からのレーザー光線により前記固体(1)を照射する、レーザー光線は、分離される固体部分(12)の表面(5)を通って固体(1)内に入射し、前記レーザー光線は、前記固体(1)の内部の、前記固体(1)の予め設定された部分を、剥離領域(2)又は複数の部分剥離領域(25、27、28、29)を形成するために、限定的に照射する;
レーザー照射によって、固体(1)の結晶格子に複数の改質(9)が逐次的に起こり、結晶格子は改質(9)の結果、改質(9)を囲む領域で少なくともそれぞれ1つの部分において、そこから亀裂ができ、その亀裂により改質(9)の領域に剥離領域(2)又は複数の部分剥離領域(25、27、28、29)が定められることを特徴とする、方法。
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014017582.0 | 2014-11-27 | ||
DE102014017582 | 2014-11-27 | ||
DE102014017583 | 2014-11-27 | ||
DE102014017583.9 | 2014-11-27 | ||
DE102014018841.8A DE102014018841A1 (de) | 2014-11-27 | 2014-12-17 | Laserbasiertes Trennverfahren |
DE102014018720.9A DE102014018720A1 (de) | 2014-11-27 | 2014-12-17 | Festkörpertrennverfahren mit laserbasierter Vorschädigung |
DE102014018720.9 | 2014-12-17 | ||
DE102014018841.8 | 2014-12-17 | ||
DE102015000449.2 | 2015-01-15 | ||
DE102015000449.2A DE102015000449A1 (de) | 2015-01-15 | 2015-01-15 | Festkörperteilung mittels Stoffumwandlung |
Related Parent Applications (1)
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Publications (3)
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JP2018152582A true JP2018152582A (ja) | 2018-09-27 |
JP2018152582A5 JP2018152582A5 (ja) | 2018-11-22 |
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JP2016570350A Active JP6396505B2 (ja) | 2014-11-27 | 2015-11-27 | 物質変化による固体分離 |
JP2018090077A Active JP6748144B2 (ja) | 2014-11-27 | 2018-05-08 | 物質変化による固体分離 |
Family Applications Before (1)
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US (3) | US11407066B2 (ja) |
EP (5) | EP3666445B1 (ja) |
JP (2) | JP6396505B2 (ja) |
KR (5) | KR101864558B1 (ja) |
CN (3) | CN108838562B (ja) |
MY (1) | MY174094A (ja) |
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Also Published As
Publication number | Publication date |
---|---|
KR20220058670A (ko) | 2022-05-09 |
EP3399542B1 (de) | 2023-04-12 |
JP6396505B2 (ja) | 2018-09-26 |
KR20200006641A (ko) | 2020-01-20 |
EP4122633A1 (de) | 2023-01-25 |
US11407066B2 (en) | 2022-08-09 |
EP3666445B1 (de) | 2022-10-19 |
KR20170086644A (ko) | 2017-07-26 |
WO2016083610A2 (de) | 2016-06-02 |
US11833617B2 (en) | 2023-12-05 |
JP2017526161A (ja) | 2017-09-07 |
EP3666445A1 (de) | 2020-06-17 |
EP3399542A1 (de) | 2018-11-07 |
EP3395489B1 (de) | 2024-06-19 |
KR20180059569A (ko) | 2018-06-04 |
CN108857049A (zh) | 2018-11-23 |
CN108838562B (zh) | 2021-08-17 |
CN108838562A (zh) | 2018-11-20 |
SG11201704275UA (en) | 2017-06-29 |
EP3223993A2 (de) | 2017-10-04 |
JP6748144B2 (ja) | 2020-08-26 |
US20240058899A1 (en) | 2024-02-22 |
US20180290232A1 (en) | 2018-10-11 |
EP3395489A1 (de) | 2018-10-31 |
KR102587022B1 (ko) | 2023-10-10 |
MY174094A (en) | 2020-03-09 |
WO2016083610A3 (de) | 2016-09-22 |
US20180126484A1 (en) | 2018-05-10 |
KR20230145246A (ko) | 2023-10-17 |
KR101864558B1 (ko) | 2018-06-04 |
CN107107260B (zh) | 2022-02-11 |
CN107107260A (zh) | 2017-08-29 |
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